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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 3653. Отображено 100.
05-01-2012 дата публикации

High-precision resistor and trimming method thereof

Номер: US20120001679A1
Автор: Antonello Santangelo, Stefania Maria Serena PRIVITERA
Принадлежит: STMICROELECTRONICS SRL

An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

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Номер записи: 1
17-05-2012 дата публикации

Circuit Protection Device

Номер: US20120120538A1
Автор: Katsuaki Suzuki
Принадлежит: Katsuaki Suzuki

There is provided a circuit protection device with further improved possibility of protecting the circuit. In the circuit protection device ( 1 ) includes a bimetal switch ( 4 ) and a PTC component ( 2 ), the bimetal switch and the PTC device are electrically connected in parallel, and the PTC component has a resistance after activation that is equal to or less than 1.1 times as large as a specific resistance of an electric circuit to which the circuit protection device is to be incorporated, which specific resistance is calculated based on the rated voltage and the rated current of the electrical circuit from the following equation (1): Rated Voltage/Rated Current=Specific Resistance  (1).

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Номер записи: 2
31-01-2013 дата публикации

Aresistive device with flexible substrate and method for manufacturing the same

Номер: US20130025915A1
Автор: Dar-Win Lo, Hsing-Kai CHENG, Sung-Chan YEN, Yen-Ting Lin
Принадлежит: Cyntec Co Ltd

A resistive device includes a resistive layer, a flexible substrate arranged on the resistive layer, and an electrode layer. The electrode layer includes two electrode sections arranged below the resistive layer and separate to each other. Moreover, a method for manufacturing the resistive device with flexible substrate is also disclosed.

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Номер записи: 3
11-04-2013 дата публикации

CHIP THERMISTOR AND METHOD OF MANUFACTURING SAME

Номер: US20130088319A1
Автор: SAITO Yo, TSUCHIDA Daisuke, YAMADA Kouki
Принадлежит: TDK Corporation

A chip thermistor has a thermistor portion including a ceramic material containing respective metal oxides of Mn, Ni, and Co as major ingredients; a pair of composite portions including a composite material of Ag—Pd, and respective metal oxides of Mn, Ni, and Co and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; and external electrodes connected to the pair of composite portions, respectively. In this manner, the pair of composite portions are used as bulk electrodes and, for this reason, the resistance of the chip thermistor can be adjusted mainly with consideration to the resistance in the thermistor portion without need for much consideration to the distance between the external electrodes and other factors. 1. A chip thermistor comprising:a thermistor portion comprised of a ceramic material containing a metal oxide as a major ingredient;a pair of composite portions comprised of a composite material including a metal and a metal oxide and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; andexternal electrodes arranged at both ends in a longitudinal direction of an substantially rectangular parallelepiped shaped element body which includes the thermistor portion and the pair of composite portions, the external electrodes are connected to the pair of composite portions respectively.2. The chip thermistor according to claim 1 , wherein each of the external electrodes is configured to cover respective end faces in the longitudinal direction of the element body.3. The chip thermistor according to claim 1 , wherein each of the external electrodes is configured to oppose to each other on at least one side face which extends along the longitudinal direction of the element body.4. The chip thermistor according to claim 1 , wherein the thermistor portion is configured in a layered structure such that a direction in which ...

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Номер записи: 4
18-07-2013 дата публикации

CURRENT-SENSING RESISTOR

Номер: US20130181807A1
Автор: Hetzler Ullrich
Принадлежит: ISABELLENHUETTE HEUSLER GMBH & CO. KG

The invention relates to a current-sensing resistor () for measuring an electric current, in particular also for measuring a battery current in a vehicle power supply, having a plate-shaped first connecting part () for introducing the electrical current to be measured, wherein the plate-shaped first connecting part () consists of an electrically conductive conductor material; a plate-shaped second connecting part () for conducting away the electrical current to be measured, wherein the plate-shaped second connecting part () consists of an electrically conductive conductor material; and a plate-shaped resistance element (), which is connected in the current path between the two connecting parts and through which the electrical current to be measured flows, wherein the resistance element () consists of a comparatively high-impedance resistance material. According to the invention an incision () is arranged in the plate-shaped first connecting part () and/or in the plate-shaped second connecting part () in order to reduce the temperature dependency of the measurement and to eliminate the influence of the plate-shaped connecting parts (usually copper or aluminum). 1. A current-sense resistor adapted for measuring an electric current comprising:a) a plate-shaped first connecting part for introducing the electric current to be measured, wherein the plate-shaped first connecting part comprises an electrically conductive conductor material,b) a plate-shaped second connecting part for conducting away the electric current to be measured, wherein the plate-shaped second connecting part comprises an electrically conductive conductor material, andc) a plate-shaped resistance element, which is connected in a current path between the first and second connecting parts and through which the electric current to be measured flows, wherein the resistance element comprises a low-ohm resistance material,d) wherein at least one incision is arranged in at least one of the plate-shaped ...

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Номер записи: 5
08-08-2013 дата публикации

Printed Temperature Sensor

Номер: US20130203201A1
Автор: David Thomas Britton, Margit Härting
Принадлежит: PST Sensors Pty Ltd

A method of producing a temperature sensing device is provided. The method includes forming at least one silicon layer and at least one electrode or contact to define a thermistor structure. At least the silicon layer is formed by printing, and at least one of the silicon layer and the electrode or contact is supported by a substrate during printing thereof. Preferably, the electrodes or contacts are formed by printing, using an ink comprising silicon particles having a size in the range 10 nanometres to 100 micrometres, and a liquid vehicle composed of a binder and a suitable solvent. In some embodiments the substrate is an object the temperature of which is to be measured. Instead, the substrate may be a template, may be sacrificial, or may be a flexible or rigid material. Various device geometries are disclosed.

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Номер записи: 6
29-08-2013 дата публикации

Semiconductor ceramic and resistive element

Номер: US20130221475A1
Автор: Sakyo Hirose
Принадлежит: Murata Manufacturing Co Ltd

Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R1 1-x R2 x BaMn 2 O 6 in which 0.05≦x≦1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05≦x≦0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0≦x≦0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0≦x≦1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.

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Номер записи: 7
05-09-2013 дата публикации

SEMICONDUCTOR CERAMIC COMPOSITION FOR NTC THERMISTORS

Номер: US20130229256A1
Автор: MIURA Tadamasa, Tashiro Eisuke
Принадлежит: MURATA MANUFACTURING CO., LTD.

A semiconductor ceramic composition for use as a component of the body of NTC thermistors contains at least manganese and cobalt as main ingredients and both aluminum and titanium as additional ingredients for resistance adjustment by annealing. It becomes easier to adjust the resistance of the composition by annealing when the titanium content is equal to or lower than about 9.2 parts by weight on a TiObasis relative to 100 parts by weight of the main ingredients. 1. A semiconductor ceramic composition for NTC thermistors comprising:manganese and cobalt as main ingredients; andboth aluminum and titanium as additional ingredients.2. The semiconductor ceramic composition for NTC thermistors according to claim 1 , wherein{'sub': '2', 'the titanium is present in an amount of about 9.2 parts by weight or less on a TiObasis relative to 100 parts by weight of the main ingredients.'}3. The semiconductor ceramic composition for NTC thermistors according to claim 2 , additionally containing iron.4. The semiconductor ceramic composition for NTC thermistors according to claim 1 , additionally containing iron.5. A NTC semiconductor ceramic comprising a sintered semiconductor ceramic composition according to .6. The NTC semiconductor ceramic according to claim 5 , wherein the ceramic has a direct current resistance at 25° C. after annealing at a temperature of 300° C. to 500° C. which is at least 2.5% greater than before the annealing.7. The semiconductor ceramic according to claim 6 , wherein the weight ratio of aluminum to titanium measured as AlOto TiOis about 1 to 5.4.8. A NTC semiconductor ceramic comprising a sintered semiconductor ceramic composition according to .9. The NTC semiconductor ceramic according to claim 8 , wherein the ceramic has a direct resistance at 25° C. after annealing at a temperature of 300° C. to 500° C. which is at least 2.5% greater than before the annealing.10. The semiconductor ceramic according to claim 9 , wherein the weight ratio of aluminum ...

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Номер записи: 8
24-10-2013 дата публикации

Ptc resistor

Номер: US20130277359A1
Автор: Akihiro Umeda, Hirosi Fukuda, Katsuhiko Uno, Keizo Nakajima, Takahito Ishii
Принадлежит: Panasonic Corp

A PTC resistor according to the present invention comprises at least one PTC composition which comprises at least one resin and at least two conductive materials. The at least two conductive materials comprises at least two conductive materials different from each other. The at least one PTC composition may comprise a first PTC composition which comprises a first resin and at least one first conductive material and a second PTC composition which is compounded with the first PTC composition and comprises a second resin and at least one second conductive material. The at least one first conductive material is at least partially different from the at least one second conductive material. One of the first resin and the second resin may comprise a reactant resin and a reactive resin which is cross-linked with the reactant resin. The PTC resistor may comprise a flame retardant agent. The PTC resistor may comprise a liquid-resistant resin.

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Номер записи: 9
16-01-2014 дата публикации

METAL FOIL HAVING ELECTRICAL RESISTANCE LAYER, AND MANUFACTURING METHOD FOR SAME

Номер: US20140015635A1
Автор: Kurosawa Toshio
Принадлежит: JX NIPPON MINING & METALS CORPORATION

The present invention provides a metal foil provided with an electrical resistance layer, in which peeling between the metal foil and the electrical resistance layer disposed on the metal foil can be prevented and variation in the resistivity of the resistance layer can be reduced, and a method of manufacturing the same. The present invention includes a metal foil with an electrical resistance layer including a metal foil having a surface of a ten-point mean roughness Rz, which is measured by an optical method according to 1 μm or less and the surface being treated by irradiation with ion beams at an ion beam intensity of 0.70-2.10 sec·W/cmand an electrical resistance layer disposed on the surface of the metal foil. 1. A metal foil with an electrical resistance layer comprising:{'sup': 2', '2, 'a metal foil having a surface of a ten-point mean roughness Rz, which is measured by an optical method according to 1μm or less and the surface being treated by irradiation with ion beams at an ion beam intensity of 0.70 sec·W/cm-2.10 sec·W/cm; and'}an electrical resistance layer disposed on the surface of the metal foil.2. The metal foil with the electrical resistance layer according to claim 1 , wherein the electrical resistance layer has variation of a sheet resistance of less than ±5%.3. The metal foil with the electrical resistance layer according to claim 1 , further comprising a thermoplastic resin layer disposed on the electrical resistance layer.4. The metal foil with the electrical resistance layer according to claim 3 , wherein a peel strength is 0.7 kN/m or more.5. The metal foil with the electrical resistance layer according to claim 1 , wherein the electrical resistance layer is formed from a metal selected from the group consisting of aluminum claim 1 , nickel claim 1 , chromium claim 1 , copper claim 1 , iron claim 1 , indium claim 1 , zinc claim 1 , tantalum claim 1 , tin claim 1 , vanadium claim 1 , tungsten claim 1 , zirconium claim 1 , molybdenum claim 1 , ...

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Номер записи: 10
06-02-2014 дата публикации

OVER-CURRENT PROTECTION DEVICE

Номер: US20140035718A1
Автор: TSENG Chun Teng, WANG DAVID SHAU CHEW
Принадлежит: POLYTRONICS TECHNOLOGY CORP.

An over-current protection device is of an approximately quadrilateral structure with upper and lower surfaces, first and second side surfaces, in which the second side surface contains a bevel. The device comprises first and second electrodes, a first PTC material layer, and first and second conductive connecting members. The first electrode is formed on the upper or lower surface. The second electrode is formed on the lower surface and is insulated from the first electrode. The first PTC material layer extends along the upper surface and has a first surface electrically coupled to the first electrode, and a second surface electrically coupled to the second electrode. The first conductive connecting member is formed on the first side surface and is electrically coupled to the first electrode. The second conductive connecting member is formed on the second side surface and extends along the bevel to electrically couple to the second electrode. 1. An over-current protection device of an approximately quadrilateral structure with an upper surface , a lower surface , a first side surface and a second side surface in a cross-sectional view , the second side surface comprising a first bevel , the over-current protection device comprising:a first electrode formed on the upper surface or the lower surface;a second electrode formed on the lower surface and being insulated from the first electrode;a first PTC material layer extending along the upper surface, and having a first surface electrically coupled to the first electrode and a second surface electrically coupled to the second electrode;a first conductive connecting member formed on the first side surface, and being electrically coupled to the first electrode; anda second conductive connecting member formed on the second side surface and extending along the first bevel to electrically couple to the second electrode.2. The over-current protection device of claim 1 , wherein the first bevel does not go through the second ...

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Номер записи: 11
20-02-2014 дата публикации

OVER-CURRENT PROTECTION DEVICE

Номер: US20140049357A1
Автор: TSENG Chun Teng, WANG DAVID SHAU CHEW
Принадлежит: POLYTRONICS TECHNOLOGY CORP.

An over-current protection device comprises a PTC material layer, a first electrode layer and a second electrode layer. The PTC material layer has opposite first and second surfaces and opposite first and second lateral surfaces. The first electrode layer is in physical contact with the first surface of the PTC material layer and extends to the first lateral surface. The second electrode layer is in physical contact with the first surface of the PTC material layer and extends to the second lateral surface. The second electrode layer is insulated from the first electrode layer by a first separation. The first electrode layer and the second electrode layer are substantially laterally symmetrical, and serve as interfaces for current flowing in and out of the device when the over-current protection device is in use. 1. An over-current protection device , comprising:a PTC material layer having a first surface, a second surface, a first lateral surface and a second lateral surface, the second surface being opposite to the first surface, and the second lateral surface being opposite to the first lateral surface;a first electrode layer in physical contact with the first surface of the PTC material layer and extending to the first lateral surface; anda second electrode layer in physical contact with the first surface of the PTC material layer and extending to the second lateral surface, the second electrode layer being insulated from the first electrode layer by a first separation;wherein the first electrode layer and the second electrode layer are substantially laterally symmetrical, and serve as interfaces for current flowing in and out of the over-current protection device, respectively.2. The over-current protection device of claim 1 , wherein the first separation comprises solder mask.3. The over-current protection device of claim 1 , wherein a value of a total area of the first and second electrode layers divided by an area of the PTC material layer is between 0.6 and ...

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Номер записи: 12
06-03-2014 дата публикации

Electrical heating device

Номер: US20140061183A1
Автор: Jonathan (Yu) Zhang, Luffy (Fei) Liu, Sherry (Li) Chen, William (Wei) Li
Принадлежит: WET Automotive Systems AG

The invention relates to an electrical heating device with at least one electrical heating resistor and at least one contacting device.

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Номер записи: 13
12-01-2017 дата публикации

THIN-FILM RESISTOR AND METHOD FOR PRODUCING THE SAME

Номер: US20170011826A1
Автор: HIROSHIMA Yasushi
Принадлежит:

Provided is a thin-film resistor that has a higher resistance value than the conventional thin-film resistors while retaining excellent TCR characteristics. The thin-film resistor includes a substrate, a pair of electrodes formed on the substrate, and a resistive film connected to the pair of electrodes. The resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, and each of the first resistive film and the second resistive film contains Si, Cr, and N as the main components. 1. A thin-film resistor comprising a substrate , a pair of electrodes formed on the substrate , and a resistive film connected to the pair of electrodes , whereinthe resistive film includes a first resistive film and a second resistive film, the second resistive film having a different TCR from that of the first resistive film, andeach of the first resistive film and the second resistive film contains Si, Cr, and N as main components.2. The thin-film resistor according to claim 1 , wherein one of the first resistive film or the second resistive film has a positive TCR value claim 1 , and the other has a negative TCR value.3. The thin-film resistor according to claim 2 , wherein the first resistive film and the second resistive film contain different percentages of silicon nitride across xTCR (a threshold of silicon nitride) as a boundary claim 2 , the xTCR being a percentage of silicon nitride at which a positive TCR changes to a negative TCR or a negative TCR changes to a positive TCR.4. The thin-film resistor according to claim 1 , whereineach of the first resistive film and the second resistive film contains silicon nitride, anda percentage of Si that forms silicon nitride in the first resistive film relative to the entire Si contained in the first resistive film is less than or equal to 63%, and a percentage of Si that forms silicon nitride in the second resistive film relative to the ...

