GRAPHENE SHEET, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING SAME

Hereinafter, examples of the present invention implementing detailed the on-sensors other. But, this is by way of example number so that when, the range of the present invention is defined by the present invention refers to one category number 802.11a packets not [...] claimed only disclosed.

As aforementioned, the monocrystalline silicon carbide (SiC) subjecting at least 1300 °C (ultrahigh vacuum, UHV) conditions by heat-treating a substrate, on the surface of the growing epitaxial [...] (epitaxial) method is known as disclosed.

This, when heat-treating the silicon carbide substrate, at a surface thereof and thermal decomposition (thermal decomposition) reaction has taken place, and sublimated silicon, carbon remaining rearranged on one face of the substrate, said epitaxial (epitaxial) growth to yes pin utilizing the principles are disclosed.

But, when by the method, for obtaining high-quality yes pin sheet 1500 to 1600 °C temperatures are disclosed. I.e., is electrically connected to a low temperature heat treatment is less than 1300 °C, and there is obtained a larger seoul and inchon deficiency (epitaxial) growth will be difficult to door number to the second epitaxial [...] efined aforementioned deficiencies.

When such door number for, when heat-treating the silicon carbide substrate, argon (Ar) used for lowering and raising the pressure sublimation rate of silicon epitaxial (epitaxial) so as to detect the number [...] quality into the correction.

However, in this case 1650 °C requires higher temperature or more, high-quality epitaxial (epitaxial) is electrically connected to a low temperature heat treatment is still less than 1300 °C obtained [...] does not limit when it is judged that known.

Hereinafter embodiments of the present invention of implementing, by measuring the number of resist rust supporting respective Raman spectrum [...] yes pin sheet which, low temperature by heat treatment method and a same number bath a number [...], in addition electronic device including such yes pin sheet number [...] substrate.

Yes pin Sheet

First, in one implementation of the present invention, 1 to 20 layer (graphene) yes pin which, measured Raman spectrum, 2680 cm^-1 2D band peak exceeds a position unit which, 1596 cm^-1 G band position of less than a peak of electrical signals, 2D band/G band strength ratio is 0. 4 the apparatus being greater than, yes pin sheet number [...] substrate.

Specifically, said yes pin sheet, silicon carbide substrate covered with the metal by heat-treating in (capping), between said metal plate and said silicon carbide substrate grown epitaxial (epitaxial) may be disclosed.

The detailed description is to carry it does but number bath method, silicon carbide substrate covered with a heat treatment in the final obtained yes pin sheet metal (capping), a silicon carbide substrate is heat-treated metal (capping) obtained at state when applied, when when the same (low temperature of less than in particular 1300 °C) heat treatment, and there is obtained a deficiency comprising seoul and inchon [...] can be erased.

More specifically, in one embodiment of the present invention according to yes pin sheet, 1 to 20 comprising a layer (graphene) yes pin, as aforementioned, the Raman spectrum of resist rust supporting respective measurement are disclosed.

Hereinafter, according to one implementation of the present invention detailed yes pin sheet as follows.

Generally, yes pin measured Raman spectrum of grown on silicon carbide substrate, the thickness of the sheeting 2D band peak location yes pin number information [...] substrate.

In this regard carry it does but, when the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state, measured Raman spectrum, 2680 cm^-1 The position of a peak of a 2D band which appears hereinafter, thinner sheet yes pin grown therefrom information can be checked.

And while, according to one implementation of the present invention yes pin sheet 2680 cm^-1 A position beyond, specifically 2680 cm^-1 2720 cm greater than^-1 2D band position of less than a peak of electrical signals, the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state not to induce, grown yes pin sheet is a relatively thick return electrode substrate.

In addition generally, grown on silicon carbide substrate yes pin sheet measured Raman spectrum, G band peak location due to effects of the silicon carbide substrate grown yes pin number information of compressive strain (compressive strain) degree [...] substrate.

In this regard carry it does but, when the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state, measured Raman spectrum, 1596 cm^-1 G band than a peak of electrical signals, is performed on the silicon carbide substrate grown yes pin sheet under the influence of a large compressive strain can be know.

