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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 25. Отображено 25.
30-01-2019 дата публикации

반도체 소자

Номер: KR1020190010260A
Автор: 장정훈, 윤여제, 이정식, 임정순, 홍정엽
Принадлежит:

... 실시 예는 기판; 상기 기판 상에 배치되는 버퍼층; 상기 버퍼층 상에 배치되는 필터층; 상기 필터층 상에 배치되는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 배치되는 광흡수층; 상기 광흡수층 상에 배치되는 제1 도전형 제2 반도체층; 상기 제1 도전형 제2 반도체층 상에 배치되는 증폭층; 및 상기 증폭층 상에 배치되는 제2 도전형 반도체층을 포함하고, 상기 버퍼층은 AlGaN을 포함하는 제1 층을 포함하고, 상기 제1 층은 상기 기판에 가장 인접하게 배치된 제1 면과 상기 필터층과 가장 인접하게 배치된 제2 면을 포함하고, 상기 제1 면은 상기 제2 면보다 Al 조성이 큰 반도체 소자를 개시한다.

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Номер записи: 1
16-03-2018 дата публикации

ELECTRIC FIELD ABSORPTION MODULATOR AND OPTICAL COMMUNICATION SYSTEM

Номер: KR1020180028327A
Автор: CHOI, KWANG KI, KIM, WON HO, KIM, CHONG COOK, YOON, YEO JAE, SEO, DEOK WON
Принадлежит:

An embodiment of the present invention relates to an electric field absorption modulator and an optical communication system capable of improving light loss. The modulator comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first electrode disposed on the first conductive semiconductor layer and including a first contact portion connected with the first conductive semiconductor layer; and a second electrode disposed on the second conductive semiconductor layer and spaced apart from the first electrode. The second contact portion is disposed on the active layer and is in contact with the second conductive semiconductor layer. The area of the second contact portion can be less than or equal to 30% of the area of the active layer. COPYRIGHT KIPO 2018 ...

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Номер записи: 2
10-10-2019 дата публикации

SURFACE-EMITTING LASER ELEMENT

Номер: WO2019194600A1
Автор: LEE, Jeong Sik, HAN, Sang Heon, PARK, Keun Uk, YOON, Yeo Jae
Принадлежит:

A surface-emitting laser element according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.

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Номер записи: 3
01-09-2022 дата публикации

반도체 소자

Номер: KR102438972B1
Автор: 서덕원, 김원호, 김종국, 윤여제, 이은형, 전용한
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시 예는 제 1 반도체층이 돌출부를 포함하여 이루어져, 채널층의 면적이 증가하여 반응 속도 및 감도가 향상된 반도체 소자에 관한 것으로, 상부면에서 돌출된 하나 이상의 돌출부를 포함하는 제 1 반도체층; 상기 돌출부를 따라 상기 제 1 반도체층 상부면에 배치되어, 상기 제 1 반도체층과 이종 접합 계면을 형성하는 제 2 반도체층; 상기 돌출부를 따라 상기 제 2 반도체층 상에 배치된 반응 구조체; 및 상기 제 1 반도체층, 상기 제 2 반도체층 및 상기 반응 구조체 중 선택된 물질 상에 배치되며, 상기 돌출부를 사이에 두고 이격된 제 1 전극 및 제 2 전극을 포함한다.

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Номер записи: 4
08-06-2017 дата публикации

LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

Номер: KR1020170063213A
Автор: JEON, YONG HAN, KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, YOON, YEO JAE, LEE, EUN HYUNG
Принадлежит:

The present invention relates to a light emitting element capable of reducing a leakage current, and a manufacturing method thereof. The light emitting element comprises: a conductive base layer; a first insulating layer disposed on the conductive base layer and including a plurality of first holes; and a plurality of light emitting structures including a first semiconductor core electrically connected to the conductive base layer through the first holes, an active layer disposed on the first semiconductor core, and a second semiconductor layer disposed on the active layer, wherein an upper part of the first semiconductor core has a first flat surface. COPYRIGHT KIPO 2017 ...

