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27-12-2006 дата публикации

ЛИНЕЙНЫЙ МАНИПУЛЯТОР ДЕРЖАТЕЛЯ ПОДЛОЖКИ ДЛЯ МОЛЕКУЛЯРНО-ПУЧКОВОЙ ЭПИТАКСИИ

Номер: RU0000059632U1

Линейный манипулятор держателя подложки для молекулярно-пучковой эпитаксии, включающий размещенный в корпусе ползун, снабженный приводом, отличающийся тем, что ползун выполнен в виде размещенных одна в другой труб квадратного сечения - внешней трубы и внутренней трубы, сопряженных между собой посредством подшипников, на конце внешней трубы укреплен цанговый зажим для фиксации держателя подложки, внутренняя труба снабжена разжимным эксцентриком, размещенным на ее конце внутри цангового зажима, при этом внутренняя труба снабжена приводом ее вращения, а наружная труба снабжена приводом ее возвратно-поступательного перемещения. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 59 632 (13) U1 (51) МПК C30B 23/08 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005138551/22 , 06.12.2005 (24) Дата начала отсчета срока действия патента: 06.12.2005 (45) Опубликовано: 27.12.2006 (73) Патентообладатель(и): Закрытое Акционерное Общество "Научное и технологическое оборудование" (RU) U 1 5 9 6 3 2 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Линейный манипулятор держателя подложки для молекулярно-пучковой эпитаксии, включающий размещенный в корпусе ползун, снабженный приводом, отличающийся тем, что ползун выполнен в виде размещенных одна в другой труб квадратного сечения - внешней трубы и внутренней трубы, сопряженных между собой посредством подшипников, на конце внешней трубы укреплен цанговый зажим для фиксации держателя подложки, внутренняя труба снабжена разжимным эксцентриком, размещенным на ее конце внутри цангового зажима, при этом внутренняя труба снабжена приводом ее вращения, а наружная труба снабжена приводом ее возвратно-поступательного перемещения. 5 9 6 3 2 (54) ЛИНЕЙНЫЙ МАНИПУЛЯТОР ДЕРЖАТЕЛЯ ПОДЛОЖКИ ДЛЯ МОЛЕКУЛЯРНО-ПУЧКОВОЙ ЭПИТАКСИИ R U Адрес для переписки: 192007, Санкт-Петербург, а/я 146, ООО "АИС поли-ИНФОРМ-патент", пат.пов.О.Л. Сандигурскому, рег.№ 750 (72) Автор(ы): ...

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10-03-2007 дата публикации

РОСТОВОЙ МАНИПУЛЯТОР ВАКУУМНОЙ КАМЕРЫ ДЛЯ ВЫРАЩИВАНИЯ ПОЛУПРОВОДНИКОВЫХ ГЕТЕРОСТРУКТУР

Номер: RU0000061716U1

Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере, включающей корпус 1 и крышку 2, содержащий штангу 3 с нагревателем 4 на нижнем конце, полый трубчатый элемент 5, держатель 6 подложки 7, при этом штанга установлена внутри полого трубчатого элемента, а держатель подложки установлен с возможностью его захвата и освобождения в захватном механизме, включающем L-образные консоли 8, горизонтальные элементы которых выполнены с возможностью размещения на них держателя подложки, а их вертикальные элементы прикреплены верхними концами к диску 9 с центральным отверстием 10, полый трубчатый элемент пропущен через центральное отверстие диска 9, к которому по контуру центрального отверстия прикреплена каретка 11, снабженная роликами 12, поджатыми к наружной поверхности полого трубчатого элемента, отличающийся тем, что на внутренней поверхности крышки 2 вакуумной камеры выполнены с возможностью упирания в них каретки 11 регулируемые по высоте упоры 13, на наружной поверхности полого трубчатого элемента 5 укреплены с возможностью упирания в них роликов 12 переставные по высоте полого трубчатого элемента упоры 14, к нижнему концу полого трубчатого элемента 5 прикреплен диск 15 с центральным отверстием 16 и отверстиями 17, выполненными по его периферии, в центральное отверстие 16 пропущена штанга 3, в отверстия 17 пропущены вертикальные элементы L-образных консолей, при этом между диском 9, прикрепленным к L-образным консолям, и диском 15, прикрепленным к полому трубчатому элементу, размещены упругие элементы 18. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 61 716 (13) U1 (51) МПК C30B 23/02 H01L 21/00 (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2006138916/22 , 31.10.2006 (24) Дата начала отсчета срока действия патента: 31.10.2006 (45) Опубликовано: 10.03.2007 (73) Патентообладатель(и): Закрытое акционерное ...

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10-03-2007 дата публикации

РОСТОВОЙ МАНИПУЛЯТОР ВАКУУМНОЙ КАМЕРЫ ДЛЯ ВЫРАЩИВАНИЯ ПОЛУПРОВОДНИКОВЫХ ГЕТЕРОСТРУКТУР

Номер: RU0000061717U1

Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере, включающей корпус и крышку, содержащий штангу с нагревателем на нижнем конце и базовым фланцем на верхнем конце и полый трубчатый элемент с держателем полупроводниковой подложки на нижнем конце, при этом штанга установлена внутри полого трубчатого элемента и сопряжена с ним посредством подшипников, полый трубчатый элемент снабжен приводом вертикального возвратно-поступательного перемещения, выполненным в виде снабженного механизмом сжатия-растяжения сильфона, а также снабжен механизмом его вращения, укрепленным на базовом фланце, включающем привод и зубчатую передачу, отличающийся тем, что сильфон укреплен на крышке вакуумной камеры, а базовый фланец укреплен на сильфоне. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 61 717 (13) U1 (51) МПК C30B 23/02 H01L 21/00 (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2006138917/22 , 31.10.2006 (24) Дата начала отсчета срока действия патента: 31.10.2006 (45) Опубликовано: 10.03.2007 (73) Патентообладатель(и): Закрытое акционерное общество "Научное и технологическое оборудование" (RU) U 1 6 1 7 1 7 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Ростовой манипулятор вакуумной камеры для выращивания полупроводниковых гетероструктур, размещенный в вакуумной камере, включающей корпус и крышку, содержащий штангу с нагревателем на нижнем конце и базовым фланцем на верхнем конце и полый трубчатый элемент с держателем полупроводниковой подложки на нижнем конце, при этом штанга установлена внутри полого трубчатого элемента и сопряжена с ним посредством подшипников, полый трубчатый элемент снабжен приводом вертикального возвратно-поступательного перемещения, выполненным в виде снабженного механизмом сжатия-растяжения сильфона, а также снабжен механизмом его вращения, укрепленным на базовом фланце, включающем привод и ...

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20-05-2010 дата публикации

ГРАФИТОВЫЙ НАГРЕВАТЕЛЬ

Номер: RU0000094231U1

Графитовый нагреватель, в стенках которого выполнены вырезы с перемычками, водоохлаждаемые шины источника питания, тигель, отличающийся тем, что нагреватель выполнен составным, включает ряд одинаковых нагревательных элементов, выполненных в форме прямоугольных параллелепипедов и установленных равномерно по окружности вокруг тигля, а водоохлаждаемые шины источника питания подведены к каждому из нагревательных элементов. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 94 231 (13) U1 (51) МПК C30B 23/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2010105300/22, 15.02.2010 (24) Дата начала отсчета срока действия патента: 15.02.2010 (45) Опубликовано: 20.05.2010 9 4 2 3 1 R U Формула полезной модели Графитовый нагреватель, в стенках которого выполнены вырезы с перемычками, водоохлаждаемые шины источника питания, тигель, отличающийся тем, что нагреватель выполнен составным, включает ряд одинаковых нагревательных элементов, выполненных в форме прямоугольных параллелепипедов и установленных равномерно по окружности вокруг тигля, а водоохлаждаемые шины источника питания подведены к каждому из нагревательных элементов. Ñòðàíèöà: 1 ru CL U 1 U 1 (54) ГРАФИТОВЫЙ НАГРЕВАТЕЛЬ 9 4 2 3 1 (73) Патентообладатель(и): Билалов Билал Аругович (RU), Общество с ограниченной ответственностью "АККОРД" (RU), Общество с ограниченной ответственностью "Инновационнотехнологический центр "Новые материалы и технологии" (RU) R U Адрес для переписки: 367014, Республика Дагестан, г.Махачкала, а/я 17, Дагсовет ВОИР (72) Автор(ы): Билалов Билал Аругович (RU), Гитикчиев Магомед Ахмедович (RU), Сафаралиев Гаджимет Керимович (RU) U 1 U 1 9 4 2 3 1 9 4 2 3 1 R U R U Ñòðàíèöà: 2 RU 5 10 15 20 25 30 35 40 45 94 231 U1 Известен графитовый нагреватель, используемый в печи для эпитаксии карбида кремния по патенту на изобретение RU 2330128, который по своим конструктивным признакам можно выбрать в качестве прототипа. ...

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10-12-2011 дата публикации

УСТАНОВКА, ПЕЧЬ И НАГРЕВАТЕЛЬ ПЕЧИ ДЛЯ ИЗГОТОВЛЕНИЯ КОМПОЗИЦИОННОГО ОПТИЧЕСКОГО МАТЕРИАЛА СЕЛЕНИД ЦИНКА/СУЛЬФИД ЦИНКА

Номер: RU0000111140U1

1. Установка для изготовления композиционного оптического материала селенид цинка/сульфид цинка, включающая печь, соединенную с пультом управления, вакуумной системой, системой водяного охлаждения и силовым трансформатором, где пульт управления в свою очередь соединен через силовой трансформатор с системой водяного охлаждения, которая также подключена к вакуумной системе. 2. Печь для изготовления композиционного оптического материала селенид цинка/сульфид цинка включает корпус, в котором размещен нагреватель, внутри которого расположен реакционный контейнер, корпус печи закрыт сверху и снизу крышками, а внутри корпуса размещены теплоизоляционные экраны, представленные как теплоизоляционный экран корпуса печи, расположенный между внутренней поверхностью корпуса и нагревателем, теплоизоляционный верхний экран, расположенный под верхней крышкой корпуса печи, и теплоизоляционный нижний экран, расположенный над нижней крышкой печи, в боковых стенках корпуса расположены средства для подсоединения вентиляции печи и вакуумной системы, датчики температуры и вакуума и вентиль напуска воздуха, через нижнюю крышку печи подключен соответствующий датчик для измерения температуры под контейнером, к наружной части дна нагревателя подключены токовводы, а корпус и крышки корпуса выполнены водоохлаждаемыми. 3. Печь по п.2, в которой нагреватель имеет переменную толщину по высоте боковых стенок и выполнен из графита. 4. Нагреватель печи для изготовления композиционного оптического материала селенид цинка/сульфид цинка выполнен из графита в виде цилиндра с прорезями по его высоте, в котором боковые стенки имеют переменную толщину, наименьшую снизу и наибольшую в верхней части. 5. Нагреватель по п.4, в котором переменность толщины вертикальных стенок имеет ступенчатый характер. 6. Нагреватель по п.5, в котором толщина вертикальных стенок имеет трехступенчатый вид. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 111 140 U1 (51) МПК C30B 28/12 (2006.01) C30B 23/06 (2006.01) C30B 29/48 (2006.01) ...

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27-03-2013 дата публикации

УСТРОЙСТВО ДЛЯ ТЕРМОДИФФУЗИОННОГО НАНЕСЕНИЯ КРИСТАЛЛИЧЕСКОЙ ЦИНКОВОЙ ПЛЕНКИ НА МЕТАЛЛИЧЕСКИЕ ИЗДЕЛИЯ

Номер: RU0000126330U1

1. Устройство для термодиффузионного нанесения кристаллической цинковой пленки на металлические изделия, содержащее цилиндрическую горизонтальную герметичную капсулу с разъемом в диаметральной плоскости, снабженную уплотнением и выполненную с возможностью ее установки в муфельную печь, отличающееся тем, что устройство дополнительно содержит набор соосно расположенных цилиндрических контейнеров, имеющих металлический каркас и снабженных замковыми устройствами, соединяющими их друг с другом и с торцевыми стенками капсулы и исключающими поворот контейнеров относительно капсулы, причем каждый из цилиндрических контейнеров содержит набор тубусов одинакового диаметра d, установленных в нем аксиально, а их оси равномерно распределены по поперечному сечению контейнера, причем контейнеры представляют собой стержневую систему, а тубусы - стержневую систему, обтянутую сеткой, размер ячеек которой меньше минимального характерного размера обрабатываемых металлических изделий L. 2. Устройство по п.1, отличающееся тем, что каждый из цилиндрических контейнеров содержит от 2 до 6 тубусов. И 1 126330 ко РОССИЙСКАЯ ФЕДЕРАЦИЯ ВУ” 126 330°° 44 ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ИЗВЕЩЕНИЯ К ПАТЕНТУ НА ПОЛЕЗНУЮ МОДЕЛЬ РОЭК Изменение наименования, фамилии, имени, отчества патентообладателя (73) Патентообладатель(и): Акционерное общество "Неоцинк Технолоджи" (ВО) Адрес для переписки: 111024, Москва, 2-я ул. Энтузиастов, 5, кори. 3, эт. 2, пом. УП, ком. 3, АО "Неоцинк Технолоджи" Дата внесения записи в Государственный реестр: 25.06.2019 Дата публикации и номер бюллетеня: 25.06.2019 Бюл. №18 Стр.: 1 па ОЭС ЕП