And while, according to one implementation of the present invention yes pin sheet, 1596 cm^-1 Less than, specifically 1580 cm^-1 1596 cm greater than^-1 G band position of less than a peak of electrical signals, the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state not to induce, grown under the influence of relatively thick silicon carbide substrate yes pin sheet compression deformation in a return electrode substrate.

As well as generally, yes pin sheet measured Raman spectrum, the degree of particle diameter yes pin 2D band/G band strength ratio number information deficiency [...] substrate. In this regard carry it does but, when the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state, measured Raman spectrum 2D band/G band strength ratio is 0. 4 hereinafter to measured, this deficiency of a large particle diameter is small grown yes pin can be know.

And while, according to one implementation of the present invention yes pin sheet, 2D band/G band strength ratio is 0. 4 exceeds, specifically 1. 25 or more, more specifically 4. 0 measured above, the silicon carbide substrate is covered with a metal plate (capping) not to induce heat-treated state, and there is obtained a big deficiency of the ligaments were grown yes pin with particle diameter.

In addition, measured Raman spectrum generally yes pin sheet, the thickness of the sheeting 2D band peak at the lenslet (FWHM, Full Width at Half Maximum) yes pin number information [...] substrate. In this regard carry it does but, silicon carbide substrate is heat-treated metal (capping) obtained at a state when, measured Raman spectrum, 2D band peak anti-face width 50 cm^-1 Above its electrical signals, this grown thicker sheet yes pin in another substrate.

And while, according to one implementation of the present invention yes pin sheet, 2D band peak anti-face width 30 to 50 cm^-1 May be, metal silicon carbide substrate is heat-treated (capping) obtained at a state not to induce, yes pin grown thin sheet in another substrate.

On the other hand, in this regard carry it does but, when the silicon carbide substrate is covered with a metal sheet (capping) is heat-treated state, measured Raman spectrum, D band/G band strength ratio is 1. 9 or more it has been determined that other.

And while, according to one implementation of the present invention yes pin sheet, 1335 cm^-1 1365 cm greater than^-1 D band appears less than position and, D band/G band strength ratio is 1. 9 less than, specifically 0. 1 hereinafter may be a bar, a silicon carbide substrate is heat-treated metal (capping) obtained at state not to induce, yes pin significantly low degree of deficiency can be know.

On the other hand, said yes pin sheet, a silicon carbide are grown on a substrate, said silicon carbide substrate silicon surface (0001) direction and similar may be having a crystal lattice, said silicon carbide substrate carbon surface (000 - 1) has a crystal lattice can be direction and similar.

Yes pin Number of bath method

In another example implementation of the present invention, silicon carbide (SiC) substrate (capping) covering one aspect of metal, to form a laminate; and said thermally treating the laminate; wherein, said laminate and thermally treating; in, which is covered with said metal plate on one side of said stack to said silicon carbide substrate, a non-epitaxial (epitaxial) grown [...], yes pin number a number of bath method [...] substrate.

, the aforementioned yes pin is finally sheet can be obtained.

More specifically, said laminate heat treated collectively step; is, semiconductor epitaxy growth can be carried out in (Ultra High Vacuum, UHV) conditions.

The, (a) said metal plate is covered with said stack of said silicon carbide substrate (thermal decomposition) reaction has taken place the thermal decomposition in one aspect; (b) ion is generated by said thermal decomposition step; and (c) said sublimation and silicon, said silicon carbide substrate arranged on one side of said metal plate is covered with said carbon re, said yes pin (epitaxial) growing the epitaxial; wherein, said (a), (b), and (c) be a take place simultaneously.

The, said silicon carbide substrate silicon surface (0001) such as direction and like crystal grating to said [...] epitaxial (epitaxial) growth can be. Alternatively, said silicon carbide substrate carbon surface (000 - 1) such as direction and like crystal grating to said [...] epitaxial (epitaxial) grown disapproval.

Just, as prior deficiencies, semiconductor epitaxy growth (Ultra High Vacuum, UHV) conditions, silicon carbide substrate is heat-treated (capping) obtained at the metal state, at a temperature of 1300 °C only [...] epitaxial (epitaxial) growth can be, in particular for obtaining high-quality yes pin sheet more high temperature (1500 to 1600 °C) heat treatment needs to be disclosed.

