GALLIUM NITRIDE MATERIALEN AND PROCEEDING FOR THE PRODUCTION OF LAYERS THESE MATERIALEN

Methods of forming a plurality of semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Verfahren und Anordnung zum rückwirkungsfreien Übermitteln von Informationen

Die Erfindung betrifft ein Verfahren zum rückwirkungsfreien Übermitteln von Informationen, insbesondere Diagnoseinformationen, von wenigstens einem Teilnehmer eines sicherheitskritischen Netzwerks (3) in ein nicht sicherheitskritisches Netzwerk (4). Um eine eisenbahntechnische Anlage kostengünstiger zu gestalten, ist es erfindungsgemäß vorgesehen, dass die Informationen von dem Teilnehmer (9) in das sicherheitskritische Netzwerk eingespeist werden und bei dem die Informationen von einer mit dem sicherheitskritischen Netzwerk (3) verbundenen Leseeinrichtung (7) rückwirkungsfrei gelesen und in das nicht sicherheitskritische Netzwerk (4) eingespeist werden. Die Erfindung betrifft weiterhin eine Anordnung zum rückwirkungsfreien Übermitteln von Informationen. The invention relates to a method for the feedback-free transmission of information, in particular diagnostic information, from at least one subscriber of a safety-critical network (3) to a non-safety-critical network (4). In order to make a railway technical installation more cost-effective, it is provided according to the invention that the information from the subscriber (9) are fed into the safety-critical network and in which the information read from a with the safety-critical network (3) reading device (7) without feedback and into the non-safety-critical network (4) are fed. The invention further relates to an arrangement for the feedback-free transmission of information.

Verfahren und System zum akustischen Analysieren eines Stellwerkraums

Offenbart ist ein Verfahren zum akustischen Analysieren eines Stellwerkraums, in welchem zumindest ein elektromechanisches Bauelement angeordnet ist, wobei akustische Messdaten von mindestens einem Schaltvorgang des mindestens einen elektromechanischen Bauelements durch mindestens einen Schallaufnehmer aufgezeichnet werden, wobei die Messdaten mit Referenzdaten verglichen werden und wobei anhand des Vergleichs eine Funktion des elektromechanischen Bauelements beurteilt wird. Des Weiteren ist ein System zum akustischen Analysieren des Stellwerkraums offenbart.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium ...

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

A gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide. A layer of 3C-silicon carbide is then epitaxially grown on the converted surface of the (111) silicon layer. A layer of 2H-gallium nitride then is grown on the epitaxially grown layer of 3C-silicon carbide. The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer. In one embodiment, the silicon layer is a (111) silicon substrate, the surface of which is converted to 3C-silicon carbide. In another embodiment, the (111) silicon layer is part of a Separation by IMplanted OXygen (SIMOX) silicon substrate which includes a layer of implanted oxygen that defines the (111) layer on the (111) silicon substrate. In yet another embodiment, the (111) silicon layer is a portion of a Silicon-On-Insulator (SOI) substrate in which a (111) silicon layer is bonded to a substrate. Lateral growth of the layer of 2H-gallium nitride ...

Gallium nitride material based semiconductor devices including thermally conductive regions

SOLID STATE LIGHTING DIES WITH QUANTUM EMITTERS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material. 1. A solid state lighting die , comprising:a substrate material; a first semiconductor element;', 'a second semiconductor element spaced apart from the first semiconductor element;', 'an active element directly between the first and second semiconductor elements, the active region including at least one of (a) indium gallium nitride single quantum well, (b) gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and (c) an InGaN bulk material; and, 'a plurality of emitters on the substrate material, the individual emitters includingan insulating material on the substrate material, the insulating material having a plurality of portions individually between adjacent emitters.2. The solid state lighting die of wherein:the substrate material includes a silicon wafer having a Si(1,1,1) crystal orientation at a surface;the solid state lighting die further includes a buffer material on the surface of the silicon wafer, the buffer material including at least one of aluminum nitride (AlN), gallium nitride (GaN), and zinc nitride (ZnN);the plurality of emitters are arranged in an array;the plurality of emitters are in direct contact with the buffer material;the plurality of emitters have a generally rectangular cross section with a length L and a width W;the length L is from about 10 nanometers to about 50 nanometers;the width W is from about 10 nanometers to about 50 nanometers;the first semiconductor element ...

PRODUCTION OF GALLIUM NITRIDE LAYERS OF MEANS LATERAL CRYSTAL GROWTH

PENDEOEPITAKTI GROWTH OF GALLIUM NITRIDE LAYERS ON SAPPHIRE SUBSTRATES

Gallium nitride materials and methods

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. However, prior to performing the laterally growing step, the sapphire substrate and/or the underlying gallium nitride layer is treated to prevent growth of gallium nitride from the trench floor from interfering with the lateral growth of the gallium nitride sidewalls of the at least one post into the at least one trench.

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls

FABRICATION OF GALLIUM NITRIDE SEMICONDUCTOR LAYERS BY LATERAL GROWTH FROM TRENCH SIDEWALLS

A sidewall (105) of an underlying gallium nitride layer (106) is laterally grown into a trench (107) in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer (108a). Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer. © KIPO & WIPO 2007 ...

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. However, prior to performing the laterally growing step, the sapphire substrate and/or the underlying gallium nitride layer is treated to prevent growth of gallium nitride from the trench floor from interfering with the lateral growth of the gallium nitride sidewalls of the at least one post into the at least one trench. Embodiments of gallium nitride semiconductor structures according to the present invention can include a sapphire substrate and an ...

Light emitting diodes and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Fabrication of gallium nitride layers by lateral growth

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

Method for forming a light conversion material

A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added.

Gallium Nitride Devices with Discontinuously Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 175-. (canceled)76. A semiconductor structure formed by a method comprising:{'sub': x', 'y', '(1-x-y), 'forming a discontinuously graded transition layer comprising an alloy of gallium nitride consisting of AlInGaN;'}forming a gallium nitride layer over said transition layer.77. The semiconductor structure of claim 76 , wherein a value of y of said transition layer is selected from the group consisting of zero and substantially zero.78. The semiconductor structure of claim 76 , wherein a value of 1-x-y at a front surface of said transition layer is greater than a value of 1-x-y at a back surface of said transition layer.79. A semiconductor structure comprising:a substrate;an intermediate layer comprising a first aluminum nitride alloy formed above said substrate, said first aluminum nitride alloy being substantially free of gallium;a transition layer including at least one compositionally-graded layer;a gallium nitride layer formed over said transition layer.80. The semiconductor structure of wherein said intermediate layer comprises a second aluminum nitride alloy situated between said first aluminum nitride alloy and said ...

