VERFAHREN ZUM HERSTELLEN EINES DIODENLASERS MIT DOPPEL-HETEROSTRUKTUR

Semiconductor laser with surface metallising film - consists of separated contact strips, with spacing corresp. to wavelength to be generated

The metallised film (9) is used for potential application and consists of mutually separated contact strips (10). The central spacing (11) of each contact strip corresponds to the semiconductor laser wavelength to be generated. The width of the contact strips is pref. 1/6 of the semiconductor laser wavelength. The semiconductor laser surface is typically partly covered by a periodically structured insulating layer (8). The contact strips are deposited on the surface free from the insulating layer. The insulating layer is deposited onto a contact layer (5) of the semiconductor layer, with the insulating layer structured by a photolithographic process according to the required contact strip spacing. ADVANTAGE - Improved performance, without variation of the laser frequency dependent on the charge carrier density.

Laterales Maßschneidern einer Strominjektion für Laserdioden

Eine Halbleiterlaserdiode beinhaltet mehrere Schichten, die entlang einer ersten Richtung gestapelt sind, wobei die mehreren Schichten Folgendes beinhalten: eine erste Mehrzahl von Halbleiterschichten, einen optischen Wellenleiter auf die erste Mehrzahl von Halbleiterschichten, wobei der optische Wellenleiter ein aktives Halbleitergebiet zum Erzeugen von Laserlicht beinhaltet und wobei der optische Wellenleiter eine Resonanzkavität mit einer optischen Achse definiert; und die zweite Mehrzahl von Halbleiterschichten auf dem optischen Wellenleitergebiet, wobei ein Spezifischer-Widerstand-Profil wenigstens einer Schicht der mehreren Schichten graduell zwischen einem maximalen spezifischen Widerstand und einem minimalen spezifischen Widerstand entlang einer zweiten Richtung variiert, die sich orthogonal zu der ersten Richtung erstreckt, wobei eine Entfernung zwischen dem maximalen spezifischen Widerstand und dem minimalen spezifischen Widerstand größer als etwa 2 Mikrometer ist.

SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME

Lichtemittierende Vorrichtung.

Optische Halbleitervorrichtung

Halbleiterlaser mit Lokalisierung des Stroms.

INJEKTIONSLASER

HALBLEITERLASER

OPTISCHE HALBLEITERVORRICHTUNG

STRAHLUNGSEMITTIERENDE HALBLEITERDIODE UND DEREN HERSTELLUNGSVERFAHREN

Halbleiterlaservorrichtung

Semiconductor laser device, semiconductor laser module, and optical fiber amplifier

Semiconductor devices

Semiconductor light emitting device, laser amplifier, and integrated light amplifier and wavelength variable filter

Injection lasers

A double channel planar buried heterostructure semiconductor injection laser includes a tapered region 17 where the waveguide width is adiabatically reduced to produce a mode spot size closely matched with the model spot of a conventional single mode silica fibre optically coupled with the laser. ...

CURRENT CONFINING SEMICONDUCTOR LIGHT EMISSION DIVICE

A semiconductor light emission device 200 is provided in a stacked layer arrangement with an substrate 101; an n-type layer 102; a diffusion accommodation layer 110; an active region 111, comprising a p-n (intrinsic) material and a p-type layer 112; the device further comprises a first and second diffusion region 130A, 130B which are formed in the p-type and active region layers through further p-type doping, terminating in the diffusion accommodation layer; whereby the diffusion regions 130 act to confine current to the central region 132. The p-type doping in the diffusion regions 130 produce p+/n junctions in the active region which may have higher threshold voltages than the p-n regions. The semiconductor light emission device 200 may also be in the form of a light emitting diode (LED) or a laser diode, more specifically a vertical cavity surface emitting laser (VCSEL).

Semiconductor device having a miniband

An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.

SEMICONDUCTOR LASER

A semiconductor laser device

SEMICONDUCTOR LASER

Semiconductor lasers

INJECTION LASER

... 1523220 Semiconductor lasers INTERNATIONAL BUSINESS MACHINES CORP 16 Dec 1976 [24 Dec 1975] 52597/76 Heading H1C In a resonant cavity injection laser comprising a monocrystalline semi-conductive body including at leat one P-N junction 22/23 radiation generated in an emitter section E is Q-switched by a saturable absorber section A formed by ion implantation.

INJEKTIONSLASER

HIGH SPEED DIODE LASER WITH DISTRIBUTED FEEDBACK AND NARROW OF SPECTRAL ONES EMISSION WIDTH

INJECTION LASER

HIGH-POWER DIODE LASER SYSTEM

Channelizer switch

SEMICONDUCTOR LASER

LASER HAVING A SUBSTANTIALLY PLANAR WAVEGUIDE

Integrated semiconductor laser with electronic directivity and focusing control

OPTICAL DEVICES

A laser diode

NARROW SPECTRAL WIDTH HIGH POWER DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS

High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 .mu.m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.

HIGH OUTPUT POWER LASER

A heterostructure injection laser is provided with very thin cladding or confinement layers adjacent each side of the active layer. The cladding layers are characterized with the wider bandgap while the active layer has the smallest bandgap and the highest index of refraction. The injected carriers are confined by the thin wide bandgap cladding layers on either side of the active layer while the optical wave is confined by thick intermediate index layers of the laser. This structure provides for overall low thermal resistance thereby allowing for higher output power with low beam divergence.

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting ...

PROCESS FOR PRODUCING AN INJECTION LASER AND LASER OBTAINED BY THIS PROCESS

CURRENT CONFINEMENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR LASER CRT TARGET

LIGHT EMITTING DEVICE

SEMICONDUCTOR LASER DEVICE

STRIPE-GEOMETRY SOLID-STATE LASER WITH LIGHT GUIDANCE BY TRANSVERSE REFRACTIVE-INDEX GRADIENT

FIBER GRATING FEEDBACK STABILIZATION OF BROAD AREA LASER DIODE

The laser device of the present invention includes a high-power, fiber-coupled optical source having a broad area laser diode (10) with a high reflective coating at its rear facet (12), coupling optics (20), and an optical fiber (30) having fiber grating (32). The fiber grating (32) serves to reflect a portion of the optical beam back to the broad area laser diode (10), thereby stabilizing the wavelength of the optical beam. The fiber grating (32) and the rear facet (12) of the broad area laser diode (10) serve as nodes for an external resonator, thereby limiting the diffraction of the optical beam. The effects of wavelength fluctuation and beam diffraction are reduced together using minimal mechanical components.

SEMICONDUCTOR LASER LIGHT SOURCE

A semiconductor laser light source includes a semiconductor laser (1), and a sub-mount (2). The sub-mount (2) includes a sub-mount substrate (20), an Au layer (22) placed above the sub-mount substrate (20), a barrier layer (23) which is placed on the Au layer (22) and has a barrier portion (23b) at least in a portion of its outer peripheral portion which is other than a portion corresponding to a side of an output end of the semiconductor laser (1), and a solder layer (25) placed on the barrier layer in an area surrounded by the barrier portion (23b), wherein the semiconductor laser (1) is bonded to the sub-mount (2) through the solder layer (25), in a state where the semiconductor laser (1) is spaced apart by a predetermined interval from an inner surface of the barrier portion (23b), and further, the output end protrudes, in a direction of output of the laser light, from an end of the solder layer (25) which corresponds to the side of the output end of the semiconductor laser (1).

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER

A p-clad layer constituting the semiconductor laser device according to this invention includes an inner clad area near to an active layer, and an outer clad area remote from the active layer, the outer clad area having a narrower bandgap than that of the inner clad area, the thickness and the composition of the inner clad area being so set that beams do not substantially exude from the active layer to the outer clad area. A multi-quantum barrier structure is provided between the active layer and the p-clad layer. At least one of barrier layers of the multi-quantum barrier structure is formed of a material which applies tensile stress thereto, and at least one of well layers provided between one of the barrier layers and its adjacent one is formed of a material which applies contraction stress thereto, whereby an average lattice constant of the multi-quantum barrier agrees with that of a substrate. The use of a material in the barrier layers allows the bandgap to be sufficiently wide. Consequently ...

QUANTUM BARRIER SEMICONDUCTOR OPTICAL DEVICE

SEMICONDUCTOR LASER DEVICE

As shown in Fig. 1, on a semiconductor substrate 20 formed in sequence are a second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a first p-type clad layer 16, a second p-type clad layer 17, a current constriction layer 18, and a p-type contact layer 19. The carrier blocking layers 13 and 15 are doped to a high doping concentration of more than 1x10 18cm -3. The first clad layers 12 and 16 and the second clad layers 11 and 17 are doped to a low doping concentration of less than 3x10 17cm -3. The p-type carrier blocking layer 15 is doped with carbon or magnesium which is low in the diffusivity. Accordingly, the carriers are successfully confined in the active layer 14 thus to suppress the internal loss and the electrical resistance, whereby a high-efficiency, high-output semiconductor laser device can be obtained.

LASER DIODE WITH AN ION-IMPLANTED REGION

A laser device and a method of fabrication are disclosed in which the device comprises one or more ion-implanted regions (37, 39) as a means to decrease the occurrence of device failures attributable to dark-line defects. The ionimplanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

Halbleiterlaser

INJECTION LASER.

Double-heterostructure injection laser, and a method for its production

The active zone (10) of the laser has a smaller energy gap than that of the layers (11, 12) surrounding this zone. A rib which consists of a material having opposite conductivity to that of the abovementioned zone and layers extends in the direction of the optical axis of the laser. The pn-junction (13) which is produced between the zone and the layers on the one hand and the rib on the other hand is displaced in the region located under the rib by diffusion of a doping material either into the active zone (10) or through said zone into a layer (12) which is located under the active zone. ...

A passive waveguide structure with alternating/GalnAs AlInAs layers for mid infrared optoelectronic devices.

Die Erfindung betrifft einen optischen Halbleiteremitter, welcher in einer optischen Mode betreibbar ist und einen Verstärkungsabschnitt aufweist, wobei der Emitter eine Halbleiter-Wellenleiterstruktur umfasst, die aus zwei alternierenden Schichten von Halbleitermaterialien A, B hergestellt ist, welche Brechungsindizes von N a und N b aufweisen, mit einem effektiven Brechungsindex N 0 der optischen Mode in dem Niedrigverlust-Wellenleiter zwischen N a und N b , wobei die Wellenleiterstruktur transparent für vom Verstärkungsabschnitt emittiertes Licht ist, wobei das Verhältnis der Dicke der Materialien A und B so gewählt ist, um die Wellenleiterstruktur mit dem effektiven Brechungsindex N 0 , welcher identisch zu dem Brechungsindex des Verstärkungsbereichs ist oder innerhalb eines Fehlerbereichs von 5% im Vergleich zum Brechungsindex des Verstärkungsabschnitts liegt, auszustatten, wobei der Verstärkungsbereich auf Stoss angrenzend zu dem Niedrigverlust-Wellenleiter ist und wobei die Grösse ...

LIGHTING DEVICE

LASER A SEMI-CONDUCTEUR A PLUSIEURS LONGUEURS D'ONDE INDEPENDANTES ET SON PROCEDE DE REALISATION

LASER A SEMICONDUCTEUR A PLUSIEURS LONGUEURS D'ONDE INDEPENDANTES ET SON PROCEDE DE REALISATION. LE LASER DE L'INVENTION EST DU TYPE A DOUBLE HETEROSTRUCTURE ET A RUBAN. SA COUCHE ACTIVE 14 PRESENTE, DANS SON PLAN, DEUX COMPOSITIONS DIFFERENTES, CE QUI PERMET DE DEFINIR DEUX LASERS A, B EMETTANT A DEUX LONGUEURS D'ONDE DIFFERENTES L, L. UN SILLON 24 EST GRAVE ENTRE LES DEUX LASERS ET LES ISOLE ELECTRIQUEMENT. PAR BOMBARDEMENT PROTONIQUE A TRAVERS LE SILLON, UNE ZONE 30 EST OBTENUE DANS LA COUCHE ACTIVE QUI ISOLE OPTIQUEMENT LES DEUX LASERS. LE PROCEDE DE REALISATION FAIT USAGE DE DEUX EPITAXIES. APPPLICATION EN TELECOMMUNICATIONS OPTIQUES.

PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE

Laser compact à semi-conducteur du type à pompage électronique.

Laser à semi-conducteur compact du type à pompage par bombardement électronique effectué par une matrice (23) de cathodes à micropointes. Le semi-conducteur (10) du type à gap direct est supporté par une électrode (50) et maintenu en regard de la matrice (23). Des écrans de focalisation (44, 46) permettent de focaliser le bombardement électronique sur une bande de la surface semi-conductrice. L'ensemble est maintenu dans une enceinte (34) sous vide secondaire. Application au traitement optique du signal.

TEMPERATURE-STABLE SEMICONDUCTOR LASER HOMOGENEOUS-BEAM

INJECTOR LIGHT ELEMENT

L'invention concerne un élément injecteur de lumière (20) comprenant un corps (21) s'étendant selon un axe longitudinal (22), et une source de lumière (23) placée en regard d'une extrémité (25) du corps (21), la source de lumière (23) comprenant une pluralité de diodes laser à cavité verticale émettant par la surface (VCSEL), ladite pluralité de diodes étant disposées de sorte à former une surface d'émission (26) sensiblement perpendiculaire à l'axe longitudinal (22) du corps (21). L'invention concerne également un photobioréacteur (10) comprenant un tel élément injecteur de lumière (20).

DEVICE TO GENERATE OR INTENSIFY AN ELECTROMAGNETIC RADIATION COHERENT, AND PROCEEDED FOR THE MANUFACTURE OF THIS DEVICE

PROCESS OF MODULATION DIRIGEE OF THE COMPOSITION OR THE DOPING OF SEMICONDUCTORS, IN PARTICULAR FOR THE REALIZATION OF MONOLITHIC ELECTRONICS COMPONENTS OF TYPE CORRESPONDING DOUBLE DIFFUSION, USE AND PRODUCTS

SEMICONDUCTOR LASER WITH SPOT-SIZE CONVERTER AND METHOD FOR FABRICATING THE SAME, CAPABLE OF MINIMIZING COUPLING LOSS WITH OPTICAL FIBER BY FORMING UPPER LAYER OF SSC ZONE THICKER THAN UPPER FACE OF GAIN ZONE SELECTIVELY

PURPOSE: A semiconductor laser with a spot-size converter and a method for fabricating the same are provided to reduce a critical current of the semiconductor laser and to enhance a current-light efficiency property by maintaining a low resistance in a gain zone. CONSTITUTION: In a semiconductor laser with a spot-size converter, a substrate(110) is prepared. A gain zone formed on an upper face of the substrate(110) discharges a laser. An SSC(Spot-Size Converter) zone formed on the upper face of the substrate(110) converts an optical mode of the laser. An upper layer(140) is formed on an upper face of the gain zone and the SSC zone, wherein a thickness in the SSC zone is thicker than in the gain zone. © KIPO 2007 ...

Multilayer semiconductor laser structure - with induced layer of dislocations between layers to prevent defect transmission

Group iii nitride semiconductor laser diode, and method for producing group iii nitride semiconductor laser diode

Disclosed is a group III nitride semiconductor laser diode which has a cladding layer capable of providing high light confinement effect and carrier confinement effect. An n-type Al0.08Ga0.92N cladding layer (72) is grown on a (20-21)-plane GaN substrate (71) in such a manner that the lattice is relaxed. A GaN light guide layer (73a) is grown on the n-type cladding layer (72) in such a manner that the lattice is relaxed. An active layer (74), a GaN light guide layer (73b), an Al0.12Ga0.88N electron blocking layer (75) and a GaN light guide layer (73c) are grown on the light guide layer (73a) in such a manner that the lattice is not relaxed, respectively. A p-type Al0.08Ga0.92N cladding layer (76) is grown on the light guide layer (73c) in such a manner that the lattice is relaxed. A p-type GaN contact layer (77) is grown on the p-type cladding layer (76) in such a manner that the lattice is not relaxed, thereby producing a semiconductor laser (11a). The dislocation densities of junctions ...

Semiconductor laser device

Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

A semiconductor laser device

An optical semiconductor device comprising, an active region; and a p-doped cladding region disposed on one side of the active region; wherein an electron-reflecting barrier is provided on the p-side of the active region for reflecting both -electrons and X-electrons, the electron-reflecting barrier providing a greater potential barrier to -electrons than the p-doped cladding region.

INTEGRATED SEMICONDUCTOR LASER WITH ELECTRONIC DIRECTIVITY AND FOCUSING CONTROL

An integrated semiconductor laser device (A, B, C) includes electronic direction and focusing control. The integrated semiconductor laser device (A, B, C) may be used for either transmitting output laser beams or as a laser amplifier for receiving incoming laser beams. The direction and focusing control of the device operates by applying electric current to electrodes coupled to an active channel (2, 3) within an extension chamber of the integrated semiconductor laser device. The applied currents inject a minority carrier density distribution into the active channel (2, 3). Since the speed of light within a semiconductor changes with minority carrier density distribution, a laser beam wave front may be shaped by the injected minority carrier density distribution to direct and/or focus a laser light beam. The direction and focusing control is completely integrated within the semiconductor laser device and time constants for the electronic direction and focusing control are in nanoseconds ...

NARROW SPECTRAL WIDTH HIGH POWER DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS

High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 μm or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.

High-power diode laser system

A diode laser system having a diode amplifier member with a large transverse gain area. The diode amplifier member includes an amplifying medium for amplifying a number of spatial modes of a spatial light distribution. The laser system further includes a number of passive reflective members forming a laser cavity which includes at least a part of the diode amplifier member, each of the passive reflective members being adapted, during operation, to reflect light at least partially into the amplifying medium. The passive reflective members are adapted, during operation, to induce, via the light reflected by them, a self-induced dynamic gain and refractive index grating in the diode amplifier member, the dynamic gain and refractive index grating selecting one of said spatial modes and suppressing at least a part of the remaining spatial modes of the spatial light distribution.

Semiconductor laser

The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises: a semiconductor bottom guide layer (11) having the following two adjacent bottom parts: an undoped first bottom part (11a) adjacent the central region, and an n-type doped second bottom part (11b) adjacent the bottom cladding layer, a semiconductor top guide layer (12) having the following two adjacent top parts: an undoped first top part (12a) adjacent the central region, and a p-type doped second top part (12b) adjacent the top cladding layer. The first bottom and top parts form a non-doped region (ND) more than 0.5 mum thick, and the refractive index difference (DELTAnopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.

Semiconductor laser device

As shown in FIG. 1, on a semiconductor substrate 20 formed in sequence are a second n-type clad layer 11, a first n-type clad layer 12, an n-type carrier blocking layer 13, an active layer 14, a p-type carrier blocking layer 15, a first p-type clad layer 16, a second p-type clad layer 17, a current constriction layer 18, and a p-type contact layer 19. The carrier blocking layers 13 and 15 are doped to a high doping concentration of more than 1×1018 cm-3. The first clad layers 12 and 16 and the second clad layers 11 and 17 are doped to a low doping concentration of less than 3×1017 cm-3. The p-type carrier blocking layer 15 is doped with carbon or magnesium which is low in the diffusivity. Accordingly, the carriers are successfully confined in the active layer 14 thus to suppress the internal loss and the electrical resistance, whereby a high-efficiency, high-output semiconductor laser device can be obtained.

Semiconductor light emitting device, laser amplifier, and integrated light amplifier and wavelength variable filter

A semiconductor light emitting device includes a double heterojunction structure including an active layer, a cladding layer having a first conductivity type, and a cladding layer having a second conductivity type, which cladding layers sandwich the active layer, and an undoped cladding layer interposed between the first conductivity type cladding layer and the active layer, which undoped cladding layer is the same material as the first conductivity type cladding layer and has a thickness larger than the diffusion length of carriers in the undoped cladding layer. Therefore, carriers are accumulated in the undoped cladding layer and then regularly injected into the active layer by Coulomb repulsion between the carriers, resulting in a semiconductor light emitting device with reduced heat generation, reduced fluctuation of emitted laser light, and reduced noise.

Heterojunction semiconductor device

A heterojunction semiconductor device comprising an active zone made from a ternary or quaternary alloy of the Ga In As P type and resting via a buffer layer of similar composition on a substrate in such a way that the active layer and the buffer zone have similar expansion coefficients.

FABRICATION OF JUNCTION LASER DEVICES HAVING MODE-SUPPRESSING REGIONS

Semiconductor light-emitting device

A semiconductor laser, having an active layer with a double-quantum-well structure, includes two InGaN well layers, each of which has a thickness of 5 nm. The threshold current deteriorates to a relatively small degree while differential efficiency is improved considerably in a region having a light confinement coefficient of 3.0% or less. The light confinement coefficient indicates the proportion of light in the well layers with respect to light in the light emitting device, during light emission. When the light confinement coefficient is less than 1.5%, the threshold current increases considerably and the improvement in differential efficiency becomes small. It is therefore preferable that the lower limit of the light confinement coefficient be about 1.5%. A differential efficiency of 1.6 W/A or more is obtained when light the confinement coefficient is 3.0% or less, and a differential efficiency of 1.7 W/A or more is obtained when the light confinement coefficient is 2.6% or less.

Double wavelength semiconductor light emitting device and method of manufacturing the same

Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same. Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and ...

OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

Co-modulation of DBR laser and integrated optical amplifier

In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source.

Semiconductor laser and method of manufacturing the same

A semiconductor laser has an active region which includes at least a quantum well layer (44b) and upper (44c) and lower (44a) optical waveguide layers and is of InxGa1-xAsyP1-y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers (47,43) are formed on opposite sides of the active region (44). At least one of the optical waveguide layers is not smaller than 0.25µm in thickness, and a current blocking layer (45) is grown on the upper waveguide layer (44c). Chemical etching of the current blocking layer (45) is performed down to just above the upper waveguide layer (44c) and an upper cladding layer (47) is grown on the mesa stripe channel.

Double-heterostructure semiconductor laser with mesa stripe waveguide

Disclosed herein is a double-heterostructure semiconductor laser (10) which emits a laser beam in a visible light range at ambient temperature. An active layer (20) serving as a light emission layer is sandwiched between first and second cladding layers (18, 26). The first and second cladding layer (18) comprises an n type InAlP, while the second cladding layer (26) comprises a p type InAlP and has a mesa stripe shape having slanted side surfaces (26a, 26b) so as to define a light waveguide channel of the semiconductor laser. Current-blocking layers (34-1, 34-2) are formed to cover the slanted side surfaces (26a, 26b) of the second cladding layer (26). The current-blocking layers (34-1), 34-2) comprise GaAs which is a III-V group compound semiconductor different from the III-V group compound semiconductor (i.e., InAlP) comprising in the second cladding layer (26). The composition ratio of aluminum in the second cladding layer (26) is set not to be less than 0.4, whereby a Shottky barrier ...

Semiconductor diode

A semiconductor electro luminescent diode (24) has a body of a semiconductor material, having a pair of spaced opposed end surfaces (28, 30), side surfaces (2, 34) and top (36) and bottom (38) surfaces. The body includes therein a active layer (48) which extends from one end surface (28) to a point spaced from the other end surface (30). The active layer is of a width narrower than the distance between the side surfaces. Also, the active layer has a portion (50) adjacent the other end surface of the body which is tapered to come to a point. First clad layers (44) of a material having an index of refraction smaller than that of the active layer are at opposite sides of the active layer and extend between the end of the active layer and the other end surface of the body. Second clad layers (46) of a material having an index of refraction larger than that of the first clay layers but less than the index or refraction of the active layer are on the first clad layer. Radiation generated in the ...

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To suppress a leak current from a window layer of a semiconductor laser to a small amount without lowering a rate of operation of a crystal growth device. SOLUTION: A first buffer layer (GaAs) 14, a second buffer layer (AlGaAs) 16, and a diffusion suppression layer (GaAs or AlGaAs) 18 are laminated on a GaAs board 12; and a first clad layer 20 is formed on the lamination. When an AlGaAs is used as the material of the diffusion suppression layer 18, the composition ratio of an Al in the AlGaAs is determined to be smaller than the composition ratio of an Al in the AlGaAs of the second buffer layer 16. This structure lowers a diffusion speed of an impurity (Zn) at the diffusion suppression layer 18 to stop the diffusion of the impurity at the second buffer layer 16 when a window layer 42 is formed. This enables a reduction in the thickness of the second buffer layer 16. A juncture leak current from the window layer 42, therefore, is suppressed to a small amount without ...

SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

PURPOSE: To prevent a large mode hop from occurring and to lessen kinks in a semiconductor laser device which is equipped with a quantum well active layer composed of an InGaAs well, an AlGaAs optical guide layer, and an AlGaAs barrier layer and oscillates laser beam of a specific frequency band by a method wherein a multiple reflection film is provided inside a second contact layer of the laser device. CONSTITUTION: A quantum well active layer 4 is composed of two AlGaAs optical guide layers 4a, two InGaAs well layers 4b sandwiched between the layers 4a, and an AlGaAs barrier layer c sandwiched between the layers 4b. The quantum well active layer 4 where an InGaAs layer is made to serve as a well layer is capable of oscillating laser beams of wavelengths 0.9 to 1.2μm basing on a combination of its composition ratio of In, thickness, and number of layers. A multiple reflection film layer 20 is provided between a first P-type GaAs second contact layer 8a and a second P-type GaAs second contact ...

IMPROVEMENTS IN OR RELATING TO SEMI-CONDUCTOR LASERS

HALBLEITERLASERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG

LASER-DIODE

Vorrichtung zur Emission von Strahlung einer einzelnen Wellenlänge

Halbleiterlaser mit niedrigem Schwellstrom und zugehöriges Herstellungsverfahren

Halbleiterlaser mit integrierter Wellenleiterlinse

HALBLEITERBAUTEIL MIT ZN-DIFFUSIONSSCHICHT UND VERFAHREN ZU DESSEN HERSTELLUNG

HALBLEITER-LASER

HETEROSTRUKTUR-HALBLEITERLASERDIODE

Edge-emitting semiconductor laser

The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body ( 10 ), which comprises a waveguide region ( 4 ), wherein the waveguide region ( 4 ) comprises a first waveguide layer ( 2 A), a second waveguide layer ( 2 B) and an active layer ( 3 ) arranged between the first waveguide layer ( 2 A) and the second waveguide layer ( 2 B) and serving for generating laser radiation ( 5 ), and the waveguide region ( 4 ) is arranged between a first cladding layer ( 1 A) and a second cladding layer ( 1 B) disposed downstream of the waveguide region ( 4 ) in the growth direction of the semiconductor body ( 10 ). The waveguide region ( 4 ) has a thickness d of 400 nm or less, and an emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction parallel to the layer plane of the active layer ( 3 ) and the emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction perpendicular to the layer plane of the active layer ( 3 ) differ from one another by less than a factor of 3.

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

A high-power and high-efficiency light emitting device with emission wavelength (λ peak ) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

DFB Laser Diode Having a Lateral Coupling for Large Output Power

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate ( 10 ), at least one active layer ( 40 ) that is arranged on the semiconductor substrate, at least one ridge ( 70 ) that is arranged above the active layer ( 40 ), at least one periodic surface structure ( 110 ) that is arranged next to the ridge ( 70 ) above the active layer ( 40 ) and at least one wave guide layer ( 30, 50 ) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.

Group iii nitride semiconductor element and epitaxial wafer

A primary surface 23 a of a supporting base 23 of a light-emitting diode 21 a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25 a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane S R3 shown in FIG. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33 a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in FIG. 5 ) and the (0001) plane of a well layer 37 a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate

Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 17 cm −3 , and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

Iii-nitride semiconductor laser device, and method of fabricating the iii- nitride semiconductor laser device

A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

Broad Area Laser Having an Epitaxial Stack of Layers and Method for the Production Thereof

A broad stripe laser ( 1 ) comprising an epitaxial layer stack ( 2 ), which contains an active, radiation-generating layer ( 21 ) and has a top side ( 22 ) and an underside ( 23 ). The layer stack ( 2 ) has trenches ( 3 ) in which at least one layer of the layer stack ( 2 ) is at least partly removed and which lead from the top side ( 22 ) in the direction of the underside ( 23 ). The layer stack ( 2 ) has on the top side ridges ( 4 ) each adjoining the trenches ( 3 ), such that the layer stack ( 2 ) is embodied in striped fashion on the top side. The ridges ( 4 ) and the trenches ( 3 ) respectively have a width (d 1 , d 2 ) of at most 20 μm.

Light projection unit and light projection apparatus

A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.

Light projection unit and light projection device

A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.

Semiconductor laser element, method of manufacturing semiconductor laser element, and optical module

In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

Hole blocking layers in non-polar and semi-polar green light emitting devices

Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.

Semiconductor optical integrated device

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. 2. The nitride semiconductor laser device according to claim 1 , wherein the distance d is 60 μm or more.3. The nitride semiconductor laser device according to claim 1 , wherein the nitride semiconductor substrate is doped with a dopant.4. The nitride semiconductor laser device according to claim 1 , wherein a high-luminescence region which is more luminous than a surrounding region is formed near a middle between adjacent dots.5. The nitride semiconductor laser device according to claim 4 , wherein the laser light waveguide region is located elsewhere than in the high-luminescence region.6. The nitride semiconductor laser device according to claim 1 , wherein a surface of the nitride semiconductor substrate on which the nitride semiconductor layer is grown is a (0001) plane.7. The nitride semiconductor laser device according to claim 1 , wherein a surface of the nitride semiconductor substrate on which the nitride semiconductor layer is grown has an off-angle in a range of 0.2° to 1° relative to a (0001) plane.8. The nitride semiconductor laser device according to claim 1 , wherein claim 1 , of a surface of the nitride semiconductor ...

EDGE-EMITTING ETCHED-FACET LASERS

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip. 1. A laser chip comprising:a substrate;an epitaxial structure on the substrate, the epitaxial structure including an active region, the active region generating light;a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser; anda first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.2. The laser chip of claim 1 , wherein the first recessed region has a first end wall.3. The laser chip of claim 2 , wherein the first end wall is at an angle other than normal to the first direction.4. The laser chip of claim 3 , wherein the back etched facet is coated with a highly reflective material.5. The laser chip of claim 1 , further comprising:a second recessed region formed in said epitaxial structure and arranged at a second distance from the waveguide having an opening adjacent to the front etched facet, the second recessed region including a second end wall.6. The laser chip of claim 5 , wherein the second end wall is at angle other than normal to the first direction.7. ...

Hybrid laser light sources for photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

SEMICONDUCTOR LASER

A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer. 1. A semiconductor laser comprising:a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends; anda dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body in a cross section orthogonal to the ridge waveguide, a wavelength at which a transmittance of light of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.2. The semiconductor laser according to claim 1 , further comprising:a substrate having a first surface, the stacked body being ...

LASER DIODE WITH HIGH EFFICIENCY

It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. 1. An optoelectronic semiconductor component , comprising: characterized in wherein:', 'at least one of the conditions (i) and (ii) is met:, 'an active layer that is suitable for generating radiation, a first waveguide layer positioned on a first side of the active layer, a first cladding layer positioned on the first waveguide layer, a second waveguide layer positioned on a second side of the active layer, and a second cladding layer positioned on the second waveguide layer, wherein the first side and the second side are opposite with respect to the active layer, wherein a reflection facet for reflecting the radiation emitted by the active layer and an emission facet for reflection and feed-out of the radiation emitted by the active layer, wherein the reflection facet and the emission facet are each positioned in the marginal area of the active layer, and wherein the reflection facet and the emission facet are positioned opposite one another with respect to the active layer,'}{'sub': 'WL', 'b': '0.04; are met;', 'claim-text': {'sub': 'WL', 'where dis the sum total of the layer thickness of the first waveguide layer, the layer thickness of the active layer, and the layer thickness of the second waveguide layer, and Δn is a maximum of the refractive index difference between the first waveguide layer and the first cladding layer and the refractive index difference between the second waveguide layer and the second cladding layer, and'}, '(i) the active layer, the first cladding layer, the first waveguide layer, the second waveguide layer, and the second cladding layer are designed such that the conditions 0.01 μm≦d≦1.0 μm and Δn≧'}{'sub': 'eff', '(ii) the semiconductor component comprises a ridge waveguide with an effective index step Δn>0.06.'}2. The semiconductor component according to claim 1 ,characterized in that wherein:the first ...

Method for the reuse of gallium nitride epitaxial substrates

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

SEMICONDUCTOR LASER WITH CATHODE METAL LAYER DISPOSED IN TRENCH REGION

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction. 1. A laser diode , comprising:a substrate;a junction layer disposed on the substrate, the junction layer forming a quantum well of the laser diode;a junction surface comprising at least one channel that extends through the junction layer to the substrate, the at least one channel defining an anode region and a cathode region;a cathode electrical junction disposed on the junction surface at the cathode region;an anode electrical junction disposed on the junction surface and coupled to the junction layer at the anode region; anda cathode metal layer disposed in at least a trench region of the at least one channel, the cathode metal layer coupling the substrate to the cathode electrical junction.2. The laser diode of claim 1 , wherein the trench region is elongated along a laser output direction of the laser diode.3. The laser diode of claim 2 , wherein the trench region extends substantially from an emission edge to an opposing edge of the laser diode.4. The laser diode of claim 1 , wherein the at least one channel is elongated along a laser output direction of the laser diode.5. The laser diode of claim 1 , wherein the at least one channel comprises two channels claim 1 , wherein the anode region is disposed between the two channels.6. The laser diode of claim 5 , ...

SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER, METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY AND OPTICAL APPARATUS EQUIPPED WITH SURFACE-EMITTING LASER ARRAY

A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (λ: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer. 1. A method of manufacturing a surface-emitting laser having a plurality of semiconductor layers including a lower reflecting mirror , an active layer and an upper reflecting mirror stacked on a substrate , a light emission portion of the upper reflecting mirror being provided with a surface relief structure formed by using a stepped structure for controlling the reflectance distribution , the surface-emitting laser being produced as a mesa structure , comprising:forming a first dielectric film on the semiconductor layers;forming a first pattern for defining the mesa structure and also forming a second pattern for defining the surface relief structure in the first dielectric film in the single step;removing the surface of the stacked semiconductor layers along the first and second patterns, using the first dielectric film having the first and second patterns formed therein as mask and also a first etch stop layer in the upper reflecting mirror, to form the first and second patterns on the surface of ...

Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers

A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

Human placental collagen compositions, and methods of making and using the same

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal.

WAVEGUIDE STRUCTURE FOR MID-IR MULTIWAVELENGTH CONCATENATED DISTRIBUTED-FEEDBACK LASER WITH AN ACTIVE CORE MADE OF CASCADED STAGES

Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed. 1. A waveguide structure comprising:a. an active semiconductor optical waveguide made of an optical gain material;b. a bridge; andc. a passive optical waveguide; wherein the bridge is spatially located between the active waveguide and passive waveguide and wherein the active waveguide, bridge, and passive waveguide are not physically connected via an optical waveguide material.2. The waveguide structure of claim 1 , wherein the bridge comprises a periodic structure that selectively allows certain wavelengths of light to couple to the passive optical waveguide.3. The waveguide structure of claim 1 , wherein the active waveguide claim 1 , bridge claim 1 , and passive waveguide comprise GaInAs or GaAlInAs.4. The waveguide structure of claim 1 , wherein the active waveguide and bridge or the bridge and passive waveguide are parallel and from about 1 μm to about 8 μm apart at the nearest point.5. The waveguide structure of wherein the active waveguide and bridge are parallel and from about 2 μm to about 6 μm apart at the nearest point and the bridge and the passive waveguide are parallel and from about 1 μm to about 8 μm apart at the nearest point.6. A laser comprising:a. a gain material comprising at least two, compositionally non-identical, layers forming a superlattice, wherein the gain material generates photons by intersubband or interband transitions;b. at least two lasing sections placed in series, wherein each lasing section comprises gratings have non-equivalent periods or Bragg wavelengths, and wherein the lasing sections are separated by a electrical isolation region; and i. an active waveguide in contact with a gain material;', 'ii. at least one bridge; ...

Semiconductor laser assembly and method for producing a semiconductor laser assembly

A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Method and Apparatus for the Line Narrowing of Diode Lasers

A system for narrowing the spectral output of diode lasers through the use of dielectric stacks in the laser cavity comprising an alternating sequence of layers of dielectric material and air, which dielectric stacks are fabricated through the controlled laser ablation of the dielectric material.