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Номер записи: 14
09-01-2020 дата публикации

CURRENT GENERATING CIRCUITS CAPABLE OF GENERATING CURRENTS WITH DIFFERENT TEMPERATURE COEFFICIENTS AND FLEXIBLY ADJUSTING SLOPE OF THE TEMPERATURE COEFFICIENT

Номер: US20200011742A1
Автор: MA Ying-Ting, Wang Jing-Chyi
Принадлежит:

A current generating circuit includes a first circuit subunit, a second circuit subunit and a third circuit subunit. The first circuit subunit is configured to generate a first current having a first temperature coefficient. The first temperature coefficient is a negative temperature coefficient. The second circuit subunit is configured to generate a second current having a second temperature coefficient. The second temperature coefficient is a positive temperature coefficient. The third circuit subunit is configured to generate a third current having a third temperature coefficient according to a difference between the first current and the second current. An absolute value of a slope of the third temperature coefficient is greater than that of the first temperature coefficient or that of the second temperature coefficient. 1. A current generating circuit , comprising:a first circuit subunit, configured to generate a first current having a first temperature coefficient, wherein the first temperature coefficient is a negative temperature coefficient;a second circuit subunit, configured to generate a second current having a second temperature coefficient, wherein the second temperature coefficient is a positive temperature coefficient; anda third circuit subunit, configured to generate a third current having a third temperature coefficient according to a difference between the first current and the second current, wherein an absolute value of a slope of the third temperature coefficient is greater than an absolute value of a slope of the first temperature coefficient or an absolute value of a slope of the second temperature coefficient.2. The current generating circuit as claimed in claim 1 , wherein the first current is a sum of the third current and the second current claim 1 , and wherein the third temperature coefficient is a negative temperature coefficient claim 1 , the absolute value of the slope of the third temperature coefficient is greater than the ...

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Номер записи: 15
11-01-2018 дата публикации

Flexible positive temperature coefficient sheet and method for making the same

Номер: US20180012686A1
Автор: Boris Golubovic, Jianhua Chen, Weiqing Guo
Принадлежит: Littelfuse Inc

A flexible sheet of positive temperature coefficient (PTC) material formed of a polymer resin and a conductive filler, the sheet of PTC material having a thickness in a range of 10 μm to 100 μm. A method for forming the flexible sheet of positive temperature coefficient material may include preparing a PTC ink from a polymer resin, a conductive filler, and a solvent, applying the PTC ink to a substrate, pulling a blade over the PTC ink to create a uniformly thick layer of the PTC ink on the substrate, and allowing the PTC ink to dry so that the solvent evaporates and leaves a solid layer of PTC material on the substrate.

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Номер записи: 16
09-01-2020 дата публикации

VERTICALLY-CONSTRUCTED, TEMPERATURE-SENSING RESISTORS AND METHODS OF MAKING THE SAME

Номер: US20200013528A1
Автор: Cestra Gregory Keith, Strachan Andrew
Принадлежит:

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within the semiconductor substrate and including a top contact. A conductive layer located over the semiconductor substrate electrically connects to a subset of the top contacts. 1. An integrated circuit , comprising:a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within a semiconductor substrate and including a top contact; anda conductive layer located over the semiconductor substrate and connecting to a subset of the resistor unit cells.2. The integrated circuit of claim 1 , wherein the conductive layer includes a bond pad.3. The integrated circuit of claim 1 , wherein the conductive layer includes a laser-trimmed link.4. The integrated circuit of claim 1 , wherein each resistor unit cell includes a temperature sensitive layer of the semiconductor substrate.5. The integrated circuit of claim 1 , wherein each resistor unit cell is electrically connected to a bottom-side contact claim 1 , the semiconductor substrate located between the top-contacts and the bottom-side contact.6. The integrated circuit of claim 1 , wherein each resistor unit cell includes an isolation ring that conductively isolates that resistor unit cell from neighboring resistor unit cells.7. The integrated circuit of claim 6 , wherein the isolation ring is circular.8. The integrated circuit of claim 1 , wherein the conductive layer connects the subset of resistor unit cells in parallel.9. The integrated circuit of claim 1 , wherein a circuit formed by the conductive layer and the subset of resistor unit cells includes a tunnel link between two neighboring unit cells.10. The integrated circuit of claim 1 , wherein each resistor unit cell includes a lightly-doped semiconductor layer between two heavily ...

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Номер записи: 17
14-01-2021 дата публикации

OVER-CURRENT PROTECTION DEVICE

Номер: US20210013711A1
Автор: CHEN Jack Jih-Sang, JIANG Chang-Hung
Принадлежит:

A over-current protection device includes a positive temperature coefficient (PTC) polymeric element having two opposite surfaces, two electrodes respectively connected to the surfaces of the PTC polymeric element, and a power-free trip indicator disposed on at least one of the electrodes for sensing temperature of the over-current protection device. 1. An over-current protection device comprising:a positive temperature coefficient (PTC) polymeric element having two opposite surfaces;two electrodes respectively connected to said surfaces of said PTC polymeric element; anda power-free trip indicator formed on at least one of said electrodes for sensing temperature of said over-current protection device.2. The over-current protection device of claim 1 , wherein said power-free trip indicator directly contacts said at least one of said electrodes.3. The over-current protection device of claim 1 , wherein said power-free trip indicator includes a thermochromic material.4. The over-current protection device of claim wherein said over-current protection device exhibits a trip surface temperature that is equal to or higher than a color-changing temperature of said power-free trip indicator.5. The over-current protection device of claim 4 , wherein said trip surface temperature of said over-current protection device is higher than 70° C.6. The over-current protection device of claim 1 , wherein said power-free trip indicator exhibits a color-changing temperature higher than 60° C.7. The over-current protection device of claim 6 , wherein said color-changing temperature of said power-free trip indicator is higher than 60° C. and not greater than 200° C.8. The over-current protection device of claim 1 , further comprising a cover layer that is disposed between said power-free trip indicator and said at least one of said electrodes.9. The over-current protection device of claim 8 , wherein said power-free trip indicator indirectly contacts said at least one of said electrodes ...

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Номер записи: 18
19-01-2017 дата публикации

MICRORESISTOR

Номер: US20170018340A1
Автор: Chen Huang-Chou, Lo Ta-Wen, Yao Chun-Cheng
Принадлежит:

A micro-resistor includes a resistor material layer, an electrode set and a first protective layer. The electrode set includes a first electrode and a second electrode to define an opening which exposes the resistor material layer. A space between the first electrode and the second electrode represents an opening size. The first protective layer covers the opening completely and has a coverage size along a direction parallel with the space. The micro-resistor has a resistance of less than 5 milliohm and the difference of the opening size and the coverage size is less than 3100 micrometer to make the temperature coefficient of electrical resistance of the micro-resistor not greater than 150 ppm/° C. 1. A micro-resistor , comprising:a resistor material layer;an electrode set comprising a first electrode and a second electrode, both disposed on the same side of said resistor material layer to define an opening which exposes said resistor material layer and space between said first electrode and said second electrode defining an opening size of said opening; anda first protective layer to cover said opening completely and having a coverage size along a direction parallel with said space, wherein said micro-resistor has an electrical resistance less than 5 milliohm and the difference of said opening size and said coverage size is less than 3100 micrometer to make the temperature coefficient of electrical resistance of said micro-resistor not greater than 150 ppm/° C.2. The micro-resistor of claim 1 , wherein said first electrode comprises a first plating electrode layer and a first electrode contact and said first plating electrode layer is in direct contact with said resistor material layer and disposed between said resistor material layer and said first electrode contact.3. The micro-resistor of claim 2 , wherein said first protective layer partially covers said first plating electrode layer without directly contacting said first electrode contact.4. The micro-resistor ...

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Номер записи: 19
21-01-2016 дата публикации

VOLTAGE-CONTROLLED RESISTOR BASED ON PHASE TRANSITION MATERIALS

Номер: US20160020005A1
Автор: CABRERA-PIZARRO Rafmag, SEPULVEDA-ALANCASTRO Nelson
Принадлежит: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSTIY

A voltage-controlled resistor is provided. The resistor structure includes first and second resistive elements each including a phase change material that changes resistance in response to a change in temperature of the phase change material. A heating element is arranged in thermal contact with the first and second resistive elements. A control circuit receives a selected input voltage and supplies power based on the selected input voltage to the heating element to heat the first and second resistive elements to a selected temperature. The first and second resistive elements, which are proximate to and electrically isolated from each other, have a selected resistance at the selected temperature. A feedback circuit senses a change in temperature of the first resistive element and adjusts power supplied to the heating element based on the change in temperature of the first resistive element to maintain a resistance of the second resistive element at the selected resistance.

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Номер записи: 20
03-02-2022 дата публикации

ACTIVE INRUSH CURRENT LIMITER

Номер: US20220037877A1
Автор: Agarwal Nitish, Mallory William, Wagner Randall M.
Принадлежит:

An active inrush current limiter and method of limiting inrush current actively monitor line voltage and voltage drop across a current limiting resistance in a manner that eliminates the impact of fluctuations of line voltage on the decision of when to close a relay and bypass a current limiting resistance between the AC source and a group of power supplies. The active inrush current limiter includes a microcontroller connected to control the electronic switch and relay. The microcontroller is configured to sample the source AC power and detect a pattern of current flow through the electronic switch and current limiting resistance. A program executed in the microcontroller includes calculations that determine when to close the relay and bypass the current limiting resistance by detecting changes in power flow through the current limiting resistance that reliably correspond to a time when the capacitors in the power supplies have completed charging. 1. A method of limiting inrush current in a module arranged between an ON/OFF switching device and equipment receiving AC power from the ON/OFF switching device , said method comprising:closing an electronic switch to connect AC power to a load through a current limiting resistance;connecting a relay contact in parallel with the electronic switch and current limiting resistance so that closure of the relay contact connects AC power directly to the capacitive load, bypassing the current limiting resistance;taking a plurality of voltage measurements of the AC power for a half-cycle (n) of the AC power;summing the plurality of voltage measurements of the AC power to generate VLine(n);taking a plurality of voltage measurements across the current limiting resistance for the half cycle (n) of AC power;summing the plurality of voltage measurements across the current limiting resistance to generate VDrop(n);subtracting VDrop(n) from VLine(n) to generate VDiff(n); i. VDiff(n) a predetermined percentage of VLine(n), or', 'ii. VDiff ...

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Номер записи: 21
21-01-2016 дата публикации

Self-regulating conductive heater and method of making

Номер: US20160021705A1
Автор: Jack Barfuss, Syed Rafat Iqbal
Принадлежит: GENTHERM CANADA LTD

A heater comprising: a heater layer including: (a) a thermoplastic elastomer; and (b) a plurality of conductive fillers mixed within the thermoplastic elastomer, wherein the conductive fillers are a metal coated material or entirely made of metal; and wherein the heater layer is made up of about 30 percent or less conductive fillers.

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Номер записи: 22
26-01-2017 дата публикации

RESISTOR WITH TEMPERATURE COEFFICIENT OF RESISTANCE (TCR) COMPENSATION

Номер: US20170025206A1
Автор: Bertsch Thomas L., Smith Clark L., Veik Thomas L., Wyatt Todd L.
Принадлежит: VISHAY DALE ELECTRONICS, LLC

A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals. 149.-. (canceled)50. A resistor having temperature coefficient of resistance (TCR) compensation , the resistor comprising:a resistive strip disposed between first conductive strip and second conductive strip;a first main terminal and a first voltage sense terminal formed in the first conductive strip separated by a first slot formed at an outer edge of the conductive strip and having a depth extending toward the resistive strip, the first main terminal being larger than the first voltage sense terminal;a second main terminal and a second voltage sense terminal formed in the second conductive strip separated by a second slot formed at an outer edge of the conductive strip and having a depth extending toward the resistive strip, the second main terminal being larger than the second voltage sense terminal; anda third slot formed at an edge of the resistive strip between the first and second voltage sense terminals.51. The resistor of claim 50 , wherein the first conductive strip is connected to the resistive strip at a connection side of the first conductive strip claim 50 , and wherein the first slot has an open end other than at the connection side of the first conductive strip.52. The resistor of claim 51 , wherein the second conductive strip is connected to the resistive strip at a connection side of the ...

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Номер записи: 23
28-01-2016 дата публикации

PTC THERMISTOR CERAMIC COMPOSITION AND PTC THERMISTOR ELEMENT

Номер: US20160027560A1
Автор: ITOH Kazuhiko, SHIMURA Yoshikazu
Принадлежит: TDK Corporation

A barium titanate based PTC thermistor ceramic composition without using Pb. Its Curie temperature is shifted to a temperature higher than 120° C. The PTC thermistor can readily turn semiconductive even if it is sintered in air. The resistivity at 25° C. is low and the variation rate of the resistivity at 25° C. with time is little. The PTC thermistor ceramic composition includes a sintered body having a barium titanate based compound represented by formula (1) as the main component, (BaBiARE)(TiTM)O(1), wherein, 1.02y≦x≦1.5y (2), 0.007≦y≦0.125 (3), 0≦(w+z)≦0.01 (4), 0.97≦α≦1.06 (5), and the sintered body contains Ca in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element. 1. A PTC thermistor ceramic composition , comprising {'br': None, 'sub': 1-x-y-w', 'x', 'y', 'w', 'α', '1-z', 'z', '3, '(BaBiARE)(TiTM)O\u2003\u2003(1),'}, 'a sintered body comprising a barium titanate based compound represented by the following formula (1) as the main component,'}wherein, in the formula (1), A represents at least one element selected from the group consisting of Na and K,RE represents at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er,TM represents at least one element selected from the group consisting of V, Nb and Ta, [{'br': None, 'i': y≦x≦', 'y, '1.021.5\u2003\u2003(2)'}, {'br': None, 'i': 'y≦', '0.007≦0.125\u2003\u2003(3)'}, {'br': None, 'i': 'w+z', '0≦()≦0.01\u2003\u2003(4)'}, {'br': None, '0.97≦α≦1.06\u2003\u2003(5)'}], 'w, x, y, z and a satisfy the following inequations (2) to (5), in which, the units of w, x, y and z are all mole, and a represents the molar ratio of Ba site to Ti site,'}Ca is further contained in a ratio of 0.01 mol or more and less than 0.05 mol relative to 1 mol of Ti site in terms of element.2. The PTC thermistor ceramic composition of claim 1 , wherein claim 1 ,Si is further contained in the PTC thermistor ceramic composition in a ratio of 0.035 mol or less ...

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Номер записи: 24
28-01-2021 дата публикации

Heat utilizing device

Номер: US20210025765A1
Автор: Akimasa Kaizu, Eiji Komura, Naoki Ohta, Shinji Hara, Susumu Aoki
Принадлежит: TDK Corp

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

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Номер записи: 25
28-01-2021 дата публикации

Method for producing a printed circuit board using a mould for conductor elements

Номер: US20210029831A1
Автор: Markus WÖLFEL
Принадлежит: JUMATECH GMBH

A method is provided for producing a printed circuit board including at least one conductor element, which extends between connection points in the printed circuit board. In order to increase the productivity of a known method for producing a printed circuit board including at least one conductor element, which extends between connection points in the printed circuit board, the method comprises the following steps: Step A: providing a mold having at least one receptacle for a conductor element; Step B: arranging a conductor element in the receptacle of the mold; Step C: connecting the conductor element arranged in the receptacle of the mold to an electrically conductive sheetlike element at positions of the intended connection points; Step D: embedding the conductor element, which is connected to the electrically conductive sheetlike element, into insulating material; and Step E: working out the connection points from the electrically conductive sheetlike element.

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Номер записи: 26
17-02-2022 дата публикации

WIRELESS FLUID TEMPERATURE SENSING OF A MULTIWAY VALVE

Номер: US20220049787A1
Автор: Solazzo Domenico
Принадлежит: WOCO Industrietechnik GmbH

The embodiments relate to a method for detecting the temperature of a fluid flow of a control valve which has an electromagnetic actuator, in which a temperature-sensitive resistor is exposed to the fluid flow, and is integrated into a detection circuit. As a function of the fluid temperature, a primary circuit of the electromagnetic actuator is inductively influenced by the detection circuit. 1. A method for detecting a fluid temperature of a fluid flow of a control valve with an electromagnetic actuator , the method comprising:exposing the fluid flow to a temperature-sensitive resistor;integrating the temperature-sensitive resistor into a detection circuit; andinductively influencing, by the detection circuit, a primary circuit of the electromagnetic actuator, wherein the inductively influencing depends on the fluid temperature.2. The method of claim 1 , wherein the inductive influence of the primary circuit is associated with the fluid temperature.3. The method of claim 2 , wherein a change in the fluid temperature causes a change in the resistance value of the temperature sensitive resistor and a change in the detection circuit.4. The method of claim 3 , wherein as a result of the inductive interference of the primary circuit claim 3 , an energy consumption changes.5. The method of claim 4 , wherein the fluid temperature is inferred via the energy consumption change.6. The method of claim 1 , further comprising:monitoring the fluid temperature continuously or cyclically; andderiving control and/or regulation measures based on the monitoring.7. The method of claim 1 , wherein the temperature-sensitive resistor comprises a thermistor claim 1 , such as a Negative Temperature Coefficient thermistor.8. A device for detecting a fluid temperature of a fluid flow of a control valve having an electromagnetic actuator claim 1 , the device comprising:a detection circuit having integrated therein a temperature-sensitive resistor exposed to the fluid flow, wherein the ...