And while, the method of the present invention in one embodiment according to number tank, silicon carbide substrate covered with the metal by heat-treating in (capping), 1) a low temperature heat treatment process based upon on advantages and, 2) can be obtained final yes pin ensure quality resist rust. 1) specifically, said laminate heat treated collectively step; in, said one side of said metal plate is covered with a silicon carbide substrate (thermal radiation) and radiation heat is transferred, said silicon carbide substrate covering said metal plate in one aspect said heat radiation reflected (mirroring), said laminate stack between said external temperatures than metal and silicon carbide substrate can be temperature increases.

In this regard, in the range of 950 °C hereinafter said laminate in said laminate in a subsequent number 800 °C or more external temperature there can be. I.e., low temperature then reduced, high-quality can be obtained in the aforementioned yes pin sheet are disclosed.

2) in addition, protects each said laminate steps; in, said silicon carbide substrate stack and metallic conductors, said closed and sublimated silicon (confinement), said some of said absorbent (absorb) said closed metal silicon stack can be.

The, silicon carbide substrate is covered with a metal sheet is heat-treated (capping) compared with the state, near-surface silicon atoms in the silicon carbide supply portion increases, and substantial that the slower the sublimation rate of Si, time and the second re-arranged carbon, 1 to 60 minutes can be said laminate in a subsequent thermal processing, and there is obtained a deficiency can be grown to high quality epitaxial (epitaxial) yes pin are disclosed.

To this end, said metal plate is provided, which in the embodiment using the molybdenum plate carry (Mo-a plate), demonstrated that for smooth. Only, as well as molybdenum (Mo), W, Pt, Ni, and Cu metal species selected from 1, 2 of these materials or in addition at least one metal alloy metal, molybdenum plate (Mo-a plate) expressing same result as can be.

Electronic device

In another implementation of the present invention, yes pin sheet including channel layer; both ends of said channel layer in contact with the source electrode and drain electrode; as a gate insulating layer located on said channel layer; and said gate insulation layer located on the gate electrode; and, said channel part with a yes pin sheet, comprising 1 to 20 yes pin layer (graphene), measured Raman spectrum, 2680 cm^-1 2D band peak exceeds a position unit which, 1596 cm^-1 G band position of less than a peak of electrical signals, 2D band/G band strength ratio is 0. 4 greater than the data, an electronic device number [...] substrate.

In one embodiment of the present invention according to the electronic devices can be, obtained by the aforementioned number bath method by applying a final yes pin sheet, can be excellent performance.

Said yes pin sheet number bath method described above are useful as, otherwise known to said electronic device components are generally equal, description and the V-shaped substrate.

Hereinafter, embodiments of the present invention preferred embodiment and according to evaluation are described substrate. In the embodiment of the present invention in the embodiment for the present invention is provided in the embodiment is to however is not limited to one and not the.

In the embodiment 1 and Comparison example 1

First, 4H-a SiC substrate using molybdenum plate (Mo-a plate) and high pressure liquid coolant yes pin sheet number, its structural features is set to analyze.

As pretreatment, 4H-a SiC substrate is, for stand-alone and has at number, HF (49%) after 1 minutes using chemically washed was good for methanol. In addition to molybdenum plate (Mo-a plate) by machining residue number alone, HCl: H₂ O (2:1) to 10 minutes after using one of the flushing away of distilled water washed after, for subjecting (UHV) conditions was heat treated at 500 °C (annealing).

Then, as shown in the variation also 1, molybdenum plate located on surface of n - type C 4H a-SiC(Mo-a plate), n - type substrate surface is covered with the molybdenum plate (Mo-a plate) C 4H a-SiC(capping) state of a silicon wafer is.

For this laminate, subjecting (UHV) conditions, within the range 850 to 950 °C, 10 to 60 minutes was heat. A general vacuum heat treatment process which is at a lower temperature than condition, during a heat treatment temperature infrared pyrometer (IR pyrometer) and thermocouple (thermocouple) been cross check using. The, adjusts the various heat treatment, the results for each case are obtained.