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24-03-2017 дата публикации

РЕАКТОР ДЛЯ ОЧИСТКИ ТВЕРДЫХ ВЕЩЕСТВ МЕТОДОМ ВАКУУМНОЙ СУБЛИМАЦИИ

Номер: RU0000169600U1

Полезная модель предназначена для проведения периодического процесса повышения примесной чистоты твердых веществ, способных непосредственно переходить из твердой фазы в газообразную, путем отделения труднолетучих и легколетучих примесей, и относится к области высокочистых веществ и может быть использована в различных отраслях промышленности, включая электронную. Техническим результатом является возможность многоразового использования реактора, упрощение процедуры выгрузки и исключение возможности повторного загрязнения легколетучими примесями конечного продукта, при сохранении целостности корпуса реактора. Указанный технический результат достигается за счет того, что заявлен реактор для очистки твердых веществ методом вакуумной сублимации, выполненный в целостном корпусе, внутри которого размещена емкость для исходного вещества, отличающийся тем, что содержит коллектор легколетучих примесей, расположенный внутри корпуса реактора, имеющий канал для динамической вакуумной откачки, соединенный со штуцером, который сквозным образом вставлен через фланец с грибковым уплотнением, закрывающий герметично корпус реактора. И 1 169600 ко РОССИЙСКАЯ ФЕДЕРАЦИЯ ВУ” 169 600°” 4 ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ИЗВЕЩЕНИЯ К ПАТЕНТУ НА ПОЛЕЗНУЮ МОДЕЛЬ ММ9К Досрочное прекращение действия патента из-за неуплаты в установленный срок пошлины за поддержание патента в силе Дата прекращения действия патента: 15.10.2019 Дата внесения записи в Государственный реестр: 26.08.2020 Дата публикации и номер бюллетеня: 26.08.2020 Бюл. №24 Стр.: 1 па 009691 ЕП

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08-08-2017 дата публикации

Устройство для получения совершенных монокристаллов карбида кремния с дополнительными регулирующими контурами индукционного нагрева

Номер: RU0000173041U1

Получение совершенных монокристаллов карбида кремния является необходимой составляющей производства диодов, светодиодов, транзисторов, микросхем и спецприборов как элементной базы силовой микроэлектроники. Для выращивания совершенных монокристаллов предлагается устройство для получения монокристаллического карбида кремния - SiC, отличающееся тем, что для поддержания в ростовой камере температуры порядка 2500°С и требуемого ростового градиента температур 1÷4°С/мм применяется высокочастотный основной нагревательный контур (индукционный нагреватель) на мощных IGBT транзисторах, дополненный четырьмя управляемыми регулирующими колебательными контурами, позволяющими плавно и точно поддерживать необходимые значения градиента температур распределенной системы по оси тигля. Необходимые значения параметров сублимации удается поддерживать в оптимальном режиме путем управления четырьмя дополнительными управляемыми регулирующими контурами точной настройки, питающимися от основного нагревательного контура за счет индукционной связи. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (51) МПК C30B 23/06 C23C 14/26 C30B 30/04 C30B 29/36 (11) (13) 173 041 U1 (2006.01) (2006.01) (2006.01) (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21)(22) Заявка: 2017105577, 20.02.2017 (24) Дата начала отсчета срока действия патента: 20.02.2017 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 20.02.2017 (45) Опубликовано: 08.08.2017 Бюл. № 22 (56) Список документов, цитированных в отчете о поиске: KR 20140041250 A, 04.04.2014. WO 1 7 3 0 4 1 R U (54) Устройство для получения совершенных монокристаллов карбида кремния с дополнительными регулирующими контурами индукционного нагрева (57) Реферат: Получение совершенных монокристаллов нагреватель) на мощных IGBT транзисторах, карбида кремния является необходимой дополненный четырьмя управляемыми составляющей производства диодов, светодиодов, регулирующими колебательными контурами, транзисторов, микросхем и ...

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13-05-2019 дата публикации

Реактор для получения оптических поликристаллических материалов

Номер: RU0000189121U1

Полезная модель относится к устройствам реакторов, используемых в установках для получения оптических поликристаллических материалов, необходимых для изготовления оптических элементов, предназначенных для работы преимущественно в ИК-области спектра. Техническим результатом полезной модели является выравнивание потока паров исходного вещества для их равномерного осаждения на подложку, а также дополнительное увеличение скорости проникновения паров в зону осаждения. Реактор для получения оптических поликристаллических материалов включает корпус, зону испарения исходного вещества, расположенную в нижней части реактора, зону осаждения паров исходного вещества, расположенную в верхней части реактора, диафрагму с отверстием и экран-отражатель, расположенные между зонами испарения и осаждения, а также подложку, расположенную в верхней части зоны осаждения. Диафрагма и экран-отражатель выполнены из пористого, инертного, проницаемого для паров исходного вещества материала, а размер экрана-отражателя определяется по формуле: А≥В+2С, где А - размер экрана-отражателя, В - размер отверстия диафрагмы, С - расстояние между экраном-отражателем и диафрагмой. 189121 Ц ко РОССИЙСКАЯ ФЕДЕРАЦИЯ 7 ВУ‘’” 189 1217 91 ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ИЗВЕЩЕНИЯ К ПАТЕНТУ НА ПОЛЕЗНУЮ МОДЕЛЬ МЕЭК Восстановление действия патента Дата, с которой действие патента восстановлено: 23.06.2020 Дата внесения записи в Государственный реестр: 23.06.2020 Дата публикации и номер бюллетеня: 23.06.2020 Бюл. №18 Стр.: 1 СЬбЗ | па ЕП

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30-04-2020 дата публикации

Функциональный трехмерный компонент оптоэлектронного прибора

Номер: RU0000197477U1

Полезная модель относится к полупроводниковым приборам и может найти применение в промышленном производстве светоизлучающих устройств и фоточувствительных элементов. Функциональный трехмерный компонент оптоэлектронного прибора представляет собой бесподложечный массив однонаправленных нитевидных нанокристаллов нитрида индий-галлия, имеющих переменное по высоте поперечное сечение с утонениями на обоих концах и частично сросшихся в серединной по высоте зоне. Достигаемый технический результат - обеспечение конструктивной прочности (целостности) ФТК, сформированного в виде массива ННК нитрида индий-галлия, достаточной для его функционирования после отделения от подложки при высоком оптическом качестве материала ННК. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C30B 29/62 (2006.01) C30B 29/38 (2006.01) C30B 29/40 (2006.01) C30B 23/08 (2006.01) C30B 33/06 (2006.01) C30B 33/10 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА B82B 3/00 (2006.01) ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ B82Y 20/00 (2011.01) B82Y 40/00 (2011.01) G02B 1/02 (2006.01) (12) (13) 197 477 U1 H01L 21/02 (2006.01) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК (21)(22) Заявка: 2019140444, 09.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 30.04.2020 Приоритет(ы): (22) Дата подачи заявки: 09.12.2019 (45) Опубликовано: 30.04.2020 Бюл. № 13 U 1 1 9 7 4 7 7 R U (56) Список документов, цитированных в отчете о поиске: CN 109795982 A, 24.05.2019. EP 1796180 В1, 07.06.2017. WO 2005017962 A2, 24.02.2005. KEVIN D. GOODMAN et al., Green luminescence of InGaN nanowires grown on silicon substratesby molecular beam epitaxy, "Journal of Applied Physics", 2011,109, 084336. (54) Функциональный трехмерный компонент оптоэлектронного прибора (57) Реферат: Полезная модель относится к галлия, имеющих переменное по высоте полупроводниковым приборам и может найти поперечное сечение с утонениями на обоих концах применение в промышленном производстве и частично сросшихся в серединной по высоте светоизлучающих устройств и зоне. ...

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29-03-2012 дата публикации

Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate

Номер: US20120074404A1
Автор: Kazuhiro Ushita
Принадлежит: Bridgestone Corp

Provided is a supporting substrate ( 30 ) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate ( 10 ) composed of a silicon carbide polycrystalline body, and a coat layer ( 20 ) deposited on the silicon carbide polycrystalline substrate ( 10 ). The coat layer ( 20 ) is composed of silicon carbide or silicon and is in contact with the single crystalline wafer, and the arithmetic average roughness of the contact surface ( 22 ) of the coat layer ( 20 ) in contact with the single crystalline wafer is 1 nm or less.

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10-05-2012 дата публикации

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes

Номер: US20120114545A1
Принадлежит: Dow Corning Corp

This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

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05-07-2012 дата публикации

Halogen assisted physical vapor transport method for silicon carbide growth

Номер: US20120167825A1
Принадлежит: Individual

A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

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15-11-2012 дата публикации

Sublimation growth of sic single crystals

Номер: US20120285370A1
Принадлежит: II VI Inc

In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.

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18-04-2013 дата публикации

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

Номер: US20130095294A1
Принадлежит: Sumitomo Electric Industries, Ltd.

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

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06-06-2013 дата публикации

METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR

Номер: US20130143358A1
Принадлежит: E Ink Holdings Inc.

A method for manufacturing an oxide thin film transistor with leakage currents less than 10angstrom includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved. 1. A method for manufacturing an oxide thin film transistor with leakage currents less than 10angstrom , comprising: forming an oxide semiconductor active layer by a deposition process , wherein a gas used in the deposition process comprises oxygen with a flow ratio to the total gas in a range from 4% to 20%.2. The method for manufacturing an oxide thin film transistor as claimed in claim 1 , wherein the deposition process is a sputtering deposition process.3. The method for manufacturing an oxide thin film transistor as claimed in claim 1 , wherein material of the oxide semiconductor active layer is selected from the group consisting of zinc oxide claim 1 , zinc tin oxide claim 1 , chromium zinc oxide claim 1 , gallium zinc oxide claim 1 , titanium zinc oxide claim 1 , indium gallium zinc oxide claim 1 , copper aluminum oxide claim 1 , strontium copper oxide claim 1 , lanthanum copper oxide and any combination thereof.4. The method for manufacturing an oxide thin film transistor as claimed in claim 1 , wherein a thickness of the oxide semiconductor active layer is in a range from 300 angstroms to 2000 angstroms.5. The method for manufacturing an oxide thin film transistor as claimed in claim 1 , wherein the gas used in the deposition process further comprises argon.6. The method for manufacturing an oxide thin film transistor as claimed in claim 1 , wherein an electric power used in ...

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20-06-2013 дата публикации

METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Номер: US20130153836A1
Автор: Miyamoto Taro
Принадлежит: BRIDGESTONE CORPORATION

In a powder fabrication step (S) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (). In a purification process step (S), the sublimation starting material () is disposed in a purified graphite crucible (), and a sublimation/growth step (S) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas. 1. A method of producing a silicon carbide single crystal employing a production apparatus having a graphite member formed of graphite , disposing a raw material including a silicon carbide in the graphite member , and heating and sublimating the raw material and growing a single crystal of the silicon carbide on a seed crystal in an atmospheric gas , the method comprising:the step of fabricating the raw material by mixing a metal material including a transient metal atom with a silicon carbide source including the silicon carbide;the step of purification treatment to retain the graphite member under a temperature condition of 2,000 degrees C. or more, in an inert gas atmosphere of 100 Pa to 100 kPa; andthe step of disposing the raw material in the graphite member subsequent to the step of purification treatment, and heating and sublimating the raw material and growing a silicon carbide single crystal on the seed crystal.2. The method of producing a silicon carbide single crystal according to claim 1 , whereinthe silicon carbide source is a silicon carbide polycrystalline substance produced by means of a chemical vapor ...

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20-06-2013 дата публикации

Method for controlled growth of silicon carbide and structures produced by same

Номер: US20130153928A1
Принадлежит: Cree Inc

A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

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27-06-2013 дата публикации

Low 1c screw dislocation 3 inch silicon carbide wafer

Номер: US20130161651A1
Принадлежит: Cree Inc

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm −2 to about 2000 cm −2 .

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04-07-2013 дата публикации

Methods of fabricating a semiconductor device including dual transistors

Номер: US20130171807A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided are a semiconductor device having dual transistors, and methods of fabricating a semiconductor device, including sequentially forming an insulating layer and a polysilicon layer on a substrate having a first region and a second region, forming a first mask to cover the polysilicon layer on the second region, injecting at least one n-type impurity into the polysilicon layer on the first region to form an N-region, injecting nitrogen into the N-region, forming a second mask to cover the N-region, and injecting at least one p-type impurity into the polysilicon layer on the second region to form a P-region.

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11-07-2013 дата публикации

SINGLE CRYSTAL MANUFACTURING APPARATUS

Номер: US20130174784A1
Автор: Kondo Daisuke
Принадлежит: BRIDGESTONE CORPORATION

A cover member () of an apparatus () for producing single crystals is provided with a projection () generally in the center. The projection () is disposed so as to protrude toward the inside of a crucible main body () through a cover member opening (). A seed crystal () is disposed between a supporting portion () and a contact surface () of the projection () which is inserted into a guide opening (). The apparatus () for producing single crystals is configured such that the contact surface () presses the entire back surface of the seed crystal (), said back surface being on the reverse side of the crystal growth surface of the seed crystal (), against the projection () when a screw thread () that is formed on the projection () is screwed to a thread groove () that is formed on an engaging portion (). 1. A single crystal manufacturing apparatus comprising:a crucible main body that having a substantially cylindrical shape in which a bottom portion is formed at one end portion of the crucible main body and an opening portion is formed at another end of the crucible main body, a sublimation raw material being disposed at the bottom portion; anda capping member that closes the opening portion, on which a seed crystal being disposed at a position facing the sublimation raw material, whereinthe single crystal manufacturing apparatus sublimates the sublimation raw material and then recrystallizing a single crystal on the seed crystal,a guide portion having a conical face is mounted on the capping member, a diameter of the conical face being increased as going down in a growing direction of the single crystal,the capping member has a substantially columnar projection portion projecting inward of the crucible main body,a contacting face having a diameter that is equal to a diameter of the seed crystal or greater than the diameter of the seed crystal is formed at the projection portion, an engagement portion which has an aperture fitting to an outer diameter of the projection ...

