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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 4. Отображено 4.
25-06-2014 дата публикации

Water-soluble silicon cutting fluid and its application thereof

Номер: CN103881798A
Принадлежит:

The invention discloses a water-soluble silicon cutting fluid and an application, which comprises the following ingredients by weight percentage: 5-35% of fatty alcohol polyoxyethylene ether, 0.5-5% of chelating agent, 1-6% of solubilizer, 0.5-5% of ether alcohols activator, 0.003-0.1% of bactericide and the balance of water. The water-soluble silicon cutting fluid has extremely good anti-extreme pressure lubrication performance, large density and extremely good levelability and dispersibility, so that SiC is uniformly dispersed in the cutting fluid, the problems of cutting and re-deposition of the granule powder can be effectively solved; stable viscosity can be maintained in the cutting process, and the water-soluble silicon cutting fluid has good wetability and can increase the work efficiency.

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25-06-2014 дата публикации

Semiconductor industrial cleaning agent and application thereof

Номер: CN103881837A
Принадлежит:

The invention discloses a semiconductor industrial cleaning agent and an application thereof, and the semiconductor industrial cleaning agent is characterized by comprising 0.5-9.5% of acid agent, 5-35% of surfactant, 0.1-2.0% of antistatic agent, 1-6% of solubiliser, 1-4% of corrosion inhibitor, 0.1-2.0% of bactericide and the balance of deionized water. The water-based cleaning agent used for polycrystalline silicon chips is colorless transparent or semitransparent liquid; The semiconductor industrial cleaning agent has extremely high surface activity characteristic enables extremely low surface tension, its unique netted chemical structure provides high linearity and high suspensibility, invasion of microbe can be effectively defensed, no corruption and no deterioration are ensured during an usage process, no smelliness is generated, the cost is saved for user, the waste liquid discharge is reduced, the semiconductor industrial cleaning agent is in favor of environmental protection, ...

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25-06-2014 дата публикации

Metal compound-type arsenic removal agent, preparation method and application thereof

Номер: CN103877931A
Принадлежит:

The invention discloses a metal compound-type arsenic removal agent, a preparation method and an application thereof, the metal compound-type arsenic removal agent is composed of a carrier and a metal active ingredient loaded on the carrier; the carrier is active carbon, and the metal active ingredient is more than one selected from copper, iron, nickel or silver. The arsenic removal agent has the advantages of simple production technology, large specific surface area, and good active metal dispersibility, deep arsenic removal of the oil product can be realized, surface acidity is low, the colloid generation is reduced, so that the arsenic removal agent is benefit for prolonging the regeneration period of a catalyst, the arsenic removal agent has the advantages of high arsenic removal rate and low energy consumption, and is suitable for large-scale industrial production, and can be used for removing arsenic from the light dydrocarbon materials such as propylene, ethene and deeply purifying ...

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25-06-2014 дата публикации

Normal-temperature dechlorination agent and preparation method thereof

Номер: CN103877939A
Принадлежит:

The invention provides a normal-temperature dechlorination agent and a preparation method thereof. The normal-temperature dechlorination agent comprises a carrier, an active component MOF material supported by the carrier, and an adhesive agent calcium hydroxide; the MOF material is prepared by dissolving an organic ligand and metal ions in a solvent through a hydrothermal reaction method; the organic ligand is selected from substituted or unsubstituted aromatic polycarboxylic acids containing one or more rings, and from substituted or unsubstituted aromatic polycarboxylic acids containing at least a hetero atom and containing one or more rings; and the metal ligand is most preferably selected from nitrates or chlorides. The normal-temperature dechlorination agent has relatively large specific surface area, simple in synthetic technology, superior in performances and wide in application scope.

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