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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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12-01-2012 дата публикации

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20120007109A1
Автор: Kim Chang Youn, Kim Hwa Mok, KIM Jong Kyu, LEE Jang Woo, Lee Joon Hee, Seo Won Cheol, SHIN Jin Cheul, Yoon Yeo Jin, YOU Jong Kyun
Принадлежит: Seoul Opto Device Co., Ltd.

Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. 1. A light-emitting device , comprising:a substrate;a plurality of light-emitting regions arranged on the substrate, wherein the light-emitting device is divided into the plurality of light-emitting regions by a connection metal,wherein the light-emitting regions are connected in parallel by the connection metal.2. The light-emitting device of claim 1 , wherein the connection metal comprises a first-type connection metal and a second-type connection metal claim 1 , the first-type connection metal and the second-type connection metal being stacked vertically between the light-emitting regions and the substrate.3. The light-emitting device of claim 2 , further comprising a first insulation layer arranged between the first-type connection metal and the second-type connection metal.4. The light-emitting device of claim 3 , further comprising a second insulation layer arranged between a side surface of a light-emitting region of the plurality of light-emitting regions and the connection metal.5. The light-emitting device of claim 2 , wherein each light-emitting region comprises a first-type semiconductor layer claim 2 , an active layer arranged on a first portion of the first-type semiconductor layer claim 2 , and a second-type semiconductor layer arranged on the active layer.6. The light-emitting device of claim 5 , wherein the area of the first-type connection metal is greater than the area of the active layer.7. The light-emitting device of ...

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Номер записи: 1
09-02-2012 дата публикации

Pre-Crash Side Air Bag Device

Номер: US20120032425A1
Автор: Choi Hyeong Ho, CHOI Jae Ho, Choi Jun Yeol, Kwon Hyock In, LEE Seung Woo
Принадлежит: HYUNDAI MOTOR COMPANY

A pre-crash side airbag device includes a side collision detection sensor, a pre-crash sensor, a main airbag, an auxiliary airbag, and a control unit. The side collision detection sensor detects a collision occurring at the side of a vehicle. The pre-crash sensor detects physical quantities related to the speed of an approaching object. The main airbag is deployed when a control signal is input. The auxiliary airbag is coupled to one side of the main airbag. The control unit controls the deployment of the main airbag and the auxiliary airbag depending on a pre-crash case where a high-speed side collision is expected and a normal case where a low-speed side collision is expected or the measurement value is erroneous. 1. A pre-crash side airbag device , comprising:a side collision detection sensor configured to detect a collision occurring at a side of a vehicle;a pre-crash sensor disposed on the side of the vehicle, and configured to detect physical quantities related to a speed of an approaching object;a main airbag disposed between a vehicle occupant seat and the side of the vehicle, and deployed when a control signal is received;an auxiliary airbag coupled to one side of the main airbag so that the auxiliary airbag can be communicated with the main airbag; anda control unit configured to allow both the main airbag and the auxiliary airbag to be deployed even before a measurement value of the side collision detection sensor is received in a pre-crash case where a measurement value from the pre-crash sensor is received and a high-speed side collision is expected, and configured to allow the main airbag to be deployed after the measurement value of the side collision detection sensor is received in a normal case where the measurement value from the pre-crash sensor is received and a low-speed side collision is expected or the measurement value is erroneous.2. The pre-crash side airbag device as set forth in claim 1 , wherein the main airbag comprises:an open vent ...

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Номер записи: 2
17-05-2012 дата публикации

ROOF AIRBAG APPARATUS FOR VEHICLE

Номер: US20120119473A1
Автор: Choi Hyeong Ho, JO Sang Min, LEE Chang Hyun, Lee Un Koo
Принадлежит: HYUNDAI MOTOR COMPANY

A roof airbag apparatus for a vehicle, may include an inflator providing gas pressure, an air tube deploying towards sides of a passenger sitting on a seat when gas may be supplied from the inflator into the air tube, and a front support panel provided on a front end of the air tube to enclose a front portion of the passenger when the air tube may be deployed. 1. A roof airbag apparatus for a vehicle , comprising:an inflator providing gas pressure;an air tube deploying towards sides of a passenger sitting on a seat when gas is supplied from the inflator into the air tube; anda front support panel provided on a front end of the air tube to enclose a front portion of the passenger when the air tube is deployed.2. The roof airbag apparatus as set forth in claim 1 , wherein the air tube includes:a support tube fastened to a roof panel of the vehicle, the support tube being fluid-connected at a first end thereof to the inflator;a first bent tube fluid-connected to a second end of the support tube and bent in a predetermined direction such that the first bent tube is deployed to protect a first side of the passenger;a second bent tube branching off the support tube at a position adjacent to the first end of the support tube and bending in a predetermined direction such that the second bent tube is deployed to protect a second side of the passenger; anda connection tube fluid-connecting front ends of the first and second bent tubes to each other,wherein the first and second bent tubes are spaced apart each other by the connecting tube with a predetermined distance to receive the passenger when the air tube is deployed.3. The roof airbag apparatus as set forth in claim 2 , wherein the front support panel is connected to the roof panel of the vehicle by a tether.4. The roof airbag apparatus as set forth in claim 3 , wherein the tether is in a folded and sewed state while the air tube is not deployed.5. The roof airbag apparatus as set forth in claim 2 , wherein the air tube ...

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Номер записи: 3
17-05-2012 дата публикации

CENTER AIRBAG MODULE FOR VEHICLE

Номер: US20120119475A1
Автор: Choi Hyeong Ho, CHOI Jae Ho
Принадлежит: HYUNDAI MOTOR COMPANY

A center airbag module for a vehicle, may include a center console provided between a pair of seats, and an airbag cushion provided in the center console to be deployed in the event of a side collision, and having a lower chamber configured to support a body of a passenger, and an upper chamber including a left chamber and a right chamber which fluid-branch from an upper end of the lower chamber and configured to protect a head of the passenger. 1. A center airbag module for a vehicle , comprising:a center console provided between a pair of seats; and a lower chamber configured to support a body of a passenger; and', 'an upper chamber including a left chamber and a right chamber which fluid-branch from an upper end of the lower chamber and configured to protect a head of the passenger., 'an airbag cushion provided in the center console to be deployed in the event of a side collision, and including2. The center airbag module as set forth in claim 1 , wherein each of the left and right chambers is deployed while being spaced apart from a corresponding seat by a predetermined distance.3. The center airbag module as set forth in claim 1 , wherein a predetermined space is formed between the left and right chambers to absorb a shock.4. The center airbag module as set forth in claim 1 , wherein a width of the lower chamber is smaller than a width of the upper chamber.5. The center airbag module as set forth in claim 4 , wherein facing inner surfaces of the lower chamber are partially connected to each other by a tether or by sewing to form a fluid communication to the upper chamber.6. The center airbag module as set forth in claim 1 , wherein upper ends of the left and right chambers are connected to each other by sewing along a first seam or by a tether.7. The center airbag module as set forth in claim 1 , wherein the upper and lower chambers are separated from each other by a second seam or a tether.8. A center airbag module for a vehicle claim 1 , comprising:a center ...

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Номер записи: 4
17-05-2012 дата публикации

Passenger-shift airbag apparatus, side airbag system having the same, and method of controlling side airbag system

Номер: US20120123645A1
Автор: Hyeong Ho Choi, Hyock In Kwon, Jae Ho Choi, Seung Woo Lee
Принадлежит: Hyundai Motor Co

A passenger-shift airbag apparatus may include an inflator installed at a predetermined position in a seat back of a vehicle; and a passenger-shift airbag cushion fluid-connected to the inflator directly or by a gas supply tube, the passenger-shift airbag cushion being located in the seat back adjacent to a lateral side of the seatback, so that when the passenger-shift airbag cushion is inflated by gas supplied from the inflator, the passenger-shift airbag cushion shifts the passenger towards an inside of the vehicle.

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Номер записи: 5
31-05-2012 дата публикации

INTERNAL AIRBAG DEVICE

Номер: US20120133114A1
Автор: Choi Hyeong Ho, Choi Jun Yeol
Принадлежит: HYUNDAI MOTOR COMPANY

An internal airbag device may include an inflator, an airbag housing mounted in a roof in a region between a front seat and a rear seat, and an airbag received in the airbag housing to deploy downwards by gas supplied from the inflator, wherein the airbag includes a horizontal airbag section supported by the roof during the gas may be supplied therein in a deployment thereof, and a vertical airbag section fluid-connected to the horizontal airbag section and extending downwards from an end of the horizontal airbag section opposite the rear seat in a deployment thereof. 1. An internal airbag device comprising:an inflator;an airbag housing mounted in a roof in a region between a front seat and a rear seat; andan airbag received in the airbag housing to deploy downwards by gas supplied from the inflator, a horizontal airbag section supported by the roof during the gas is supplied therein in a deployment thereof; and', 'a vertical airbag section fluid-connected to the horizontal airbag section and extending downwards from an end of the horizontal airbag section opposite the rear seat in a deployment thereof., 'wherein the airbag includes2. The internal airbag device according to claim 1 , wherein the vertical airbag section is a substantially planar airbag member involving spacing between a driver's seat and a front passenger seat.3. The internal airbag device according to claim 1 , wherein the vertical airbag section and the roof are connected by at least a tether in order to reinforce the strength of the deploying airbag.4. The internal airbag device according to claim 1 , wherein at least a tether is connected between the horizontal airbag section and the vertical airbag section.5. The internal airbag device according to claim 1 , wherein at least a vent hole is provided at a boundary region formed between the horizontal airbag section and the vertical airbag section.6. The internal airbag device according to claim 1 ,wherein the vertical airbag section has a ...

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Номер записи: 6
31-05-2012 дата публикации

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Номер: US20120135551A1
Автор: Kim Chang Youn, Seo Won Cheol, Yoon Yeo Jin
Принадлежит: Seoul Opto Device Co., Ltd.

Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate. 1. A method of fabricating a light emitting diode , the method comprising:forming semiconductor layers on a first substrate, the semiconductor layers comprising a buffer layer, a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;forming a metal pattern on the second conductive type semiconductor layer;forming a bonding metal layer on a second substrate;bonding the metal pattern and the bonding metal layer;separating the first substrate from the semiconductor layers;patterning the semiconductor layers, the metal pattern, and the bonding metal layer to form separate metal patterns and light emitting cells arranged on at least one region of the respective separated metal patterns; anddicing the second substrate to form individual light emitting diode chips,wherein the second substrate is homogeneous with the first substrate.2. The method of claim 1 , wherein the first substrate and the second substrate comprise sapphire.3. The method of claim 1 , wherein forming the metal pattern comprises:forming a plurality of reflective metal layers separated from each other on the second conductive type semiconductor layer; andforming an intermediate metal layer covering the second conductive type semiconductor layer and the reflective metal layers.4. The method of claim 1 , further comprising:forming a plurality of grooves or through-holes in an upper portion or a lower portion of the ...

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Номер записи: 7
04-10-2012 дата публикации

WAFER LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20120248481A1
Автор: Seo Won Cheol
Принадлежит: Seoul Opto Device Co., Ltd.

An exemplary embodiment of the present invention discloses a wafer level light emitting diode package that includes a first substrate having an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate, and a conductive via, a terminal on which the first substrate is arranged, a second substrate arranged on the first substrate, the second substrate including a cavity-forming opening, the cavity-forming opening exposing the electrode pattern, and a light-emitting chip arranged on the electrode pattern. The light-emitting chip is a flip-bonded light-emitting structure without a chip substrate, and the conductive via electrically connects the electrode pattern and the terminal. 1. A wafer level light emitting diode package , comprising: an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate; and', 'a conductive via;, 'a first substrate comprisinga terminal on which the first substrate is arranged;a second substrate arranged on the first substrate, the second substrate comprising a cavity-forming opening, the cavity-forming opening exposing the electrode pattern; anda light-emitting chip arranged on the electrode pattern,wherein the light-emitting chip is a flip-chip bonded light-emitting structure without a chip substrate, andwherein the conductive via electrically connects the electrode pattern and the terminal.2. The wafer level light emitting diode package of claim 1 , further comprising a wavelength-converting structure claim 1 , wherein the wavelength-converting structure comprises a fluorescent layer disposed on a surface of the light-emitting structure claim 1 , a fluorescent film disposed on a surface of the second substrate and the surface of the light-emitting structure claim 1 , or a resin fluorescent material arranged in the cavity-forming opening.3. The wafer level light emitting diode package of claim 1 , wherein the terminal comprises an electrode pad claim 1 , the ...

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Номер записи: 8
04-10-2012 дата публикации

SIDE AIRBAG FOR VEHICLES

Номер: US20120248745A1
Автор: Choi Hyeong Ho, Kwon Hyock In
Принадлежит:

A side airbag for a vehicle may include an inflator provided on a seat side frame in a seat of the vehicle, a first cushion part installed in a seat side pad mounted on the seat side frame, wherein the first cushion part covers the seat side frame and may be fluid-connected to the inflator so that when the inflator may be operated, the first cushion part inflates inside the seat side pad to push an occupant sideways, and a second cushion part integrally connected to the first cushion part so that when gas may be supplied from the inflator into the second cushion part via the first cushion part, the second cushion part protrudes out of the seat side pad to protect a side portion of a body of the occupant. 1. A side airbag for a vehicle , comprising:an inflator provided on a seat side frame in a seat of the vehicle;a first cushion part installed in a seat side pad mounted on the seat side frame, wherein the first cushion part covers the seat side frame and is fluid-connected to the inflator so that when the inflator is operated, the first cushion part inflates inside the seat side pad to push an occupant sideways; anda second cushion part integrally connected to the first cushion part so that when gas is supplied from the inflator into the second cushion part via the first cushion part, the second cushion part protrudes out of the seat side pad to protect a side portion of a body of the occupant.2. The side airbag as set forth in claim 1 , further comprising:a tether having a first end connected to the first cushion part and a second end connected to the seat side frame to support the first cushion part so that the first cushion part maintains covering state of the seat side frame while the first cushion part inflates.3. The side airbag as set forth in claim 2 , whereinthe inflator is mounted to an outer side surface of the seat side frame;the first cushion part is connected to the inflator to cover the seat side frame along the outer side surface of the seat side ...

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Номер записи: 9
06-12-2012 дата публикации

AIR BELT APPARATUS FOR VEHICLE

Номер: US20120306185A1
Автор: Choi Hyeong Ho, Kang Chang Ky, KIM Il Hwan
Принадлежит: HYUNDAI MOTOR COMPANY

An air belt apparatus for a vehicle may include a seat belt passing through a belt hook mounted to a vehicle body and through a buckle tongue, with a first end of the seat belt being coupled to a belt retractor mounted to the vehicle body in such a way that the seat belt may be released from or retracted into the belt retractor, and with a second end of the seat belt being fixed to the vehicle body, and an airbag cushion which covers the seat belt and may be mounted at one end thereof to the buckle tongue, wherein the seat belt may be slidably mounted to the airbag cushion such that the airbag cushion does not move along with the seat belt, wherein the airbag cushion may be fluid-connected to the buckle tongue and receives airbag gas through the buckle tongue. 1. An air belt apparatus for a vehicle , comprising:a seat belt passing through a belt hook mounted to a vehicle body and through a buckle tongue, with a first end of the seat belt being coupled to a belt retractor mounted to the vehicle body in such a way that the seat belt is released from or retracted into the belt retractor, and with a second end of the seat belt being fixed to the vehicle body; andan airbag cushion which covers the seat belt and is mounted at one end thereof to the buckle tongue,wherein the seat belt is slidably mounted to the airbag cushion such that the airbag cushion does not move along with the seat belt, andwherein the airbag cushion is fluid-connected to the buckle tongue and receives airbag gas through the buckle tongue.2. The air belt apparatus for the vehicle as set forth in claim 1 , further comprising: a cushion cover which covers the airbag cushion and is mounted at one end thereof to the buckle tongue.3. The air belt apparatus for the vehicle as set forth in claim 1 , further comprising:a buckle mounted to the vehicle body wherein the buckle tongue is detachably fastened to the buckle, and when the buckle tongue is fastened to the buckle, the buckle cooperates with the buckle ...

