Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 3061. Отображено 100.
26-01-2012 дата публикации

Surface emitting laser, light source, and optical module

Номер: US20120020383A1
Автор: Hitoshi Shimizu, Yasumasa Kawakita
Принадлежит: Furukawa Electric Co Ltd

A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

Подробнее
Номер записи: 1
01-03-2012 дата публикации

Serially interconnected vertical-cavity surface emitting laser arrays

Номер: US20120051384A1
Автор: Chad Shin-deh Wang, Jonathan C. Geske, Michael MacDougal
Принадлежит: Aerius Photonics LLC

Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Подробнее
Номер записи: 2
19-04-2012 дата публикации

Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array

Номер: US20120093188A1
Автор: Mitsuhiro Ikuta
Принадлежит: Canon Inc

There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

Подробнее
Номер записи: 3
03-05-2012 дата публикации

High fill-factor efficient vertical-cavity surface emitting laser arrays

Номер: US20120106585A1
Автор: Chad Wang, Jonathan Geske
Принадлежит: Individual

An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

Подробнее
Номер записи: 4
28-02-2013 дата публикации

Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device

Номер: US20130051421A1
Автор: Silke Traut, Stephanie Saintenoy
Принадлежит: Individual

A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

Подробнее
Номер записи: 5
16-05-2013 дата публикации

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Номер: US20130122617A1
Автор: James A. Lott, Nikolai Ledentsov, Vitaly Shchukin
Принадлежит: CONNECTOR OPTICS LLC

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

Подробнее
Номер записи: 6
19-09-2013 дата публикации

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

Номер: US20130243023A1
Автор: Takashi Kondo
Принадлежит: Fuji Xerox Co Ltd

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

Подробнее
Номер записи: 7
07-01-2021 дата публикации

Self-Mixing Interference Device for Sensing Applications

Номер: US20210003385A1
Автор: DRADER MARC A., LAFLAQUIERE Arnaud, Li Weiping, Lin Chin Han, Lyon Keith, Tan Fei
Принадлежит:

Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode. 1. A self-mixing interferometry (SMI) sensor , comprising:a vertical cavity surface emitting laser (VCSEL) diode; anda resonant cavity photodetector (RCPD) laterally adjacent to the VCSEL diode;wherein:the VCSEL diode and the RCPD include a common set of semiconductor layers formed on a common substrate;the common set of semiconductor layers includes an active region layer;the VCSEL diode and the RCPD are at least partially separated by a trench extending at least partially through the common set of semiconductor layers, the trench extending through the active region layer; andthe VCSEL diode comprises additional semiconductor layers stacked with the common set of semiconductor layers.2. The SMI sensor of claim 1 , wherein:the additional semiconductor layers comprise an etch stop layer adjacent to the common set of semiconductor layers; anda bias supply electrical contact is connected to a layer of the additional semiconductor layers farthest from the common set of semiconductor layers.3. The SMI sensor of claim 2 , wherein the additional semiconductor layers are formed on the common set of semiconductor layers.4. The SMI sensor of claim 1 , wherein:the VCSEL ...

Подробнее
Номер записи: 8
05-01-2017 дата публикации

TUNABLE OPTICAL PHASE FILTER

Номер: US20170005455A1
Автор: PADULLAPARTHI BABU DAYAL
Принадлежит:

An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width. 1. A vertical cavity surface-emitting laser element (VCSEL) , comprising:a top distributed Bragg reflector (DBR) and a bottom DBR each made with multiple layers of semiconductor thin films;{'sub': x', 'y, 'an active region having at least one quantum well and at least one quantum well barrier each having a thickness of 3-10 nm formed between the top DBR and the bottom DBR, the at least one quantum well comprising InGaAs with an In composition of 0.04-0.12, the at least one quantum well barrier comprising AlGaAs where x is between 0.3-0.4 or GaAsPwhere y is between 0.2-0.3, wherein the at least one quantum well is adjusted for a photoluminescence emission target between 835-840 nm; and'}a surface relief structure formed on at least the top-most layer of the top DBR by dry or wet etching of semiconductor or dielectric thin films, wherein the surface relief structure has a depth of 20-150 nm and a diameter of 2-6 um, and the top surface of the top-most layer is terminated (1) either in-phase or anti-phase in relation to a standing ...