Semiconductor structure with compositionally-graded transition layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Pendeoepitaxial growth of gallium nitride layers on sapphire substrates

Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

Light emitting diodes and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light. 1. A method for fabricating a semiconductor device , comprising:forming an engineered substrate;at least approximately matching a lattice parameter of the engineered substrate to a lattice parameter of a semiconductor material; andgrowing the semiconductor material on the engineered substrate.2. The method of wherein the engineered substrate includes a plurality of materials claim 1 , and wherein matching the lattice parameter of the engineered substrate to the lattice parameter of the semiconductor material includes miscutting at least one of the materials of the engineered substrate.3. The method of wherein an angle of miscut is from about 2 degrees to about 5 degrees.4. The method of claim 1 , further comprising pre-straining at least one of the materials of the engineered substrate.5. The method of wherein pre-straining includes bonding at least one of the plurality of materials of the engineered substrate to another of the plurality of materials of the engineered substrate at an elevated temperature followed by cooling the engineered substrate.6. A method for fabricating solid state transducers claim 4 , comprising:forming an engineered substrate having a first material and a second material;forming a pattern in the second material, the ...

Light emitting diodes and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Method for controlling and monitoring of railway operating processes using European train control system, involves processing operation center data that includes vehicle-specific data, where latter data is reported to operation center

The method involves processing operation center data that includes a vehicle-specific data of a vehicle. The vehicle-specific data is reported to the operation center by a radio system. The vehicle-specific data is read from a vehicle-side memory. The vehicle-specific data is transmitted from the vehicles to the operating center by a communication unit. An independent claim is also included for a device for controlling and monitoring of railway operating processes.

Fabrication of gallium nitride layers on silicon

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes (LEDs) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Gallium nitride devices with discontinuously graded transition layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby

Semiconductor growth substrates and associated systems and methods for die singulation

Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Verfahren zur Fehleroffenbarung bei einem Stellwerksrechnersystem und Stellwerksrechnersystem

Die Erfindung betrifft ein Verfahren zur Fehleroffenbarung bei einem Stellwerksrechnersystem mit einem Bedienkanal (1), dessen Eingangssignale signaltechnisch sichere Zustandsmeldungen einer Eisenbahnsicherungsanlage (3) repräsentieren und dessen Ausgangssignale zur Bedienung mindestens eines Elementes, beispielsweise eines Lichtsignals, der Eisenbahnsicherungsanlage (3) ausgebildet sind und auf einem Display (5) visualisiert werden sowie ein Stellwerksrechnersystem zur Durchführung des Verfahrens. Um unnötige Pixelauswertungen des Displays (5) zu vermeiden, ist vorgesehen, dass bei Einleitung der Bedienung des Elementes optisch kodierte, insbesondere QR Quick Response kodierte, elementspezifische Pixeldaten des Displays (5) gelesen und mit elementspezifischen Daten eines Prozessabbildes (12) der signaltechnisch sicheren Zustandsmeldungen verglichen werden.

METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SUBSTRATES INCLUDING NON-GALLIUM NITRIDE POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000 °C or less and the second temperature preferably is about 1100°C or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride ...

Light emitting devices with built-in chromaticity conversion and methods of manufacturing

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Verfahren zur Hilfsbedienung eines Fahrwegelements sowie betriebsleittechnisches System

Die Erfindung betrifft ein eine besonders hohe betriebliche Sicherheit aufweisendes Verfahren zur Hilfsbedienung eines Fahrwegelements (100, 110). Hierzu läuft das Verfahren erfindungsgemäß derart ab, dass durch ein betriebsleittechnisches System (130) auf zumindest ein spurgebundenes Fahrzeug (10) bezogene Fahrdaten von einer Steuereinrichtung (60) eines Zugbeeinflussungssystems empfangen werden und die empfangenen Fahrdaten von dem betriebsleittechnischen System (130) im Rahmen einer Hilfsbedienung des Fahrwegelements (100, 110) berücksichtigt werden. Die Erfindung betrifft des Weiteren ein betriebsleittechnisches System (130). The invention relates to a particularly high operational safety exhibiting method for auxiliary operation of a track element (100, 110). For this purpose, the method according to the invention proceeds in such a way that driving data received by at least one tracked vehicle (10) is received by a control device (60) of a train control system and the received driving data from the operational control system (130) as part of a train control system Auxiliary operation of the track element (100, 110) are taken into account. The invention further relates to an operational control system (130).

Eisenbahnanlage mit Messeinrichtung

Die Erfindung bezieht sich auf ein Verfahren zum Betreiben einer Eisenbahnanlage (10), wobei bei dem Verfahren mit zumindest einem Anlagensensor (AS) ein die Eisenbahnanlage (10) betreffender Anlagenmesswert (Ma) gemessen wird und die Eisenbahnanlage (10) unter Heranziehung des Messwerts betrieben wird.Erfindungsgemäß ist vorgesehen, dass mit zumindest einem Umgebungssensor (US) ein Umgebungsmesswert (Mu) gemessen wird, der einen Umgebungseinfluss auf den Anlagensensor (AS) angibt, der Anlagenmesswert (Ma) unter Heranziehung des Umgebungsmesswerts (Mu) unter Bildung eines korrigierten Anlagenmesswerts (Mk) korrigiert wird und die Eisenbahnanlage (10) unter Heranziehung des korrigierten Anlagenmesswerts (Mk) betrieben wird.

PENDEOEPITAXIAL GROWTH OF GALLIUM NITRIDE LAYERS ON SAPPHIRE SUBSTRATES

Gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer (104) on a sapphire substrate (102a), to define at least one post (106) in the underlying gallium nitride layer and at least one trench (107) in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall (105). The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. In a preferred embodiment, the at least one trench extends into the sapphire substrate such that the at least one post further includes a sapphire sidewall an a sapphire floor. A mask (201) may be included on the sapphire floor and an alluminum nitride buffer layer (102b) also may be included between the sapphire substrate and the underlying gallium nitride layer. A mask (209) also may be included on the gallium nitride top. The mask on ...

Gallium nitride materials including thermally conductive regions

The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium ...

PENDEOEPITAXIAL METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LAYER ON SAPPHIRE SUBSTRATE AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE MANUFACTURED BY THE METHOD

PROBLEM TO BE SOLVED: To manufacture a gallium nitride device of low cost and/or having high availability. SOLUTION: A gallium nitride semiconductor layer is manufactured by etching a gallium nitride layer of an underlying layer on a sapphire substrate to define at least one pillar or one groove in the underlying gallium nitride layer. At least one pillar includes a gallium nitride top portion and a gallium nitride side wall. At least one groove includes a sapphire bottom portion. The gallium nitride side wall is grown in a lateral direction in at least one groove to form a gallium nitride semiconductor layer. Before performing a lateral growth process, in order to prevent the growth of gallium nitride from a groove bottom from interfering with the lateral growth into at least one groove of the gallium nitride side wall of at least one pillar of growing, the sapphire bottom portion and the gallium nitride top portion are masked. COPYRIGHT: (C)2003,JPO ...

