11-06-2014 дата публикации
Номер: CN103848392A
Принадлежит:
The invention provides a method for quickly manufacturing large-area black silicon by using a laser interference technology. By using a specific multi-beam interference combination, lattice period light field distribution is formed; under a sulfur-containing compound atmosphere, a large-area black silicon surface structure is quickly formed on the surface of a silicon material by using large interference light field distribution, controlling the two-dimensional plane displacement of a silicon material sample and combining with a laser etching threshold value of the silicon material. By controlling an interference light field, the black silicon surface structure with a variable structure period can be obtained. Meanwhile, according to the method, the defects of a conventional femtosecond laser scanning method that the large-area black silicon surface structure is difficult to quickly obtain and the structure period is uncontrollable are overcome. In addition, the method has the advantages ...
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