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Номер записи: 27
01-05-2014 дата публикации

Surface mountable over-current protection device

Номер: US20140118871A1
Автор: Chi Jen Su, Chun Teng Tseng, David Shau Chew Wang
Принадлежит: Polytronics Technology Corp

A surface mountable over-current protection device having upper and lower surfaces comprises a PTC device, first and second electrodes, and first and second circuits. The PTC device comprises a PTC material layer and first and second conductive layers. The PTC material layer is disposed between the conductive layers and comprises crystalline polymer and conductive filler dispersed therein. The first electrode comprises a pair of first metal foils, whereas the second electrode comprises a pair of second metal foils. The first circuit connects the first electrode and conductive layer, and has a first planar line extending horizontally. The second circuit connects the second electrode and conductive layer, and has a second planar line extending horizontally. At least one of the planar lines has a thermal resistance sufficient to mitigate heat dissipation by which the over-current protection device undergoes a test at 25° C. and 8 amperes can trip within 60 seconds.

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Номер записи: 28
11-02-2016 дата публикации

Electrical Device

Номер: US20160042845A1
Автор: Diane G. Bigler, Jaydip Das, Kavitha Bharadwaj, Mario G. Sepulveda, Mark F. Wartenberg, Nicola Pugliano, Richard B. Lloyd, Ting Gao
Принадлежит: Tyco Electronics Corp

An electrical device having first and second electrodes and a layer of a conductive composite electrically in contact with the first and second electrodes. The conductive composite is a mixture of a semi-crystalline polymer and a conductive filler, the conductive filler including a plurality of particles containing an inner material including a first metal; and an outer material surrounding the inner material, the outer material including a second metal; and an intermetallic compound formed between the inner material and the outer material. The intermetallic compound has features from the inner material and the outer material. The device can be a circuit protection device. Also provided is a method of making a conductive composite by dry mixing the components.

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Номер записи: 29
09-02-2017 дата публикации

SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR

Номер: US20170040092A1
Автор: FUJITA Kazutaka, ITOH Kazuhiko, SHIMURA Yoshikazu
Принадлежит: TDK Corporation

A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. 2. The semiconductor ceramic composition according to claim 1 , wherein the semiconductor ceramic composition further comprises Si in the proportion of 0.035 mol or less in terms of element relative to 1 mol of Ti site claim 1 , wherein Ti site represents the total number of moles of Ti and TM.3. The semiconductor ceramic composition according to claim 1 , wherein the semiconductor ceramic composition further comprises Mn in the proportion of 0.0015 mol or less in terms of element relative to 1 mol of Ti site claim 1 , wherein Ti site represents the total number of moles of Ti and TM.4. A PTC thermistor comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a ceramic body which is formed by using the semiconductor ceramic composition according to ; and'}electrodes which are formed on the surfaces of the ceramic body.5. The semiconductor ceramic composition according to claim 2 , wherein the semiconductor ceramic composition further comprises Mn in the proportion of 0.0015 mol or less in terms of element relative to 1 mol of Ti site claim 2 , wherein Ti site represents the total number of moles of Ti and TM.6. A PTC thermistor comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'a ceramic body which is formed by using the semiconductor ceramic composition according to ; and'}electrodes which are formed on the surfaces of the ceramic body.7. A PTC thermistor comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'a ceramic body which is formed by using the semiconductor ceramic composition according to ; and'}electrodes which are formed on the surfaces of the ceramic body.8. A PTC thermistor comprising:{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, 'a ceramic body which is formed by using the semiconductor ceramic composition according to ; and'}electrodes which are formed on the surfaces of the ceramic body. The ...

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Номер записи: 30
24-02-2022 дата публикации

TEMPERATURE COMPENSATION FOR SILICON RESISTOR USING INTERCONNECT METAL

Номер: US20220057818A1
Автор: Gonzalez Octavio A., Seaberg Charles Eric
Принадлежит:

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor. 1. An integrated circuit , comprising:a driver having a first driver output and a second driver output;{'claim-text': ['a process resistor including a first material having a first temperature coefficient, and', 'an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient, wherein a first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor; and'], '#text': 'a first resistance coupled between a first node coupled to the first driver output and a second node, wherein the first resistance includes:'}{'claim-text': ['a second process resistor including the first material, and', 'a second interconnect resistor including the second material and configured to provide at least 20% of the second resistance, wherein a first terminal of the second interconnect resistor is directly connected to a first terminal of the second process resistor.'], '#text': 'a second resistance coupled between the second node and a third node coupled to the second driver output, wherein the second resistance includes:'}2. The integrated circuit of claim 1 , ...

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Номер записи: 31
18-02-2016 дата публикации

Circuit Protection Device

Номер: US20160049784A1
Автор: Guo Tao, HU Hui, Liu Jianyong, Wang Bin, Ye Jianzhe
Принадлежит: Tyco Electronics (Shanghai) Co. Ltd.

A circuit protection device that includes a PTC device and a diode is disclosed. A first insulation layer is formed between the first electrode surfaces of the diode and the PTC device. Vias for thermally and electrically connecting the first electrode surface of the diode and the first electrode surface of the PTC device are formed in the first insulation layer. First, second, and third external electrode pads are provided on the second insulation layer formed on the second electrode surface of the PTC device. The second electrode surface of the PTC device is electrically connected to the first external electrode pad. The first electrode surface of the diode and the first electrode surface of the PTC device are electrically connected to the second external electrode pad. The second electrode surface of the diode is electrically connected to the third external electrode pad. If overvoltage occurs in the circuit, heat generated in the diode may be timely conducted to the PTC device by the vias causing the temperature of the PTC device to increase rapidly and bring the PTC device into a high resistance state, thus timely protecting the circuit from overvoltage. 1. A circuit protection device , comprising:a PTC device having a first electrode surface and a second electrode surface opposite to the first electrode surface of the PTC device;a diode having a first electrode surface and a second electrode surface opposite to the first electrode surface of the diode;a first insulation layer disposed between the first electrode surface of the diode and the first electrode surface of the PTC device;vias extending through the first insulation layer thermally and electrically connecting the first electrode surface of the diode and the first electrode surface of the PTC device;a second insulation layer on the second electrode surface of the PTC device; anda first external electrode pad on the second insulation layer electrically connected to the second electrode surface of the ...

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Номер записи: 32
14-02-2019 дата публикации

RESISTOR AND TEMPERATURE SENSOR

Номер: US20190049316A1
Автор: MATSUSHITA Takafumi
Принадлежит: SEMITEC Corporation

A resistor which is able to have a reduced thickness for an insulating substrate and in which occurrence of cracking is able to be suppressed during production of the insulating substrate, the production of the resistor and mounting of the substrate, and in which the safety of a medical device is increased by forming the insulating substrate using a biocompatible material; and a temperature sensor are provided. This resistor is provided with: an insulating substrate that has a bending strength of 690 MPa or more and a thickness of 10 to 100 μm; a resistive film that is formed on the insulating substrate; at least a pair of electrode layers, that are electrically connected to the resistive film; and a protective film that covers a region where the resistive film is formed, while forming exposure portions so that at least parts of the electrode layers are exposed therein. 1. A resistor comprising:an insulating substrate having bending strength of 690 MPa or more and a thickness dimension of 10 μm to 100 μm;a resistive film formed on the insulating substrate;at least a pair of electrode layers electrically connected to the resistive film; anda protective film that covers a region in which the resistive film is formed, and having exposed portions formed to expose at least a part of the pair of electrode layers.2. The resistor according to claim 1 , wherein the insulating substrate is formed of a ceramic material.3. The resistor according to claim 1 , wherein the insulating substrate is formed of a single crystal material.4. The resistor according to claim 2 , wherein an average particle diameter after sintering of the ceramic material is 0.1 μm to 4 μm.5. The resistor according to claim 2 , wherein a void fraction of the ceramic material after sintering is 3% or less.6. The resistor according to claim 2 , wherein the ceramic material is zirconia claim 2 , silicon nitride claim 2 , alumina claim 2 , or a mixture of at least one of these materials.7. The resistor ...

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Номер записи: 33
13-02-2020 дата публикации

HIGHLY SENSITIVE REDUCED GRAPHENE OXIDE-NICKEL COMPOSITE BASED CRYOGENIC TEMPERATURE SENSOR

Номер: US20200049573A1
Автор: DINESH Narasimhiah Subrahmanyam, JAIN Pavithra B., KEDAMBAIMOOLE Vaishakh, KONANDUR Rajanna, MANASA , NAYAK M M., NEELLA Nagarjuna
Принадлежит:

The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible. 1. A highly sensitive fast response cryogenic temperature sensor comprising: a substrate; and a composite film deposited onto said substrate , wherein the composite film is further connected with a plurality of leads , characterized in that the composite film comprises a reduced graphene oxide-nickel composite.2. The temperature sensor as claimed in claim 1 , wherein the substrate is ceramic AlO.3. The temperature sensor as claimed in claim 1 , wherein the reduced graphene oxide-nickel composite film is screen printed onto said substrate.4. The composite film as claimed in wherein the plurality of leads is made of Indium.5. The composite film as claimed in wherein the composite film is connected with said plurality of leads using a conductive silver epoxy resin.6. The composite film as claimed in wherein connection between said composite film and said plurality of leads is further strengthened using a thermal epoxy resin.7. The temperature sensor as claimed in claim 1 , wherein the reduced graphene oxide-nickel composite film has a thickness ranging from 5 μm to 200 μm claim 1 , preferably of about 50 μm; width ranging from 0.05 mm to 2.5 mm claim 1 , preferably of about 1 mm; and length ranging from 0.1 mm to 10 mm claim 1 , preferably of about 4 mm.8. The temperature sensor as claimed in ...

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Номер записи: 34
13-02-2020 дата публикации

Method for producing a layer structure using a paste on the basis ofa resistive alloy

Номер: US20200051719A1
Автор: Anja Desch, Christina Modes, Jan Marien, Jessica Reitz, Jochen Langer, Melanie BAWOHL, Paul Kalemba, Roland Reul, Steffen Burk
Принадлежит: IsabellenHuette Heusler GmbH and Co KG

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

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Номер записи: 35
05-03-2015 дата публикации

TEMPERATURE MEASUREMENT APPARATUS USING NEGATIVE TEMPERATURE COEFFICIENT THERMISTOR

Номер: US20150063401A1
Автор: JIN Ho Sang, LEE Jae Ho, PARK Chan Gi, YANG Chun Suk
Принадлежит: LSIS CO., LTD.

Provided is a temperature measurement apparatus using a negative temperature coefficient (NTC) thermistor. A temperature sensor includes the NTC thermistor and a variable resistor part. A resistance value of the variable resistor part varies between a default resistance value for measuring a temperature and a temporary resistance value for determining a disconnection. An abnormal operation determination unit determines whether the NTC thermistor is disconnected, based on an output voltage of the temperature sensor when the variable resistor part has the temporary resistance value. 1. A temperature measurement apparatus using a negative temperature coefficient (NTC) thermistor , comprising:a temperature sensor comprising the NTC thermistor and a variable resistor part, in which a resistance value of the variable resistor part varies between a default resistance value for measuring a temperature and a temporary resistance value for determining a disconnection; andan abnormal operation determination unit determining whether the NTC thermistor is disconnected, based on an output voltage of the temperature sensor when the variable resistor part has the temporary resistance value.2. The temperature measurement apparatus of claim 1 , wherein the default resistance value is smaller than a resistance value of the NTC thermistor at an intermediate temperature of a temperature measurement range.3. The temperature measurement apparatus of claim 1 , wherein the variable resistor part comprises a first fixed resistor claim 1 , a second fixed resistor claim 1 , and a switch.4. The temperature measurement apparatus of claim 1 , wherein the abnormal operation determination unit determines the NTC thermistor to be disconnected claim 1 , when the intensity of the output voltage of the temperature sensor is smaller than a disconnection determination reference voltage while the variable resistor part has the temporary resistance value.5. The temperature measurement apparatus of claim 1 ...

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Номер записи: 36
04-03-2021 дата публикации

STRAIN GAUGE

Номер: US20210063259A1
Автор: Adachi Shigeyuki, ASAKAWA Toshiaki, KITAHARA Kosuke, KITAMURA Atsushi, MISAIZU Eiji
Принадлежит:

A strain gauge includes a flexible substrate; and resistors each formed of a Cr composite film. The resistors include a first resistor and a second resistor that are formed on one side of the substrate, and include a third resistor and a fourth resistor that are formed on another side of the substrate. The first resistor, the second resistor, the third resistor, and the fourth resistor constitute a Wheatstone bridge circuit. 1. A strain gauge comprising:a flexible resin substrate;{'sub': '2', 'resistors each formed of a film that includes Cr, CrN, and CrN; and'}a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being in a lower surface of the resistors,wherein an element included in the functional layer is diffused into the film, wherein the resistors include a first resistor and a second resistor that are formed on one side of the substrate; and a third resistor and a fourth resistor that are formed on another side of the substrate,wherein the first resistor, the second resistor, the third resistor, and the fourth resistor constitute a Wheatstone bridge circuit, andwherein a gauge factor of the strain gauge is 10 or more.2. The strain gauge according to claim 1 , further comprising two electrodes for applying an input voltage to the Wheatstone bridge circuit; and two other electrodes for obtaining an output voltage of the Wheatstone bridge circuit claim 1 ,wherein the two electrodes and the two other electrodes are formed on the one side of the substrate.3. The strain gauge according to claim 2 , wherein the two electrodes and the two other electrodes are electrically each connected claim 2 , through a given via hole provided in the substrate claim 2 , to a corresponding pad from among pads extending from both end portions of each of the third resistor and the fourth resistor claim 2 , andwherein each of the two electrodes and the two other electrodes is continuously formed, from the one side of the substrate, on a sidewall of ...

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Номер записи: 37
04-03-2021 дата публикации

DUAL-PORT ELECTRONIC ASSEMBLY

Номер: US20210065939A1
Автор: Li Jian-En
Принадлежит:

A dual-port electronic assembly includes a housing and two electronic components. The housing includes a body, two positioning parts and a spacer. The body includes an accommodating space, an opening and two slots. The opening is located at a side of the accommodating space. The two slots are respectively located at two opposite sides of the opening. The two positioning parts are arranged in the accommodating space, and the two positioning parts are respectively located on two sides different from the two sides the slots are arranged at. The spacer is arranged in the accommodating space and located between the two positioning parts. A positioning groove is formed between each positioning part and the spacer. Each electronic component includes a main body and two pins. The main body is located in the positioning groove. The two pins are respectively arranged 1. A dual-port electronic assembly , comprising: a body, comprising an accommodating space, an opening and two slots, wherein the opening is located at a side of the accommodating space, and the two slots are respectively located at two opposite sides of the opening;', 'two positioning parts, arranged in the accommodating space, and the two positioning parts respectively located on two sides different from the two sides the slots are arranged at; and', 'a spacer, arranged in the accommodating space and located between the two positioning parts and a positioning groove formed between each of the positioning parts and the spacer; and, 'a housing, comprisingtwo electronic components, each of the electronic components comprising a main body and two pins, wherein the main body of each of the electronic components is located in the positioning groove, and the two pins of each of the electronic components are respectively arranged in the two slots.2. The dual-port electronic assembly according to claim 1 , wherein each of the electronic components is a thermistor.3. The dual-port electronic assembly according to claim 1 ...

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Номер записи: 38
29-05-2014 дата публикации

Thin films having large temperature coefficient of resistance and methods of fabricating same

Номер: US20140146856A1
Автор: Declan Macken, Eric Walter Singleton, Huaqing Yin, Venkateswara Rao Inturi, WEI Tian
Принадлежит: SEAGATE TECHNOLOGY LLC

An apparatus comprises a head transducer and a resistive temperature sensor provided on the head transducer. The resistive temperature sensor comprises a first layer comprising a conductive material and having a temperature coefficient of resistance (TCR) and a second layer comprising at least one of a specular layer and a seed layer. A method is disclosed to fabricate such sensor with a laminated thin film structure to achieve a large TCR. The thicknesses of various layers in the laminated thin film are in the range of few to a few tens of nanometers. The combinations of the deliberately optimized multilayer thin film structures and the fabrication of such films at the elevated temperatures are disclosed to obtain the large TCR.

