Устройство для измерения плотности потока нейтронов ядерной энергетической установки в условиях фоновой помехи от гамма-квантов и высокоэнергетичных космических электронов и протонов

FIELD: physics. SUBSTANCE: device for measuring the neutron flow density of the nuclear power plant in terms of background interference from gamma rays and high-energy space electrons and protons, contains a neutron moderator, a power supply unit and two parallel semiconductor detectors coated with the neutron converter on the sensitive area of each detector, wherein the sensitive areas of the detectors coated with the converters are turned towards each other, wherein the plate of organic material is located between the detectors, and the signals from the detectors, passing through the registering channels individual for each detector, consisting of a charge-sensitive preamplifier, of the signal selection device according to the amplitude and the timestamp shaper, are fed to the time selection device working according to the anticoincidence scheme. EFFECT: measuring the neutron flow density in terms of background interference from gamma rays and high-energy space electrons and protons. 2 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 615 709 C1 (51) МПК G01T 3/08 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ 2016100750, 11.01.2016 (24) Дата начала отсчета срока действия патента: 11.01.2016 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 11.01.2016 (45) Опубликовано: 07.04.2017 Бюл. № 10 2 6 1 5 7 0 9 R U Руководство по эксплуатации, ООО "СНИИП-Плюс", 2012. US 5002720 A1, 26.03.1991. SU 897018 A1, 30.09.1992. RU 2102775 C1, 20.01.1998. (54) Устройство для измерения плотности потока нейтронов ядерной энергетической установки в условиях фоновой помехи от гамма-квантов и высокоэнергетичных космических электронов и протонов (57) Формула изобретения Устройство для измерения плотности потока нейтронов ядерной энергетической установки в условиях фоновой помехи от гамма-квантов и высокоэнергетичных космических электронов и протонов, содержащее замедлитель нейтронов, блок питания ...

Способ определения радиационного ресурса приборов

Настоящее техническое решение относится к определению радиационного ресурса приборов. Технический результат заключается в определении радиационного ресурса приборов при функционировании в полях ионизирующих излучений, для предотвращения неконтролируемых отказов и обеспечения безотказной эксплуатации в полях ионизирующих излучений. Технический результат достигается за счёт того, что сначала определяют плотность прямого тока p-i-n-диода от напряжения до радиационных воздействий, затем регистрируют плотность прямого тока p-i-n-диода с увеличением уровня ионизирующих излучений, фиксируют уровень ионизирующих излучений, при котором прямое напряжение, соответствующее плотности прямого тока p-i-n-диода j0пр, определяемой выражением (2⋅m⋅k⋅T⋅M⋅τ⋅Kτ⋅σ2)/(q⋅Wб⋅(dσ/dФ)), перестает уменьшаться и фиксируется его рост, и выбирают это значение критерием уменьшения ресурса приборов, требующим их замены для обеспечения безотказной работы оборудования. 1 ил.

Method and apparatus for neutron detection

Improvements in or relating to semi-conductor devices having variable electric characteristics

... 770,066. Semi-conductor devices. SIEMENSSCHUCKERTWERKE AKT.-GES. Oct. 20, 1954 [Oct. 20, 1953; April 24, 1954], No. 30283/54. Addition to 750,134. Drawings to Specification. Class 37. [Also in Group XL (b)] A semi-conductor device according to the parent Specification has a surface of the semiconductor subjected to radiation which provides a third means for controlling the currentvoltage characteristic of the device. The device, as described in the prior Specification, comprises an intrinsic semi-conductor body subjected to electric and magnetic fields at right angles to each other, thereby modifying the resistance of the semi-conductor body due to the production of a depleted region (the "magnetic barrier layer") having fewer electrons and holes than exist under thermal equilibrium conditions. The depleted region may be 10 cms. in thickness. In the present invention, radiation is applied to the depleted side of the body to generate electron-hole pairs therein which reduces the extent and ...

PIN diode

Radiation detector

PIN DIODE

PROCEDURE FOR THE DETERMINATION OF NEUTRON SPECTRA, AND DEVICE FOR THE EXECUTION OF THE PROCEDURE

RADIATION DETECTOR INCLUDING FIELD EFFECT TRANSISTOR IN RESONANT CAVITY NANOSTRUCTURE

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

Verfahren zur Steuerung des Widerstandes einer Halbleiteranordnung, bei der der Halbleiterkörper eine magnetische Sperrschicht aufweist

Halbleitergerät zur Erfassung von Neutronen

Procédé de détection des flux de neutrons

Halbleitergerät zur Erfassung von Neutronen

Procédé pour la mesure d'un flux de neutrons et appareil de mesure pour la mise en oeuvre de ce procédé

Halbleiterdiode

Dosimètre à semi-conducteur

Détecteur de neutrons

Neutron recorder detector cell - insensitive to background gamma radi

Detector system has a plate of material which, gives off ionizing radiations under neutron bombardment which fall in turn on a crystalline diamond plate with a barrier layer to charge carriers on its front face and a charge carrier injection electrode on its rear face. The barrier layer is an electrode and is connected to an amplier-recorder whilst a current source is connected via a resistor to the charge carrier injector. The thickness of the diamond plate is no greater than the maximum drift of charge carriers, during their life time, under the influence of that electric field which produces maximum drift velocity.

Neutron detector

PROCEDES ET DISPOSITIFS DE DETECTION DE NEUTRONS

L'invention est relative aux procédés et dispositifs de détection de neutrons. On met en oeuvre pour détecter les neutrons le phénomène de transition de grains ou des films homogènes d'un matériau supraconducteur vers l'état normal, sous l'effect d'un photon ou d'une particule chargée émise quand le neutron est absorbé par un matériau spécial. L'objet de l'invention est de fournir des capteurs surfaciques du genre précité permettant d'analyser la répartition d'un rayonnement neutronique avec une excellente définition Il est possible de fournir des dispositifs du genre précité qui constituent de par leur conception, des mémoires vives de répartition de rayonnement, c'est-a-dire qui affichent les dites données après la durée nécessaire par l'opérateur et que l'on puisse réarmer, c'est à dire remettre en condition de mesure, quasi-instantanément ...

Detection of neutrons - using superconducting-normal state transition by radiation emitted when neutron is absorbed, giving good spatial resolution

Dosemeter of particles

Dosimètre comprenant une diode (1) comme élément sensible aux rayonnements et un circuit électrique de mesure divisé en deux branches (9) munies de filtres fréquentiels (10) différents, dont l'une mesure la contribution des protons et des neutrons et l'autre celle des électrons et des photons, particules qui délivrent des impulsions de forme différente en atteignant la diode. La dose effectivement reçue peut être déterminée avec une bonne précision. Application aux dosimètres portatifs.

THERMAL NEUTRON DETECTOR AND HIGH SPATIAL RESOLUTION IN SUBTHERMAL 2 DIMENSIONS BASED ON THE CCD AND CMOS ELECTRONIC SENSORS AND A CONVERTER CONTAINING GADOLINIUM

Un detector de neutrones térmicos y subtérmicos con alta resolución espacial en dos dimensiones, basado en un sensor electrónico de formación de imágenes (por ejemplo un dispositivo CCD o CMOS). El detector posee un pequeño tamaño, bajo consumo, es portable y de muy bajo costo. El detector no utiliza el isótopo ³He, poco disponible y costoso, por lo que puede ser fabricado en grandes cantidades. Puede ser utilizado en defensa, seguridad y en puestos de control de fronteras y de tránsito detectando la presencia de materiales fisibles o fisionables, como el plutonio o el uranio, en dosimetría en tratamientos de radioterapia basados en el uso de neutrones, y en diversas técnicas que emplean haces de neutrones para numerosos estudios básicos y aplicados, entre otras aplicaciones. También tiene aplicación en medio ambiente, controlando contaminación con materiales que emiten neutrones térmicos, inspección de materiales por neutrografía (toma de imágenes usando neutrones) y en general en física ...

High-efficiency neutron detectors and methods of making same

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as10B or6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Neutron detector employing doped pyrolytic boron nitride and method of making thereof

The invention relates to a system for measuring a thermal neutron emission from a neutron source. The system employs a detector utilizing pBN neutron detector, wherein the pBN is doped with at least one dopant for an electrical resistivity of 1014 ohm-cm or less.

Neutron porosity measurement devices with semiconductor neutron detection cells and methods

A neutron porosity measurement device adapted to receive a neutron source configured to emit neutrons having a first energy includes a segmented semiconductor detector located at a predetermined distance from the neutron source. The segmented semiconductor detector includes a plurality of semiconductor neutron detection cells configured to detect neutrons having a second energy smaller than the first energy. The cells are arranged in subsets located between a first distance and a second distance from the neutron source, each subset including semiconductor neutron detection cells surrounding an axis and being disposed in opposite sectors defined relative to the axis at substantially same distance from the neutron source. One or more of the neutron detection cells are configured to acquire data related to detected neutrons independently from one or more other of the neutron detected cells. A method of manufacturing the neutron porosity measurement device is also provided.

Solid-state neutron detector

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

Мulti-stаgе sуstеm fоr vеrifiсаtiоn оf соntаinеr соntеnts

А multi-stаgе prосеss utilizing оnе оr mоrе rаdiаtiоn sеnsоrs оn а distributеd nеtwоrk fоr thе dеtесtiоn аnd idеntifiсаtiоn оf rаdiаtiоn, ехplоsivеs, аnd spесiаl mаtеriаls within а shipping соntаinеr. Тhе sеnsоrs аrе соnfigurеd аs nоdеs оn thе nеtwоrk. Тhе sуstеm соllесts rаdiаtiоn dаtа frоm оnе оr mоrе nоdеs аnd соmpаrеs thе соllесtеd dаtа tо оnе оr mоrе stоrеd spесtrаl imаgеs rеprеsеnting оnе оr mоrе isоtоpеs tо idеntifу оnе оr mоrе isоtоpеs prеsеnt. Тhе idеntifiеd оnе оr mоrе isоtоpеs prеsеnt аrе соrrеspоndеd tо pоssiblе mаtеriаls оr gооds thаt thеу rеprеsеnt. Тhе pоssiblе mаtеriаls оr gооds аrе соmpаrеd with thе mаnifеst rеlаting tо thе соntаinеr tо соnfirm thе idеntitу оf mаtеriаls оr gооds соntаinеd in thе соntаinеr оr tо dеtесt аnd/оr idеntifу unаuthоrizеd mаtеriаls оr gооds in thе соntаinеr. Fоr shiеldеd mаtеriаls, ехplоsivеs аnd оthеr tуpеs оf mаtеriаl dеtесtiоn, а nеutrоn pulsе dеviсе соuld bе inсоrpоrаtеd intо thе sуstеm.

Wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry

Radiation detector

A radiation detector comprising a semiconductor device formed of one or more organic semiconductor materials having dispersed neutron sensitiser element therein, such as Boron, Lithium, Gadolinium or Cadmium. The detector device may be a diode or transistor (e.g. Field Effect Transistor). The organic semiconductor materials may comprise a donor organic semiconductor material and an acceptor organic semiconductor material or a combination of organic and inorganic donor-acceptor materials. Dispersion of particles such as microparticles or Nanoparticles, or thin layers is described.

Neutron detector or dosimeter

... 1,056,012. Detecting neutrons. BOEING CO. Feb. 25, 1965 [Feb. 27, 1964], No. 8242/65. Heading G6P. In a neutron detector, the property of nickel oxide, that its electrical resistivity varies in proportion to the lithium present, is used to provide an electrical output. The concentration of the lithium in the nickel oxide may be varied in accordance with two separate reactions. First, boron is added to the nickel and the reaction B10 (n, alpha) Li<7> takes place. Lithium (i.e. Li<7>) is formed within the nickel oxide mass during neutron irradiation and the resistivity of the nickel oxide changes with time as the irradiation proceeds. Secondly, lithium-6 may be added to the nickel and the reaction Li<6> (n, alpha) H<3> occurs. In this case, lithium is removed during neutron irradiation and the nickel oxide resistivity changes, as the irradiation proceeds, in the opposite sense to that of the first reaction. The detector may be incorporated in a Wheatstone bridge.

PIN DIODE

Improvements in or relating to dosimeters

... 1,115,809. Detecting neutrons. ELECTROSPACE CORPORATION. 11 May, 1966 [16 July, 1965], No. 20916/66. Heading G6P. In a dosimeter, neutron and gamma ray intensities are measured respectively by a solid state diode and a radio photoluminescent glass member. Both are mounted together in a cylindrical case and the glass member has a lead and bronze shield which serves to reduce the response peaks inherent in the glass. The bronze lowers the effect of the lead K-absorption edge, producing a flatter characteristic. The glass member is silver activated phosphate glass and a silicon diode is employed. The gamma ray measurement is effected by luminescent light emitted from the glass upon the application of ultra-violet light and the neutron flux measurement is made in an electric circuit connected to the diode output terminals.

Radiation detector

NEUTRON DETECTOR FROM DIAMOND.

DIAMOND RADIATION DETECTOR AND DETECTION PROCEDURE.

DIAMOND RADIATION DETECTOR

DETECTOR FOR IONIZING RADIATION

Container verification system for non-invasive detection of contents

SYNTHETIC DIAMOND RADIATION DETECTOR

Nuclear radiation is detected by applying electrical contacts to a synthetic diamond having a nitrogen impurity concentration of between 20 and 150 parts per million. An electrical circuit is connected to the contacts and applies a DC bias voltage across the diamond. When the diamond is subjected to nuclear radiation, a change in the current or voltage in the circuit occurs which corresponds to the radiation intensity. The nuclear radiation may be any kind of radiation. The contacts are preferably attached directly to the diamond and are ohmic in nature.

RADIATION DETECTOR ASSEMBLY, RADIATION DETECTOR, AND METHOD FOR RADIATION DETECTION

An assembly for detecting radiation is described. The assembly includes a host matrix with particles suspended within the host matrix. The particles are capable of generating a charge carrier upon interaction with the radiation. A first electrode is disposed adjacent to a first surface of the host matrix, and a second electrode disposed adjacent to a second surface of the host matrix. A power source operatively connects to one of the first or second electrodes. The power source establishes an electric field between the first and second electrodes such that a ratio of a mobility-lifetime-field strength product of the charge carrier to the thickness of the host matrix is greater than or equal to 0.1. A radiation detector and a method for detecting radiation are also described.

NEUTRON POROSITY MEASUREMENT DEVICES WITH SEMICONDUCTOR NEUTRON DETECTION CELLS AND METHODS

A neutron porosity measurement device includes a neutron source configured to emit neutrons having a first energy and a segmented semiconductor detector located at a predetermined distance from the neutron source. The segmented semiconductor detector includes a plurality of semiconductor neutron detection cells configured to detect neutrons having a second energy smaller than the first energy. The cells are arranged in coplanar subsets between a first distance and a second distance from the neutron source. One or more of the neutron detection cells are configured to acquire data related to detected neutrons independently from one or more other of the neutron detected cells. A method of manufacturing the neutron porosity measurement device is also provided.

NEUTRON POROSITY MEASUREMENT DEVICES WITH SEMICONDUCTOR NEUTRON DETECTION CELLS AND METHODS

A neutron porosity measurement device includes a neutron source configured to emit neutrons having a first energy and a segmented semiconductor detector located at a predetermined distance from the neutron source. The segmented semiconductor detector includes a plurality of semiconductor neutron detection cells configured to detect neutrons having a second energy smaller than the first energy. The cells are arranged in coplanar subsets between a first distance and a second distance from the neutron source. One or more of the neutron detection cells are configured to acquire data related to detected neutrons independently from one or more other of the neutron detected cells. A method of manufacturing the neutron porosity measurement device is also provided.

WIRELESS, MOTION AND POSITION-SENSING, INTEGRATING RADIATION SENSOR FOR OCCUPATIONAL AND ENVIRONMENTAL DOSIMETRY

Described is a radiation dosimeter including multiple sensor devices (including one or more passive integrating electronic radiation sensor, a MEMS accelerometers, a wireless transmitters and, optionally, a GPS, a thermistor, or other chemical, biological or EMF sensors) and a computer program for the simultaneous detection and wireless transmission of ionizing radiation, motion and global position for use in occupational and environmental dosimetry. The described dosimeter utilizes new processes and algorithms to create a self- contained, passive, integrating dosimeter. Furthermore, disclosed embodiments provide the use of MEMS and nanotechnology manufacturing techniques to encapsulate individual ionizing radiation sensor elements within a radiation attenuating material that provides a "filtration bubble" around the sensor element, the use of multiple attenuating materials (filters) around multiple sensor elements, and the use of a software algorithm to discriminate between different types ...

PARTICULE DOSE RATE METER

TO THE DISCLOSURE Dose rate meter including a diode (1) as an element sensitive to radiations, and an electric measuring circuit divided into two branches (9) provided with different frequential filters (10), one filter measuring the contribution of the protons and neutrons and the other the contribution of electrons and photons, that is particles which deliver pulses of duifferent shape when reaching the diode. The dose effectively received may be accurately determined. Application for portable dose rate meters. Figure 2.

SEMICONDUCTOR NEUTRON DETECTOR

INDIVIDUAL MEANS FOR MEASURING NEUTRON DOSE EQUIVALENT OF

DOSIMETRE DE NEUTRONS RAPIDES A HAUTE SENSIBILITE A DIODE PIN AU SILICIUM

Ce procédé concerne le réglage et l'amélioration de la sensibilité de diodes PIN au silicium à l'égard des lésions par neutrons rapides. Le procédé consiste à choisir une masse à base de silicium de matière de type n ou p à haute résistivité, ayant une durée relativement longue de vie des porteurs minoritaires, dépassant 250 microsecondes us, à y former des jonctions de type n** + et p** + et à disposer la masse de manière à obtenir un dosimètres à diode PIN au silicium présentant un rapport préalablement choisi de l'aire bordante au volume. Un dosimètre pour personnel à diode PIN au silicium, sensible à un niveau de rayonnement correspondant à une dose absorbée aussi faible que 0,1 rads, a une sensibilité d'au moins 10 mV/rad dans la plage comprise entre 0,1 rads et 10 rads environ.