HIGH-EFFICIENCY DIODE LASER

A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01. 1. A diode laser having:a first n-conducting cladding layer,a first n-conducting waveguide layer, which is arranged on the first cladding layer,an active layer, which is suitable for generating radiation and which is arranged on the first waveguide layer,a second p-conducting waveguide layer, which is arranged on the active layer, anda second p-conducting cladding layer, which is arranged on the second waveguide layer,wherein the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm,whereinthe active layer the first cladding layer, the second cladding layer,the first waveguide layer and the second waveguide layer are designed in such a manner that the maximum mode intensity of the fundamental mode is in a region outside the active layer and wherein the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.2. The diode laser according to claim 1 , ...

METHOD FOR MANUFACTURING MULTI-DIMENSIONAL TARGET WAVEGUIDE GRATING AND VOLUME GRATING WITH MICRO-STRUCTURE QUASI-PHASE-MATCHING

A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch. The manufacturing method may be applied to design and manufacture a multi-dimensional target waveguide grating and volume grating for any grating profile, and may simplify the grating manufacturing process and also make possible a variety of grating-based photon devices. 112-. (canceled)141. The method of claim , further comprisingrealizing target equivalent grating with arbitrary grating structure, the tilted/arc grating or chirped/phase shifted grating by microstructure quasi-phase matching technology;obtaining a specific target equivalent grating or the ghost grating with a certain Fourier order, by designing the corresponding sampling structure including sampling period distribution via composing the grating wave-vectors;{'sub': 'sN', "realizing the target equivalent grating with arbitrary directions or arc profiles by changing the direction of the wave-vector of the sampling structure's Fourier sub-grating {right arrow over (G)}({right arrow over (r)}),"}when changing the ...

Group-iii nitride semiconductor laser device

A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Directly Modulated Laser for PON Applications

In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND LASER MODULE

An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film. 1. An optical device comprising:a ridge semiconductor laser element formed on a substrate;a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element; anda second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure, the second insulating film having a density lower than a density of the first insulating film.2. The optical device according to claim 1 , wherein a refractive index of the second insulating film is lower than a refractive index of the first insulating film.3. The optical device according to claim 1 , wherein an etching rate of the second insulating film is higher than an etching rate of the first insulating film.4. The optical device according to claim 1 , wherein the first insulating film coats the lateral wall portion and the substrate within an extent from the lateral wall portion to a border line closer to the lateral wall portion than an end portion at which a scribe line is formed and the semiconductor laser element is separated.5. The optical device according to claim 4 , wherein the second insulating film coats the substrate within an extent from the end portion claim 4 , at which the semiconductor laser element is separated claim 4 , to the border line.6. The optical device according to claim 1 , wherein the ridge structure has a mesa shape in which a width of the ridge structure is reduced when leaving away in a thickness direction of the substrate.7. The optical device according ...

SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane. 19-. (canceled)10. A method for fabricating a semiconductor optical integrated device , the method comprising:forming a first core layer over a (001) plane of a substrate;forming a first clad layer over the first core layer;leaving the first core layer and the first clad layer formed in a first region and etching the first core layer and the first clad layer formed in a second region which is in a (110) orientation from the first region;forming a first crystal surface on a side on a second region side of the first clad layer which remains in the first region, the first crystal surface forming an angle which is greater than or equal to 55 degrees and less than or equal to 90 degrees with a (001) plane; andforming a semiconductor layer in the second region.11. The method according to claim 10 , wherein the forming the first crystal surface includes performing heat treatment on the first clad layer which remains in the first region.12. The method according to claim 11 , wherein at least a (110) plane appears by the heat treatment on a side on the second region side of the first clad layer which remains in the first region.13. The method according to claim 10 , wherein the etching the first core layer and the first clad layer formed in the second region includes side-etching the ...

Laser Light Source

A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate

The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

Semiconductor Material Doping

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

VERTICAL-CAVITY SURFACE-EMITTING LASER AND METHOD OF FABRICATING THE SAME

Provided are a wavelength swept vertical-cavity surface-emitting laser and a method of fabricating the same. The laser may include a substrate, a lower reflection layer on the substrate, an active layer on the lower reflection layer, a sacrificial layer disposed on a first side of the active layer, a stopper disposed on a second side of the active layer that may be spaced apart from the sacrificial layer, and an upper reflection layer fixed on the sacrificial layer, the upper reflection layer extending over the stopper and the active layer. The stopper defines a minimum separation distance between the upper reflection layer and the active layer. 1. A wavelength swept vertical-cavity surface-emitting laser , comprising:a substrate;a lower reflection layer on the substrate;an active layer on the lower reflection layer;a sacrificial layer disposed on a first side of the active layer;a stopper disposed on a second side of the active layer that is spaced apart from the sacrificial layer; andan upper reflection layer fixed on the sacrificial layer, the upper reflection layer extending over the stopper and the active layer,wherein the stopper defines a minimum separation distance between the upper reflection layer and the active layer.2. The laser of claim 1 , wherein the upper reflection layer comprises:a fixation part on the sacrificial layer;a spring connected to the fixation part, the spring extending from the first side to the second side; anda membrane connected to the spring and separated from the stopper on the active layer.3. The laser of claim 2 , wherein the spring further comprises at least one of a metal layer or a metal oxide layer.4. The laser of claim 2 , wherein the membrane is provided to have a hole exposing the stopper.5. The laser of claim 4 , wherein the stopper has a diameter greater than that of the hole.6. The laser of claim 5 , wherein the stopper comprisesa bottom block provided below the hole; anda capping layer covering the bottom block and ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions. 2. The semiconductor laser device according to claim 1 , wherein:the pair of terrace sections sandwich a central portion of a length of the ridge section, the length of the ridge section extending in the resonator length direction;a top portion of the semiconductor laminated section includes first sections sandwiching therebetween an end portion of the ridge section on the a front facet side of the semiconductor laminated section, and second sections sandwiching therebetween an end portion of the ridge section on a rear facet side of the semiconductor laminated section, the first and second sections sandwiching the terrace sections therebetween as viewed in plan from the top of the semiconductor laminated section; andthe first sections and/or the second sections are closer to the semiconductor substrate than the ridge section and the terrace sections.3. The semiconductor laser device according to claim 2 , further comprising a heat sink connected by a thermally conductive material to the first sections and/or the second sections which are closer to the semiconductor substrate than the ridge section and the terrace sections.4. The semiconductor laser device according to claim 1 , wherein distance ...

Hybrid vertical cavity laser for photonic integrated circuit

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

Self-Injection Locking Using Resonator On Silicon Based Chip

Disclosed are devices, methods, and systems for controlling output of a laser. An example device can comprise a first portion comprising a gain element and a second portion comprising a silicon material. The second portion can comprise a waveguide configured to receive light from the gain element, an optical resonator configured to at least partially reflect light back to the gain element via the waveguide, and a first tuning element configured to tune a resonant frequency of the optical resonator. 1. A device , comprising:a first portion comprising a gain element; and a waveguide configured to receive light from the gain element;', 'an optical resonator configured to at least partially reflect light back to the gain element via the waveguide; and', 'a first tuning element configured to tune a resonant frequency of the optical resonator., 'a second portion comprising a silicon material, wherein the second portion comprises2. The device of claim 1 , wherein the optical resonator is tuned by the first tuning element to cause one or more of: (1) output of a single longitudinal mode by the gain element claim 1 , (2) output of a single transversal mode by the gain element claim 1 , (3) narrowing of a linewidth of a lasing mode of the gain element claim 1 , or (4) tuning a frequency of the gain element.3. The device of claim 1 , wherein the optical resonator comprises a ring resonator.4. The device of claim 1 , wherein the gain element comprises one or more of a Fabry-Perot laser claim 1 , a multimodal laser claim 1 , or a multimodal Fabry-Perot laser.5. The device of claim 1 , wherein one or more of the waveguide or the optical resonator comprises a dielectric material disposed on the silicon material claim 1 , and wherein the dielectric material comprises silicon nitride.6. The device of claim 1 , wherein the second portion comprises one or more of a chip claim 1 , an integrated circuit claim 1 , or a monolithically integrated portion.7. The device of claim 1 , wherein ...

Laser Architectures Using Quantum Well Intermixing Techniques

A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts. 1. A laser chip comprising:a plurality of laser stripes including at least one laser stripe, one or more first sub-regions along an active region of the at least one laser stripe, the one or more first sub-regions including a first transition energy, and', 'one or more second sub-regions along the active region, the one or more second sub-regions including a second transition energy,', 'wherein the second transition energy is different from the first transition energy,, 'the at least one laser stripe includingwherein the one or more first sub-regions include an epitaxial wafer, and the one or more second sub-regions include the epitaxial wafer.2. The laser chip of claim 1 , further comprising:an unexposed laser stripe, the unexposed laser stripe including a third transition energy,wherein the third transition energy is same as a transition energy of the epitaxial wafer.3. The laser chip of claim 1 , wherein the one or more first sub-regions are located proximate to facets of the at least one laser stripe claim 1 , and the one or more second sub-regions are located proximate to a gain region of the at least one laser stripe.4. The laser chip of claim 3 , wherein the plurality ...

WAVEGUIDE ELEMENT

Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave. 1. A waveguide element , comprising:a waveguide for guiding an electromagnetic wave;a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; andan impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna,wherein the waveguide includes:a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; anda core layer arranged between the first conductor layer and the second conductor layer, andwherein the core layer has a gain of the electromagnetic wave or a nonlinearity of carriers for the electromagnetic wave.2. The waveguide element according to claim 1 , wherein the core layer has a layered structure which is in contact with the first conductor layer and the second conductor layer and includes a semiconductor.3. The waveguide element according to claim 1 , wherein the part of the waveguide comprises an end portion of the waveguide.4. The ...

FLARED LASER OSCILLATOR WAVEGUIDE

A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations. 1. A broad area semiconductor diode laser device comprising:a multimode high reflector facet;a partial reflector facet spaced from said multimode high reflector facet; anda flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1.2. The device of wherein said flared current injection region propagates light such that a beam output at said partial reflector facet has a narrower beam width than said partial reflector facet width and a corresponding narrower slow-axis divergence.3. The device of wherein said substantially narrower beam width and slow-axis divergence in conjunction with an enlarged total pumped area provided by the flaring of said flared current injection region are operable to reduce thermal resistance and electrical series resistance and result in increased beam brightness and lower beam parameter product of said beam output for a selected device output power.4. The device of wherein said high reflector facet has a width selected in the range of about 10 μm to 200 μm.5. The device of wherein said flared current injection region flares with a constant change in width with respect to length.6. The device of wherein said flared current injection region flares with a variable change in ...

OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS

An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. 154.-. (canceled)55. A method for forming an optical device comprising:providing a gallium and nitrogen containing substrate member having a {20-21} crystalline surface region characterized by an off-cut orientation of −8 degrees to −2 degrees or 2 degrees to 8 degrees toward a c-plane, the gallium and nitrogen containing substrate member having a laser stripe region overlying a portion of the crystalline surface region, the laser stripe region having a first end and a second end;forming a first cleaved facet on the first end of the laser stripe region; andforming a second cleaved facet on the second end of the laser stripe region.56. The method of wherein the first cleaved facet is substantially parallel with the second cleaved facet.57. The method of wherein the first cleaved facet comprises a first mirror surface characterized by a scribed region having a saw tooth profile.58. The method of wherein the first mirror surface is provided by a scribing and breaking process from either a front side or a backside of the gallium and nitrogen containing substrate member.59. The method of wherein the first mirror surface comprises a coating to modify the reflection ...