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Номер записи: 10
31-01-2013 дата публикации

SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME

Номер: US20130026498A1
Автор: KAL Dae Sung, Lee Chung Hoon, Seo Won Cheol, Ye Kyung Hee
Принадлежит: Seoul Opto Device Co., Ltd.

A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates. 1. A substrate assembly comprising:a first substrate;a second substrate; anda bonding layer disposed between the first substrate and the second substrate,wherein the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first substrate and the second substrate.2. The substrate assembly of claim 1 , wherein the first substrate and the second substrate are homogeneous.3. The substrate assembly of claim 2 , wherein the first substrate and the second substrate comprise sapphire.4. The substrate assembly of claim 1 , wherein the bonding layer comprises at least one of a nitride semiconductor claim 1 , a silicon oxide (SiO) claim 1 , a silicon nitride (SiN) claim 1 , a mixture thereof claim 1 , and a metal comprising Ti claim 1 , Cr claim 1 , Ni claim 1 , Cu claim 1 , W claim 1 , Au claim 1 , Ag claim 1 , or an alloy thereof.5. The substrate assembly of claim 4 , wherein the bonding layer is formed on a first surface of at least one of the first substrate and the second substrate using plasma enhanced chemical vapor deposition claim 4 , sputtering claim 4 , or plating.6. A method of forming a light emitting device claim 4 , the method comprising:forming a bonding layer on at least one of a first substrate and a second substrate;bonding the first substrate and the second substrate to each other, the bonding layer being interposed between the first substrate and the second substrate;forming at least one semiconductor lamination structure on the first substrate;removing the bonding ...

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Номер записи: 11
31-01-2013 дата публикации

NON-POLAR LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер: US20130026531A1
Автор: CHOI Joo Won, Seo Won Cheol
Принадлежит: Seoul Opto Device Co., Ltd.

A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED. 1. A non-polar light emitting diode (LED) , comprising:a substrate;a lower semiconductor layer disposed on the support substrate;an upper semiconductor layer disposed on the lower semiconductor layer;a non-polar active region disposed between the lower semiconductor layer and the upper semiconductor layer; anda photonic crystal structure embedded in the lower semiconductor layer.2. The non-polar LED of claim 1 , wherein the lower semiconductor layer comprises a p-type contact layer claim 1 , and the upper semiconductor layer comprises an n-type contact layer.3. The non-polar LED of claim 2 , wherein the photonic crystal structure comprises a pattern of voids aligned parallel to one another.4. The non-polar LED of claim 3 , wherein the width and height of each of the voids are in a range from 50 to 200 nm claim 3 , and the distance between two adjacent voids is in a range from 50 nm to 1 μm.5. The non-polar LED of claim 3 , wherein the active region comprises an m-plane GaN-based well layer claim 3 , and the voids are aligned parallel to an a-direction.6. The non-polar LED of claim 3 , wherein the active region comprises an a-plane GaN-based well layer claim 3 , and the voids are aligned parallel to a c-direction.7. The non-polar LED of claim 3 ...

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Номер записи: 12
23-05-2013 дата публикации

HIGH EFFICIENCY LIGHT EMITTING DIODE

Номер: US20130126829A1
Автор: Seo Won Cheol, Yoon Yeo Jin
Принадлежит:

A high-efficiency LED includes a substrate, an n-semiconductor layer, an active layer, a p-semiconductor layer, and a transparent electrode layer. The substrate has a plurality of tapered recesses in the underside thereof, the recesses being filled with light-reflecting filler. 1. A high-efficiency light-emitting diode comprising:a substrate having a first side, an opposing second side, and tapered recesses formed in the second side;an n-semiconductor layer disposed on the first side of the substrate;an active layer disposed on the n-semiconductor layer;a p-semiconductor layer disposed on the active layer;a transparent electrode layer disposed on the p-semiconductor layer; and,a light-reflecting filler disposed in the recesses.2. The high-efficiency light-emitting diode according to claim 1 , wherein the recesses have a depth that is ⅓ to ½ of the thickness of the substrate.3. The high-efficiency light-emitting diode according to claim 1 , wherein the thickness of the substrate is from 150 μm to 250 μm.4. The high-efficiency light-emitting diode according to claim 1 , wherein the light-emitting filler is one selected from the group consisting of TiO claim 1 , PbCO claim 1 , SiO claim 1 , ZrO claim 1 , PbO claim 1 , AlO claim 1 , ZnO claim 1 , SbO claim 1 , and any combinations thereof.5. The high-efficiency light-emitting diode according to claim 1 , wherein side surfaces of the tapered recesses have an inclination of from 40° to 70° claim 1 , with respect to the plane of the second surface.6. The high-efficiency light-emitting diode according to claim 1 , wherein the substrate has a concave-convex pattern on the first surface thereof.7. The high-efficiency light-emitting diode according to claim 1 , wherein the substrate is a sapphire substrate.8. The high-efficiency light-emitting diode according to claim 1 , further comprising:an electrode pad formed on the transparent electrode layer; anda reflecting layer disposed under the electrode pad.9. The high-efficiency ...

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Номер записи: 13
23-05-2013 дата публикации

Method and apparatus for transceiving a broadcast signal in a digital broadcast system

Номер: US20130129015A1
Автор: Heung-Mook Kim, Ho-Min Eum, Hyoungsoo Lim, Jae-Hyun Seo, Soo-In Lee, Sung-Ik Park
Принадлежит: Electronics and Telecommunications Research Institute ETRI

The present invention relates to a method and apparatus for transceiving a broadcast signal in a digital broadcast system. The method for transmitting a broadcast signal according to one embodiment of the present invention comprises the following steps: generating a main signal using main data; generating an additional signal, the power of which is lower than that of the main signal, using a plurality of additional data; generating an additional signal frame using the additional signal and a frame header; and generating a broadcast signal using the main signal and an additional signal frame. The frame header is used in selectively extracting the plurality of additional data from the additional signal frame. According to the present invention, additional data can be efficiently transmitted while maintaining compatibility with existing digital broadcasting systems.

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Номер записи: 14
13-06-2013 дата публикации

DUAL CHAMBER SIDE AIR BAG APPARATUS FOR VEHICLE

Номер: US20130147167A1
Автор: Choi Hyeong Ho, Gwon Tae lk, KWAK Dae Young, Kwon Hyock In, Lee Soon Bok
Принадлежит:

A dual chamber side air bag apparatus may include an inflator mounted to a side of a sheet bag frame in an outdoor direction, an air bag cushion fluid-connected to the inflator and including a first chamber and a second chamber mounted at a side of the sheet bag frame in the outdoor direction and fluid-connected to the inflator and the first chamber to protrude and develop toward a front of the sheet bag frame when the inflator may be activated, for protecting side surface of the upper body of the passenger, and a tedder having one end thereof fixed to the sheet bag frame, a mid portion thereof wrapping the first chamber, and the other end thereof sewing-coupled to the air bag cushion in a boundary of the first and second chambers to provide a directivity so that the first chamber develops toward the upper body of the passengers. 1. A dual chamber side air bag apparatus comprising:an inflator mounted to a side of a sheet bag frame in an outdoor direction; a first chamber to push an upper body of a passenger in an indoor direction while developing by a pressure of gas generated from the inflator; and', 'a second chamber mounted at a side of the sheet bag frame in the outdoor direction and fluid-connected to the inflator and the first chamber so as to protrude and develop toward a front of the sheet bag frame when the inflator is activated, for protecting side surface of the upper body of the passenger; and, 'an air bag cushion fluid-connected to the inflator and includinga tedder having one end thereof fixed to the sheet bag frame, a mid portion thereof wrapping the first chamber, and the other end thereof sewing-coupled to the air bag cushion in a boundary of the first and second chambers to provide a directivity so that the first chamber develops toward the upper body of the passengers.2. The dual chamber side air bag apparatus of claim 1 , wherein the second chamber supports a side of the first chamber so that the second chamber pushes the first chamber in the ...

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Номер записи: 15
15-08-2013 дата публикации

UV LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

Номер: US20130207147A1
Автор: NAM Ki Bum, Oh Duck Hwan, Seo Won Cheol
Принадлежит: Seoul Opto Device Co., Ltd.

The present disclosure provides a UV light emitting diode and a method of manufacturing the same. The UV light emitting diode includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on a substrate, an electrode formed on the second conductive type semiconductor layer, and an opening formed by removing at least portions of the first conductive type semiconductor layer, the active layer, the second conductive type semiconductor layer, the reflective structure and the transparent electrode to expose a portion of the first conductive type semiconductor layer therethrough. In the UV light emitting diode, UV light is emitted from the active layer, passes through the opening, and then travels outside. 1. An ultraviolet (UV) light emitting diode comprising:a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially formed on a substrate;an electrode arranged on the second type semiconductor layer; andan opening formed in the first type semiconductor layer, the active layer, the second type semiconductor layer, and the electrode, so as to expose a portion of the first type semiconductor layer, andwherein the active layer is configured to emit UV light through the opening, to the outside of the light-emitting diode.2. The UV light emitting diode of claim 1 , wherein the electrode is configured to reflect UV light.3. The UV light emitting diode of claim 1 , wherein the electrode comprises a transparent electrode arranged on the second type semiconductor layer.4. The UV light emitting diode of claim 3 , wherein the transparent electrode comprises at least one of Ni/Au claim 3 , indium tin oxide (IT) claim 3 , ZnO claim 3 , SnO claim 3 , NiO claim 3 , and GaO.5. The UV light emitting diode of claim 3 , wherein the electrode further comprises a reflective structure arranged on the transparent electrode.6. The UV light emitting diode of claim 3 , wherein ...

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Номер записи: 16
29-08-2013 дата публикации

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Номер: US20130221399A1
Автор: KAL Dae Sung, Kim Kyoung Wan, Seo Won Cheol, Ye Kyung Hee, Yoon Yeo Jin
Принадлежит: Seoul Opto Device Co., Ltd.

Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. 1. A light emitting diode , comprising:a first type semiconductor layer;a plurality of second type semiconductor regions disposed on the first type semiconductor layer;a first electrode pad electrically connected to the first type semiconductor layer;a second electrode pad electrically connected to the plurality of second type semiconductor regions; anda plurality of second extensions extending from the second electrode pad and electrically connected to the plurality of second type semiconductor regions, respectively.2. The light emitting diode of claim 1 , further comprising:an insulation layer disposed between the plurality of second type semiconductor regions and the second electrode pad.3. The light emitting diode of claim 1 , further comprising:a first extension extending from the first type semiconductor layer and electrically connected to a first type semiconductor region.4. The light emitting diode of claim 1 , wherein at least a portion of the second electrode pad is disposed on a portion of the first type semiconductor layer claim 1 , on which the second type semiconductor layer regions are not ...

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Номер записи: 17
05-09-2013 дата публикации

LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME

Номер: US20130228793A1
Автор: KAL Dae Sung, KIM Dae Won, KIM Kwang Choong, Seo Won Cheol, Ye Kyung Hee
Принадлежит: Seoul Opto Device Co., Ltd.

The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer. 1. A light emitting diode , comprising:a substrate;an interlayer insulating layer disposed on the substrate;a first nitride semiconductor stacked structure disposed on the interlayer insulating layer, the first nitride semiconductor stacked structure comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;a second nitride semiconductor stacked structure disposed on the interlayer insulating layer, the second nitride semiconductor stacked structure comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;at least one wire electrically connected to the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure;a side insulating layer covering at least partial side surfaces of the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure, the side insulating layer configured to separate the side surfaces of the first and second nitride semiconductor stacked structure from the wire,wherein the second nitride semiconductor stacked structure is electrically connected to the first nitride semiconductor stacked ...

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Номер записи: 18
26-09-2013 дата публикации

MYB96 gene from Arabidopsis thaliana and uses thereof

Номер: US20130254936A1
Автор: Chung Mo Park, Pil Joon Seo
Принадлежит: SNU R&DB FOUNDATION

A method for increasing cuticular wax biosynthesis of plant includes transforming a plant cell with the recombinant vector containing MYB96 (myb domain protein 96) gene from Arabidopsis thaliana . A method for producing a transgenic plant with increased cuticular wax biosynthesis includes transforming a plant cell with the recombinant vector containing the MYB96 gene, and regenerating the transformed plant cell into the transgenic plant. A plant and a seed with increased cuticular wax biosynthesis are produced by the method. A method for producing a biofuel using a cuticular wax includes separating and purifying a cuticular wax from the plant. A composition for increasing cuticular wax biosynthesis of plant includes the MYB96 gene.

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Номер записи: 19
21-11-2013 дата публикации

Airbag cover and module

Номер: US20130307253A1
Автор: Chang Hyun Lee, Hyeong Ho Choi, Hyo Shub Shin, Jae Haeng Yoo, Jung Yeol Jang, Tae In Kim
Принадлежит: Hyundai Motor Co, Kia Motors Corp

An airbag cover includes a housing section which forms an upper part of which is opened and into which a folded airbag cushion is housed; and a guide section which is formed by extending an upper rear end and both ends of the opened housing section to form an additional space for extending a space of the housing section and a front surface of which at a passenger side is opened to guide an initial deployment direction of the airbag cushion toward a passenger side.

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Номер записи: 20
05-12-2013 дата публикации

LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME

Номер: US20130320301A1
Автор: CHOI Joo Won, Seo Won Cheol
Принадлежит: Seoul Opto Device Co., Ltd.

Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency. 1. A light emitting diode (LED) , comprising:a support substrate;a first semiconductor layer disposed on the support substrate;a second semiconductor layer disposed on the first semiconductor layer;an active region disposed between the first and second semiconductor layers; anda photonic crystal structure embedded in the first semiconductor layer.2. The LED of claim 1 , wherein the first semiconductor layer comprises a p-type contact layer claim 1 , and the second semiconductor layer comprises an n-type contact layer.3. The LED of claim 2 , wherein the active region comprises an AlGaN well layer claim 2 , and the p-type contact layer comprises a p-type GaN layer or a p-type AlInGaN layer.4. The LED of claim 1 , wherein the photonic crystal structure comprises a pattern of voids arramed along a surface of the support substrate.5. The LED of claim 4 , wherein a width and a height of each void of the pattern of voids is within a range of 50 to 200 nm claim 4 , and a distance between two adjacent voids is within a range of 50 nm to 1 μm.6. The LED of claim 4 , wherein the first semiconductor layer comprises at least one AlGaN layer disposed between the voids and the active region.7. The LED of claim 6 , wherein the first semiconductor layer further comprises a p-type contact layer disposed between the voids and the support substrate claim 6 , wherein the p-contact layer covers the ...

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Номер записи: 21
19-12-2013 дата публикации

LIGHT EMITTING DIODE CHIP

Номер: US20130334560A1
Автор: In Chi Hyun, KIM Chang Hoon, LEE Kyu Ho, LEE Sung Hyun, Seo Won Cheol, Suh Daewoong
Принадлежит: Seoul Opto Device Co., Ltd.

The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 μm; and a light-emitting diode provided on the surface of the substrate, at one side thereof. 1. A light emitting diode chip comprising:a substrate having a thickness exceeding 120 μm; anda light emitting diode disposed on one surface of the substrate.2. The light emitting diode chip of claim 1 , wherein the substrate has a plurality of protrusions on a side surface thereof.3. The light emitting diode chip of claim 1 , wherein the substrate has concavo-convex structures on the other surface thereof.4. The light emitting diode chip of claim 1 , wherein the substrate has a thickness from 200 μm to 400 μm.5. The light emitting diode chip of claim 1 , wherein the substrate is a transparent substrate.6. The light emitting diode chip of claim 5 , wherein light emitted from the light emitting diode is at least partially extracted through the substrate.7. The light emitting diode chip of claim 6 , wherein the substrate is a sapphire substrate. The present invention relates to a light emitting diode chip.Light emitting diodes are basically PN junction diodes formed at a junction between p-type and n-type semiconductors.When voltage is applied to p-type and n-type semiconductors of a light emitting diode, holes move from the p-type semiconductor toward the n-type semiconductor and electrons move from the n-type semiconductor toward the p-type semiconductor, such that both electrons and holes move into the PN junction.Electrons moving into the PN junction are combined with the holes while dropping from a conduction band to a valence band. Here, an energy corresponding to a height difference between the conduction band and the valence band, that is, an energy difference, is emitted in the form of light.Generally, light emitting diode chips are prepared through several processes. First, ...