Neutron detector

Neutron detector.. M6C. Comprises radiator converting neutrons into ionising radiation; at least one detector of nuclear rays, with amplifier and recorder; and a supply for the detector. Detector is a diamond crystal plate with electric field-applying contacts on opposite faces and having a working zone between the contacts not exceeding the path of charge carriers in the crystal under the applied field; the contact on the side exposed to ionising radiation is one which blocks charge carriers, and it is connected to the amplifier input; the contact on the opposite side is of a material which co-acts with diamond to inject charge carriers under the influence of the applied electric field, and it is connected via a resistance to a supply. Advantage: detector has low background due to nuclear reactions, is little sensitive to gamma rays, and can detect neutrons at normal and high temps. with high sensitivty.

중성자 검출기의 제조 방법 및 중성자 검출기

... 본 발명은 사전결정된 범위 내의 특성을 갖는 중성자 플럭스(neutron flux)를 검출하기 위한 검출 디바이스를 제조하는 방법에 관한 것으로, 적어도, 파라미터들을 결정하는 단계를 포함하고, 상기 파라미터들을 결정하는 단계는: - 적어도, 제 1 전극(601); 제1 층(100)과 제2 층(400)을 포함하는 기판; 제 2 전극(602);을 연속적으로 차례로 포함하는 모델링된 스택(modeled stack)을 통해 상기 사전결정된 범위 내의 특성을 갖는 입사 중성자의 플럭스의 침투를 시뮬레이션하는 단계, - 상기 제 2 도펀트 종의 원자들과 상기 입사 중성자의 플럭스의 중성자들 간의 충돌에 의해 발생된 입자들의 이온화 및/또는 갭(gap)에 의해 상기 제 1 도핑 층(100) 내에서 생성된 디펙트들(defects)의 적어도 하나의 피크(801, 802)를 시뮬레이션하는 단계; - 상기 모델링된 스택의 상기 제 1 도핑 층(100)과 제 2 도핑 층(400) 간의 계면에 가장 가까운 디펙트의 피크(801)의 깊이를 식별하는 단계;를 포함하는 것을 특징으로 한다.

Perfectionnements aux procédés de détection des flux de neutrons.

MICROCHANNEL PLATE DEVICES WITH TUNABLE RESISTIVE FILMS

A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

USING LARGE FIELD-OF-VIEW DATA TO IMPROVE SMALL FIELD-OF-VIEW IMAGING

A large field of view projection image is obtained and a small field of view projection image is obtained. The two images are normalized, to take into account the difference between the count data between the images, and the way the images represent data. The large field of view image does not include truncation errors that are present in the small field of view image and therefore is stitched together with the smaller field of view image to use the improved data within the small field of view image with the truncation reduction enabled by the larger field of view image.

Radiation detector system and method

A radiation detector system/method implementing a corrected energy response detector is disclosed. The system incorporates charged (typically tungsten impregnated) injection molded plastic that may be formed into arbitrary detector configurations to affect radiation detection and dose rate functionality at a drastically reduced cost compared to the prior art, while simultaneously permitting the radiation detectors to compensate for radiation intensity and provide accurate radiation dose rate measurements. Various preferred system embodiments include configurations in which the energy response of the detector is nominally isotropic, allowing the detector to be utilized within a wide range of application orientations. The method incorporates utilization of a radiation detector so configured to compensate for radiation counts and generate accurate radiation dosing rate measurements.

ЦИФРОВОЙ РЕАКТИМЕТР

Изобретение относится к области реакторных измерений, в частности к устройствам для измерения реактивности ядерного реактора. Реактиметр включает канал измерения реактивности по сигналам датчика плотности потока нейтронов, при этом канал измерения включает счетный канал, выполненный из последовательно соединенных спектрометрического усилителя, дискриминатора, преобразователя счет-код, и токовый канал, в который входит усилитель сигнала и преобразователь сигнала в код. При этом преобразователи счетного и токового каналов соединены с общей магистралью, с которой также соединено устройство обработки, управления и индикации. Счетный и токовый каналы соединены с датчиками плотности потока нейтронов, работающими независимо друг от друга, счетный - со счетчиками нейтронов, а токовый - с токовой камерой деления. Технический результат – повышение точности измерения реактивности ядерного реактора путем уменьшения погрешности измерений, увеличение быстродействия и помехозащищенности, а также расширение ...

RICHTKOPPLER-DETEKTOR FÜR THERMISCHE NEUTRONEN

Neutronendetektor aus Diamant.

Improvements in neutron flux detectors

... 1,023,117. Detecting neutrons. ATOMIC ENERGY OF CANADA. June 19, 1964 [July 29, 1963], No. 25504/64. Heading G6P. A neutron flux measuring device is formed of an electron emitter electrode and a collector electrode separated by a solid insulator. The emitter generates an electron current when subjected to a neutron flux and a potential difference is developed across a load resistor, connected between the two electrodes, proportional to the emitter current. A coaxial cable connects the electrodes to an indicating instrument and in order to reduce the effect of " background " signals, due to the incidence of radiations upon the cable, a second similar cable is mounted adjacent to the first. The " background " signals generated in the two cables are applied in opposition to the indicator. The emitter material may be aluminium, vanadium, silver, cadmium or gadolinium.

PIN DIODE

A SEMICONDUCTOR DETECTOR FOR THERMAL NEUTRONS BASED ON PYROLYTI BORON NITRIDE

VERFAHREN UND VORRICHTUNG ZUM ERFASSEN VON ELEMENTARTEILCHEN

Provision is made in a method and a device for detecting elementary particles such as for example protons, ions, electrons, neutrons, photons or the like in a detector (1), wherein a charge pulse is generated in the detector (1) when a particle passes through the detector (1) and every charge pulse is subsequently converted into an electric signal (3) and the signal is indicated and/or recorded in particular after amplification, for individual signals to be amplified in a first, fast amplifier (10) and/or in each case a plurality of signals to be integrated in a second, slow amplifier (12), as a result of which it becomes possible for individual particles to be detected and in particular at increased signal or count rates for an integration thereof to be provided.

Neutron detector

High-efficiency neutron detectors and methods of making same

NEUTRON DETECTOR AND NEUTRON IMAGING SENSOR

A neutron detector includes a plurality of neutron detecting element sections, each the neutron detecting element sections having; a superconducting element including a substrate having at least one of the surfaces thereof formed of a dielectric material, a strip line of the superconducting material formed on the surface and electrodes formed at opposed ends of the strip line, resistance determining sections for determining generation of heat resulting from a nuclear reaction between a superconducting element in the strip line and neutrons, through detection of change in a resistance value of said strip line, heat dissipation setting sections provided on a back side portion of the substrate opposite to the surface having the strip line formed thereon, the heat dissipation setting sections setting dissipation characteristics of the heat resulting from the nuclear reaction, and the heat dissipation characteristics being differentiated from each other between/among the neutron detecting element ...

IONIZING RADIATION DETECTOR

An ionizing radiation detector comprises a flat substrate (30) having a plurality of etched parallel ridges (40) on one surface. The parallel sides of the ridges carry a thin layer of a conducting material, acting as an electrode (50, 60) A particle or radiation beam (70) to be detected impinges on the ridges (40) in a direction normal to the plane of the substrate, so causing electron/hole carriers production within the ridges (40). The carriers migrate to the electrodes (50, 60) in a direction perpendicular to the beam (70) thereby inducing charge on the electrodes. The readout can be extremely rapid, since the carriers need to migrate only a very small distance to the side of the ridge.

ENERGY DISCRIMINATING RESONANT, NEUTRON DETECTOR

... 2109311 9221043 PCTABS00017 A neutron detector (10) includes a body of neutron-responsive material (12) which is operative to produce a detectable signal in response to interaction thereof with a neutron flux and a constituent or added sensitizer (14) which enhances the detector's (10) response to neutrons, of a preselected energy. Also, disclosed are analytical techniques employing the detector (10), including a double resonance technique.

For neutron detection method and apparatus

A radiation detection apparatus and method

According to one embodiment an apparatus is disclosed. The computer apparatus includes a first integrated circuit (IC) and a second IC. The second IC includes a soft error rate (SER) immune component and a SER component to detect radiation that could result in soft errors at logic at the first IC.

SYSTEM FOR DETECTING NEUTRONS AND A DETECTION METHOD THEREOF

DETECTEUR ET PROCEDE POUR LA DETECTION DE NEUTRONS THERMIQUES

LE DETECTEUR DE NEUTRONS THERMIQUES A SEMI-CONDUCTEUR COMPREND AU MOINS UNE COUCHE 10 COMPORTANT UNE CONCENTRATION ELEVEE D'ATOMES DOPANTS DU TYPE P POUR REAGIR AVEC DES NEUTRONS THERMIQUES 30 ET PRODUIRE DES FRAGMENTS NUCLEAIRES, ET DES MOYENS DE DETECTION DE FRAGMENTS NUCLEAIRES 7, 8, 20 ASSOCIES A LADITE COUCHE.

SYSTEM FOR DETECTING NEUTRONS AND A DETECTION METHOD THEREOF

L'invention concerne un système de détection de neutrons comportant un détecteur principal, un détecteur auxiliaire et une chaîne de traitement. Le détecteur principal et le détecteur auxiliaire comportent chacun un volume sensible. Le détecteur principal est propre à délivrer un premier signal de détection représentatif d'une interaction de son volume sensible avec des photons et/ou des électrons, et le détecteur auxiliaire est propre à délivrer un deuxième signal de détection représentatif d'une interaction de son volume sensible avec des photons et/ou des électrons. Le détecteur principal comprend un écran de conversion principal réalisé dans un premier matériau, et le détecteur auxiliaire comprend un écran de conversion auxiliaire réalisé dans un deuxième matériau. La chaîne de traitement est configurée pour générer une information de comptage de neutrons en fonction du résultat de la différence entre une transformée du premier signal de détection et une transformée du deuxième signal ...

SYSTEME DE MESURE DE FLUX DE PHOTONS GAMMA, X, DE NEUTRONS THERMIQUES ET/OU RAPIDES

L'INVENTION CONCERNE UN SYSTEME DE MESURE DE FLUX DE PHOTONS, DE NEUTRONS THERMIQUES ETOU RAPIDES. LE SYSTEME COMPREND DES MOYENS DE DETECTION 1 DU RAYONNEMENT GAMMA ETOU X, DES MOYENS DE DETECTION 2 DE RAYONNEMENT GAMME TOU X ET DE NEUTRONS THERMIQUES, DES MOYENS DE DETECTION 3 DE RAYONNEMENT GAMMA ETOU X DE NEUTRONS THERMIQUES ETOU RAPIDES, DES MOYENS DE TRAITEMENT 4, 5, 6, 7, 8, 9, 11, 12 DES SIGNAUX DELIVRES PAR LES MOYENS DE DETECTION CAPABLES D'EFFECTUER UNE COMBINAISON LINEAIRE DES SIGNAUX DETECTES, CES MOYENS DE TRAITEMENT DELIVRANT UN SIGNAL REPRESENTATIF SELECTIVEMENT DU DEBIT DE PHOTONS, DE NEUTRONS THERMIQUES OU DE NEUTRONS RAPIDES. APPLICATION DANS LE DOMAINE CIVIL OU MILITAIRE.

NEUTRON DETECTOR FOR IRRADIATION TEST USING HIGH PURITY CVD DIAMOND AND MANUFACTURING METHOD THEREOF

The present invention relates to a neutron detector for an irradiation test using high purity CVD diamond; and a manufacturing method thereof. More specifically, a high purity CVD diamond thick film is used as a device to detect neutrons including high-speed neutrons and thermal neutrons during an irradiation test inside a reactor. In addition, an electrode is formed on both sides of the CVD diamond thick film, and then an MI cable is connected to each electrode to form a sealed structure in a form of a small capsule. As such, the present invention uses high purity CVD diamond having reproductions of high signals and efficiencies of high detection. COPYRIGHT KIPO 2017 ...

SOLID-STATE NUCLEAR DETECTOR

The present invention provides an innovative solid-state neutron detector that exhibits superior neutron-sensitivities. One embodiment of the present invention includes a Gadolinium-oxide (Gd2O3)-based neutron detector that is highly sensitive to the presence of neutrons, and experiences significant changes in film conductivity, capacitance or both as a result of thermal neutron exposure thereby providing for detection of nuclear radiation.

A SOLID STATE NEUTRON DETECTOR

The detection of low energy neutrons is improved using a capture material (12) which reacts to incident particles or electromagnetic energy by emitting radiation which is more easily detected by a conventional solid state detection device (10).

METHOD AND DEVICE FOR DETECTING ELEMENTARY PARTICLES

Provision is made in a method and a device for detecting elementary particles such as for example protons, ions, electrons, neutrons, photons or the like in a detector (1), wherein a charge pulse is generated in the detector (1) when a particle passes through the detector (1) and every charge pulse is subsequently converted into an electric signal (3) and the signal is indicated and/or recorded in particular after amplification, for individual signals to be amplified in a first, fast amplifier (10) and/or in each case a plurality of signals to be integrated in a second, slow amplifier (12), as a result of which it becomes possible for individual particles to be detected and in particular at increased signal or count rates for an integration thereof to be provided.

NEUTRON DETECTOR AND NEUTRON IMAGE SENSOR

A neutron detector having a sensitivity and a time resolution adjustable by simply altering the arrangement of the device. The neutron detector comprises a superconducting element (20) having a substrate (10) where at least one surface is formed of a dielectric material (11), a strip line (2) made of a superconducting material and formed on the surface, and electrodes (1) formed at both ends of the strip line (2), and a plurality of neutron detecting element sections having a resistance measuring means for measuring heat generation through nuclear reaction of a superconducting element and a neutron in the strip line (2) based on variation in resistance of the strip line (2), and a heat dissipation adjusting means (5) provided on the back of the substrate opposite to the surface where the strip line (2) is formed and adapted for adjusting dissipation properties of heat generation through nuclear reaction. The heat dissipation properties are differentiated among the neutron detecting element ...

Neutron individual dose meter neutron dose rate meter, neutron detector and its method of manufacture

A neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response. The neutron individual dose meter is capable of being accomplished by providing a composite layer made up of a converter such as boron, and a proton radiator, on the surface of a semiconductor neutron detection element. The neutron dose rate meter is capable of being accomplished through such a structure as to surround a neutron detector with a neutron moderator and a thermal neutron absorber which has openings. Thus, a neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response and measurement at lower operating voltage have been provided. Further, these meters are capable of being implemented by utilizing a single semiconductor detection element, respectively.

Solid-state thermal neutron detector

A solid-state thermal neutron detector comprises: a layered structure that includes; an electrically insulating substrate; a first electrode affixed to the substrate; a neutron-reactive layer affixed to and in ohmic contact with the first electrode; and a second electrode affixed to and in ohmic contact with the neutron-reactive layer; a voltage source electrically coupled to the first and second electrodes; and an electrical current detector electrically coupled in series between the layered structure and the voltage source.

Microchannel plate devices with tunable resistive films

A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

PIN diode with nanoclusters

A diode for detecting the presence of radiation includes a P region, an N region, an intrinsic region located between the P region and the N region, and a layer of nanoclusters located adjacent to the intrinsic region.

Neutron detection structure and method of fabricating

A method of fabricating a neutron detection structure includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer where at least a portion of the first substrate was removed, permanently bonding a second substrate to the conversion layer, removing the carrier, and providing at least one electrical contact to the device layer. A method of fabricating a neutron detection structure, corresponding to an alternate embodiment, includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer onto a second substrate, permanently bonding the coated substrate where at least a portion of the first substrate was removed, removing the carrier, and providing at least one electrical contact to the device layer.

Method to planarize three-dimensional structures to enable conformal electrodes

Methods for fabricating three-dimensional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer.

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

Мulti-stаgе sуstеm fоr vеrifiсаtiоn оf соntаinеr соntеnts

А multi-stаgе prосеss utilizing оnе оr mоrе rаdiаtiоn sеnsоrs оn а distributеd nеtwоrk fоr thе dеtесtiоn аnd idеntifiсаtiоn оf rаdiаtiоn, ехplоsivеs, аnd spесiаl mаtеriаls within а shipping соntаinеr. Тhе sеnsоrs аrе соnfigurеd аs nоdеs оn thе nеtwоrk. Тhе sуstеm соllесts rаdiаtiоn dаtа frоm оnе оr mоrе nоdеs аnd соmpаrеs thе соllесtеd dаtа tо оnе оr mоrе stоrеd spесtrаl imаgеs rеprеsеnting оnе оr mоrе isоtоpеs tо idеntifу оnе оr mоrе isоtоpеs prеsеnt. Тhе idеntifiеd оnе оr mоrе isоtоpеs prеsеnt аrе соrrеspоndеd tо pоssiblе mаtеriаls оr gооds thаt thеу rеprеsеnt. Тhе pоssiblе mаtеriаls оr gооds аrе соmpаrеd with thе mаnifеst rеlаting tо thе соntаinеr tо соnfirm thе idеntitу оf mаtеriаls оr gооds соntаinеd in thе соntаinеr оr tо dеtесt аnd/оr idеntifу unаuthоrizеd mаtеriаls оr gооds in thе соntаinеr. Fоr shiеldеd mаtеriаls, ехplоsivеs аnd оthеr tуpеs оf mаtеriаl dеtесtiоn, а nеutrоn pulsе dеviсе соuld bе inсоrpоrаtеd intо thе sуstеm.

Мulti-stаgе sуstеm fоr vеrifiсаtiоn оf соntаinеr соntеnts

А multi-stаgе prосеss utilizing оnе оr mоrе rаdiаtiоn sеnsоrs оn а distributеd nеtwоrk fоr thе dеtесtiоn аnd idеntifiсаtiоn оf rаdiаtiоn, ехplоsivеs, аnd spесiаl mаtеriаls within а shipping соntаinеr. Тhе sеnsоrs аrе соnfigurеd аs nоdеs оn thе nеtwоrk. Тhе sуstеm соllесts rаdiаtiоn dаtа frоm оnе оr mоrе nоdеs аnd соmpаrеs thе соllесtеd dаtа tо оnе оr mоrе stоrеd spесtrаl imаgеs rеprеsеnting оnе оr mоrе isоtоpеs tо idеntifу оnе оr mоrе isоtоpеs prеsеnt. Тhе idеntifiеd оnе оr mоrе isоtоpеs prеsеnt аrе соrrеspоndеd tо pоssiblе mаtеriаls оr gооds thаt thеу rеprеsеnt. Тhе pоssiblе mаtеriаls оr gооds аrе соmpаrеd with thе mаnifеst rеlаting tо thе соntаinеr tо соnfirm thе idеntitу оf mаtеriаls оr gооds соntаinеd in thе соntаinеr оr tо dеtесt аnd/оr idеntifу unаuthоrizеd mаtеriаls оr gооds in thе соntаinеr. Fоr shiеldеd mаtеriаls, ехplоsivеs аnd оthеr tуpеs оf mаtеriаl dеtесtiоn, а nеutrоn pulsе dеviсе соuld bе inсоrpоrаtеd intо thе sуstеm.