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Номер записи: 5
29-12-2016 дата публикации

LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE COMPRISING SAME

Номер: WO2016208993A1
Автор: KIM, Won Ho, KIM, Chong Cook, PARK, Hyung Jo, SEO, Deok Won, YOON, Yeo Jae, LEE, Eun Hyung, JEON, Yong Han
Принадлежит:

An embodiment provides a light-emitting element and a display device comprising the same, the light-emitting element comprising: a conductive base layer; an insulating film, which is arranged on the base layer, and which comprises a plurality of first holes; a plurality of light-emitting structures, each comprising a first semiconductor core, which is electrically connected to the base layer through the first holes, an active layer, which is arranged on the first semiconductor core, and a second semiconductor layer; an insulating particle layer comprising insulating particles that fill the space between the plurality of light-emitting structures; and a first conductive layer arranged on the insulating particle layer, wherein the diameter of the insulating particles is smaller than the width of the first holes.

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Номер записи: 6
08-12-2022 дата публикации

반도체 소자

Номер: KR102475917B1
Автор: 이정식, 윤여제, 임정순, 장정훈, 홍정엽
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시 예는 기판; 상기 기판 상에 배치되는 필터층; 상기 필터층 상에 배치되는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 배치되는 광흡수층; 상기 광흡수층 상에 배치되는 제1 도전형 제2 반도체층; 상기 제1 도전형 제2 반도체층 상에 배치되는 증폭층; 및 상기 증폭층 상에 배치되는 제2 도전형 반도체층을 포함하고, 상기 필터층은 360nm의 파장 이상 갖는 광을 방출하는 반도체 소자를 개시한다.

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Номер записи: 7
16-03-2018 дата публикации

ELECTRO-ABSORPTION MODULATOR AND OPTICAL COMMUNICATION SYSTEM

Номер: KR1020180028331A
Автор: KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, YOON, YEO JAE, CHOI, KWANG KI
Принадлежит:

An embodiment of the present invention relates to an electro-absorption modulator and an optical communication system having the same which can improve an extinction ratio. The electro-absorption modulator comprises: a substrate; a light emitting unit of a nitride-based semiconductor arranged on the substrate; and a light modulating unit of the nitride-based semiconductor arranged on the substrate. The light emitting unit and the light modulating unit face each other in a first direction. The light modulating unit includes an active layer through which light is transmitted or absorbed, and the light emitting unit includes a light emitting layer which emits light and faces the active layer. Both of the light emitting unit and the light modulating unit include first and second clad layers of which each arranged between the active layer and the light emitting layer to guide light in the first direction, wherein the width of the active layer can be 20 μm or smaller. COPYRIGHT KIPO 2018 ...

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Номер записи: 8
16-03-2018 дата публикации

SEMICONDUCTOR DEVICE, ELECTRO-ABSORPTION MODULATOR, AND OPTICAL COMMUNICATIONS SYSTEM

Номер: KR1020180028328A
Автор: KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, YOON, YEO JAE, CHOI, KWANG KI
Принадлежит:

Embodiments relate to a semiconductor device, an electro-absorption modulator, and an optical communications system. The semiconductor device according to an embodiment of the present invention comprises: a first conductivity-type semiconductor layer; a first clad layer on the first conductivity-type semiconductor layer; a first waveguide layer on the first clad layer; an active layer disposed on the first waveguide layer and including a band-gap nitride semiconductor of a bending structure including a spontaneous polarization; a second waveguide layer on the active layer; a second clad layer on the second waveguide layer; and a second conductivity-type semiconductor layer on the second clad layer, wherein a refractive index of the active layer may be greater than those of the first and second clad layers, a band gap of the active layer and band gaps of the first and second clad layers may be greater than or equal to 0.5 eV. Therefore, in the embodiments, a nitride semiconductor light emitting ...

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Номер записи: 9
30-01-2019 дата публикации

반도체 소자

Номер: KR1020190009955A
Автор: 임정순, 윤여제, 이정식, 장정훈, 홍정엽
Принадлежит:

... 실시 예는 기판; 상기 기판 상에 배치되는 필터층; 상기 필터층 상에 배치되는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 배치되는 광흡수층; 상기 광흡수층 상에 배치되는 제1 도전형 제2 반도체층; 상기 제1 도전형 제2 반도체층 상에 배치되는 증폭층; 및 상기 증폭층 상에 배치되는 제2 도전형 반도체층을 포함하고, 상기 증폭층은, Al을 포함하고, Al의 조성은 0.143% 내지 0.295%인 반도체 소자를 개시한다.