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08-08-2013 дата публикации

ATOMIC LAYER DEPOSITION EPITAXIAL SILICON GROWTH FOR TFT FLASH MEMORY CELL

Номер: US20130200384A1
Автор: MIENO FUMITAKE

A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiHthermal cracking radical assisted by Ar flow and flash lamp annealing continuously. The second hydrogen-terminated silicon surface is capable of being added one or more layer of silicon through ALD epitaxy from SiHthermal cracking radical assisted by Ar flow and flash lamp annealing continuously. In one embodiment, the method is applied for making devices with thin-film transistor (TFT) floating gate memory cell structures which is capable for three-dimensional integration. 1. A method of growing an epitaxial silicon layer , the method comprising:providing a substrate including an oxygen-terminated silicon surface;forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface, the first hydrogen-terminated silicon surface being associated with a single Si—H bond for each surface silicon atom;{'sub': '4', 'forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface by breaking the Si—H bond and adding an atomic layer of silicon through atomic-layer deposition (ALD) epitaxy from SiHthermal cracking radical assisted by Ar flow and flash lamp annealing continuously;'}wherein:the second hydrogen-terminated silicon surface is associated with two Si—H bonds for each surface silicon atom;{'sub': '4', 'the second hydrogen-terminated silicon surface is capable of being added one or more layers of silicon through ALD epitaxy from SiHthermal cracking radical assisted by Ar flow and flash lamp annealing continuously.'}2. The method of wherein the substrate including an oxygen- ...

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29-08-2013 дата публикации

RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS

Номер: US20130220223A1
Принадлежит:

[Object] To provide a radical generator which can produce radicals at higher density. 1. A radical generator comprising:a supply tube for supplying a gas;a plasma-generating tube made of a dielectric material, the plasma-generating tube being connected to the supply tube at the downstream end thereof;a coil winding about the outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube;an electrode which covers the outer wall of the plasma-generating tube and which is disposed between the coil and the supply tube, for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma; anda parasitic-plasma-preventing tube which is made of a dielectric material, which is connected to the opening of the supply tube proximal to the connection site between the supply tube and the plasma-generating tube, and which covers the inner wall of the supply tube.2. A radical generator according claim 1 , further comprising:a parasitic-plasma-preventing tube which comprising a dielectric material, which is connected to the opening of the supply tube proximal to the connection site between the supply tube and the plasma-generating tube, and which covers the inner wall of the supply tube,wherein the supply tube comprising a conductive material.3. A radical generator according claim 2 , further comprising a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively coupled plasma to the center of the plasma-generating tube.4. A radical generator according to claim 2 , further comprising a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively ...

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12-09-2013 дата публикации

Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth

Номер: US20130233238A1
Принадлежит: IMEC

Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening. 1. A method comprising:providing a substrate comprising a first crystalline material, wherein the first crystalline material has a first lattice constant; a first level comprising a first opening extending through the first level, wherein a bottom of the first opening comprises the substrate, and', 'a second level on top of the first level, wherein the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening; and, 'providing a mask structure on the substrate, wherein the mask structure comprises the second crystalline material has a second lattice constant different than the first lattice constant, and', 'epitaxially growing the second crystalline material on the bottom of the first opening comprises trapping defects in the second crystalline material in at least one direction in the first opening., 'epitaxially growing a second crystalline material on the bottom of the first opening until the second crystalline material covers at ...

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19-09-2013 дата публикации

APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL

Номер: US20130239878A1
Принадлежит:

The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten. 1. An apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material , thereby to recrystallize the aluminum nitride onto a seed crystal , the apparatus comprising:a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, anda heating element which is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, whereinthe growth vessel comprises a main body which has the accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and whereinthe heating element is composed of a metal material containing tungsten.2. The apparatus for production of an aluminum nitride single crystal according to claim 1 , wherein the ...

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19-09-2013 дата публикации

LOAD LOCK HAVING SECONDARY ISOLATION CHAMBER

Номер: US20130239879A1
Принадлежит: ASM AMERICA, INC.

A load lock includes a chamber including an upper portion, a lower portion, and a partition between the upper portion and the lower portion, the partition including an opening therethrough. The load lock further includes a first port in communication with the upper portion of the chamber and a second port in communication with the lower portion of the chamber. The load lock includes a rack disposed within the chamber and a workpiece holder mounted on a first surface of the rack, wherein the rack and the workpiece holder are movable by an indexer that is capable of selectively moving wafer slots of the rack into communication with the second port. The indexer can also move the rack into an uppermost position, at which the first surface of the boat and the partition sealingly separate the upper portion and the lower portion to define an upper chamber and a lower chamber. Auxiliary processing, such as wafer pre-cleaning, or metrology can be conducted in the upper portion. 1. A method of transporting workpieces , the method comprising:loading a workpiece into a boat through a first port in communication with a first portion of a chamber of a load lock, the boat disposed in the chamber;transferring the workpiece to a workpiece holder mounted on a first surface of the boat;moving the boat towards a partition between the first portion of the chamber and a second portion of the chamber to sealably engage the partition with the first surface of the boat, wherein moving the boat comprises moving the workpiece holder into the second portion of the chamber, and sealably engaging the partition with the first surface of the boat;increasing the pressure of the second portion of the chamber; andunloading the workpiece through a second port in communication with the second portion of the chamber.2. The method of claim 1 , wherein the first portion of the chamber comprises a lower portion of the chamber and wherein the second portion of the chamber comprises an upper portion of the ...

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19-09-2013 дата публикации

Fabrication method and fabrication apparatus of group iii nitride crystal substance

Номер: US20130244406A1
Принадлежит: Sumitomo Electric Industries Ltd

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

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10-10-2013 дата публикации

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON

Номер: US20130263774A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph , wherein upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm , a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak is observed at a lower wavenumber than that of the TO peak.3. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the peak other than the TO peak and the LO peak has a peak intensity 0.3 or greater times the peak intensity of the TO peak.4. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the absolute amount of shift of the LO peak from 972 cmis 4 cmor more.5. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 4 , wherein the amount of shift of the LO peak from 972 cmis 4 cmor more.6. The seed material for liquid phase epitaxial growth of a ...

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17-10-2013 дата публикации

FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Номер: US20130269596A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. 1. A feed material for epitaxial growth of a monocrystalline silicon carbide , the feed material being used in a method for epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.2. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein a first-order diffraction peak corresponding to the (111) crystal plane is a main diffraction peak having the highest diffraction intensity among first-order diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.3. The feed material for epitaxial growth of a monocrystalline silicon carbide according to claim 1 , wherein the diffraction peak other than the diffraction peak corresponding to the (111) crystal plane includes at least one diffraction peak claim 1 , each corresponding to one of a (200) crystal plane claim 1 , a (220) crystal plane claim 1 , and a (311) crystal plane.4. The feed ...

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17-10-2013 дата публикации

SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE

Номер: US20130269597A1
Принадлежит: TOYO TANSO CO., LTD.

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed. 1. A seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide , the seed material being used in a method for liquid phase epitaxial growth of a monocrystalline silicon carbide and including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph ,wherein upon X-ray diffraction of the surface layer, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.2. The seed material for liquid phase epitaxial growth of a monocrystalline silicon carbide according to claim 1 , whereinupon X-ray diffraction of the surface layer at least one first-order diffraction peak is observed, each first-order diffraction peak corresponding to one of a (111) crystal plane, a (200) crystal plane, a (220) crystal plane, and a (311) crystal plane, andthe average crystallite diameter calculated from the at least one first-order diffraction peak is more than 700 A.3. The seed material for ...

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17-10-2013 дата публикации

CONTACT ON A HETEROGENEOUS SEMICONDUCTOR SUBSTRATE

Номер: US20130273722A1

A method for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer. 1. A method for producing a semiconductor device including plural zones made of a compound metal and semiconductor based compound , said method including the steps consisting of:on a support including at least one first semiconductor zone made of a first semiconductor material, and at least one second semiconductor zone made of a second semiconductor material, different from said first semiconductor material: forming a thin semiconductor layer in contact with said first semiconductor material and said second semiconductor material, wherein the thin semiconductor layer has a thickness, and is made from a given semiconductor material, both thickness and material of said thin semiconductor layer being chosen such that said thin semiconductor layer has a nucleation barrier lower than the nucleation barrier of at least one of the said first and second semiconductor zones,depositing of a metal layer on said thin semiconductor layer,annealing for a given duration and at a given temperature so as to form at least one first region made of a first compound of metal material and semiconductor material on said first semiconductor zone, and at least one second region made of a compound of metal material and semiconductor material on said second semiconductor zone.2. A method according to claim 1 , wherein said first semiconductor material is Si.3. A method according to claim 1 , wherein said second semiconductor material is Ge or SiGe4. A method according to claim 1 , wherein said given semiconductor material of said thin semiconductor layer is said second semiconductor material.5. A method according to claim 1 , ...

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24-10-2013 дата публикации

PRODUCTION METHOD FOR FLAT SUBSTRATE WITH LOW DEFECT DENSITY

Номер: US20130276696A1
Принадлежит:

The present invention discloses a production method for a flat substrate with low defect density. The method includes steps of: providing a substrate, performing selective growth of nanowires, performing lateral epitaxial growth of the nanowires, performing lateral coalescence of widened nanowires, performing high temperature annealing, and performing LED structure growth. The production method of the present invention generates vertical and lateral growth of the nanowires by choosing different concentrations of additives to produce a flat film, and generate a high efficiency LED semiconductor structure after annealing the flat film. 1. A production method for flat substrate with low defect density , comprising following steps of:providing a substrate, wherein the substrate is a base for growing subsequent layers, an un-doped semiconductor layer is formed on the substrate and an insulation layer is formed on the un-doped semiconductor layer, and the insulation layer has plural holes and is formed by coating an insulation material on the un-doped semiconductor layer, undergoing exposure and development the insulation material, and dry etching, so that the insulation layer functions as a selective growth mask with the holes;performing selective growth, wherein nanowires vertically grow on the un-doped semiconductor layer through the holes of the selective growth mask;performing lateral epitaxial growth, wherein the nanowires are grown laterally to form widened nanowires, the lateral epitaxial growth of the widened nanowires is controlled by adding additives of different concentration gradients;performing lateral coalescence, wherein a flat bump-free coalescence film from the top of the widened nanowires is formed;performing high temperature annealing, wherein a grain boundary at the junction of the widened nanowires is eliminated with a high temperature gas; andperforming LED structural growth, wherein a monocrystalline semiconductor structure grows from the flat bump ...

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24-10-2013 дата публикации

EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ILLUMINATION DEVICE

Номер: US20130277206A1
Принадлежит:

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α—AlOsubstrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α—AlOsubstrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α—AlOsubstrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur. 1. An epitaxial film forming method that uses a sputtering apparatus having a target electrode on which a target can be arranged and a substrate holder on which a substrate can be arranged toward the target electrode and provided with a heater electrode and a bias electrode , and that epitaxially grows a group III nitride semiconductor thin film by a sputtering method on an α—AlOsubstrate arranged on the substrate holder , the method comprising the steps of:{'sub': 2', '3, 'arranging the α—AlOsubstrate on the substrate holder; and'}{'sub': 2', '3, 'forming an epitaxial film of the group III nitride semiconductor thin film immediately on the α—AlOsubstrate arranged on the substrate holder by applying high-frequency power to the target electrode and by applying high-frequency bias power to the bias electrode,'}{'sub': 2', '3, 'wherein the step of forming an epitaxial film of the group III nitride semiconductor thin film immediately on the α—AlOsubstrate;'}{'sub': 2', '3, 'maintains the α—AlOsubstrate at a predetermined temperature by the heater electrode;'}emits a group III nitride molecule from the target ...

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24-10-2013 дата публикации

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

Номер: US20130280466A1
Принадлежит: II VI Inc

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

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07-11-2013 дата публикации

High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

Номер: US20130292801A1
Принадлежит: International Business Machines Corp

A semiconductor structure is provided that includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a first sacrificial material layer having a first thickness, a first semiconductor device layer, a second sacrificial material layer having a second thickness, and a second semiconductor device layer, wherein the first thickness is less than the second thickness.

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21-11-2013 дата публикации

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

Номер: US20130305983A1
Принадлежит: SiCrystal AG

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

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21-11-2013 дата публикации

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

Номер: US20130309496A1
Принадлежит: II-VI Incorporated

In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material. 1. A method of forming polycrystalline SiC material comprising the steps of:(a) positioning bulk carbon at a first location inside of a graphite crucible, wherein the bulk carbon is gas-permeable and vapor-permeable;(b) positioning a mixture comprised of elemental silicon (Si) and elemental carbon (C) at a second location inside of the graphite crucible;(c) following steps (a) and (b), removing adsorbed gas, or moisture, or volatiles or some combination of adsorbed gas, moisture and volatiles from the mixture and the bulk carbon positioned inside of the graphite crucible by heating the mixture and the bulk carbon positioned inside of the enclosed crucible to a first temperature which is below the melting point of the elemental Si;(d) following step (c), forming as-synthesized silicon carbide (SiC) inside of the crucible by heating the mixture positioned inside of the enclosed crucible to a second temperature sufficient to initiate a reaction between the elemental Si and the elemental C of the mixture that forms the as-synthesized SiC inside of the crucible ...