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Номер записи: 39
17-03-2022 дата публикации

Thermistor and method for producing said thermistor

Номер: US20220084726A1
Автор: Michael NADERER
Принадлежит: TDK Electronics AG

A thermistor having a ceramic main body, which contains a ceramic material as the main constituent. The ceramic main body has at least one electrically insulating layer. The electrically insulating layer is arranged within the ceramic main body and contains a main component which has a composition different from the ceramic material.

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Номер записи: 40
19-03-2015 дата публикации

Composite resistors

Номер: US20150077214A1
Автор: Ronald R. Gobbi
Принадлежит: Analog Devices Inc

A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

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Номер записи: 41
14-03-2019 дата публикации

Ceramic material and resistive element

Номер: US20190077677A1
Автор: Hayato Katsu, Sakyo Hirose
Принадлежит: Murata Manufacturing Co Ltd

A ceramic material has a composition represented by the formula: La- 1-x-y AE y MnO 3 in which AE is at least one of Ca and Sr; x satisfies 0<x ≤about 0.20; and y satisfies 0<y≤about 0.10.

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Номер записи: 42
18-03-2021 дата публикации

Circuit Protection Device

Номер: US20210082652A1
Автор: Kang Doo Won, SHIN A Lam
Принадлежит:

Disclosed is a circuit protection device including a case, a negative temperature coefficient thermistor which is accommodated in the case and includes a resistant heating element, a pair of electrodes installed on both sides of the resistant heating element, and a first lead wire and a second lead wire withdrawn from the pair of electrodes, respectively, and a thermal fuse which is accommodated in the case and includes a thermal fuse body and a third lead wire and a fourth lead wire connected to both ends of the thermal fuse body, respectively. Here, the second lead wire and the third lead wire are connected to each other in the case. 1. A circuit protection device comprising:a case;a negative temperature coefficient thermistor which is accommodated in the case and comprises a resistant heating element, a pair of electrodes installed on both sides of the resistant heating element, and a first lead wire and a second lead wire withdrawn from the pair of electrodes, respectively; anda thermal fuse which is accommodated in the case and comprises a thermal fuse body and a third lead wire and a fourth lead wire connected to both ends of the thermal fuse body, respectively,wherein the second lead wire and the third lead wire are connected to each other in the case.2. The circuit protection device of claim 1 , further comprising:a first pin connected to the first lead wire; anda second pin connected to the fourth lead wire,wherein a first guide groove configured to guide the first pin to be withdrawn outward from the case and a second guide groove configured to guide the second pin to be withdrawn outward from the case are formed in the case.3. The circuit protection device of claim 2 , wherein the first pin and the second pin comprise plate-shaped bodies having one sides connected to the first lead wire and the fourth lead wire claim 2 , respectively claim 2 , and each comprise at least one extending portion extending from the other side of the body with a width smaller ...

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Номер записи: 43
23-03-2017 дата публикации

RESISTOR

Номер: US20170084366A1
Автор: Chang Shih-Hsin, Chen Chih-Lung, Hsiao Sheng-Li, LEE Hwan-Wen, TSAI Dong-Mou
Принадлежит: YAGEO CORPORATION

A resistor includes a body and two connecting members. The body is made from an ohmic material and has two opposite side faces. Each of the connecting members has a side surface that has a connecting region welded to a respective one of the side faces of the body. 1. A resistor comprising:a body made from an ohmic material and having two opposite side faces; andtwo connecting members, each of which has a side surface that has a connecting region welded to a respective one of said side faces of said body.2. The resistor as claimed in claim 1 , wherein said connecting region of said side surface of each of said connecting members is welded to a respective one of said side faces of said body using an electron beam welding technique.3. The resistor as claimed in claim 2 , wherein said body and said connecting members are each cuboid in shape.4. The resistor as claimed in claim 3 , wherein said body is made from an alloy including iron claim 3 , chromium claim 3 , and aluminum.5. The resistor as claimed in claim 3 , wherein said connecting members are made from an alloy including copper.6. The resistor as claimed in claim 3 , wherein each of said side faces is rectangular in shape claim 3 , said connecting region of said side surface of each of said connecting members being rectangular in shape.7. The resistor as claimed in claim 6 , wherein each of said side faces has a first width claim 6 , said connecting region of said side surface of each of said connecting members having a second width that is identical to the first width.8. The resistor as claimed in claim 7 , wherein each of said side surfaces has a first length perpendicular to the second width claim 7 , said connecting region of said side surface of each of said connecting members having a second length perpendicular to the second width claim 7 , a ratio of the second length to the first length (H) being smaller than 1 and greater than 0.6. This application claims priority of Taiwanese Application No. 104215362 ...

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Номер записи: 44
02-04-2015 дата публикации

GAS SENSOR PACKAGE

Номер: US20150090002A1
Автор: Bae Yun Mi, HWANG Go Eun, PAIK Jee Heum
Принадлежит:

Provided is a gas sensor package, including: a first substrate including a gas inflow hole; and a gas sensing element mounted to the first substrate and including a gas sensing portion disposed to correspond to the gas inflow hole. 1. A gas sensor package , comprising:a first substrate including a gas inflow hole; anda gas sensing element mounted to the first substrate and including a gas sensing portion disposed to correspond to the gas inflow hole.2. The gas sensor package of claim 1 , wherein the gas inflow hole passes through the first substrate.3. The gas sensor package of claim 1 , wherein the first substrate further comprises metal patterns claim 1 , and the gas sensing element is bonded to the metal patterns.4. The gas sensor package of claim 3 , further metal filling portions connected to the respective metal patterns by passing through the first substrate.5. The gas sensor package of claim 4 , wherein each of the metal filling portions protrudes from a surface of the first substrate.6. The gas sensor package of claim 4 , further comprising a second substrate connected to the first substrate via the metal filling portions.7. The gas sensor package of claim 6 , further comprising a gas inflow portion formed between the first substrate and the second substrate to communicate with the gas inflow hole.8. The gas sensor package of claim 1 , further comprising an output change portion mounted on the first substrate to change an output mode of the gas sensing element.9. The gas sensor package of claim 8 , wherein the output change portion is a fixed resistance element or an NTC (Negative Temperature Coefficient) thermistor.10. The gas sensor package of claim 1 , further comprising a molding portion formed on the gas sensing element.11. The gas sensor package of claim 10 , wherein the molding portion is formed to bury the gas sensing element and an upper surface of the first substrate.12. The gas sensor package of claim 10 , wherein the molding portion is applied ...

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Номер записи: 45
19-06-2014 дата публикации

Resistor Component

Номер: US20140167911A1
Автор: Ho Chien-Hung, Hsiao Shen-Li, Wei Shih-Long
Принадлежит: VIKING TECH CORPORATION

A resistor component is provided, including a ceramic bar having a film applied thereon, a protection layer formed on the film in a middle portion of the ceramic bar, an end plating layer formed on the film at two ends of the ceramic bar, an insulation layer formed on the protection layer, and a color coded marking formed on the insulation layer that indicates the resistance of the resistor component. The end plating layer is formed by a barrel plating method and includes copper, tin, nickel and a combination thereof. The resistor component thus has a low cost and is manufactured by a simple process, simultaneously avoids the occurrence of pores or incompletely sealed join that may be caused by the prior method. Therefore the resistor component has high reliability. 1. A resistor component , comprising:a ceramic bar having a film applied thereon;a protection layer formed on the film in a middle portion of the ceramic bar;an end plating layer formed on the film at two ends of the ceramic bar;an insulation layer formed on the protection layer; anda color coded marking formed on the insulation layer.2. The resistor component of claim 1 , wherein the film acts as a resistive layer.3. The resistor component of claim 1 , wherein the end plating layer is formed on the ceramic bar by a barrel plating method.4. The resistor component of claim 1 , wherein the end plating layer comprises copper claim 1 , tin claim 1 , nickel claim 1 , or a combination thereof.5. The resistor component of claim 1 , wherein the insulation layer is formed before the protection layer claim 1 , and the resistor component has a resistance that is adjusted by cutting the film.6. The resistor component of claim 5 , wherein the film is cut by a laser cutting machine or a laser slicer.7. The resistor component of claim 1 , wherein the protection layer is made of epoxy resin.8. The resistor component of claim 1 , wherein the color coded marking is made of epoxy resin. 1. Field of the InventionThis ...

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Номер записи: 46
02-04-2015 дата публикации

Metal nitride film for thermistor, process for producing same, and thermistor sensor of film type

Номер: US20150092820A1
Автор: Hiroshi Tanaka, Hitoshi Inaba, Kazutaka Fujiwara, Noriaki Nagatomo, Toshiaki Fujita
Принадлежит: Mitsubishi Materials Corp

Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: Ti x Al y N z (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

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Номер записи: 47
25-03-2021 дата публикации

CIRCUIT PROTECTION DEVICE

Номер: US20210090838A1
Автор: Kang Doo Won, SHIN A Lam
Принадлежит:

Disclosed is a circuit protection device including a case, a first negative temperature coefficient thermistor which is accommodated in the case and includes a first resistant heating element, a pair of electrodes installed on both sides of the first resistant heating element, and a first lead wire and a second lead wire withdrawn from the pair of electrodes, respectively, a thermal fuse which is accommodated in the case and includes a thermal fuse body and a third lead wire and a fourth lead wire connected to both ends of the thermal fuse body, respectively, and a second negative temperature coefficient thermistor which is accommodated in the case and includes a second resistant heating element, a pair of electrodes installed on both sides of the second resistant heating element, and a fifth lead wire and a sixth lead wire withdrawn from the pair of electrodes, respectively. 1. A circuit protection device comprising:a case;a first negative temperature coefficient thermistor which is accommodated in the case and comprises a first resistant heating element, a pair of electrodes installed on both sides of the first resistant heating element, and a first lead wire and a second lead wire withdrawn from the pair of electrodes, respectively;a thermal fuse which is accommodated in the case and comprises a thermal fuse body and a third lead wire and a fourth lead wire connected to both ends of the thermal fuse body, respectively; anda second negative temperature coefficient thermistor which is accommodated in the case and comprises a second resistant heating element, a pair of electrodes installed on both sides of the second resistant heating element, and a fifth lead wire and a sixth lead wire withdrawn from the pair of electrodes, respectively,wherein the second lead wire and the third lead wire are connected to each other, and the fourth lead wire and the fifth lead wire are connected to each other in the case.2. The circuit protection device of claim 1 , further ...

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Номер записи: 48
09-04-2015 дата публикации

SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR

Номер: US20150097650A1
Автор: ITOH Kazuhiko, SHIMURA Yoshikazu
Принадлежит:

A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (BaBiARE)(TiTM)O(1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007≦x≦0.125 (2), x Подробнее

Номер записи: 49
06-04-2017 дата публикации

CONDUCTIVE POLYMER ELECTRONIC DEVICES WITH SURFACE MOUNTABLE CONFIGURATION AND METHODS FOR MANUFACTURING SAME

Номер: US20170098495A1
Автор: BOURNS Gordon L., Chu Stelar, Grindell Daniel E., Huang David, KELLY John, Meijer Erik
Принадлежит: BOURNS, INC.

Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress. In other embodiments, these advantages are achieved by having at least one cross-conductor in physical contact with a metallized anchor pad on the first insulation layer. 1130. A method of manufacturing a surface-mountable polymer PTC device () , comprising:(a) forming a matrix of surface-mountable electronic devices by:{'b': '132', '(i) laminating an active polymer layer () between first and second metal foil layers;'}{'b': 134', '136, '(ii) removing a portion of the first foil layer to form an array of first electrodes () and removing a portion of the second foil layer to form an array of second electrodes ();'}{'b': 142', '144', '134', '136, '(iii) applying a first insulation layer () and a second insulation layer () on the array of first and second electrodes (, ), respectively;'}{'b': '142', '(iv) applying a first metallization layer on the first insulation layer ();'}{'b': '144', '(v) applying a second metallization layer on the second insulation layer ();'}{'b': 152', '136', '134', '138', '142', '154', '134', '136', '140', '144, '(vi) forming a first array of metallized vias (), each having metallization ...

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Номер записи: 50
08-04-2021 дата публикации

CIRCUIT PROTECTION DEVICE

Номер: US20210104884A1
Автор: Kang Doo Won, SHIN A Lam
Принадлежит:

Disclosed is a circuit protection device including a case, a negative temperature coefficient thermistor accommodated in the case and including a resistant heating element, a pair of electrodes installed on both sides of the resistant heating element, and a first thermistor lead wire and a second thermistor lead wire withdrawn from the pair of electrodes, respectively, and a fuse accommodated in the case and including a fuse body and a first fuse lead wire and a second fuse lead wire connected to both ends of the fuse body, respectively. Here, the fuse body includes a fuse rod with a plating layer formed thereon and a pair of fuse caps coupled to both ends of the fuse rod and having conductivity, and the first fuse lead wire and the second fuse lead wire are bonded to the pair of fuse caps, respectively. 1. A circuit protection device comprising:a case;a negative temperature coefficient thermistor accommodated in the case and comprising a resistant heating element, a pair of electrodes installed on both sides of the resistant heating element, and a first thermistor lead wire and a second thermistor lead wire withdrawn from the pair of electrodes, respectively; anda fuse accommodated in the case and comprising a fuse body and a first fuse lead wire and a second fuse lead wire connected to both ends of the fuse body, respectively,wherein the fuse body comprises a fuse rod with a plating layer formed thereon and a pair of fuse caps coupled to both ends of the fuse rod and having conductivity, and the first fuse lead wire and the second fuse lead wire are bonded to the pair of fuse caps, respectively, andwherein the second thermistor lead wire and the first fuse lead wire are connected to each other in the case.2. The circuit protection device of claim 1 , further comprising:a first pin connected to the first thermistor lead wire; anda second pin connected to the second fuse lead wire,wherein a first guide groove configured to guide the first pin to be withdrawn outward ...

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Номер записи: 51
19-04-2018 дата публикации

Platinum temperature sensor element

Номер: US20180106651A1
Автор: Hideki Fujiwara, Ryusuke SUZUKI, Tatsuya Kawahara
Принадлежит: Koa Corp

Internal electrodes, a protective film, and protective films covering the top parts of internal electrode sides of lead wires are formed on a top surface of a substrate of a temperature sensor element, thereby making the overall shape a quadrangular prism and the transverse cross-section nearly a square even at any portion in the axial direction. A heating part of the temperature sensor element is provided near the center along the length, the height, and the width of the element, thereby preventing deviation of heat generation and stabilizing heat release to the lead wires. This allows the temperature sensor element to suppress fluctuation in detected temperatures due to mounting angle.

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Номер записи: 52
19-04-2018 дата публикации

Platinum temperature sensor element

Номер: US20180106687A1
Автор: Katsuya Miura, Ryusuke SUZUKI, Takumi ASHIKAWA
Принадлежит: Koa Corp

A temperature sensor element has such a structure as, when reinforcing lead wires on internal electrodes with a paste, one side surface of each of the lead wires is covered with a reinforcement paste and the other side surface is not covered with the reinforcement paste without covering the entire lead wires welded and connected to the internal electrodes. This allows elimination of cause of cracks generating, thereby securing sufficient joining strength and reinforcement of conductivity of the internal electrodes and the lead wires, and securing connection strength between the lead wires and the internal electrodes.

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Номер записи: 53
21-04-2016 дата публикации

ELECTRICAL HEATER

Номер: US20160113063A1
Автор: "OConnor Jason Daniel Harold", Howe Peter Richard, Scott Ian James
Принадлежит:

An electrical heater comprising; a first conductor, a second conductor, and a fluoropolymer heating element disposed between the first conductor and the second conductor, and a temperature regulation element disposed between the fluoropolymer heating element and the second conductor, wherein the fluoropolymer heating element comprises an electrically conductive material distributed within a fluoropolymer, and wherein the electrical heater comprises a stack, the first conductor, the second conductor, the fluoropolymer heating element, and the temperature regulation element comprising layers of the stack. 134-. (canceled)35. An electrical heater comprising;a first conductor,a second conductor,a fluoropolymer heating element disposed between the first conductor and the second conductor, anda temperature regulation element disposed between the fluoropolymer heating element and the second conductor;wherein the fluoropolymer heating element comprises an electrically conductive material distributed within a fluoropolymer, andwherein the electrical heater comprises a stack, the first conductor, the second conductor, the fluoropolymer heating element, and the temperature regulation element comprising layers of the stack.36. An electrical heater according to claim 35 , wherein the fluoropolymer is a perfluoroalkoxy copolymer.37. An electrical heater according to claim 36 , wherein the perfluoroalkoxy copolymer is a copolymer of tetrafluoroethylene and perfluoromethyl vinyl ether or of tetrafluoroethylene and perfluoropropyl vinyl ether.38. An electrical heater according to wherein the electrically conductive material comprises conductive particles.39. An electrical heater according to wherein the conductive particles are selected from carbon black claim 38 , graphite claim 38 , graphene claim 38 , carbon fibres claim 38 , carbon nanotubes claim 38 , metal powders claim 38 , metal strand and metal coated fibres.40. An electrical heater according to wherein the fluoropolymer ...

