28-03-2013 дата публикации
Номер: US20130078475A1
Germanium antimony telluride materials are described, e.g., material of the formula GeSbTeCN, wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell. 1. A chalcogenide material , selected from the group consisting of:{'sub': x', 'y', 'z', 'm', 'n, '(i) material of the formula GeSbTeCNwhereinx is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.02-0.20;{'sub': x', 'y', 'z', 'm, '(ii) material of the formula GeSbTeA, wherein A is a dopant element selected from the group of N, C, In, Sn, and Se, and wherein x is from 0.1 to 0.6, y is from 0 to 0.7, z is from 0.2 to 0.9, and m is from 0 to 0.15;'}(iii) material containing 27.5 to 33% germanium, with tellurium up to 55%, and the remainder being antimony;(iv) 225 GeSbTe doped with germanium to yield germanium-rich GeSbTe material;{'sub': 2', '3, '(v) germanium-enriched GeSbTe having a ratio of GeTe:SbTethat is in a range of from 3:1 to 10:1;'}(vi) GeSbTe material containing 25 to 60% germanium, 2 to 25% antimony, and 40 to 55% tellurium; and(vii) material selected from the group consisting of materials (ii)-(vi), as doped with at least one of carbon and nitrogen, wherein the amount of each is in a range of from 2 to 20%.2. A material according to claim 1 , wherein GeSbTetherein has an atomic composition ...
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