NEUTRON DETECTOR

A semiconductor detector for thermal neutrons based on pyrolytic boron nitride

A pBN neutron detector and method of forming a pBN neutron detector with the neutron detector formed by depositing multiple layers of pBN having a crystalline lattice structure with its crystallographic 'c plane' predominantly parallel to the deposited layers. The neutron detector forms a geometry having two opposite sides aligned parallel to the 'ab planes' of the structure and has a thickness of between one micron and one mm between the opposite sides. Metallized contacts are applied to the opposite sides and the detector is oriented relative to a source of neutrons such that the neutrons pass through the volume of the detector and cause electrons to flow in response to alpha particles generated from the interaction of neutrons with the Boron-10 isotope present in pBN.

ДЕТЕКТОР ИЗЛУЧЕНИЯ, ВЫПОЛНЕННЫЙ ИЗ АЛМАЗА

Использование: для детектирования ионизирующего излучения. Сущность: детектор излучения содержит в себе дополнительный слой алмаза, созданный на поверхности подложки из алмаза, легированного бором. Способ регистрации или измерения излучения, в котором используется детектор, представляющий собой дополнительный слой алмаза, созданный на поверхности подложки из алмаза, легированного бором. Причем поверхность дополнительного слоя, нанесенного поверх подложки, подвергают воздействию излучения. Технический результат - увеличение амплитуды сигнала при заданной интенсивности излучения, повышение надежности. 2 н. и 12 з.п. ф-лы, 1 ил.

Neutron detector

The neutron detector consists of a support layer of diamond 12, which typically may be in the range 200-1000 žm thick, onto which is grown a CVD diamond layer 14 doped with <10>B, and possibly other dopants including <11>B and other elements, typically 5-15 žm thick. A further layer 16 of undoped CVD diamond, of a quality suitable for the detection of alpha particles ('detector grade' diamond) and typically 20-50 žm thick, is grown on the doped layer 14. The structure is completed by a contact layer 18 or layers over the undoped CVD diamond layer 16. An optional second layer of doped CVD diamond may be grown onto the detector grade diamond overlayer 16. The diamond of the support layer 12 may be of standard quality and synthesised at high rate. It provides mechanical robustness and protection to the final structure, and improves the selectivity of the device to neutrons by absorbing other particles with a high capture cross-section in diamond.

Improvements in or relating to methods of testing neutron radiation

... 862,425. Neutron radiation measurement. SIEMENS SCHUCKERTWERKE A. G. March 7, 1957 [March 9, 1956], No. 7620/57. Class 40(3) [Also in Group XXXVI] In a manufacturing process, neutron radiation is tested by measuring and indicating and evaluating by means of a graph, the changes in an electrical property of a semiconductor body which is subjected to the radiation, the body having at least one component which becomes radio active under neutron bombardment and has a cross-section of at least 1 barn. Indium phosphide or indium nitride are preferred semiconductor materials and the body may be thin with a large area PN junction. Fig. 2 shows an arrangement suitable for detecting an extremely weak neutron flux which is arranged to bombard the semiconductor body 3. The resulting electron-hole pairs produce voltage impulses due to battery 2 which are supplied to amplifier 6 and measuring device 7. Alternatively, the voltage across or current through the body during radiation bombardment may be measured ...

NEUTRON GENERATOR

... 1276079 Detecting neutrons S F KOZLOV and A Z MINTS 19 April 1971 [31 March 1970] 25715/71 Heading G6P A neutron detector, mounted integrally with a neutron generator, measures the charged particle emission from the generator target, which is a measure of the neutron production in the generator. The reactions employed in the generator are: The charged particles He4 or He3, derived simultaneously with the neutrons, produce electrons and holes in a diamond detector and the direct component of the current measures the integrated neutron flux of the generator. The detector 11 is mounted behind the generator target, 8, incorporating the hydrogen isotopes and is formed of a diamond crystal plate, 12, between the contacts 13, 14. In an alternative form, the contact 13 also -functions as the generator target.

SEMICONDUCTOR SUBSTRATE WITH A LAYER OF CONVERSION OF NEUTRON

SOLID NEUTRON DETECTOR

VERFAHREN UND VORRICHTUNG ZUM ERFASSEN VON ELEMENTARTEILCHEN

Provision is made in a method and a device for detecting elementary particles such as for example protons, ions, electrons, neutrons, photons or the like in a detector, wherein a charge pulse is generated in the detector when a particle passes through the detector and every charge pulse is subsequently converted into an electric signal and the signal is indicated and/or recorded in particular after amplification, for individual signals to be amplified in a first, fast amplifier and/or in each case a plurality of signals to be integrated in a second, slow amplifier, as a result of which it becomes possible for individual particles to be detected and in particular at increased signal or count rates for an integration thereof to be provided.

Microelectronic circuit radiation detector

Systems and methods for neutron detection using scintillator nano-materials

In one embodiment, a neutron detector includes a three dimensional matrix, having nanocomposite materials and a substantially transparent film material for suspending the nanocomposite materials, a detector coupled to the three dimensional matrix adapted for detecting a change in the nanocomposite materials, and an analyzer coupled to the detector adapted for analyzing the change detected by the detector. In another embodiment, a method for detecting neutrons includes receiving radiation from a source, converting neutrons in the radiation into alpha particles using converter material, converting the alpha particles into photons using quantum dot emitters, detecting the photons, and analyzing the photons to determine neutrons in the radiation.

NEUTRON DETECTION CHIP ASSEMBLY

A neutron detector and method of manufacture are provided. The neutron detector includes a sensing element structure having a substrate with a front surface and a back surface, opposite to the front surface. A semiconductor sensing element is fabricated in an active semiconductor layer on the front surface of the first substrate and is sensitive to a charged particle. A neutron conversion structure is attached to the back surface and includes neutron conversion material that emits the charged particle in response to a reaction with neutrons. 1. A neutron detector device comprising: a first substrate with a front surface and a back surface, opposite to the front surface; and', 'a semiconductor sensing element, which is sensitive to a charged particle and is fabricated in an active semiconductor layer on the front surface of the first substrate; and, 'a sensing element structure comprisinga neutron conversion structure attached to the back surface and comprising neutron conversion material that emits the charged particle in response to a reaction with neutrons.2. The neutron detector device of claim 1 , wherein:the neutron conversion structure further comprises a second substrate, distinct from the first substrate, wherein the neutron conversion material is fabricated on the second substrate; andthe neutron conversion structure is attached to the back surface of the first substrate such that the neutron conversion material is positioned between the second substrate and the first substrate.3. The neutron detector device of claim 1 , wherein the device comprises an assembly of the sensing element structure and the neutron conversion structure claim 1 , which are distinct structures that are adhered together to form the assembly.4. The neutron detector device of claim 1 , wherein the neutron conversion structure is adhered to the sensing element structure by an adhesive positioned between the neutron conversion material and the back surface of the first substrate.5. The ...

Neutron Detector

The invention relates to a neutron detector () comprising a semiconductor detector substrate () and a conductive neutron converting layer (), such as of TiB. The neutron detector () thereby comprises a conductive contact made of a neutron conversion material (). 1. A neutron detector comprising:a semiconductor detector substrate having a front side and a back side;a first electrical contact present on said front side and comprises a conductive neutron converting layer; anda second electrical contact present on said back side and comprises a conductive layer.2. The neutron detector according to claim 1 , wherein said conductive neutron converting layer is made of a conductive material comprising isotopes that are sensitive to neutrons and convert incident neutrons to detectable particle species.3. The neutron detector according to claim 1 , wherein said conductive neutron converting layer is made of a conductive boride material.4. The neutron detector according to claim 3 , wherein said conductive neutron converting layer is made of titanium diboride.5. The neutron detector according to claim 4 , wherein said conductive neutron converting layer is made of enriched titanium diboride with regard to a B isotope and boron in said enriched titanium diboride is present in at least 20% as said B isotope.6. The neutron detector according to claim 1 , wherein said conductive neutron converting layer has a thickness from about 100 nm to about 1 μm.7. The neutron detector according to claim 1 , wherein said semiconductor detector substrate comprises a three-dimensional structure in said front side.8. The neutron detector according to claim 7 , wherein said front side is serrated forming multiple sawteeth and said first electrical contact is deposited on said sawteeth.9. The neutron detector according to claim 1 , wherein said first electrical contact comprises a conductive gluing layer arranged between said conductive neutron converting layer and said semiconductor detector ...

Neutron Detection

A method for detecting a neutron includes providing a first voltage to an input electrode of a microchannel plate, providing a second voltage to an output electrode of the microchannel plate, the second voltage being more positive than the first voltage, measuring a signal on the output electrode, and detecting a neutron based on a comparison of the signal at the output electrode with a baseline value. 165-. (canceled)66. A method for detecting a neutron , the method comprising:providing a first voltage to an input electrode of a microchannel plate;providing a second voltage to an output electrode of the microchannel plate, the second voltage being more positive than the first voltage;measuring a signal on the output electrode; anddetecting a neutron based on a comparison of the signal at the output electrode with a baseline value.67. The method of in which detecting a neutron comprises determining that a neutron has been detected when the signal at the output electrode is negative for a period of time.68. The method of in which detecting a neutron comprises determining that a neutron has been detected when the amplitude of the signal at the output electrode is also above a predetermined threshold.69. The method of in which detecting a neutron comprises determining that a neutron has been detected when the signal at the output electrode is positive for a first period of time and negative for a second period of time.70. The method of claim 66 , comprising detecting an avalanche of secondary electrons reaching an anode of the microchannel plate claim 66 , wherein detecting a neutron comprises determining that a neutron has been detected when claim 66 , for a period of time after the avalanche of secondary electrons have been detected claim 66 , the signal at the output electrode becomes negative.71. The method of claim 66 , comprising integrating the signal at the output electrode over a period of time to generate an integral claim 66 , wherein detecting a neutron ...

Neutron Detection

A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium. 1. An apparatus comprising:a microchannel plate comprising a structure that defines a plurality of microchannels; andlayers of materials disposed on walls of the microchannels, the layers including a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material.2. The apparatus of in which the layer of neutron sensitive material comprises at least 50 mol % of neutron sensitive material.3. The apparatus of in which the layer of neutron sensitive material comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium.4. The apparatus of in which the layer of neutron sensitive material comprises a compound that comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium claim 1 , and the compound comprises at least one of boron-10 oxide claim 1 , boron-10 nitride claim 1 , lithium-6 oxide claim 1 , or gadolinium oxide.5. The apparatus of in which the structure comprises glass.6. The apparatus of in which the semiconducting material comprises AlZnOalloy claim 1 , x and y being positive integers.7. The apparatus of in which the electron emissive material comprises at least one of aluminum oxide (AlO) or magnesium oxide (MgO).8. The apparatus of claim 1 , comprising a gamma ray detector to detect gamma rays claim 1 , and a coincidence unit to determine whether a signal output from the gamma ray detector indicating detection of a gamma ray occurs within a predetermined time period after a signal output from the microchannel plate indicating detection of at least one of a neutron or ...

NEUTRON DETECTOR

A device for detecting neutrons includes at least one common module, where a number of solid state sensors are assembled. The sensors are configured in the module side by side and/or stacked in a layered structure. At least one of the sensors includes neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with the incident neutrons. The neutron converters are coupled with corresponding semiconductor elements so that the semiconductor elements interact with the ionizing radiation reaction products for providing electrical charges in proportion to the energy of the ionizing radiation reaction products. The semiconductor elements are configured with electrodes for providing charge collection areas for collecting the electrical charges and to provide electrically readable signals proportional to the collected electrical charges. 123-. (canceled)24. A module for a device for detecting neutrons , the module supporting solid state sensors in a stacked and/or planar and/or tubular arrangement , wherein:at least one of the sensors comprises neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with said incident neutrons, andeach of said neutron converters is coupled with corresponding semiconductor elements so that the semiconductor elements interact with said ionizing radiation reaction products for providing electrical charges in proportion to the energy of said ionizing radiation reaction products, and said semiconductor elements being configured with electrodes for providing charge collection areas for collecting said electrical charges and to provide electrically readable signals proportional to said collected electrical charges.25. The module according to claim 24 , wherein at least one of the sensors ...

Thin film transistor detection systems and related methods

Some embodiments include a system. The system includes a sensor device having a sensor element having a sensor output and an amplification element having at least one amplification stage, an amplifier input, and an amplifier output. The sensor output can be coupled to the amplifier input. Further, each amplification stage of the amplification stage(s) can have at least four thin film transistors, an input node, and an output node. Meanwhile, the sensor element can detect a physical quantity and/or an event and can provide an electric signal to the amplification element in response to detecting the physical quantity and/or the event, and the amplification element can amplify the electric signal received from the sensor element. Other embodiments of related systems and methods are also disclosed.

HIGH-EFFICIENCY MICROSTRUCTURED SEMICONDUCTOR NEUTRON DETECTORS AND PROCESS TO FABRICATE HIGH-EFFICIENCY MICROSTRUCTURED SEMICONDUCTOR NEUTRON DETECTORS

A semiconductor neutron detector and a semiconductor process is provided to manufacture a semiconductor neutron detector. First, a substrate with flat surface having a dielectric layer is formed thereon is provided. Thereafter, a masking pattern is applied and etched into the dielectric layer to expose semiconductor features on opposite sides of the substrate. The semiconductor substrate is submerged into an etchant composed of a semiconductor etching solution to etch deep cavities into the substrate in the exposed regions. Afterwards, dopant impurities are introduced and are driven into the semiconductor, under high temperature, into opposite sides of the etched features to produce one or more rectifying junctions. Afterwards, LiF and/or B particles are forced into the cavities through high velocity methods. 1. A high-efficiency neutron detector comprising:a single, particle-detecting substrate having a top face on which neutrons are incident, a bottom face opposite the top face and a plurality of cavities, each of the cavities extending from one of the faces into the substrate but not to the other of the faces, wherein the cavities extending into the substrate from the top face are not surrounded by any cavities extending into the substrate from the bottom face; andneutron-responsive material disposed in the plurality of cavities, the material being responsive to neutrons absorbed thereby for releasing ionizing radiation reaction products wherein the cavities are sized, shaped and distributed throughout the substrate so that the detector is substantially opaque to the neutrons normally incident on the top face.2. The detector as claimed in claim 1 , wherein a first array of cavities extend into the substrate from the top face and a second array of cavities extend into the substrate from the bottom face and wherein the detector is dual-sided.3. The detector as claimed in claim 1 , wherein all of the cavities extend into the substrate from the top face.4. The ...

Thin Gap Chamber Neutron Detectors

The present specification describes systems and methods for the simultaneous detection of radioactive materials such as neutrons, muons and gamma rays based on thin gap chamber technology. A thin-gap chamber (TGC) is disclosed having a thermal neutron absorber material, such as BC or BC, which interacts with neutrons to emit heavy particles. The heavy particles, in turn, interact with the gas present in chamber to produce ionization that is converted into a measurable signal. The TGC is embedded in a neutron moderating medium. The detector systems are fabricated from commercially available construction materials and are easy to manufacture at a reasonable cost when compared to conventional He-3 neutron detector systems.

RADIATION DETECTOR INCLUDING FIELD EFFECT TRANSISTOR IN RESONANT CAVITY NANOSTRUCTURE

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field. 1. A radiation detection device comprising:a plurality of field effect transistors (FETs) arranged to form a resonant cavity, the cavity including a first end and a second end, the plurality of FETs providing an electromagnetic field defining a standing wave oscillating at a resonant frequency defined by a characteristic of the cavity, a radiation input passing through the cavity inducing a perturbation of the electromagnetic field.2. The radiation detection device of claim 1 , wherein each of the FETs is a uniformly flat mesa long gate FET.3. The radiation detection device of claim 1 , wherein the resonant cavity is a first resonant cavity claim 1 , and further comprising a second plurality of FETs arranged to form a second resonant cavity claim 1 , the first resonant cavity and the second resonant cavity arranged in a periodic array claim 1 , the first resonant cavity and the second resonant cavity sharing a common wall formed by one of the FETs.4. The radiation detection device of claim 3 , wherein the first resonant cavity is configured to detect radiation originating from a first source type claim 3 , and the second resonant cavity is configured to detect radiation originating from a second source type.5. The radiation detection device of claim 1 , wherein the resonant cavity is continually adjusted to vary the resonant frequency in order to scan for radiation originating from a variety of source types.6. The radiation detection device of claim 1 , wherein the characteristic is a length of the cavity extending between the first end and the ...

Solid State Detection Devices, Methods of Making and Methods of Using

The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices. 1. A method of making a solid state device for detecting neutrons comprising:providing a bulk semiconductor substrate;electrochemically processing the substrate in an organic bath for a predetermined time period to form pores in the substrate; andfilling the pores with a fill material that reacts with neutrons.2. The method of claim 1 , further comprising:doping a surface of the pores via gaseous diffusion with a p- or n-type impurity prior to the filling step.3. The method of claim 2 , wherein the p- or n-type impurity is selected from a Group III or a Group V element.4. The method of claim 1 , wherein the filling step is performed in a liquid phase using a sol-gel technique.5. The method of claim 1 , wherein the organic bath includes about a 20% or greater HF solution.6. The method of claim 1 , wherein the predetermined time period for processing ranges from about 15 to 45 minutes.7. The method of claim 1 , wherein the substrate is selected from Silicon claim 1 , Geranium claim 1 , Gallium claim 1 , Arsenide and combinations thereof.8. The method of claim 1 , wherein the fill material is selected from trimethyl borate claim 1 , Gadolinium claim 1 , Lithium and combinations thereof.9. A solid state neutron detection device comprising:a semiconductor substrate having pores;a p- or n-type doping layer formed on a surface of the substrate pores; anda layer of fill material formed on the p- or n-type doping layer,wherein a neutron detection efficiency of the device, ...