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Номер записи: 54
02-04-2020 дата публикации

Additive manufactured resistance temperature detector

Номер: US20200103288A1
Автор: Brandon HEIN, James A. Mullen, Reid Philip Beery
Принадлежит: Goodrich Corp

A method of making a resistance temperature detector includes additively manufacturing a conductive ink on a flexible substrate and applying the resistance temperature detector to a geometrically complex surface of a component requiring heating, or directly additive manufacturing the resistance temperature detector onto that surface.

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Номер записи: 55
02-04-2020 дата публикации

PTC DEVICE

Номер: US20200105443A1
Автор: LEE Wen Feng, TSENG Chun Teng, WANG DAVID SHAU CHEW
Принадлежит:

A PTC device comprises a current and temperature sensing element, a first insulating layer, a second insulating layer, a first electrode layer and a second electrode layer. The current and temperature sensing device is a laminated structure comprising a first conductive layer, a second conductive layer and a PTC material layer. The first and second conductive layers are disposed on first and second surfaces of the PTC material layer, respectively. The second surface is opposite to the first surface. The first and second insulating layers are disposed on the first and second conductive layers, respectively. The first electrode layer is disposed on the first insulating layer and electrically connects to the first conductive layer. The second electrode layer is disposed on the second insulating layer and electrically connects to the second conductive layer. Corners of the current and temperature sensing device are provided with insulating members. 1. A PTC device , comprising:a current and temperature sensing element being a laminated structure of a first electrically conductive layer, a second electrically conductive layer and a PTC material layer, the first electrically conductive layer being disposed on a first surface of the PTC material layer, the second electrically conductive layer being disposed on a second surface of the PTC material layer, the second surface being opposite to the first surface;a first insulating layer disposed on the first electrically conductive layer;a second insulating layer disposed on the second electrically conductive layer;a first electrode layer disposed on the first insulating layer and electrically connecting to the first electrically conductive layer;a second electrode layer disposed on the second insulating layer and electrically connecting to the second electrically conductive layer;wherein corners of the current and temperature sensing element are provided with insulating members,wherein the first insulating layer, the first ...

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Номер записи: 56
09-06-2022 дата публикации

THERMISTOR ELEMENT AND ELECTROMAGNETIC WAVE SENSOR

Номер: US20220181050A1
Автор: Aoki Susumu, HARA Shinji, KOMURA Eiji, Ohta Naoki, SHIROKAWA Maiko
Принадлежит: TDK Corporation

A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode. 1. A thermistor element comprising:a thermistor film;a first electrode provided in contact with one surface of the thermistor film; anda pair of second electrodes provided in contact with an other surface of the thermistor film, whereinthe thermistor film is provided to cover a periphery of the first electrode.2. The thermistor element according to claim 1 , wherein each of regions where the pair of the second electrodes contacts the thermistor film locates in a region where the first electrode contacts the thermistor film in a plan view.3. The thermistor element according to claim 1 , whereineach of the second electrodes has a structure in which a first conductive layer and a second conductive layer are laminated on the other surface of the thermistor film in this order,the first conductive layer is made of an alloy containing one or more selected from: platinum, gold, palladium, ruthenium, silver, rhodium, iridium, and osmium, the second conductive layer is made of at least one selected from: aluminum, tungsten, titanium, tantalum, titanium nitride, tantalum nitride, chromium nitride, and zirconium nitride.4. The thermistor element according to claim 2 , whereineach of the second electrodes has a structure in which a first conductive layer and a second conductive layer are laminated on the other surface of the thermistor film in this order,the first conductive layer is made of an alloy containing one or more selected from: platinum, gold, palladium, ruthenium, silver, rhodium, iridium, and osmium,the second conductive layer is made of at least one selected from: aluminum, tungsten, titanium, tantalum, titanium nitride, tantalum nitride, chromium nitride, and ...

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Номер записи: 57
07-05-2015 дата публикации

LIGHT INCIDENT ANGLE CONTROLLABLE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20150124513A1
Автор: PARK Jinjoo, Yong Kijung
Принадлежит:

Disclosed herein is a method of changing characteristics of an electronic device, including the steps of: applying light to an electronic device through a plurality of media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; and changing an incident angle of light applied the electronic device to adjust the amount of incident light. There is provided a method of providing light incident angle dependency by a simple procedure of accumulating additional media in various electronic devices. In the method, the light incident angle selectivity of the electronic device can be maintained even when the inclination angle of the device is changed depending on the axis parallel to the incident direction of light even though the incident direction thereof is fixed. This means that the performance of the device can be controlled only by changing the inclination angle of the device without greatly changing the dynamic state of the device. Further, since the movement speed of photons is higher than that of electrons and the signal interference of photons is lower than that of electrons, an additional effect of increasing the operating speed of the device or decreasing the size of the device can be expected. 1. A method of changing characteristics of an electronic device , comprising the steps of:applying light to an electronic device through a plurality of media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; andchanging an incident angle of light applied to the electronic device to adjust the amount of incident light.2. The method of claim 1 , wherein a first medium having a first refractive index is disposed on the surface of the electronic device claim 1 , and the light penetrates a second medium having a second refractive index larger than the ...

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Номер записи: 58
24-07-2014 дата публикации

Resistance heating element and heating member and fusing device employing the same

Номер: US20140205336A1
Автор: Dong-Earn Kim, Dong-Ouk Kim, Ha-Jin Kim, Kun-Mo Chu, Min-Jong Bae, Sang-Eui Lee, Sung-Hoon Park, Yoon-Chul Son
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A resistance heating element includes a positive temperature coefficient resistance heating layer having a positive temperature coefficient, and a negative temperature coefficient resistance heating layer, which is connected to the positive temperature coefficient resistance heating layer and has a negative temperature coefficient.

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Номер записи: 59
05-05-2016 дата публикации

ADJUSTABLE INTERNAL GATE RESISTOR

Номер: US20160126949A1
Автор: Lim Hock Poh
Принадлежит:

The disclosure describes a method for controlling a voltage that is applied to a voltage controlled circuit element. In one example, the method includes controlling, by a semiconductor light source, a resistance value of a photoresistor coupled to a voltage controlled circuit element. The method includes applying, by a gate driver and via the photoresistor, a voltage to the voltage controlled circuit element. The method further includes controlling the voltage applied to the voltage controlled circuit element in order to control a current through the voltage controlled circuit element. In some examples, controlling the voltage applied to the voltage controlled circuit element may be accomplished by controlling the resistance value of the photoresistor in order to control a voltage drop across the photoresistor. Circuits that implement the method are also described. 1. A method comprising:controlling, by a semiconductor light source, a resistance value of a photoresistor coupled to a voltage controlled circuit element; andapplying, by a gate driver and via the photoresistor, a voltage to the voltage controlled circuit element to drive the voltage controlled circuit element to one of an ON state or an OFF state,wherein controlling the resistance value of the photoresistor controls a voltage drop across the photoresistor to control the voltage applied at the voltage controlled circuit element so as to control a current through the voltage controlled circuit element.2. The method of claim 1 , wherein controlling the resistance value of the photoresistor comprises setting a fixed resistance value.3. The method of claim 2 , wherein setting the fixed resistance value comprises: generating claim 2 , by the semiconductor light source claim 2 , an amount of light; and delivering the amount of light to the photoresistor.4. The method of claim 1 , wherein controlling the resistance value of the photoresistor comprises setting one of a TURN ON resistance value or a TURN OFF ...

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Номер записи: 60
14-05-2015 дата публикации

POLYMERIC POSITIVE TEMPERATURE COEFFICIENT THERMISTOR

Номер: US20150132568A1
Автор: Wang Hai-feng
Принадлежит:

A polymeric positive temperature coefficient thermistor comprises a positive temperature coefficient complex material as a middle layer and an electrode covering a surface of the positive temperature coefficient complex material. The positive temperature coefficient complex material comprises a crystalline polymer, a titanium carbide nanoparticle powder, and a titanium carbide microparticle powder. A mass ratio of the titanium carbide nanoparticle powder to the titanium carbide microparticle powder ranges from 0.1:9.9 to 1.0:9.90. The titanium carbide nanoparticle powder comprises titanium carbide nanoparticles and a particle size of the titanium carbide nanoparticles is from 1 to 50 nm. The titanium carbide microparticle powder comprises titanium carbide microparticles and a particle size of the titanium carbide microparticles is from 0.1 to 10 μm. 1. A polymeric positive temperature coefficient thermistor comprising:a positive temperature coefficient complex material as a middle layer and an electrode covering a surface of the positive temperature coefficient complex material; the positive temperature coefficient complex material comprising:crystalline polymer;titanium carbide nanoparticle powder; andtitanium carbide microparticle powder;wherein a mass ratio of the titanium carbide nanoparticle powder to the titanium carbide microparticle powder is from 0.1:9.9 to 1.0:9.9;the titanium carbide nanoparticle powder comprises titanium carbide nanoparticles and a particle size of the titanium carbide nanoparticles ranges from 1 to 50 nanometers; andthe titanium carbide microparticle powder comprises titanium carbide microparticles and a particle size of the titanium carbide microparticles is from 0.1 to 10 micrometers.2. The polymeric positive temperature coefficient thermistor as claimed in claim 1 , wherein the crystalline polymer comprises high density polyethylene claim 1 , low density polyethylene claim 1 , or the combination thereof.3. The polymeric positive ...

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Номер записи: 61
27-05-2021 дата публикации

MAGNETIC SENSOR

Номер: US20210156933A1
Автор: MAKINO Kenzo, OTA Norikazu
Принадлежит: TDK Corporation

A magnetic sensor includes at least one MR element and a coil. The coil includes at least one conductor portion. The at least one conductor portion is each located at a position such that a partial magnetic field generated by the conductor portion is applied to one of the at least one MR element, the one corresponding to the conductor portion, and extends along an imaginary curve curving to protrude in a direction away from the corresponding MR element. 1. A magnetic sensor comprising:at least one magnetoresistive element whose resistance changes with an external magnetic field; anda coil that generates a coil magnetic field, the coil magnetic field being a magnetic field to be applied to the at least one magnetoresistive element, whereinthe coil includes at least one conductor portion,the coil magnetic field includes a partial magnetic field generated by each of the at least one conductor portion, andthe at least one conductor portion is each located at a position such that the partial magnetic field generated by the conductor portion is applied to one of the at least one magnetoresistive element, the one corresponding to the conductor portion, and extends along an imaginary curve curving to protrude in a direction away from the corresponding magnetoresistive element.2. The magnetic sensor according to claim 1 , further comprising a support member that supports the at least one magnetoresistive element claim 1 , whereinthe support member includes a top surface opposed to the at least one magnetoresistive element and a bottom surface located on a side opposite to the top surface.3. The magnetic sensor according to claim 2 , wherein:the top surface of the support member includes a curved surface portion curving to protrude in a direction away from the bottom surface of the support member; andthe at least one magnetoresistive element is located on the curved surface portion.4. The magnetic sensor according to claim 3 , wherein:the at least one magnetoresistive element ...

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Номер записи: 62
16-04-2020 дата публикации

Electronic Component for Limiting the Inrush Current, and Use of an Electronic Component

Номер: US20200118718A1
Автор: Alfred Hofrichter, Franz Rinner, Volker Wischnat
Принадлежит: EPCOS AG

An electronic component is disclosed. In an embodiment, an electronic component includes at least one NTC element and at least two electrically conductive contact elements, wherein the NTC element is electrically conductively connected to a respective contact element via a connection material, and wherein a coefficient of thermal expansion of the contact elements is adapted to a coefficient thermal expansion of the NTC element.

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Номер записи: 63
16-04-2020 дата публикации

Cable

Номер: US20200119547A1
Автор: Hsiu Che Yen, Pin Syuan Li, Tao Te CHANG, Yung Hsien CHANG, Zhen Yu Dong
Принадлежит: Polytronics Technology Corp

A cable comprises a power conductor, a data conductor and a first PTC device. The power conductor is configured to transmit electrical power between a source and a sink. The data conductor is configured to transmit data between the source and the sink. The first PTC device is coupled to the data conductor and its resistance increases drastically to decrease current flowing through the data conductor if a temperature of the first PTC device exceeds a first trip temperature. The first trip temperature is 55-80° C. The resistance of the PTC device is larger than 20kΩ at 85° C. and larger than 80kΩ at 100° C. A current flowing through the data conductor does not exceed 20 mA.

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Номер записи: 64
02-05-2019 дата публикации

POSITIVE TEMPERATURE COEFFICIENT DEVICES WITH OXYGEN BARRIER PACKAGES

Номер: US20190131039A1
Автор: Bhatawadekar Kedar, Pineda Martin G., Yu Dong
Принадлежит: LITTELFUSE, INC.

A method of forming a positive temperature coefficient (PTC) device, the method including providing a core formed of a PTC material, the core having an electrode disposed on a first surface thereof and a second electrode disposed on a second surface thereof, connecting a first lead element to the first electrode, applying an oxygen barrier epoxy to at least portions of the core, the first electrode, the second electrode, and the first lead element, and curing the oxygen barrier epoxy to form an oxygen barrier package surrounding at least portions of the core, the first electrode, the second electrode, and the first lead element. 1. A positive temperature coefficient (PTC) device comprising:a core formed of a PTC material;a first electrode disposed on a first surface of the core and a second electrode disposed on a second surface of the core;a first lead element connected to the first electrode; andan oxygen barrier package surrounding at least portions of the core, the first electrode, the second electrode, and the first lead element.2. The PTC device of claim 1 , wherein the oxygen barrier package is formed of an oxygen barrier epoxy.3. The PTC device of claim 1 , wherein portions of the first lead element and the second electrode are exposed for facilitating connections to other electrical components.4. The PTC device of claim 1 , wherein the first electrode comprises a first portion and a second portion separated by a gap claim 1 , the first lead element connected to the first portion claim 1 , the PTC device further comprising a second lead element connected to the second portion.5. The PTC device of claim 4 , further comprising a solderable coating disposed on at least one of the first and second lead elements.6. The PTC device of claim 1 , further comprising a second lead element connected to the second electrode claim 1 , wherein portions of the first and second lead elements are exposed for facilitating connections to other electrical components.7. The PTC ...

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Номер записи: 65
17-05-2018 дата публикации

CHIP RESISTOR AND CHIP RESISTOR ASSEMBLY

Номер: US20180137957A1
Автор: Choi Woo Jin
Принадлежит:

A chip resistor includes a base substrate having first and second surfaces opposing each other. First and second resistor layers are separated from each other and are on the first surface of the base substrate. First and second terminals are on opposing end portions of the base substrate, respectively, and are connected to first sides of the first and second resistor layers, respectively. Third and fourth terminals are between the first and second terminals, and are respectively connected to second sides of the first and second resistor layers that respectively oppose the first sides of the first and second resistor layers. 1. A chip resistor comprising:a base substrate having first and second surfaces opposing each other;first and second resistor layers separated from each other and on the first surface of the base substrate;first and second terminals on opposing end portions of the base substrate, respectively, and connected to first sides of the first and second resistor layers, respectively; andthird and fourth terminals between the first and second terminals, and respectively connected to second sides of the first and second resistor layers that respectively oppose the first sides of the first and second resistor layers.2. The chip resistor of claim 1 , wherein the first resistor layer extends from the first terminal and includes a portion that protrudes to connect to the third terminal claim 1 , and the second resistor layer extends from the second terminal and includes a portion that protrudes to connect to the fourth terminal.3. The chip resistor of claim 1 , wherein the third terminal covers the second side of the first resistor layer claim 1 , and the fourth terminal covers the second side of the second resistor layer.4. The chip resistor of claim 1 , wherein a first resistance value between the first and third terminals is different from a second resistance value between the second and fourth terminals.5. The chip resistor of claim 1 , further comprising: ...