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Номер записи: 22
16-01-2014 дата публикации

System and Method for Single Radio Handover

Номер: US20140016613A1
Автор: Chan Hinghung Anthony, Lee Hyeong Ho, PARK Hyunho
Принадлежит:

Single radio handovers (SRHOs) between heterogonous networks can be facilitated using several techniques. One such technique includes activating a receiver of a target radio interface in a mobile node without activating a transmitter of the target radio interface, thereby allowing the mobile node to perform target network discovery while the transmitter of the target radio interface remains deactivated. Another such technique includes encapsulating link-layer discovery frames into media independent handover frames (MIH), and then tunneling the MIH frames over a tunnel extending through the source network. This may allow the MN to achieve various handover related tasks without activating the target radio link. Another technique includes establishing a schedule (or delay period) for synchronizing deactivation of the source radio interface with activation of the transmitter in the target radio interface. 1. A method for performing single radio handover , the method comprising:establishing a source radio link between a source radio interface of a mobile node and a source network in accordance with a first communications protocol, wherein the source radio interface includes a source transmitter and a source receiver that are configured to communicate in accordance with the first communications protocol when activated;activating, by the mobile node, a target receiver in a target radio interface of the mobile node without activating a target transmitter in the target radio interface of the mobile node, wherein the target receiver and the target transmitter are configured to communicate in accordance with a second communications protocol when activated; anddiscovering, by the mobile node, a target network by detecting a transmission using the target receiver.2. The method of claim 1 , wherein the target transmitter remains deactivated when the mobile node discovers the target network.3. The method of claim 1 , further comprising:establishing a tunnel for communicating ...

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Номер записи: 23
20-03-2014 дата публикации

PATTERNED SUBSTRATE FOR LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE EMPLOYING THE SAME

Номер: US20140080239A1
Автор: Seo Won Cheol, Yoon Yeo Jin
Принадлежит: Seoul Opto Device Co., Ltd.

Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency. 1. A method of manufacturing a substrate for a light emitting diode , comprising:preparing a substrate having flat top and bottom surfaces;forming a first mask pattern on the top surface to define first recessed regions;partially etching the substrate using the first mask pattern as an etching mask to form the first recessed regions;removing the first mask pattern;forming a second mask pattern on the top surface to define second recessed regions partially overlapping the first recessed regions; andpartially etching the substrate using the second mask pattern as an etching mask to form the second recessed regions.2. The method as claimed in claim 1 , wherein the first mask pattern includes lines parallel to one another claim 1 , and the second mask pattern includes lines which intersect the parallel lines of the first mask pattern.3. The method as claimed in claim 1 , wherein sidewalls of the first and second recessed regions are formed into inclined surfaces.4. A method of fabricating a light emitting diode claim 1 , comprising:preparing a substrate having flat top and bottom surfaces;forming a first mask pattern on the top surface to define first recessed regions;partially etching the substrate using the first mask pattern as an etching mask to form the first recessed regions;removing the first mask pattern;forming a second mask pattern on the top surface to define second recessed regions partially overlapping the first ...

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Номер записи: 24
03-04-2014 дата публикации

Display Panel

Номер: US20140092078A1
Автор: Kim Ji-Sun, Kim Jong Hee, KWON Yeong-Keun, LIM Jae Keun, SEO Young Wan, YOON Soo-Wan
Принадлежит:

A display device includes a display area including a gate line and a data line and a gate driver connected to an end of the gate line, the gate driver including at least one stages integrated on a substrate configured to output a gate voltage, in which the stage includes an inverter unit and an output unit, in which the output unit includes a first transistor and a first capacitor. The first transistor includes an input terminal applied with a clock signal, a control terminal connected to the node Q, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output. An inverter voltage output from the inverter is lower than the low voltage of the gate voltage output by the output unit. 1. A display device comprising:a display area comprising a gate line and a data line; anda gate driver connected to an end of the gate line, the gate driver comprising at least one stage integrated on a substrate and configured to output a gate voltage, wherein the stage comprises an inverter unit and an output unit,wherein the output unit comprises a first transistor and a first capacitor,wherein the first transistor includes an input terminal applied with a clock signal, a control terminal connected to a node of the inverter unit, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output, and whereinan inverter voltage output from the inverter is lower than the gate voltage output by the output unit.2. The display device of claim 1 , wherein the inverter unit comprises at least two transistors connected to the inverter voltage.3. The display device of claim 2 , wherein the stage further comprises a noise removal unit having at least a first transistor pair claim 2 , wherein the first transistor pair comprises a control terminal configured to receive an output voltage of the inverter claim 2 , an input terminal connected to the node claim 2 , and an output terminal connected to the inverter ...

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Номер записи: 25
12-01-2017 дата публикации

IN-CELL TYPE DISPLAY DEVICE

Номер: US20170010708A1
Автор: CHAI Chong Chul, Kim Ji-Sun, LEE Yu Jin, SEO Young Wan
Принадлежит:

A display device includes: a first substrate including a touch region for sensing a touch and a peripheral area surrounding the touch region; a second substrate facing the first substrate; thin film transistors positioned on the first substrate; pixel electrodes connected to the thin film transistors; common electrodes arranged to transmit a common voltage; sensing wires connected to the common electrodes and arranged to transmit a detection signal for sensing a touch; and a transparent electrode layer positioned on a first surface of the second substrate, the transparent electrode layer having a portion overlapping the peripheral area, and having at least one opening positioned over the touch region. 1. A display device comprising:a first substrate including a touch region for sensing a touch and a peripheral area surrounding the touch region;a second substrate facing the first substrate;thin film transistors positioned on the first substrate;pixel electrodes connected to the thin film transistors;common electrodes arranged to transmit a common voltage;sensing wires connected to the common electrodes and arranged to transmit a detection signal for sensing a touch; anda transparent electrode layer positioned on a first surface of the second substrate, the transparent electrode layer having a portion overlapping the peripheral area, and having at least one opening positioned over the touch region.2. The display device of claim 1 , further comprising:a first insulating layer which is positioned on the thin film transistor; anda second insulating layer disposed between the pixel electrodes and the common electrodes,wherein the pixel electrode and the common electrodes are positioned on the first insulating layer.3. The display device of claim 2 , wherein the common electrodes are positioned between the pixel electrodes and the first insulating layer claim 2 , and a common electrode overlapping at least one of the pixel electrodes forms one com pad.4. The display device ...

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Номер записи: 26
24-04-2014 дата публикации

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20140110729A1
Автор: Kim Chang Youn, Kim Hwa Mok, KIM Jong Kyu, LEE Jang Woo, Lee Joon Hee, Seo Won Cheol, SHIN Jin Cheol, Yoon Yeo Jin, YOU Jong Kyun
Принадлежит: Seoul Viosys Co., Ltd.

Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. 1. A light emitting device , comprising:a substrate;light emitting cells disposed on the substrate, each light emitting cell comprising a first semiconductor layer, an active layer, and a second semiconductor layer;a first connection metal disposed between the substrate and the light emitting cells, the first connection metal electrically connecting the light emitting cells;a second connection metal disposed between the first semiconductor layers and the first connection metal, the second connection metal being electrically connected to the first semiconductor layer;a first electrode pad spaced apart from light emission surfaces of the light emitting cells and disposed on a first surface of the light emitting device opposite to the substrate, wherein the first electrode pad is electrically connected to the first semiconductor layer through the second connection metal;a second electrode pad spaced apart from light emission surfaces of the light emitting cells, wherein the second electrode pad is electrically connected to the second semiconductor layer; anda first insulating layer disposed between the first connection metal and the second connection metal.2. The light emitting device of claim 1 , further comprising a second insulating layer configured to insulate the second connection metal from the active layers and the second semiconductor layers.3. The light emitting device of claim 2 , wherein the second connection metal contacts at ...

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Номер записи: 27
05-02-2015 дата публикации

LIGHT EMITTING DIODE ASSEMBLY

Номер: US20150034979A1
Автор: KAL Dae Sung, Lee Chung Hoon, Seo Won Cheol, Yang Young Eun
Принадлежит: SEOUL SEMICONDUCTOR CO., LTD.

Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same. 1. A light emitting diode assembly comprising:a red light emitting diode chip;a short wavelength light emitting diode chip emitting light having a shorter wavelength than light emitted from the red light emitting diode chip;a first heat dissipator dissipating heat generated from the short wavelength light emitting diode chip; anda second heat dissipator dissipating heat generated from the red light emitting diode chip,the second heat dissipator having higher heat dissipation capability than the first heat dissipator.2. The light emitting diode assembly of claim 1 , further comprising:a base substrate,wherein the first heat dissipator comprises a first landing pad placed on the base substrate,the second heat dissipator comprises a second landing pad placed on the base substrate,the short wavelength light emitting diode chip is thermally coupled to the first landing pad, andthe red light emitting diode chip is thermally coupled to the second landing pad3. The light emitting diode assembly of claim 2 , wherein the second landing pad has a larger area than the first landing pad.4. The light emitting diode assembly ...

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Номер записи: 28
05-02-2015 дата публикации

PREPARATION METHOD OF PLATINUM/TIN/METAL/ALUMINA CATALYST FOR DIRECT DEHYDROGENATION OF n-BUTANE AND METHOD FOR PRODUCING C4 OLEFINS USING SAID CATALYST

Номер: US20150038758A1
Автор: Chang Hyun CHOI, Gle PARK, Ho Sik Chang, Hyun SEO, In Kyu Song, Jin Suk LEE, Jong Kwon Lee, Yeon Shick Yoo
Принадлежит: Samsung Total Petrochemicals Co Ltd

The provided is a method for preparing a platinum-tin-metal-alumina catalyst by comprising: as an active ingredient, platinum which has a high activity in a direct dehydrogenation reaction of n-butane, tin which can increase the catalyst stability by preventing carbon deposition; additionally metal for reducing the level of catalyst inactivation over the reaction time; and an alumina carrier for supporting said components. Further, provided is a method for producing a high value product, C4 olefins from low cost n-butane by using the catalyst prepared by the method according to the present invention in a direct dehydrogenation reaction.

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Номер записи: 29
31-01-2019 дата публикации

ORGANIC LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF

Номер: US20190035336A1
Автор: CHAI Chong Chul, JO KANG MOON, LEE AN SU, Park Jun Hyun, SEO Young Wan
Принадлежит:

An organic light emitting display device includes a plurality of pixels. A pixel on an ith horizontal line includes a first transistor coupled between a first power source and a first node and having a gate electrode coupled to a second node. An organic light emitting diode is coupled between the first node and a second power source. A second transistor is coupled between the second and third nodes and is turned on when a first scan signal is supplied to an ith first scan line. A third transistor is coupled between the third and first nodes. A first capacitor is coupled between an ith control line and the second node. A second capacitor is coupled between the third node and a data line. The pixels are simultaneously driven during first, second, and third periods of a frame period and sequentially driven during a fourth period of the frame period. 1. An organic light emitting display device , comprising:a plurality of pixels which includes a pixel on an ith (i is a natural number) horizontal line, the pixel on an ith horizontal line including:a first transistor coupled between a first power source and a first node, the first transistor having a gate electrode coupled to a second node;an organic light emitting diode coupled between the first node and a second power source;at least one second transistor coupled between the second node and a third node, the at least one second transistor to be turned on when a first scan signal is supplied to an ith first scan line;at least one third transistor coupled between the third node and the first node;a first capacitor coupled between an ith control line and the second node; anda second capacitor coupled between the third node and a data line, wherein the pixels are to be simultaneously driven during a first period, a second period, and a third period of a frame period and are to be sequentially driven during a fourth period of the frame period.2. The display device as claimed in claim 1 , wherein the at least one third ...

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Номер записи: 30
31-01-2019 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20190035990A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. 151-. (canceled)52. A light emitting diode (LED) package , comprising one or more light emitting diodes to emit light , wherein each single light emitting diode includes:a semiconductor stack comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer that is interposed between the first and second semiconductor layers to generate light under an electrical signal applied to the first and second type semiconductor layers, the first conductive type semiconductor layer shaped to include an inclined side wall;means in the second conductive type semiconductor layer and the active layer for exposing the first conductive type semiconductor layer;a first bump arranged on a first side of the semiconductor stack and electrically coupled to an exposed part of the first conductive type semiconductor layer;a second bump arranged on the first side of the semiconductor stack and electrically coupled to the second conductive type semiconductor layer;a protective insulation layer covering an entire ...

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Номер записи: 31
03-03-2022 дата публикации

Catalyst for Olefin Polymerization and Polyolefin Prepared Using the Same

Номер: US20220064344A1
Автор: Ahreum Kim, Junho Seo, Munhee Lee, Yujeong Jeong
Принадлежит: Hanwha Solutions Corp

The present invention relates to a catalyst for olefin polymerization. Specifically, the present invention relates to a hybrid catalyst, which is capable of preparing a polyolefin, particularly a linear low-density polyethylene, which has excellent processability and is capable of providing a film having good mechanical and optical properties.

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Номер записи: 32
25-02-2021 дата публикации

Apparatus for treating substrate

Номер: US20210054507A1
Автор: Jong Seok SEO, Jongsu CHOI, Jung-hyun Lee, Junho Seo, Kyungjin SEO, MOON Hyung Bae, Sang Jin Bae, Seunghan Lee, Younghun Jung
Принадлежит: Semes Co Ltd

An embodiment of the inventive concept provides an apparatus for treating a substrate. The apparatus for treating a substrate includes a chamber having a treating space inside the chamber and a gas inlet unit entering a gas into the treating space. The gas inlet unit includes an introduction pipe through which the gas is entered, and a discharging plate in which a discharging hole discharging the gas entered through the introduction pipe is formed. The discharging hole is arranged such that density for each area of the discharging plate is different.

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Номер записи: 33
25-02-2021 дата публикации

DISPLAY DEVICE

Номер: US20210056906A1
Автор: Kim Dong Hyun, KIM Hyeong Seok, LEE Seung Chan, SEO Young Wan
Принадлежит:

A display device includes: a display panel including a first area and a second area, wherein the first area includes first sub-pixels, and the second area includes second sub-pixels; and a power supply unit that generates a first driving voltage and a second driving voltage greater than the first driving voltage to supply the first and second driving voltages to the display panel. The first sub-pixels receive the first driving voltage, and the second sub-pixels receive the first driving voltage or the second driving voltage. 1. A display device , comprising:a display panel comprising a first area and a second area, wherein the first area includes first sub-pixels, and the second area includes second sub-pixels; anda power supply unit that generates a first driving voltage and a second driving voltage greater than the first driving voltage to supply the first and second driving voltages to the display panel,wherein the first sub-pixels receive the first driving voltage, and the second sub-pixels receive the first driving voltage or the second driving voltage.2. The display device of claim I , wherein the power supply unit comprises:a first driving voltage generator that generates the first driving voltage; anda second driving voltage generator that generates the second driving voltage.3. The display device of claim 2 , wherein the power supply unit further comprises:a first switching element selectively connecting the first driving voltage generator to the second sub-pixels; anda second switching element selectively connecting the second driving voltage generator to the second sub-pixels.4. The display device of claim 3 , further comprising a mode selector that supplies first and second mode signals to the power supply unit claim 3 ,wherein the first switching element receives the first mode signal from the mode selector to be turned on, and the second switching element receives the second mode signal from the mode selector to be turned on.5. The display device of ...