Gallium nitride devices with gallium nitride alloy intermediate layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium ...

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Gallium nitride materials and methods

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

FABRICATION OF GALLIUM NITRIDE LAYERS BY LATERAL GROWTH

An underlying gallium nitride layer (104) on a silicon carbide substrate (102) patterned with a mask (109) that includes an array of openings therein, and is etched through the array of openings to define posts (106) in the underlying gallium nitride layer and trenches (107) therebetween. The posts each include a sidewall (105) and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer (108a). During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically ...

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a respective semiconductor layer on each of the selective growth regions. The first substrate is then divided into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers. This dividing step is preferably performed by partitioning (e.g., dicing) the first substrate at the spaces between the selective growth regions. The step of forming a plurality of semiconductor layers preferably comprises growing a respective compound semiconductor layer (e.g., gallium nitride layer) on each of the selective growth regions. The growing step may comprise pendeoepitaxially growing a respective gallium nitride layer on each of the selective growth regions. Each of the selective growth ...

Engineered substrates for semiconductor devices and associated systems and methods

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Pendeoepitaxial growth of gallium nitride layers on sapphire substrates

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through ...

PENDEOEPITAXIAL METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LAYER ON SAPPHIRE SUBSTRATE, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE MANUFACTURED BY THE SAME

PROBLEM TO BE SOLVED: To manufacture an inexpensive and/or highly obtainable gallium nitride device. SOLUTION: A gallium nitride semiconductor layer is manufacturing by providing at least one column and at least one groove in a lower gallium nitride layer formed on a sapphire substrate by etching the gallium nitride layer. At least one column thus formed contains a gallium nitride top section and gallium nitride sidewalls. At least one groove thus formed contains a sapphire bottom. The gallium nitride side walls are grown laterally into the formed at least one groove, by which the gallium nitride semiconductor layer is formed. Before conducting the step of lateral growing of the sidewalls, the sapphire bottom is masked for preventing the growth of the gallium nitride from the bottom of the groove from interfering with the lateral growth of the sidewalls of at least one column thus formed into at least one groove thus formed. COPYRIGHT: (C)2003,JPO ...

III-nitride based semiconductor structure

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Gallium nitride semiconductor structures with compositionally-graded transition layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through ...

GALLIUM NITRID MATERIALEN UND VERFAHREN ZUR HERSTELLUNG VON SCHICHTEN DIESER MATERIALEN

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

A gallium nitride layer is pendeoepitaxially grown on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts. Thus, upon cooling, at least some of the weak posts crack, to thereby relieve stress in the gallium nitride semiconductor layer. Accordingly, low defect density gallium nitride semiconductor layers may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer. The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. By staggering the posts, later fracturing may be promoted compared to long unstaggered posts. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative ...

Solid state lighting devices with cellular arrays and associated methods of manufacturing

Solid state lighting (SSL) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Gallium nitride based high-electron mobility devices

A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Timetable generation and modification method in which a text field or notepad is used to input script type commands that are then converted to graphical or tabular output formats

Timetable generation and modification method in which a text field or notepad is used by an operator to input command sequences in a script language. The script language command sequences are converted into a computer graphical or textual representation, e.g. distance-time diagrams or tabular timetables.

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor. The gallium nitride sidewalls are laterally grown into the at least one trench, to thereby form a gallium nitride semiconductor layer. However, prior to performing the laterally growing step, the sapphire substrate and/or the underlying gallium nitride layer is treated to prevent growth of gallium nitride from the trench floor from interfering with the lateral growth of the gallium nitride sidewalls of the at least one post into the at least one trench. Embodiments of gallium nitride semiconductor structures according to the present invention can include a sapphire substrate and an ...

Solid state lighting devices with cellular arrays and associated methods of manufacturing

Solid state lighting (SSL) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

HERSTELLUNG VON GALLIUMNITRID-SCHICHTEN MITTELS LATERALEM KRISTALLWACHSTUM

Light emitting diodes with N-polarity and associated methods of manufacturing

Light emitting diodes (''LEDs'') with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Embodiments of the present invention pendeoepitaxially grow sidewalls of posts in an underlying gallium nitride layer that itself is on a sapphire substrate, at high temperatures between about 1000° C. and about 1100° C. and preferably at about 1100° to reduce vertical growth of gallium nitride on the trench floor from interfering with the pendeoepitaxial growth of the gallium nitride sidewalls of the posts. Thus, widely available sapphire substrates may be used for pendeoepitaxial of gallium nitride, to thereby allow reduced cost and/or wider applications for gallium nitride devices. More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer. The at least one post includes a gallium nitride top and a gallium nitride sidewall. The at least one trench includes a trench floor ...

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. 1. A method for manufacturing a light emitting device , comprising:forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission via electroluminescence;determining a conversion characteristic of a second emission based on a target chromaticity and the first emission such that a combination of the first and second emissions at least approximates the target chromaticity;selecting a conversion material based on the determined conversion characteristic; andforming the conversion material on the second semiconductor material via at least one of metal organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, hydride vapor phase epitaxy, and ion implantation.2. The method of wherein:{'sub': 2', '3, 'forming the first semiconductor material, the active region, and the second semiconductor material includes forming an N-type gallium nitride (GaN) material, at least one of a bulk indium gallium nitride (InGaN) material, an InGaN single quantum well (“SQW”), and GaN/InGaN multiple quantum wells (“MQWs”), and a P ...

Gallium nitride materials including thermally conductive regions

The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute beat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 175-. (canceled)76. A semiconductor structure comprising:{'sub': x', 'y', '(1-x-y), 'a transition layer comprising an alloy of gallium nitride consisting of AlInGaN;'}a gallium nitride layer over said transition layer;wherein said transition layer is discontinuously graded.77. The semiconductor structure of claim 76 , wherein a value of y of said transition layer is selected from the group consisting of zero and substantially zero.78. The semiconductor structure of claim 76 , wherein said discontinuously graded transition layer is step-wise graded.79. The semiconductor structure of claim 76 , wherein a value of 1-x-y at a front surface of said transition layer is greater than a value of 1-x-y at a back surface of said transition layer.80. The semiconductor structure of claim 76 , wherein a composition of said gallium nitride layer at a bottom surface thereof is different from a composition of said transition layer at a front surface thereof.81. The semiconductor structure of claim 76 , wherein a gallium percentage in said gallium nitride layer at a bottom surface thereof is different from a gallium percentage of said ...

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a respective semiconductor layer on each of the selective growth regions. The first substrate is then divided into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers. This dividing step is preferably performed by partitioning (e.g., dicing) the first substrate at the spaces between the selective growth regions. The step of forming a plurality of semiconductor layers preferably comprises growing a respective compound semiconductor layer (e.g., gallium nitride layer) on each of the selective growth regions. The growing step may comprise pendeoepitaxially growing a respective gallium nitride layer on each of the selective growth regions. Each of the selective growth ...