Подробнее
Номер записи: 9
07-01-2016 дата публикации

SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS

Номер: US20160006214A1
Автор: Kondo Takashi, TAKEDA Kazutaka
Принадлежит: FUJI XEROX CO., LTD.

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode. 1a substrate;a first semiconductor multilayer reflector formed on the substrate, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index;an active region formed on or above the first semiconductor multilayer reflector;a second semiconductor multilayer reflector formed on or above the active region, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index; anda cavity extending region formed between the first semiconductor multilayer reflector and the active region or between the second semiconductor multilayer reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, and including a conductive semiconductor material,wherein the cavity extending region includes a first optical loss causing ...

Подробнее
Номер записи: 10
07-01-2021 дата публикации

ELECTRICALLY PUMPED PHOTONIC-CRYSTAL SURFACE-EMITTING LASERS WITH OPTICAL DETECTOR

Номер: US20210006039A1
Автор: CHEN YU-CHEN, LIN KUO-JUI
Принадлежит:

An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser. 1. An electrically pumped photonic-crystal surface-emitting lasers with optical detector , comprising:a substrate having a top surface and a bottom surface;a first cladding layer arranged on the top surface of the substrate;an active layer with a quantum structure arranged on the first cladding layer;a second cladding layer arranged on the active layer;a contact layer arranged on the second cladding layer in a shape of the mesa and including a plurality of air holes, by the variation of position and size proportion of the air holes form a photonic crystal structure having main structure and substructure, and the main structure further having a first area on a top surface of the main structure and having a light guiding tunnel on the substructure;an electrical current confining structure arranged on the photonic crystal structure and on the active layer and including an opening corresponding to the first area on the photonic crystal structure, so as to confine the electrical currents within the first area;a transparent conducting layer arranged on the electrical currents confining structure and including a second area on a top surface thereof, covering the active layer of the photonic crystal structure and having the second area vertically aligned with the first area;a first metal electrode arranged on the transparent conducting layer with an aperture aligned with the second area of the transparent conducting layer to avoid ...

Подробнее
Номер записи: 11
07-01-2021 дата публикации

LIGHT EMISSION DEVICE COMPRISING AT LEAST ONE VCSEL AND A SPREAD LENS

Номер: US20210006041A1
Автор: SCIANCALEPORE Corrado
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A light-emitting device includes a vertical-cavity surface-emitting laser, the resonant cavity of which is transverse multimode supporting transverse modes having rotational symmetry of order two about a main optical axis, and an index-contrast grating including a plurality of pads. The pads include: a central pad, a plurality of peripheral pads, which are periodically arranged along one or more lines that are concentric with respect to the central pad, and which are arranged so that the grating has, with respect to the main optical axis, a rotational symmetry of uneven order higher than or equal to three. 112-. (canceled)13. A device for emitting a light beam , comprising:a vertical-cavity surface-emitting laser comprising a resonant cavity that extends along a main optical axis and that is bounded by two mirrors a top mirror of which defines an emission surface,the resonant cavity being configured to support a plurality of transverse optical modes, including a fundamental transverse mode and transverse modes of higher order having a rotational symmetry of order two about the main optical axis;an index-contrast grating forming a diffusion lens, said grating being arranged on the emission surface and comprising a plurality of pads that are separate from one another and that are made of at least one material of a first refractive index, said pads being encircled by a medium of a second refractive index different from the first index, said pads including:a central pad, which is centered on the main optical axis, anda plurality of peripheral pads, which are periodically arranged along one or more lines that are concentric with respect to the central pad, and which are arranged so that the grating has, with respect to the main optical axis, a rotational symmetry of uneven order higher than or equal to three.14. The device as claimed in claim 13 , wherein claim 13 , for a concentric line said to be of rank 1 arranged facing the central pad claim 13 , a radial period is ...