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21-11-2013 дата публикации

HIGH THROUGHPUT SEMICONDUCTOR DEPOSITION SYSTEM

Номер: US20130309848A1
Принадлежит: ALLIANCE FOR SUSTAINABLE ENERGY, LLC

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 μm/minute. 1. A reactor for deposition of multiple layers of a semiconductor device using hydride vapor phase epitaxy (HVPE) , the reactor comprising:a reaction tube with an interior space defining a travel path for a substrate;a first reaction chamber defining a first HVPE deposition zone open to the interior space of the reaction tube; anda second reaction chamber defining a second HVPE deposition zone open to the interior space of the reaction tube, wherein the first and second reaction chambers are physically spaced apart along the reaction tube a predefined distance.2. The reactor of claim 1 , wherein the first HVPE deposition zone is selectively heated to a first temperature range and wherein the second HVPE deposition zone is selectively heated to a second temperature range.3. The reactor of claim 1 , further including a separation mechanism operable to block flow of gases between the first and second HVPE deposition zones.4. The reactor of claim 2 , wherein the separation mechanism comprises an assembly operable to provide a curtain of flowing inert gas in the interior ...

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28-11-2013 дата публикации

METHOD FOR MANUFACTURING SOI WAFER

Номер: US20130316522A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method. 1. A method for manufacturing an SOI wafer , the method by which a silicon oxide film is formed on a surface of a bond wafer made of a silicon single crystal , an ion implanted layer is formed inside the bond wafer by implanting at least one gas ion of a hydrogen ion and a rare gas ion through the silicon oxide film , and , after an ion implanted surface of the bond wafer and a surface of a base wafer made of a silicon single crystal are bonded through the silicon oxide film , the bond wafer is delaminated at the ion implanted layer to fabricate the SOI wafer having no oxide film in a terrace portion of a periphery of the base wafer and using the silicon oxide film as a buried oxide film ,treatment that removes an outer periphery of the buried oxide film is performed in such a way as to obtain a structure in which a peripheral end of an SOI layer of the SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer.2. ...

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05-12-2013 дата публикации

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof

Номер: US20130320275A1
Принадлежит:

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component. 1. A crystal growth method comprising:(a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a growth crucible that is disposed inside of a furnace chamber, the growth crucible disposed inside of a furnace chamber defining a growth ambient; and(b) sublimation growing a SiC single crystal on the SiC seed crystal via precipitation of sublimated SiC source material on the SiC seed crystal in the presence of a reactive atmosphere in the growth ambient that removes donor and/or acceptor background impurities from the growth ambient.2. The method of claim 1 , wherein the reactive atmosphere includes a halide vapor compound and one or more gases.3. The method of claim 2 , wherein:the halide vapor compound is comprised of (1) fluorine or chlorine, and (2) tantalum or niobium; andthe one or more gases includes argon, hydrogen, or a mixture of argon+hydrogen.4. The method of claim 2 , further including:(c) following step (b), changing the atmosphere in the growth ambient to a non-reactive atmosphere; and(d) following step (c), introducing ...

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12-12-2013 дата публикации

Method for producing silicon carbide crystal

Номер: US20130327265A1
Принадлежит: Sumitomo Electric Industries Ltd

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

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19-12-2013 дата публикации

METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND

Номер: US20130333613A1
Автор: Einav Moshe
Принадлежит: Mosiac Crystals Ltd.

Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal. 1. Method for crystal growth from a surfactant of a metal nonmetal (MN) compound , comprising the procedures of:providing a seed crystal;introducing atoms of a first metal to said seed crystal in order to form a thin liquid metal wetting layer on at least one surface of said seed crystal;setting a temperature of said seed crystal below a minimal temperature required for dissolving MN molecules in said thin liquid metal wetting layer and above a melting point of said first metal, each one of said MN molecules being formed from at least one atom of a second metal and at least one atom of a first nonmetal;introducing said MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of said thin liquid metal wetting layer between said MN surfactant monolayer and said at least one surface of said seed crystal; andregulating a thickness of said thin liquid metal wetting layer such that at least some of said MN molecules of said MN surfactant monolayer couple with said at least one surface of said seed crystal, thereby growing an epitaxial layer of said MN compound on said seed crystal.2. The ...

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26-12-2013 дата публикации

DISCHARGE SURFACE TREATMENT APPARATUS AND DISCHARGE SURFACE TREATMENT METHOD

Номер: US20130344651A1
Принадлежит: Mitsubishi Electric Corporation

A discharge surface treatment apparatus supplies an electrode material to a surface of a treatment target member by generating pulsating discharges across an inter-electrode gap to form a coating of the electrode material, and includes a switching element that turns application of a voltage from a power source to the inter-electrode gap on/off, a capacitance element that is connected to the switching element in parallel with the inter-electrode gap, an inductance element that is connected in series between both of the switching element and the capacitance element and the inter-electrode gap, and a control unit that includes a function of periodically performing on/off so that an induced electromotive force generated in the inductance element due to a change in the current of discharge generated across the inter-electrode gap can be used as a voltage that induces the next discharge 1. A discharge surface treatment apparatus that supplies an electrode material to a surface of a treatment target member by generating pulsating discharges across an inter-electrode gap , which is a clearance between a discharge surface treatment electrode and the treatment target member , and forms a coating of the electrode material , comprising:a switching element that turns application of a voltage from a power source to the inter-electrode gap on/off;a capacitance element that is connected to the switching element to be in parallel with the inter-electrode gap between the switching element and the inter-electrode gap;an inductance element that is connected in series between both of the switching element and the capacitance element and the inter-electrode gap; anda control unit that includes a function of periodically performing on/off so that an induced electromotive force generated in the inductance element due to a change in the current of discharge generated across the inter-electrode gap can be used as a voltage that induces the next discharge.2. The discharge surface treatment ...

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02-01-2014 дата публикации

Layer system of a silicon-based support and a heterostructure applied directly onto the support

Номер: US20140001513A1
Автор: Alois Krost, Armin Dadgar

The invention relates to a layer system composed of a silicon-based carrier having a single-crystal surface and of a heterostructure applied directly to the single-crystal surface of the carrier. The layer system according to the invention is characterized in that the carrier comprises a silicon substrate doped with one or more dopants, wherein the doped portion extends across at least 30% of the thickness of the doped silicon substrate and a concentration of the dopants in the doped portion of the silicon substrate is predetermined such that a corrected limiting concentration GK meets the condition of formula (1): GK = ∑ m = i n   N dot i 1 + 5 × 10 22   cm - 3 N dot i   - E A i / 0.095   eV ≥ 1 × 10 15   cm - 3 ( 1 ) wherein i represents the respective dopant in the silicon substrate, N dot represents the dopant concentration in cm −3 and E A represents an energy barrier of the dopant in eV, which energy barrier inhibits dislocation glide.

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02-01-2014 дата публикации

SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF

Номер: US20140001549A1
Принадлежит: Freescale Semiconductor, Inc.

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region, which is separated from the isolation structure by a portion of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s). 1. A semiconductor device , comprising:a semiconductor substrate having a first conductivity type and a top substrate surface;a buried layer below the top substrate surface, wherein the buried layer has a second conductivity type that is different from the first conductivity type;a sinker region between the top substrate surface and the buried layer, wherein the sinker region has the second conductivity type, and an isolation structure is formed by the sinker region and the buried layer;an active device in the semiconductor substrate within a portion of the substrate contained by the isolation structure, wherein the active device includes body region of the second conductivity type, wherein the body region and the isolation structure are separated by a portion of the semiconductor substrate having the first conductivity type; anda resistor circuit connected between the isolation structure and the body region.2. The semiconductor device of claim 1 , wherein the resistor circuit comprises:a polycrystalline silicon ...

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02-01-2014 дата публикации

Silicon carbide crystal and method of manufacturing silicon carbide crystal

Номер: US20140004303A1
Автор: Makoto Sasaki
Принадлежит: Sumitomo Electric Industries Ltd

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

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27-03-2014 дата публикации

APPARATUS FOR ATTACHING SEED

Номер: US20140082916A1
Принадлежит: LG INNOTEK CO., LTD.

Disclosed is an apparatus for attaching a seed. The apparatus for attaching the seed includes a holder fixing part to fix a seed holder; a pressing part to apply a pressure to the seed holder; and a seed fixing part provided under the seed holder to fix the seed. 1. An apparatus for attaching a seed , the apparatus comprising:a holder fixing part to fix a seed holder;a pressing part to apply a pressure to the seed holder; anda seed fixing part provided under the seed holder to fix the seed.2. The apparatus of claim 1 , wherein the seed fixing part includes a pore.3. The apparatus of claim 2 , wherein at least one pore is provided claim 2 , and intervals between pores correspond to each other.4. The apparatus of claim 3 , wherein the pore has a size in a range of 100 um to 1 mm.5. The apparatus of claim 1 , wherein the seed fixing part includes graphite.6. The apparatus of claim 5 , wherein the graphite has a form of a mesh.7. The apparatus of claim 1 , wherein the seed fixing part is provided therein with a groove to seat the seed.8. The apparatus of claim 7 , wherein the groove has a depth smaller than a thickness of the seed.9. The apparatus of claim 8 , wherein the groove has a diameter corresponding to a diameter of the seed.10. The apparatus of claim 1 , further comprising a heating part under the seed fixing part.11. The apparatus of claim 1 , wherein the holder fixing part includes a locking part to lock the seed holder.12. The apparatus of claim 1 , wherein the pressing part is provided on the seed holder.13. A method for attaching a seed claim 1 , the method comprising:placing a seed holder in a holder fixing part;fixing a seed to a seed fixing part provided under the holder fixing part; andattaching the seed and the seed holder.14. The method of claim 13 , wherein claim 13 , in the attaching of the seed and the seed holder claim 13 , the holder claim 13 , the holder fixing part moves downward.15. The method of claim 13 , wherein claim 13 , in the attaching ...

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27-03-2014 дата публикации

MANUFACTURING METHOD FOR A SEMICONDUCTOR ON INSULATOR TYPE SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS

Номер: US20140084290A1
Принадлежит:

The invention relates to a method for manufacturing a semiconductor on insulator type substrate for radiofrequency applications, comprising the following steps in sequence: (a) provision of a silicon substrate () with an electrical resistivity of more than 500 Ohm·cm, (b) formation of a polycrystalline silicon layer () on said substrate (), said method comprising a step between steps a) and b) to form a dielectric material layer (), different from a native oxide layer, on the substrate (), between 0.5 and 10 nm thick. 2. The method of claim 1 , further comprising the following steps in sequence after step (b):(c) formation of a dielectric material layer on said polycrystalline silicon layer and/or on a semiconducting material layer of a donor substrate,(d) bonding of the substrate obtained in step (c) on the donor substrate, the dielectric layer(s) formed in step (c) being at the interface,(e) separation of said thin layer from the donor substrate.3. The method of claim 1 , wherein the concentration of doping agents in the polycrystalline silicon layer is less than or equal to 10cm claim 1 , and preferably less than or equal to 10cm.4. The method of claim 1 , wherein the polycrystalline silicon layer is between 100 and 10000 nm thick claim 1 , and preferably between 300 and 3000 nm.5. The method of claim 1 , wherein the dielectric material of layer formed between the substrate and the polycrystalline silicon layer is silicon oxide.6. A base substrate for the formation of a semiconductor on insulator type substrate comprising a silicon substrate with an electrical resistivity of more than 500 Ohm·cm and a polycrystalline silicon layer claim 1 , said base substrate further comprising a dielectric material layer claim 1 , different from a native oxide layer claim 1 , between the substrate and the polycrystalline silicon layer claim 1 , between 0.5 and 10 nm thick.7. A semiconductor on insulator type substrate for radiofrequency applications claim 1 , comprising a ...

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03-04-2014 дата публикации

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE

Номер: US20140091325A1
Принадлежит:

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less. 1. A method for producing an SiC single crystal , having the following constitution:(a) the method for producing an SiC single crystal repeats an a-plane growth step n (n≧2) times;(b) a first a-plane growth step is a step for carrying out the a-plane growth of an SiC single crystal on a first growth plane by using a first seed crystal having the first growth plane with an offset angle from the {0001} plane of 80° to 100°;(c) a k-th a-plane growth step (2≦k≦n) is a step for cutting out a k-th seed crystal having a k-th growth plane with a growth direction 45° to 135° different from the growth direction of a (k−1)-th a-plane growth step and an offset angle from the {0001} plane of 80° to 100° from a (k−1)-th grown crystal obtained in the (k−1)-th a-plane growth step, and carrying out the a-plane growth of an SiC single crystal on the k-th growth plane; and{'sub': 'facet', 'claim-text': {'br': None, 'i': S', 'S', '/S, 'sub': facet', '1', '2, '(%)=×100\u2003\u2003(A)'}, '(d) the k-th a-plane growth step (1≦k≦n) is a step for carrying out the a-plane growth of an SiC single crystal on the k-th growth plane so that an area ratio Sof a Si-plane side facet region represented by the equation (A) is maintained at 20% or less{'sub': 1', '2, 'where Sis the sum of the total area of areas obtained by projecting polar plane steps of Si-plane side on the k-th growth plane and the total area of areas obtained by projecting {1-100} plane facets sandwiched between the polar plane steps of Si-plane side on the k-th growth plane, and Sis the total area of the k-th growth plane.'}2. The method for producing an SiC single crystal according to claim 1 ,{'sub': '1', 'wherein the ...