In addition chamber base pressure is 6. 0 * 10^-9 Fluorescence Torr, 60 minutes in 900 °C -4 working pressure during a heat treatment. 6 * 10^-6 Torr was achieved.

After heat treatment, cobalt yes pin out 4H-a SiC substrate either side of a sheet, which is covered with a molybdenum plate (Mo-a plate) that has been obtained in the n - type C (capping) referred to in the embodiment 1 and yes pin sheet, molybdenum plate (Mo-a plate) (UHV) conditions without directly subjecting thermally (capping) that has been obtained in the comparison example 1 yes pin sheet exposed n - type C is combined with a load.

Evaluation example 1

(1) In the embodiment 1 and Comparison example 1 Raman spectrum of evaluation

In the embodiment 1 and comparison example 1 obtained respectively yes pin against the seat, epitaxial yes pin (EG) and whether each structural quality formed to evaluate, using Raman microscope (Alpha 300R, WITec) Raman spectrum were measured.

Measured, laser produced by energy (excitation energy) is -2. 33 eV (532 nm), the laser output includes 3 mW and, laser spot size - 1. 2 micro m is set to.

Figure 2, in the embodiment 1 and comparison example 1 relates to 900 °C heat condition when, as represented in the embodiment 1 according to the result and Spectrum A, represented by the example 1 according to the comparison result Spectrum B are disclosed.

Both in the embodiment 1 and comparison example 1, epitaxial yes pin (EG) feature of the Raman peaks (D, G, 2D) and appearing, epitaxial yes pin (EG) confirmed through the thickness of the can.

1) just in time and to have a point value in both cases, the relative strength of peaks 2D D G peak for peak and that very other are disclosed.

Specifically, in the case of comparison example 1, the peak strength peak-to--1 D G. 9 strong and times, peak-to-peak strength of 2D -0 G. 4 times are in disclosed. In addition D D + G peak in addition able to confirm a peak associated size inhibin receptor.

This results, epitaxial yes pin which is in deficiency (EG), and the particle size small (approximately nm unit) meaning that the bar formed, subjecting relatively at a low temperature epitaxial yes pin (EG) to-searcher selects door number inference can.

And while, in the case of in the embodiment 1, the peak strength peak-to--0 D G. 1 times and in order, peak-to-peak strength of 2D -1 G. 25 times are identified. In addition D + G peaks less so as to have negligible.

In the embodiment 1 from example 1 compared to Raman spectral change [...], molybdenum (Mo-a plate) (capping) state when the plate is covered with heat-treated (EG) deficiency in epitaxial yes pin projections, its particle diameter becomes meaning that the other.

Thus, capping of the molybdenum plate (Mo-a plate) (capping), semiconductor epitaxy growth conditions less than 1300 °C, specifically 900 °C hereinafter (EG) and molecules of epitaxial yes pin enables growth of a transformed, and ensure excellent quality in addition that can be know.

2) as well as, in which portion is another Raman spectral, 2D G peak and peak position of shape are disclosed.

Epitaxially grown yes pin G (EG) is moved and are known to peak blue (blue-a shifted), this substrate epitaxial yes pin (EG) film due to the interaction between residual compressive strain by (residual compressive strain) are disclosed.

In measured Raman spectral, 1 in the embodiment 1 and comparison example each, -1588 cm^-1 And -1596 cm^-1 G to peak is disposed and, they are single layer [...] G mechanical stripping peak (-1580 cm^-1 ) Blue shifted (blue-a shifted) against are disclosed.

However, epitaxial yes pin (EG) are compensated by increasing the thickness of the thick, compressive stress (compressive strain) is relaxed, in this regard G ix. blue movement reducing the peak width. In this regard, in the embodiment 1 of reduced if show a visible bar, comparison example 1 compared to the thick injection layer meaning that the other.

This, in addition supporting 2D peak from its permanent location are disclosed. Specifically, the comparison example 1 peak 2D -2680 cm^-1 Which appears in the vicinity, of hexagonal silicon carbide (Hexagonal a-SiC) is grown on the substrate C (EG) presents an exemplary epitaxial yes pin.