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Номер записи: 66
08-09-2022 дата публикации

Sensor Element and Method for Manufacturing a Sensor Element

Номер: US20220283040A1
Автор: Ihle Jan, Kirsten Lutz Heiner, Stendel Thomas, Weidenfelder Anke
Принадлежит:

In an embodiment a sensor element includes a carrier having an electrically insulating material, a top side and a bottom side, an NTC thermistor arranged on the top side of the carrier and at least two first electrodes configured for electrically contacting the sensor element, wherein the first electrodes are arranged on the top side of the carrier, wherein the sensor element is configured to measure a temperature, and wherein the sensor element is configured for direct integration in an electrically insulating manner. 127.-. (canceled)28. A sensor element comprising:a carrier comprising an electrically insulating material, a top side and a bottom side;an NTC thermistor arranged on the top side of the carrier; andat least two first electrodes configured for electrically contacting the sensor element,wherein the first electrodes are arranged on the top side of the carrier,wherein the sensor element is configured to measure a temperature, andwherein the sensor element is configured for direct integration in an electrically insulating manner.29. The sensor element according to claim 28 , wherein the sensor element is configured for the direct integration onto a conductor path of a power module in the electrically insulating manner.30. The sensor element according to claim 28 , wherein the electrically insulating material of the carrier comprises a ceramic based on AlN claim 28 , SiN claim 28 , AlO claim 28 , low temperature cofired ceramics (LTCC) or Zirconia Toughened Aluminum Oxide (ZTA) materials.31. The sensor element according to claim 28 , wherein coefficients of thermal expansion of a carrier material and a material of the NTC thermistor are matched.32. The sensor element according to claim 28 , wherein the NTC thermistor is an SMD NTC thermistor claim 28 , and wherein the sensor element further comprises a protective layer arranged at least around the NTC thermistor.33. The sensor element according to claim 28 , wherein a respective first electrode comprises a ...

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Номер записи: 67
09-05-2019 дата публикации

PTC CIRCUIT PROTECTION DEVICE AND METHOD OF MAKING THE SAME

Номер: US20190139684A1
Автор: CHEN Jack Jih-Sang, JIANG Chang-Hung
Принадлежит:

A PTC circuit protection device adapted to be mounted on a substrate, includes: a PPTC component; a first electrically conductive unit including a first electrically conductive member and a first conductive pin member that has a first distal end to be in contact with the substrate, a first stand-off height from the first electrically conductive member to the first distal end being not less than 0.1 mm; and a second electrically conductive unit including a second electrically conductive member and a second conductive pin member that has a second distal end to be in contact with the substrate, a second stand-off height from the first electrically conductive member to the second distal end being not less than 0.1 mm. 1. A PTC circuit protection device adapted to be mounted on a substrate , comprising:a polymer positive temperature coefficient (PPTC) component that includesa PTC polymeric layer having two opposite surfaces, andfirst and second electrodes respectively disposed on said two opposite surfaces of said PTC polymeric layer; a first electrically conductive member disposed on and electrically connected to said first electrode oppositely of said PTC polymeric layer, and having an end portion, and', 'a first conductive pin member extending from said end portion of said first electrically conductive member toward the substrate, and having a first distal end which is distal from said end portion of said first electrically conductive member and is to be in contact with the substrate, wherein a first stand-off height from said first electrically conductive member to said first distal end ranges from 1.0 mm to 2.0 mm; and, 'a first electrically conductive unit that includes'} a second electrically conductive member disposed on and electrically connected to said second electrode oppositely of said PTC polymeric layer, and having an end portion, and', 'a second conductive pin member extending from said end portion of said second electrically conductive member toward the ...

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Номер записи: 68
04-06-2015 дата публикации

RADIAL-LEADED OVER-CURRENT PROTECTION DEVICE

Номер: US20150155080A1
Автор: CHU FU HUA, SHA YI AN, TSAI Tong Cheng, YANG En Tien
Принадлежит: POLYTRONICS TECHNOLOGY CORP.

A radial-leaded over-current protection device includes a PTC device, first and second electrode leads and an insulating encapsulation layer. The PTC device has first and a second conductive layers and a PTC material layer therebetween. The PTC material layer has a resistivity less than 0.18 Ω-cm and includes crystalline polymer and conductive ceramic filler. The ceramic filler has a resistivity less than 500 Ω-cm and is 35-65% by volume of the PTC material layer. The first electrode lead has an end connecting to the first conductive layer, whereas the second electrode lead has an end connecting to the second conductive layer. The insulating encapsulation layer wraps the PTC device and the ends of the conductive layers. The radial-leaded over-current protection device at 25° C. has a value of hold current thereof divided by an area of the PTC device ranging from 0.027-0.3 A/mm. Each electrode lead has a cross-sectional area of at least 0.16 mm.

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Номер записи: 69
04-06-2015 дата публикации

ELECTRIC HEATER

Номер: US20150156820A1
Автор: GRIES Jean-Philippe, Schmittheisler Christophe
Принадлежит:

An electric heater for an automobile vehicle, having at least one heating element and at least one circuit board, with the circuit board being connected to a control unit and/or to a power supply and having at least one contact area through which an electrical connection between a heating element and a control unit and/or a power supply can be realized, the heating element possessing at least one PTC-heating element, with the heating element being connected to the circuit board with at least one connecting element, whereby the first connecting element features at least one protruding element and the contact area offering at least one through hole, with the at least one protruding element being insertable into the at least one through hole of the contact area. 1. An electric heater for a vehicle , the electric heater comprising:at least one heating element;at least one circuit board connected to a control unit and/or to a power supply; andat least one contact area through which an electrical connection between a heating element and a control unit and/or a power supply is realized,wherein the heating element has at least one PTC-heating element,wherein the heating element is connected to the circuit board with at least one connecting element,wherein the at least one connecting element has at least one protruding element,wherein the contact area has at least one through hole, andwherein the at least one protruding element is insertable into the at least one through hole of the contact area.2. The electric heater as claimed in claim 1 , wherein a cross-section of the through hole is smaller than a cross-section of the protruding element.3. The electric heater as claimed in claim 1 , wherein the contact area has a multitude of through holes claim 1 , which are arranged in either a regular pattern or an irregular pattern claim 1 , and wherein the first connecting element has a plurality of protruding elements claim 1 , and wherein a quantity of protruding elements is ...

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Номер записи: 70
02-06-2016 дата публикации

THERMISTOR ELEMENT

Номер: US20160155546A1
Автор: MIURA Tadamasa, Tashiro Eisuke, YANAGIHARA Jun
Принадлежит:

In an thermistor element, a main body includes a first thermistor section and a second thermistor section stacked on the first thermistor section. A first internal electrode and a second internal electrode vertically sandwich the first thermistor section. A second internal electrode and a third internal electrode vertically sandwich the second thermistor section. A temperature coefficient αof a portion between the first and second internal electrodes in the first thermistor section is different from a temperature coefficient αof a portion between the second and third electrodes in the second thermistor section. 1. A thermistor element comprising:a main body including a first thermistor section with first and second principal surfaces opposed to each other, and a second thermistor section with third and fourth principal surfaces opposed to each other, the second thermistor section stacked on the first thermistor section so that the third principal surface contacts with the second principal surface;a first electrode located on the first principal surface and exposed externally from the main body;a second electrode interposed between the second and third principal surfaces and exposed externally from the main body, the second electrode overlapped with the first electrode in planar view from a first direction of the second thermistor section to the first thermistor section; anda third electrode located on the fourth principal surface and exposed externally from the main body, the third electrode overlapped with the second electrode in planar view from the first direction; wherein{'sub': TH1', 'TH2, 'a temperature coefficient αof a portion between the first and second electrodes in the first thermistor section is different from a temperature coefficient αof a portion between the second and third electrodes in the second thermistor section.'}2. The thermistor element according to claim 1 , whereinthe main body has a cuboid or substantially cuboid shape including first and ...

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Номер записи: 71
02-06-2016 дата публикации

Resistor circuit with temperature coefficient compensation

Номер: US20160155547A1
Автор: YUAN Zhiyong
Принадлежит: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

The present invention discloses a resistor circuit with temperature coefficient compensation, which comprises a first series resistor composed of a first resistor and a second resistor interconnected in series, and a second parallel resistor composed of a third resistor and a fourth resistor interconnected in series, with the first series resistor and the second parallel resistor interconnected in series, wherein the first resistor and the second resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the first series resistor offset each other, and the third resistor and the fourth resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the second parallel resistor offset each other. A secondary temperature coefficient compensation function is provided between the first series resistor and the second parallel resistor of the present invention, which can make the resistor circuit keep the temperature coefficient compensation function in any combination of process corner variations and able to achieve the high-precision resistance at any process corners. 1. A resistor circuit with temperature coefficient compensation , comprising a first resistor array and a second resistor array connected in series;Wherein the first resistor array is composed of a first resistor and a second resistor interconnected in series, and the second resistor array is composed of a third resistor and a fourth resistor interconnected in parallel;wherein the first resistor and the third resistor have positive temperature coefficient, and the second resistor and the fourth resistor have negative temperature coefficient,wherein the first resistor array forms a first-order temperature compensation by the first resistor and the second resistor in series connection; the second resistor array forms a first-order temperature compensation by ...

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Номер записи: 72
15-09-2022 дата публикации

CIRCUIT PROTECTION DEVICE

Номер: US20220293304A1
Автор: Kang Doo Won, MUN Hwang Je, SHIN A Lam
Принадлежит:

The present invention relates to a circuit protection device including: a device comprising a heating element configured to comprise a body and a pair of electrodes formed on the body, and a pair of lead wires connected, respectively, to the pair of electrodes; and a case having an independent accommodating space formed therein to accommodate at least the heating element, wherein the case includes at least one heat insulating layer disposed in the vicinity of the accommodating space. 1. A circuit protection device comprising:a device comprising a heating element configured to comprise a body and a pair of electrodes formed on the body, and a pair of lead wires connected, respectively, to the pair of electrodes; anda case having an independent accommodating space formed therein to accommodate at least the heating element,wherein the case includes at least one heat insulating layer disposed in the vicinity of the accommodating space.2. The circuit protection device of claim 1 , wherein the heat insulating layer is any one of an air layer claim 1 , a vacuum layer claim 1 , and a heat insulating material layer.3. The circuit protection device of claim 1 , wherein the device is a negative temperature coefficient (NTC) thermistor device.4. The circuit protection device of claim 1 , wherein the case comprises a housing having an open lower surface to allow the device to be inserted into the accommodating space claim 1 , and a housing cover configured to close the open lower surface of the housing.5. The circuit protection device of claim 4 , wherein the housing has a rectangular parallelepiped shape.6. The circuit protection device of claim 5 , wherein the heat insulating layer is formed on at least one of a front side and a rear side of the accommodating space in the housing.7. The circuit protection device of claim 5 , wherein the heat insulating layer is formed on an upper side of the accommodating space in the housing.8. The circuit protection device of claim 5 , ...

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Номер записи: 73
16-05-2019 дата публикации

VERTICALLY-CONSTRUCTED, TEMPERATURE-SENSING RESISTORS AND METHODS OF MAKING THE SAME

Номер: US20190148041A1
Автор: Cestra Gregory Keith, Strachan Andrew
Принадлежит:

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region. 1. An apparatus comprising:a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material;a first contact coupled to the first doped region;a second contact opposite the first contact coupled to the second doped region; andan isolation trench to circumscribe the third doped region.2. The apparatus of claim 1 , wherein the first and second doped regions having a higher dopant concentration than the third doped region.3. The apparatus of claim 1 , wherein the third doped region is an epitaxy region having a lower dopant concentration than the first and second doped regions.4. The apparatus of claim 1 , wherein the isolation trench includes a non-conductive material.5. The apparatus of claim 1 , wherein at least one of a voltage or current source is coupled to the first contact claim 1 , and a current path is defined from the first contact to the second contact through the third doped region circumscribed by the isolation trench.6. The apparatus of claim 1 , wherein a resistance between the first contact and the second contact is greater than or equal to 5000 kΩ.7. The apparatus of claim 1 , wherein a resistance between the first contact and the second contact corresponds to a perimeter of the isolation trench.8. The apparatus of claim 1 , wherein the third ...

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Номер записи: 74
07-06-2018 дата публикации

CURRENT DETECTION DEVICE

Номер: US20180156844A1
Автор: Kameko Kenji, NAKAMURA Keishi, Yamamoto Junpei
Принадлежит: KOA Corporation

Provided is a current detection device in which, to a bus bar type shunt resistor, another member can be easily connected and fixed by means of rotational fastening of screw members. The current detection device is provided with: a pair of wiring members () consisting of electrically conductive metal material; a resistor body () consisting of metal material having a smaller temperature coefficient of resistance than the wiring members and which is bonded to the wiring members; and a screw member () which is fixed to at least one of the wiring members and which is a separate member from the wiring members. One screw member () is fixed to one surface of the wiring members (), and another screw member () is rotationally fastened to the one screw member () sandwiching another member () disposed on the other surface of the wiring members (). 1. A current detection device comprising:a pair of wiring members consisting of conductive metal material;a resistor body consisting of metal material having a smaller temperature coefficient of resistance than the wiring members and the resistor body bonded to the wiring members; anda screw member, which is fixed to at least one of the wiring members and which is a separate member from the wiring members.2. The current detection device of claim 1 , wherein the current detection device is formed in a bus bar shape as a whole.3. The current detection device of claim 1 , wherein the screw member includes a male screw part or a female screw part.4. The current detection device of claim 1 , wherein the wiring member is provided with a hole and the screw member is abutted on a surface of the wiring member around the hole.5. The current detection device of claim 1 , wherein the wiring member is provided with a hole and a part of the screw member is abutted on inner surface of the hole.6. The current detection device of claim 1 , wherein the pair of the wiring members is provided with a bent portion at either one of the wiring members or ...

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Номер записи: 75
22-09-2022 дата публикации

Ntc thermistor element

Номер: US20220301748A1
Автор: Daisuke Tsuchida, Koki Yamada, Takehiko Abe, Yoshihiko SATOH
Принадлежит: TDK Corp

An NTC thermistor element is of less than 0402 size. A first internal electrode is connected to a first external electrode. A second internal electrode is separated from the first internal electrode and is connected to a second external electrode. A third internal electrode opposes the first and second internal electrodes and is not connected to the first external electrode and the second external electrode. A shortest distance between the first internal electrode and the third internal electrode and a shortest distance between the second internal electrode and the third internal electrode are smaller than a shortest distance between the first internal electrode and the second internal electrode, a shortest distance between the first external electrode and the third internal electrode, and a shortest distance between the second external electrode and the third internal electrode, and are less than or equal to ¼ the thickness of the thermistor body.

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Номер записи: 76
08-06-2017 дата публикации

CURRENT DETECTION RESISTOR

Номер: US20170162302A1
Автор: Chiku Satoshi
Принадлежит: KOA Corporation

Provided is a current detection resistor, which has a jumper function and a low resistance resistor function at the same time. The resistor is a metal plate resistor, which comprises a resistor body consisting of a metal material and a pair of electrodes consisting of a metal material having higher conductivity than the resistor body, wherein the resistor body is bonded between the electrodes. The pair of electrodes comprises a first electrode and a second electrode longer than the first electrode, wherein a slit is formed in the second electrode so that a portion of the second electrode becomes a terminal for voltage detection. The end of the slit does not reach the resistor body. The first electrode and the second electrode are respectively provided with mounting portions connecting to wiring patterns, and the resistor body is formed in the vicinity of the mounting portion of the first electrode. 1. A current detection resistor , comprising:a resistor body consisting of a metal material;a pair of electrodes consisting of a metal material, which has higher electrical conductivity than the resistor body, the resistor body being bonded between the electrodes to form a metal plate resistor;wherein the pair of electrodes comprises a first electrode and a second electrode longer than the first electrode, and a slit is formed in the second electrode so that a portion of the second electrode becomes a terminal for voltage detection.2. The resistor of claim 1 , wherein an end of the slit does not reach the resistor body.3. The resistor of claim 1 , wherein the first electrode and the second electrode are respectively provided with mounting portions for connecting to wiring patterns claim 1 , and the resistor body is formed in the vicinity of the mounting portion of the first electrode. The present invention relates to current detection resistors, particularly relating to metal plate resistors, which has a resistor body consisting of a metal material.Current detection ...