LAYERED PIXEL DETECTOR OF IONIZING RADIATION

The layered pixel detector () of ionizing radiation includes at least two semiconductor pixel particle counting detectors. Each detector consists of a sensor () connected to a readout chip (), while the readout chip () on a part of its perimeter has a projecting section () with contact pads to connect conductors (). The detectors form at least one segment () in which the pixel detectors are arranged into layers on top of each other. The thickness of the readout chips () is up to 200 μm and the thickness of the sensors () is up to 2000 μm. The layered detector () includes at least one carrying thermal conductive platform () provided with at least one supporting structure () to support at least one projecting section () of the readout chip (). 1712283962181710582. A layered pixel detector () of ionizing radiation including at least two semi-conductor pixel particle counting detectors , each consisting of a sensor () connected to a readout chip () , while on the side of the readout chip () there is a projecting section () along a part of its perimeter with contact pads to connect conductors () , characterized in that the pixel detectors form at least one segment () , in which the pixel detectors are arranged into layers one over another with adhesive between the individual layers () , the thickness of readout chips () is up to 200 μm , the thickness of sensors () is up to 2000 μm , where the projecting parts () of adjoining layers , when viewed in perpendicular direction to the sensor area () , partly overlap or do not overlap and the layered detector () includes at least one carrying thermal conductive platform () provided with at least one supporting structure () to support at least one projecting part () of the readout chip ().2123. A layered pixel detector according to characterized in that the ground plan of the sensor () and the ground plan of the readout chip () without the projecting section () are of the square shape.31010111929. A layered pixel detector ...

DETECTION DEVICES AND METHODS

A device for detecting neutrons with gamma discrimination and/or gamma radiation includes a first semiconductor layer, a second semiconductor layer, an electron separator layer between the first semiconductor device and the second semiconductor device, and a gadolinium-containing layer between the first semiconductor layer and the second semiconductor layer. 1. A detection device comprising:a first semiconductor device;a second semiconductor device;an electron separator layer between the first semiconductor device and the second semiconductor device; anda conversion layer between the first semiconductor device and the second semiconductor device;wherein the conversion layer comprises gadolinium.2. The detection device of claim 1 , wherein the conversion layer is a coating layer deposited on the second semiconductor device.3. The detection device of claim 1 , wherein the conversion layer is a gadolinium-doped superlattice.4. The detection device of claim 1 , wherein the electron separator layer comprises polyethylene.5. The detection device of claim 1 , wherein the electron separator layer comprises a first surface and a second surface; wherein the first surface is in physical contact with the conversion layer; and wherein the second surface is in physical contact with one of the first semiconductor device and the second semiconductor device.6. The detection device of claim 1 , wherein the conversion layer has a thickness from about 20 to about 40 μm.7. The detection device of claim 1 , wherein the first semiconductor device and the second semiconductor device comprise gallium nitride.8. A method for detecting neutrons claim 1 , comprising: a first semiconductor device;', 'a second semiconductor device;', 'an electron separator layer between the first semiconductor device and the second semiconductor device; and', 'a conversion layer between the first semiconductor device and the second semiconductor device;', 'wherein the conversion layer comprises gadolinium;, ' ...

DATA PROCESSING METHOD OF PERSONAL RADIATION DOSIMETER TO RECOGNIZE ACTIVITY OF WEARER BY USING MOTION SENSOR VALUE

A method for recognizing whether a radiation worker normally wears a personal radiation dosimeter, recognizing a radiation dose and work behavior at a specific time point by integrally analyzing radiation measurement data of a personal radiation dosimeter and motion data of a radiation worker, and helping improvement of work behavior of a radiation worker and improvement of radioactive danger recognition on the basis of such data. 1. A data processing method of a personal radiation dosimeter , comprising steps of:detecting a value of a radiation sensor provided with a dosimeter;generating a movement value by a motion sensor value provided in the dosimeter;generating a shock value which is a change value of a gravity axis from the motion sensor value provided in the dosimeter;generating a measurement time in a clock sensor provided in the dosimeter;coupling data values of the sensors into one-packet data;transmitting the packet data to a control server through a communication device; andextracting a motion state of a dosimeter wearer in radiation work environment on the basis of the radiation sensor value and motion sensor value of the packet data.2. The data processing method according to claim 1 , wherein the motion sensor is a 3-axis accelerometer.3. The data processing method according to claim 1 , further comprising a step of issuing an alert when falling shock occurs in a high-level radioactive status on the basis of the shock value and the radiation sensor value.4. The data processing method according to claim 1 , further comprising a step of comparing an activity time with a stop time to determine whether a dosimeter is worn.5. The data processing method according to claim 1 , further comprising a step of determining a case where the movement value is an activity state at the time without a work history of a worker and the radiation sensor value is equal to or more than a reference value claim 1 , as use by others.6. The data processing method according to ...

RED BORON SOLID STATE DETECTOR

A solid state detector with alpha rhombohedral red boron is disclosed. The solid state detector detects neutrons, especially thermal neutrons. The detector may include a body of alpha rhombohedral red boron disposed between electrodes, a power supply for applying a voltage to said electrodes, and a detecting device that detects and measures a current pulse emitted from said body of alpha rhombohedral red boron to detect the neutrons. 1. A device for detecting neutrons , comprising:a body of alpha rhombohedral red boron disposed between electrodes;a power supply for applying a voltage to said electrodes; anda detecting device that detects and measures a current pulse emitted from said body of alpha rhombohedral red boron to detect the neutrons.2. The device for detecting neutrons as claimed in claim 1 , wherein said body of alpha rhombohedral red boron is a single crystal of alpha rhombohedral red boron.3. The device for detecting neutrons as claimed in claim 1 , wherein said body of alpha rhombohedral red boron comprises multiple crystals of alpha rhombohedral red boron.4. The device for detecting neutrons as claimed in claim 1 , wherein said body of alpha rhombohedral red boron is intrinsic red boron.5. The device for detecting neutrons as claimed in claim 1 , wherein an optimization parameter claim 1 , α claim 1 , of the body of alpha rhombohedral red boron as a neutron detector is given by the following equation:{'br': None, 'sub': h', 'h', 'e', 'e, 'i': t', 't, 'α=(μ+μ)ρ'}wherein:{'sub': 'e', 'μis a product of a mobility of electrons,'}{'sub': 'e', 'tis a lifetime of excess electrons,'}{'sub': 'h', 'μis a mobility of holes,'}{'sub': 'h', 'tis a lifetime of the excess holes, and'}ρ is an electrical resistivity of the red boron.6. The device for detecting neutrons as claimed in claim 5 ,{'sup': 3', '10', '3, 'wherein the effectiveness parameter a is greater than 1 (cm-ohm)/volt and less than 10(cm-ohm)/volt,'}{'sub': 'e', 'sup': '2', 'wherein the electron mobility ...

Electronic dosimeter for alarm generation in pulsed radiation fields

A portable electronic dosimeter is described that comprises a plurality of detectors each configured to detect a type of ionizing radiation, wherein each detector is associated with an amplifier configured to produce an output in response to a plurality of detected photons of the ionizing radiation and an event counter configured to produce one or more counts in response to the detected photons of the ionizing radiation over an integration time; and a processor configured to receive the one or more counts from each of the counters and determine if there is coincidence of the one or more counts of all the detectors, wherein if there is coincidence the processor is configured to provide an over range alarm signal.

NEUTRAL ATOM IMAGING UNIT, NEUTRAL ATOM IMAGER, NEUTRAL ATOM IMAGING METHOD, AND SPACE DETECTION SYSTEM

The present disclosure provides a neutral atom imaging unit, a neutral atom imager, a neutral atom imaging method, and a space detection system. The neutral atom imaging unit includes at least one set of detection units, the at least one set of detection units includes: at least one semiconductor detector line array, each semiconductor detector line array includes a semiconductor detector strip composed of a plurality of semiconductor detectors; and at least one modulation grid. The modulation grid includes a slit and a slat forming the slit; the modulation grid includes a plurality of grid periods, each of the grid periods includes n slits, the width of the semiconductor detector strip is d, and the width (w) of the i-th slit of the modulation grid satisfies the following relationship: 2. The neutral atom imaging unit according to claim 1 , wherein in each of the grid periods claim 1 , a width of a narrowest slit and a width of the slat forming the narrowest slit are the same as a width of the semiconductor detector strip.3. The neutral atom imaging unit according to claim 1 , wherein lengths of the plurality of grid periods of the modulation grid are the same claim 1 , the i-th slit in each grid period corresponds to an i-th slat claim 1 , and the i-th slit has the same width as the i-th slat.4. The neutral atom imaging unit according to claim 1 , wherein a thickness t of the modulation grid satisfies: t≤¼d.6. The neutral atom imaging unit according to claim 1 , wherein the modulation grid includes m grid periods claim 1 , m≥2 and n≥8.7. The neutral atom imaging unit according to claim 1 , wherein the neutral atom imaging unit further comprises a collimation-and-deflection module claim 1 , the collimation-and-deflection module is arranged in front of a modulation grid of at least one detection unit claim 1 , and the collimation-and-deflection module includes a collimator and a deflection plate.8. A neutral atom imager claim 1 , comprising at least one imaging ...

METHOD AND APPARATUS FOR NEUTRON DETECTION

Embodiments of the present invention provide a neutron spectrometry system, comprising a plurality of semiconductor detector portions arranged in close proximity, wherein the detector portions are arranged in at least two non-parallel axes, wherein each detector portion is arranged to output a detection signal indicative of energy deposited in the detector portion by ionising particles induced in the device by incident neutrons, and a control unit arranged to receive the plurality of detection signals, and to allocate detection signals to one or more of a plurality of channels based on a number of substantially coincident detection signals for determining a spectrum of incident neutrons based thereon. 1. A neutron spectrometry system , comprising:a plurality of semiconductor detector portions arranged in close proximity, wherein the detector portions are arranged in at least two non-parallel axes;wherein each detector portion is arranged to output a detection signal indicative of energy deposited in the detector portion by ionising particles induced in the device by incident neutrons; anda control unit arranged to receive the plurality of detection signals, and to allocate detection signals to one or more of a plurality of channels based on a number of substantially coincident detection signals for determining a spectrum of incident neutrons based thereon.2. The system of claim 1 , wherein each detector portion is arranged to output a detection signal responsive to an amount of energy deposited in the detector portion by the ionising particles.3. The system of claim 1 , wherein each of the detector portions comprise one or more semiconductor devices having a sensitive region claim 1 , wherein the detection signal is output in response to the ionising particles entering the sensitive region.4. The system of claim 3 , wherein the semiconductor devices comprise diodes.5. The system of claim 1 , wherein the detector portions are arranged to form an at least partial ...

CERAMIC RADIATION DETECTOR DEVICE AND METHOD

A ceramic lithium indium diselenide or like radiation detector device formed as a pressed material that exhibits scintillation properties substantially identical to a corresponding single crystal growth radiation detector device, exhibiting the intrinsic property of the chemical compound, with an acceptable decrease in light output, but at a markedly lower cost due to the time savings associated with pressing versus single crystal growth. 1. A method for forming a ceramic radiation detector material , comprising:pulverizing a source material into a powder, wherein the source material comprises a chalcopyrite;applying a mechanical pressure to the powder for a predetermined period of time;holding the powder at an elevated temperature below the melting temperature of the powder for the predetermined period of time; andannealing a resulting pressed pellet formed from the powder, wherein the pressed pellet comprises a plurality of crystals with different orientations that collectively exhibit a scintillation behavior of a single crystal of the source material.2. The method of claim 1 , wherein the powder is loaded into a die or mould to which the mechanical pressure is applied.3. The method of claim 1 , wherein the mechanical pressure is between 1500 lbs and 4500 lbs.4. The method of claim 1 , wherein the elevated temperature is between 100° C. and 400° C.5. The method of claim 1 , wherein the predetermined period of time is between 6 hours and 24 hours.6. The method of claim 1 , wherein the mechanical pressure is applied to the powder in a vacuum of less than 0.1 atm.7. The method of claim 6 , wherein the mechanical pressure and vacuum are held constant while the pressed pellet is allowed to cool to room temperature.8. The method of claim 1 , wherein the pressed pellet is annealed in an inert atmosphere for 6 hours or more at 400° C.9. The method of claim 1 , wherein claim 1 , prior to applying the mechanical pressure claim 1 , the powder is first packed into a forming ...

BORON COATED STRAWS FOR NEUTRON DETECTION WITH PIE-SHAPED CROSS-SECTION

A boron coated straw detector for use in a neutron detection system is disclosed comprising a boron coated straw having at least one boron-coated septum radially oriented and extending a pre-determined distance towards the center of the straw. Preferably, the straw comprises a plurality of septa comprising a rigid surface, coated on both sides with a boron composition. Preferably, the septa run the length of the straw detector from one end of the straw to the other. The area coated on the septa adds to the area coated on the arc segments offering a significant benefit in sensitivity of the neutron detector. 1. An improved boron-coated straw detector system comprising a boron-coated straw having a diameter and at least one septum extending radially inward from inner surface of the straw , each septum having a boron-coating on two sides and a length of about 0.25 times the straw diameter or less.2. The straw detector system of claim 1 , wherein the straw comprises a plurality of septa.3. The straw detector system of claim 1 , wherein each septum is within about 5% difference in length.4. The straw detector system of wherein the straw comprises an even number of septa.5. The straw detector system of claim 2 , wherein each septum extends from a first end of the straw to a second opposite end of the straw.6. The straw detector system of claim 2 , wherein the straw comprises 6 to 12 septa.7. The straw detector system of claim 6 , wherein the septa are equally spaced apart around the interior surface of the straw.8. The straw detector system of claim 7 , wherein the length of each septum is within about 5% of the length of an arc length between each septum.9. The straw detectors system of claim 7 , wherein the length of each septum is between about 50% and 100% of an arch length between each septum.10. A neutron detection system comprising a plurality of boron-coated straws formed into a panel claim 7 , each boron-coated straw in the panel having a plurality of septa ...

Neutron Detection

A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include at least one of hafnium (Hf), samarium (Sm), erbium (Er), neodymium (Nd), tantalum (Ta), lutetium (Lu), europium (Eu), dysposium (Dy), or thulium (Tm). 1. An apparatus comprising:a microchannel plate comprising a structure that defines a plurality of microchannels; andlayers of materials disposed on walls of the microchannels, the layers including a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material, in which the layer of neutron sensitive material comprises at least one of hafnium (Hf), samarium (Sm), erbium (Er), neodymium (Nd), tantalum (Ta), lutetium (Lu), europium (Eu), dysposium (Dy), or thulium (Tm).2. The apparatus of in which the layer of neutron sensitive material comprises at least 50 mol % of neutron sensitive material.3. The apparatus of in which the layer of neutron sensitive material comprises at least 30 mol % of neutron sensitive material.4. The apparatus of in which the layer of neutron sensitive material comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium.5. The apparatus of in which the layer of neutron sensitive material comprises a compound that comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium claim 1 , and the compound comprises at least one of boron-10 oxide claim 1 , boron-10 nitride claim 1 , lithium-6 oxide claim 1 , or gadolinium oxide.6. The apparatus of in which the structure comprises at least one of glass claim 1 , polymer claim 1 , or plastic.7. The apparatus of in which the semiconducting material comprises AlZnOalloy claim 1 , x and y being ...

BORON BASED THIN-FILM COATINGS

An apparatus includes a first layer of a rare earth element. The apparatus further includes a thin-film coating layer deposited on the first layer, where the thin-film coating layer includes boron. 1. An apparatus comprising:a first layer comprising a rare earth element; anda thin-film coating layer deposited on the first layer, the thin-film coating layer comprising boron.2. The apparatus of claim 1 , wherein the thin-film coating layer comprises one of elemental boron (B) claim 1 , boron carbide (BC) claim 1 , or boron nitride (BN).3. The apparatus of claim 2 , wherein the rare earth element comprises one of gadolinium (Gd) claim 2 , europium (Eu) claim 2 , lanthanum (La) or neodymium (Nd).4. The apparatus of claim 3 , wherein the rare earth element comprises its oxide form of GdO claim 3 , EuO claim 3 , LaO claim 3 , or NdO.5. The apparatus of claim 3 , wherein the first layer is deposited on a metal claim 3 , ceramic claim 3 , glass or polymer substrate.6. The apparatus of claim 5 , comprising the rare earth element Gd or GdOon the first layer claim 5 , wherein the thin-film coating comprises one of elemental boron (B) claim 5 , boron carbide (BC) or boron nitride (BN).7. The apparatus of claim 6 , wherein the boron is present as the boron-10 isotope claim 6 , comprising a thin-film coating of one of elemental boron (B) claim 6 , boron carbide (BC) or boron nitride (BN).8. The apparatus of claim 7 , comprising a second substrate coupled to a first substrate through a gas-discharge media claim 7 , wherein the second substrate is coated with a plurality of electrodes.9. The apparatus of claim 8 , wherein the first and second substrates and the gas gas-discharge media provide a neutron detector functionality.10. The apparatus of claim 9 , wherein one of the first or second substrates comprises a plurality of anodes claim 9 , and the other one of the first or second substrates comprises a plurality of cathodes.11. A method of manufacturing an apparatus comprising: ...

Neutron Imager With Spaced Diamond Detector Arrays

A neutron detector system, with a detector having a pair of spaced diamond detector layers, sandwiched between outer silicon layers. In response to incident neutrons, the detector system measures pulse heights and response times, and from those measurements, calculates the carbon recoil energy and time of flight of scattered neutrons. This data is further used to calculate a “direction cone”, which represents the approximate angle of arrival of the incident neutron. These direction cones can be used to image neutron events.