Semiconductor growth substrates and associated systems and methods for die singulation

Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.

Light emitting diodes with n-polarity and associated methods of manufacturing

Gallium nitride materials and methods

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Conductive structures, wordlines and transistors

Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. 16-. (canceled)7. A solid state lighting device , comprising:a plurality of hemispherical grained silicon (HSG) structures positioned on a substrate surface;a single-crystal semiconductor material positioned on the substrate surface and the plurality of HSG structures; andan active region proximate the single-crystal semiconductor material, the active region including gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells.81. The solid state lighting device of claim wherein the substrate surface is a generally-planar surface.91. The solid state lighting device of claim wherein the individual HSG structure includes a base proximate the substrate surface , an apex spaced apart from the base , and a side surface between the base and the apex.10. The solid state lighting device of wherein the side surface includes a hemispherical surface.111. The solid state lighting device of claim wherein the single-crystal semiconductor material substantially encapsulates the plurality of HSG structures.121. The solid state lighting device of claim wherein the plurality of HSG structures are arranged as an array.13. The solid state lighting device of wherein the array has a pitch claim 12 , and wherein the pitch is determined based on a desired dislocation density of the single-crystal semiconductor material.14. The solid state lighting device of wherein the plurality of HSG structures includes multiple bases claim 12 , and wherein the adjacent bases are spaced apart from one another ...

Engineered substrates for semiconductor devices and associated systems and methods

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Gallium Nitride Devices With Aluminum Nitride Intermediate Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 155-. (canceled)56. A semiconductor structure comprising:a substrate;an intermediate layer comprising aluminum nitride formed above said substrate;a transition layer including at least one compositionally-graded layer and a superlattice;a gallium nitride layer formed over said transition layer.57. The semiconductor structure of wherein said intermediate layer comprises an aluminum nitride alloy situated between said aluminum nitride and said substrate.58. The semiconductor structure of wherein said at least one compositionally-graded layer is graded discontinuously across the thickness of the layer.59. The semiconductor structure of wherein said transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 56 , InGaN claim 56 , and AlGaN.60. The semiconductor structure of wherein a concentration of gallium in said transition layer is graded.61. The semiconductor structure of wherein x is varied from a first value at a back surface of said transition layer to a second value at a front surface of said transition layer.62. The semiconductor structure of wherein y is varied from a ...

SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

GALLIUM NITRIDE MATERIALS AND METHODS

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 1. A method of producing a semiconductor material comprising:forming a compositionally-graded transition layer over a silicon substrate; andforming a gallium nitride material layer over the transition layer.2. The method of claim 1 , wherein the composition of the transition layer is graded continuously across the thickness of the layer.3. The method of claim 1 , wherein the transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 1 , InGaN claim 1 , and AlGaN.4. The method of claim 1 , wherein the concentration of gallium in the transition layer is graded.5. The method of claim 3 , wherein the value of x decreases in a direction away from the silicon substrate.6. The method of claim 3 , wherein the transition layer comprises AlGaN.7. The method of claim 1 , wherein the transition layer comprises a superlattice including a series of alternating AlInGaN/AlInGaN layers.8. The method of claim 1 , wherein the gallium nitride material layer comprises GaN.9. The method of claim 1 , wherein the gallium nitride material layer comprises AlInGaN.10. The method of claim 1 , further ...

METHOD FOR FORMING A LIGHT CONVERSION MATERIAL

A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added.

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Gallium nitride materials and methods

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 1. A method of producing a semiconductor material comprising:forming a compositionally-graded transition layer over a silicon substrate; andforming a gallium nitride material layer over the transition layer.2. The method of claim 1 , wherein the composition of the transition layer is graded continuously across the thickness of the layer.3. The method of claim 1 , wherein the transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 1 , InGaN claim 1 , and AlGaN.4. The method of claim 1 , wherein the concentration of gallium in the transition layer is graded.5. The method of claim 3 , wherein the value of x decreases in a direction away from the silicon substrate.6. The method of claim 3 , wherein the transition layer comprises AlGaN.7. The method of claim 1 , wherein the transition layer comprises a superlattice including a series of alternating AlInGaN/AlInGaN layers.8. The method of claim 1 , wherein the gallium nitride material layer comprises GaN.9. The method of claim 1 , wherein the gallium nitride material layer comprises AlInGaN.10. The method of claim 1 , further ...

Gallium nitride devices with aluminum nitride alloy intermediate layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting (SSL) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

GALLIUM NITRIDE MATERIALS AND METHODS

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Light emitting devices with built-in chromaticity conversion and methods of manufacturing

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium ...

Method of manufacturing an adaptive AIGaN buffer layer

A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

Solid state lighting devices without converter materials and associated methods of manufacturing

Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)16. A semiconductor structure comprising:a transition layer over a silicon substrate;a gallium nitride material layer over said transition layer;wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said gallium nitride material layer at a bottom surface thereof.17. The semiconductor structure of claim 16 , wherein said composition is graded continuously across a thickness of said transition layer.18. The semiconductor structure of claim 16 , wherein said transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 16 , InGaN claim 16 , and AlGaN.19. The semiconductor structure of claim 16 , wherein a concentration of gallium in said transition layer is graded.20. The semiconductor structure of claim 18 , wherein x decreases in a direction away from said silicon substrate.21. The semiconductor structure of claim 16 , wherein said transition layer comprises AlGaN.22. The semiconductor structure of claim 16 , wherein said transition layer comprises a superlattice including a series of alternating AlInGaN/ ...

Engineered substrates for semiconductor devices and associated systems and methods

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Gallium Nitride Devices with Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of o semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)1635-. (canceled)36. A semiconductor device comprising:a transition layer;a III-nitride layer over said transition layer;wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said III-nitride layer at a bottom surface thereof.37. The semiconductor device of claim 36 , wherein said transition layer is situated over a substrate.38. The semiconductor device of claim 37 , wherein said substrate comprises silicon.39. The semiconductor device of claim 37 , wherein said substrate consists of only silicon.40. The semiconductor device of claim 36 , wherein said III-nitride layer comprises gallium nitride.41. The semiconductor device of claim 36 , wherein said III-nitride layer consists of only gallium nitride.42. The semiconductor device of claim 36 , wherein said composition is graded continuously across said transition layer.43. The semiconductor device of claim 36 , wherein said transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 36 , InGaN claim 36 , and AlGaN.44. The semiconductor device of claim 40 , ...