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Номер записи: 34
25-02-2021 дата публикации

DISPLAY DEVICE

Номер: US20210057506A1
Автор: CHAI Chong Chul, JO KANG MOON, SEO Young Wan
Принадлежит:

A display device includes a first pixel including a first transistor, a second transistor, and a third transistor, a second pixel disposed adjacent to the first pixel in a first direction, and including a first transistor, a second transistor, and a third transistor, and an initialization voltage line disposed between the first pixel and the second pixel, and extending in a second direction crossing the first direction. The second transistor of the first pixel and the second transistor of the second pixel are connected to the initialization voltage line. The first, second, and third transistors of the first pixel and the first, second, and third transistors of the second pixel are symmetrical with respect to the initialization voltage line. 1. A display device , comprising:a first pixel comprising a first transistor, a second transistor, and a third transistor;a second pixel disposed adjacent to the first pixel in a first direction, and comprising a first transistor, a second transistor, and a third transistor; andan initialization voltage line disposed between the first pixel and the second pixel, and extending in a second direction crossing the first direction,wherein the second transistor of the first pixel and the second transistor of the second pixel are connected to the initialization voltage line, andthe first, second, and third transistors of the first pixel and the first, second, and third transistors of the second pixel are symmetrical with respect to the initialization voltage line.2. The display device of claim 1 , wherein the second transistor of the first pixel and the second transistor of the second pixel share a source electrode.3. The display device of claim 2 , wherein the initialization voltage line overlaps the source electrode and is connected to the source electrode.4. The display device of claim 1 , further comprising:a data line that extends in the second direction across the first pixel;an insulation layer disposed on the data line; anda ...

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Номер записи: 35
02-03-2017 дата публикации

ARRAY SUBSTRATE FOR TOUCH SENSOR IN-CELL TYPE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20170060313A1
Автор: KIM Ji Sun, LEE Yu Jin, SEO Young Wan
Принадлежит:

An array substrate for a touch sensor in-cell type display device is disclosed. The array includes a base substrate, a plurality of pixels disposed on the base substrate and including a plurality of pixel rows and a plurality of pixel columns, a gate line extending in a first direction on the base substrate and disposed above and below in each pixel row, a data line extending in a second direction intersecting with the first direction on the base substrate and disposed in every two pixel columns, a touch sensing line extending in the second direction on the base substrate and parallel to the data line, a plurality of touch blocks provided by grouping the plurality of pixels by a predetermined number on the base substrate, and a common electrode disposed in each of the plurality of touch blocks. 1. An array substrate for a touch sensor in-cell type display device comprising:a base substrate;a plurality of pixels disposed on the base substrate and including a plurality of pixel rows and a plurality of pixel columns;a gate line extending in a first direction on the base substrate and disposed above and below in each pixel row;a data line extending in a second direction intersecting with the first direction on the base substrate and disposed in every two pixel columns;a touch sensing line extending in the second direction on the base substrate and parallel to the data line;a plurality of touch blocks provided by grouping the plurality of pixels by a predetermined number on the base substrate; anda common electrode being disposed in each of the plurality of touch blocks.2. The array substrate of claim 1 , wherein the touch sensing line is disposed in every two pixel columns.3. The array substrate of claim 1 , wherein the data line and the touch sensing line are separated from each other on the base substrate.4. The array substrate of claim 1 , wherein the data line and the touch sensing line are alternately disposed in the second direction on the base substrate.5. The ...

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Номер записи: 36
28-02-2019 дата публикации

LIFESAVING SYSTEM USING DRONE AND LIFESAVING METHOD USING THE SAME

Номер: US20190060679A1
Автор: CHOI Chul, KIM Hyeong Ho
Принадлежит:

Disclosed is a lifesaving system using a drone and a lifesaving method using the lifesaving system. The lifesaving system includes: a lifesaving drone provided with a parachute, the drone approaching a victim by being remotely controlled and installed in the victim, and assisting rescuing the victim from a high-rise building by operating the parachute; and a disaster management center disposing a rescuing vehicle to a disaster occurrence area and remotely controlling the lifesaving drone when a disaster report is received, or a disaster occurrence area is recognized. 1. A lifesaving system using a drone , the system comprising:a lifesaving drone provided with a parachute, the drone approaching a victim by being remotely controlled and put on by the victim, and assisting rescuing the victim from a high-rise building by operating the parachute;a drone hangar system in which the lifesaving drone is loaded; anda disaster management center remotely controlling the lifesaving drone dispatched from the drone hangar system when a disaster report is received, or a disaster occurrence area is recognized.2. The system of claim 1 , wherein the lifesaving drone includes:a communication part receiving a control command from the disaster management center;a parachute for rescuing the victim;a camera sensor detecting whether or not the victim is present in the disaster occurrence area;a positional distance sensor detecting a position and an altitude of the lifesaving drone, a distance between the drone hangar system and the lifesaving drone, and a distance between the victim and the lifesaving drone;a weight detecting sensor measuring a weight of the victim to be rescued by using the lifesaving drone;a calculating part calculating descent variables volume including a deployment timing of the parachute, a falling time required for landing of the lifesaving drone from a current altitude, an estimated landing time, and a landing position according to the measured weight of the victim ...

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Номер записи: 37
29-05-2014 дата публикации

LIGHT-EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20140145633A1
Автор: Seo Won Cheol, Yoon Yeo Jin
Принадлежит: Seoul Opto Device Co., Ltd.

A Light Emitting Diode (LED) package and a method of manufacturing the same. The LED package includes a substrate. The substrate defines therein a cavity having a tapered shape, a stepped portion formed on the upper end of the cavity, and a through hole formed in the bottom of the cavity. A conductive film fills the through-hole and is formed on the bottom and the side surfaces of the cavity. An LED has a fluorescent layer thereon, and is flip-chip bonded onto the conductive film. An encapsulant encapsulates the cavity. A Zener diode or a rectifier is provided on the silicon substrate. 1. A light-emitting diode package comprising:a substrate, wherein the substrate defines therein a cavity having a tapered shape, a stepped portion formed on an upper end of the cavity, and a through hole formed in a bottom of the cavity;a conductive film, wherein the conductive film fills the through-hole and is formed on the bottom and side surfaces of the cavity;a light-emitting diode having a fluorescent layer thereon, wherein light-emitting diode is flip-chip bonded onto the conductive film; andan encapsulant encapsulating the cavity.2. The light-emitting diode package according to claim 1 , wherein the conductive film is an Al film or an Ag film.3. The light-emitting diode package according to claim 1 , wherein the conductive film is formed under the stepped portion.4. The light-emitting diode package according to claim 1 , wherein the substrate is a silicon substrate.5. The light-emitting diode package according to claim 4 , further comprising a Zener diode formed in an area of the substrate under the cavity.6. The light-emitting diode package according to claim 4 , wherein the light-emitting diode includes a plurality of light-emitting cells.7. The light-emitting diode package according to claim 6 , further comprising a rectifier formed on an upper portion of the substrate.8. The light-emitting diode package according to claim 7 , wherein the rectifier is a diode bridge.9. A ...

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Номер записи: 38
28-02-2019 дата публикации

Electronic device and operation control method thereof

Номер: US20190064892A1
Автор: Heetae Kim, Hyuntae Jang, Jihwan LIM, Kuntak KIM, Kyejeong JEONG, Kyungha KOO, Kyungsoo Seo, Mansu Yang, Myungkee LEE, Seungchul CHOI, SooHyun Moon, Soongyu Kwon
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A control method by an electronic device is provided. The control method includes monitoring current consumption for each of a plurality of components of the electronic device, predicting a first surface temperature of the electronic device and detecting a location where heat is generated, predicting a second surface temperature by analyzing power consumption of a component corresponding to the location where heat is generated, determining whether the predicted second surface temperature is greater than or equal to a predetermined temperature, setting a target temperature when the predicted second surface temperature is greater than or equal to the predetermined temperature, and controlling the component to reduce the power consumption.

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Номер записи: 39
09-03-2017 дата публикации

Display apparatus and method for controlling the display apparatus thereof

Номер: US20170068502A1
Автор: Dong-Jin Kim, Seo-ye SEO
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A display apparatus includes an image inputter configured to perform communication with an external device; and a processor configured to: determine a resolution of image contents received through the image inputter, determine a bandwidth to transmit the received image contents to another display apparatus based on the determined resolution, determine a processing mode to transfer the received image contents to the different display apparatus, and control the image inputter to transmit the image contents processed according to the determined processing mode based on the determined bandwidth to the other display apparatus.

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Номер записи: 40
09-03-2017 дата публикации

APPARATUS AND METHOD FOR CONTROLLING SOUND, AND APPARATUS AND METHOD FOR TRAINING GENRE RECOGNITION MODEL

Номер: US20170070817A1
Автор: Kim Chang Hyun, SEO Young Wan, SHIM Eun Soo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is an apparatus and corresponding method to control sound. The apparatus includes a genre determiner configured to determine a genre of sound data by using a genre recognition model, an equalizer setter configured to set an equalizer according to the determined genre, and a reproducer configured to reproduce the sound data based on the set equalizer. 1. An apparatus to control sound , the apparatus comprising:a genre determiner configured to determine a genre of sound data by using a genre recognition model;an equalizer setter configured to set an equalizer according to the determined genre; anda reproducer configured to reproduce the sound data based on the set equalizer.2. The apparatus of claim 1 , wherein the genre determiner determines a program genre of the sound data by using the genre recognition model claim 1 , and in response to a determination that the sound data is music data claim 1 , the genre determiner determines a music genre of the sound data.3. The apparatus of claim 2 , wherein the program genre comprises at least one of news claim 2 , drama claim 2 , entertainment claim 2 , sport claim 2 , documentaries claim 2 , movie claim 2 , comedy claim 2 , and music.4. The apparatus of claim 2 , wherein the music genre comprises at least one of classical claim 2 , dance claim 2 , folk claim 2 , heavy metal claim 2 , hip hop claim 2 , jazz claim 2 , pop claim 2 , rock claim 2 , Latin claim 2 , ballad claim 2 , and rap.5. The apparatus of claim 1 , wherein the genre recognition model is generated by machine learning based on training sound data.6. The apparatus of claim 5 , wherein the machine learning algorithm comprises one of neural network claim 5 , decision tree claim 5 , generic algorithm (GA) claim 5 , genetic programming (GP) claim 5 , Gaussian process regression claim 5 , Linear Discriminant Analysis claim 5 , K-nearest Neighbor (K-NN) claim 5 , Perceptron claim 5 , Radial Basis Function Network claim 5 , Support Vector Machine (SVM) claim ...

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Номер записи: 41
17-03-2016 дата публикации

DISPLAY DEVICE

Номер: US20160078836A1
Автор: CHAI Chong Chul, KIM Ji Sun, KWON Yeong Keun, OH Won Sik, SEO Young Wan, YOON Young Soo
Принадлежит:

A display device includes pixels arranged in a matrix form, gate lines extending in a first direction; data lines extending in a second direction, first and second unit pixel columns, each defined by adjacent data lines and the pixels connected thereto, first and second channels which transmit data signals to each of the first and second unit pixel columns, and a line selector which connects the first and second channels to the data lines and provides data voltages to the data lines in response to control signals, where a pixel connected to a first gate line is connected to a data line at a side thereof, a pixel connected to a second gate line is connected to a data line at the other side thereof, and each of the first and second channels is connected to a data line of each of the first and second unit pixel columns. 1. A display device comprising:a plurality of pixels arranged substantially in a matrix form;a plurality of gate lines extending substantially in a first direction;a plurality of data lines extending substantially in a second direction;a unit pixel column defined by a predetermined number of data lines and the pixels connected to the predetermined number of data lines;first and second channels which transmit data signals to the unit pixel column;first and second unit pixel rows, each defined by a predetermined number of gate lines and the pixels connected to the predetermined number of gate lines; anda line selector which connects the first and second channels to the predetermined number of data lines and provides data voltages respectively to the predetermined number of data lines in response to a plurality of control signals,whereineach pixel in the first unit pixel row is connected to a data line located at a side thereof, andeach pixel in the second unit pixel row is connected to a data line located at the other side thereof.2. The display device of claim 1 , wherein the unit pixel column is defined by four data lines.3. The display device of claim ...

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Номер записи: 42
18-03-2021 дата публикации

DISPLAY DEVICE

Номер: US20210082353A1
Автор: CHOI Yang Hwa, KIM Sun Kwang, LEE Cheol Gon, Park Jun Hyun, SEO Young Wan
Принадлежит: SAMSUNG DISPLAY CO. LTD.

A display device includes a data line to which a data voltage is applied, a first driving voltage line to which a first driving voltage is applied, a second driving voltage line to which a second driving voltage is applied, and a pixel connected to the first and second driving voltage lines. The pixel includes a first transistor to control a driving current according to a voltage applied to a first node, a light emitting element between the first transistor and the first driving voltage line, and a capacitor between the first node and the second driving voltage line. The first driving voltage has a first high-level voltage during a first initialization period, the first driving voltage has a first mid-level voltage lower than the first high level voltage during a threshold-voltage-storage period, and the first driving voltage has a first low-level voltage during a second initialization period. 1. A display device , comprising:a data line to which a data voltage is applied;a first driving voltage line to which a first driving voltage is applied;a second driving voltage line to which a second driving voltage is applied; anda pixel connected to the first driving voltage line and the second driving voltage line, a first transistor configured to control a driving current flowing between a first electrode and a second electrode according to a voltage applied to a first node;', 'a light emitting element between the first transistor and the first driving voltage line; and', 'a capacitor between the first node and the second driving voltage line,, 'wherein the pixel includeswhereinthe first driving voltage has a first high-level voltage during a first initialization period for initializing the capacitor, andthe first driving voltage has a first mid-level voltage lower than the first high-level voltage during a threshold-voltage-storage period for storing a threshold-voltage to the capacitor, andthe first driving voltage has a first low-level voltage during a second ...

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Номер записи: 43
18-03-2021 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20210083155A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. 151-. (canceled)52. A light emitting diode (LED) package , comprising;a semiconductor stack comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer that is interposed between the first conductive type semiconductor layer and the second semiconductor layer, wherein the active layer is configured to generate light under an electrical signal applied to the first conductive type semiconductor layer and the second type semiconductor layer;a first contact layer electrically connected to the first conductive type semiconductor layer;a second contact layer electrically connected to the second conductive type semiconductor layer;an insulator disposed on the semiconductor stack, the first electrode and the second electrode; andat least three metallic materials that are spaced apart from one another and exposed to the outside of the insulator.531. The LED package of claim , wherein the at least three metallic materials include a first metallic material electrically connected to the first ...

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Номер записи: 44
23-03-2017 дата публикации

DISPLAY PANEL

Номер: US20170084241A1
Автор: Kim Ji-Sun, Kim Jong Hee, KWON Yeong-Keun, LIM Jae Keun, SEO Young Wan, YOON Soo-Wan
Принадлежит:

A display device includes a display area including a gate line and a data line and a gate driver connected to an end of the gate line, the gate driver including at least one stages integrated on a substrate configured to output a gate voltage, in which the stage includes an inverter unit and an output unit, in which the output unit includes a first transistor and a first capacitor. The first transistor includes an input terminal applied with a clock signal, a control terminal connected to the node Q, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output. An inverter voltage output from the inverter is lower than the low voltage of the gate voltage output by the output unit. 1. A display device comprising:a display area comprising a gate line and a data line; anda gate driver connected to an end of the gate line, the gate driver comprising at least one stage integrated on a substrate and configured to output a gate voltage,wherein the stage comprises an output unit and a transmitting signal generator,wherein the output unit comprises a first transistor and a first capacitor,wherein the first transistor includes an input terminal applied with a clock signal, a control terminal connected to a first node, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output,wherein a voltage of the first node is lower than the gate voltage output by the output unit, andwherein the transmitting signal generator comprises at least one transistor comprising an input terminal configured to receive the clock signal, a control terminal connected to the first node, and an output terminal connected to a transmitting signal output terminal configured to output a transmitting signal.2. The display device of claim 1 , wherein the stage further comprises a noise removal unit having at least one transistor comprising a control terminal connected to a second node of a previous stage claim 1 , ...

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Номер записи: 45
02-04-2015 дата публикации

LIGHT EMITTING DIODE

Номер: US20150091038A1
Автор: Seo Won Cheol, Yoon Yeo Jin
Принадлежит:

A light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure. 1. A light emitting diode , comprising:a substrate;a lower semiconductor layer disposed on the substrate;an upper semiconductor layer disposed on the lower semiconductor layer, such than a portion of the lower semiconductor layer is exposed;a first electrode disposed on the upper semiconductor layer and the exposed portion of the lower semiconductor layer, to supply electric current to the lower semiconductor layer;a first insulation layer disposed between the first electrode and the upper semiconductor layer; anda second electrode formed on the upper semiconductor layer, to supply electric current to the upper semiconductor layer.2. The light emitting diode of claim 1 , wherein the first insulation layer directly contacts surfaces of the upper semiconductor layer.3. The light emitting diode of claim 1 , further comprising: a second insulation layer having a distributed Bragg reflector (DBR) structure claim 1 , disposed between the first electrode and the first insulation layer claim 1 , the second insulation layer contacting the exposed portion of the lower semiconductor layer.4. The light emitting diode of claim 1 , further comprising: a second insulation ...