PARTICLE DETECTOR AND METHOD OF MAKING THE SAME

A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the front electrode layer. The semiconductor heterojunction has at least a polycrystalline n-type layer and at least a polycrystalline p-type layer. A back electrode layer is disposed over the semiconductor heterojunction. The back electrode includes at least one removed portion that separates a first portion of the back electrode layer from a second portion of the back electrode layer. The particle detector also includes a first body of electrically insulating material which separates a first portion of the semiconductor heterojunction from a second portion of the semiconductor heterojunction. The first body of electrically insulating material also separates a first portion of the front electrode layer from a second portion of the front electrode layer. 1. A particle detector , comprising:a support member;a front electrode layer disposed over the support member;a semiconductor heterojunction having at least a polycrystalline n-type layer and at least a polycrystalline p-type layer, the semiconductor heterojunction disposed over the front electrode layer;a back electrode layer disposed over the semiconductor heterojunction, the back electrode comprising at least one removed portion that separates a first portion of the back electrode layer from a second portion of the back electrode layer; anda first body of electrically insulating material which separates a first portion of the semiconductor heterojunction from a second portion of the semiconductor heterojunction and a first portion of the front electrode layer from a second portion of the front electrode layer.2. The particle detector of claim 1 , wherein the polycrystalline n-type layer is CdS and the polycrystalline p-type layer is CdTe.3. The particle detector of claim 1 , further comprising a neutron activation layer disposed over the back electrode layer ...

BULK SEMICONDUCTING SCINTILLATOR DEVICE FOR RADIATION DETECTION

A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons. 1. A bulk semiconducting scintillator device , comprising:{'sub': '2', 'a Li-containing semiconductor compound of general composition Li-III-VI, wherein III is a Group III element and VI is a Group VI element;'} in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and', 'in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons., 'wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein2. The device of claim 1 , wherein the Li-containing semiconductor compound comprises LiInSe.3. The device of claim 1 ...

Methods of Making Semiconductor X-Ray Detector

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector. 1. An image sensor comprising:one or more packages of semiconductor radiation detectors;wherein each of the one or more packages comprises a radiation detector,wherein the radiation detector comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer,wherein the radiation absorption layer is continuous along the first strip of semiconductor wafer with no coverage gap,wherein the first strip and the second strip are longitudinally aligned and bonded together;wherein the one or more packages comprise a first group of radiation detectors bonded and electrically connected to a first PCB and a second group of the radiation detectors bonded and electrically connected to a second PCB, wherein the first PCB and the second PCB are bonded and electrically connected to a system PCB.2. The image sensor of claim 1 , wherein the electronics layer comprises transmission lines at a first surface of the second strip of semiconductor wafer bonded to the first strip of semiconductor wafer.3. The image sensor of claim 2 , wherein the electronics layer comprises vias electrically connected to the transmission lines.4. The image sensor of claim 3 , wherein the second strip of ...

FABRICATING RADIATION-DETECTING STRUCTURES

Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities. 1. A method comprising: providing a semiconductor substrate, the semiconductor substrate comprising a plurality of cavities extending into the semiconductor substrate from a surface thereof; and', 'electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, wherein the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles., 'fabricating a radiation-detecting structure, the fabricating comprising2. The method of claim 1 , wherein the providing comprises electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate.3. The method of claim 2 , wherein the providing further ...

RADIATION DETECTOR

According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction. 1. A radiation detector , comprising:a first member including a scintillator layer;an organic member including an organic semiconductor layer; anda first conductive layer,the first conductive layer including a first conductive region and a second conductive region,a second direction from the first conductive region toward the second conductive region crossing a first direction from the organic member toward the first member,a first portion of the organic member being between the first conductive region and the second conductive region in the second direction.2. The detector according to claim 1 , whereinthe scintillator layer emits light when radiation is incident on the scintillator layer,the first member includes a first opposing portion facing the first conductive region,an absolute value of a difference between a first refractive index of the first opposing portion for a peak wavelength of the light and a second refractive index of the first portion for the peak wavelength is less than an absolute value of a difference between the first refractive index and a third refractive index of the first conductive layer for the peak wavelength.3. The detector according to claim 2 , whereinthe first refractive index is not less than 1.43 but less than 1.69,the second refractive index is not less than 1.43 but less than 1.69, andthe third refractive index is not less than 1.69 and not more than 2 ...

THERMAL NEUTRON DETECTOR AND GAMMA-RAY SPECTROMETER UTILIZING A SINGLE MATERIAL

A combined thermal neutron detector and gamma-ray spectrometer system, including: a detection medium including a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; and a photodetector coupled to the detection medium also operable for detecting the gamma rays. Optionally, the detection medium includes a LiInSecrystal. Optionally, the detection medium comprises a compound formed by the process of: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound and heating; wherein the Group I element includes lithium. 1. A combined thermal neutron detector and gamma-ray spectrometer system , comprising:a detection medium comprising a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; anda photodetector coupled to the detection medium also operable for detecting the gamma rays.2. The system of claim 1 , wherein the detection medium comprises a LiInSecrystal.3. The system of claim 1 , wherein the photodetector comprises a high-band gap photodetector.4. The system of claim 1 , wherein the photodetector comprises one of a Si Avalanche Photodiode (APD) and a Si Photomultiplier (SiPM).5. The system of claim 1 , further comprising a bias voltage source coupled to the detection medium.6. The system of claim 1 , further comprising a plurality of contacts coupled to the detection medium.7. The system of claim 1 , further comprising an amplification system.8. The system of claim 1 , further comprising a data collection and processing device.9. The system of claim 1 , wherein the detection medium comprises a I-III-VIcompound formed by the process of:melting a Group III element;subsequently adding a Group I element to the ...

SOLID-STATE NEUTRON DETECTOR

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-BN or h-BN or BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-BN or h-BN or BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer. 1. A method for fabricating a neutron detector comprising:{'sup': 10', '10, 'providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-BN or h-BN or BN or BN) having a thickness (t);'}dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L); anddepositing a first metal contact on a first surface of at least one of the BN strips and a second metal contact on a second surface of the at least one BN strip.2. The method of claim 1 , further comprising connecting the first metal contact and the second metal contact to a measurement circuit.3. The method of claim 2 , further comprising measuring a plurality of neutrons using the neutron detector.4. The method of claim 3 , further comprising using the neutron detector to detect nuclear materials claim 3 , to perform geothermal and/or well logging claim 3 , or perform planetary missions.5. The method of claim 1 , further comprising:placing the at least one BN strip onto an electrically insulating submount prior to depositing the first metal contact and the second metal contact; andwherein the first surface comprises a side of the at least one BN strip and the second surface comprises an opposite side ...

Apparatus and Method for the Determination of One or More Neutron Source Characteristics

A neutron detection apparatus includes a neutron detector and an analyzer. The neutron detector includes a plurality of neutron detector assemblies, where each of the neutron detector assemblies includes a plurality of neutron detection devices. The neutron detector also includes a moderating volume. The plurality of neutron detector assemblies are disposed within the moderating volume so as to form a three-dimensional array of neutron detection devices within the moderating volume. The analyzer is communicatively coupled to each of the neutron detection devices of the plurality of neutron detector assemblies. The analyzer configured to receive one or more measured response signals from each of the neutron detection devices, and perform one or more analysis procedures to determine one or more characteristics associated with the one or more neutron sources based at least on the received one or more measured response signals. 1. An apparatus for determination of one or more neutron source characteristics comprising: a plurality of neutron detector assemblies, each of the neutron detector assemblies including a plurality of neutron detection devices, wherein the neutron detection devices are configured to detect one or more characteristics of neutrons emanating from one or more neutron sources and impinging on the one or more neutron detection devices; and', 'a moderating volume, wherein the plurality of neutron detector assemblies are disposed within the moderating volume so as to form a three-dimensional array of neutron detection devices within the moderating volume, wherein the moderating volume is configured to moderate the energy of neutrons impinging on one or more of the neutron detector assemblies; and, 'a neutron detector including receive one or more measured response signals from each of the neutron detection devices, the one or more measured response signals indicative of a detected neutron event; and', 'perform one or more analysis procedures to determine ...

METHODS FOR MANUFACTURING LITHIUM FOIL NEUTRON DETECTORS

A system and method for making a neutron detector includes stacking anode frames and laminated frames to form a detector insert. The laminated frames are formed by laminating a foil of neutron-responsive material to an aluminum frame plated with a metal that does not react with the neutron-responsive material. The anode frames include an anode wire tensioned to a predetermined tension. The anode wires are electrically coupled to a top lid that includes an electrical connector and a gas feed through. The top lid is pressed into a tank with the detector insert. 1. A method of making a neutron detector , the method comprising:laminating a foil of neutron-responsive material to a plated aluminum frame that defines a plurality of windows such that foil is exposed on both sides of the plated aluminum frame to form a laminated frame assembly for placement into a gas-filled radiation detector, wherein the plated aluminum frame is plated with a metal that does not react with the neutron-responsive material.2. The method of claim 1 , wherein the neutron-responsive material is lithium.3. The method of claim 1 , wherein the metal is one of nickel claim 1 , gold claim 1 , platinum claim 1 , palladium claim 1 , silver claim 1 , tin claim 1 , and copper.4. The method of claim 1 , wherein the laminating is performed in an environment having Dew point less than minus 40° C.5. The method of claim 1 , wherein the foil includes a plastic covering on one side of the foil claim 1 , and the step of laminating includes inserting a first layer of Teflon adjacent the plated aluminum frame and a second layer of Teflon adjacent the plastic covering.6. The method of claim 1 , wherein the laminating is at a temperature between 50° C. and 120° C.7. An apparatus for detecting neutrons claim 1 , the apparatus comprising:a detector housing defining a chamber to retain a detector gas;a plurality of laminated frames comprising a plated aluminum frame defining a plurality of windows to which a foil of ...

NEUTRON-DETECTING APPARATUSES AND METHODS OF FABRICATION

Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.

NEUTRON RADIATION SENSOR

Embodiments utilize high energy particles generated by nuclear reactions involving neutron radiation and neutron-sensitive materials to generate and maintain an electric potential gradient between an electrode and a region separated from the electrode by an electric insulator. System and methods contemplated by the invention thereby enable passive detection of neutrons without an externally applied electric potential bias by maintaining a charge accumulation facilitated by nuclear reactions involving neutrons. The charge accumulation produces an electric potential gradient within an electric insulator that separates the charge accumulation from an exterior region. 1. A system for detecting exposure to neutrons , the system comprising:a neutron-sensitive material configured to eject, via nuclear reactions, high energy particles that produce charge carriers in at least one of an interior electrode and an electric insulator;wherein the interior electrode is configured to accumulate a portion of the charge carriers produced by the high-energy particles;wherein the electric insulator disposed between the interior electrode and an exterior region, andwherein the electric insulator is configured to inhibit propagation of the charge carriers collected by the interior electrode to the exterior region to maintain an electric potential difference between the interior electrode and the exterior region.2. The system of claim 1 , wherein the electric insulator is configured to allow the high-energy particles to propagate from the neutron-sensitive material to one or more of the exterior region and the interior electrode.3. The system of claim 1 , wherein the ejection of high-energy particles from the neutron-sensitive material produces an electric charge accumulation on the neutron-sensitive material.4. The system of claim 1 , wherein the high-energy particles ejected from the neutron-sensitive material produce electron-hole pairs in the electric insulator.5. The system of claim ...

LITHIUM-CONTAINING CHALCOPHOSPHATES FOR THERMAL NEUTRON DETECTION

Inorganic compounds having the formula LiMPQ, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, ar provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (Li) to enhance their neutron detecting capabilities. 1. A lithium-containing chalcophosphate compound having the formula LiMPQ , where M is Ga , In , Bi , Sb , As , Al , or a combination thereof , and Q is S , Se , or a combination thereof.2. The compound of claim 1 , wherein the Li comprises Li.3. The compound of claim 1 , wherein the compound is a quaternary compound.4. The compound of claim 3 , wherein the compound is doped with an external dopant.5. The compound of claim 4 , wherein the external dopant is selected from Cd claim 4 , Hg claim 4 , Pb claim 4 , Sn claim 4 , and combinations of two or more thereof.6. The compound of having the formula LiInPSe.7. The compound of claim 3 , wherein the compound has the formula LiInMPSe claim 3 , where M is the external dopant and x has a value in the range from 0.00001 to 0.05.8. The compound of claim 7 , wherein the compound is LiInCdPSe claim 7 , where Cd is the external dopant and x has a value in the range from 0.00001 to 0.05.9. The compound of claim 6 , wherein the Li comprises Li.10. The compound of claim 1 , wherein the compound is in the form of a single-crystal having a length of at least 0.5 cm.11. The compound of claim 6 , wherein the compound is in the form of a single-crystal having a length of at least 0.5 cm.12. A method for detecting thermal neutrons or alpha particles claim 6 , the method comprising:{'sub': 2', '6, 'applying an electric field across a single-crystal of a lithium-containing chalcophosphate compound having the formula LiMPQ, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S, Se, or a combination thereof,'}exposing the ...

SYSTEMS AND METHODS FOR SPENT FUEL POOL SUBCRITICALITY MEASUREMENT AND MONITORING

A system and method for measuring and monitoring axial flux to determine subcriticality in a spent fuel pool of a nuclear power plant. In certain embodiments of this invention, one or more neutron detectors are operable to generate signals resulting from neutron interactions in the spent fuel pool, a counting device counts the signals which are generated by the one or more neutron detectors, a connecting means electrically connects the one or more neutron detectors to the counting device, a signal analyzer is used to determine reactivity of the fuel assemblies in the spent fuel pool based on the counted signals, a power supply provides power for the neutron detectors, the counting device and the system analyzer, and a software code containing an axial flux curve index is used to correlate the counted signals to determine the subcriticality of the spent fuel pool. 1. A system for measuring and monitoring axial flux to determine subcriticality in a spent fuel pool of a nuclear power plant , which comprises:one or more neutron detectors operable to generate signals resulting from neutron interactions in the spent fuel pool;a counting device for counting said signals generated by the one or more neutron detectors;a connecting means to electrically connect the one or more neutron detectors to the counting device;a signal analyzer to determine reactivity of the fuel assemblies in the spent fuel pool based on counted signals;a power supply for the neutron detectors, the counting device and the signal analyzer; anda software code to correlate the counted signals to a predetermined axial flux curve index to determine the subcriticality of the spent fuel pool.2. The system of claim 1 , wherein the one or more neutron detector comprises at least one silicon carbide semiconductor diode.3. The system of claim 1 , wherein the nuclear power plant is a pressurized water reactor.4. The system of claim 1 , wherein the software code determines k-effective.5. The system of claim 4 , ...

WIRELESS, MOTION AND POSITION-SENSING, INTEGRATING RADIATION SENSOR FOR OCCUPATIONAL AND ENVIRONMENTAL DOSIMETRY

Described is a radiation dosimeter including multiple sensor devices (including one or more passive integrating electronic radiation sensor, a MEMS accelerometers, a wireless transmitters and, optionally, a GPS, a thermistor, or other chemical, biological or EMF sensors) and a computer program for the simultaneous detection and wireless transmission of ionizing radiation, motion and global position for use in occupational and environmental dosimetry. The described dosimeter utilizes new processes and algorithms to create a self-contained, passive, integrating dosimeter. Furthermore, disclosed embodiments provide the use of MEMS and nanotechnology manufacturing techniques to encapsulate individual ionizing radiation sensor elements within a radiation attenuating material that provides a “filtration bubble” around the sensor element, the use of multiple attenuating materials (filters) around multiple sensor elements, and the use of a software algorithm to discriminate between different types of ionizing radiation and different radiation energy. 112-. (canceled)13. The device of claim 46 , wherein the radiation sensor array comprises ionizing radiation sensors.14. The device of claim 46 , wherein the radiation sensor array comprises non-ionizing radiation sensors claim 46 , hazardous chemical sensors claim 46 , or other biochemical substance sensors.15. The device of claim 46 , wherein the on-board wireless transmitter is configured to transmit data via an unspecified wireless transmission communication protocol.16. The device of claim 46 , wherein the integrated sensor module is integrated into a dosimetry badge.17. The device of claim 46 , wherein the integrated sensor module is integrated into unmanned airborne vehicles (UAV's).18. The device of claim 17 , wherein the integrated sensor module employs a flocking algorithm to coordinate between multiple UAV's and track the position and distribution of materials.19. The device of claim 46 , wherein the integrated ...

NEUTRON DETECTOR AND METHOD FOR DETECTING NEUTRONS

An apparatus comprises a neutron detector. The neutron detector comprises a conversion layer comprising a mixture of a neutron absorbing material and a scintillation material; and a photodetector optically coupled to the conversion layer and arranged to detect photons generated as a result of neutron absorption events in the conversion layer; wherein the apparatus is adapted to be carried by a user and the conversion layer is positioned within the neutron detector such that when the apparatus is being carried by a user in normal use neutrons are absorbed in the conversion layer after passing through the user such that the user's body provides a neutron moderating effect. In some cases the apparatus may be carried in association with a backpack or clothing worn by a user, for example, the neutron detector may be sized to fit in a pocket. In other cases the apparatus may be a hand-held device with the conversion layer arranged within a handle of the device to be gripped by a user when being carried. 1. An apparatus comprising a neutron detector , the neutron detector comprising:a conversion layer comprising a mixture of a neutron absorbing material and a scintillation material;a light-guide arranged to receive photons emitted from the scintillation material; anda photodetector optically coupled to the light-guide and arranged to detect photons generated as a result of neutron absorption events in the conversion layer;wherein the apparatus is adapted to be carried by a user and the conversion layer is positioned within the neutron detector such that when the apparatus is being carried by a user in normal use neutrons are absorbed in the conversion layer after passing through the user;wherein the conversion layer and the light-guide are arranged together to form a neutron detector element having a thickness which is less than 10 mm.2. The apparatus of claim 1 , wherein the light-guide is a wavelength shifting light-guide arranged to receive photons emitted from the ...