LASER CHIP WITH MULTIPLE OUTPUTS ON COMMON SIDE

A laser chip including a laser cavity that produces multiple laser outputs. A laser waveguide guides light through the laser cavity and has multiple output facets. Each of the laser outputs passes through one of the output facets. The laser waveguide guides the laser outputs such that the angle between the exit direction of different laser outputs is less than 180°. The exit direction for a laser output is the direction of propagation of light in the laser waveguide at one of the output facets. 1. An optical system , comprising: a laser waveguide guiding light through the laser cavity having multiple output facets, each of the laser outputs passing through one of the output facets,', 'the laser waveguide guiding the laser outputs such that an angle between an exit direction for different laser outputs is less than 180°, the exit direction for a laser output being a direction of propagation of light in the laser waveguide at one of the output facets; and', 'a planar optical device that receives the laser outputs from the laser chip without returning the laser outputs to the laser cavity., 'a laser chip including a laser cavity that produces laser outputs,'}2. (canceled)3. The system of claim 1 , wherein the optical device is constructed on a silicon-on-insulator wafer.4. The system of claim 1 , wherein the angle between the exit directions is less than 90°.5. The system of claim 1 , wherein the angle between the exit directions is less than 10°.6. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and at least two of the laser outputs cross the same lateral side.7. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and the laser chip includes an anti-reflective coating on only one of the lateral sides.8. The system of claim 1 , wherein a medium through which the laser waveguide guides the light has a chemical composition that is constant along the length of ...

Semiconductor laser

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

LIGHT EMITTING ELEMENT

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer , a light emitting structure , and a second light reflecting layer . The light emitting structure is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer , an active layer , and a second compound semiconductor layer . In the laminated structure , at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer 1. A light emitting element comprising a laminated structure formed by laminating:a first light reflecting layer;a light emitting structure; anda second light reflecting layer, whereinthe light emitting structure is formed by laminating:from the first light reflecting layer side,a first compound semiconductor layer;an active layer; anda second compound semiconductor layer, andin the laminated structure, at least two light absorbing material layers are formed in parallel to a virtual plane occupied by the active layer.2. The light emitting element according to claim 1 , wherein at least four light absorbing material layers are formed.3. The light emitting element according to claim 1 , wherein{'sub': eq', '0, 'claim-text': {'br': None, 'i': m·λ', 'n', 'L', 'm·λ', 'n, 'sub': 0', 'eq', '0', '0', 'eq, '0.9×{()/(2·)}≤≤1.1×{()/(2·)}'}, 'when an oscillation wavelength is represented by Ao, an equivalent refractive index of a whole of the two light absorbing material layers and a portion of the laminated structure located between the light absorbing material layers is represented by n, and a distance between the light absorbing material layers is represented by L,'}is satisfied.Provided that m is 1 or any integer of 2 or more including 1.4. The light emitting element according to claim 1 , wherein the light absorbing material layers have a thickness of λ0/(4·n) or less.5. The light emitting element according to claim 1 , wherein the light absorbing material ...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE

A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×10cmor more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength. 1. A group-III nitride semiconductor laser device , comprising:a GaN substrate; andan active layer provided on the GaN substrate,{'sup': 19', '−3, 'wherein the GaN substrate has an oxygen concentration of 5×10cmor more, and'}an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.2. The group-III nitride semiconductor laser device of claim 1 ,{'sup': 2', '−3, 'wherein the GaN substrate has an oxygen concentration of 1×10cmor more.'}3. The group-III nitride semiconductor laser device of claim 1 ,{'sup': '−1', 'wherein the GaN substrate has a light absorption coefficient of 10 cmor more.'}4. The group-III nitride semiconductor laser device of claim 1 ,wherein the GaN substrate has an n-type electrical conductivity. The present disclosure relates to a group-III nitride semiconductor laser device.Group-III nitride crystals such as GaN are expected to be applied to next-generation optical devices such as a high-power light emitting diode (LED) for illumination, a laser display, and a laser diode (LD) for a laser processing machine, new-generation electronic devices such as a high-power transistor mounted on an electric vehicle (EV) and a plug-in hybrid vehicle (PHV), or the like. In order to improve performance of the optical and electronic devices using the group-III nitride crystals, it is desirable that a substrate as a base material is constituted with a high-quality group-III nitride single crystal ...

TRANSVERSE MODE-CONFINED DEEP-UV LED

A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the thickness is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes. 1. A light emitting device comprising:a substrate;a buffer layer on the substrate;a first active layer on the buffer layer, at least a first portion of the first active layer comprising a first electrical polarity; and at least a second portion of the first active layer;', 'a light emitting region on the portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength, the light emitting region having at least one dimension parallel to the light emitting region thickness smaller than 10 times the target wavelength, the emitted light being confined to fewer than 10 transverse modes, the thickness of the light emitting region being a multiple of the target wavelength, and the target wavelength being between 200 nm and 300 nm; and', 'a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity., 'a plurality of mesa regions on the first active layer, wherein each mesa region comprises2. The light emitting device of claim 1 , wherein the thickness of the ...

OPTICAL AMPLIFIER SYSTEM AND PULSED LASER USING A REDUCED AMOUNT OF ENERGY PER PULSE

The invention relates to an optical amplifier system for amplifying laser pulses, including a solid amplifying medium capable of receiving a beam of laser pulses to be amplified and generating a beam of amplified laser pulses, and a means of reducing the energy stored in said optical amplifying medium by means of optical pumping. According to the invention, said reducing means includes a continuous resonant cavity and a first optical separation means capable of sepaarating continuous resonant cavity into a common portion and a low arm, the common portion including an optical amplifying medium and the loss arm inlcuding an optical loss means, said optical separation means being capable of selectively directing a beam of pulses outside the optical path of said loss arm of the continuous resonant cavity, and of directing a continuous bean toward said loss arm of the continuous resonant cavity. 110. Optical amplifier system for the amplification of high power , high energy and high speed laser pulses () , such optical amplifier system comprising:{'b': 1', '1', '10', '20', '10', '20, 'A solid state optic gain medium (), such optic gain medium () being able to receive a bundle of laser pulses to be amplified () and to generate a bundle of amplified laser pulses (), with the rate of the laser pulses (, ) being between 1 kHz and several hundred kHz; and'}{'b': '1', 'means of limitation of the energy stored by optic pumping in such optic gain medium (), characterized in that{'b': 2', '1', '7', '14', '2', '7', '14', '2', '1', '9', '7', '14', '2', '2', '11', '2', '1', '20, 'such means of limitation comprising a continuous resonating cavity (C) arranged around said optic gain medium () and first optic means of separation (, ) arranged in such continuous resonating cavity (C), such optic means of separation (, ) being able to separate such continuous resonating cavity (C) in a common part and a branch of losses, the common part comprising the optic gain medium () and the branch ...

FLUID ANALYZER

A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface. 1. A fluid analyzer comprising:a substrate;a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface;a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction; andan optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.2. The fluid analyzer according to claim 1 ,wherein an optical resonator is formed between the first light-emitting surface and the second light-emitting surface.3. The fluid analyzer according to claim 2 ,wherein the quantum cascade laser is formed as a Fabry-Perot element oscillating in a multi-mode.4. The fluid analyzer according to claim 2 ,wherein the quantum cascade laser is formed as a distributed feedback element oscillating in a single mode, anda length of the optical path of the light up to the optical ...

AlGaInP-BASED SEMICONDUCTOR LASER

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (Al x Ga 1-x ) 0.5 In 0.5 P, a composition of the n-type cladding layer is expressed as (Al xn Ga 1-xn ) 0.5 In 0.5 P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (Al xp Ga 1-xp ) 0.5 In 0.5 P (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp.

SEMICONDUCTOR INTERBAND LASERS AND METHOD OF FORMING

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal. 1. A semiconductor interband laser comprising:a first cladding layer formed using a metal material having a first permittivity;a second cladding layer formed using a metal material having a second permittivity; anda waveguide core having a waveguide core permittivity and being positioned between the first and the second cladding layers, the waveguide core including an active region to generate light based on interband transitions, the light defining a lasing wavelength;wherein the first permittivity and second permittivity are lower than the waveguide core permittivity.2. The semiconductor interband laser of claim 1 , wherein the waveguide core further includes one or more separate confinement regions positioned between the active region and first cladding layer and the active region and the second cladding layer claim 1 , the one or more separate confinement regions including one or more layers of semiconductor material having a permittivity higher than the first and second permittivity.3. The semiconductor interband laser of claim 2 , wherein the semiconductor material forming the one or more separate confinement ...

Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions. 1. An optical device comprising:a gallium and nitrogen containing substrate including a {20-21} crystalline surface region orientation;an n-type cladding material overlying the n-type gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;an active region comprising at least three quantum wells, each of the quantum wells having a thickness of 1 nm and greater, and at least two barrier layers, each of the barrier layers having a thickness ranging from about 1.5 nm to about 5 nm, each of the barrier layers being configured between a pair of quantum wells;a p-type cladding material overlying the active region, the p-type cladding material being substantially free from an aluminum bearing material; andwherein the active region is configured to operate at a forward voltage of less than 7 v for an output power of 60 mW and greater.2. The device of wherein the active region comprises at least three quantum well regions; and further comprises a p++ contact region overlying the p-type cladding material; wherein the substantially free from the aluminum bearing material is about 2% and less atomic percent.3. The device of wherein the active region comprises at least four quantum well regions; and further comprises a p++ contact region overlying the p-type cladding material; wherein the substantially free from aluminum bearing material is about 1 and less atomic percent.4. The device of wherein the active region comprises at least four quantum wells.5. The device of wherein the active region comprises at least five quantum wells.6. The device of wherein the active region comprises at least six quantum wells.7. The device of wherein the active region comprises at least seven quantum wells.8. The device of wherein the barrier layers are at least about 2.5 nm to about 3.5 nm in thickness.9. ...

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing a laser diode device , the method comprising:providing a gallium and nitrogen containing substrate having a surface region;forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer ...

SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids. 1. A surface emission laser formed of a group III nitride semiconductor comprising:a first conductivity type first clad layer;a first conductivity type first guide layer on the first clad layer;a light-emitting layer on the first guide layer;a second guide layer on the light-emitting layer; anda second conductivity type second clad layer on the second guide layer, the second clad layer having a conductivity type opposite to the first conductivity type,wherein:the first guide layer or the second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer, andthe voids have a polygonal prism structure or an oval columnar structure having a polygonal shape or an oval shape with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids by an inclination angle a2. The surface emission laser according to claim 1 , wherein the surface parallel to the first guide layer is a (0001 ...

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

LED WITH EMITTED LIGHT CONFINED TO FEWER THAN TEN TRANSVERSE MODES

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device. 1. A method for manufacturing a light emitting device comprising:providing a substrate, the substrate having a substrate area comprising a substrate length and a substrate width;forming a first active layer on the substrate, at least a first portion of the first active layer comprising a first electrical polarity;forming a light emitting region on the first active layer, the light emitting region being configured to emit light with a target wavelength between 200 nm and 300 nm;forming a second active layer on the light emitting region, at least a first portion of the second active layer comprising a second electrical polarity;forming a first electrical contact layer on the second active layer; a mesa area comprising a mesa length and a mesa width, the mesa area being smaller than the substrate area, and the mesa width being smaller than 10 times the target wavelength and confining the emitted light from the light emitting region to fewer than 10 transverse modes;', 'a second portion of the first active layer having an area that is equal to the mesa area;', 'a second portion of the light ...

LIGHT EMITTING DEVICE AND PROJECTOR

Ina light emitting device, a first diametrical size that is the largest size of a columnar part between a substrate side of a light emitting layer and an opposite side of the substrate, the columnar part has a size no larger than the first diametrical size in an area between the substrate side of the light emitting layer and the substrate side of a first semiconductor layer, the columnar part has a size smaller than the first diametrical size in the area between the substrate side of the light emitting layer and the substrate side of the first semiconductor layer, the columnar part has a size no larger than the first diametrical size in an area between the opposite side to the substrate of the light emitting layer, and an opposite side to the substrate of a second semiconductor layer, and the columnar part has a size smaller than the first diametrical size in the area between the opposite side to the substrate of the light emitting layer in the laminating direction, and the opposite side to the substrate of the second semiconductor layer. 1. A light emitting device comprising:a substrate; anda laminated structure provided to the substrate, and including a plurality of columnar parts, wherein a first semiconductor layer,', 'a second semiconductor layer different in conductivity type from the first semiconductor layer, and', 'a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer,, 'the columnar part includes'}the first semiconductor layer is disposed between the substrate and the light emitting layer,defining a largest diametrical size of the columnar part between an end at the substrate side of the light emitting layer in a laminating direction of the first semiconductor layer and the light emitting layer, and an end at an opposite side to the substrate of the light emitting layer in the laminating direction as a first diametrical size,the columnar part has a diametrical size no larger than the first diametrical size ...