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Номер записи: 77
04-09-2014 дата публикации

CHIP RESISTOR, MOUNTING STRUCTURE FOR CHIP RESISTOR, AND MANUFACTURING METHOD FOR CHIP RESISTOR

Номер: US20140247108A1
Автор: NAKA Kentaro, TSUKADA Torayuki
Принадлежит: ROHM CO., LTD

[Object] 1. A chip resistor comprising:a first electrode;a second electrode spaced apart from the first electrode in a first direction;a resistor portion bonded to the first electrode and the second electrode;a first intermediate layer connected to the first electrode and the resistor portion;a second intermediate layer connected to the second electrode and the resistor portion; anda coating film covering the first electrode;wherein the coating film is made of a material having a higher absorptance of a laser beam of a predetermined wavelength than that of a material forming the first electrode, and the first intermediate layer contains at least the material forming the coating film.2. The chip resistor according to claim 1 , wherein the coating film is made of Sn or solder.3. The chip resistor according to claim 2 , wherein the resistor portion extends along a plane spreading in the first direction and a second direction crossing the first direction claim 2 ,the first electrode includes a first principal surface facing one side in a thickness direction of the resistor portion;the coating film includes a first-principal-surface coating portion covering the first principal surface, the first-principal-surface coating portion covering the first principal surface over a region from an end closer to the second electrode in the first direction to an end opposite in the first direction from the end closer to the second electrode.4. The chip resistor according to claim 3 , wherein the first electrode includes a second principal surface facing away from the first principal surface claim 3 , andthe coating film includes a second-principal-surface coating portion covering the second principal surface.5. The chip resistor according to claim 4 , wherein the second-principal-surface coating portion covers the second principal surface over a region from an end closer to the second electrode in the first direction to an end opposite in the first direction from the end closer to ...

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Номер записи: 78
18-06-2015 дата публикации

THIN-FILM THERMISTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20150170805A1
Автор: ITO Kenji, Toyoda Tadashi
Принадлежит: SEMITEC Corporation

Provided is a thin-film thermistor element including a Si substrate , a thermistor thin film formed on the Si substrate , and an electrode made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film . The electrode is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment. 1. A thin-film thermistor element comprising:a base substance; a thermistor thin film formed on the base substance; andat least one pair of electrodes formed on, under or inside the thermistor thin film, whereinthe one pair of electrodes each include an electrode layer made of platinum, an alloy thereof or the like, andthe electrode layer is crystalline.2. The thin-film thermistor element according to claim 1 , wherein the electrode layer is in a crystalline state of granular crystal with <111> orientation claim 1 , and contains at least one of oxygen and nitrogen.3. The thin-film thermistor element according to claim 1 , wherein the electrode layer is in a crystalline state of columnar crystal with <111> orientation claim 1 , and contains at least one of oxygen and nitrogen.4. The thin-film thermistor element according to claim 1 , whereinthe electrode layer is in a crystalline state of granular crystal and columnar crystal with <111> orientation, and contains at least one of oxygen and nitrogen.5. The thin-film thermistor element according to claim 2 , whereina content of the at least one of oxygen and nitrogen in the electrode layer is from 0.01% by weight to 4.9% by weight, both inclusive.6. A method of manufacturing a thin-film thermistor element for forming a pair of electrodes by patterning on claim 2 , under or inside a thermistor thin film formed on a base substance claim 2 , the method comprising:a first step of depositing an electrode layer; a second step of forming at least one pair of electrodes by patterning; anda third step of heat-treating the electrode layer to turn the electrode layer into a ...

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Номер записи: 79
21-05-2020 дата публикации

CARTRIDGE FOR AN AEROSOL-GENERATING SYSTEM WITH CUSTOMIZABLE IDENTIFICATION RESISTANCE

Номер: US20200154774A1
Автор: REEVELL Tony
Принадлежит: Altria Client Services LLC

In a method of manufacturing a cartridge of an electronic vaping device, wherein the cartridge includes a pre-vapor formulation storage element, an electrical resistor is physically manipulated to change a resistance of the electrical resistor from a first resistance value to a second resistance value, the second resistance value indicative of a pre-vapor formulation substrate contained in the pre-vapor formulation storage element. The electrical resistor is then mounted to a portion of the cartridge. 1. A method of manufacturing a cartridge of an electronic vaping device , the cartridge having a pre-vapor formulation storage element , the method comprising:physically manipulating an electrical resistor to change a resistance of the electrical resistor from a first resistance value to a second resistance value, the second resistance value indicative of a pre-vapor formulation substrate contained in the pre-vapor formulation storage element; andmounting the electrical resistor to a portion of the cartridge.2. The method according to claim 1 , wherein the electrical resistor is a sheet resistor composed of a metallic material.3. The method according to claim 2 , wherein the electrical resistor is composed of Nichrome material.4. The method according to claim 1 , wherein the physically manipulating comprises:changing a geometrical shape of the electrical resistor.5. The method according to claim 1 , wherein the electrical resistor has at least one of a rectangular claim 1 , circular claim 1 , or semi-circular shape.6. The method according to claim 1 , wherein the physically manipulating comprises:at least one of piercing, clipping, puncturing, cutting, stamping and deforming the electrical resistor.7. The method according to claim 1 , wherein the mounting comprises:mounting the electrical resistor inside the cartridge.8. The method according to claim 1 , wherein the mounting comprises:mounting the electrical resistor on an outside of the cartridge.9. A cartridge of an ...

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Номер записи: 80
24-06-2021 дата публикации

PRODUCTION METHOD FOR AN ELECTRICAL RESISTANCE ELEMENT AND CORRESPONDING RESISTANCE ELEMENT

Номер: US20210193356A1
Автор: BAUM Andreas, Burk Steffen, HARTMANN Jens, LANGER Ingolf, MARIEN Jan, MUELLER Sieglinde, PRINZ Phillip, SCHMIDT Petra, Witt Alexander, ZIESCHE Joerg
Принадлежит:

The invention relates to a production method for an electrical resistance element (for example a shunt) with the following steps: -providing a resistance alloy in powder form, and -forming the resistance element from the powdered resistance material. The invention also relates to a correspondingly produced resistance element. 122-. (canceled)23. A method of manufacturing an electrical resistor element , comprising the following steps:a) providing a powdery resistance alloy which is a resistance alloy in powder form, andb) forming the resistor element from the powdery resistance alloy.24. The method of manufacturing according to claim 23 , wherein the forming of the resistor element into a green part is carried out by metal powder injection molding.25. The method of manufacturing according to claim 23 , wherein multi-component metal powder injection molding is used for forming the resistor element claim 23 , wherein the following components of a resistor are joined together to form a green part:a) the resistor element which is made of the powdery resistance alloy, andb) at least two connection parts made of a powdery conductor material.26. The method of manufacturing according to claim 23 , further comprising at least one of the following steps:a) mixing at least one of the powdery resistance alloy and a powdery conductor material with a binder to form a feedstock before molding,b) debinding a green part to a brown part after molding, whereby the binder is at least partially removed from the green part,c) sintering the brown part to the finished resistor element,d) reworking of the resistor element,e) joining together the resistor element with at least two electrically conductive connection parts.27. The method of manufacturing according to claim 26 , wherein the feedstock of the resistance alloy contains the following constituents:a) 50-80 weight percent of the resistance alloy andb) 20-50 weight percent of organic components.28. The method of manufacturing ...

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Номер записи: 81
15-06-2017 дата публикации

Solid state resettable fuses

Номер: US20170170824A1
Автор: Hongrae Kim, Taosha Jiang, Yu Du
Принадлежит: ABB Schweiz AG, ABB TECHNOLOGY AG

A resettable solid state fuse that automatically restores an interrupted circuit after an overcurrent event is cleared. The resettable solid state fuse can include one or more switching devices, such as, for example, a normally-on power semiconductor, and one or more positive temperature coefficient (PTC) resistive elements. The switching device is structured to extend the voltage rating of the resettable fuse, allowing the solid state resettable fuse to attain both a relatively elevated voltage rating and a relatively elevated electrical current rating while using a PTC resistive element. According to certain embodiments, the solid state resettable fuse can be tripped by a cascaded PTC resistive element, thereby providing a passive electronic device that can operate in the absence of electronic sensing, detection, and tripping, as well as without reliance on an auxiliary power supply.

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Номер записи: 82
18-09-2014 дата публикации

COMPOSITE RESISTORS

Номер: US20140266566A1
Автор: Gobbi Ronald R.
Принадлежит: ANALOG DEVICES, INC.

A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor. 1. An electronic device comprising:a thin film resistor element having a first temperature coefficient of resistance (TCR);a metal resistor element having a second TCR of opposite sign to the first TCR, the metal resistor electrically connected with the thin film resistor;an insulating material interposed between the thin film resistor element and the metal resistor element;an overlapping region comprising a portion of the metal resistor element overlapping a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element through the insulating material.2. The electronic device of claim 1 , wherein the thin film resistor element and the metal resistor element are connected in series.3. The electronic device of claim 2 , wherein the thermal communication between the portion of the thin film resistor element and the portion of the metal resistor element is sufficient that self-heating of the thin film resistor element causes a resistance drift in the thin film resistor element at least partially compensated by an opposite resistance drift in the metal resistor element.4. The electronic device of claim 3 , wherein the thin film resistor element has a first surface and the metal resistor element has a second surface substantially parallel to the first surface claim 3 , and wherein the thermal communication includes a heat transfer by thermal conduction in a ...

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Номер записи: 83
08-07-2021 дата публикации

Ceramic Multi-Layer Component and Method for Producing a Ceramic Multi-Layer Component

Номер: US20210210257A1
Автор: Feichtinger Thomas, Hofrichter Alfred, Hofstätter Michael
Принадлежит:

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction. 120-. (canceled)21. A ceramic multi-layer component , comprising a stack with ceramic layers and electrode layers arranged between them ,wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction (S),wherein at least one first electrode layer extends along a main extension direction (H) from a first end region to a second end region of the first electrode layer,wherein the at least one electrode layer has a current-carrying capacity that decreases along the main extension direction.221. The multi-layer component as claimed in claim , wherein the at least one electrode layer has a specific electrical conductivity that decreases along the main extension direction.231. The multi-layer component as claimed in claim , wherein the at least one first electrode layer comprises a mixture of at least one first material with a first specific electrical conductivity and a second material with a second specific electrical conductivity that is lower than the first electrical conductivity , and the ratio (R) of the first material to the second material becomes smaller along the main extension direction.243. The multi-layer component as claimed in claim , wherein the ratio decreases continuously in at least one partial region.253. The multi-layer component as claimed in claim , wherein the ...

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Номер записи: 84
30-06-2016 дата публикации

IMPLEMENTING CONFORMAL COATING COMPOSITION FOR HIGH CURRENT CIRCUIT APPLICATIONS

Номер: US20160189832A1
Автор: Boday Dylan J., Kuczynski Joseph, Wertz Jason T., Zhang Jing
Принадлежит:

A method and structure are provided for implementing a conformal coating composition for high current applications. A copper particulate filler material layer is added over a standard conformal coating layer of a circuit component. The added layer aids in dispersing the heat away from the circuit component. The copper particulate filler material reacts with sulfur bearing gasses and prevents corrosive agents from reacting with the underlying component metallurgy, thus extending the product life. 113-. (canceled)14. A structure for implementing a conformal coating composition for high current applications comprising:a first conformal coating layer on a circuit component;the conformal coating composition including a copper particulate filler material layer deposited over the first conformal coating layer on the circuit component.15. The structure as recited in wherein the first conformal coating layer on a circuit component includes a standard conformal coating layer on a circuit component.16. The structure as recited in wherein the conformal coating composition including a copper particulate filler material layer is formed by a filler-free silicone conformal coating including copper particulate as a filler material.17. The structure as recited in wherein the conformal coating composition including a copper particulate filler material layer is formed by a filler-free silicone conformal coating including copper particulate as a filler material having about 10 weight percent (wt %) copper particulate of less than 75 microns.18. The structure as recited in wherein the copper particulate filler material layer reacts with sulfur bearing gasses and prevents corrosive agents from reacting with the underlying component metallurgy.19. The structure as recited in wherein the copper particulate filler material layer coating serves to disperse heat and getter sulfur bearing gas components protecting the underlying circuitry. The present invention relates generally to the data ...

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Номер записи: 85
04-06-2020 дата публикации

METHOD OF PRODUCING A NTCR SENSOR

Номер: US20200173031A1
Автор: Kita Jaroslaw, Moos Ralf, Munch Christian, POULAIN Véronique, SCHUBERT Michaela, SCHUURMAN Sophie
Принадлежит: VISHAY ELECTRONIC GMBH

The present invention relates to a method of producing a negative temperature coefficient resistor (NTCR) sensor, the method comprising the steps of: providing a mixture comprising uncalcined powder and a carrier gas in an aerosol-producing unit, with the uncalcined powder comprising metal oxide components; forming an aerosol from said mixture and said carrier gas and accelerating said aerosol in a vacuum towards a substrate arranged in a deposition chamber; forming a film of the uncalcined powder of said mixture on said substrate; and transforming the film into a layer of spinel-based material by applying a heat treatment step. 1. A method of producing a negative temperature coefficient resistor (NTCR) sensor , the method comprising:providing a mixture comprising uncalcined powder and providing a carrier gas in an aerosol-producing unit, the uncalcined powder comprising metal oxide components;forming an aerosol from the mixture and the carrier gas and accelerating the aerosol in a vacuum towards a substrate arranged in a deposition chamber;forming a film of the uncalcined powder of the mixture on the substrate; andtransforming the film into a layer of spinel-based material by applying a heat treatment step.2. A method in accordance with claim 1 ,wherein the heat treatment step is applied at a temperature below 1000° C.3. A method in accordance with claim 1 , wherein the heat treatment step takes place in an atmosphere claim 1 , wherein said atmosphere has a controlled partial oxygen pressure.4. A method in accordance with claim 1 ,wherein the carrier gas is selected from the group consisting of oxygen, nitrogen, a noble gas, and combinations thereof.5. A method in accordance with claim 1 ,wherein the uncalcined powder comprises particle sizes in the range of 50 nm to 10 μm.6. A method in accordance with claim 1 ,wherein the layer of spinel-based material comprises a spinel composed of two or more cations from the group consisting of Mn, Ni, Co, Cu, Fe, Cr, Al, Mg, ...

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Номер записи: 86
20-07-2017 дата публикации

CIRCUIT BOARD WITH THERMAL PATHS FOR THERMISTOR

Номер: US20170207008A1
Автор: CHUNG Bonggeun, YOU YoonJoo
Принадлежит: FAIRCHILD KOREA SEMICONDUCTOR LTD.

A circuit board for an electronic device includes pattern areas on both sides of the circuit board. Each end of a thermistor is electrically connected to electrically conductive pads on pattern areas on the top and bottom sides of the circuit board. An input plug is electrically connected to an end of the thermistor. The input plug is electrically connected to the thermistor by way of an input connector to which the circuit board is inserted. 1. A circuit board comprising:a first conductive pad on a top side of the circuit board;a second conductive pad on a bottom side of the circuit board; anda thermistor mounted on the circuit board, the thermistor comprising a first end that is electrically connected to the first and second conductive pads and a second end that is electrically connected to a component that is mounted on the circuit board.2. The circuit board of claim 1 , wherein the first and second conductive pads are electrically connected to an input plug.3. The circuit board of claim 2 , wherein the first and second conductive pads are electrically connected to the input plug by way of an input connector.4. The circuit board of claim 1 , wherein the first and second conductive pads are solder pads and the thermistor is soldered onto the first and second conductive pads.5. The circuit board of claim 1 , wherein the thermistor is a negative temperature coefficient (NTC) thermistor.6. The circuit board of claim 1 , wherein the component that is electrically connected to the second end of the thermistor comprises a rectifier.7. The circuit board of claim 1 , further comprising a third conductive pad on the top side of the circuit board and a fourth conductive pad on the bottom side of the circuit board.8. The circuit board of claim 7 , wherein the second end of the thermistor is electrically connected to the third and fourth conductive pads.9. The circuit board of claim 8 , wherein the first claim 8 , the second claim 8 , the third claim 8 , and the fourth ...

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Номер записи: 87
26-07-2018 дата публикации

WIPER BLADE COMPRISING A HEATING ELECTRICAL CIRCUIT AND A PTC FUSE

Номер: US20180208157A1
Автор: Caillot Gérald, Filatov Dmitry, Izabel Vincent, Jarasson Jean-Michel, Leben Thomas, Runge Olaf
Принадлежит:

The invention proposes a wiper blade () of a motor vehicle, comprising a heating electrical circuit () comprising at least one heating resistive element, which is connected to terminals () for supplying electric current, and a component for regulating the electric power supply current, which is a resettable fuse with a positive temperature coefficient (), known as a PTC fuse. The PTC fuse () is, for example, a surface-mounted component, known as a CMS component, which is electrically connected to two belonging electrical connecting areas (). 1. A wiper blade of a motor vehicle , comprising:a heating electrical circuit comprising at least one heating resistive element, which is connected to terminals for supplying electric current; andat least one component for regulating the electric power supply current, wherein the regulating component is a resettable fuse with a positive temperature coefficient, known as a PTC fuse.2. The wiper blade according to claim 1 , wherein the PTC fuse is a surface-mounted component claim 1 , known as a CMS component claim 1 , which is electrically connected to two electrical connecting areas belonging to the heating resistive element.3. The wiper blade according to claim 1 , further comprising a support claim 1 , which claim 1 , directly or indirectly claim 1 , supports said at least one heating resistive element.4. The wiper blade according to claim 3 , wherein the PTC fuse is supported claim 3 , directly or indirectly claim 3 , by the support.5. The wiper blade according to claim 4 , wherein the support is a longitudinally elongated element and at least one substantially flat face of the support supports claim 4 , directly or indirectly claim 4 , said at least one heating resistive element.6. The wiper blade according to claim 5 , wherein said at least one face of the support supports claim 5 , directly or indirectly claim 5 , the PTC fuse.7. The wiper blade according to claim 3 , wherein the terminals for supplying electric current ...