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03-04-2014 дата публикации

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Номер: US20140093671A1
Принадлежит:

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138.-. (canceled)39. An AlN single crystal having at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 ,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 ,500 nm.40. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm.41. The AlN single crystal of claim 40 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 40 ,500 nm.42. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.43. The AlN single crystal of claim 39 , wherein the AlN single crystal has a microvoid density less than approximately 10cm.44. The AlN single crystal of claim 39 , wherein the AlN single crystal is substantially crack-free.45. The AlN single crystal of claim 39 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c-face and an Al polarity.46. The AlN single crystal of claim 40 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c ...

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07-01-2016 дата публикации

CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20160002820A1
Принадлежит:

A crucible has a bottom and a cylindrical side surface. In the crucible, a source material is sublimated to grow a single crystal. The crucible includes a third region configured to receive a source material, a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom. The crucible includes a first wall and a second wall inside the side surface. The first wall surrounds the first region, the second wall surrounds the second region. The crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface. The distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom. 1. A crucible for sublimating a source material to grow a single crystal , comprising:a bottom; anda cylindrical side surface,wherein the crucible includes a third region configured to receive the source materiala second region extending from the third region in a direction away from the bottom, anda first region extending from the second region in a direction away from the bottom,the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region,the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface,a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom,an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with ...

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04-01-2018 дата публикации

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

Номер: US20180002828A1
Автор: Loboda Mark
Принадлежит:

An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0. 1. An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth , comprising:a quartz vacuum chamber;a cylindrical RF induction coil positioned coaxially with the quartz vacuum chamber;an RF power supply coupled to the RF induction coil;a reaction cell configured for containing a seed crystal and source material, the reaction cell defining an axial length measured as the reaction cell height along its axis of rotational symmetry;an arrangement of insulation layers around the cell configured for generating a thermal gradient inside the reaction cell;a support for placing the reaction cell inside the quartz vacuum chamber;wherein the RF induction coil is configured for generating a uniform electromagnetic field around the reaction cell when the reaction cell is positioned co-axially with the induction coil, coaxially to the quartz vacuum chamber, and near or at the center of the coil with respect to its axial length; and,wherein a ratio of height of the RE induction coil, measured along the axis of rotational symmetry, to the axial length of the reaction cell is from 2.5 to 4.0.2. (canceled)3. The apparatus of ...

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02-01-2020 дата публикации

VAPOR DEPOSITION MASK AND MANUFACTURING METHOD FOR VAPOR DEPOSITION MASK

Номер: US20200002801A1
Автор: NAKAJIMA Shinsaku
Принадлежит:

A valid portion formed on a mask sheet includes a first region and a second region. The first region is provided for each active region of a vapor deposited substrate, and has a shape corresponding to a shape of each active region. The second region is located outside the first region, and is provided with a covering portion configured to cover a plurality of vapor deposition holes. 1. A vapor deposition mask configured to be used to vapor-deposit a vapor-deposition layer on each of pixels of a vapor deposited substrate provided with a plurality of active regions on which the pixels contributing to displaying are arranged , the vapor deposition mask comprising:a mask sheet provided with a valid portion provided for each of the plurality of active regions and including a plurality of vapor deposition holes arranged,wherein the valid portion includes a first region and a second region,the first region has a shape corresponding to a shape of each of the plurality of active regions,the second region is a region different from the first region, and is provided with a covering portion configured to cover a portion of the plurality of vapor deposition holes, andthe covering portion is made of a photocurable resin.2. The vapor deposition mask according to claim 1 ,wherein the covering portion is provided to extend across the plurality of vapor deposition holes present in the second region.3. The vapor deposition mask according to claim 1 ,wherein the covering portion is provided on a second surface of the mask sheet located on an opposite side to a first surface facing the vapor deposited substrate.45-. (canceled)6. The vapor deposition mask according to claim 1 ,wherein the valid portion has a square or rectangular shape.7. The vapor deposition mask according to claim 1 ,wherein the first region includes a notch in which the second region protrudes from one side of the first region toward an interior direction, andthe plurality of vapor deposition holes in a region located ...

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02-01-2020 дата публикации

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Номер: US20200002841A1
Принадлежит:

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate. 138.-. (canceled)39. A bulk single crystal of AlN having a thickness greater than 0.1 mm and exhibiting a triple-crystal X-ray rocking curve of less than 50 arcsec full width at half maximum (FWHM) for a (0002) reflection.40. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 1 mm.41. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 5 mm.42. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤10 cm.43. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤1 cm.44. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.45. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.46. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 25 mm.47. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 50 mm.48. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at most 1 mm.49. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is at least 1 cmand at most 100 cm.50. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is at least 10cmand at most 10cm.51. The bulk single ...

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07-01-2021 дата публикации

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

Номер: US20210002785A1
Принадлежит: SiCrystal GmbH

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

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07-01-2021 дата публикации

System For Horizontal Growth Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

Номер: US20210002787A1
Принадлежит: SiCrystal GmbH

A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value. 1. A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) , the system comprising:a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside, the reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.2. The system of claim 1 , wherein the angle from horizontal is between −15° and +15 with respect to a horizontal plane perpendicular to the direction of gravity claim 1 , and/or the reactor is horizontally oriented with respect to the gravity direction to accommodate the PVT growth structure.3. The system of claim 1 , wherein the PVT growth structure includes a source material compartment containing a source material and a pair of growth compartments each on a side of the source material compartment claim 1 , a crystal seed is disposed in each growth compartment and is at a certain distance along a longitudinal axis from the source material for growing respective single crystals from the source material claim 1 , the source material is selected for growing single crystals of a semiconductor material from a group including at least silicium carbide claim 1 , 4H-SiC ...

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03-01-2019 дата публикации

METHOD FOR CLEANING SiC MONOCRYSTAL GROWTH FURNACE

Номер: US20190003046A1
Принадлежит: SHOWA DENKO K.K.

A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C. 1. A method of cleaning a SiC monocrystal growth furnace by using a gas to clean a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C—SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis , the method comprising:flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through an inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, whereinthe mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is at least 200° C. but not more than 500° C.2. The method of cleaning a SiC monocrystal growth furnace according to claim 1 , wherein the inert gas is selected from the group consisting of nitrogen gas claim 1 , argon gas and helium gas.3. The method of cleaning a SiC monocrystal growth furnace according to claim ...

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07-01-2016 дата публикации

Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate

Номер: US20160005608A1
Автор: Mazur Eric, Shen Mengyan
Принадлежит:

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. 147-. (canceled)48. A method for processing a substrate , comprising:disposing a solid substance on a surface of a substrate,placing said surface in contact with a fluid,irradiating said surface of the substrate with a plurality of laser pulses having a pulse width in a range of about 50 femtoseconds to a few nanoseconds so as to generate inclusions comprising at least one constituent of said solid substance within an upper layer of the substrate.49. The method of claim 48 , wherein said laser pulses have a pulse width in a range of about 50 femtoseconds to about 500 femtoseconds.50. The method of claim 48 , wherein said solid substance comprises an electron donating constituent.51. The method of claim 50 , wherein said electron-donating constituent comprises a sulfur-containing substance such that said inclusions comprise sulfur.52. The method of claim 48 , wherein said solid substance comprises sulfur powder.53. The method of claim 48 , wherein the fluid is a liquid.54. The method of claim 53 , wherein said liquid comprises an aqueous solution.55. The method of claim 53 , wherein said liquid comprises any of water claim 53 , alcohol claim 53 , sulfuric acid and silicon oil.56. The method of claim 48 , wherein said substrate comprises a semiconductor substrate.57. The method of claim 56 , wherein said semiconductor substrate is any of a doped and undoped silicon wafer.58. The method of claim 48 ...

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07-01-2016 дата публикации

MANUFACTURING METHOD OF GRAPHENE MODULATED HIGH-K OXIDE AND METAL GATE MOS DEVICE

Номер: US20160005609A1

A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOon the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved. The fluorinated graphene can enable the graphene to become a high-quality insulator on the basis of keeping the excellent property of the graphene, so that the influence thereof on the electrical property of the Ge-based device is reduced. By adopting the ozone plasmas to treat the Ge-based graphene and then by adopting the atomic layer deposition technology, an ultrathin Hf-based high-k gate dielectric layer can be obtained. 1. A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device , characterized in that the manufacturing method at least comprises the following steps:1) introducing a graphene thin film on a Ge-based substrate;2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer;3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology;4) forming a metal electrode on the surface of the high-k gate dielectric.2. The ...

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04-01-2018 дата публикации

MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULATOR STRUCTURES

Номер: US20180005815A1
Принадлежит:

A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. 1. A method of forming a multilayer structure , the method comprising:forming a pattern comprising a plurality of mesa islands on a semiconductor-on-insulator structure, wherein the semiconductor-on-insulator structure comprises a single crystal semiconductor handle wafer, a dielectric layer in interfacial contact with the single crystal semiconductor handle wafer, and a single crystal semiconductor device layer in interfacial contact with the dielectric layer, and further wherein the pattern comprising the plurality of mesa islands is formed in the single crystal semiconductor device layer; andforming a Group IIIA-nitride layer on the plurality of mesa islands.2. The method of wherein the single crystal semiconductor handle wafer comprises two major claim 1 , generally parallel surfaces claim 1 , one of which is a front surface of the single crystal semiconductor handle wafer and the other of which is a back surface of the single crystal semiconductor handle wafer claim 1 , a circumferential edge joining the front and back surfaces of the single crystal semiconductor handle wafer claim 1 , a bulk region between the front and back surfaces claim 1 , and a central plane of the single crystal semiconductor handle wafer between the front and back surfaces of the single crystal semiconductor handle wafer.3. The method of wherein the single crystal semiconductor handle wafer comprises a semiconductor material selected from the group consisting of silicon claim 1 , silicon carbide claim 1 , sapphire claim 1 , and aluminum nitride.4. (canceled)5. The method of wherein the dielectric ...

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02-01-2020 дата публикации

Integrated Circuit Structure With Non-Gated Well Tap Cell

Номер: US20200006484A1
Принадлежит:

The present disclosure provides a method that includes receiving a semiconductor substrate that includes an integrated circuit (IC) cell and a well tape cell surrounding the IC cell; forming first fin active regions in the well tape cell and second fin active regions in the IC cell; forming a hard mask within the well tape cell, wherein the hard mask includes openings that define first source/drain (S/D) regions on the first fin active region of the well tape cell; forming gate stacks on the second fin active regions within the IC cell and absent from the well tape cell, wherein the gate stacks define second S/D regions on the second fin active regions; epitaxially growing first S/D features in the first S/D regions using the hard mask to constrain the epitaxially growing; and forming contacts landing on the first S/D features within the well tape cell. 1. A method , comprising:receiving a semiconductor substrate that includes an integrated circuit (IC) cell and a well tape cell surrounding the IC cell;forming first fin active regions in the well tape cell and second fin active regions in the IC cell;forming a hard mask within the well tape cell, wherein the hard mask includes openings that define first source/drain (S/D) regions on the first fin active regions of the well tape cell;forming gate stacks on the second fin active regions within the IC cell and absent from the well tape cell, wherein the gate stacks define second S/D regions on the second fin active regions;epitaxially growing first S/D features in the first S/D regions using the hard mask to constrain the epitaxially growing; andforming contacts landing on the first S/D features within the well tape cell.2. The method of claim 1 , wherein the epitaxially growing further includes epitaxially growing second S/D features on the second S/D regions of the second fin active regions within the IC cell using the gate stacks to constrain the epitaxially growing.3. The method of claim 1 , further comprising ...

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08-01-2015 дата публикации

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

Номер: US20150010726A1
Принадлежит: Sumitomo Electric Industries, Ltd.

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container. 1. A method of manufacturing a silicon carbide single crystal , comprising the steps of:preparing a crucible having a first side and a second side opposite to said first side;arranging a solid source material for growing silicon carbide with a sublimation method, on said first side in said crucible;arranging a seed crystal made of silicon carbide on said second side in said crucible;arranging said crucible in a heat insulating container, said heat insulating container having an opening facing said second side of said crucible;heating said crucible such that said solid source material sublimes and recrystallizes on said seed crystal; andmeasuring a temperature on said second side of heated said crucible through said opening in said heat insulating container, said opening in said heat insulating container having a tapered inner surface narrowed toward outside of said heat insulating container.2. The method of manufacturing a silicon carbide single crystal according to claim 1 , whereina direction of normal of said tapered inner surface of said opening in said heat insulating container is inclined by not smaller than 120° and not greater than 170°, with respect to a direction from said first side of said crucible to said second side of said crucible.3. The method of manufacturing a silicon ...

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27-01-2022 дата публикации

MANUFACTURING METHOD OF SILICON CARBIDE WAFER AND SEMICONDUCTOR STRUCTURE

Номер: US20220025547A1
Автор: Lin Ching-Shan
Принадлежит: GlobalWafers Co., Ltd.