Modular gamma camera and modular gamma camera assembly

The modular gamma camera (1) comprises at least one hybrid semiconductor detector (2) of transient ionizing radiation and at least one collimator (3) of transient ionizing radiation arranged in front of the hybrid semiconductor detector (2) in the direction of propagation of transient ionizing radiation. The core of the invention is based on the fact that the modular gamma camera consists of a housing (4) which has at least one opening (5) on the front side provided with a holder of an exchangeable collimator (3), and which has a rear side provided with means for connecting a heat sink (6), and its sides provided with connecting means for modular chain connection of adjacent housings (4). In housing (4) is placed at least one hybrid semiconductor detector (2) of transient radiation. The subject of the invention is the modular gamma camera assembly (1) also, in which the housings (4) in the assembly are connected in a circle.

SYSTEMS FOR DETERMINING AND IMAGING WAX DEPOSITION AND SIMULTANEOUS CORROSION AND WAX DEPOSIT DETERMINATION IN PIPELINES

The systems for determining and imaging wax deposition and simultaneous corrosion and wax deposit determination in pipelines relate to systems for determining wax deposition and corrosion by one or both of two techniques. In both techniques, a source of neutron radiation is directed at the pipeline. In one technique, a neutron detector surrounded by an absorption shield defining a collimation window counts neutrons reflected back to the detector by back diffusion or backscatter radiation. In the other technique, a gamma ray detector measures gamma rays emitted when the emitted neutrons are absorbed in the pipeline. A neutron moderator-reflector is placed around three sides of the pipeline to increase the likelihood of neutron capture. 1. A system for determination of wax deposition and corrosion in a pipeline , comprising:a neutron radiation source for emitting neutrons towards a pipeline;a slow neutron detector;an absorption shield having a high slow neutron absorption cross section surrounding the slow neutron detector, the absorption shield defining a collimation window for collimating neutrons diffusing back to the detector from the pipeline; andmeans for counting neutrons diffusing back to the slow neutron detector, the amount of wax deposition and corrosion in the pipeline being positively correlated with the count of neutrons as provided by the counting means.2. The system for determination of wax deposition and corrosion in a pipeline according to claim 1 , further comprising means for calibrating the system before the system is used to determine wax deposition and corrosion in the pipeline.3. The system for determination of wax deposition and corrosion in a pipeline according to claim 1 , wherein composition of the absorption shield surrounding the slow neutron detector is selected from the group consisting of a thick layer of boron powder claim 1 , cadmium claim 1 , and boric acid.4. The system for determination of wax deposition and corrosion in a ...

COMBINED NEUTRON AND GAMMA-RAY DETECTOR AND COINCIDENCE TEST METHOD

A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria. 1. A detector for both gamma-rays and neutrons , comprising:a semiconductor layer including a semiconductor material suitable for capturing gamma-rays;a glass plate in contact with the semiconductor layer;a gadolonium (Gd) converter layer in contact with the glass plate opposite the semiconductor layer for capturing neutrons;a layer of silicon PIN (p-type/intrinsic/n-type) material of suitable thickness in contact with the Gd converter layer opposite the glass plate to detect electrons produced by neutrons captured in the Gd converter layer;a cathode contact in electrical contact with the glass plate;a first anode contact in contact with the semiconductor layer;a second anode contact in contact with the silicon PIN layer; anda processor in electric contact with the first and second anode contacts, the processor being configured to cooperate with the anode contacts and the cathode contacts to establish electric fields across the semiconductor layer and the Si PIN layer, and being configured to differentiate between signals generated by a neutron event and signals generated by a gamma-ray event.2. A detector as set forth in claim 1 , where ...

HIGH EFFICIENCY 3D NANOSTRUCTURED NEUTRON DETECTORS

Exemplary embodiments of the present invention comprise a high efficiency 3D nanostructured neutron detector. The neutron detector comprises a primary and secondary substrate, each substrate comprising an external and internal surface area, wherein one of the respective substrates comprises an n-type semiconductor material and the other substrate comprises a p-type semiconductor material. Disposed between the primary and secondary substrates is a composite structure consisting of a predetermined neutron converting material and a predetermined neutron detecting material, wherein one of the composite materials is fabricated into a nanostructure in the configuration of a stack of nanosheets, a 3D nanowire network, or as 3D nano-trees, and a pair of electrodes, wherein one electrode is disposed on the respective external surface areas of the primary and secondary substrates. 1. A high efficiency 3D nanostructured neutron detector , the neutron detector comprising: 'a composite structure consisting of a predetermined neutron converting material and a predetermined neutron detecting material, wherein one of the composite materials is fabricated into a nanostructure in the configuration of a stack of nanosheets, a 3D nanowire network, or as 3D nano-trees; and', 'a primary and secondary substrate, each substrate comprising an external and internal surface area, wherein one of the respective substrates comprises an n-type semiconductor material and the other substrate comprises a p-type semiconductor material, and further, disposed between the primary and secondary substrates isa pair of electrodes, wherein one electrode is disposed on the respective external surface areas of the primary and secondary substrates.2. The 3D nanostructure neutron detector of claim 1 , wherein the nanostructure is fabricated from nanotubes or nanowires.3. The 3-D nanostructure neutron detector of claim 2 , wherein the structural parameters of the nanostructure are determined in order to control ...

Fabrication and Operation of Multi-Function Flexible Radiation Detection Systems

Curved, flexible arrays of radiation detectors are formed by using standard silicon semiconductor processing materials and techniques and additional functionalization through integration of conversion and shielding materials. The resulting flexible arrays can be handled, integrated, further functionalized and deployed for a wide variety of applications where conventional sensors do not provide the desired functionality, form factors and/or reliability. The arrays can be stacked and include multiple types and thicknesses of conversion layers, enabling the detector to simultaneously detect multiple radiation types, and perform complex, simultaneous functions such as energy discrimination, spectroscopy, directionality detection, and particle trajectory tracking of incident radiation.

NEUTRON DETECTOR

A neutron detecting system and method. The neutron detecting system may include one or more coated substrates including a piezoelectric substrate having a first surface and a second surface opposite of the first surface, a coating of boron (B) on the first surface, and a conductive backplane deposited on the second surface. The coated substrates may be stacked to form a stacked layer array. When the neutrons are captured by the coating of B on the coated substrates, energy will be released, causing crystal dislocation of the piezoelectric substrate, thus producing an electric signal through the conductive backplane of the coated substrates. The electric signal may be received with an amplifier to produce an amplified electric signal provided to a processor or circuitry. The processor or circuitry may send a notification signal to a visual or audible user interface indicating detection of the neutrons. 1. A neutron detector comprising:an piezoelectric substrate having a first surface and a second surface opposite of the first surface, wherein the piezoelectric substrate is configured to convert energy from one form to another;a neutron-capture coating on the first surface, the coating configured to detect a presence of neutrons; anda conductive backplane on the second surface, wherein the conductive backplane carries an electric signal generated by the piezoelectric substrate when one or more neutrons strike the neutron-capture coating.2. The neutron detector of claim 1 , wherein the piezoelectric substrate may comprise at least one of a piezoelectric film claim 1 , a highly polarized polyvinylidene fluoride (PVDF) film claim 1 , and lithium niobate crystals.3. The neutron detector of claim 1 , further comprising an anodized aluminum housing surrounding the substrate claim 1 , the neutron-capture coating claim 1 , and the conductive backplane.4. The neutron detector of claim 1 , wherein the conductive backplane is at least one of aluminum claim 1 , copper claim 1 , ...

Module System for a Radiometric Measuring Device

A module system for a radiometric measuring device includes a basic module having a sensor arrangement designed to generate a measurement signal on the basis of radiation which strikes the sensor arrangement, a signal evaluation unit electrically coupled to the sensor arrangement and being designed to determine a measurement variable on the basis of the measurement signal, a control device interface, wherein the basic module is coupleable to at least one control device by the control device interface for interchanging data, the basic module being supplied with electrical energy solely via its control device interface in a basic operating state, and an expansion module interface. The module system further includes an expansion module which is separate from the basic module and has a basic module interface, the basic module interface being able to be coupled to the expansion module interface for interchanging data, interchanging energy, and/or interchanging measurement signals, a number of functional groups, and an energy supply interface coupleable to an energy supply unit separate from the basic module and the expansion module, wherein energy provided via the energy supply interface is used to supply energy to the expansion module.

Method for producing a neutron detector component comprising a boron carbide layer for use in a neutron detecting device

A method for producing a neutron detector component ( 1 ) comprising a neutron detecting boron carbide layer ( 2 ) comprising boron-10 arranged on a substantially neutron transparent substrate ( 3 ) is provided. The neutron detecting boron carbide layer ( 2 ) comprises boron-10 to a desired thickness (t), and wherein the boron-10 content of the neutron detecting boron carbide layer ( 2 ) is at least about 60 at. %.

Miniaturized fast neutron spectrometer

An isotropic neutron detector includes a spherical secondary particle radiator component and a plurality of stacked semiconductor detectors, A first semiconductor detector is coupled to at least a portion of the spherical secondary particle radiator component, forming a portion of a first concentric shell thereover. A second semiconductor detector coupled to at least a portion of the first semiconductor detector, forming a portion of a second concentric shell thereover.

SEMICONDUCTOR PHOTOMULTIPLIER WITH BASELINE RESTORATION FOR A FAST TERMINAL SIGNAL OUTPUT

A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads; a first node of each output load is common to one of the photosensitive elements and the corresponding quench element; and a third electrode provides an output signal from the photosensitive elements; the third electrode is coupled to a second node of the respective output loads; the outputs loads fully or partially correct an overshoot of the output signal on the third electrode. 1. A semiconductor photomultiplier comprising:a plurality of photosensitive elements,a first electrode arranged to provide a bias voltage to the photosensitive elements,a second electrode arranged as a biasing electrode for the photosensitive elements,a plurality of quench resistive elements each associated with a corresponding photosensitive element,a plurality of output loads having respective first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench resistive element; anda third electrode provides an output signal from the photosensitive elements; the third electrode is coupled to the second node of the respective output loads; wherein the output loads fully or partially correct an overshoot of the output signal on the third electrode.2. A semiconductor photomultipler as claimed in claim 1 , wherein the output signal on the third electrode is proportional to number of photons detected.3. A semiconductor photomultiplier as claimed in claim 1 , wherein each output load comprises at least one of a resistive load element or a capactive load element or a combination thereof.4. A semiconductor photomultiplier as claimed in ...

Nuclear reactor system, transmitter device therefor, and associated method of measuring environmental conditions

A transmitter device includes a neutron detector structured to detect neutron flux, a capacitor electrically connected in parallel with the neutron detector, a gas discharge tube having an input end and an output end, and an antenna electrically connected to the output end. The input end is electrically connected with the capacitor. The antenna is structured to emit a signal corresponding to the neutron flux.

SEMICONDUCTOR DETECTOR

The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution. 1. A semiconductor detector comprising a semiconductor crystal , a cathode , an anode and at least one ladder electrode;the semiconductor crystal comprising a top surface, a bottom surface and at least one side; wherein the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal;wherein the cathode is disposed on the bottom surface of the semiconductor crystal, wherein the anode is disposed on the top surface of the semiconductor crystal, and wherein the ladder electrode is disposed on the at least one side of the semiconductor crystal; andwherein the ladder electrode comprises a plurality of sub-electrodes.2. The semiconductor detector of claim 1 , characterized in that claim 1 , the shape of the semiconductor crystal is a cuboid.3. The semiconductor detector of claim 2 ,wherein the anode is rectangular and covers a partial area at a middle position of the top surface;wherein the semiconductor detector comprises a first ladder electrode and a second ladder electrode;wherein the first ladder electrode and the second ladder electrode are disposed respectively on a first side and a second side of the semiconductor crystal with their ...

SEMICONDUCTOR PHOTOMULTIPLIER WITH BASELINE RESTORATION FOR A FAST TERMINAL SIGNAL OUTPUT

A semiconductor photomultiplier (SPM) device is described. The SPM comprises a plurality of photosensitive elements, a first electrode arranged to provide a bias voltage to the photosensitive elements, a second electrode arranged as a biasing electrode for the photosensitive elements, a plurality of quench resistive elements each associated with a corresponding photosensitive element, a plurality of output loads each having a capacitive load operably coupled to a resisitive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench element; and a third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements. The outputs loads fully or partially correct an overshoot of an output signal on the third electrode. 1. A semiconductor photomultiplier comprising:a plurality of photosensitive elements,a first electrode arranged to provide a bias voltage to the photosensitive elements,a second electrode arranged as a biasing electrode for the photosensitive elements,a plurality of quench resistive elements each associated with a corresponding photosensitive element,a plurality of output loads each having a capacitive load operably coupled to a resistive load in a parallel configuration between first and second nodes; each first node is common to one of the photosensitive elements and the corresponding quench resistive element; anda third electrode coupled to the second nodes of the output loads to provide an output signal from the photosensitive elements; wherein the output loads fully or partially correct an overshoot of an output signal on the third electrode.2. A semiconductor photomultipler as claimed in claim 1 , wherein the output signal on the third electrode is proportional to number of photons detected.3. A semiconductor photomultiplier as claimed in claim 1 , wherein each resistive load comprises a resistor. ...

Charge sensors using inverted lateral bipolar junction transistors

A method for forming a sensor includes forming a base-region barrier in contact with a base substrate. The base-region barrier includes a monocrystalline semiconductor having a same dopant conductivity as the base substrate. An emitter and a collector are formed in contact with and on opposite sides of the base-region barrier to form a bipolar junction transistor. The collector, the emitter and the base-region barrier are planarized to form a level surface opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

Neutron Detection

A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium. 1. An apparatus comprising: a plurality of microfibers that define interstices between the microfibers;', 'layers of materials disposed on surfaces of the microfibers, the layers including a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material;', 'an input electrode; and', 'an output electrode, in which the microfibers are disposed between the input and output electrodes., 'a microfiber plate comprising2. The apparatus of in which the layer of neutron sensitive material comprises at least 50 mol % of neutron sensitive material.3. The apparatus of in which the layer of neutron sensitive material comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium.4. The apparatus of in which the layer of neutron sensitive material comprises a compound that comprises at least one of boron-10 claim 1 , lithium-6 claim 1 , or gadolinium claim 1 , and the compound comprises at least one of boron-10 oxide claim 1 , boron-10 nitride claim 1 , lithium-6 oxide claim 1 , or gadolinium oxide.5. The apparatus of in which the layer of neutron sensitive material has a thickness in a range from 0.5 to 5 microns.6. The apparatus of in which the layer of semiconducting material has a thickness in a range from 50 to 1000 nm.7. The apparatus of in which the semiconducting material comprises AlZnOalloy claim 1 , x and y being positive integers.8. The apparatus of claim 1 , comprising a data processor to determine whether a neutron has been detected based on information derived from a charge induced on the ...

COMPONENT CONFIGURATION FOR A ROBUST TUNABLE SENSOR SYSTEM FOR A HIGH RADIATION ENVIRONMENT

A method of capturing and analyzing information for a particle detection system comprises generating a reaction to a plurality of particles using a converter material, wherein the converter material is operable to interact with the plurality of particles. The method further comprises converting a response to the reaction to an electrical signal using a plurality of sensors, wherein the converter material is operable to be coated onto the plurality of sensors, and wherein each of the plurality of sensors comprises an array of discrete pixel sensors each with a respective (x,y) coordinate within the array. Further, the method comprises processing the electrical signal to generate data regarding each pixel on the array of discrete pixels and serializing the data collected from the plurality of sensors and transmitting the data over thin cables to a processing unit that is located at a separate and remote location from the plurality of sensors. 1. A method of capturing and analyzing information for a particle detection system , the method comprising:generating a reaction to a plurality of particles using a converter material, wherein the converter material is operable to interact with the plurality of particles;converting a response to the reaction to an electrical signal using a plurality of sensors, wherein the converter material is operable to be coated onto the plurality of sensors, and wherein each of the plurality of sensors comprises an array of discrete pixel sensors each with a respective (x,y) coordinate within the array;processing the electrical signal to generate data regarding each pixel on the array of discrete pixels;serializing the data collected from the plurality of sensors and transmitting the data over thin cables to a processing unit, wherein the processing unit is located at a separate and remote location from the plurality of sensors; andconverting the data into a sequence of images comprising a visual representation of the plurality of particles ...

PHYSICAL STRUCTURE FOR A TUNABLE SENSOR SYSTEM FOR PARTICLE DETECTION

A sensor for detecting particles is presented comprises a silicon wafer substrate and a charge detection layer mounted on the silicon wafer substrate, wherein the charge detection layer comprises a plurality of discrete pixel sensors. The sensor further comprises a converter material, wherein the converter material is operable to interact with a first type of particle to generate a reaction, wherein the reaction produces charged particles, wherein the charge detection layer is configured to detect the charged particles produced by the reaction. Further, the sensor comprises a substrate layer operable to filter a second type of particle, wherein the converter material is coated on an underside of the substrate layer such that the converter material faces the charge detection layer and an air gap is formed between the converter material and the charge detection layer. 1. A sensor for detecting particles , said sensor comprising:a silicon wafer substrate;a charge detection layer disposed on the silicon wafer substrate, wherein the charge detection layer comprises a plurality of discrete pixel sensors;a converter material operable to interact with particles of a first type to generate a reaction, wherein the reaction produces charged particles, wherein the charge detection layer is configured to detect charged particles produced by the reaction, and wherein the charge detection layer is configured to generate a readable electrical signal with information regarding the charged particles detected; anda substrate layer operable to filter particles of a second type, wherein the converter material is coated on an underside of the substrate layer wherein the converter material faces the charge detection layer and an air gap is formed between the converter material and the charge detection layer.2. The sensor of claim 1 , wherein the particles of the first type are neutrons claim 1 , and wherein the neutrons interact with the converter material to produce charged particles ...