METHOD FOR FORMING A LIGHT CONVERSION MATERIAL

A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added. 1. A light emitting diode (LED) assembly , comprising:an LED;a cover over the LED, wherein the cover comprises a material having a desired transparency to light, wherein the cover has an exposed surface;a conversion coating embedded in the cover; andan encapsulant encasing the conversion coating, the cover and the LED.2. The assembly of wherein the cover comprises silicone claim 1 , the exposed surface is spaced apart from the LED and the conversion coating comprises a phosphor layer at the surface of the exposed surface spaced apart from the LED.3. The assembly of wherein at least a portion of the surface of the cover has a partially spherical shape and the phosphor layer conforms uniformly to partially spherical shape.4. The assembly of claim 1 , wherein the cover is a first cover and the conversion coating is a first conversion coating claim 1 , and wherein the system further comprises a second cover over the first conversion coating and a second conversion coating on the second cover.5. The assembly of wherein the first conversion coating emits light at a first frequency and the second conversion coating emits light at a second frequency different than the first frequency.6. The assembly of wherein the first cover has a partially spherical shape and the second cover has a spherical shape concentric with the first cover.7. The assembly of wherein the first conversion coating comprises a first phosphor and the second conversion coating comprises a second phosphor different than the first phosphor.8. ...

SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION

Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street. 1. A method for manufacturing LEDs , comprising:applying an aluminum nitride seed material to a growth substrate to form multiple LED growth regions with a dicing street between neighboring growth regions;at the dicing street, removing portions of the seed material to expose the growth substrate, leaving spaced-apart dummy structures at the dicing street; adding a first portion of gallium nitride to the growth regions; and', 'adding a second portion of gallium nitride to the spaced-apart structures, wherein the second portion of the gallium nitride would otherwise be disposed at the device growth regions in the absence of the spaced-apart structures;, 'epitaxially growing gallium nitride on the aluminum nitride seed material byforming LEDs with the gallium nitride at the growth regions; andseparating the LEDs from each at the dicing street by removing the dummy structures and the underlying growth substrate at the dicing street.2. The method of wherein forming the spaced-apart structures includes forming a first structure closest to one of the growth regions claim 1 , and wherein the first structure is spaced apart from the one growth region by a distance of from about 5 ...

Solid state lighting devices without converter materials and associated methods of manufacturing

Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 155-. (canceled)56. A semiconductor structure comprising:a substrate;an intermediate layer comprising a first aluminum nitride alloy formed above said substrate;a transition layer including at least one compositionally-graded layer and a superlattice;a gallium nitride layer formed over said transition layer.57. The semiconductor structure of wherein said intermediate layer comprises a second aluminum nitride alloy situated between said first aluminum nitride alloy and said substrate.58. The semiconductor structure of wherein said at least one compositionally-graded layer is graded discontinuously across the thickness of the layer.59. The semiconductor structure of wherein said transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 56 , InGaN claim 56 , and AlGaN.60. The semiconductor structure of wherein a concentration of gallium in said transition layer is graded.61. The semiconductor structure of wherein x is varied from a first value at a back surface of said transition layer to a second value at a front surface of said transition layer.62. The semiconductor structure ...

Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)16. A semiconductor structure comprising:a transition layer over a silicon substrate;a gallium nitride material layer over said transition layer;wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said gallium nitride material layer at a bottom surface thereof.17. The semiconductor structure of claim 16 , wherein said composition is graded continuously across a thickness of said transition layer.18. The semiconductor structure of claim 16 , wherein said transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 16 , InGaN claim 16 , and AlGaN.19. The semiconductor structure of claim 16 , wherein a concentration of gallium in said transition layer is graded.20. The semiconductor structure of claim 18 , wherein x decreases in a direction away from said silicon substrate.21. The semiconductor structure of claim 16 , wherein said transition layer comprises AlGaN.22. The semiconductor structure of claim 16 , wherein said transition layer comprises a superlattice including a series of alternating AlInGaN/ ...

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. 19-. (canceled)10. A method for manufacturing a light emitting device , the method comprising:forming a first semiconductor material, a second semiconductor material, and an active region therebetween, wherein the active region is configured to produce a first emission via electroluminescence;forming a conversion material on the second semiconductor material, wherein the conversion material is configured to produce a second emission by photoluminescence; andforming laterally spaced apart gaps in the conversion material, wherein forming the gaps changes the second emission at different areas of the conversion material such that the light emitting device, in operation, produces light having different chromaticity values at the different areas of the conversion material.11. The method of claim 10 , further comprising filling the gaps with transparent or semitransparent material.12. The method of claim 10 , further comprising filling the gaps with gaseous material.13. The method of claim 10 , further comprising filling the gaps with liquid material.14. The method of wherein forming gaps in the conversion material includes forming channels in the conversion ...

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. 1. A light emitting diode (LED) , comprising:a substrate;a semiconductor material carried by the substrate, the semiconductor material having a first surface proximate to the substrate and a second surface opposite the first surface, the second surface of the semiconductor material being generally non-planar; andan active region proximate to the semiconductor material, the active region generally conforming to the non-planar second surface of the semiconductor material.2. The LED of wherein:the substrate includes a silicon wafer;the semiconductor material is a first semiconductor material containing an N-type gallium nitride (GaN);the non-planar second surface of the N-type GaN material includes a plurality of indentations, the individual indentations having an inverted pyramid shape with a hexagonal base, at least some of the pyramid shapes including six adjacent crystal planes of the N-type GaN material, the adjacent crystal planes extending into the N-type GaN material and being joined at an apex;the active region includes an indium gallium nitride (InGaN) material, at least a portion of the InGaN material being on the crystal planes of the N-type GaN material; andthe LED further includes a second semiconductor material containing a P-type GaN material.3. The LED of wherein:the substrate includes a silicon wafer;the semiconductor material contains a gallium nitride (GaN) material;the non-planar surface of ...

Semiconductor Material Having a Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)16. A semiconductor material , comprising:a compositionally-graded transition layer having a back surface and a top surface, the compositionally-graded transition layer comprising a gallium nitride alloy, wherein a gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface;an intermediate layer formed under the compositionally-graded transition layer; and{'sup': '2', 'a gallium nitride material layer formed over the compositionally-graded transition layer, the gallium nitride material layer having a crack level of less than 0.005 μm/μm.'}17. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded continuously across the thickness of the transition layer.18. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded discontinuously across the thickness of the transition layer.19. The semiconductor material of claim 16 , wherein the compositionally-graded transition layer comprises an alloy of gallium nitride selected from ...

Solid state lighting devices without converter materials and associated methods of manufacturing

Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. 1. A method for manufacturing a light emitting device , comprising:forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission via electroluminescence;determining a conversion characteristic of a second emission based on a target chromaticity and the first emission such that a combination of the first and second emissions at least approximates the target chromaticity;selecting a conversion material based on the determined conversion characteristic; andforming the conversion material on the second semiconductor material via at least one of metal organic chemical vapor deposition, molecular beam epitaxy, liquid phase epitaxy, hydride vapor phase epitaxy, and ion implantation.2. The method of wherein:the conversion material includes a superlattice structure; andselecting the conversion material includes selecting at least one of a thickness and a composition of the superlattice structure based on the determined conversion characteristic of the second emission.3. The method of wherein:the conversion material includes a ...