And while, in the embodiment 1 is a peak 2D -2711 cm^-1 Which appears in the vicinity, of graphite -2725 cm bulk^-1 Can be moved toward that of a, is thicker at the mounted meaning that the other.

3) as well, the shape of the peak 2D, yes pin rotatably positioned in the laminated layer according to information (rotational ordering) number [...] substrate.

As shown in fig. 2, in the embodiment 1 is, unlike bulk graphite, one end of which peak 2D symmetrical, single layer [...] lenslet (FWHM, Full Width at Half Maximum) typical value (-24 cm^-1 ) Larger than, 47 cm^-1 Value can be an indirectly-to meet.

This yes pin layer laminated form, form so-called carbon precursor (turbostratic), disordered to a shape close to rotate with respect to each other in another substrate. The fourth rotation C (EG) epitaxial growth on the disordered yes pin appears frequently appears in the other.

Further, in the embodiment 1 of the lenslet from, and variable diameter, its mean particle size growth of epitaxial yes pin can be identifying (EG).

(2) In the embodiment 1 and 2 of SEM Evaluating photograph on

In the embodiment 1 and comparison example 1 against, epitaxial yes pin (EG) (morphology) for observing a surface of wool pawl [le, Hitach Cold FE-a SEM (Scanning electron microscope, SEM) was photographed in using scanning electron microscope.

Specifically, (a) is also 3, comparison example 1 900 °C 4H-a SiC substrate surface is heat-treated condition when revealing the secret key which, prior to this and gate different bar free 4H a-SiC.

In this regard, 4H-a SiC substrate, surface of sleeve only over a part of the atomic layer which, in wool pawl [le large surface in which a part will not induce a change degree can be informed that the limited zone.

And while, also 3 (b) is, in the embodiment 1 850 °C 4H-a SiC substrate surface is heat-treated condition when revealing the secret key are disclosed. (B) the reference also 3, 4H-a SiC substrate is heat-treated (capping) state when the plate is covered with molybdenum (Mo-a plate), heat treated at a relatively low temperature even if rough surface than represents can be know.

This surface roughness, epitaxial yes pin (EG) remaining carbon atoms are formed according to this surface and moves, step bunching attributed to silicon atoms derived by sublimation.

(C) 3 also includes, in the embodiment 1 900 °C 4H-a SiC substrate surface is heat-treated condition when revealing the secret key are disclosed. (C) the reference also 3, step bunching is higher surface temperature (900 °C) in its rear, allowing more extended zone boundary is formed not can be known.

Silicon (Si) atoms at an elevated temperature then proceed with step bunching sublimation occurs soon meaning that the bar, the greater the carbon (C) atoms increases the movement of the surface temperature is raised can be know.

(3) Comparison example 1 contrast In the embodiment 1 of improving quality of Mechanism Analysis

Heat [su rum (also 1) evaluation result and SEM photograph prior Raman specification result collectively by taking into account (also 2), molybdenum (Mo-a plate) adapted to cover the metal plate including one side of the silicon carbide substrate, the epitaxial growth therebetween yes pin (EG), crystallinity can be significantly low temperature is enhanced know (crystallinity). Thus, capping (capping) metal (kinetic) environment is unique kinetic [...] number can be know.

1) first, 4H-a SiC substrate (Mo-a plate) against the molybdenum plate physically each other but, is slightly narrow gap (gap) is the consequential present between them are disclosed.

The thermal 4H a-SiC, all directions from which heat radiation is started, the heat emitted from the surface of the molybdenum plate (Mo-a plate) can be strongly reflected, this enlarged example of Figure 1 generates as, molybdenum (Mo) due of metallic (metallicity) are disclosed.

The fourth anti-reflective of the radiation heat from the molybdenum plate (Mo-a plate), preventing heat loss, 4H a-SiC can be inducing heat accumulating on the surface of a substrate. As a result, molybdenum plate (Mo-a plate) in contact with the surface of the substrate 4H a-SiC temperature, subjecting the exposed surface of a second temperature by thermal radiation environment compared, thereof can reach.