A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided. 1. A manufacturing method of a silicon carbide wafer , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor; 'passing an argon gas into the reactor, wherein a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours;', 'reducing a nitrogen content in the reactor, comprisingheating the reactor and the raw material to form a silicon carbide material on the seed;cooling the reactor and the raw material to obtain a silicon carbide ingot; andcutting the silicon carbide ingot to obtain a plurality of silicon carbide wafers.2. The manufacturing method as described in claim 1 , wherein reducing the nitrogen content in the reactor comprises: before passing the argon gas into the reactor claim 1 , performing a first vacuum process on the reactor claim 1 , such that an air pressure in the reactor is 0.1 torr to 100 torr.3. The manufacturing method as described in claim 1 , wherein a resistivity of the silicon carbide ingot is 0.1 ohm/cm to 10 ohms/cm claim 1 , and a resistivity of each of the silicon carbide wafers is 0.1 ohm/cm to 10 ohms/cm.4. The ...

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14-01-2021 дата публикации

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Номер: US20210010157A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view. 13-. (canceled)4. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top portion thereof , a seed crystal substrate is disposed at a center of an upper portion inside the growth container , a silicon carbide raw material is disposed at a lower portion of the growth container , and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate , whereinto allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to the center of the seed crystal substrate disposed inside the growth container,a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed ...

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14-01-2021 дата публикации

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Номер: US20210010161A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

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09-01-2020 дата публикации

Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same

Номер: US20200010973A1
Принадлежит: LG CHEM, LTD.

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): 1. A silicon fusion composition for a solution growth method for forming a silicon carbide single crystal , comprising:silicon, a first metal (M1), scandium (Sc) and aluminum (Al), [{'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1., 'as represented by the following Formula 12. The silicon fusion composition of claim 1 , wherein:the first metal (M1) is one or more selected from the group consisting of titanium (Ti), chromium (Cr), vanadium (V), yttrium (Y), manganese (Mn), iron (Fe), cobalt (Co), boron (B), cerium (Ce), lanthanum (La) and praseodymium (Pr).3. The silicon fusion composition of claim 1 , wherein:in Formula 1, a is more than 0.5 and less than 0.7, b is more than 0.2 and less than 0.4, and d is more than 0.01 and less than 0.05.4. The silicon fusion composition of claim 1 , wherein:the silicon fusion composition has a carbon solubility of 5% or more.5. A silicon fused solution claim 1 , comprising: the silicon fusion composition of and carbon claim 1 , wherein the scandium increases a carbon solubility in the silicon fused solution.6. A manufacturing method of a silicon carbide single crystal comprising:preparing a silicon carbide seed crystal; {'br': None, 'sub': a', 'b', 'c', 'd, 'SiM1ScAl\u2003\u2003(Formula 1)'}, 'preparing a silicon fusion composition comprising: silicon (Si), a first metal (M1), scandium (Sc) and aluminum (Al), as represented by the following Formula 1;'}wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6 m c us nire than 0.01 and less than 0.1, and d is ...

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09-01-2020 дата публикации

Method for evaluating quality of sic single crystal body and method for producing silicon carbide single crystal ingot using the same

Номер: US20200010974A1
Принадлежит: Showa Denko KK

A method for evaluating the quality of a SiC single crystal by a non-destructive and simple method; and a method for producing a SiC single crystal ingot with less dislocation and high quality with good reproducibility utilizing the same. The method for evaluating the quality of a SiC single crystal body is based on the graph of a second polynomial equation obtained by differentiating a first polynomial equation, the first polynomial equation approximating the relation between a peak shift value and a position of the measurement point and the peak shift value being obtained by an X-ray rocking curve measurement. The method for producing a SiC single crystal ingot manufactures a SiC single crystal ingot by a sublimation recrystallization method using, as a seed crystal, the SiC single crystal body evaluated by the evaluation method.

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09-01-2020 дата публикации

Two-stage seeded growth of large aluminum nitride single crystals

Номер: US20200010975A1
Принадлежит: Crystal IS Inc

In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

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15-01-2015 дата публикации

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEVICE, AND METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20150013590A1
Принадлежит:

The aim of the present invention is to provide a seed crystal holding shaft that is used in a device for producing single crystals by a solution process that allows for faster growth of SiC single crystals than in the past, and a method for producing single crystals by the solution process. The seed crystal holding shaft used in a device for producing single crystals by the solution process is a seed crystal holding shaft wherein at least a portion of a side of the seed crystal holding shaft is covered by a reflectance member having a higher reflectance than the reflectance of the seed crystal holding shaft and the reflector member is disposed such that there is a space between the reflector member and the seed crystals held on the end face of the seed crystal holding shaft. 1. A seed crystal holding shaft to be used in a single crystal production device employed in a solution process , whereinat least a portion of the side face of the seed crystal holding shaft is covered with a reflector member having higher reflectance than the reflectance of the seed crystal holding shaft, andthe reflector member is disposed so as to leave a gap between the reflector member and the seed crystal held on the end face of the seed crystal holding shaft.2. The seed crystal holding shaft according to claim 1 , wherein at least 50% of the side face of the seed crystal holding shaft is covered by the reflector member.3. The seed crystal holding shaft according to claim 1 , wherein the reflectance of the reflector member is 0.4 or greater.4. The seed crystal holding shaft according to claim 1 , wherein the reflector member is a carbon sheet.5. The seed crystal holding shaft according to claim 4 , wherein the average thickness of the carbon sheet is 0.05 mm or greater.6. The seed crystal holding shaft according to claim 1 , wherein the seed crystal holding shaft is made of graphite.7. A method for producing a SiC single crystal by a solution process in which a SiC seed crystal held on a ...

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14-01-2021 дата публикации

SEMICONDUCTOR FILM, METHOD OF FORMING SEMICONDUCTOR FILM, COMPLEX COMPOUND FOR DOPING, AND METHOD OF DOPING

Номер: US20210013035A1
Принадлежит:

A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×10/cmor less and electron mobility that is 1 cm/Vs or more. 130-. (canceled)31. A complex compound comprising:a dopant;a halogen;a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted.32. The complex compound of claim 31 ,wherein the hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted is a hydrocarbon group comprising a substituent that is a cyano group.33. The complex compound of claim 31 ,wherein the hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted comprises two or more substituents.34. The complex compound of claim 31 ,wherein the halogen is chlorine.35. The complex compound of claim 31 , wherein{'sup': l', '2', '3, 'sub': l', 'm', 'n, 'the complex compound is represented by a chemical formula that is XMRRR,'}{'sup': 1', '2', '2', '1', '1', '3', '1', '2', '1', '2, 'wherein X represents a halogen atom, M represents a dopant, Rrepresents a hydrocarbon group that is optionally substituted or a heterocyclic group that is optionally substituted, Rrepresents a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted and Ris the same as Ror ...

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18-01-2018 дата публикации

SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

Номер: US20180016706A1
Принадлежит: SHOWA DENKO K.K.

An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer. 1. An SiC epitaxial wafer comprising an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane ,wherein a trapezoidal defect included in the SiC epitaxial wafer comprises an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow.2. The SiC epitaxial wafer according to claim 1 , wherein a ratio of the inverted trapezoidal defect in the trapezoidal defect is 50% or more.3. The SiC epitaxial wafer according to claim 1 , wherein the inverted trapezoidal defect comprises an inverted trapezoidal defect having a length of the lower base on the downstream side of the step flow of 0 and a triangular shape.4. A method for manufacturing an SiC epitaxial wafer which is a method for manufacturing the SiC epitaxial wafer according to claim 1 , the method comprising:an etching step for etching an SiC single crystal substrate; andan epitaxial growth step for growing an epitaxial layer on the SiC single crystal substrate after etching,wherein in the epitaxial growth step, a concentration ratio C/Si of a Si-based source gas and a C-based source gas is set to 1.0 or less.5. The method for manufacturing an SiC epitaxial wafer according to claim 4 , wherein a temperature in the epitaxial growth step is set to 1 claim 4 ,630° C. or less.6. The method for manufacturing ...

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21-01-2016 дата публикации

METHOD OF SEMICONDUCTOR ARRANGEMENT FORMATION

Номер: US20160020302A1
Принадлежит:

Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.

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16-01-2020 дата публикации

SiC-MONOCRYSTAL GROWTH CRUCIBLE

Номер: US20200017990A1
Принадлежит:

Provided is an SiC-monocrystal growth crucible that includes, at the interior thereof, a monocrystal installation part and a raw-material installation part, and that serves as a crucible for obtaining an SiC monocrystal by means of sublimation, wherein the gas permeability of a first wall of the crucible, which surrounds at least a portion of a first region positioned closer to the raw-material installation part relative to the monocrystal installation part, is lower than the gas permeability of a second wall of the crucible, which surrounds at least a portion of a second region positioned on the opposite side from the raw-material installation part relative to the monocrystal installation part. 1. A crucible for growing a SiC single crystal which is a crucible for obtaining a SiC single crystal by a sublimation method ,the crucible comprising, in an interior thereof:a single crystal setting section; anda raw material setting section,wherein a gas permeability of a first wall of said crucible surrounding at least a part of a first region located on said raw material setting section side with reference to said single crystal setting section is lower than a gas permeability of a second wall of said crucible surrounding at least a part of a second region located on an opposite side of said raw material setting section with reference to said single crystal setting section.2. The crucible for growing a SiC single crystal according to claim 1 , wherein a gas permeability of said first wall is 90% or less of a gas permeability of said second wall.3. The crucible for growing a SiC single crystal according to either claim 1 , wherein a part of said first wall comprises a gas shielding member.4. The crucible for growing a SiC single crystal according to claim 3 , wherein said gas shielding member is provided inside or on an outer periphery of said first wall.5. The crucible for growing a SiC single crystal according to either claim 3 , wherein said gas shielding member is any ...

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16-01-2020 дата публикации

MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер: US20200017991A1
Автор: Ohno Akihito
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide substrate () is positioned such that a principal surface of the silicon carbide substrate () is parallel to a plurality of injection holes () of a horizontal CVD apparatus arranged in a row. Source gas is fed from the plurality of injection holes () to epitaxially grow a silicon carbide epitaxial growth layer () on the principal surface of the silicon carbide substrate (). The source gas fed from the plurality of injection holes () is divided into a plurality of system lines and controlled individually by separate mass flow controllers. A flow rate of the source gas on the principal surface of the silicon carbide substrate () is greater than 1 m/sec. 1. A manufacturing method for a silicon carbide epitaxial wafer comprising:positioning a silicon carbide substrate such that a principal surface of the silicon carbide substrate is parallel to a plurality of injection holes of a horizontal CVD apparatus arranged in a row; andan epitaxial growth step of feeding source gas and carrier gas from the plurality of injection holes to epitaxially grow a silicon carbide epitaxial growth layer on the principal surface of the silicon carbide substrate,wherein the source gas and the carrier gas fed from the plurality of injection holes is divided into a plurality of system lines and controlled individually by separate mass flow controllers,the plurality of system lines includes a first system line and a second system line,a total flow rate of the source gas fed from one of the injection holes connected to the first system line is different from a total flow rate of the source gas fed from one of the injection holes connected to the second system line,flow rates of the source gas and the carrier gas are adjusted in accordance with a number of the injection holes for each of the system lines so that the flow rates of the source gas and the carrier gas fed from the plurality of injection holes in the epitaxial growth step is uniform, anda flow rate of the source gas ...

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22-01-2015 дата публикации

Defect reduction in seeded aluminum nitride crystal growth

Номер: US20150020731A1
Принадлежит: Crystal IS Inc

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm −2 . Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

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17-01-2019 дата публикации

Methods of Forming Material Within Openings Extending into a Semiconductor Construction, and Semiconductor Constructions Having Fluorocarbon Material

Номер: US20190019720A1
Принадлежит:

Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material. 1. A method of forming material within openings extending into a semiconductor construction , comprising:directing the material into the openings as spray particles from a nozzle, one of the openings being of a different size relative to another of the openings, the difference in size being one or both of a difference in area and a difference in depth; physical characteristics of the spray particles directed into said one of the openings being different than physical properties of the spray particles directed into said other of the openings; andwherein the physical properties which are different include one or more of average spray particle size, spray particle density, lateral speed of spray particles relative to a surface of the semiconductor construction, and ionic charge imparted to the spray particles.2. The method of wherein the spray particles are drops of liquid.3. The method of wherein the spray particles are drops of liquid; with the average volume of individual drops being less than or equal to about 0.5 picoliters.4. The method of wherein the spray particles are aggregates of solid.5. The method of further comprising claim 1 , prior to directing the material into the openings claim 1 , forming an adhesion-promoting liner to be within the openings and not along regions of the semiconductor construction between the ...

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17-01-2019 дата публикации

EFFECTIVE COMPOUND SUBSTRATE FOR NON-DESTRUCTIVE EPITAXIAL LIFT-OFF

Номер: US20190019730A1
Принадлежит:

The present disclosure relates to compound substrates for use in epitaxial lift-off. In one implementation, a compound substrate may include a diced wafer layer formed of a plurality of wafer pieces and a wafer-receiving layer having a surface. The wafer layer may have a bottom surface and a top surface, and the bottom surface of the wafer layer may be attached to the surface of the wafer-receiving layer. 1. A compound substrate for use in epitaxial lift-off of a device having an expected size , comprising:a diced wafer layer formed of a plurality of wafer pieces, wherein the wafer layer has a bottom surface and a top surface; anda wafer-receiving layer having a surface, wherein the bottom surface of the wafer layer is attached to the surface of the wafer-receiving layer.2. The compound substrate of claim 1 , wherein the wafer-receiving layer comprises at least one semiconductor.3. The compound substrate of claim 2 , wherein the wafer-receiving layer comprises silicon.4. The compound substrate of claim 1 , wherein the wafer-receiving layer comprises at least one crystalline solid.5. The compound substrate of claim 4 , wherein the wafer-receiving layer comprises quartz.6. The compound substrate of claim 1 , wherein the wafer layer comprises at least one III-V semiconductor.7. The compound substrate of claim 6 , wherein the at least one III-V semiconductor comprises GaAs.8. The compound substrate of claim 1 , wherein the size of each wafer piece is smaller than the expected size of the device.9. The compound substrate of claim 1 , wherein the size of each wafer piece is larger than the expected size of the device.10. The compound substrate of claim 1 , wherein the plurality of wafer pieces are uniformly sized.11. The compound substrate of claim 1 , further comprising:an active device region,wherein the active device region is disposed on the wafer layer.12. The compound substrate of claim 11 , further comprising:one or more sacrificial layers,wherein the one or more ...