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Номер записи: 46
12-05-2022 дата публикации

Medium supplement for high-yield industrial culture of fastidious anaerobes and medium composition containing the same

Номер: US20220145239A1
Автор: Do-Kyung Lee, Jae-Gu SEO
Принадлежит: Enterobiome Inc

A medium supplement for high-yield culture of anaerobes is disclosed. The medium supplement includes N-acetylhexosamine, L-aspartic acid, L-cysteine and cobalamin. A culture medium including the supplement and a culture method using the culture medium are also disclosed. It is possible to provide an innovative method which is capable of achieving high-concentration culture of anaerobes that are difficult to culture in high yield. The method is cost-effective, and in particular, is capable of culturing large amounts of fastidious aerobes suitable for use in food and pharmaceutical applications.

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Номер записи: 47
19-03-2020 дата публикации

DISPLAY DEVICE AND METHOD OF DRIVING THE SAME

Номер: US20200090587A1
Автор: LEE AN SU, LEE Cheol Gon, SEO Young Wan, Woo Min Kyu
Принадлежит:

In a display device including pixels, each of the pixels may include: a first transistor coupled to a first node, a first power supply voltage line, and a second node; and a light-emitting diode coupled to the second node and a second power supply voltage line. Each image frame may include at least two emission enable periods for the light-emitting diode, and at least one emission inhibit period between the at least two emission enable periods. 1. A display device comprising pixels , wherein each of the pixels comprises:a first transistor including a gate electrode coupled to a first node, a first electrode coupled to a first power supply voltage line, and a second electrode coupled to a second node; anda light-emitting diode including an anode electrode coupled to the second node, and a cathode electrode coupled to a second power supply voltage line,wherein each of image frames includes at least two emission enable periods for the light-emitting diode, and at least one emission inhibit period between the at least two emission enable periods.2. The display device of claim 1 , further comprising:a second transistor including a gate electrode coupled to a scan line, a first electrode coupled to the first node, and a second electrode coupled to a third node;a first capacitor including a first electrode coupled to the first node, and a second electrode coupled to a first control line;a third transistor including a gate electrode coupled to a second control line, a first electrode coupled to the third node, and a second electrode coupled to the second node; anda second capacitor including a first electrode coupled to the third node, and a second electrode coupled to a data line.3. The display device of claim 1 , wherein claim 1 , during each of the at least two emission enable periods claim 1 , a first power supply voltage applied to the first power supply voltage line is greater than a second power supply voltage applied to the second power supply voltage line.4. The ...

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Номер записи: 48
19-03-2020 дата публикации

DISPLAY DEVICE

Номер: US20200090595A1
Автор: CHOI Yang Hwa, KIM Sun Kwang, LEE Cheol Gon, Park Jun Hyun, SEO Young Wan
Принадлежит:

A display device includes an initialization voltage line to which an initialization voltage is applied, a first driving voltage line to which a first driving voltage is applied, and a pixel connected to the initialization voltage line and the first driving voltage line. The pixel includes a first transistor to control a driving current flowing between a first electrode and a second electrode according to a voltage applied to a first node, a light emitting element between the first transistor and the first driving voltage line, and a first capacitor between the first node and the initialization voltage line. During an initialization period in which the light emitting element is initialized, the initialization voltage is changed from a first level voltage to a second level voltage lower than the first level voltage and the first driving voltage is changed from a first high-level voltage to a first low-level voltage. 1. A display device , comprising:an initialization voltage line to which an initialization voltage is applied;a first driving voltage line to which a first driving voltage is applied; anda pixel connected to the initialization voltage line and the first driving voltage line, a first transistor configured to control a driving current flowing between a first electrode and a second electrode according to a voltage applied to a first node;', 'a light emitting element between the first transistor and the first driving voltage line, the light emitting element having a first electrode connected to the first transistor and a second electrode connected to the first driving voltage line; and', 'a first capacitor between the first node and the initialization voltage line, wherein, 'wherein the pixel includesthe initialization voltage is changed from a first level voltage to a second level voltage lower than the first level voltage during an initialization period in which the first electrode of the light emitting element is initialized, andthe first driving voltage is ...

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Номер записи: 49
28-03-2019 дата публикации

GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Номер: US20190097067A1
Автор: Cho Chuyoung, Koh Yu Min, Park Hyeong Ho, PARK Kyungho
Принадлежит: Korea Advanced Nano Fab Center

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlGaN layer, an InAlN layer and an InAlGaN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlGaN layer, the InAlN layer and the InAlGaN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time. 1. A method of manufacturing a gallium nitride-based sensor having a heater structure , comprising:growing an n-type or p-type GaN layer on a substrate;growing a barrier layer on the n-type or p-type GaN layer;{'sub': x', '1-x', 'x', '1-x', 'x', 'y', '1-x-y, 'sequentially growing a u-GaN layer and a layer selected from the group consisting of an AlGaN layer, an InAlN layer and an InAlGaN layer on the barrier layer;'}patterning the n-type or p-type GaN layer so as to form an electrode;forming the electrode along a pattern formed on the n-type or p-type GaN layer; and{'sub': x', '1-x', 'x', '1-x', 'x', 'y', '1-x-y, 'forming a sensing material layer on the layer selected from the group consisting of the AlGaN layer, the InAlN layer and the InAlGaN layer.'}2. The method of claim 1 , wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.3. The method of claim 1 , wherein the barrier layer is formed in any one layer or a combination of layers selected from among an AlGaN layer claim 1 , an InAlN layer and a high-resistance GaN layer.4. The method of claim 1 , wherein the forming the ...

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Номер записи: 50
19-04-2018 дата публикации

DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME

Номер: US20180108843A1
Автор: KOO Bon Yong, SEO Young Wan
Принадлежит:

The display device includes a first base portion; a semiconductor layer disposed on the first base portion and including a source region, a drain region and a channel region; a first insulating layer disposed on the semiconductor layer; a gate line disposed on the first insulating layer extending in a first direction and overlapping the channel region; a second insulating layer disposed on the gate line; a first connection plug formed in the first and second insulating layer filling a first connection hole exposing the source region; a second connection plug formed in the first and second insulating layer filling a second connection hole exposing the drain region; a first and second conductive pattern disposed on the second insulating layer; a pixel electrode disposed on the second insulating layer and electrically connected to the first conductive pattern; and a data line disposed on the second insulating layer to extend in a second direction. 1. A display device , comprising:a first base portion;a semiconductor layer disposed on the first base portion and including a source region, a drain region, and a channel region;a first insulating layer disposed on the semiconductor layer;a gate line disposed on the first insulating layer and overlapping the channel region, the gate line extending in a first direction;a second insulating layer disposed on the gate line;a first connection plug formed in the first insulating layer and the second insulating layer, the first connection plug filling a first connection hole exposing the source region;a second connection plug formed in the first insulating layer and the second insulating layer, the second connection plug filling a second connection hole exposing the drain region;a first conductive pattern disposed on the second insulating layer and connected to the first connection plug;a second conductive pattern disposed on the second insulating layer, connected to the second connection plug, and spaced apart from the first ...

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Номер записи: 51
29-04-2021 дата публикации

PIXEL CIRCUIT AND DISPLAY APPARATUS HAVING THE SAME

Номер: US20210125560A1
Автор: CHAI Chong Chul, Chung Bo Yong, JO KANG MOON, LEE AN SU, Park Jun Hyun, SEO Young Wan
Принадлежит:

A pixel circuit includes a first switching element including a control electrode connected to a first node, an input electrode which receives a first power voltage and an output electrode connected to a third node, a second switching element including a control electrode which receives a compensation gate signal, an input electrode connected to a second node and an output electrode connected to the third node, a third switching element including a control electrode which receives a write gate signal, an input electrode connected to the first node and an output electrode connected to the second node, a storage capacitor including a first electrode which receives an initialization voltage and a second electrode connected to the first node, a program capacitor which receives a data voltage and connected to the second node, and an organic light emitting element connected to the third node and which receives a second power voltage. 1. A pixel circuit comprising:a first switching element comprising a control electrode connected to a first node, an input electrode which receives a first power voltage and an output electrode connected to a third node;a second switching element comprising a control electrode which receives a compensation gate signal, an input electrode connected to a second node and an output electrode connected to the third node;a third switching element comprising a control electrode which receives a write gate signal, an input electrode connected to the first node and an output electrode connected to the second node;a storage capacitor comprising a first electrode which receives an initialization voltage and a second electrode connected to the first node;a program capacitor comprising a first electrode which receives a data voltage and a second electrode connected to the second node; andan organic light emitting element comprising a first electrode connected to the third node and a second electrode which receives a second power voltage.2. The pixel ...

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Номер записи: 52
29-04-2021 дата публикации

Electroluminescent device having light trasmitting region of non-through-hole structure

Номер: US20210126225A1
Автор: Myoung Seo Park
Принадлежит: Samsung Display Co Ltd

An electroluminescent device including a lower substrate; a lower structure; and an upper encapsulation structure, in which the lower structure has a light transmitting region and a substantially opaque display region, the lower structure has an inorganic surface portion, the upper encapsulation structure has an inorganic lower surface in contact with the inorganic surface portion to form an inorganic-inorganic encapsulation contact region, and the electroluminescent device does not have a hole formed through both the lower substrate and the lower structure, a portion of the upper encapsulation structure, the portion being corresponding to the light transmitting region, is not removed, and the portion of the upper encapsulation structure is substantially surrounded by the inorganic-inorganic encapsulation contact region in a plan view.

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Номер записи: 53
07-05-2015 дата публикации

Apparatus, system and method for controlling radio resources

Номер: US20150124715A1
Автор: Hyeong Ho Lee, Hyunho Park
Принадлежит: Electronics and Telecommunications Research Institute ETRI

An apparatus, system and method for managing radio resources are disclosed. The apparatus for managing radio resources includes a media independent services (MIS) user unit, a link layer unit, and a media independent services function (MISF) unit. The link layer unit outputs its own link status and radio resource allocation status. The MISF unit receives a report on the link status and radio resource allocation status from the link layer unit, receives a report on link status of a terminal from the corresponding terminal, receives a report on link status and radio resource allocation status of a neighboring Point of Attachment (PoA) from the corresponding neighboring PoA, and receives network configuration information from a network configuration information server. The MIS user unit determines to change radio resource allocation based on information from any one of the link layer unit, the terminal, the neighboring PoA and the network configuration information server.

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Номер записи: 54
16-04-2020 дата публикации

Robotically-assisted surgical device, robotically-assisted surgery method, and system

Номер: US20200113636A1
Автор: Shinichiro Seo, Shusuke CHINO, Tsuyoshi Nagata, Yutaka Karasawa
Принадлежит: Ziosoft Inc

A robotically-assisted surgical device that assists minimally invasive robotic surgery with a surgical robot is configured to acquire volume data of a non-pneumoperitoneum state of a subject, perform a pneumoperitoneum simulation on the volume data of the non-pneumoperitoneum state to generate deformation information including movement of at least one point in the volume data of the non-pneumoperitoneum state caused by pneumoperitoneum, generate 3D data of a first virtual pneumoperitoneum state based on the volume data of the non-pneumoperitoneum state and the deformation information, derive a first planned position in the 3D data of the first virtual pneumoperitoneum state, derive a second planned position in the volume data of the non-pneumoperitoneum state based on the first planned position in the first virtual pneumoperitoneum state and the deformation information, and visualize the volume data of the non-pneumoperitoneum state with an annotation of information indicating the second planned position.

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Номер записи: 55
31-07-2014 дата публикации

LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS

Номер: US20140209940A1
Автор: Cho Dae Sung, LEE Sum Geun, Seo Won Cheol, Yang Young Eun, Ye Kyung Hee
Принадлежит: Seoul Viosys Co., Ltd.

Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer. 1. A light-emitting device , comprising:a single substrate; a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;', 'a first electrode connected to the first conductivity-type semiconductor layer; and', 'a second electrode connected to the second conductivity-type semiconductor layer,, 'at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units comprisingwherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.2. The light-emitting device of claim 1 , wherein the single substrate is an insulating substrate.3. The light-emitting device of claim 2 , wherein the single substrate is a growth substrate.4. The light-emitting device of claim 1 , wherein the first conductivity-type is an n type claim 1 , and the second conductivity-type is a p type.5. The light-emitting device of claim 1 , wherein the at least two light-emitting units share the first electrode.6. The light-emitting device of claim 1 , further comprising an ...

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Номер записи: 56
31-07-2014 дата публикации

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20140209941A1
Автор: Kim Chang Youn, Kim Hwa Mok, Lee Joon Hee, Seo Won Cheol, SHIN Jin Cheul, YOU Jong Kyun
Принадлежит: Seoul Viosys Co., Ltd.

A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. 1. A light emitting device , comprising:a bonding substrate;a plurality of LED cells disposed on the bonding substrate;a bonding metal layer disposed between the LED cells and the bonding substrate and bonding the LED cells to the bonding substrate; anda wire disposed on the bonding metal layer opposite to the bonding substrate and serially connecting the LED cells.2. A light emitting device of claim 1 ,wherein the bonding substrate is electrically isolated from the LED cells.3. A light emitting device of claim 1 , further comprising;a first insulating layer configured to insulate the wire from portions of the LED cells.4. A light emitting device of claim 3 ,wherein the first insulating layer is disposed between the LED cells and the bonding substrate.5. A light emitting device of claim 3 , further comprising;a second insulating layer disposed between the first insulating layer and the bonding metal layer.6. A light emitting device of claim 5 ,wherein the second insulating layer comprises one of SiO2, SiN, MgO, TaO, TiO2, or a polymer.7. A light emitting device of claim 1 , further comprising;a first electrode pad disposed on the bonding substrate and spaced apart from light emission surfaces of the light emitting cells.8. A light emitting device of claim 7 , further comprising;a second electrode pad disposed on the bonding substrate spaced apart from light emission surfaces of the light emitting cells.9. A light emitting device of claim 8 , wherein:each ...

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Номер записи: 57
31-07-2014 дата публикации

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Номер: US20140209962A1
Автор: Cho Dae Sung, Kim Kyoung Wan, Seo Won Cheol, Ye Kyung Hee, Yoon Yeo Jin
Принадлежит: Seoul Viosys Co., Ltd.

Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. 1. A light emitting diode , comprising:a substrate;a first conductivity-type semiconductor layer disposed on the substrate;a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer;an active layer disposed between the first conductivity-type layer and the second conductivity-type semiconductor layer;a first electrode pad electrically connected to the first conductivity-type semiconductor layer;a second electrode pad disposed on the first conductivity-type semiconductor layer;an insulation layer disposed between the first conductivity-type semiconductor layer and the second electrode pad, and electrically insulating the second electrode pad from the first conductivity-type semiconductor layer; andat least one upper extension connected to the second electrode pad and electrically is connected to the second conductivity-type semiconductor layer,wherein the first electrode pad and the second electrode pad are diagonally disposed near corners of the substrate and face each other.2. The light emitting diode of claim 1 , wherein the first conductivity-type is an n ...

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Номер записи: 58
31-07-2014 дата публикации

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Номер: US20140209966A1
Автор: Cho Dae Sung, Kim Kyoung Wan, Seo Won Cheol, Ye Kyung Hee, Yoon Yeo Jin
Принадлежит: Seoul Viosys Co., Ltd.