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Номер записи: 10
20-04-2023 дата публикации

발광소자 및 그 제조방법

Номер: KR102523696B1
Автор: 전용한, 김원호, 김종국, 서덕원, 윤여제, 이은형
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시 예는, 도전성 베이스층; 상기 도전성 베이스층 상에 배치되고 복수 개의 제1홀을 포함하는 제1절연층; 및 상기 제1홀을 통해 상기 도전성 베이스층과 전기적으로 연결되는 제1반도체 코어와, 상기 제1반도체 코어상에 배치되는 활성층, 및 상기 활성층상에 배치되는 제2반도체층을 포함하는 복수 개의 발광 구조물을 포함하고, 상기 제1반도체 코어의 상부는 제1평탄면을 갖는 발광소자 및 그 제조방법을 개시한다.

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Номер записи: 11
28-02-2023 дата публикации

표면방출발광 레이저소자, 이를 포함하는 발광장치 및 이의 제조방법

Номер: KR102504307B1
Автор: 박근욱, 윤여제
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시예는 표면방출발광 레이저소자 및 이를 포함하는 발광장치와 이의 제조방법에 관한 것이다.실시예에 따른 표면방출발광 레이저소자는, 기판과, 상기 기판 상에 배치된 제1 반사층과, 상기 제1 반사층 상에 배치는 활성층과, 상기 활성층 상에 배치되며 개구부(aperture) 및 절연영역을 포함하는 애퍼처 영역 및 상기 애퍼처 영역 상에 배치된 제2 반사층을 포함할 수 있다.상기 애퍼처 영역의 도핑레벨(doping Level)은 (X+3)ΧE18(atoms/cm3)일 수 있다.상기 개구부의 제1 최대직경(a) 대비 제2 최소직경(b)의 비율(b/a)은 [95.0-(2X/3)]% 내지 [99.9- (X/3)]%일 수 있다. 상기 X는 0 내지 3일 수 있다.

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Номер записи: 12
02-01-2020 дата публикации

SURFACE-EMITTING LASER DEVICE AND LIGHT-EMITTING DEVICE COMPRISING SAME

Номер: WO2020005006A1
Автор: LEE, Jeong Sik, HAN, Sang Heon, PARK, Keun Uk, YOON, Yeo Jae
Принадлежит:

An embodiment relates to a surface-emitting laser device and a light-emitting device including same. A surface-emitting laser device according to the embodiment can include: a first reflective layer; an active area disposed on the first reflective layer; an aperture area disposed on the active area; and a second reflective layer disposed on the aperture area. The second reflective layer can include: a first AlGaAs-based layer comprising Alx1Ga(1-x1)As (wherein 0 Подробнее

Номер записи: 13
05-07-2018 дата публикации

SEMICONDUCTOR DEVICE

Номер: WO2018124677A1
Автор: KIM, Seung Hwan, KIM, Won Ho, KIM, Chong Cook, SEO, Deok Won, YOON, Yeo Jae, CHOI, Kwang Ki
Принадлежит:

An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and ...

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Номер записи: 14
24-05-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: KR1020170057010A
Автор: SEO, DEOK WON, KIM, WON HO, KIM, CHONG COOK, YOON, YEO JAE, LEE, EUN HYUNG, JEON, YONG HAN
Принадлежит:

An embodiment of the present invention relates to a semiconductor device capable of improving a reaction speed and sensitivity by increasing an area of a channel layer by including a protrusion part in a first semiconductor layer. The semiconductor device includes: the first semiconductor layer including one or more protrusion parts protruded from an upper surface thereof; a second semiconductor layer disposed on the upper side of the first semiconductor layer along the protrusion part and forming a heterojunction interface with the first semiconductor layer; a reaction structure disposed on the second semiconductor layer along the protrusion part; and a first electrode and a second electrode which are disposed on a selected material of the first semiconductor layer, the second semiconductor layer, and the reaction structure, and are separated from each other while interposing the protrusion part. COPYRIGHT KIPO 2017 ...

