Process for making multi-gate transistors and resulting structures

23-07-2019 дата публикации

Номер:

US10361094B2

Автор: Huicheng Chang, Jing-Huei HUANG, Liang-Yin Chen, Lun-Kuang Tan, Su-Hao LIU, Tsan-Chun Wang

Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/30 H01L21/306 H01L21/3060 H01L21/30604 H01L21/31 H01L21/311 H01L21/3110 H01L21/31105 H01L21/3115 H01L21/31155 H01L21/8 H01L21/82 H01L21/823 H01L21/8234 H01L21/82343 H01L21/823431 H01L21/8238 H01L21/82382 H01L21/823821 H01L27 H01L27/H01L27/0 H01L27/08 H01L27/088 H01L27/0886 H01L27/09 H01L27/092 H01L27/0924 H01L29 H01L29/H01L29/4 H01L29/41 H01L29/417 H01L29/4179 H01L29/41791 H01L29/42 H01L29/423 H01L29/4231 H01L29/42312 H01L29/6 H01L29/66 H01L29/664 H01L29/6647 H01L29/66477 H01L29/665 H01L29/6654 H01L29/66545 H01L29/667 H01L29/6679 H01L29/66795 H01L29/7 H01L29/78 H01L29/783 H01L29/7831 H01L29/785 H01L29/7853 H01L29/7855

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/31 H01L21/311 H01L21/3115 H01L21/31155 H01L29 H01L29/H01L29/1 H01L29/16 H01L29/165 H01L29/6 H01L29/66 H01L29/665 H01L29/6654 H01L29/66545

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