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Применить Всего найдено 7. Отображено 7.
11-12-2018 дата публикации

MANUFACTURING METHOD OF GRAPHENE OXIDE

Номер: KR1020180131939A
Принадлежит:

The present invention relates to a manufacturing method of graphene oxide which comprises: a first step of creating a product which includes graphite oxide by conducting reaction of a flake type graphite-based substance, an acid solution and an oxidant; a second step of isolating a graphene oxide product by removing a spent oxidant and spent acid in the product; a third step of performing electrolysis to a graphene oxide product from the second step; a fourth step of washing a graphene oxide product from the third step by utilizing a Couette-Taylor reactor; and a fifth step of processing filtration by adding an alcohol-based solvent to the washed suspension. According to the present invention, provided is economical and environment-friendly graphene oxide, with high quality, from which interlayer impurities are removed with small washing times and a small amount of water in a graphene oxide washing step. COPYRIGHT KIPO 2019 (AA) Catalyst (BB) Synthesis (CC) Electrolysis (DD) Ethanol (EE ...

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08-11-2016 дата публикации

PROCESS FOR PREPARING GRAPHENE OXIDE

Номер: KR1020160128927A
Принадлежит:

The present invention relates to a process for preparing graphene oxide, which comprises the steps of: conducting reaction of a plate-like graphite material, an acid solution and an oxidizing agent to obtain graphene oxide; separating the reactants of the reaction into graphene oxide and a waste acid solution; recovering the acid solution and oxidizing agent to the separated waste acid solution and recycling them to the step of preparing graphene oxide; and washing the separated graphene oxide to obtain graphene oxide. According to the process for preparing graphene oxide of the present invention, oxidation of graphite is carried out in a continuous reactor using Taylor vortex flow, and thus the reaction mixture in the reactor shows low viscosity. Therefore, it is possible to separate graphene oxide and the waste acid solution without supplying deionized water additionally and to reuse the separated waste acid solution for oxidizing a plate-like graphite material, such as graphite. As a ...

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28-01-2010 дата публикации

CHEMICAL MECHANICAL POLISHING COMPOSITION CONTAINING POLYSILICON POLISH FINISHER

Номер: KR2010011080A2
Принадлежит:

The present invention relates to a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a lower isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.

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09-11-2017 дата публикации

METHOD FOR PRODUCING GRAPHENE

Номер: KR1020170123760A
Принадлежит:

The present invention relates to a method for producing graphene. To this end, the production method comprises the following steps: carrying out a reaction using graphite, a first acidic solution, and an oxidizer so as to acquire a reactant containing graphite oxide; separating the reactant into graphite oxide and a waste acidic solution; washing and exfoliating the graphite oxide separated from the reactant using a cleanser containing a sulfite-containing compound so as to obtain graphene oxide; and reducing the graphene oxide. According to the present invention, it is possible to produce high purity graphene in high efficiency. COPYRIGHT KIPO 2017 (S1) Obtain a reactant (S2) Separate (S2-1,S3-1) Filter (S3) Wash (S4) Reduce (S5) Reintroduce ...

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28-01-2010 дата публикации

CHEMICAL MECHANICAL POLISHING COMPOSITION CONTAINING POLYSILICON POLISH FINISHER

Номер: WO2010011080A3
Принадлежит:

The present invention relates to a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a lower isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.

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11-12-2018 дата публикации

METHOD FOR MANUFACTURING GRAPHINE OXIDE

Номер: KR1020180131677A
Принадлежит:

The present invention relates to a method for manufacturing graphine oxide, which comprises: a first step of reacting a flake type graphite material, an acid solution and an oxidizing agent to produce a product containing oxidized graphite; a second step of removing a waste oxidizing agent and waste acid from the product to separate an oxidized graphene product; a third step of washing the oxidized graphene product with a Kuett-Taylor reactor; and a fourth step of filtering and adding an alcoholic solvent to the washed suspension. According to the method, it is possible to provide a high quality economical and environmentally friendly oxidation graphene from which interlayer impurities are removed with a small number of cleaning times and a small amount of water in the oxidation graphene cleaning step. COPYRIGHT KIPO 2019 (AA) Catalyst (BB) Synthesis (CC) Taylor reactor (DD) Ethanol (EE) Lyophilization ...

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05-04-2023 дата публикации

그래핀의 제조방법

Номер: KR102517904B1
Автор: 손정익, 박휴범, 이창호
Принадлежит: 솔브레인 주식회사

... 본 발명은 그래핀의 제조방법에 관한 것으로, 상기 제조방법은 흑연, 제1 산 용액 및 산화제를 반응시켜 산화 흑연을 포함하는 반응물을 수득하는 단계; 상기 반응물을 산화 흑연과 산폐액으로 분리하는 단계; 상기 반응물에서 분리된 산화 흑연을 아황산염이 함유된 화합물을 포함하는 세정제로 세정 및 박리하여 산화 그래핀을 수득하는 단계; 및 상기 산화 그래핀을 환원시키는 단계를 포함한다.

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