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. 1. A light emitting diode , comprising:a first conductivity-type semiconductor layer;second conductivity-type semiconductor regions disposed on the first conductivity-type semiconductor layer and separated from each other;an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor regions;an insulation layer covering portions of side surfaces of the second conductivity-type semiconductor regions and comprising opening regions;a first electrode pad electrically connected to the first conductivity-type semiconductor layer;a first extension extending from the first electrode pad, the first extension comprising a portion elongated along a first direction; anda second electrode pad electrically connected to the second conductivity-type semiconductor regions through one of the opening regions,wherein the second electrode pad comprises a portion disposed on the insulation layer.2. The light emitting diode of claim 1 , wherein a portion of the insulation layer is disposed between the second conductivity-type semiconductor regions and the second electrode pad.3. The light emitting diode of claim 2 , wherein the ...

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Номер записи: 59
19-05-2016 дата публикации

Method for inactivating target transcription factor using artificial small interfering peptide and use thereof

Номер: US20160138036A1
Автор: Chung Mo Park, Pil Joon Seo
Принадлежит: SNU R&DB FOUNDATION

The present invention relates to a method for targeted inactivation of transcription factor using an artificial small interfering peptide and a use thereof. According to the present invention, an artificial small interfering peptide (a-siPEP) as a truncated from of the transcription factor for regulating transcription by dimerization was produced. It was also confirmed that, as a-siPEP forms a heterodimer with a transcription factor, DNA binding and transport into a nucleus of the transcription factor are inhibited, so that inactivation of the transcription factor is achieved at protein level. The method for inhibiting transcription factor activity using a-siPEP can replace a gene knock-out method and it allows protein-level inhibition of a transcription factor. Also, it is a transcription regulation method with high precision and high efficiency that can be applied for both monocot and dicot plants.

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Номер записи: 60
17-05-2018 дата публикации

Preparation method of platinum/tin/metal/alumina catalyst for direct dehydrogenation of n-butane and method for producing c4 olefins using said catalyst

Номер: US20180133694A1
Автор: Chang Hyun CHOI, Gle PARK, Ho Sik Chang, Hyun SEO, In Kyu Song, Jin Suk LEE, Jong Kwon Lee, Yeon Shick Yoo
Принадлежит: Samsung Total Petrochemicals Co Ltd

The provided is a method for preparing a platinum-tin-metal-alumina catalyst by comprising: as an active ingredient, platinum which has a high activity in a direct dehydrogenation reaction of n-butane, tin which can increase the catalyst stability by preventing carbon deposition; additionally metal for reducing the level of catalyst inactivation over the reaction time; and an alumina carrier for supporting said components. Further, provided is a method for producing a high value product, C 4 olefins from low cost n-butane by using the catalyst prepared by the method according to the present invention in a direct dehydrogenation reaction.

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Номер записи: 61
17-05-2018 дата публикации

Battery module and battery pack comprising same

Номер: US20180138475A1
Автор: Bo-Hyon Kim, Hyun-Young Cho, Jae-Hyun Seo, Nam-In Kim, Young-Sop EOM
Принадлежит: LG Chem Ltd

Provided is a battery module. The battery module according to an embodiment of the present disclosure may include: a cartridge assembly including a plurality of cartridges receiving battery cells; a substrate protecting body combined to the cartridge assembly; a casing receiving the cartridge assembly and the substrate protecting body and surrounding the cartridge assembly and the substrate protecting body; and a cover combined to the casing, wherein the substrate protecting body includes a interval retaining unit so that a main body of the substrate protecting body is separated from the casing at a predetermined interval.

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Номер записи: 62
17-06-2021 дата публикации

System for Storing Solid State Hydrogen

Номер: US20210180752A1
Автор: Ji Hye Park, Ji Sung Lee, Jun Seok SEO
Принадлежит: Hyundai Motor Co, Kia Motors Corp

A system for storing solid state hydrogen includes: a solid state hydrogen storage pellet including a magnetic material and storing solid state hydrogen therein; an inner container surrounding the solid state hydrogen storage pellet; and a coil surrounding the inner container, wherein when current is supplied to the coil, the current reacts with the magnetic material included in the solid state hydrogen storage pellet to form an induction magnetic field, thereby heating the solid state hydrogen storage pellet.

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Номер записи: 63
09-06-2016 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20160163941A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. 151-. (canceled)53. The LED package of claim 52 , wherein the second protective insulation layer covers a periphery of the semiconductor layers.54. The LED package of claim 52 , wherein the second contact layer comprises a reflective layer.55. The LED package of claim 52 , wherein the first contact layer further comprises a reflective layer.56. The LED package of claim 52 , further comprising a third insulation layer covering the first electrode pad and the second electrode pad.57. The LED package of claim 52 , further comprising a wavelength convertor arranged on a second side of the light emitting cells.58. The LED package of claim 52 , wherein the first light emitting cell and the second light emitting cell are separated from each other.59. The LED package of claim 52 , wherein the first protective insulation layer or the second protective insulation layer or the both include a distributed Bragg reflector.60. The LED package of claim 52 , wherein the first electrode pad and the second electrode pad are located under the second protective ...

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Номер записи: 64
23-05-2019 дата публикации

Apparatus for controlling line guide of automated material handling system and method thereof

Номер: US20190158178A1
Автор: Hak Seo Oh, Hyo Suk Park, Jin Hwan Ko, Sung Hyuk YOUN, Youl Kwon Sung
Принадлежит: Hak Seo Oh

An apparatus for controlling line guide of an automated material handling system, comprises: optical lines in which a side light emission optical fiber is installed in the whole section of a confluence of a plurality of lines of lines for moving the unmanned transport devices; a main confluence control device which is installed at the confluence, performs optical communication with the unmanned transport device through the optical line; and a sub-confluence control device which is installed in the unmanned transport device, performs optical communication with the main confluence control device through the optical line to report an entry state or a pass completion state for the confluence, and controls the unmanned transport device to perform an entry operation or a standby operation depending on the pass control signal.

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Номер записи: 65
02-07-2015 дата публикации

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Номер: US20150187996A1
Автор: Cho Dae Sung, Kim Kyoung Wan, Seo Won Cheol, Ye Kyung Hee, Yoon Yeo Jin
Принадлежит:

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. 114-. (canceled)15. A light emitting diode , comprising:a substrate;a first light emitting region and a second light emitting region disposed over the substrate;each light emitting region comprising;a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;a first electrode pad electrically connected to the first conductivity type semiconductor layer;a second electrode pad formed over the second conductivity type semiconductor layer;a first extension extending from the first electrode pad towards the second electrode pad and disposed between the first and second light emitting regions to be electrically connected to a portion of the first conductivity type semiconductor layer exposed through the second conductivity type semiconductor layer; andan insulation layer disposed between the second electrode pad and the portion of the first conductivity type semiconductor layer which is exposed through the second conductivity type semiconductor layer;wherein the first and the second light emitting regions ...

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Номер записи: 66
18-09-2014 дата публикации

METHOD OF PROVIDING PROXIMITY SERVICE COMMUNICATION BETWEEN TERMINALS SUPPORTING PROXIMITY SERVICE COMMUNICATIONS

Номер: US20140273850A1
Автор: Lee Hyeong Ho, PARK Hyunho
Принадлежит: Electronics and Telecommunications Research Institute

The present invention relates to a method of providing proximity service communication between terminals. In accordance with an embodiment, a first terminal makes connection to a second terminal with network assistance. The first terminal requests information required to search for the second terminal from a network management server. The network management server determines a communication mode for proximity service communication. The network management server transmits a request message requesting communication between the first terminal and the second terminal in the communication mode to the first and second terminals. In accordance with another embodiment, a first terminal may switch its proximity service communication technology for better QoS without network assistance. The first terminal monitors link status. If the link status is deteriorated, the first terminal requests a second terminal to change proximity service communication technology. The first and the second terminal switch their proximity service communication technologies. 1. A method of providing proximity service communication between terminals supporting proximity service communications:requesting, by a first terminal connected to a first access network, information required to search for a target terminal from a network management server;transmitting, by the network management server, information about the target terminal selected based on the requested information to the first terminal;determining, by the network management server, a communication mode for proximity service communication between the first terminal and a second terminal that is the target terminal connected to a second access network;if the communication mode between the first terminal and the second terminal has been determined, transmitting, by the network management server, a first request message requesting communication between the first terminal and the second terminal in the determined communication mode to the first ...

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Номер записи: 67
19-07-2018 дата публикации

PIXEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME

Номер: US20180204510A1
Автор: CHAI Chong Chul, Chung Bo Yong, JO KANG MOON, LEE AN SU, Park Jun Hyun, SEO Young Wan
Принадлежит:

A pixel including an organic light emitting diode; a first transistor for controlling the amount of current flowing from a first driving power source to a second driving power source via the organic light emitting diode, corresponding to a voltage of a first node; a second transistor coupled between the first node and a second node, the second transistor being turned on when a scan signal is supplied to an ith (i is a natural number) scan line; a third transistor coupled between the second node and an anode electrode of the organic light emitting diode; a first capacitor coupled between a data line and the second node; and a fourth transistor coupled between an initialization power source and the anode electrode of the organic light emitting diode. The fourth transistor is turned on in response to a first control signal being supplied to a first control line. 1. A pixel comprising:an organic light emitting diode;a first transistor configured to control the amount of current flowing from a first driving power source to a second driving power source via the organic light emitting diode, corresponding to a voltage of a first node;a second transistor coupled between the first node and a second node, the second transistor configured to be turned on in response to a scan signal being supplied to an ith (i is a natural number) scan line;a third transistor coupled between the second node and an anode electrode of the organic light emitting diode;a first capacitor coupled between a data line and the second node; anda fourth transistor coupled between an initialization power source and the anode electrode of the organic light emitting diode, the fourth transistor configured to be turned on in response to a first control signal being supplied to a first control line.2. The pixel of claim 1 , further comprising a storage capacitor coupled between the first node and the initialization power source.3. The pixel of claim 1 , wherein a turn-on period of the fourth transistor at ...

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Номер записи: 68
29-07-2021 дата публикации

Magnet temperature estimating device for motor and hybrid vehicle provided with the same

Номер: US20210234496A1
Автор: Genri Suzuki, Nobuhide Seo
Принадлежит: Mazda Motor Corp

A magnet temperature estimating device for a motor provided with a rotor having magnets and configured to output a rotational motive force, and a stator having a plurality of coils opposing the rotor with an aperture therebetween, is provided. The device includes a sensor configured to detect an induced voltage induced by rotation of the rotor, and a controller configured to control the motor by supplying power to the plurality of coils in response to an input of a detection signal from the sensor. The controller estimates a temperature of one of the magnets based on an amplitude of a frequency spectrum corresponding to a given frequency, among frequency components constituting the induced voltage.

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Номер записи: 69
27-07-2017 дата публикации

EVENT SIGNAL PROCESSING METHOD AND APPARATUS

Номер: US20170213077A1
Автор: CHO Baek Hwan, CHO Jaehoon, Park Jin-Man, Park Keun Joo, RYU Eric Hyunsurk, SEO Young Wan
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An event signal processing method and apparatus are provided. The event signal processing method includes receiving, from an event-based sensor, event signals including timestamps, generating a first timestamp map based on the timestamps, and interpolating a new timestamp into the first timestamp map based on at least two timestamps of the first timestamp map, to generate a second timestamp map. 1. An event signal processing method comprising:receiving, from an event-based sensor, event signals comprising timestamps;generating a first timestamp map based on the timestamps; andinterpolating a new timestamp into the first timestamp map based on at least two timestamps of the first timestamp map, to generate a second timestamp map.2. The event signal processing method of claim 1 , wherein the generating the first timestamp map comprises setting a value of a pixel of the first timestamp map to a timestamp included in an event signal corresponding to the pixel claim 1 , among the event signals.3. The event signal processing method of claim 1 , wherein the interpolating comprises interpolating the new timestamp into the first timestamp map based on a timestamp of a pixel adjacent to a pixel having the new timestamp claim 1 , among pixels of the first timestamp map.4. The event signal processing method of claim 1 , wherein the interpolating comprises interpolating the new timestamp into the first timestamp map based on an average of the at least two timestamps.5. The event signal processing method of claim 1 , wherein the interpolating comprises:dividing a pixel among pixels of the first timestamp map into new pixels; andinterpolating new timestamps into the new pixels based on the at least two timestamps.6. The event signal processing method of claim 5 , wherein the interpolating the new timestamps comprises setting each of the new timestamps to a timestamp of the divided pixel.7. The event signal processing method of claim 5 , wherein the interpolating the new timestamps ...

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Номер записи: 70
19-08-2021 дата публикации

Friction engagement element control system and method of controlling friction engagement element

Номер: US20210254672A1
Автор: Hirofumi EBISUMOTO, Nobuhide Seo, Tsukasa SORI
Принадлежит: Mazda Motor Corp

A friction engagement element control system is provided, which includes a friction engagement element including friction plates, which are an input-side friction plate and an output-side friction plate, and an actuation system configured to engage the input-side friction plate with the output-side friction plate with a pushing force, the friction plates having a characteristic in which a friction coefficient thereof decreases as a rotational difference between the friction plates increases. The device includes a controller configured to control the pushing force so that the negative slope characteristic becomes a positive slope characteristic in which a frictional force of the friction engagement element decreases as the rotational difference decreases, when engaging the friction engagement element.

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Номер записи: 71
09-07-2020 дата публикации

Foldable device

Номер: US20200218311A1
Автор: Myoung Seo Park
Принадлежит: Samsung Display Co Ltd

A foldable device is disclosed, and more particularly, a foldable display device is disclosed. The foldable device comprises a hinge structure which comprises a first body, a second body, and a first hinge connecting the first body to the second body, and a plate structure which is disposed on the hinge structure and comprises a first plate region corresponding to the first body and a second plate region corresponding to the second body.

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Номер записи: 72
19-08-2021 дата публикации

Fuel cell cooling system and control method of the same

Номер: US20210257632A1
Автор: Jun Seok SEO, Jung Tak Kang, Yong Doo Son
Принадлежит: Hyundai Motor Co, Kia Motors Corp

A fuel cell cooling system and a control method are provided. The fuel cell cooling system includes a fuel cell module having a fuel cell stack and a first cooling water line through which primary cooling water undergoing heat exchange with the fuel cell stack to adjust a temperature of the fuel cell stack circulates. A cooling module includes a second cooling water line through which secondary cooling water circulates and a cooling tower is configured to adjust a temperature of the secondary cooling water. A heat exchanger is connected between the first cooling water line of the fuel cell module and the second cooling water line of the cooling module for heat exchange. A controller configured to operate the fuel cell module and the cooling module.

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Номер записи: 73
18-08-2016 дата публикации

GATE CIRCUIT, DRIVING METOHD FOR GATE CIRCUIT AND DISPLAY DEVICE USING THE SAME

Номер: US20160240129A1
Автор: CHAI Chong Chul, Kim Ji-Sun, Kim Jong Hee, LIM Jae Keun, Park Jun Hyun, SEO Young Wan
Принадлежит:

A gate circuit according to an exemplary embodiment of the present inventive concept comprises a plurality of stages, each receiving a clock signal and outputting a gate signal and a carry signal. One of the plurality of stages includes a first transistor of which a first terminal and a control terminal are connected to each other and a carry signal of a stage before previous stage is input to the first terminal and the control terminal and a second transistor of which a gate signal of the previous stage is input to a first terminal, a control terminal is connected with a second terminal of the first transistor, and an output terminal is connected to a first node. 2. The gate driver of claim 1 , further comprising:a third transistor, a control terminal of which is connected to the first node and an input terminal of which is connected to the clock signal; anda capacitor connected to the first node and an output terminal of the third transistor,wherein the capacitor is pre-charged corresponding to the gate signal of the previous stage during the enable time of the gate signal of the previous stage and boosted during the rising time of the clock signal.3. The gate driver of claim 2 , further comprising a fourth transistor including a first terminal to which the clock signal is applied and a control terminal connected to the first node claim 2 ,wherein the carry signal corresponding to the clock signal applied to the fourth transistor is generated.4. The gate driver of claim 3 , further comprising a fifth transistor including a first terminal connected to the control terminal of the second transistor claim 3 , a control terminal to which the carry signal is input claim 3 , and a second terminal to which a low voltage is applied claim 3 ,wherein the fifth transistor applies the low voltage to the control terminal of the second transistor according to the carry signal.5. The gate driver of claim 1 , further comprising a fifth transistor including a first terminal ...