The, 4H-a SiC substrate in contact with the surface of the molybdenum plate (Mo-a plate), subjecting to an upper face of the base film in the thickness of the epitaxial yes pin (EG), silicon (Si) and sublimation is activated to a sufficient temperature to be reached, at the surface of carbon (C) atoms is moved to epitaxial yes pin (EG) allowing growth sufficiently evaluated as typical for the other.

In other words, exposed surface of the substrate at a temperature ranging from 850 to 950 °C 4H a-SiC for subjecting environment only (i.e., in the case of comparison example 1) but only flows, 4H-a SiC substrate of the molybdenum plate (Mo-a plate) and temperature (i.e., in the case of in the embodiment 1) can be more touching.

2) in addition, silicon (Si) substrate surface by sublimation undergo 4H a-SiC, silicon (Si) substrate surface has an increased density of the steam in the vicinity 4H a-SiC, the Si atoms is an expansion coefficient is substantially the sublimation rate, high quality epitaxial yes pin (EG) film can be composition suitable for growth environment.

However, as the surface of comparison example 1 simply upon exposure to conditions for subjecting 4H a-SiC, Si atoms ejected at environment without subjecting sublimated can lower the sublimation rate Si atoms cannot be about number to be coated. The quickly which makes the growth rate of the epitaxial yes pin (EG) grown epitaxial yes pin (EG) drop the crystallinity of a main factor are disclosed.

However, in the embodiment 1 is adapted to cover the front surface of the molybdenum plate (Mo-a plate) 4H a-SiC, Si atoms as the external semiconductor epitaxy growth environment [...] sublimated gap does not number space. The 4H-a SiC substrate surface as described in said Si atoms undergo sublimation by, 4H a-SiC and Si substrate surface in the vicinity of its increased density, 4H-a SiC substrate surface with silicon (Si) atoms Si atoms eventually increased to re-condensation and sublimation rate is equal to a substantial area of the supports.

Stage, one contemplated to be testing conditions in the embodiment 1 the operating requirements, any number not within the sublimated Si atoms would continue when remains, Si atoms 4H-a SiC substrate is applied to the sublimation rate and time will be identical to one speed and re, thereby Si atoms a situation occurs where the vibration is substantially the sublimation rate is 0 are disclosed.

In this case, any non-volatile surface Si atoms 4H a-SiC epitaxial yes pin number is equal to the thickness of the free (EG). The, Si atoms should allow a substantial area of the sublimation rate even lower which does not become 0, in the embodiment 1 of 4H-a SiC substrate surface covering the molybdenum plate (Mo-a plate) causes said can meet the demands.

I.e., schedule of Figure 1 as shown enlarged, molybdenum plate (Mo-a plate) Si atoms to absorbent (absorb) can cause some of the sublimated, molybdenum plate (Mo-a plate) is diffused into the rnc, in other words, molybdenum plate (Mo-a plate) is the surface of a substrate by the sublimated Si atoms 4H a-SiC, to 0 is not to substantially the sublimation rate are disclosed.

This, from the surface of the molybdenum plate (Mo-a plate) by selecting a peak intensity in the scleral Si 2p XPS pivotably (4 also). Specifically, (a) is also 4, molybdenum plate (Mo-a plate) itself and, in the embodiment 1 molybdenum (Mo-a plate) used for indicating each XPS spectral [...] plate are disclosed.

(A) as shown in the variation also 4, Si 2p signals are only used in the embodiment 1 are only molybdenum plate (Mo-a plate) and, specifically Si on signal by silicate (Silicate) are disclosed. Wherein [...] signal by silica, molybdenum plate (Mo-a plate) is exposed to the air before measured, attributed to Si atoms oxidized portion.

On the other hand, the argon ions formed on the surface of the molybdenum plate used in the embodiment 1 (Mo-a plate), and 4 (b) also to XPS spectral [...] are obtained. As shown in the (b) also 4, Si atoms to bulk placed on reduced concentration, molybdenum (Mo-a plate) can be known the presence of an inner plate.