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Номер записи: 15
18-12-2018 дата публикации

SEMICONDUCTOR DEVICE

Номер: KR1020180134113A
Автор: JANG, JUNG HUN, YOON, YEO JAE, LEE, JEONG SIK, YIM, JEONG SOON, HONG, JUNG YEOP
Принадлежит:

According to an embodiment of the present invention, disclosed is a semiconductor device which reduces avalanche occurring even if the thickness of an optical absorption layer is changed. The semiconductor device comprises: a substrate; a filter layer arranged on the substrate; a first conductive first semiconductor layer arranged on the filter layer; an optical absorption layer arranged on the first conductive first semiconductor layer; a first conductive second semiconductor layer arranged on the optical absorption layer; an amplifying layer arranged on the first conductive second semiconductor layer; and a second conductive semiconductor layer arranged on the amplifying layer. The first conductive second semiconductor layer has the thickness of 30-60 nm, and Si doping of 2 to 3 E18. COPYRIGHT KIPO 2019 ...

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Номер записи: 16
30-01-2019 дата публикации

반도체 소자

Номер: KR1020190010256A
Автор: 이정식, 윤여제, 임정순, 장정훈, 홍정엽
Принадлежит:

... 실시 예는 기판; 상기 기판 상에 배치되는 필터층; 상기 필터층 상에 배치되는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 배치되는 광흡수층; 상기 광흡수층 상에 배치되는 제1 도전형 제2 반도체층; 상기 제1 도전형 제2 반도체층 상에 배치되는 증폭층; 및 상기 증폭층 상에 배치되는 제2 도전형 반도체층을 포함하고, 상기 필터층은 360nm의 파장 이상 갖는 광을 방출하는 반도체 소자를 개시한다.

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Номер записи: 17
29-06-2017 дата публикации

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING SAME

Номер: KR1020170073926A
Автор: LEE, EUN HYUNG, KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, YOON, YEO JAE, JEON, YONG HAN, CHOI, MYOUNG JAE, CHO, YONG HOON, ISNAENI, KO, SUK MIN, CHOI, SUNG HAN, HUR, JOON SEOK
Принадлежит:

According to an embodiment, the present invention includes: a substrate; a plurality of light emitting structures disposed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a gap filling layer surrounding the plurality of light emitting structures and having a refractive index lower than that of the light emitting structure; a first electrode disposed on the first conductive semiconductor layer; and a second electrode disposed on the gap filling layer. COPYRIGHT KIPO 2017 ...

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Номер записи: 18
29-06-2017 дата публикации

LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT PACKAGE INCLUDING SAME

Номер: KR1020170073925A
Автор: LEE, EUN HYUNG, KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, YOON, YEO JAE, JEON, YONG HAN, CHOI, MYOUNG JAE, CHO, YONG HOON, KO, SUK MIN, YOO, YANG SEOK, CHOI, SUNG HAN
Принадлежит:

The present invention relates to a light emitting element and a light emitting element package including the same. The light emitting element according to an embodiment of the present invention comprises: a substrate; and a plurality of first light emitting structures and a plurality of second light emitting structures disposed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first light emitting structure is disposed in a first area on the substrate, and the second light emitting structure is disposed in a second area around the first area on the substrate. The first light emitting structure emits light in a first wavelength range, and the second light emitting structure emits light in a second wavelength range shorter than in the first wavelength range. Therefore, crystal defects such as dislocation can be reduced in growth of the light emitting structure, loss of light in the light emitting element ...

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Номер записи: 19
03-07-2017 дата публикации

LIGHT EMITTING ELEMENT

Номер: KR1020170075408A
Автор: KIM, CHONG COOK, KIM, WON HO, SEO, DEOK WON, YOON, YEO JAE, LEE, EUN HYUNG, JEON, YONG HAN
Принадлежит:

The present invention relates to a light emitting element capable of efficiently preventing a leakage current. The light emitting element according to an embodiment of the present invention comprises: a first semiconductor layer; a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an electron blocking layer including at least three pairs of a barrier layer and a well layer between the second semiconductor layer and the active layer. The barrier layer comprises: a first barrier layer closest to the second semiconductor layer; a second barrier layer closest to the active layer; and a third barrier layer between the first barrier layer and the second barrier layer, wherein a bandgap of the third barrier layer is the smallest among the first, second and third barrier layers. COPYRIGHT KIPO 2017 ...