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Номер записи: 74
27-08-2015 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20150243844A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack, including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. 151-. (canceled)52. A method of fabricating a light emitting diode (LED) , the method comprising:forming a semiconductor stack over a first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;patterning the second conductive type semiconductor layer and the active layer to form a plurality of contact holes exposing at least a portion of the first conductive type semiconductor layer;forming a protective insulation layer covering a sidewall of the semiconductor stack;forming a first pad and a second pad over the semiconductor stack; andforming a dummy bump to provide a heat passage for discharging heat from the semiconductor stack,wherein the first pad is electrically connected to the first conductive type semiconductor layer via the plurality of contact holes,the second pad is electrically connected to the second conductive type semiconductor layer.53. The method of claim 52 , wherein the first substrate comprises an impurity for converting a ...

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Номер записи: 75
10-09-2015 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20150255686A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

A light emitting diode (LED) package includes a plurality of light emitting cells each including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer of each of the light emitting cells, the contact holes exposing the first conductive type semiconductor layer of each of the light emitting cells; a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other; a first bump arranged on the first side of the light emitting cells; and a second bump arranged on the first side of the light emitting cells. 1. A light emitting diode (LED) package , comprising:a plurality of light emitting cells each comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer of each of the light emitting cells, the contact holes exposing the first conductive type semiconductor layer of each of the light emitting cells;a protective insulation layer covering a sidewall of each of the light emitting cells;a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting cells to each other;a first bump arranged on the first side of the light emitting cells and electrically connected to the first conductive type semiconductor layer via the plurality of contact holes of a first light emitting cell of the light emitting cells; anda second bump arranged on the first side of the light emitting cells and electrically connected to the second conductive type semiconductor layer of a second light emitting cell of the light emitting cells.2. The LED package of claim 1 , further comprising a wavelength converter arranged on a ...

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Номер записи: 76
20-11-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20140339566A1
Автор: Cho Dae Sung, Lee Chung Hoon, NAM Ki Bum, Seo Won Cheol
Принадлежит:

Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate. 1. A light emitting diode (LED) , comprising:a substrate;a semiconductor stack disposed on the substrate and comprising a gallium nitride (GaN)-based p-type semiconductor layer, a GaN-based active layer, and a GaN-based n-type semiconductor layer;a p-electrode layer in ohmic contact with the p-type semiconductor layer and disposed between the substrate and the semiconductor stack; anda transparent oxide layer disposed on the semiconductor stack and comprising a first surface comprising a concavo-convex pattern,{'sup': 6', '2, 'wherein the semiconductor stack has a dislocation density of 5×10/cmor less.'}2. (canceled)3. The LED of claim 1 , further comprising an n-electrode pad disposed on the first surface of the transparent oxide layer and electrically connected to the n-type semiconductor layer.4. The LED of claim 1 , further comprising:an n-electrode layer disposed between the substrate and the semiconductor stack and connected to the n-type semiconductor layer through a through-hole penetrating the p-type semiconductor layer and the active layer; andan insulation layer insulating the p-electrode layer and the n-electrode layer from each other.5. The LED of claim 4 , further comprising a p-electrode pad disposed ...

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Номер записи: 77
09-09-2021 дата публикации

DISPLAY DEVICE

Номер: US20210280659A1
Автор: KIM Hyeong Seok, LEE Cheol Gon, LEE Yu Jin, Park Jun Hyun, SEO Young Wan
Принадлежит:

A display device includes a display panel having a general area including first subpixels, and a sensor area including second subpixels and light-transmitting area. Each of the first subpixels and the second subpixels includes a first active layer disposed on a substrate and formed of a first material, a first gate layer disposed on the first active layer, a second gate layer disposed on the first gate layer, a second active layer disposed on the second gate layer and formed of a second material different from the first material, a third gate layer disposed on the second active layer, and a light-blocking layer disposed between the substrate and the first active layer and overlapping the second active layer in a thickness direction. 1. A display device , comprising:a display panel having a general area comprising a plurality of first subpixels, and a sensor area comprising a plurality of second subpixels and a light-transmitting area,wherein the light-transmitting area transmits light therethrough,wherein each of the first subpixels and the second subpixels comprises:a first active layer disposed on a substrate and formed of a first material;a first gate layer disposed on the first active layer;a second gate layer disposed on the first gate layer;a second active layer disposed on the second gate layer and formed of a second material different from the first material;a third gate layer disposed on the second active layer; anda light-blocking layer disposed between the substrate and the first active layer and overlapping the second active layer in a thickness direction.2. The display device of claim 1 , wherein each of the first subpixels and the second subpixels further comprises:a driving transistor that controls a driving current provided to a light-emitting element;a first transistor that selectively provides an initialization voltage to a first node that is a gate electrode of the driving transistor;a second transistor that selectively connects the first node and ...

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Номер записи: 78
30-08-2018 дата публикации

IMAGE PROCESSING METHOD FOR AUTONOMOUS DRIVING AND APPARATUS THEREOF

Номер: US20180246521A1
Автор: CHO Baek Hwan, JEON Paul Barom, SEO Young Wan
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A processor implemented image processing method includes recognizing a target object in a first frame of an input image; adjusting an exposure of a second frame of the input image based on a brightness of the target object; and generating a synthesized image by synthesizing the first frame and the second frame. 1. A processor implemented image processing method , comprising:recognizing a target object in a first frame of an input image;adjusting an exposure of a second frame of the input image based on a brightness of the target object; andgenerating a synthesized image by synthesizing the first frame and the second frame.2. The method of claim 1 , wherein the recognizing of the target object comprises:recognizing a road in the first frame;setting a region on the road as a recognition region; andrecognizing the target object in the recognition region.3. The method of claim 1 , wherein the recognizing of the target object comprises recognizing the target object based on the first frame and a position of a vehicle.4. The method of claim 1 , wherein the target object comprises any one or any combination of two or more of a tunnel entrance claim 1 , a tunnel exit claim 1 , and a light of a vehicle.5. The method of claim 1 , wherein the adjusting of the exposure of the second frame and the generating of the synthesized image are performed in response to a difference between the brightness of the target object and a brightness of a remaining region not including the target object in the first frame being greater than a predetermined threshold.6. The method of claim 1 , wherein the adjusting of the exposure of the second frame comprises:decreasing the exposure of the second frame in response to the brightness of the target object being greater than a brightness of a remaining region not including the target object in the first frame; andincreasing the exposure of the second frame in response to the brightness of the target object being less than the brightness of the ...

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Номер записи: 79
04-12-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20140353679A1
Автор: Cho Dae Sung, Lee Chung Hoon, NAM Ki Bum, Seo Won Cheol
Принадлежит:

Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency. 1. A light-emitting diode (LED) , comprising:a conductive substrate; anda gallium nitride (GaN)-based semiconductor stack disposed on the conductive substrate,wherein the semiconductor stack comprises an active layer comprising a semi-polar semiconductor material.2. The LED of claim 1 , wherein the GaN-based semiconductor stack comprises semiconductor layers disposed on a semi-polar GaN substrate.3. The LED of claim 2 , wherein the semi-polar GaN substrate comprises miscut semi-polar GaN having a principal surface inclined at an angle ranging from 15 to 85 degrees with respect to c-plane.4. The LED of claim 3 , wherein the conductive substrate is the semi-polar GaN substrate.5. The LED of claim 1 , wherein the conductive substrate comprises a metal.6. The LED of claim 5 , further comprising a reflective layer disposed between the conductive substrate and the semiconductor stack.7. The LED of claim 1 , further comprising a transparent oxide layer disposed on the semiconductor stack.8. The LED of claim 7 , wherein the transparent oxide layer comprises a first surface comprising a concavo-convex pattern.9. The LED of claim 8 , wherein the transparent oxide layer comprises indium tin oxide (ITO) or zinc oxide (ZnO).10. The LED of claim 8 , wherein an upper surface of the semiconductor stack contacting the transparent oxide layer comprises a concavo-convex pattern.11. A method of fabricating a light-emitting diode (LED) claim 8 , the method comprising:preparing a miscut semi-polar GaN substrate comprising a first surface inclined at an angle ranging from 15 to 85 ...

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Номер записи: 80
04-12-2014 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20140353708A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump. 1. A light-emitting diode (LED) , comprising:a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types;a first contact layer disposed on the first type semiconductor layer;a second contact layer disposed on the second type semiconductor layer;a first insulation layer covering the second contact layer, sidewalls of the active layer, and the second semiconductor layer, and contacting the first contact layer, the first insulation layer comprising a first opening exposing the first semiconductor layer and a second opening exposing the second contact layer;a second insulation layer is disposed on the first insulation layer;a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer;a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected ...

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Номер записи: 81
29-08-2019 дата публикации

Mobile terminal and method for operating the same

Номер: US20190265871A1
Автор: Jieun Lee, Jieun YOON, Junho Seo, Kyungrak CHOI, Sanghyun Eim, Soyeon YIM
Принадлежит: LG ELECTRONICS INC

The present invention relates to a mobile terminal and a method of operating the same. A mobile terminal according to an embodiment of the present invention includes a display to display screen information thereon, a user input unit to receive a capture command, and a controller to capture the screen information according to the capture command and detect an operation associated with the captured screen information. In addition, the controller detects an entry into a capture utilization mode, and displays a menu varied based on an operation detected after the capture command together with the captured screen information in the capture utilization mode.

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Номер записи: 82
20-08-2020 дата публикации

Ultra high strength hot-rolled steel sheet having excellent ductility and method for manufacturing same

Номер: US20200263270A1
Автор: Seok-Jong SEO, Sung-il Kim
Принадлежит: Posco Co Ltd

Provided is an ultra high strength hot-rolled steel sheet including, in percentage by weight: 0.15-0.25% of C, 0.6-2.0% of Si, 1.5-3.0% of Mn, 0.01-0.1% of Al, 0.01-0.5% of Cr, 0.005-0.2% of Mo, 0.001-0.05% of P, 0.001-0.05% of S, 0.001-0.01% of N, 0.003-0.1% of Nb, 0.003-0.1% of Ti, 0.003-0.1% of V, and the remainder being Fe and other unavoidable impurities, and satisfying following relational expressions (1) and (2). [Relational Expression 1] 4.5≤[Mn]+12[sol.C]+2.5[Mo]+2[Cr]+300[B]+[V]≤5.3. [Relational Expression 2] [sol.C]=[C]−(0.25[Ti]+0.13[Nb]+0.125[Mo]), 0.17≤[sol.C]≤0.22. (In relational expressions 1 and 2, each element symbol represents the content of each element in wt %.)

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Номер записи: 83
06-10-2016 дата публикации

DISPLAY DEVICE

Номер: US20160291368A1
Автор: KIM Ji Sun, Kim Jong Hee, LIM Jae Keun, SEO Young Wan
Принадлежит:

Embodiments relate to a display device including: a first base substrate; gate lines disposed on the first base substrate, the gate lines extending in a first direction; parasitic capacitance electrodes coupled to the gate lines; data lines extending in a second direction crossing the first direction; transistors, each coupled to one of the gate lines and coupled to one of the data lines; and pixels sequentially arranged in the first direction, each of the pixels coupled to a corresponding one of the transistors, respectively. Each of the transistors includes a gate electrode, a source electrode, and a drain electrode, and at least two drain electrodes among the drain electrodes of the transistors each overlap a corresponding one of the parasitic capacitance electrodes in different areas as viewed from a plan view. 1. A display device comprising:a first base substrate;gate lines disposed on the first base substrate, the gate lines extending in a first direction;parasitic capacitance electrodes coupled to the gate lines;data lines extending in a second direction crossing the first direction;transistors, each coupled to one of the gate lines and coupled to one of the data lines; andpixels sequentially arranged in the first direction, each of the pixels coupled to a corresponding one of the transistors, respectively,wherein each of the transistors comprises a gate electrode, a source electrode, and a drain electrode, andwherein at least two drain electrodes among the drain electrodes of the transistors each overlap a corresponding one of the parasitic capacitance electrodes in different areas as viewed from a plan view.2. The display device as claimed in claim 1 , wherein at least two pixels among the pixels have different pixel sizes.3. The display device as claimed in claim 2 ,wherein the data lines comprise a first data line, a second data line, a third data line, and a fourth data line sequentially arranged along the first direction,wherein a first pixel among the ...

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Номер записи: 84
05-10-2017 дата публикации

Mobile terminal and method for controlling the same

Номер: US20170285933A1
Автор: Euitaek OH, Junho Seo, Minhyeok Kim, Sanga Kim, Yoonchan Won
Принадлежит: LG ELECTRONICS INC

A mobile terminal including a wireless communication processor configured to provide wireless communication; a touch screen; and a controller configured to display a first content containing an input field region on the touch screen, display a virtual keypad on the first content for inputting information into the input field, in response to a first touch input applied to the virtual keypad exceeding a reference pressure, increase a transparency of the displayed virtual keypad so as to display a screen layered below the virtual keypad, and in response to a second touch input applied to the screen, limit an input of a control command to a key of the virtual keypad and control the displayed screen based on the second touch input.

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Номер записи: 85
06-10-2016 дата публикации

DEMULTIPLEXER AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20160293093A1
Автор: CHAI Chong Chul, KIM Ji Sun, Kim Jong Hee, LIM Jae Keun, SEO Young Wan
Принадлежит:

A demultiplexer includes: a first transistor connected between a data input terminal and a first output terminal; a second transistor connected between the data input terminal and a second output terminal; and a first pre-charge circuit connected to a gate electrode of the first transistor, the first pre-charge circuit including: a third transistor and a first diode connected between a first clock input terminal and the gate electrode of the first transistor in parallel; and a first capacitor connected between a second clock input terminal and the gate electrode of the first transistor. 1. A demultiplexer comprising:a first transistor connected between a data input terminal and a first output terminal;a second transistor connected between the data input terminal and a second output terminal; and a third transistor and a first diode connected between a first clock input terminal and the gate electrode of the first transistor in parallel; and', 'a first capacitor connected between a second clock input terminal and the gate electrode of the first transistor., 'a first pre-charge circuit connected to a gate electrode of the first transistor, the first pre-charge circuit comprising2. The demultiplexer of claim 1 , wherein a gate electrode of the third transistor is connected to a third clock input terminal.3. The demultiplexer of claim 1 ,wherein an anode electrode of the first diode is connected to the first clock input terminal, andwherein a cathode electrode of the first diode is connected to the gate electrode of the first transistor.4. The demultiplexer of claim 1 , further comprising a second pre-charge circuit connected to a gate electrode of the second transistor.5. The demultiplexer of claim 4 , wherein the second pre-charge circuit comprises:a fourth transistor and a second diode connected between a third clock input terminal and the gate electrode of the second transistor in parallel; anda second capacitor connected between a fourth clock input terminal and ...

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Номер записи: 86
06-10-2016 дата публикации

GATE DRIVER AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20160293131A1
Автор: CHAI Chong Chul, KIM Ji Sun, Kim Jong Hee, LIM Jae Keun, SEO Young Wan
Принадлежит:

A gate driver includes a plurality of stage circuits to output a clock signal from the outside as gate signals. A jth stage circuit includes an input unit to charge a first node at an initial voltage when a first input signal is input to a first input terminal, a buffer unit to output the clock signal as a gate signal to an output terminal when the initial voltage is supplied to the first node, a holding unit to maintain the first node at a reset power source level when the clock signal is supplied to the holding unit, and an inverter unit to supply the clock signal or the reset power source to the holding unit. The input unit maintains the first node at a second input signal input voltage to a second input terminal when a third input signal is input to a third input terminal. 1. A gate driver comprising a plurality of stage circuits configured to output a clock signal input from the outside as gate signals ,wherein a jth (j is a natural number greater than 2) stage circuit of the stage circuits comprises:an input unit configured to charge a first node at a level of an initial voltage when a first input signal is input to a first input terminal;a buffer unit configured to output the clock signal as a gate signal to an output terminal when the initial voltage is supplied to the first node;a holding unit configured to maintain the first node at a level of a reset power source when the clock signal is supplied to the holding unit; andan inverter unit configured to supply the clock signal or the reset power source to the holding unit when the clock signal or the reset power source is supplied to the inverter unit, andwherein the input unit is configured to maintain the first node at a voltage level of a second input signal input to a second input terminal when a third input signal is input to a third input terminal.2. The gate driver of claim 1 , wherein the input unit comprises:a second transistor having a first electrode and a gate electrode connected to a first input ...