Semiconductor devices with depleted heterojunction current blocking regions

A semiconductor device includes an upper and lower mirror. At least one active region for light generation is between the upper and lower mirror. At least one cavity spacer layer is between at least one of the upper and lower mirror and the active region. The device includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) including a depleting impurity is within the outer current blocking region of ≧1 of the upper mirror, lower mirror, and the first active region. A middle layer including a conducting channel is within the inner mode confinement region that is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during normal operation of the light source.

Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission. 1.A highly stable semiconductor laser , comprising:a laser cavity comprising a narrow-ridge waveguide and having a first highly reflective end thereof and a second highly reflective end thereof, the reflectivity of the first and second ends thereof being configured to prevent light emitted from the laser cavity from being fed back into the laser cavity as a result of interactions with external optical elements; anda passive waveguide that runs parallel to the narrow ridge of the laser cavity over a predefined portion of the laser cavity so as to allow the passive waveguide to controllably receive a predetermined fraction of the light emitted from the laser cavity;wherein the predetermined fraction of light from the laser is evanescently coupled to the passive waveguide for output from the highly stable laser.21. The highly stable semiconductor laser according to claim , wherein the first and second ends of the laser cavity comprise a first end facet which is coated for high reflection at the first end thereof and a second end facet which is coated for high reflection at the ...

LASER DIODE WITH IMPROVED ELECTRICAL CONDUCTION PROPERTIES

The invention relates to a laser diode () which has at least one active layer () which is arranged within a resonator () and is operatively connected to a outcoupling element (), and further at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along a longitudinal axis (X) of the active layer () is less than 20 μm, and a projection of the resistor elements () on the active layer () along the first axis (Z) overlap with at least 10% of the active layer (). 110. A laser diode () comprising:{'b': 12', '14', '16', '18', '12', '14', '20', '22', '1', '12', '20', '2', '12', '22', '18', '1', '12', '20', '22', '22', '24', '26', '24', '3', '24', '1', '12', '24', '12', '1', '12, 'at least one active layer () disposed within a resonator () and operatively connected to an outcoupling element (), at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the maximum width (W) of the active layer () in the first section () differs from the maximum width (W) of the active layer () in the second section (), and a projection of the contact layer () along a first axis (Z) extending perpendicular to the active layer (), overlaps with the first section () as well as with the second section (), wherein, the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along ...

LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source. 1. A semiconductor vertical resonant cavity light source , comprising:an upper p-type mirror (upper mirror) and a lower n-type mirror (low mirror);an active region for light generation between said upper mirror and said lower mirror;said light source including an inner mode confinement region and an outer current blocking region;said outer current blocking region comprising a common epitaxial layer that includes an epitaxially regrown interface extending over said inner mode confinement region and over said outer current blocking region which is between said active region and said upper mirror,a conducting channel comprising acceptor impurities in said inner mode confinement region of said common epitaxial layer;wherein said outer current blocking region provides a PNPN current blocking region comprising said upper mirror, a first impurity doped region comprising donor impurities between said epitaxially regrown interface and said active region, a second impurity doped region comprising acceptor impurities between said first ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer. 1. A semiconductor laser device comprising:a first conductivity type semiconductor substrate;a first conductivity type cladding layer laminated on the semiconductor substrate;a first light guide layer laminated on the first conductivity type cladding layer;a first conductivity type low refractive index layer, having a lower refractive index than the refractive index of the first conductivity type cladding layer, disposed between the first conductivity type cladding layer and the first light guide layer;an active layer laminated on the first light guide layer;a second light guide layer laminated on the active layer; and a higher-order mode of oscillation is supported in the semiconductor laser in crystal growth direction of the active layer,', 'the first light guide layer is thicker than the second light guide layer,', 'the refractive index of the second light guide layer is higher than the refractive index of the first light guide layer, and', 'the refractive index of the second conductivity type cladding layer is higher than the refractive index of ...

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Stabilized diode laser

A process for creating a stabilized diode laser device is disclosed, where the stabilized diode laser device includes a unibody mounting plate and several chambers aligned along a transmission axis. Various optic components are placed in the chambers, and based on a transmission through the chambers, the optic components are aligned and secured within the chambers.

QUANTUM CASCADE LASER WITH HIGH EFFICIENCY OPERATION AND RELATED SYSTEMS AND METHODS

A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region. 1. A quantum cascade laser (QCL) comprising:a substrate; anda sequence of semiconductor epitaxial layers adjacent said substrate and defining an active region, an injector region adjacent said active region, and a waveguide optically coupled to said active region;said active region comprising a plurality of stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions, said waveguide and said active region defining a two-level ridge configuration, a first level ridge extending into said active region, a second level ridge extending to a depth less than that of the first level ridge.2. The QCL according to wherein the upper laser level has an upper laser level average coordinate and the lower laser level has a lower laser level average coordinate; and wherein the upper laser level average coordinate and the lower laser level average coordinate are derived based upon ∫xψdx; wherein ω is a given wave function of a given laser level; wherein x is a position along the QCL; and wherein dx is a differential of x.3. The QCL according to wherein said active region has a width exceeding 15 μm.4. The QCL according to wherein ...

OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed. 14-. (canceled)5. A method for manufacturing an optical device , the method comprising:{'sup': 7', '−2, 'providing a gallium nitride substrate member having a semipolar crystalline surface region, the substrate member having a thickness of less than 500 microns, the gallium and nitride substrate member characterized by a dislocation density of less than 10cm, the semipolar surface region having a root mean square surface roughness of 10 nm and less over a 5 micron by 5 micron analysis area, the semipolar surface region being characterized by a specified off-set from a (20-21) semipolar plane;'}{'sup': '−3', 'forming a surface reconstruction region overlying the semipolar crystalline surface region, the surface reconstruction region having an oxygen bearing concentration of greater than 1E17 cm;'}{'sup': −3', '−3, 'forming an n-type cladding layer comprising a first quaternary alloy, the first quaternary alloy comprising an aluminum bearing species, an indium bearing species, a gallium bearing species, and a nitrogen bearing species overlying the surface region, the n-type cladding layer having a thickness from 100 nm to 4000 nm with an n-type doping level of 1E17 cmto 6E18 cm;'}forming a first gallium and nitrogen containing epitaxial material comprising a first portion characterized by a first indium concentration, a second portion characterized by a second indium concentration, and a third portion characterized by a third indium concentration overlying the n-type cladding layer;forming an n-side separate confining heterostructure (SCH) waveguiding layer overlying the n-type cladding layer, the n-side SCH waveguide layer comprising InGaN with a molar fraction of InN of between 1% and 8% and having a thickness from 30 nm to 150 nm;forming a multiple quantum well active region overlying the n-side SCH waveguiding layer, the multiple quantum well ...

Semiconductor light-emitting device and manufacturing method for the same

The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

TECHNIQUES FOR VERTICAL CAVITY SURFACE EMITTING LASER OXIDATION

Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:a substrate;a VCSEL structure overlying the substrate, wherein the VCSEL structure comprises a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors; anda first spacer laterally enclosing the second reflector, wherein the first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.2. The VCSEL device of claim 1 , wherein the second reflector comprises a plurality of recesses disposed along the sidewall of the second reflector.3. The VCSEL device of claim 2 , wherein the first spacer continuously extends from an upper surface of the optically active region to the plurality of recesses of the second reflector.4. The VCSEL device of claim 2 , wherein the first plurality of protrusions directly contacts the plurality of recesses.5. The VCSEL device of claim 1 , further comprising:a masking layer overlying the VCSEL structure, wherein the first plurality of protrusions extends along a sidewall of the masking layer.6. The VCSEL device of claim 5 , further comprising:a second spacer laterally enclosing the first spacer and the VCSEL structure, wherein the second spacer comprises a second plurality of protrusions that extends along a sidewall of the first spacer.7. The VCSEL device of claim 6 , wherein an upper surface of the masking layer claim 6 , an upper surface of the first spacer claim 6 , and an upper surface of the second spacer are aligned.8. The ...

Cladding glass for solid-state lasers

The present disclosure relates to a glass having a refractive index of at least 1.7 as well as the use of the glass as a cladding glass of a solid-state laser. The disclosure also relates to a laser component comprising a core of doped sapphire and a cladding glass being placed on said core. The cladding glass is arranged on said core such that light exiting from the core due to parasitic laser activity can enter the cladding glass and can be absorbed there. Thus, a laser component with improved efficiency is obtained. The present disclosure also relates to a method for producing the laser component.

SEMICONDUCTOR OPTICAL APPARATUS

A semiconductor optical apparatus is disclosed, wherein the semiconductor optical apparatus comprises a first waveguide region defining a first mode size and a second active waveguide region defining a second mode size being smaller than the first mode size. The second active waveguide region is optically coupled to the first waveguide region and the second active waveguide region comprises a lower multiple quantum well layer and an upper multiple quantum well layer located above the lower multiple quantum well layer. The lower multiple quantum well layer is physically separated from the upper multiple quantum well layer by a spacer layer. The upper multiple quantum well layer comprises a mode transformation region configured to reduce the size of an optical mode from the first mode size to the second mode size. 1. A semiconductor optical apparatus , comprising:a first waveguide region defining a first mode size; anda second active waveguide region defining a second mode size smaller than the first mode size, wherein the second active waveguide region is optically coupled to the first waveguide region and wherein the second active waveguide region comprises a lower multiple quantum well layer and an upper multiple quantum well layer located above the lower multiple quantum well layer,wherein the lower multiple quantum well layer is physically separated from the upper multiple quantum well layer by a spacer layer, andwherein the upper multiple quantum well layer comprises a mode transformation region configured to reduce a size of an optical mode from the first mode size to the second mode size.2. The semiconductor optical apparatus of claim 1 , wherein the first waveguide region is a first waveguide active region comprising a further multiple quantum well layer and wherein a modal index defined by the further multiple quantum well layer is substantially equal to a modal index defined by the lower multiple quantum well layer.3. The semiconductor optical apparatus of ...

OPTICAL MODULE

An optical module includes a waveguide interposer and at least one light source unit. The waveguide interposer includes at least one input terminal, at least one waveguide channel, and at least one output terminal. The at least one input terminal is configured to receive laser light, and the at least one waveguide channel is coupled to the at least one input terminal and is configured to guide the laser light. Each light source unit is configured to output the laser light to a corresponding input terminal of the at least one input terminal. 1. An optical module , comprising: at least one input terminal, configured to receive laser light;', 'at least one waveguide channel, coupled to the at least one input terminal, and configured to guide the laser light; and', 'at least one output terminal; and, 'a waveguide interposer, comprisingat least one light source unit, wherein each light source unit in the at least one light source unit is configured to output the laser light to a corresponding input terminal of the at least one input terminal.2. The optical module according to claim 1 , wherein each light source unit in the at least one light source unit comprises:a laser light source, configured to generate the laser light; anda lens, configured to adjust a travel direction of the laser light.3. The optical module according to claim 2 , wherein each light source unit in the at least one light source unit further comprises an optical isolator claim 2 , disposed between the lens and a corresponding input terminal in the at least one input terminal claim 2 , and configured to reduce reflected light generated when the laser light enters the corresponding input terminal.4. The optical module according to claim 2 , wherein the lens is further configured to keep light beams of the laser light concentrated in a travel process to match a spot mode field of a waveguide.5. The optical module according to claim 1 , wherein the at least one input terminal comprises at least one first ...

Quantum cascade laser

A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω 1 and second pump light of a frequency ω 2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ω by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.

LASER ELEMENT AND LASER DEVICE

The coordinates of an unit configuration region R is (X1, Y1), and the coordinates of an unit configuration region Rmn is (Xm, Yn) (m and n are natural numbers). Rotation angles φ with respect to a center of apexes of an isosceles triangle are different according to coordinates, and at least three different rotation angles φ are contained in all of the photonic crystal layer. 1: A laser element including a photonic crystal layer on which laser light is incident , whereinthe photonic crystal layer comprises:a base layer formed of a first refractive index medium; anda plurality of different refractive index regions formed of a second refractive index medium having a refractive index different from that of the first refractive index medium and disposed in the base layer,the plurality of different refractive index regions has a plane shape that is an approximate triangle, an approximate ellipse in which a flatness ratio is not zero, or a non-rotational symmetric shape,a unit configuration region is formed of one different refractive index region, in the unit configuration region, a rotation angle of one point on a contour of the plane shape with respect to a central position of the different refractive index region is denoted by φ,in an XY plane including an X axis and an Y axis, a plurality of the unit configuration regions is two-dimensionally arranged,XY coordinates of each of the unit configuration regions is given to a central position of the different refractive index region,when the XY coordinates of the unit configuration region are (X, Y), the rotation angle φ are different depending on positions, and at least three different rotation angles φ are contained in all of the photonic crystal layer.2: The laser element according to claim 1 , further comprising:an active layer configured to emit the laser light;upper and lower cladding layers between which the active layer is interposed; andthe photonic crystal layer disposed between the upper or lower cladding layer ...

MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER

A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described. 1. A monolithic diode laser configuration , comprising:a common carrier substrate; and an epitaxial substrate; and', 'a multilayered epitaxial structure applied on said epitaxial substrate such that said epitaxial substrate is not completely covered by said multilayered epitaxial structure, said multilayered epitaxial structure having at least one p-doped cladding layer and at least one n-doped cladding layer, wherein said multilayered epitaxial structure having a p-type contact window for electrically contacting said p-doped cladding layer and disposed on a front side of said multilayered epitaxial structure and wherein said epitaxial substrate having an n-type contact window for electrically contacting said n-doped cladding layer and disposed on a front side on said epitaxial substrate in a region in which said epitaxial substrate is not covered by said multilayered epitaxial structure., 'a plurality of individual emitters disposed alongside one another on said common carrier substrate and each having contact windows for electrical contacting, said contact windows disposed at a front side of said individual emitters opposite said common carrier substrate, each of said individual emitters containing2. The monolithic diode laser configuration according to claim 1 , further comprising a bond plane claim 1 , said individual emitters are connected to said common carrier substrate indirectly via said bond plane disposed between said individual emitters and said common carrier substrate.3. The monolithic diode ...

Method for Making a Semiconductor Laser Diode, and Laser Diode

A method for making a laser diode with a distributed grating reflector (RT) in a planar section of a semiconductor laser with stabilized wavelength includes providing a diode formed by a substrate (S), a first cladding layer (CL1) arranged on the substrate (S), an active layer (A) arranged on the first cladding layer (CL1) and adapted to emit a radiation, and a second cladding layer (CL2) arranged on the active layer (A), said cladding layers (CL1, CL2) being adapted to form a heterojunction to allow for efficient injection of current into the active layer (A) and optical confinement, and a contact layer. The manufacturing method provides for creating, on a first portion (ZA) of the device, a waveguide (GO) for confinement of the optical radiation and, on the remaining portion (ZP) of the device, two different gratings for light reflection and confinement. The two gratings define two different zones (R1, R2), wherein the first zone (R1) includes a grating of low order and high duty cycle, and is intended for reflection, and the second zone (R2) includes a grating of the same order, or a grating of a higher order than the previous one, and low duty cycle, and is mainly intended for light confinement. The waveguide (GO) for confining the optical radiation is implemented through a lithography and a subsequent etching, whereas the grating (RT) requires a high-resolution lithography and a shallow etching starting from a planar zone.

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t′, 6×10m Подробнее

SEMICONDUCTOR LASER HAVING IMPROVED INDEX GUIDING

A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section. 116.-. (canceled)17. A semiconductor laser comprising:a main body,a strip having a narrower width provided on the main body, andan active zone that generates light radiation,wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.18. The semiconductor laser as claimed in claim 17 , wherein the active zone is arranged at least partly or completely in the strip or in the main body.19. The semiconductor laser as claimed in claim 17 , wherein the cavity is formed from a porous and/or fissured material.20. The semiconductor laser as claimed in claim 17 , wherein the cavity is arranged in a manner adjoining a corner region between a top side of the main body and a side surface of the strip.21. The semiconductor laser as claimed in claim 17 , wherein the cavity extends over an entire side length of the strip.22. The semiconductor laser as claimed in claim 17 , wherein the cavity extends over an entire height of the side surface of the strip claim 17 , the protective layer is at a lateral distance from the side surface of the strip claim 17 , and a gap between the protective layer and the strip is covered by the electrical contact.23. The semiconductor laser as ...

QUANTUM CASCADE LASER

A quantum cascade laser includes a substrate having first and second substrate regions arranged along a first axis; a laser structure body including a laser body region having laser waveguide structures extending along the first axis, the laser structure body including first and second regions respectively including the first and second substrate regions, the laser body region having an end facet located at a boundary between the first and second regions, the second region including a terrace extending along the first axis from a bottom edge of the end facet; a plurality of first electrodes disposed on the laser waveguide structures; a plurality of pad electrodes disposed on the terrace; and a plurality of wiring metal bodies each of which includes a first portion on the terrace and a second portion on the end facet. The pad electrodes are connected with the first electrodes through the wiring metal bodies, respectively. 1. A quantum cascade laser comprising:a substrate having a first substrate region and a second substrate region arranged along a first axis;a laser structure body including a laser body region disposed on the first substrate region, the laser structure body including a first region including the first substrate region and a second region including the second substrate region, the laser body region having a plurality of laser waveguide structures extending along the first axis, the laser body region having an end facet located at a boundary between the first region and the second region, the second region including a terrace extending along the first axis from a bottom edge of the end facet;a plurality of first electrodes each of which is disposed on one of the plurality of laser waveguide structures;a plurality of pad electrodes disposed on the terrace; anda plurality of wiring metal bodies each of which includes a first portion disposed on the terrace, and a second portion disposed on the end facet,wherein each of the plurality of pad electrodes is ...

MODULATED LASER SOURCE AND METHODS OF ITS FABRICATION AND OPERATION

A modulated semiconductor laser source includes a waveguide on a semiconductor substrate; first and second reflectors; a laser electrode; an optical modulator; and a laser-electrode electrical circuit. The reflectors and a resonator segment of the waveguide define a laser resonator with laser output transmitted through the second reflector. The laser electrode is positioned over the resonator segment and a laser current flows through the laser electrode into the resonator segment to produce optical gain. The modulator receives and modulates the laser output, in response to a primary modulation signal, to produce a modulated output optical signal. The laser-electrode circuit is coupled to the laser electrode and derives from the primary modulation signal a laser-electrode secondary modulation current, optimized to reduce chirp in the modulated output signal, that flows through the laser electrode into or out of the resonator segment in addition to the laser current. 1. A modulated semiconductor laser source comprising:(a) an optical waveguide formed on a semiconductor substrate;(b) first and second optical reflectors arranged on the substrate or waveguide so that the first and second reflectors and a resonator segment of the waveguide define a laser resonator arranged so that laser output from the laser resonator is transmitted through the second reflector;{'sub': 1', '1, '(c) a laser electrode positioned over at least a portion, of length L, of the resonator segment of the waveguide, the laser electrode being arranged so as to enable a substantially constant laser current Ito flow through the laser electrode into the resonator segment of the waveguide and produce optical gain therein;'}(d) an optical modulator optically coupled to the laser resonator so as to receive at least a portion of the laser output and to modulate the laser output, in response to a time-varying primary modulation signal applied to the optical modulator, to produce a modulated output optical ...

Mode Control in Vertical-Cavity Surface-Emitting Lasers

Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

SEMICONDUCTOR INTEGRATED CIRCUIT AND METHODOLOGY FOR MAKING SAME

Integrated circuitry is fabricated from semiconductor layers formed on a substrate, which include at least one n-type layer, an inverted p-type modulation doped quantum well (mod-doped QW) structure, a non-inverted n-type mod-doped QW structure, and at least one p-type layer including a first P+-type layer formed below a second P-type layer. An etch operation exposes the second p-type layer. P-type ions are implanted into the exposed second p-type layer. A gate electrode of a n-channel HFET device is formed in contact with the p-type ion implanted region. Source and drain electrodes of the n-channel HFET device are formed in contact with n-type ion implanted regions formed in contact with the n-type mod-doped QW structure. P-channel HFET devices, complementary BICFET devices, stacked complementary HFET devices and circuits and/or logic gates based thereon, and a variety of optoelectronic devices and optical devices can also be formed as part of the integrated circuitry. 1. A method of forming an integrated circuit comprising:depositing or providing a plurality of semiconductor layers supported on a substrate, wherein the plurality of semiconductor layers includes i) at least one n-type layer, ii) an inverted p-type modulation doped quantum well structure formed above the at least one n-type layer, wherein the inverted p-type modulation doped quantum well structure includes at least one pair of quantum well layer and barrier layer disposed above a p-type charge sheet, iii) a non-inverted n-type modulation doped quantum well structure formed above the inverted p-type modulation doped quantum well structure, wherein the non-inverted n-type modulation doped quantum well structure includes an n-type charge sheet disposed above least one pair of quantum well layer and barrier layer, and iv) at least one p-type layer disposed above the non-inverted n-type modulation doped quantum well structure, wherein the at least one p-type layer includes a first p-type layer of ...

METHODS OF PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS, AND OPTOELECTRONIC SEMICONDUCTOR LASERS

An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 μm to 100 μm. 2. The optoelectronic semiconductor laser according to claim 1 , wherein the light blocking layer is a metallic layer or a metallic layer stack claim 1 , the light blocking layer having a thickness of 10 nm to 2 μm.3. The optoelectronic semiconductor laser according to claim 2 , wherein the light blocking layer is the metallic layer stack and consists of Ti and/or Cr claim 2 , the light blocking layer having a thickness of at least 50 nm.4. The optoelectronic semiconductor laser according to claim 2 , wherein an electrically insulating layer is situated at a side of the light blocking layer facing the semiconductor layer sequence as well as at a side of the light blocking layer facing away from the semiconductor layer sequence.5. The optoelectronic semiconductor laser according to claim 2 , wherein an antireflection layer is applied continuously and over a whole area of the front facet claim 2 , and the light blocking layer is situated at a side of the antireflection layer facing away from the growth substrate and the semiconductor layer sequence.6. The optoelectronic semiconductor laser according to claim 2 , wherein an antireflection layer for the laser radiation ...

SEMICONDUCTOR MODIFICATION PROCESS AND STRUCTURES

There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaNand modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads. 1. A fabrication process for electronic components comprising the following steps:depositing a mask feature onto a GaN p-layer to form a structure wherein some areas of the structure are protected by the mask feature and others are not, forming unprotected mask regions; andwherein processing of unprotected mask regions is capable of forming areas with modified electrical characteristics.2. A fabrication process for electronic components according to claim 1 , wherein the processing of unprotected mask regions causes a reversal in the effective doping of the p-GaN regions such that it behaves as n-doped GaN.3. A fabrication process for electronic components according to claim 1 , wherein the process comprises:exposing the structure to a plasma treatment;wherein the areas not protected by the mask feature are exposed to the plasma treatment and form modified n-doped behaving regions due to the plasma and the areas protected by the mask are shielded from the plasma treatment and remain unmodified p-GaN.4. A fabrication process for electronic components according to claim 3 , wherein after plasma treatment claim 3 , an annealing process is applied to the structure claim 3 , and wherein optionally the mask is removed or retained ...

METHOD OF PRODUCING AN ELECTRONIC COMPONENT

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region. 117.-. (canceled)18. A method of producing an electronic component comprising:providing a surface comprising a first region and a second region adjoining the first region;arranging a sacrificial layer above the first region of the surface;arranging a passivation layer above the sacrificial layer and the second region of the surface;creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region; andremoving the sacrificial layer and the portions of the passivation layer that are arranged above the first region.19. The method according to claim 18 , wherein creating the opening in the passivation layer comprises:arranging a photoresist layer above the passivation layer;creating an opening in the photoresist layer above the first region of the surface;removing a part of the passivation layer that is arranged below the opening in the photoresist layer; andremoving the photoresist.20. The method according to claim 18 , wherein claim 18 , before arranging the sacrificial layer claim 18 , an electrically conductive layer is arranged above the first region of the surface or above the first region and the second region of the surface.21. The method according to claim 18 , wherein claim 18 , before arranging the ...

PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFICIENCY AND DROOP RATE

The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer. 1. A photonic device , comprising:an n-doped III-V group compound layer disposed over a substrate;a multiple quantum well (MQW) layer disposed over the n-doped III-V group compound layer;an electron-blocking layer disposed over the MQW layer;a p-doped III-V group compound layer disposed over the electron-blocking layer; anda hole injection layer disposed inside the p-doped III-V group compound layer or in between the electron-blocking layer and the p-doped III-V group compound layer, wherein the hole injection layer contains a p-doped III-V group compound material different from the p-doped III-V group compound layer.2. The photonic device of claim 1 , wherein the p-doped III-V group compound material of the hole injection layer includes magnesium-doped indium gallium nitride (InGaN).3. The photonic device of claim 2 , wherein a concentration of the magnesium in the InGaN is in a range from about 1.0×10ions/centimeterto about 1.0×10ions/centimeter.4. The photonic device of claim 1 , wherein a thickness of the hole injection layer is less than about 100 nanometers.5. The photonic device of claim 1 , wherein the substrate includes one of: a gallium nitride substrate claim 1 , a sapphire substrate claim 1 , a silicon substrate claim 1 , and a substrate ...

Semiconductor laser element

A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.

SEMICONDUCTOR LASER RESONATOR AND SEMICONDUCTOR LASER DEVICE INCLUDING THE SAME

A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising: a central portion; and protrusions periodically arranged around the central portion, one of the protrusions being configured to confine the laser beam as a standing wave in the one protrusion. 1. A semiconductor laser resonator configured to generate a laser beam , the semiconductor laser resonator comprising: a central portion; and', 'protrusions periodically arranged around the central portion,, 'a gain medium layer including a semiconductor material and comprisingwherein one of the protrusions is configured to confine the laser beam as a standing wave in the one protrusion.2. The semiconductor laser resonator of claim 1 , further comprising a metal layer provided outside the gain medium layer claim 1 , the metal layer being configured to confine the laser beam generated by the gain medium layer.3. The semiconductor laser resonator of claim 2 , further comprising a buffer layer provided between the gain medium layer and the metal layer claim 2 , the buffer layer being configured to buffer an optical loss of the laser beam generated by the gain medium layer.4. The semiconductor laser resonator of claim 1 , further comprising a dielectric layer provided outside the gain medium layer claim 1 , the dielectric layer being configured to confine the laser beam generated by the gain medium layer and having a refractive index different from a refractive index of the gain medium layer.5. The semiconductor laser resonator of claim 1 , wherein the central portion is configured to further confine the laser beam therein.6. The semiconductor laser resonator of claim 1 , wherein the protrusions have a same shape as each other.7. The semiconductor laser resonator of claim 1 , wherein the protrusions comprise:first protrusions each respectively having a first shape; andsecond protrusions each respectively having a second shape different ...

Semiconductor laser apparatus

According to the present invention, in a time wavelength division multiplexing-passive optical network (TWDM-PON) such as the next generation passive optical network 2 (NG-PON2) requiring a burst mode operation, in a process of manufacturing a semiconductor laser requiring selection of a very narrow wavelength, two laser waveguides having different oscillation wavelengths are formed in one laser diode chip, thereby making it possible to improve a wavelength yield of the chip. In addition, when any one laser waveguide participates in communication, a current applied to a waveguide laser that does not participate in the communication is modulated and applied to the waveguide laser, with respect to a wavelength change generated by a change in a current applied to a burst mode operation waveguide laser participating in the communication, to stabilize a wavelength of laser light oscillated from the laser waveguide participating in the communication, thereby enabling burst mode communication at a dense wavelength division multiplexing (DWDM) level.

METHOD OF FABRICATING AN OPTOELECTRONIC COMPONENT

A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region. 1. A method of fabricating an optoelectronic component within a silicon-on-insulator substrate , the method comprising:providing a silicon-on-insulator, SOI, substrate, the SOI substrate comprising a silicon base layer, a buried oxide, BOX, layer on top of the base layer, and a silicon device layer on top of the BOX layer;etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; anddepositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region,wherein the relative separation of the first active region and the second active region within the multistack epi layer is chosen based on the difference in depth of the first cavity region and the second cavity region, such that after the simultaneous deposition step, the first active region within in the ...

Vertical cavity surface emitting laser element and electronic apparatus

[Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

DIODE LASER WITH IMPROVED MODE PROFILE

A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5. 1. A diode laser , comprising:an n-type first cladding layer,an n-type first waveguide layer disposed on said first cladding layer,an active layer which is suitable for radiation generation and which is arranged on the first waveguide layer,a p-type second waveguide layer disposed on said active layer,a p-type second cladding layer disposed on said second waveguide layer,wherein between the first waveguide layer and the active layer an n-type first intermediate layer is formed as a transition region, and wherein the boundaries between the individual layers are determined by the fact that at these locations the left-hand and right-hand differential quotient of the refractive index progression differs,', 'wherein the first intermediate layer and/or the second intermediate layer is a GRIN layer,, 'between the second waveguide layer and the active layer a p-type second intermediate layer is formed as a transition region,'}the sum of the layer thickness of the first waveguide layer and the layer thickness of the second waveguide layer being greater than, the layer thickness of the ...

Semiconductor Laser

A semiconductor laser is provided with one or more rear ports and one front port and with a multi-mode interference optical waveguide that has an active layer (light emitting layer) in all regions in plan view. The front port corresponds to an imaging point at which fundamental mode light forms an image in the active layer (light emitting layer) perpendicular to the waveguide direction of the multi-mode interference optical waveguide, and in plan view the front port is disposed along a central line, off center with respect to a central line, along the waveguide direction of the multi-mode interference optical waveguide. 1. A semiconductor laser , which comprising: a single front port and a single or a plurality of rear ports provided , and a multi-mode interference optical waveguide having an active layer in an entire area thereof in an planar view ,wherein:said front port is eccentrically provided relative to a central line along a waveguide direction of said multi-mode interference optical waveguide in the planar view so as to correspond to an imaging point at which a fundamental mode light forms an image in said active layer, which is perpendicular to the waveguide direction of said multi-mode interference optical waveguide.2. The semiconductor laser as claimed in claim 1 , wherein:an amount of eccentricity of a central line of said front port relative to the central line of said multi-mode interference optical waveguide is within ±0.3 μm as a reference of one-sixth of an effective waveguide width of said multi-mode interference optical waveguide.3. The semiconductor laser as claimed in claim 1 , wherein:a layer structure of said multi-mode interference optical waveguide is a high-mesa structure.47-. (canceled)8. The semiconductor laser as claimed in claim 2 , wherein: a layer structure of said multi-mode interference optical waveguide is a high-mesa structure.9. The semiconductor laser as claimed in claim 1 , wherein:said rear port is eccentrically provided ...

Novel Photonic Device Structure And Fabrication Method Thereof

Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser. 1. A device , comprising:a substrate;a current confinement layer disposed on the substrate, the current confinement layer being doped in a pattern and configured to reduce dark current in the device;an absorption layer disposed on the current confinement layer; andan electrical contact layer disposed on the absorption layer and doped with dopants of a first polarity.2. The device of claim 1 , wherein a first portion of the current confinement layer is doped with dopants of a second polarity opposite the first polarity claim 1 , and wherein a second portion of the current confinement layer surrounding the first portion comprises an intrinsic region.3. The device of claim 2 , wherein the first portion of the current confinement layer is doped with dopants of the second polarity with a doping concentration from about 1×10to about 1×10/cm.4. The device of claim 2 , wherein the second portion of the current confinement layer is doped with dopants of the second polarity with a doping concentration has a doping concentration less than 1×10/cm.5. The device of claim 1 , wherein a first primary side of the substrate includes a recess claim 1 , and wherein the current confinement is disposed on the first primary side of the substrate in the recess.6. The device of claim 5 , wherein an exposed surface of the electrical contact layer is approximately flush with a portion of the first primary side of the substrate that is not recessed.7. The device of claim 1 , wherein the substrate comprises a bulk Si wafer a ...

METHOD, SYSTEM AND APPARATUS FOR DIFFERENTIAL CURRENT INJECTION

A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet. 1. A laser diode , comprising:a transverse waveguide including an active layer between an n-type semiconductor layer on an n-side of the transverse waveguide and a p-type semiconductor layer on a p-side of the transverse waveguide wherein the transverse waveguide is bounded on the n-side by a lower index n-cladding layer and on the p-side by a lower index p-cladding layer;a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet; anda first contact layer configured to vary an amount of current injected into the cavity in the longitudinal direction so as to inject more current at the first end than at the second end.2. The laser diode of claim 1 , wherein the first contact layer is disposed on an n-side of the transverse waveguide.3. The laser diode of claim 1 , wherein the first contact layer is disposed on p-side of the transverse waveguide.4. The laser diode of claim 1 , wherein the first contact layer comprises a substantially uniform thickness.5. The laser diode of claim 1 , wherein the first contact layer comprises a material ...

Optical modulator having reflection layers

An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.

LIGHT EMITTING DEVICE

A light emitting device includes: one or more semiconductor laser elements, each configured to emit laser light; one or more light-reflecting parts, each having a light-reflecting surface configured to reflect the laser light emitted from a corresponding one of the one or more semiconductor laser elements; and a fluorescent part having a light-receiving surface configured to be irradiated with the laser light reflected at the light-reflecting surface of each of the one or more light-reflecting parts; wherein an irradiated region is formed on the light-reflecting surface when the light-reflecting surface is irradiated with the laser light, the irradiated region including a first end and a second end opposite the first end; and wherein the light-reflecting surface of each of the one or more light-reflecting parts is arranged such that a portion of the laser light reflected at at least a first end of the irradiated region and a portion of the laser light reflected at a location other than the first end of the irradiated region are overlapped with each other on the light-receiving surface. 1. A light emitting device comprising:one or more semiconductor laser elements, each configured to emit laser light;one or more light-reflecting parts, each having a light-reflecting surface configured to reflect the laser light emitted from a corresponding one of the one or more semiconductor laser elements; anda fluorescent part having a light-receiving surface configured to be irradiated with the laser light reflected at the light-reflecting surface of each of the one or more light-reflecting parts;wherein an irradiated region is formed on the light-reflecting surface when the light-reflecting surface is irradiated with the laser light, the irradiated region including a first end and a second end opposite the first end; andwherein the light-reflecting surface of each of the one or more light-reflecting parts is arranged such that a portion of the laser light reflected at at least a ...

DIODE LASER PACKAGES WITH FLARED LASER OSCILLATOR WAVEGUIDES

A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package. 1. A high brightness diode laser package , comprising:a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions;a plurality of optical components situated to receive the laser beams from said plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship; andan optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.2. The package of wherein said plurality of flared laser oscillator waveguides includes a first set of three or more of said flared laser oscillator waveguides arranged on a first stepped surface portion of said stepped surface at successive heights thereof such that a first set of beams is emitted parallel to each other and said first stepped surface portion in a first stepped configuration in a first emission direction;wherein said plurality of optical components includes a first set of optical components associated with said first set of three or more flared laser oscillator waveguides, said first set of optical components including fast-axis collimation optics and slow-axis collimation optics for collimating the respective fast and slow axes of the first set of beams and beam-turning optics coupled to each first set beam so as to provide each first set beam in a first set turn direction such that the first stepped configuration of beams becomes a first stacked ...

Grating with plurality of layers

A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER

A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. 1. A quantum cascade laser element comprising:a super lattice formed by a crystal of a nitride semiconductor;the super lattice having a plurality of unit structures, each of which includesa first barrier layer;a first well layer stacked on the first barrier layer;a second barrier layer stacked on the first well layer; anda second well layer stacked on the second barrier layer, the barrier layers and the well layers having high and low potentials, respectively, relative to potentials of conduction-band electrons of the crystal, a mediation level that has a significant probability of finding an electron in at least one of the first well layer and the second well layer;', 'an upper lasing level that has a significant probability of finding an electron in the first well layer; and', 'a lower lasing level that has a significant probability of finding an electron in the second well layer,, 'each unit structure including an energy level structure for electrons under a bias electric field in a stacking direction due to external voltage, the energy level structure havingunder the bias electric field, an energy value of the ...

Semiconductor devices with depleted heterojunction current blocking regions

A semiconductor heterostructure device includes a middle layer including an inner conducting channel and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region. The DHCBR includes a first depleting impurity specie including a Column II acceptor, and a second depleting impurity comprising oxygen which increases a depletion of the DHCBR so that the DHCBR forces current to flow into the conducting channel during electrical biasing under normal operation of the semiconductor heterostructure device.