25-07-2013 дата публикации
Номер: US20130186746A1
An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment. 1. A method of depositing a film on substrates by sputter deposition , comprising the steps of:providing a substrate holder adapted to receive at least one substrate, said substrate holder being affixed to a substantially circular carrier plate, wherein both the substrate and the carrier plate are adapted to synchronously rotate about their respective normal axes;providing at least two elongated, substantially identical deposition sources that are angularly spaced to average-out X-V anisotropy in a plane parallel to the substrate, said sources comprising substantially the same materials and operated to provide substantially the same deposition characteristics, having a long dimension positioned parallel to a carrier plate radius, with their surfaces facing the substrate substantially coplanar, said long dimension being substantially larger than a substrate dimension, and having a perpendicular ...
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