III-Nitride Semiconductor Structure with Intermediate and Transition Layers

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 192-. (canceled)93. A semiconductor structure comprising:a substrate;an intermediate layer over the substrate, wherein the intermediate layer comprises aluminum nitride, an aluminum nitride alloy, or a gallium nitride alloy;{'sub': x', 'y', '(1-x-y)', 'x', 'y', '(1-x-y), 'a transition layer over the intermediate layer, wherein the transition layer comprises two or more AlInGaN layers with different AlInGaN compositions, wherein 0≦x≦1 and 0≦y≦1;'}a gallium nitride layer over the transition layer.94. The semiconductor structure of claim 93 , wherein the substrate comprises a silicon substrate claim 93 , a silicon-on-insulator substrate claim 93 , a silicon-on-sapphire substrate claim 93 , or a SIMOX substrate.95. The semiconductor structure of claim 93 , wherein the two or more AlInGaN layers comprise at least one aluminum nitride layer.96. The semiconductor structure of claim 93 , wherein the two or more AlInGaN layers comprise at least one layer that is substantially free of gallium.97. The semiconductor structure of claim 93 , wherein the transition layer comprises two or more layers of gallium nitride alloy and two or more ...

Conductive structures, wordlines and transistors

Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION

Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street. 1. A semiconductor device , comprising:a substrate material;a plurality of semiconductor growth regions carried by the substrate material, with individual semiconductor growth regions having a first exposed surface;a dicing street between neighboring semiconductor growth regions;a plurality of spaced-apart structures in the dicing street, with individual spaced-apart structures having a second exposed surface, wherein a composition of the first exposed surface and the second exposed surface is the same.2. The device of claim 1 , further comprising a first quantity of semiconductor material grown at the semiconductor growth regions and a second quantity of semiconductor growth material grown at the dummy structures.3. The device of wherein the first quantity is disposed over the semiconductor growth regions to a generally uniform thickness.4. The device of wherein the growth regions include solid state transducers.5. The device of wherein the solid state transducers include LEDs.6. The device of wherein the growth regions include elements from Groups III and V of the periodic table of elements.7. The device of wherein the dummy structures include lines oriented generally ...

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. 1. A light emitting diode (LED) device , comprising:a substrate having a backside and a front side, wherein the front side is planar across the substrate; a first major surface that is planar across the substrate,', 'a second major surface opposite the first major surface and farther from the substrate than the first major surface,', 'indentations tapering inwardly from the second major surface toward the substrate to define non-planar areas having an irregular pattern of peaks and valleys, wherein at least some of the indentations have different depths into the first semiconductor material than others such that the irregular patter of peaks and valleys have an irregular pattern of heights and depths relative to each other; and, 'a first semiconductor material carried by the substrate, the first semiconductor material having—'}an active region operably connected to the first semiconductor material via the second major surface.2. The LED device of wherein the active region (1) directly contacts the first semiconductor material at the second major surface and (2) conforms to the indentation.3. The LED device of wherein the active region is epitaxially aligned with the semiconductor material.4. The LED device of wherein:the individual indentations have a hexagonal base; andthe individual indentations taper inwardly from the hexagonal base toward the substrate.5. The LED device of wherein:the individual ...

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. 1. A solid state lighting device , comprising:a substrate material having a substrate surface;a plurality of hemispherical grained silicon (HSG) structures on the substrate surface of the substrate material;a semiconductor material on the substrate material, at least a portion of the semiconductor material being between the plurality of HSG structures; andan active region proximate the semiconductor surface of the semiconductor material, the active region being configured to emit a light in response to an applied electrical voltage.2. The solid state lighting device of wherein the adjacent HSG structures are spaced apart from one another by a gap claim 1 , and wherein the portion of the semiconductor material generally completely fills the gaps.3. The solid state lighting device of wherein:the adjacent HSG structures are spaced apart from one another by a gap;a portion of the substrate surface is exposed through the individual gaps; andthe portion of the semiconductor material generally completely fills the gaps and is in direct contact with the exposed portion of the substrate surface through the individual gaps.4. The solid state lighting device of wherein:the HSG structures individually include a base proximate the substrate surface, an apex spaced apart from the base, and a side surface between the base and the apex;adjacent side surfaces are spaced apart from one another by a gap;the adjacent bases of the HSG structures are in direct contact with one another; anda portion of the ...

Conductive Structures, Wordlines and Transistors

Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

Semiconductor Structure with Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 175-. (canceled)76. A semiconductor structure formed by a method comprising:forming a compositionally-graded transition layer over a substrate;forming a gallium nitride material layer over the transition layer;wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said gallium nitride material layer at a bottom surface thereof.77. The semiconductor structure of claim 76 , wherein the composition of the transition layer is graded continuously across the thickness of the layer.78. The semiconductor structure of claim 76 , wherein the transition layer comprises an alloy of gallium nitride selected from the group consisting of AlInGaN claim 76 , InGaN claim 76 , and AlGaN.79. The semiconductor structure of claim 76 , wherein the concentration of gallium in the transition layer is graded.80. The semiconductor structure of claim 78 , wherein the value of x decreases in a direction away from the substrate.81. The semiconductor structure of claim 76 , wherein the transition layer comprises AlGaN.82. The semiconductor structure of claim 76 , wherein the transition layer ...

SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING

Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. 1. A light emitting diode , comprising:a semiconductor material having a first surface and a second surface opposite the first surface; andan active region in direct contact with at least a part of the second surface of the semiconductor material, the active region including a first portion and a second portion, the first and second portions forming a non-planar three-dimensional structure.2. The light emitting diode of wherein the second surface of the semiconductor material is non-planar claim 1 , and wherein the active region generally conforms to the second surface of the semiconductor material.3. The light emitting diode of wherein the first and second portions of the active region are spaced apart by a third portion therebetween claim 1 , the first claim 1 , second claim 1 , and third portions forming a non-planar three-dimensional structure.4. The light emitting diode of wherein the first and second portions of the active region are spaced apart by a third portion therebetween claim 1 , the first claim 1 , second claim 1 , and third portions forming a non-planar three-dimensional structure claim 1 , and wherein at least one of the first claim 1 , second claim 1 , and third portions is at an angle of less than about 180° with respect to the other portions.5. The light emitting diode of wherein the first and second portions of the active region are spaced apart by a third portion therebetween ...