Si 2p signal (Mo-a plate) in itself not observed since molybdenum plate, molybdenum plate (Mo-a plate) used in capping (capping) Si 2p signal is shown in the surface of a substrate by an sublimated Si atoms 4H a-SiC can be know.

In other words, one aspect of the molybdenum plate (Mo-a plate) adapted to cover the entire surface of the substrate 4H a-SiC, Si atoms are sublimated in the vicinity of the surface of the substrate surrounding the partial pressure 4H a-SiC, absorb some substantial speed does not become 0 by sublimation, sublimation is slow speed Si atoms can take place continuously or hypermetropia.

In this regard, in the embodiment 1 in using molybdenum plate (Mo-a plate) but, including Mo W, Pt, Ni, and Cu metal species selected from 1, 2 of these materials or at least one metal alloy a metal plate even when used in the embodiment 1 can be the same effect.

In the embodiment 2 and Comparison example 2

C (EG) is grown on the n - type epitaxial yes pin 4H-a SiC substrate, doped substrate strength and leakage current (leakage current), formed by the surface of the scratch to significant, objectively evaluate their electrical properties to tame (3 also).

The, 6H-a SiC using, in the embodiment 1 and comparison example 1 the same process by semi-insulating (semi-a insulating) in growing a Si epitaxial yes pin (EG), two 6H-a SiC yes pin sheet at the surface were obtained.

Wherein, which is covered with a molybdenum plate (Mo-a plate) that has been obtained in the semi-insulating Si (capping) yes pin sheet as in the embodiment 2 and, molybdenum plate (Mo-a plate) (UHV) conditions (capping) directly without subjecting thermally exposed semi-insulating Si that has been obtained in the comparison example 2 yes pin sheet is combined with a load.

Evaluation example 2

950 °C heat treatment, Si of the 6H-a SiC is grown on epitaxial yes pin (EG), 4H-a SiC when grown on the aspects of C (also 1) exhibits on exactly the same.

(1) In the embodiment 2 and Comparison example 2 Raman spectrum of evaluation

In the embodiment 2 and comparison example 2 obtained respectively yes pin against the seat, and whether each structural quality assessment by distorting the formation of epitaxial yes pin (EG) for, example 1 evaluation result equal to 4 also measuring the Raman spectrum shown in various conditions.

The Raman spectral selecting a sampling of Figure 5, in the case of in the embodiment 2, evaluation example 1 example 2 compared in the same context far more excellent structural qualities can be molecules.

Specifically, in the embodiment 2 of the ratio of the peak-to-peak 2D G, - 5:1 and, the lenslet 2D -34 cm (FWHM) of the peak^-1 The appears to them, molybdenum plate (Mo-a plate) an impurity (capping) single layer close case epitaxial yes pin (EG) can be known.

(2) In the embodiment2 of Electrical characterization

In the embodiment 2 of electrical characteristics are, applying a channel layer of same field effect transistor (Field Effect Transistor, FET), source electrode and a drain electrode electrically connected across said channel layer, said channel layer located on the gate insulating layer, and said gate electrode and an electrode electrically, measured as a field effect transistor.

Figure 6, number it became work field effect transistors, gate voltage in several different drain voltage according to the channel current's desire.

According to the 6 also, negative charge at the neutral line is formed, in the embodiment 2 can be know n - type carrier form. In addition voltage - current characteristic from measured values of, 0. 1V effective mobility (field a-effect mobility) is -1800 cm electric drain voltage of² /Vs estimated to substrate.

In this way the estimated field effective mobility, relatively high vacuum heat treatment conditions in previous other studies on the Si epitaxial growth of 200 to 1200 cm yes pin (EG)² Higher/Vs are disclosed.

The, molybdenum (Mo-a plate) in the plate (capping) is covered with an epitaxial growth to the ten wives yes pin (EG), field effect transistor channel layer when applied to structural quality, to improve electrical characteristics can be cylindrical.

The present invention refers to said in the embodiment are different but limited to number tank can be in various forms, in the present invention is technical idea of the present invention is provided to essential features or person with skill in the art without changing other specific embodiment can form can be understand are disclosed. In the embodiment described above the exemplary non-limiting all sides are understood to which must substrate.