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16-01-2020 дата публикации

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS

Номер: US20200020528A1
Принадлежит: Mitsubishi Electric Corporation

A SiC substrate () has an off angle θ°. A SiC epitaxial layer () having a film thickness of Tm μm is provided on the SiC substrate (). Triangular defects () are formed on a surface of the SiC epitaxial layer (). A density of triangular defects () having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular () defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied. 1. A SiC epitaxial wafer comprising:a SiC substrate having an off angle θ°; anda SiC epitaxial layer provided on the SiC substrate and having a film thickness of Tm μm,wherein triangular defects are formed on a surface of the SiC epitaxial layer,a density of triangular defects having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A,a density of triangular defects having a length shorter than Tm/Tan θ×0.9 in the substrate off direction is denoted by B, andB/A≤0.5 is satisfied.2. The SiC epitaxial wafer according to claim 1 , wherein the density B of the triangular defects is 0.5/cmor less.3. The SiC epitaxial wafer according to claim 1 , wherein the film thickness Tm of the SiC epitaxial layer is 30 μm or more.4. The SiC epitaxial wafer according to claim 1 , wherein a density of triangular defects shorter than Tm/Tan θ×0.5 is denoted by C claim 1 , and C/A≤0.2 is satisfied.5. The SiC epitaxial wafer according to claim 1 , wherein the SiC epitaxial layer includes two or more layers.6. A method for manufacturing the SiC epitaxial wafer according to claim 1 , comprising:placing the SiC substrate on a wafer holder and accommodating the SiC substrate placed on the wafer holder in a susceptor; andsupplying a source gas to grow the SiC epitaxial layer on the SiC substrate.7. The method for manufacturing the SiC epitaxial wafer according to claim 6 , wherein a temperature of the susceptor at a portion directly above the SiC substrate is higher than a temperature of the ...

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16-01-2020 дата публикации

SEMICONDUCTOR SUBSTRATE PRODUCTION SYSTEMS AND RELATED METHODS

Номер: US20200020586A1
Автор: Seddon Michael J.

Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer. 1. A method of separating a wafer from a boule comprising a semiconductor material , the method comprising:creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end; andcooling the first end of the boule;wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.2. The method of claim 1 , wherein the damage layer is created through laser irradiation.3. The method of claim 1 , further comprising heating the second end of the boule.4. The method of claim 3 , wherein heating the second end of the boule comprises applying pulses of heat using a heating chuck.5. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.6. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.7. The method of claim 3 , further comprising placing the second side of the boule on a heating chuck and one of peeling claim 3 , prying claim 3 , and twisting the first end of the boule with a grip while applying heat to the second side of the boule.8. A method of separating a wafer from a boule of silicon carbide claim 3 , the method comprising:creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;applying a ...

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21-01-2021 дата публикации

SEMICONDUCTOR MATERIAL HAVING TUNABLE PERMITTIVITY AND TUNABLE THERMAL CONDUCTIVITY

Номер: US20210020436A1
Принадлежит:

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein. 1. A layered structure comprising:a starting material layer; anda fully depleted porous layer over the starting material layer, wherein a first band gap of the fully depleted porous layer is greater than a second band gap of the starting material and the fully depleted porous layer is elementally identical to the starting material.2. The layered structure of claim 1 , wherein the fully depleted porous layer is between 10-20 μm thick with resistivity greater than 10000 ohm-cm.3. The layered structure of claim 1 , wherein the starting material comprises silicon.4. The layered structure of claim 1 , wherein the starting material comprises a material having resistivity in a range of 0.1 to 10 ohm-cm.5. The layered structure of claim 1 , the starting material comprises a plurality of layers stacked vertically claim 1 , wherein a resistivity of the plurality of layers of the starting material varies.6. The layered structure of claim 1 , wherein the starting material layer is a silicon substrate with a <111> or <100> crystal orientation.7. The layered structure of claim 1 , wherein the fully depleted porous layer comprises a first porosity in a first region and a second porosity in a second region.8. The layered structure of claim 1 , wherein the fully depleted porous layer is lattice matched to the starting material.9. The layered structure of claim 7 , wherein the fully depleted porous layer comprises a plurality of sublayers stacked vertically claim 7 , whereina porosity ...

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16-01-2020 дата публикации

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

Номер: US20200020777A1
Принадлежит:

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density. 1. A SiC wafer , whereina difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.2. The SiC wafer according to claim 1 ,wherein the numbers of the threading dislocations of the first surface and the second surface are substantially the same.3. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein a density of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface is 1.5 threading dislocations/mmor less.'}4. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein the difference between the threading dislocation density exposed on the first surface and the threading dislocation density exposed on the second surface is 0.02 threading dislocations/mmor less.'}5. A manufacturing method of a SiC wafer claim 1 , comprising:{'sup': '2', 'a preparation step of producing a seed crystal ...

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28-01-2016 дата публикации

Confined Lateral Growth of Crystalline Germanium Material

Номер: US20160024687A1
Принадлежит: Massachusetts Institute of Technology

There is provided a substrate with a lower growth confinement layer disposed thereon. An upper growth confinement layer is disposed above and vertically separated from the lower growth confinement layer. A planar lateral growth channel is provided between the upper and lower growth confinement layers with a vertical separation between the layers along the lateral growth channel. A germanium material growth seed of amorphous silicon is disposed at a site adjacent to the lateral growth channel. The upper growth confinement layer and the lower growth confinement layer each prohibits crystalline germanium material nucleation on the upper and lower growth confinement layers during exposure to GeH 4 gas, for crystalline germanium material growth initiation in the lateral growth channel only at the growth seed site. Crystalline germanium material fills the lateral growth channel. A growth channel outlet provides formed crystalline germanium material from the lateral growth channel.

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24-01-2019 дата публикации

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

Номер: US20190024257A1
Принадлежит: SHOWA DENKO K.K.

Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. 1. A silicon carbide single crystal substrate cut from a bulk silicon carbide single crystal grown by a physical vapor transport method , wherein an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is one-half of the substrate is not more than 80% of an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is the other one-half of the substrate.2. The silicon carbide single crystal substrate according to claim 1 , wherein the substrate has a main surface having an angle θof more than 0° and not more than 12° claim 1 , the angle θbeing formed by the normal penetrating center point O of the substrate and the [0001] direction; when two semicircular regions bounded by a diameter Rof the substrate are defined claim 1 , the diameter Rbeing perpendicular to ...

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28-01-2016 дата публикации

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

Номер: US20160027879A1
Принадлежит: Sumitomo Electric Industries Ltd

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 5 cm −2 . Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

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24-01-2019 дата публикации

HIGH SPEED WAVEGUIDE INTEGRATED GE-BASED PHOTODIODE DESIGN FOR SILICON PHOTONICS

Номер: US20190027398A1
Принадлежит:

Methods of increasing the optical path length and bandwidth of a Ge-based photodiode while reducing the diode area and capacitance without compromising the optical responsivity and the resulting devices are provided. Embodiments include providing a Si substrate having a BOX layer over the Si substrate and a Si layer over the BOX layer; forming an oxide layer over the Si layer; forming a trench in the oxide layer, the trench having a center strip and a plurality of opposing fins; epitaxially growing Ge in the trench and above the oxide layer; and removing the oxide layer, a Ge center strip and a plurality of opposing fins remaining. 1. A method comprising:providing a silicon (Si) substrate having a buried oxide (BOX) layer over the Si substrate and a Si layer over the BOX layer;forming an oxide layer over the Si layer;forming a trench in the oxide layer, the trench having a center strip and a plurality of opposing fins;epitaxially growing germanium (Ge) in the trench and above the oxide layer; andremoving the oxide layer, a Ge center strip and a plurality of opposing fins remaining,wherein, in top view, the Ge center strip extends between the plurality of opposing fins in perpendicular direction.2. The method according to claim 1 , further comprising:forming an interlayer dielectric (ILD) over the Si layer and between the Ge fins;{'sub': '2', 'forming a silicon dioxide (SiO) layer over the ILD; and'}{'sub': '2', 'planarizing the SiOlayer down to the Ge.'}3. The method according to claim 1 , further comprising:forming the trench through the oxide layer and a portion of the Si layer.4. The method according to claim 1 , comprising forming the Si layer to a thickness of 200 nanometer (nm) to 240 nm.5. The method according to claim 1 , comprising forming the oxide layer to a thickness of 0.07 micrometer (μm) to 0.09 μm.6. The method according to claim 1 , comprising forming the oxide layer of deposited and grown oxides or nitride films.7. The method according to claim 1 , ...

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24-04-2014 дата публикации

Unseeded silicon carbide single crystals

Номер: US20140113136A1
Автор: Charles Eric Hunter
Принадлежит: Individual

High volumes of relatively large, single crystals of silicon carbide are grown in a reactor from a point source, i.e., unseeded growth. The crystals may be grown colorless or near colorless and may be processed for many uses, including use as a diamond substitute for jewelry, as an optical element such as a watch face or a lens, or for other desired end uses.

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28-01-2021 дата публикации

GERMANIUM MEDIATED DE-OXIDATION OF SILICON

Номер: US20210028015A1
Принадлежит: PsiQuantum Corp.

A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen. 1. A method for processing a substrate , the method comprising:positioning the substrate in a deposition chamber, wherein the substrate comprises a wafer of single crystal silicon covered with a layer of amorphous silicon oxide;depositing a layer of germanium on the layer of amorphous silicon oxide; andheating the substrate to a temperature below 850° C. causing at least a portion of the layer of amorphous silicon oxide to react with the layer of germanium to form germanium oxide.2. The method of further comprising repeating the depositing the layer of germanium and the heating the substrate until the layer of amorphous silicon oxide is removed from the wafer of single crystal silicon.3. The method of wherein after the amorphous silicon oxide is removed from the wafer of single crystal silicon claim 2 , residual germanium from the depositing the layer of germanium is distributed on the wafer of single crystal silicon.4. The method of further comprising depositing an epitaxial layer of strontium titanate on the wafer of single crystal silicon and on the residual germanium.5. The method of further comprising exposing the wafer of single crystal silicon to oxygen after the depositing the epitaxial layer of strontium titanate claim 4 , causing the silicon and the residual germanium to react forming a silicon germanium oxide layer between the layer of strontium titanate and the wafer of single ...

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04-02-2016 дата публикации

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY

Номер: US20160032486A1
Принадлежит:

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate. 1. A method for manufacturing SiC crystal to a grown volume , comprising:i. introducing a mixture comprising silicon chips into a reaction cell, the reaction cell being made of graphite and having cylindrical interior of internal volume in the range of from six to twelve times the grown volume of the SiC crystal;ii. placing a silicon carbide seed crystal inside the reaction cell adjacent to a lid of the reaction cell;iii. sealing the cylindrical reaction cell using the lid;iv. surrounding the reaction cell with graphite insulation;v. introducing the cylindrical reaction cell into a vacuum furnace;vi. evacuating the vacuum furnace;vii. filling the vacuum furnace with a gas mixture comprising inert gas to a pressure near atmospheric pressure;viii. heating the cylindrical reaction cell in the vacuum furnace to a temperature in the range from 1975° C. to 2500° C.;ix. reducing the pressure in the vacuum furnace to from 0.05 torr to less than 50 torr;{'sup': 2', '2, 'x. introducing source of carbon gas into the vacuum furnace and flowing nitrogen gas configured to introduce nitrogen donor concentration larger than 3E18/cm, and up to 6E18/cm; and,'}xi. allowing for sublimation of silicon and carbon species ...

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04-02-2016 дата публикации

METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20160032487A1
Принадлежит:

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}the bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal,in the step of placing the source material powder and the seed crystal within the crucible, the source material ...

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17-02-2022 дата публикации

MANUFACTURING METHOD OF SILICON CARBIDE INGOT

Номер: US20220049372A1
Автор: Lin Ching-Shan
Принадлежит: GlobalWafers Co., Ltd.

A manufacturing method of a silicon carbide ingot includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A first surface of the seed faces the raw material. The reactor and the raw material are heated, where part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material. The growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. A diameter of the silicon carbide ingot is greater than a diameter of the seed. 1. A manufacturing method of a silicon carbide ingot , comprising:providing a raw material containing carbon and silicon and a seed located above the raw material in a reactor, wherein a first surface of the seed faces the raw material;heating the reactor and the raw material, wherein part of the raw material is vaporized and transferred to the first surface of the seed and a sidewall of the seed and forms a silicon carbide material on the seed, to form a growing body containing the seed and the silicon carbide material, wherein the growing body grows along a radial direction of the seed, and the growing body grows along a direction perpendicular to the first surface of the seed; andcooling the reactor and the raw material to obtain the growing body that has completed growth, wherein the growing body that has completed growth is a silicon carbide ingot, and a diameter of the silicon carbide ingot is greater than a diameter of the seed.2. The manufacturing method as described in claim 1 , wherein the diameter of the seed is D1 claim 1 , the diameter of the silicon carbide ingot is D2 claim 1 , and D1:D2 is 1:8 to 7.5:83. The manufacturing ...