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. 1. A semiconductor device , comprising:a substrate including a substrate material; and a first semiconductor material directly on the surface of the substrate,', 'an active region on the first semiconductor material, and', 'a second semiconductor material on the active region; and, 'a light emitting diode includingwherein the substrate comprises a first region adjacent the surface having a higher concentration of nitrogen than a second region spaced apart from the surface, andwherein nitrogen (N) atoms in the first region are attached to the substrate material either by Van der Waals forces or by hydrogen bonds having an interaction energy of less than or equal to about 10.0 kcal/mol.2. The semiconductor device of claim 1 , wherein the first region does not include a nitrodizing product of the substrate material at an interface between the surface of the substrate and the first semiconductor material.3. The semiconductor device of wherein:the substrate includes a silicon wafer having a lattice structure;the substrate material includes silicon (Si);the first semiconductor material includes an N-type gallium nitride (GaN) material;the active region includes an indium gallium nitride (InGaN) material;the second semiconductor material includes a P-type GaN material; andthe nitrogen (N) atoms in the first region are trapped in the lattice structure of the silicon wafer without forming a silicon nitride (SiN) crystal structure with the ...

III-Nitride Based Semiconductor Structure

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 195-. (canceled)96: A III-nitride based semiconductor structure comprising:{'sub': x', 'y', '(1-x-y), 'a transition layer comprising an alloy of gallium nitride including AlInGaN;'}a III-nitride layer over said transition layer;wherein at least a portion of said transition layer is discontinuously graded.97: The III-nitride based semiconductor structure of claim 96 , wherein a value of y of said transition layer is selected from the group consisting of zero and substantially zero.98: The III-nitride based semiconductor structure of claim 96 , wherein said at least said portion of discontinuously graded transition layer is step-wise graded.99: The III-nitride based semiconductor structure of claim 96 , wherein a value of 1-x-y at a front surface of said transition layer is greater than a value of 1-x-y at a back surface of said transition layer.100: The III-nitride based semiconductor structure of claim 96 , wherein a composition of said III-nitride layer at a bottom surface thereof is different from a composition of said transition layer at a front surface thereof.101: The III-nitride based semiconductor structure of claim ...

DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate. 1. A semiconductor device formed from a common substrate , comprising:first and second epitaxial materials grown from the common substrate, wherein the first and second epitaxial materials define a heterojunction region between the first and second epitaxial materials;conductive regions adjacent the heterojunction region that are configured to provide an electrical current through the heterojunction region, wherein the heterojunction region is electrically isolated from any parasitic conduction paths of the common substrate; anda carrier coupled to the first and second epitaxial materials and configured to support the first and second epitaxial materials when the common substrate is removed.2. The semiconductor device of claim 1 , wherein the carrier comprises a metal material having a thickness of 100 um or greater.3. The semiconductor device of claim 1 , wherein the carrier comprises another substrate that is coupled to the first and second epitaxial materials.4. The semiconductor device of claim 3 , wherein the other substrate includes an electrode that extends through the substrate and provides a conductive path to at least one of the conductive regions.5. The semiconductor device of claim 3 , further comprising yet another ...

Light emitting diodes and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Method for auxiliary operation of a roadway element and operating control system

Second gallium nitride layers that extend into trenches in first gallium nitride layers

A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.

Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls

A sidewall (105) of an underlying gallium nitride layer (106) is laterally grown into a trench (107) in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer ( 108a). Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer.

Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls

A sidewall (105) of an underlying gallium nitride layer (106) is laterally grown into a trench (107) in the underlying gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer ( 108a). Microelectronic devices may then be formed in the lateral gallium nitride layer. Dislocation defects do not significantly propagate laterally from the sidewall into the trench in the underlying gallium nitride layer, so that the lateral gallium nitride semiconductor layer is relatively defect free. Moreover, the sidewall growth may be accomplished without the need to mask portions of the underlying gallium nitride layer during growth of the lateral gallium nitride layer. The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer.

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

A gallium nitride layer is pendeoepitaxially grown on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts. Thus, upon cooling, at least some of the weak posts crack, to thereby relieve stress in the gallium nitride semiconductor layer. Accordingly, low defect density gallium nitride semiconductor layers may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer. The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. By staggering the posts, later fracturing may be promoted compared to long unstaggered posts. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative, the posts preferably are less than one micron wide, more preferably less than one half micron wide, regardless of height, to promote cracking. In yet another alternative, a post weakening region is formed in the posts, adjacent the substrate. In particular, a buried region may be formed in the substrate and the substrate then may be selectively etched to define the plurality of weak posts including the post weakening regions that comprise the buried region. The buried region may comprise implanted ions, preferably hydrogen ions, that can form hydrogen bubbles within the posts that can fracture the posts upon cooling.

Silicon carbide dimpled substrate

A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000 ºC or less and the second temperature preferably is about 1100ºC or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.

Silicon carbide dimpled substrate

A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

A gallium nitride microelectronic layer is fabricated by converting a surface of a (111) silicon layer to 3C-silicon carbide. A layer of 3C-silicon carbide is then epitaxially grown on the converted surface of the (111) silicon layer. A layer of 2H-gallium nitride then is grown on the epitaxially grown layer of 3C-silicon carbide. The layer of 2H-gallium nitride then is laterally grown to produce the gallium nitride microelectronic layer. The silicon layer is a (111) silicon substrate, the surface of which is converted to 3C-silicon carbide, or the (111) silicon layer is part of a Separation by IMplanted OXygen (SIMOX) silicon substrate which includes a layer of implanted oxygen that defines the (111) layer on the (111) silicon substrate, or the (111) silicon layer is a portion of a Silicon-On-Insulator (SOI) substrate in which a (111) silicon layer is bonded to a substrate.

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes ("LEDs") with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Method of manufacturing gallium nitride based high-electron mobility devices

A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

A gallium nitride layer is pendeoepitaxially grown on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts. Thus, upon cooling, at least some of the weak posts crack, to thereby relieve stress in the gallium nitride semiconductor layer. Accordingly, low defect density gallium nitride semiconductor layers may be produced. Moreover, the weak posts can allow relatively easy separation of the substrate from the gallium nitride semiconductor layer to provide a freestanding gallium nitride layer. The weak posts may be formed by forming an array of posts in spaced apart staggered relation on the substrate. By staggering the posts, later fracturing may be promoted compared to long unstaggered posts. Alternatively, the posts may have a height to width ratio in excess of 0.5, so that the relatively narrow posts promote cracking upon reduction of the temperature. In another alternative, the posts preferably are less than one micron wide, more preferably less than one half micron wide, regardless of height, to promote cracking. In yet another alternative, a post weakening region is formed in the posts, adjacent the substrate. In particular, a buried region may be formed in the substrate and the substrate then may be selectively etched to define the plurality of weak posts including the post weakening regions that comprise the buried region. The buried region may comprise implanted ions, preferably hydrogen ions, that can form hydrogen bubbles within the posts that can fracture the posts upon cooling.

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

Gallium nitrid materialen und verfahren zur herstellung von schichten dieser materialen

Devices, systems and methods related to removing parasitic conduction in semiconductor devices

Method for forming a light conversion material

A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added.

Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum

PROCEDURE FOR TROUBLESHOOTING IN A SIGNAL POST COMPUTER SYSTEM AND SIGNAL POST COMPUTER SYSTEM

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

關於移除半導體裝置中寄生傳導之裝置、系統及方法

本文中揭示半導體裝置及用於製造半導體裝置之之方法。根據一特定實施例組態之一方法包括由一磊晶基板形成半導體材料之一堆疊，其中半導體材料之該堆疊界定一異質接面，且其中半導體材料之該堆疊及該磊晶基板進一步界定一塊體區，該塊體區包括鄰近該磊晶基板的該半導體堆疊之一部分。該方法進一步包括將半導體材料之該堆疊附接至一載體，其中該載體經組態以提供至該異質接面之一信號路徑。該方法亦包括藉由移除該磊晶基板來曝露該塊體區。

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Devices, systems, and methods related to removing parasitic conduction in semiconductor devices

Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Gallium nitride material based semiconductor devices including thermally conductive regions

The invention includes providing gallium nitride (12) materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers (16) and heat sinks (18). Heat spreading layers (16) distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks (18) typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer (16) which is connected to a heat sink (18) at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Gallium nitride material based semiconductor devices including thermally conductive regions

The invention includes providing gallium nitride (12) materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers (16) and heat sinks (18). Heat spreading layers (16) distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks (18) typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer (16) which is connected to a heat sink (18) at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Gallium nitride material including thermally conductive regions

Verfahren zur fehleroffenbarung bei einem stellwerksrechnersystem und stellwerksrechnersystem

Die Erfindung betrifft ein Verfahren zur Fehleroffenbarung bei einem Stellwerksrechnersystem mit einem Bedienkanal (1), dessen Eingangssignale signaltechnisch sichere Zustandsmeldungen einer Eisenbahnsicherungsanlage (3) repräsentieren und dessen Ausgangssignale zur Bedienung mindestens eines Elementes, beispielsweise eines Lichtsignals, der Eisenbahnsicherungsanlage (3) ausgebildet sind und auf einem Display (5) visualisiert werden sowie ein Stellwerksrechnersystem zur Durchführung des Verfahrens. Um unnötige Pixelauswertungen des Displays (5) zu vermeiden, ist vorgesehen, dass bei Einleitung der Bedienung des Elementes optisch kodierte, insbesondere QR – Quick Response – kodierte, elementspezifische Pixeldaten des Displays (5) gelesen und mit elementspezifischen Daten eines Prozessabbildes (12) der signaltechnisch sicheren Zustandsmeldungen verglichen werden.

Verfahren zur fehleroffenbarung bei einem stellwerksrechnersystem und stellwerksrechnersystem

Die Erfindung betrifft ein Verfahren zur Fehleroffenbarung bei einem Stellwerksrechnersystem mit einem Bedienkanal (1), dessen Eingangssignale signaltechnisch sichere Zustandsmeldungen einer Eisenbahnsicherungsanlage (3) repräsentieren und dessen Ausgangssignale zur Bedienung mindestens eines Elementes, beispielsweise eines Lichtsignals, der Eisenbahnsicherungsanlage (3) ausgebildet sind und auf einem Display (5) visualisiert werden sowie ein Stellwerksrechnersystem zur Durchführung des Verfahrens. Um unnötige Pixelauswertungen des Displays (5) zu vermeiden, ist vorgesehen, dass bei Einleitung der Bedienung des Elementes optisch kodierte, insbesondere QR – Quick Response – kodierte, elementspezifische Pixeldaten des Displays (5) gelesen und mit elementspezifischen Daten eines Prozessabbildes (12) der signaltechnisch sicheren Zustandsmeldungen verglichen werden.

Verfahren zur fehleroffenbarung bei einem stellwerksrechnersystem und stellwerksrechnersystem

Die Erfindung betrifft ein Verfahren zur Fehleroffenbarung bei einem Stellwerksrechnersystem mit einem Bedienkanal (1), dessen Eingangssignale signaltechnisch sichere Zustandsmeldungen einer Eisenbahnsicherungsanlage (3) repräsentieren und dessen Ausgangssignale zur Bedienung mindestens eines Elementes, beispielsweise eines Lichtsignals, der Eisenbahnsicherungsanlage (3) ausgebildet sind und auf einem Display (5) visualisiert werden sowie ein Stellwerksrechnersystem zur Durchführung des Verfahrens. Um unnötige Pixelauswertungen des Displays (5) zu vermeiden, ist vorgesehen, dass bei Einleitung der Bedienung des Elementes optisch kodierte, insbesondere QR – Quick Response – kodierte, elementspezifische Pixeldaten des Displays (5) gelesen und mit elementspezifischen Daten eines Prozessabbildes (12) der signaltechnisch sicheren Zustandsmeldungen verglichen werden.

Procedimiento para la revelación de errores en un sistema informático de enclavamientos y sistema informático de enclavamientos

Procedimiento para la revelación de errores en un sistema informático de enclavamientos con un canal de operación (1), cuyas señales de entrada representan mensajes de estado seguros en técnica de señales de un sistema de seguridad ferroviaria (3) y cuyas señales de salida están configuradas para la operación de al menos un elemento, por ejemplo de una señal luminosa, del sistema de seguridad ferroviaria (3), y se visualizan sobre una pantalla(5), caracterizado porque, al comienzo de la operación del elemento, sólo se generan variaciones de estado específicas de la operación como datos de pixel específicos del elemento, codificados ópticamente, particularmente codificados por QR - Respuesta Rápida (Quick Response) - de la pantalla (5), y son leídos por un canal de relectura (8) y comparados con los datos específicos del elemento de una imagen del proceso (12) de los mensajes de estado seguros en técnica de señales.

Light emitting diodes with n-polarity and associated methods of manufacturing

Gallium nitride material based semiconductor devices including thermally conductive regions

The invention includes providing gallium nitride (12) materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers (16) and heat sinks (18). Heat spreading layers (16) distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks (18) typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer (16) which is connected to a heat sink (18) at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Light emitting diodes and associated methods of manufacturing

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

Methods of forming a plurality of semiconductor layers using trench arrays

Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a respective semiconductor layer on each of the selective growth regions. The first substrate is then divided into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers. This dividing step is preferably performed by partitioning (e.g., dicing) the first substrate at the spaces between the selective growth regions. The step of forming a plurality of semiconductor layers preferably comprises growing a respective compound semiconductor layer (e.g., gallium nitride layer) on each of the selective growth regions. The growing step may comprise pendeoepitaxially growing a respective gallium nitride layer on each of the selective growth regions. Each of the selective growth regions is also preferably formed as a respective plurality of trenches that have sidewalls which expose compound semiconductor seeds from which epitaxial growth can take place.

Pendeoepitaktisches wachstum von galliumnitrid- schichten auf saphirsubstraten

Light emitting diodes with N-polarity and associated methods of manufacturing

Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.