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Номер записи: 88
25-06-2020 дата публикации

RESISTOR HAVING LOW TEMPERATURE COEFFICIENT OF RESISTANCE

Номер: US20200200799A1
Автор: HUNG TZU-HAO, LUO Ying-Da
Принадлежит:

A resistor having low temperature coefficient of resistance includes a resistive part and two conductive parts connected to opposite sides of the resistive part. One conductive part has a through slot and a sensing portion between the through slot and the resistive part. The through slot has two inter-connected sections. Each section extends and ends with a closed end and has a parallel component, parallel to a main current direction defined on the resistor, and a perpendicular component, perpendicular to the main current direction. Another resistor having low temperature coefficient of resistance includes a resistive part and two conductive parts connected to two sides of the resistive part respectively. Each conductive part has a protrusion block, extending outward perpendicular to a main current direction defined on the resistor, and a sensing portion at the protrusion block. 1. A resistor having low temperature coefficient of resistance , the resistor thereon defining a main current direction , the resistor comprising:a resistive part;a first conductive part, connected to a side of the resistive part in the main current direction, the first conductive part having a first sensing portion and a first through slot, the first sensing portion being located between the first through slot and the resistive part, the first through slot comprising a first slot section and a second slot section which are located at two opposite sides of the first sensing portion relative to the main current direction and connected with each other, the first slot section extending from a first start point along a first path toward the resistive part and ending with a closed end, the second slot section extending from the first start point along a second path toward the resistive part and ending with a closed end, the first path having a first parallel component, parallel to the main current direction, and a first perpendicular component, perpendicular to the main current direction, the ...

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Номер записи: 89
27-07-2017 дата публикации

Electronic Component

Номер: US20170213623A1
Автор: Auer Christoph, Rinner Franz, Schweinzger Manfred
Принадлежит: EPCOS AG

An electronic component is disclosed. In an embodiment, the electronic component includes a plurality of functional layers arranged one on top of the other forming a stack, first inner electrodes, and second inner electrodes, each of the first and second inner electrodes arranged between two adjacent functional layers. The electronic component further includes a first outer contact electrically connected to the first inner electrodes and a second outer contact electrically connected to the second inner electrodes, wherein the functional layers are selected such that the first and second outer contacts are electrically conductively connected to one another via the functional layers both in a basic state and in a hot state of the electronic component, wherein a temperature of the hot state is higher than a temperature of the basic state, and wherein the electronic component is an NTC component. 115-. (canceled)16. An electronic component comprising:a plurality of functional layers arranged one on top of the other forming a stack;first inner electrodes;second inner electrodes, each of the first and second inner electrodes arranged between two adjacent functional layers;a first outer contact electrically connected to the first inner electrodes; anda second outer contact electrically connected to the second inner electrodes,wherein the functional layers are selected such that the first and second outer contacts are electrically conductively connected to one another via the functional layers both in a basic state and in a hot state of the electronic component, wherein a temperature of the hot state is higher than a temperature of the basic state, and wherein the electronic component is an NTC component.17. The electronic component according to claim 16 , wherein the functional layers comprises a specific electrical resistance in the basic state of the electronic component claim 16 , and wherein the specific electrical resistance is between 0.1 Ωm and 0.3 Ωm.18. The ...

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Номер записи: 90
04-07-2019 дата публикации

SENSOR DEVICE

Номер: US20190204251A1
Автор: HOSHIKA Hiroaki, Matsumoto Masahiro, NAKANO Hiroshi, ONOSE Yasuo
Принадлежит: Hitachi Automotive Systems, Ltd.

A sensor device includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor, the reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit. The first resistance circuit includes a first and a second resistive element having positive and negative resistance temperature coefficients, respectively, which are electrically connected. The second resistance circuit includes a third and a fourth resistive elements having a positive and a negative resistance temperature coefficient, respectively, which are electrically connected. The first resistance circuit is configured to generate a first deviation to either the positive or negative side with respect to a temperature change, and the second resistance circuit is configured to generate a second deviation to the side opposite to the positive or negative side where the first deviation is generated. 1. A sensor device that includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor and that measures the physical quantity on the basis of a change in the resistance value of the detection resistor , whereinthe reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit, the first resistance circuit including a first resistive element having a positive resistance temperature coefficient and a second resistive element having a negative resistance temperature coefficient that are electrically connected, the second resistance circuit including a third resistive element having a positive resistance temperature coefficient and a fourth resistive element having a negative resistance temperature coefficient that are electrically connected,the first resistance circuit is configured such that a combined resistance value ...

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Номер записи: 91
05-08-2021 дата публикации

Composite, and structure and thermistor using the same

Номер: US20210241946A1
Автор: Shuichi Funahashi
Принадлежит: Murata Manufacturing Co Ltd

A composite that includes multiple first metal oxide particles containing at least one metal element that is at least one of Mn or Ni, and a first amorphous phase between the multiple first metal oxide particles and which contains the at least one first metal element.

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Номер записи: 92
02-07-2020 дата публикации

Electric Component with Fail Safe Element

Номер: US20200209305A1
Автор: Hofrichter Alfred, Pichler Johann, Wischnat Volker
Принадлежит:

An electric component with a fail safe element is disclosed. In an embodiment a component includes a functional element and a fail safe element electrically interconnected therewith, wherein the fail safe element is configured to ensure a minimum resistance or a minimum conductivity of the component in the event of a failure of the functional element. 115-. (canceled)16. An electric component comprising:a functional element; anda fail safe element electrically interconnected therewith,wherein the fail safe element is configured to ensure a minimum resistance or a minimum conductivity of the component in the event of a failure of the functional element.17. The component according to claim 16 , wherein the functional element is a PTC thermistor or an NTC thermistor.18. The component according to claim 16 , wherein the functional element is an inrush current limiter or a temperature sensor.19. The component according to claim 16 , wherein the fail safe element is interconnected in parallel with the functional element.20. The component according to claim 16 , wherein the fail safe element is interconnected in series with the functional element.21. The component according to claim 16 , wherein the fail safe element is a wire section or an ohmic resistor.22. The component according to claim 16 , wherein claim 16 , in case of a parallel interconnection claim 16 , a resistance of the fail safe element at 25° C. is at least double a magnitude of a resistance of the functional element and claim 16 , in case of a series interconnection claim 16 , a resistance of the fail safe element at 25° C. is at most half a magnitude of a resistance of the functional element.23. The component according to claim 16 , wherein at −40° C. a resistance of the fail safe element is less than a resistance of the functional element.24. The component according to claim 16 , wherein the functional element comprises a disk claim 16 , wherein contacting facilities comprising wires are secured to the ...

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Номер записи: 93
27-08-2015 дата публикации

Solid-State Resistor for Pulsed Power Machines

Номер: US20150243413A1
Автор: Fowler William E., Hutsel Brian Thomas, Justus David, MacRunnels Keven Alan, Savage Mark E., Stoltzfus Brian, Stygar William A.
Принадлежит:

A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine. 1. A solid-state resistor for pulsed power machines , comprising:a flexible string of at least two ceramic resistors;an insulating outer shell enclosing the string of ceramic resistors; andinsulating oil contained within the outer shell and encapsulating the string of ceramic resistors.2. The solid-state resistor of claim 1 , wherein the resistance of the resistor is greater than 50 kohm.3. The solid-state resistor of claim 1 , wherein the insulating outer shell comprises a flexible polymer tube. This application claims the benefit of U.S. Provisional Application No. 61/943,567, filed Feb. 24, 2014, which is incorporated herein by reference.This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.The present invention relates to resistors for pulsed power systems and, in particular, to a solid-state resistor for pulsed power machines.Most pulsed power machines require the use of resistors that are subject to high voltage and high power dissipation. Aqueous-electrolyte resistors have traditionally been used in pulsed power systems for fast voltage-divider probes, charging/trigger resistors in Marx banks, dummy loads, absorbers of reflected pulses, and capacitor bank dumps. These water-based resistors are simple, robust, have low-inductance, are capable of operation at high voltage and high current, and are capable of dissipating large pulse energies while preserving their operating capacity. ...

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Номер записи: 94
25-07-2019 дата публикации

Thin film resistor

Номер: US20190226057A1
Автор: Ying-Chieh Lee
Принадлежит: Ying-Chieh Lee

A thin film resistor has a higher resistivity compared to that of a conventional thin film resistor. The thin film resistor includes 30-45 at % of nickel, 15-30 at % of chromium, 1-10 at % of manganese, 10-30 at % of yttrium and 1-20 at % of tantalum.

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Номер записи: 95
17-08-2017 дата публикации

THERMISTOR ELEMENT

Номер: US20170236624A1
Автор: Hirata Yuichi, NAWAI Shinichiro
Принадлежит:

A thermistor element satisfies 4≦(d/ed) when a first distance is d, which is a shortest distance between a first internal electrode and a second external electrode, whereas a second distance is referred to as ed, which is a shortest distance between the first internal electrode and a fifth internal electrode, in a cross section of a body including an L direction and a T direction thereof. 1. A thermistor element comprising:a body including a length direction, a width direction, and a height direction;two external electrodes covering both ends of the body in the length direction; andmultiple internal electrodes laminated at intervals in a height direction in the body; wherein an outermost internal electrode disposed outermost in the height direction and connected to one of the external electrodes; and', 'an adjacent internal electrode overlapping with the outermost internal electrode in the height direction and connected to the other external electrode; and, 'the multiple internal electrodes includein a cross section including the length direction and height direction of the body, a first distance that is a shortest distance between the outermost internal electrode and the other external electrode is denoted by d, and a second distance that is a shortest distance between the outermost internal electrode and the adjacent internal electrode is denoted by ed, the first and second distances satisfy 4≦(d/ed).2. The thermistor element according to claim 1 , wherein the thermistor element satisfies (d/ed)≦10.3. The thermistor element according to claim 1 , wherein when a minimum thickness of the body is denoted by Tm between a surface of the body and an internal electrode located closest to the surface claim 1 , among the multiple internal electrodes claim 1 , in the height direction; andwhen a minimum thickness of the body is denoted by Wm between a surface of the body and an internal electrode located closest to the surface, among the multiple internal electrodes, in the ...

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Номер записи: 96
24-08-2017 дата публикации

PROTECTION ELEMENT

Номер: US20170244201A1
Автор: Ikeno Toshiya, IWAI Masaaki, TAKIZAWA Tsuyoshi, Tanaka Arata
Принадлежит: LITTELFUSE JAPAN G.K.

The present invention provides a protective element including (i) a PTC element having an opening passing through in the thickness direction, and (ii) a first electrode and a second electrode positioned on both main surfaces of the PTC element, the protective element characterized in that the first electrode extends from a main surface of the PTC element over an edge thereof and into the opening. A protective element of the present invention does not prevent the PTC element from expanding even when secured by a screw or caulking. 1. A protective element comprising:(i) a PTC element having a first main surface, an opposing second main surface, and an opening extending between the first main surface and the second main surface, and(ii) a first electrode disposed on the first main surface and a second electrode disposed on the second main surface of the PTC element,wherein the first electrode extends over an edge of the first main surface of the PTC element and overhangs the opening.2. The protective element according to claim 1 , wherein the second electrode is located entirely on the second main surface of the PTC element.3. The protective element according to claim 1 , wherein the PTC element is a polymer PTC element.4. The protective element according to claim 1 , wherein the first electrode entirely covers an edge of the PTC element that defines the opening.5. The protective element according to claim 1 , wherein the PTC element claim 1 , the first electrode claim 1 , and the second electrode have an opening.6. The protective element according to claim 1 , wherein the PTC element claim 1 , the first electrode claim 1 , and the second electrode are ring-shaped.7. A protective element comprising:(i) a ring-shaped PTC element, and(ii) a ring-shaped first electrode disposed in a first main surface of the PTC element and(iii) a ring-shaped second electrode positioned on a second main surface of the PTC element opposite the first main surface;wherein an inner diameter ...

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Номер записи: 97
09-09-2021 дата публикации

THERMAL SENSOR CIRCUIT

Номер: US20210278286A1
Автор: Galy Philippe, LETHIECQ Renan
Принадлежит: STMICROELECTRONICS SA

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor. 1. A temperature sensing circuit , comprising:a thermistor comprising a first MOS transistor having a first drain, a first source, a first gate and a first body, wherein the first MOS transistor is configured to operate in weak inversion mode with a negative temperature coefficient drain-source resistance;an output terminal coupled to the first source and configured to generate a positive temperature coefficient output voltage; anda current source comprising a second MOS transistor having a second drain, a second source, a second gate and a second body, wherein the second gate is coupled to the first source and configured to impose a drain-source current of the first MOS transistor; andwherein the first body and second body are directly electrically connected to a ground node.2. The temperature sensing circuit of claim 1 , wherein the first and second MOS transistors are supported by a bulk substrate that provides the first and second bodies.3. The temperature sensing circuit of claim 1 , wherein the first and second MOS transistors are supported by a semiconductor on insulator (SOI) substrate claim 1 , said SOI substrate including semiconductor film layer over a buried oxide layer over a semiconductor substrate claim 1 , and wherein the semiconductor film layer provides the first and second bodies.4. The temperature sensing circuit of claim 3 , wherein the SOI substrate is one of a fully depleted SOI substrate or a partially depleted SOI substrate.5. The temperature sensing circuit of claim 3 , wherein the first MOS transistor ...

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Номер записи: 98
01-08-2019 дата публикации

RESISTOR AND METHOD FOR THE PRODUCTION THEREOF

Номер: US20190237226A1
Автор: Hetzler Ullrich
Принадлежит:

The invention concerns a resistor, in particular a low-resistance current measuring resistor, having two connecting parts made of a conductor material and a resistor element made of a resistance material inserted between the connecting parts, the resistance material having a specific thermal force which generates a specific thermoelectric voltage in the event of a temperature difference between the resistor element on the one hand and the connecting parts on the other hand. The invention additionally provides for a compensating element which in operation generates a thermoelectric voltage which at least partially compensates for the thermoelectric voltage generated by the resistor element. Furthermore, the invention includes a corresponding manufacturing process. 115-. (canceled)16. A resistor comprising:a) a first connecting part made of a conductor material;b) a second connecting part made of the conductor material; c1) the resistor element is arranged in the current direction between the first connecting part and the second connecting part and through which the electric current flows;', 'c2) the resistance material has a specific thermal force which generates a specific thermoelectric voltage at a temperature difference between the resistor element on the one hand and the connecting parts on the other hand, and, 'c) a resistor element made of a resistance material, whereind) further comprising a compensating element which in operation generates a thermoelectric voltage which at least partially compensates the thermoelectric voltage generated by the resistor element.17. The resistor according to claim 16 , wherein the compensating element is inserted into a voltage measuring line which measures the voltage drop across the resistor element.18. The resistor according to claim 16 , further comprising:a) a first voltage tap which is electrically conductively connected to the first connecting part;b) a second voltage tap which is electrically conductively connected to ...

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Номер записи: 99
23-07-2020 дата публикации

THERMISTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

Номер: US20200234856A1
Автор: Hirata Yuichi, MITO Kengo, TOKIEDA Kojiro
Принадлежит:

A thermistor element includes an element body made of ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface, first and second external electrodes respectively covering the first and second end surfaces and portion of the peripheral surface adjacent to the respective first and second end surfaces. The first and second external electrodes include electrode layers including an underlayer and a metal plating layer, the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other, and the underlayer of the second external electrode includes, adjacent to or in a vicinity of the first external electrode, two first external electrode side corner portions that are thin and adjacent to each other. 1. A thermistor element comprising:an element body made of a ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface;a first external electrode covering the first end surface and a portion of the peripheral surface adjacent to or in a vicinity of the first end surface; anda second external electrode covering the second end surface and a portion of the peripheral surface adjacent to or in a vicinity of the second end surface; whereineach of the first external electrode and the second external electrode includes a plurality of electrode layers including an underlayer that is a lowermost layer and a metal plating layer that is an uppermost layer;the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other; andthe underlayer of the second external electrode includes, adjacent to ...

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Номер записи: 100