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17-02-2022 дата публикации

SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE

Номер: US20220049373A1
Принадлежит:

An apparatus for sublimation growth of a doped SiC single crystal includes a growth crucible, an envelope, a heater, and a passage for introducing into the envelope from a source outside the envelope a doping gas mixture. The gas mixture includes a gaseous dopant precursor that, in response to entering a space between the growth crucible and the envelope, undergoes chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products of transformation which penetrate the wall of the crucible, move into the crucible, and absorb on a growth interface of a growing SiC crystal thereby causing doping of the growing crystal. A sublimation growth method is also described. 1. A method of growing a doped silicon carbide (SiC) single crystal by sublimation , comprising:providing SiC source material and a SiC single crystal seed in spaced relation within a growth crucible;holding the growth crucible in an envelope, and providing passages for a gas between an exterior surface of the growth crucible and an interior surface of the envelope;heating the SiC source material to form sublimated material, establishing a temperature gradient between the SiC source material and the SiC single crystal seed, and causing the sublimated material to be transported to and precipitate on the SiC single crystal seed; andusing the passages to introduce into the envelope, from a source outside the envelope, a doping gas mixture including a gaseous dopant precursor, and heating the gaseous dopant precursor, within the passages, to a temperature between 2000° C. and 2400° C., such that the gaseous dopant precursor undergoes a chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products which penetrate the crucible wall, move into the crucible, and absorb on a growth interface of a growing SiC crystal.2. The method of claim 1 , further comprising holding the envelope in a ...

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17-02-2022 дата публикации

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

Номер: US20220049374A1
Автор: Lin Ching-Shan
Принадлежит: GlobalWafers Co., Ltd.

A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm. 1. A silicon carbide wafer , wherein within a range area of 5 mm from an edge of the silicon carbide wafer , there are no low angle grain boundaries formed by clustering of basal plane dislocation defects , and the silicon carbide wafer has a bowing of less than 15 μm.2. The silicon carbide wafer as claimed in claim 1 , wherein the silicon carbide wafer has a warping of less than 30 μm.3. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 10 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 7% of the range area.4. The silicon carbide wafer as claimed in claim 3 , wherein within the range area of 10 mm from the edge of the silicon carbide wafer claim 3 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.5. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 15 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 10% of the range area.6. The silicon carbide wafer as claimed in claim 5 , wherein within the range area of 15 mm from the edge of the silicon carbide wafer claim 5 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.7. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 20 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 30% of the range area.8. The silicon ...

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31-01-2019 дата публикации

LUMINESCENT HYPERBOLIC METASURFACES

Номер: US20190031955A1

Techniques, systems, and devices are disclosed for implementing light-emitting hyperbolic metasurfaces. In one exemplary aspect, a light-emitting device includes a surface; a plurality of quantum heterostructures positioned on the surface, each of the plurality of quantum heterostructures including multiple quantum wells distributed along an axis perpendicular to the surface and separated by multiple quantum barriers, wherein each two adjacent quantum heterostructures of the plurality quantum heterostructures form a gap; and a monocrystalline material at least partially filling gaps between the plurality quantum heterostructures. 1. A semiconductor device , comprising:a substrate; and a plurality of quantum heterostructures, each of the plurality of quantum heterostructures including multiple quantum wells that are separated by multiple quantum barriers, wherein each of the plurality of quantum heterostructures is separated from another quantum heterostructure by a gap; and', 'a monocrystalline material at least partially filling the gap between each of the plurality quantum heterostructures., 'luminescent hyperbolic metasurfaces (LuHMS) including2. The device of claim 1 , wherein the substrate includes indium phosphide.3. The device of claim 1 , wherein the multiple quantum barriers include indium gallium arsenide phosphide.4. The device of claim 1 , wherein the multiple quantum wells include indium gallium arsenide phosphide.5. The device of claim 1 , wherein the monocrystalline material includes silver.6. The device of claim 1 , wherein each of the plurality of quantum heterostructures has a shape of a pillar.7. The device of claim 1 , wherein each of the plurality of quantum heterostructures has a height between 100 to 300 nm and a width between 40 to 80 nm.8. The device of claim 1 , wherein the gap has a width between 10 to 40 nm.9. The device of claim 1 , wherein the plurality of quantum heterostructures and the monocrystalline material form a periodic ...

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30-01-2020 дата публикации

CRYSTAL GROWTH APPARATUS

Номер: US20200032414A1
Автор: Muto Daisuke
Принадлежит: SHOWA DENKO K.K.

A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material. 1. A crystal growth apparatus , comprisinga crucible,a heat-insulating material which covers a circumference of the crucible, anda heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, whereinthe heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening of the heat-insulating material.2. The crystal growth apparatus according to claim 1 , wherein the movable part is configured to move symmetrically with the crucible as a center claim 1 , when the apparatus is observed in planar view from a vertical direction of a supporting surface by which the crucible is supported.3. The crystal growth apparatus according claim 1 , wherein the movable part is located below the crucible.4. The crystal growth apparatus according to claim 1 , whereinthe movable part has a first inclined surface which is inclined relative to an operating direction of the movable part, andthe opening ratio is controlled by a distance between the first inclined surface and a second inclined surface which faces the movable part of the heat-insulating material.5. The crystal growth apparatus according to claim 1 , wherein the movable part has an annular shape in plain view.6. The crystal growth apparatus according to claim 1 , whereinthe movable part is configured to move ...

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04-02-2021 дата публикации

METHOD FOR PRODUCING BULK SILICON CARBIDE

Номер: US20210032770A1
Принадлежит:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide , comprising: a crucible having an upper region, a lower region, and one or more vent holes,', 'a crucible cover sealing the crucible,', 'a substantially solid silicon carbide precursor contained within a source module that is positioned in the lower region of the crucible, wherein the source module is removable from the crucible,', 'a stand-alone seed module, removable from the crucible, that, when suspended in the upper region of the crucible, forms a space between the crucible cover and an entire top surface of an upper section of a seed holder of the seed module, the seed module having a plurality of vapor release openings and a silicon carbide seed disposed within the seed holder, wherein the plurality of vapor release openings are formed in the seed holder below a bottom surface of the silicon carbide seed as a plurality of holes around a center axis that is perpendicular to the bottom surface of the silicon carbide seed, and', 'a vapor release ring having one or more holes, wherein at least one of the one or more holes of the vapor release ring is aligned with at least one of the one or more vent holes of the crucible;, 'providing a sublimation furnace comprising a furnace shell, at least one heating element positioned ...

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17-02-2022 дата публикации

CRYSTALLINE TRANSITION METAL DICHALCOGENIDE FILMS AND METHODS OF MAKING SAME

Номер: US20220051894A1
Принадлежит: University of Dayton

Methods of making molybdenum sulfide (MoS) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoSonto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoSare disclosed. 1. A method for making a transition metal dichalcogenide film , the method comprising:providing a precursor film comprising an amorphous transition metal dichalcogenide film deposited on a substrate by a physical vapor deposition process at a temperature in a range from 20° C. to 250° C.;illumination-based annealing the precursor film, thereby changing the amorphous transition metal dichalcogenide film to a crystalline transition metal dichalcogenide film.2. The method of claim 1 , wherein the substrate is a flexible substrate material.3. The method of claim 2 , wherein the flexible substrate material comprises polydimethyl siloxane (PDMS) claim 2 , 2-methacryloyloxyethyl phosphorylcholine (MPC) claim 2 , or one or both copolymerized with dodecyl methacrylate (DMA).4. The method of claim 1 , wherein the physical vapor deposition is magnetron sputtering claim 1 , pulsed laser deposition claim 1 , thermal evaporation claim 1 , or electron beam evaporation.5. The method of claim 1 , wherein the amorphous transition metal dichalcogenide film has a thickness less than 10 nm.6. The method of claim 1 , wherein the transition metal dichalcogenide film comprises one or more of the group of molybdenum sulfide and tungsten sulfide.7. The method of claim 1 , wherein the illumination-based annealing comprises exposing the amorphous transition metal dichalcogenide film to laser radiation having an intensity of 0.5 mW/μmto 20 mW/μmfor 0.1 to 100 seconds.8. The method of claim 7 , wherein ...

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31-01-2019 дата публикации

SEMICONDUCTOR SUBSTRATE MADE OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SAME

Номер: US20190035894A1
Автор: SUGIYAMA Naohiro
Принадлежит: Denso Corporation

In a semiconductor substrate having a silicon carbide substrate and an epitaxial film, a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5, preferably in a range between 0.5 and 2. Thus, hydrogen diffusion at a boundary position between the epitaxial film and the SiC substrate is restricted. Further, it is possible to prepare the semiconductor substrate for restricting the reduction of the hydrogen concentration. Thus, it is possible to improve the properties of the SiC semiconductor device using the semiconductor substrate, for example, the bipolar device such as a PN diode. 1. A semiconductor substrate comprising:a silicon carbide substrate made of silicon carbide single crystal and including hydrogen; andan epitaxial film arranged on the silicon carbide substrate and including hydrogen, wherein:a concentration ratio between a hydrogen concentration in the silicon carbide substrate and a hydrogen concentration in the epitaxial film is in a range between 0.2 and 5.2. The semiconductor substrate according to claim 1 , wherein:the concentration ratio between the hydrogen concentration in the silicon carbide substrate and the hydrogen concentration in the epitaxial film is in a range between 0.5 and 2.3. The semiconductor substrate according to claim 1 , wherein:{'sup': 18', '−3', '19', '−3, 'the hydrogen concentration in the silicon carbide substrate is in a range between 2×10cmand 5×10cm.'}4. A manufacturing method of a semiconductor substrate comprising:forming a silicon carbide substrate made of silicon carbide single crystal by forming the silicon carbide single crystal including hydrogen using a gaseous growth method for synthesizing silicon carbide from silicon including gas and carbon including gas with hydrogen gas as a carrier gas; andforming an epitaxial film including hydrogen on the silicon carbide substrate using the hydrogen gas as a ...

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11-02-2016 дата публикации

METHOD FOR PRODUCING SINGLE CRYSTAL

Номер: US20160040317A1
Принадлежит:

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible; and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part. In the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space therebetween are heated by induction heating to sublime the source material powder to cause recrystallization on the seed crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}in the step of placing the source material powder and the seed crystal within the crucible, the source material powder is placed so as to be in contact with an inner surface of the bottom part and the seed crystal is placed so as to be held by the holder, andin the step of growing the single crystal on the seed crystal, the crucible is disposed on a spacer so as to form a space starting directly below an outer surface of the bottom part, and the peripheral wall part and an auxiliary heating member that is placed so as to face the outer surface of the bottom part with the space ...

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09-02-2017 дата публикации

Laser Assisted SiC Growth On Silicon

Номер: US20170040167A1

A method for forming a compound on a substrate is provided. The method includes depositing a composition onto a surface of a substrate; illuminating the composition and the substrate with pulsed energy; melting the substrate and decomposing the composition simultaneously; and forming a compound on the substrate. A first component of the compound is derived from the substrate and a second component of the compound is derived from the composition. 1. A method for forming a compound on a substrate , the method comprising:depositing a composition onto a surface of a substrate;illuminating the composition and the substrate with pulsed energy;melting the substrate and decomposing the composition simultaneously; andforming a compound on the substrate,wherein a first component of the compound is derived from the substrate and a second component of the compound is derived from the composition.2. The method according to claim 1 , wherein the illuminating the composition and the substrate comprises illuminating the composition and the substrate with pulsed energy emitted from an excimer laser claim 1 , plasma arc melting claim 1 , or a pulsed energy beam.3. The method according to claim 2 , wherein the pulsed energy is emitted form an excimer laser comprising Ar claim 2 , Kr claim 2 , F claim 2 , Xe claim 2 , ArF claim 2 , KrF claim 2 , XeBr claim 2 , XeF claim 2 , or KrCl.4. The method according to claim 2 , wherein the pulsed energy is emitted from a pulsed linear particle accelerator (linac) selected from the group consisting of pulsed linac ion accelerators claim 2 , pulsed linac proton accelerators claim 2 , and pulsed linac electron accelerators5. The method according to claim 1 , wherein the depositing a composition onto a surface of a substrate comprising depositing a composition comprising a carbon-based polymer on the surface of a Si substrate.6. The method according to claim 5 , wherein Si is the first component and C is the second component claim 5 , and the ...

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09-02-2017 дата публикации

Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth

Номер: US20170040168A1
Принадлежит: IMEC

Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench. 1. A mask structure comprising:a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, anda second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.2. The mask structure of claim 1 , wherein the first trench has a height that is at least three times a width of the first trench.3. The mask structure of claim 1 , wherein the non-zero angle is substantially 90°.4. The mask structure of claim 1 , wherein the second level defines a first array of second trenches and a second array of second trenches claim 1 , and wherein the first array of second trenches is discontinuous from the second array of second trenches and is separated by the first trench.5. The mask of claim 1 , wherein each second trench of the first array of second trenches and the second array of second trenches comprises an edge that is adjacent to the first trench claim 1 , and wherein each respective edge is separated from the first trench by a non-zero spacing.6. The mask structure of claim 1 , wherein the plurality of second trenches extend continuously across the first trench.7. The mask structure of claim 1 , wherein the second level further defines two barriers positioned on opposing sides of the first opening claim 1 , wherein an end of each second trench of the plurality of second trenches is further defined by a ...

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