COMPACT SOLID-STATE NEUTRON DETECTOR

The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers. 1. A solid-state neutron detector device comprising:a layered structure, having the following layers interposed relative to one another as follows:a first contact;a capping layer;a neutron absorption layer comprising a plurality of interdigitated layers of at least two distinct materials;a graded layer;a substrate further comprising a top substrate layer; anda second contact.2. The device of claim 1 , wherein the top substrate layer is comprised of gallium nitride.3. The device of claim 1 , wherein the graded layer reduces material structure defects associated with lattice mismatch between the top substrate layer and the neutron absorption layer.4. The device of claim 1 , wherein the graded layer comprises gallium nitride claim 1 , indium gallium nitride claim 1 , indium nitride claim 1 , or a combination thereof.5. The device of claim 1 , wherein the plurality of interdigitated layers comprises a first material layer comprising lithium nitride claim 1 , boron nitride claim 1 , gadolinium nitride claim 1 , or a combination thereof and a second material layer comprising indium nitride or other materials with closely matched lattice constants claim 1 , wherein the first and second material layers have a lattice mismatch of no greater than about 0.4%.6. The device of claim 5 , wherein the total thickness of the first material layer is between about 6 μm to about 12 μm.7. The device of claim 1 , wherein the capping layer comprises zirconium nitride claim 1 , titanium nitride or other materials which prevent oxidation of the neutron absorption layer.8. The device of claim 1 , wherein the second contact is composed of a metal or combination of metals making it Ohmic to the top substrate layer.9. The ...

INDUCTIVE RADIATION DETECTOR

A radiation detector includes a block of a material capable of interacting with ionizing radiation to produce charge carriers, an inductor positioned adjacent to the block and having an inductance that depends on a number of the charge carriers in the block, and a sensing circuit coupled to sense a change in the inductance and detect the ionizing radiation base on the change. The sensing circuit may particularly contain an RF synthesizer that drives the inductance, e.g., an LC circuit containing the inductance, and an analyzer that detects changes in the response of the inductance.

AN OPTOELECTRONIC NEUTRON DETECTOR

An optoelectronic neutron detector and method for detecting nuclear material having a neutron capture and scatter medium receiving neutrons and producing secondary charged particles, a photodetector detecting emitted light from the secondary charged particles and outputting a detector signal, and a controller receiving the detector signal and providing an alert or quantitative indication of detected nuclear material in response to the detector signal. 1. An optoelectronic neutron detector for detecting nuclear material , said detector comprising:a neutron capture and scatter medium receiving neutrons and producing secondary charged particles;a photodetector detecting emitted light from said secondary charged particles and outputting a detector signal; anda controller receiving said detector signal and providing an alert or quantitative indication of detected nuclear material in response to said detector signal.2. The detector according to wherein said secondary charged particles are energetic electrons (beta-radiation).3. The detector according to wherein said secondary charged particles are energetic alpha particles.4. The detector according to wherein said neutron capture and scatter medium comprises boron-loaded glass.5. The detector according to wherein said neutron capture and scatter medium comprises borosilicate glass.6. The detector according to wherein said borosilicate glass is formed in the shape of a plate claim 5 , a rod claim 5 , or a cube.7. The detector according to wherein said neutron capture and scatter medium comprises boron-loaded lithium silicate glass.8. The detector according to wherein said neutron capture and scatter medium comprises glass enriched with Li-6 isotope9. The detector according to wherein said neutron capture and scatter medium comprises glass enriched with boric oxide.10. The detector according to wherein said emitted light is caused by fluorescence.11. The detector according to wherein said emitted light is caused by the { ...

PARTICLE DETECTOR AND METHOD OF DETECTING PARTICLES

A particle detector having a support member. A front electrode layer is disposed over the support member. A semiconductor junction having at least an n-type layer and at least a p-type layer is disposed over the front electrode layer. A back electrode layer is disposed over the semiconductor junction. The back electrode layer has a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction. 1. A particle detector , comprising:a support member;a front electrode layer disposed over the support member;a semiconductor junction having at least an n-type layer and at least a p-type layer disposed over the front electrode layer; anda back electrode layer disposed over the semiconductor junction having a thickness which is selected to permit particles having energies in the range from about 0.5 MeV to about 5 MeV to enter the semiconductor junction.2. The particle detector of claim 1 , wherein the support member comprises glass claim 1 , a polymer or a metal and has a thickness from 25 microns to 3000 microns.3. The particle detector of claim 1 , wherein the front electrode layer has a sheet resistance between 5 and 100 ohm/square and comprises at least one of ZnO:Al (AZO) claim 1 , SnO:F (FTO) claim 1 , InO:Sn (ITO) claim 1 , ZnS claim 1 , CdO claim 1 , CdCdO claim 1 , and InZrO (IZO).4. The particle detector of claim 1 , further comprising a high resistivity buffer layer having a resistance disposed directly on the front electrode layer or the semiconductor junction.5. The particle detector of claim 1 , wherein the semiconductor junction comprises a heterojunction of polycrystalline layers of CdS and CdTe.6. The particle detector of claim 1 , further comprising an electric field which extends across the semiconductor junction.7. The particle detector of claim 1 , further comprising a neutron activation layer disposed over the back electrode layer claim 1 , wherein the neutron ...

NEUTRON CAPTURE THERAPY SYSTEM AND GAMMA RAY DETECTOR FOR NEUTRON CAPTURE THERAPY

A neutron capture therapy system includes a neutron ray generating unit, an irradiated body placing unit on which a patient (irradiated body) is placed, and a gamma ray detecting unit that detects gamma rays emitted from the patient (irradiated body). The gamma ray detecting unit includes an emission part that emits light or electrons as the gamma rays are incident thereon, an amplification part that amplifies and outputs the light or the electrons emitted from the emission part, a first neutron ray shielding part formed of a substance containing 6-lithium, and a second neutron ray shielding part formed of a light element. The first neutron ray shielding part is provided so as to cover at least a surface opposite to an adjacent surface adjacent to the amplification part, among surfaces of the emission part. 1. A neutron capture therapy system comprising:a neutron ray generating unit that generates neutron rays;an irradiated body placing unit on which an irradiated body irradiated with the neutron rays is placed; anda gamma ray detecting unit that detects gamma rays emitted from the irradiated body by being irradiated with the neutron rays,wherein the gamma ray detecting unit includesan emission part that emits light or electrons as the gamma rays are incident thereon,an amplification part that is provided adjacent to the emission part and amplifies and outputs the light or the electrons emitted from the emission part,a first neutron ray shielding part formed of a substance containing 6-lithium, anda second neutron ray shielding part provided outside the first neutron ray shielding part and formed of a light element, andwherein the first neutron ray shielding part is provided so as to cover at least a surface opposite to an adjacent surface adjacent to the amplification part, among surfaces of the emission part.2. The neutron capture therapy system according to claim 1 ,wherein the gamma ray detecting unit further includes a gamma ray shielding part provided between ...

CERAMIC RADIATION DETECTOR DEVICE AND METHOD

A ceramic lithium indium diselenide or like radiation detector device formed as a pressed material that exhibits scintillation properties substantially identical to a corresponding single crystal growth radiation detector device, exhibiting the intrinsic property of the chemical compound, with an acceptable decrease in light output, but at a markedly lower cost due to the time savings associated with pressing versus single crystal growth. 1. A method for forming a ceramic radiation detector material , comprising:receiving a source material comprising a powder, wherein the source material comprises a chalcopyrite;applying a pressure to the powder for a predetermined period of time;holding the powder at an elevated temperature below the melting temperature of the powder for the predetermined period of time, wherein the elevated temperature is between 100° C. and 400° C.; andannealing a resulting pressed pellet formed from the powder, wherein the pressed pellet comprises a plurality of crystals with different orientations that collectively exhibit a scintillation behavior of a single crystal of the source material.2. The method of claim 1 , wherein the powder is loaded into a die or mould to which the pressure is applied.3. The method of claim 1 , wherein the pressure is between 1500 psi and 4500 psi.4. The method of claim 1 , wherein the pressure is applied to the powder in a vacuum of less than 0.1 atm.5. The method of claim 4 , wherein the pressure and vacuum are held constant while the pressed pellet is allowed to cool to room temperature.6. The method of claim 1 , wherein the pressed pellet is annealed in an inert atmosphere for 6 hours or more at 400° C.7. The method of claim 1 , wherein claim 1 , prior to applying the pressure claim 1 , the powder is first packed into a forming mould and compressed at room temperature to increase the density of the powder to about 80% of the original density.8. The method of claim 1 , wherein the elevated temperature is achieved ...

NEUTRON DETECTOR UNIT AND NEUTRON DETECTOR ARRANGEMENT

The invention relates to a neutron detector unit for neutrons, in particular thermal and cold neutrons, comprising a detector housing (), cathode elements and a plurality of anode elements (), wherein in order to form a volume detector unit the anode elements () and the cathode elements enable a three-dimensional spatial resolution for conversion events, characterised by a converter gas in the detector housing (). According to the invention, in a neutron detector arrangement which includes at least one neutron detector unit the neutron detector unit () or at least one of the neutron detector units () is oriented in such a way that at least some of the anode elements () of the at least one neutron detector unit () extend at least predominantly in a longitudinal orientation parallel or almost parallel to the direction of travel of the neutrons () to be detected. 142-. (canceled)43. A neutron detector unit for thermal and cold neutrons , comprising{'b': 7', '17', '27, 'a detector housing (, , ),'}cathode elements,{'b': 5', '15', '25, 'a plurality of wire-shaped anode elements (, , ), and'}{'b': 7', '17', '27, 'a converter gas in said detector housing (, , ),'}{'b': 7', '17', '27', '5', '15', '25', '5', '15', '25, 'wherein said neutron detector unit is a volume detector unit, in which a plurality of detector readout cells distributed three-dimensionally in the detector housing (, , ) are formed by at least some of said anode elements (, , ), or by at least some of said anode elements (, , ) and at least some of said cathode elements for the purposes of determining the position of conversion events,'}wherein said neutron detector unit is configured for determining the position by coincidence measurement, charge splitting or determining signal propagation times, andwherein the pressure of the converter gas in the detector housing is at or below a normal pressure.44. The neutron detector unit as claimed in claim 43 , wherein said converter gas contains at least one of the ...

RADIATION MONITOR BASED ON WAVELENGTH-DEPENDENT OPTICAL ABSORPTION IN FUSED SILICA OPTICAL FIBERS

A radiation monitor apparatus and method based on wavelength-dependent optical absorption in fused silica optical fibers. The radiation monitor uses the radiation induced optical changes in fused silica optical fibers as a way to quantify and differentiate the large doses of radiation from high energy photons and neutrons as well as providing a method to extend the sensitivity over a large dynamic range of doses from 103 to beyond 106 rads. The radiation monitor enables dynamic monitoring of highly ionizing radiation environments. The radiation monitor reduces sensitivity saturation at high dose levels, provides increased sensitivity over a large dynamic range of doses, and enables differentiation between high energy photon and neutron contributions or poor signal to noise. 1. A method for remotely determining radiation dose caused by neutrons and high energy photons comprising:a photon source, a doped silica optical fiber, and a photon detector,transmitting light from the photon source through the optical fiber to the photon detector;measuring the intensity of the photons on the photon detector; anddetermining the optical attenuation changes to the optical fiber induced by the radiation as a function of time and temperature.2. The method of wherein said photon source comprises a broadband photon source.3. The method of wherein said broadband photon source comprises a diode laser.4. The method of wherein said broadband photon source is selected from the group consisting of ultraviolet photon source claim 2 , visible photon source claim 2 , and infrared photon source.5. The method of wherein the neutrons and high energy photons include gamma-rays and x-ray.6. The method of wherein said photon detector comprises a broadband photon detector.7. The method of wherein said doped silica fiber is selected from the group consisting of single mode fiber and multimode fiber.8. The method of comprising:said photon source outputs monochromatic light including a wavelength; ...

COMBINED NEUTRON AND GAMMA-RAY DETECTOR AND METHOD

A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material bounded by electrodes, and the electrodes include an anode on one side of the semiconductor material and a cathode on the other side of the semiconductor material, includes the following steps: (a) monitoring the electrical signal at each of the anode and the cathode; and (b) comparing the magnitude of the signals at the anode and the cathode, and the transit time difference between the start of the anode signal and the time when the anode signal reaches a maximum, relatively constant value. In the comparing step, predetermined criteria are used to differentiate between gamma-ray events and neutron events. 1. A method for detecting both gamma-ray events and neutron events with a common detector , the detector including a layer of semiconductor material bounded by electrodes , including an anode on one side of the semiconductor material and a cathode on the other side of the semiconductor material , the method comprising the steps of:monitoring the electrical signal at each of the anode and the cathode; andcomparing both the magnitude of the signals at the anode and the cathode, and a transit time difference between a start of the anode signal and a time when the anode signal reaches a relatively constant value, to differentiate between gamma-ray events and neutron events based on predetermined criteria.2. A method as set forth in claim 1 , where the comparing step includes using the magnitude of the cathode signal to measure the depth of the gamma-ray event or of the neutron event in the semiconductor material.3. A method as set forth in claim 1 , where the comparing step includes comparing the magnitude of the signal at the anode when it reaches a relatively constant value to a predetermined value.4. A method as set forth in claim 1 , where the comparing step includes calculating a signal amplitude ratio of the ...

NEUTRON IMAGING SYSTEM HAVING NEUTRON SHIELD

A neutron imaging system includes a neutron generator, a flight tube, a stage, a neutron imaging module, and a neutron shield. The neutron generator is configured to provide neutrons. The flight tube has an input opening, an output opening, and a flight tube wall extending from the input opening to the output opening. The flight tube is positioned relative to the neutron generator to enable neutrons from the neutron generator to enter the flight tube through the input opening and exit the flight tube through the output opening. The stage is configured to support a sample object at a position to receive neutrons that pass through the entire length of the flight tube and then pass through the output opening of the flight tube. The neutron imaging module has a neutron-sensitive component that is sensitive to neutrons and configured to receive neutrons that pass through the sample object and generate neutron detection signals that can be used to generate an image or video of the sample object. The neutron shield surrounds at least a portion of the flight tube and at least a portion of the neutron imaging module to block at least a portion of stray neutrons that travel toward the neutron-sensitive component of the neutron imaging module, in which the stray neutrons do not enter the flight tube through the input opening of the flight tube. 1. A neutron imaging system comprising:a neutron generator that is configured to produce neutrons from a nuclear fusion reaction;a shielded flight tube that has an input opening, an output opening, a flight tube wall extending from the input opening to the output opening, and a flight tube shield surrounding the flight tube wall, in which the flight tube is positioned relative to the neutron generator to enable neutrons from the neutron generator to enter the flight tube through the input opening and exit the flight tube through the output opening, and the flight tube shield is configured to substantially block neutrons outside of the ...

Measurement technique utilizing novel radiation detectors in and near pulsed neutron generator tubes for well logging applications using solid state materials

An apparatus for estimating a property of an earth formation includes a pulsed neutron generator configured to emit a pulse of neutrons, a formation radiation detector configured to detect radiation emitted from the formation due to interactions with the pulse of neutrons, and a neutron generator radiation detector having a crystal structure and configured to detect a radiation particle emitted from the pulsed neutron generator and to provide a location within the neutron radiation detector at which the particle was detected. The crystal structure includes a plurality of detection cells, each detection cell having at least two electrically conducting columns with an applied potential difference such that electrons generated in the crystal structure by interaction with the radiation particle are collected by at least one of the electrically conducting columns to provide detection locations. A processor estimates the property using the detected formation radiation and the detection locations.

DIFFERENTIAL NEUTRON SPECTRUM GENERATOR AND RELATED METHODS AND SYSTEMS

A neutron spectrum generator is disclosed herein including a neutron source, a scatterer positioned in a direct path between the neutron source and a neutron detector, and a material shell configured to have at least one non-uniform characteristic selected from the group consisting of a material, a thickness, a length, an angle, a layer, and combinations thereof to generate a specific spectrum at the neutron detector that is different than the spectrum of the neutron source. A related method includes measuring a first response generated by a first material shell of a neutron spectrum generator interacting with a neutron source, replacing the first material shell with a second material shell, measuring a second response generated by a second material shell of a neutron spectrum generator interacting with the neutron source, and determining a total fission response by determining a difference between the first response and the second response. 1. A neutron spectrum generator , comprising:a neutron source;a scatterer positioned in a direct path between the neutron source and a neutron detector; andat least one material shell positioned proximate the neutron source, and configured with at least one non-uniform characteristic selected from the group consisting of a material, a thickness, a length, an angle, a layer, and combinations thereof to generate a specific spectrum responsive to interacting with neutrons that is different than a spectrum of the neutron source.2. The neutron spectrum generator of claim 1 , wherein the at least one material shell is a cylindrical shape.3. The neutron spectrum generator of claim 1 , wherein the at least one material shell is a hemispheric shape.4. The neutron spectrum generator of claim 1 , wherein the at least one material shell is a shape symmetric about its axis claim 1 , wherein the axis is a vector extending from the neutron source through the scatterer to the neutron detector.5. The neutron spectrum generator of claim 1 , ...

CHARGED PARTICLE DETECTOR

A charged particle detector is provided. The charged particle detector includes a flexible semiconductor wafer, the semiconductor wafer being doped to form a p-n junction, and an amplifier coupled to the semiconductor wafer and configured to amplify a current or voltage across the p-n junction. 1. A charged particle detector comprising:a flexible semiconductor wafer, the semiconductor wafer being doped to form a p-n junction;an amplifier coupled to the semiconductor wafer and configured to amplify a current or voltage across the p-n junction.2. The charged particle detector according to claim 1 , wherein the flexible semiconductor wafer is mounted so as to provide a curved alpha particle detection surface.3. The charged particle detector according to claim 2 , wherein the flexible semiconductor wafer is mounted to a pipe inspection gauge.4. The charged particle detector according to claim 2 , wherein the flexible semiconductor wafer is mounted on an inner surface of a pipe.5. The charged particle detector according to claim 1 , wherein the semiconductor wafer is a silicon wafer with a thickness of between 20 and 70 microns.6. The charged particle detector according to any claim 1 , and comprising a layer of aluminium on each surface of the flexible semiconductor wafer claim 1 , each layer of aluminium being of a thickness sufficient to exclude optical photons claim 1 , and which is transparent to alpha particles.7. The charged particle detector according to claim 6 , wherein each aluminium layer is 200 nm thick.8. The charged particle detector according to claim 6 , wherein the amplifier is coupled to the semiconductor wafer via the aluminium layers.9. The charged particle detector according to claim 8 , wherein at least one of the aluminium layers is subdivided into a plurality of pixels claim 8 , each pixel being coupled to a different amplifier.10. The charged particle detector according to claim 1 , wherein the flexible semiconductor wafer has a minimum radius ...