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Номер записи: 20
27-02-2023 дата публикации

반도체 소자

Номер: KR102504305B1
Автор: 장정훈, 윤여제, 이정식, 임정순, 홍정엽
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시예는 기판; 상기 기판 상에 배치되는 필터층; 상기 필터층 상에 배치되는 제1 도전형 제1 반도체층; 상기 제1 도전형 제1 반도체층 상에 배치되는 광흡수층; 상기 광흡수층 상에 배치되는 제1 도전형 제2 반도체층; 상기 제1 도전형 제2 반도체층 상에 배치되는 증폭층; 및 상기 증폭층 상에 배치되는 제2 도전형 반도체층을 포함하고, 상기 제1 도전형 제2 반도체층은, 두께가 30nm 내지 60nm이고, Si 도핑이 2E18 내지 3E18인 반도체 소자를 개시한다.

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Номер записи: 21
02-01-2020 дата публикации

SURFACE-EMITTING LASER ELEMENT, LIGHT-EMITTING DEVICE COMPRISING SAME, AND METHOD FOR MANUFACTURING SAME

Номер: WO2020005005A1
Автор: PARK, Keun Uk, YOON, Yeo Jae
Принадлежит:

An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)ХΧE18(atoms/cm3). A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0-(2X/3)]% to [99.9-(X/3)]%, wherein X may be 0 to 3.

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Номер записи: 22
14-10-2022 дата публикации

발광 소자

Номер: KR102455083B1
Автор: 김종국, 김원호, 서덕원, 윤여제, 이은형, 전용한
Принадлежит: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드

... 실시 예는 누설 전류를 효율적으로 방지할 수 있는 발광 소자에 관한 것으로, 본 발명 실시 예의 발광 소자는 제 1 반도체층; 제 2 반도체층; 상기 제 1 반도체층과 상기 제 2 반도체층 사이에 배치된 활성층; 및 상기 제 2 반도체층과 상기 활성층 사이에 적어도 세 쌍의 장벽층과 우물층을 포함하는 전자 차단층을 포함하며, 상기 장벽층은 상기 제 2 반도체층과 가장 인접한 제 1 장벽층, 상기 활성층과 가장 인접한 제 2 장벽층 및 상기 제 1 장벽층과 상기 제 2 장벽층 사이의 제 3 장벽층을 포함하며, 상기 제 1, 제 2 및 제 3 장벽층 중 상기 제 3 장벽층의 밴드갭이 가장 작다.

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Номер записи: 23
19-06-2018 дата публикации

SEMICONDUCTOR DEVICE

Номер: KR1020180066554A
Автор: YOON, YEO JAE, KIM, SEUNG HWAN, KIM, WON HO, KIM, CHONG COOK, SEO, DEOK WON, CHOI, KWANG KI
Принадлежит:

A semiconductor device according to an embodiment of the present invention comprises: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an insulating layer disposed on the first conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer through the insulating layer; a second electrode electrically connected to the second conductive semiconductor layer through the insulating layer; an intermediate electrode disposed between the second conductive semiconductor layer and the second electrode; a reflective layer disposed on the intermediate electrode; and a transmitting layer disposed below the light-emitting structure. The reflective layer includes: a first part overlapping the insulating layer in the thickness direction of the light-emitting ...

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Номер записи: 24
04-07-2018 дата публикации

SEMICONDUCTOR DEVICE

Номер: KR1020180075324A
Автор: SEO, DEOK WON, KIM, SEUNG HWAN, KIM, WON HO, KIM, CHONG COOK, YOON, YEO JAE, CHOI, KWANG KI
Принадлежит:

The present invention relates to a semiconductor device capable of preventing light leakage and having an improved extinction ratio. The semiconductor device according to an embodiment includes: a first conductivity type semiconductor layer; an active layer provided on the first conductivity type semiconductor layer; a semiconductor structure provided on the active layer, and having a second conductivity type semiconductor layer that includes a first region and a second region spaced apart from each other; a second electrode provided on the first region; and a third electrode provided on the second region. The second conductivity type semiconductor layer further includes a third region provided between the first region and the second region, a length ratio of the third region to a length of the second region is from 1:0.25 to 1:0.1 in a first direction, and the first direction is a direction in which the first region and the second region are spaced apart from each other. COPYRIGHT KIPO ...

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Номер записи: 25