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Номер записи: 87
06-10-2016 дата публикации

SHIFT REGISTER AND DISPLAY DEVICE HAVING THE SAME

Номер: US20160293269A1
Автор: CHAI Chong Chul, KIM Ji Sun, Kim Jong Hee, LIM Jae Keun, SEO Young Wan
Принадлежит:

There is provided a shift register including a plurality of stages sequentially coupled to an input terminal configured to receive a start pulse, wherein each of the plurality of stages includes a first transistor coupled between a first clock input terminal and an output terminal and having a first gate electrode coupled to a first node, a second transistor coupled between the output terminal and a power input terminal and having a second gate electrode coupled to a second clock input terminal, and a third transistor coupled between the first node and a first input terminal configured to receive the start pulse or an output signal of a previous stage of the stages, the third transistor having a third gate electrode coupled to the second clock input terminal. 1. A shift register comprising:a plurality of stages sequentially coupled to an input terminal configured to receive a start pulse, a first transistor coupled between a first clock input terminal and an output terminal and having a first gate electrode coupled to a first node;', 'a second transistor coupled between the output terminal and a power input terminal and having a second gate electrode coupled to a second clock input terminal; and', 'a third transistor coupled between the first node and a first input terminal configured to receive the start pulse or an output signal of a previous stage of the stages, the third transistor having a third gate electrode coupled to the second clock input terminal., 'wherein each of the plurality of stages comprises2. The shift register as claimed in claim 1 , wherein a first clock signal input into the first clock input terminal and a second clock signal input into the second clock input terminal are out of phase by a half clock cycle.3. The shift register as claimed in claim 1 , wherein each of the plurality of stages further comprises a first capacitor coupled between the first node and the output terminal.4. The shift register as claimed in claim 3 , wherein each of ...

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Номер записи: 88
27-08-2020 дата публикации

DISPLAY DEVICE AND DRIVING METHOD THEREOF

Номер: US20200273402A1
Автор: JUNG Mee Hye, LEE Cheol Gon, SEO Young Wan, Woo Min Kyu
Принадлежит:

A display device includes a plurality of pixels, each of the pixels including an organic light emitting diode and a plurality of transistors configured to control a current applied to the organic light emitting diode, wherein an aging frame includes an aging period in which at least one of the plurality of transistors is aged, wherein at least one of the plurality of transistors is in a turn-off state in the aging period, and wherein a potential difference between one electrode and an other electrode of a transistor of the plurality of transistors is equal to or greater than a reference potential difference, the reference potential difference being a difference value between a high level and a low level of a first power source voltage. 1. A display device comprising: an organic light emitting diode; and', 'a plurality of transistors configured to control a current applied to the organic light emitting diode,, 'a plurality of pixels, each of the pixels comprisingwherein an aging frame comprises an aging period in which at least one of the plurality of transistors is aged,wherein at least one of the plurality of transistors is in a turn-off state in the aging period, andwherein a potential difference between one electrode and an other electrode of a transistor of the plurality of transistors is equal to or greater than a reference potential difference, the reference potential difference being a difference value between a high level and a low level of a first power source voltage.2. The display device of claim 1 , wherein the plurality of transistors comprise:a first transistor comprising a gate electrode connected to a first node, an electrode connected to a first power source voltage line, and an other electrode connected to a second node;a second transistor comprising a gate electrode connected to a scan line, an electrode connected to the first node, and an other electrode connected to a third node; anda third transistor comprising a gate electrode connected to a ...

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Номер записи: 89
23-12-2021 дата публикации

WINDOW AND DISPLAY DEVICE INCLUDING THE SAME

Номер: US20210397222A1
Автор: AHN Hung Kun, JO JUNGKYU, LEE Jang Doo, Oh Hye-Jin, PARK Youngsang, SEO Inseok
Принадлежит:

A display device includes a display panel and a window disposed on the display panel. The window includes a base layer including a first surface and a second surface opposite to each other, a first inorganic layer disposed on the first surface of the base layer, a second inorganic layer contacting the second surface of the base layer, and a protective layer disposed either between the base layer and the first inorganic layer, or on a first portion of the first inorganic layer which is opposite to a second portion of the first inorganic layer facing the base layer. 1. A display device comprising:a display panel; and a base layer comprising a first surface and a second surface opposite to each other;', 'a first inorganic layer disposed on the first surface of the base layer;', 'a second inorganic layer contacting the second surface of the base layer; and', 'a protective layer disposed either between the base layer and the first inorganic layer, or on a first portion of the first inorganic layer which is opposite to a second portion of the first inorganic layer facing the base layer., 'a window disposed on the display panel, the window comprising2. The display device of claim 1 , wherein:the protective layer is disposed between the base layer and the first inorganic layer;the first inorganic layer comprises a plurality of layers; andthe first inorganic layer has a total thickness of about 10 nanometers or greater.3. The display device of claim 1 , wherein the protective layer is disposed between the base layer and the first inorganic layer claim 1 , andthe protective layer further comprises a protective film disposed on the first portion of the first inorganic layer, and an adhesive layer bonding the first inorganic layer and the protective film.4. The display device of claim 1 , wherein the protective layer is disposed between the base layer and the first inorganic layer claim 1 , andthe protective layer further comprises an anti-fingerprint layer disposed on the ...

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Номер записи: 90
27-10-2016 дата публикации

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Номер: US20160315226A1
Автор: Cho Dae Sung, Kim Kyoung Wan, Seo Won Cheol, Ye Kyung Hee, Yoon Yeo Jin
Принадлежит:

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. 133-. (canceled)34. A light emitting diode , comprising:a substrate;a first conductive type semiconductor layer arranged on the substrate;a mesa arranged on the first conductive type semiconductor layer and comprising a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;a transparent electrode disposed on and in contact with the second conductive type semiconductor layer;a first electrode pad electrically connected to the first conductive type semiconductor layer;an insulation layer covering the transparent electrode layer and an upper surface and side surfaces of the mesa, the insulation layer comprising an opening disposed above the transparent electrode layer;a second electrode pad disposed on the insulation layer;an upper extension disposed on and contacting the transparent electrode layer; anda connector connecting the second electrode pad to the upper extension,wherein the side surfaces of the mesa have a degree of inclination in the range of 30-70 degrees relative to a plane of the substrate.35. The light emitting diode of claim 34 , wherein the ...

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Номер записи: 91
12-11-2015 дата публикации

DISPLAY PANEL

Номер: US20150325192A1
Автор: Kim Ji-Sun, Kim Jong Hee, KWON Yeong-Keun, LIM Jae Keun, SEO Young Wan, YOON Soo-Wan
Принадлежит:

A display device includes a display area including a gate line and a data line and a gate driver connected to an end of the gate line, the gate driver including at least one stages integrated on a substrate configured to output a gate voltage, in which the stage includes an inverter unit and an output unit, in which the output unit includes a first transistor and a first capacitor. The first transistor includes an input terminal applied with a clock signal, a control terminal connected to the node Q, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output. An inverter voltage output from the inverter is lower than the low voltage of the gate voltage output by the output unit. 1. A display device comprising:a display area comprising a gate line and a data line; anda gate driver connected to an end of the gate line, the gate driver comprising at least one stage integrated on a substrate and configured to output a gate voltage,wherein the stage comprises an output unit and a noise removal unit,wherein the output unit comprises a first transistor and a first capacitor,wherein the first transistor includes an input terminal applied with a clock signal, a control terminal connected to a first node, and an output terminal connected to a gate voltage output terminal through which the gate voltage is output,wherein a voltage of the first node is lower than the gate voltage output by the output unit, andwherein the noise removal unit comprises at least one transistor comprising a control terminal connected to a second node of a previous stage, an input terminal connected to the gate voltage output terminal, and an output terminal connected to a first low voltage.2. The display device of claim 1 , wherein the stage comprises an inverter unit comprising at least two transistors connected to the second node.3. The display device of claim 2 , wherein the noise removal unit further comprises at least a first transistor pair claim ...

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Номер записи: 92
17-11-2016 дата публикации

QUANTUM PLATELET CONVERTER

Номер: US20160336492A1
Автор: An Ji Hye, Seo Won Cheol, Stott Nathan
Принадлежит:

In one aspect a light emitting device includes a light emitting diode (LED) chip, and an encapsulant covering the LED chip. The encapsulant is embedded with a downconverter. The downconverter includes a quasi-two dimensional quantum nanoplatelet structure. 1. A light emitting device , comprising:a light emitting diode (LED) chip that emits light of a first wavelength;an encapsulant disposed over the LED chip; andone or more downconverters embedded in the encapsulant,wherein each downconverter includes a quasi-two dimensional quantum nanoplatelet structure that interacts with the emitted light of the first wavelength from the LED chip to produce light of a second wavelength that is longer than the first wavelength.2. The light emitting device of claim 1 , wherein the downconverter is configured to down convert a blue light emitted by the LED chip to at least one of red claim 1 , yellow claim 1 , or green lights.3. The light emitting device of claim 1 , wherein the downconverter includes an on-chip downconverter that is formed as part of the LED chip.4. The light emitting device of claim 1 , wherein the downconverter includes a remote or separate downconverter.5. The light emitting device of claim 1 , wherein the quasi-two dimensional quantum nanoplatelet structure of the downconverter includes a core material covered by at least one shell layer.6. The light emitting device of claim 5 , wherein the quasi-two dimensional quantum nanoplatelet structure of the downconverter includes a nanosphere core covered by a nanoplatelet shell.7. The light emitting device of claim 5 , wherein the quasi-two dimensional quantum nanoplatelet structure of the downconverter includes a nanoplatelet core covered by a nanoplatelet shell.8. The light emitting device of claim 5 , wherein the quasi-two dimensional quantum nanoplatelet structure of the downconverter includes a nanorod core covered by a nanoplatelet shell.9. The light emitting device of claim 1 , wherein the quasi-two ...

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Номер записи: 93
26-11-2015 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Номер: US20150340579A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. 151-. (canceled)52. A light emitting diode (LED) package , comprising:a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer;a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected to the first conductive type semiconductor layer via some of the plurality of contact holes;a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically connected to the second conductive type semiconductor layer; anda protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive type semiconductor layer,wherein the protective insulation layer includes insulation layers having different indices of refraction ...

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Номер записи: 94
24-10-2019 дата публикации

Synthetic wood

Номер: US20190322001A1
Автор: In-hui CHOI, Tae-Young Kim, Won-Jae Yoon, Yong-Seok Seo
Принадлежит: SK Chemicals Co Ltd

Provided are a synthetic wood and a preparation method thereof. More particularly, provided are a synthetic wood having excellent flexural property and impact strength by including a polyester resin having excellent compatibility with wood flour, and a preparation method thereof.

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Номер записи: 95
08-10-2020 дата публикации

Transfer method using deformable film

Номер: US20200321234A1
Автор: Chan Soo Shin, CHANG WAN KIM, Hyeong Ho Park, Je Hyuk CHOI, Shin Keun Kim
Принадлежит: Lc Square Co Ltd

A transfer method of transferring an object to a target substrate by using a deformable film is provided. The method includes: a first process of forming an object on a source substrate, a second process of placing a deformable film on the source substrate on which the object is formed, a third process of embedding the object into the deformable film, a fourth process of separating an object, which is to be transferred, from the source substrate, integrating the transfer object in or on a surface of the deformable film, and separating deformable film, in which the transfer object is integrated, from the source substrate, and a fifth process of transferring the object integrated into the deformable film to a target substrate.

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Номер записи: 96
24-11-2016 дата публикации

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20160343922A1
Автор: Kim Chang Youn, Kim Hwa Mok, KIM Jong Kyu, LEE Jang Woo, Lee Joon Hee, Seo Won Cheol, SHIN Jin Cheol, Yoon Yeo Jin, YOU Jong Kyun
Принадлежит:

Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. 1. A light emitting device , comprising:a substrate;a first metal layer disposed on the substrate;a second metal layer disposed on the first metal layer;a third metal layer disposed on the second metal layer;a first insulating layer comprising first openings;a second insulating layer comprising second openings; andlight emitting cells disposed on the first insulating layer and the second insulating layer and electrically connected to the first, second, and third metal layers via the first openings and the second openings.2. The light emitting device of claim 1 , wherein the first insulating layer and the second insulating layer contact each other.3. The light emitting device of claim 2 , wherein the light emitting cells each comprise a first semiconductor layer claim 2 , a second semiconductor layer claim 2 , and an active layer disposed between the first semiconductor layer and the second semiconductor layer claim 2 , andthe first insulating layer contacts each of the first semiconductor layer, the second semiconductor layer, and the active layer.4. The light emitting device of claim 3 , further comprising a fourth metal layer electrically connected to the second and third metal layers.5. The light emitting device of claim 4 , wherein the first insulating layer contacts the fourth metal layer.6. The light emitting device of claim 5 , wherein the second metal layer is continuously disposed to extend along the substrate under at least two ...

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Номер записи: 97
22-10-2020 дата публикации

IMAGE PROCESSING METHOD FOR AUTONOMOUS DRIVING AND APPARATUS THEREOF

Номер: US20200333796A1
Автор: CHO Baek Hwan, JEON Paul Barom, SEO Young Wan
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A processor implemented image processing method includes recognizing a target object in a first frame of an input image; adjusting an exposure of a second frame of the input image based on a brightness of the target object; and generating a synthesized image by synthesizing the first frame and the second frame. 1. A processor implemented image processing method , comprising:recognizing a road in a first frame of an input image;setting a region on the road as a recognition region;scanning the recognition region instead of scanning an entire region of the input image;recognizing at least one target object in the recognition region in the input image; andadjusting an exposure of a second frame of the input image.2. The method of claim 1 , wherein the adjusting the exposure of the second frame of the input image is based on a brightness of the target object.3. The method of claim 2 , wherein the adjusting the exposure of the second frame of the input image is based on a difference between the brightness of the target object and a brightness of a remaining region not including the target object.4. The method of claim 3 , wherein the adjusting the exposure of the second frame of the input image comprises comparing the difference with a predetermined threshold.5. The method of claim 1 , wherein the recognizing the at least one target object comprises recognizing the at least one target object based on position information of a vehicle.6. The method of claim 1 , further comprises generating a synthesized image by synthesizing the first frame and the second frame.7. The method of claim 1 , wherein the at least one target object comprise any one or any combination of two or more of a tunnel entrance claim 1 , a tunnel exit claim 1 , and a light of a vehicle.8. The method of claim 2 , wherein the adjusting of the exposure of the second frame comprises:decreasing the exposure of the second frame in response to the brightness of the target object being greater than a brightness ...

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Номер записи: 98
07-11-2019 дата публикации

Foldable display device

Номер: US20190339741A1
Автор: Myoung Seo Park
Принадлежит: Samsung Display Co Ltd

A foldable display device is provided. The foldable display device may comprise a lower module, a display module on the lower module, a functional module on the display module, and a window module on the functional module. The display module may include a main region having a display area. The display module may include a lower inorganic encapsulation structure and an upper inorganic encapsulation structure directly contacting each other to form an inorganic-inorganic contact closed loop that substantially surrounds the display area in a plan view. The upper inorganic encapsulation structure may include at least three layers. Both of the upper inorganic encapsulation structure and the window module may be flexible.

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Номер записи: 99
15-12-2016 дата публикации

WAFER-LEVEL LIGHT EMITTING DIODE AND WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE

Номер: US20160365382A1
Автор: Cho Dae Sung, Seo Won Cheol
Принадлежит:

A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter. 1. A light-emitting diode (LED) , comprising:a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer;a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer;a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second semiconductor layer;a first insulation layer disposed on the first side of the semiconductor stack and covering a side surface of the first bump; anda wavelength converter disposed on a second side of the semiconductor stack,wherein the wavelength converter laterally extends beyond the semiconductor stack, and is wherein the first insulation layer comprises a ...

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Номер записи: 100