NEUTRON DETECTOR USING PROPORTIONAL COUNTERS

A neutron detector module compriging a distribution of proportional counters positioned in in a defined array. Each of the proportional counters includes a supply of a neutron sensitive gas for reacting with neutrons, and this reaction generates ionizing reaction products. The proportional counters include a multitude of tubes, and each of the tubes has a diameter between 0.50 inch and 1.00 inch. The neutron detector module comprises further a multitude of electrical conductors; and each of the conductors is positioned in one of the proportional counters, and the ionizing reaction products generate electric current pulses in the electrical conductors. 1. A neutron detector module , comprising:a container;a distribution of proportional counters positioned in a defined array in said container, each of the proportional counters including a supply of a neutron sensitive gas for reacting with neutrons, said reacting generating ionizing reaction products, and wherein the proportional counters include a multitude of tubes, each of the tubes having a diameter between 0.50 inch and 1.00 inch; anda multitude of electrical conductors, each of the conductors extending into one of the proportional counters, wherein said ionizing reaction products generate electric current pulses in the electrical conductors.2. The neutron detector module according to claim 1 , wherein:in said defined array, the proportional counters are positioned in a plurality of parallel rows; centers of the parallel rows are spaced apart between about 0.834 and 1.0 inch; and within each of the rows, centers of the proportional counters are spaced apart between about 0.896 and 1.063 inches.3. The neutron detector module to claim 1 , wherein the neutron sensitive gas is BF claim 1 , and the mass of the BFgas in each of the proportional counters is equal to or less than one gram.4. The neutron detector module according to claim 3 , wherein the pressure in each of the proportional counters is equal to or less ...

CAPACITANCE REDUCTION FOR PILLAR STRUCTURED DEVICES

In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer. 1. An apparatus , comprising:a first layer including an n+ dopant or a p+ dopant;an intrinsic layer grown or deposited above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, wherein cavity regions are defined between the pillars;a second layer deposited on a periphery of the pillars thereby forming coated pillars, wherein the second layer is substantially absent on the planar portion of the intrinsic layer between the coated pillars, wherein the second layer includes a n+ dopant when the first layer includes a p+ dopant, wherein the second layer includes a p+ dopant when the first layer includes a n+ dopant; anda neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer.2. The apparatus as recited in claim 1 , wherein the apparatus has a capacitance of less than about 0.2 nF/cm.3. The apparatus as recited in claim 1 , wherein the pillars have an average aspect ratio of about 25:1.4. The apparatus as recited in claim 1 , wherein each pillar has a ...

LIQUID-SEMICONDUCTOR NEUTRON DETECTOR

The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof. 1. Liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure constituted by a solid phase and a liquid phase where:the solid phase comprises a substrate of a semiconductor material characterised by having a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, andthe liquid phase is contained in said grooves and characterised by comprising at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material.2. Detector according to claim 1 , wherein the isotope is selected from a group consisting of Li claim 1 , B claim 1 , Cd claim 1 , Gd claim 1 , Gd; He claim 1 , Xe claim 1 , U claim 1 , U claim 1 , Th claim 1 , Na claim 1 , Fe claim 1 , Zr claim 1 , In claim 1 , Au claim 1 , Hf claim 1 , Co claim 1 , Sm claim 1 , Ti claim 1 , Dy claim 1 , Er claim 1 , Eu claim 1 , Mo and Yb.3. Detector according to claim 1 , wherein the converter compound is selected from a group consisting of BC claim 1 , BF claim 1 , LiF claim 1 , HBO claim 1 , MoB claim 1 , B(OH) claim 1 , Na[BH] claim 1 , CBHand BH.4. Detector according to claim 1 ...

INDUCTIVE RADIATION DETECTOR

A radiation detector includes a block of a material capable of interacting with ionizing radiation to produce charge carriers, an inductor positioned adjacent to the block and having an inductance that depends on a number of the charge carriers in the block, and a sensing circuit coupled to sense a change in the inductance and detect the ionizing radiation base on the change. The sensing circuit may particularly contain an RF synthesizer that drives the inductance, e.g., an LC circuit containing the inductance, and an analyzer that detects changes in the response of the inductance. 1. A radiation detector comprising:a block of a material capable of interacting with radiation to produce charge carriers;an inductor positioned adjacent to the block and having an inductance that depends on a number of the charge carriers in the block; anda circuit coupled to sense a change in the inductance and detect the radiation based on the change.2. The radiation detector of claim 1 , wherein the material is an insulator or a semiconductor.3. The radiation detector of claim 1 , further comprising an electromagnetic shield around the inductor and isolating the inductor from external electromagnetic RF interference.4. The radiation detector of claim 3 , wherein the electromagnetic shield forms an RF cavity containing the inductor.5. The radiation detector of claim 1 , wherein the inductor comprises a helical coil that surrounds the block.6. The radiation detector of claim 1 , wherein the inductor comprises a birdcage coil.7. The radiation detector of claim 1 , wherein the inductor comprises a spiral coil adjacent to a flat surface of the block.8. The radiation detector of claim 1 , wherein the radiation is selected from a group consisting of X-rays claim 1 , gamma-rays claim 1 , or nuclear particles including neutrons.9. The radiation detector of claim 1 , wherein the material of the block is selected from a group consisting of a semiconductor containing B claim 1 , Cadmium Zinc ...

Method for coating boron

The present application relates to a method for coating boron, to a boron-containing resin solution, to a boron-coated thermal neutron converter obtained by the method for coating boron, and further to a thermal neutron detector comprising the boron-coated thermal neutron converter. The method for coating boron as provided in the application is applicable for various substrates and has small restrictions on substrate shapes, particularly for substrates having complex surface structures and high aspect ratios.

NEUTRON IMAGING SYSTEMS UTILIZING LITHIUM-CONTAINING SEMICONDUCTOR CRYSTALS

A neutron imaging system, including: a plurality of Li-III-VIsemiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and electronics operable for detecting and a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons. Each of the crystals is formed by: melting the Group III element; adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; and adding the Group VI element to the single phase Li-III compound and heating. Optionally, each of the crystals is also formed by doping with a Group IV element activator. 1. A neutron imaging system , comprising:{'sub': '2', 'a plurality of Li-III-VIsemiconductor crystals arranged in an array, wherein III represents a Group III element and VI represents a Group VI element; and'}electronics operable for detecting a charge in each of the plurality of crystals in the presence of neutrons and for imaging the neutrons.2. The neutron imaging system of claim 1 , wherein the Li comprises Li and the neutrons comprise thermal neutrons.3. The neutron imaging system of claim 1 , wherein the Li comprises Li and the neutrons comprise high energy neutrons.4. The neutron imaging system of claim 1 , wherein the Group III element comprises one of Ga and In.5. The neutron imaging system of claim 1 , wherein the Group VI element comprises one of S claim 1 , Se claim 1 , and Te.6. The neutron imaging system of claim 1 , wherein each of the crystals is formed by:melting the Group III element;adding the Li to the melted Group III element at a rate that allows the Li and Group III element to react, thereby providing a single phase Li-III compound; andadding the Group VI element to the single phase Li-III compound and heating.7. The neutron imaging system of claim 6 , wherein the Group III element is melted at a temperature of between about ...

CROSS-CORRELATED GAMMA RAY AND NEUTRON DETECTOR

A radiation detector is provided. The radiation detector includes an outer casing, at least one first detector disposed within said outer casing, the at least one first detector configured to primarily detect gamma ray radiation, at least one second detector disposed within the outer casing, the at least one second detector configured to primarily detect neutron radiation, and a computing device disposed within the outer casing and communicatively coupled to the at least one first detector and the at least one second detector. The computing device is configured to receive first data from the at least one first detector, receive second data from the at least one second detector, determine a number of neutrons and gamma rays detected based on the first and second data, and determine a detected energy spectrum based on the first and second data. 1. A radiation detector comprising:an outer casing;at least one first detector disposed within said outer casing, said at least one first detector configured to primarily detect gamma ray radiation;at least one second detector disposed within said outer casing, said at least one second detector configured to primarily detect neutron radiation; and receive first data from said at least one first detector;', 'receive second data from said at least one second detector;', 'determine a number of neutrons and gamma rays detected based on the first and second data; and', 'determine a detected energy spectrum based on the first and second data., 'a computing device disposed within said outer casing and communicatively coupled to said at least one first detector and said at least one second detector, said computing device configured to2. A radiation detector in accordance with claim 1 , wherein said at least one first detector is a CZT detector.3. A radiation detector in accordance with claim 1 , wherein said at least one second detector is a CLYC detector.4. A radiation detector in accordance with claim 1 , wherein said outer casing is ...

METHOD FOR CARRYING OUT A NEUTRON DETECTOR AND NEUTRON DETECTOR

A method for producing a device for detecting flux of neutrons with parameters in predetermined ranges, including: one phase of determining parameters, including: simulating penetration of a flux of incident neutrons with parameters in the predetermined ranges through a modelled stack including in succession and in order at least: one first electrode; one substrate including: a first layer; and a second layer; and one second electrode; and simulating at least one defect peak created in the first layer by vacancies and/or ionization of the particles generated by collisions between neutrons of the flux of incident neutrons and atoms of the second dopant species; and identifying depth of the defect peak closest the interface between the first and second layers of the modelled stack. 125-. (canceled)26. A method for realizing a device for detecting a neutron flux having characteristics within predetermined ranges , comprising:a phase of determining parameters of the detector, the phase comprising:simulating penetration of a flux of incident neutrons having characteristics within the predetermined ranges through a modeled stack comprising successively and in order:a first electrode; a first doped layer comprising at least one first dopant species such that the first layer is an n-doped layer or a p-doped layer, with the first layer being formed by the substrate;', 'a second doped layer comprising at least one second dopant species such that the second layer is the other among an n-doped layer or a p-doped layer to form, at an interface between the first and second layers, a p-n junction and to form in the first layer and starting from the interface between the first and second layers, a space charge region; with the second layer being formed by implantation of the second dopant species in the substrate; with the second dopant species being taken from neutron-converting materials such that the second layer forms a neutron conversion layer;, 'a substrate comprisinga second ...

NEUTRON-DETECTING APPARATUSES AND METHODS OF FABRICATION

Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure. 1. A method comprising: providing a substrate comprising a plurality of cavities extending into the substrate from a surface thereof;', 'forming a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities therein;', 'providing a neutron-responsive material within the plurality of cavities, the neutron-responsive material being responsive to neutrons absorbed thereby for releasing ionization radiation reaction products, wherein the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure;', 'wherein the p-in junction within the substrate is a continuous p-n junction, the continuous p-n junction being disposed, at least in part, parallel to the surface of the substrate from which the plurality of cavities extend into the substrate, as well as in spaced opposing relation to the inner cavity walls of the substrate; and', 'wherein the continuous p-n junction is spaced from the surface of the substrate a greater distance than the continuous p-n junction is spaced in opposing relation to the ...

CHARGE GENERATING DEVICES AND METHODS OF MAKING AND USE THEREOF

Provided herein are charge generating devices and methods of making and use thereof. The charge generating devices comprise a substrate having a top surface; a plurality of spaced-apart three-dimensional elements disposed on the top surface of the substrate; and a plurality of cavities formed by the plurality of spaced-apart three-dimensional elements, the plurality of cavities being the area between the plurality of spaced-apart three-dimensional elements. The charge generating devices can further comprise a radioactive layer disposed on at least a portion of the plurality of spaced-apart three-dimensional elements and the top surface such that the plurality of cavities and the top surface are substantially coated by the radioactive layer. In some examples, the charge generating devices can comprise a radiation material and/or a scintillating material disposed within at least a portion of the plurality of cavities. 1. A charge generating device comprising:a substrate having a top surface and a bottom surface;a plurality of spaced-apart three-dimensional elements disposed on the top surface of the substrate;a plurality of cavities formed by the plurality of spaced-apart three-dimensional elements, the plurality of cavities being the area between the plurality of spaced-apart three-dimensional elements;a radioactive layer disposed on at least a portion of the plurality of spaced-apart three-dimensional elements and the top surface such that the plurality of cavities and the top surface are substantially coated by the radioactive layer, thereby forming a plurality of coated cavities;a first conducting layer disposed above the plurality of spaced-apart three-dimensional elements, wherein the first conducting layer is in electric contact with at least a portion of the plurality of spaced-apart three-dimensional elements;a second conducting layer disposed below the substrate, wherein the second conducting layer is in electric contact with the bottom surface of the ...

Nuclear reactor system, transmitter device therefor, and associated method of measuring environmental conditions

A transmitter device includes a neutron detector structured to detect neutron flux, a capacitor electrically connected in parallel with the neutron detector, a gas discharge tube having an input end and an output end, and an antenna electrically connected to the output end. The input end is electrically connected with the capacitor. The antenna is structured to emit a signal corresponding to the neutron flux.

Radiation detector including field effect transistor in resonant cavity nanostructure

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

Neutron gamma dosimeter comprises at least three channels, for detecting slow neutrons, fast neutrons and gamma radiation.

A neutron gamma dosimeter for detecting thermal neutrons, fast neutrons and gamma radiation using semiconductor detectors, comprises at least three channels. One channel has a detector for gamma radiation (1A), and the other two channels have a detector for thermal neutrons (1B) and fast neutrons (1C). The channel for gamma radiation detection has an adjustable barrier potential which enables sensitivity to be adjusted.

Dosimeter for measuring neutron and gamma radiation

Neutron detector

A device for detecting neutrons includes at least one common module, where a number of solid state sensors are assembled. The sensors are configured in the module side by side and/or stacked in a layered structure. At least one of the sensors includes neutron reactive material as a neutron converter for interacting with neutrons incident thereon to be detected and to release ionizing radiation reaction products responsive to interactions with the incident neutrons. The neutron converters are coupled with corresponding semiconductor elements so that the semiconductor elements interact with the ionizing radiation reaction products for providing electrical charges in proportion to the energy of the ionizing radiation reaction products. The semiconductor elements are configured with electrodes for providing charge collection areas for collecting the electrical charges and to provide electrically readable signals proportional to the collected electrical charges.

Apparatus and method for radiation detection

A radiation detection system, comprising first (810) and second (820) semiconductor detectors each arranged to output respective detection signals wherein the first and second detectors (810, 820) are separated by a neutron reactive material(830), wherein the neutron reactive material (830)is arranged, in response to neutron capture, to emit at least two charged reaction products in generally opposing directions such that a first reaction product is detected by the first detector (810) and a second reaction product is detected by the second detector(820), a control unit coupled to the detector, the control unit (110) being arranged to apply a bias voltage to the first and second detectors (810, 820) and to receive the detection signals output from the first and second detectors(810, 820), wherein the control unit (110) is arranged to apply a first bias voltage to the first and second detectors (810, 820) and to store information indicative of detection signals received from the first and second detectors (810, 820) at the first bias voltage, to apply a second bias voltage to the first and second detectors (810, 820) and to store information indicative of detection signals at the second bias voltage, and wherein the control unit (110) is arranged to determine whether detection signals corresponding to detection of the first and second reaction products are received within a predetermined period.

Method for determining neutron spectra and device for carrying out said method

Method and device for determining a person's dose in mixed neutron/photon fields

Nuclear radiation detection device with a detector formed by a diamond plate

Energy conversion device with support member having pore channels

Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel length. Material layers that may include energy conversion materials and conductive materials are coaxially disposed within the pore channels to form material rods having a relatively small cross-section and a relatively long length. By varying the structure of the materials in the pore channels, various energy devices can be fabricated, such as photovoltaic (PV) devices, radiation detectors, capacitors, batteries and the like.

Semiconductor radiation detector

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Omni-directional solid-state thermal neutron detector

A directional neutron detecting apparatus includes first and second neutron detectors. Each neutron detector includes a thin planar sheet of neutron-reactive material; a first ohmic electrode operably coupled to one side of the planar sheet of neutron-reactive material; a second ohmic electrode operably coupled to a second side of the planar sheet of neutron-reactive material; a voltage source operably coupled to the first and second ohmic electrodes; and an electrical current detector operably coupled in series between the first ohmic electrode and the voltage source. The first and second neutron detectors are arranged so that their planar neutron-reactive sheets are substantially parallel, opposing and are spaced from each other. Multiple directional neutron detecting apparatuses may be arranged mutually orthogonally to thereby provide omni-directional neutron detection.

White-light neutron imaging method and system for nuclide identification

一种用于核素识别的白光中子成像系统及方法，包括能够发射出白光中子束的白光中子源、转换屏和伽玛射线探测器，使用纯B‑10作为转换屏，B‑10具有很大的中子吸收截面，且没有共振峰结构，对全共振能区中子都具有较高的探测效率，吸收一个中子后会放出一个约480keV伽玛射线，也就是说，以伽玛射线为中子被捕获的信号，再利用对伽玛射线敏感的伽玛射线探测器探测该能量的射线，因此可以实现全能区的中子成像功能。从而，将待测样品放置在白光中子源和转换屏之间，可以探测到透过样品之后的白光中子的位置信息和能量信息，由此，利用白光中子束的宽谱特点，结合B‑10转换屏和伽玛射线探测器，能够高效、低成本的实现核素识别以及宽谱中子成像。

DEVICE FOR DETECTION OF EXPLOSIVE EXAMPLES

Semiconductor neutron detector for neutron dosimeter, has converter material disposed to fill cylindrical cavities provided in volume of semi-conductor substrate, and space charge area provided in substrate part to enclose material

The detector has a converter material (24) that permits to convert incident neutrons into electrically detectable particles. The material is disposed in a manner to fill cylindrical cavities that are provided in a volume of a semi-conductor substrate (21). A space charge area (25) is provided in a part of the substrate adjacent to the filled cavities so as to enclose the converter material. An independent claim is also included for a neutron dosimeter comprising a semi-conductor neutron detector.

Device for measuring a thermal neutron flux

Advanced neutron detector

A neutron detector for use in high energy flux environments. Multiple stacked arrays of biased Si PIN diodes are provided with adjustable lower and upper energy detection thresholds. Shielding along the sides and back of the detector limits the sensing to along the forward line of sight of the detector, and a short time gate limits sensing of an individual cell to a single event.