Подробнее
Номер записи: 12
03-01-2019 дата публикации

Vertical cavity surface emitting laser and method for manufacturing the same, electronic apparatus, and printer

Номер: US20190006820A1
Автор: Masamitsu Mochizuki
Принадлежит: Seiko Epson Corp

A vertical cavity surface emitting laser includes a base and a layered element provided on the base. The layered element includes a first mirror layer, a second mirror layer, and an active layer provided between the first mirror layer and the second mirror layer. The layered element further includes a light exiting section via which light produced in the active layer exits. The light exiting section is an outermost surface of an AlGaInP layer or an AlGaAsP layer.

Подробнее
Номер записи: 13
08-01-2015 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150010032A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит: SONY CORPORATION

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 226-. (canceled) This is a Continuation of application Ser. No. 12/078,681, filed on Apr. 3, 2008. The present invention contains subject matter related to Japanese Patent Application JP 2007-109654 filed in the Japanese Patent Office on Apr. 18, 2007, the entire contents of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to a light-emitting element and a method for manufacturing the same.2. Description of the Related ArtIn a surface-emitting laser element, on a substrate, for example, an active layer having a multiple quantum well structure is disposed in a cavity sandwiched between two mirror layers provided on upper and lower sides thereof, light emitted from the active layer under current injection is confined, and thus laser oscillation is caused. In such a surface-emitting laser element, a cylindrical mesa structure is usually employed, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 2005-026625. Specifically, for example, a cylindrical mesa structure with a diameter of about 30 μm is formed by dry etching or ...

Подробнее
Номер записи: 14
10-01-2019 дата публикации

SINGLE MODE VERTICAL-CAVITY SURFACE-EMITTING LASER

Номер: US20190013646A1
Автор: MATHAI Sagi V., Sorin Wayne V., Tan Michael Renne Ty
Принадлежит:

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted by the VCSEL through the substrate. The VCSEL lases in a single transverse mode. 1. A vertical-cavity surface-emitting laser (VCSEL) comprising:a first reflector having a first reflectivity;a second reflector having a second reflectivity, wherein the second reflectivity is less than the first reflectivity;a light generation region between the first and second reflectors; anda substrate having a first surface and a second surface, wherein the first surface is coupled to the second reflector, and wherein the second surface is formed into a lens shape to act upon light emitted by the VCSEL through the substrate,wherein the VCSEL lases in a single transverse mode.2. The VCSEL of claim 1 , further comprising an oxide layer having an aperture with an aperture diameter in a central area of the oxide layer claim 1 ,wherein the aperture in the oxide layer has a higher refractive index than the surrounding oxide layer; the oxide layer is located at or near a null of a standing wave in the VCSEL; and a center of the oxide layer is approximately aligned with a central axis of the first reflector, the light generation region, the second reflector, and the substrate.3. The VCSEL of claim 2 , wherein the first reflector is a distributed Bragg reflector and comprises a first number of pairs of semiconductor layers in a central region of the first reflector and a second number of pairs of semiconductor layers in an outer region surrounding the central region claim 2 , wherein the first number of pairs is greater than ...

Подробнее
Номер записи: 15
09-01-2020 дата публикации

Semiconductor Device and Method

Номер: US20200014169A1
Автор: An-Jhih Su, Chen-Hua Yu, Chia-Nan Yuan, Der-Chyang Yeh, Ming Shih Yeh, Shih-Guo Shen, Yu-Hung Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

Подробнее
Номер записи: 16
19-01-2017 дата публикации

SURFACE EMITTING LASER, INFORMATION ACQUISITION APPARATUS, AND IMAGING APPARATUS

Номер: US20170018908A1
Автор: Nakanishi Koichiro
Принадлежит:

A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector. 1. A surface emission laser comprising:a first reflector;an active layer disposed on the first reflector;a first beam disposed on the active layer via a space;second reflector disposed in an opening portion formed in the first beam; andsecond beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam,wherein both ends, at least in a longitudinal direction, of the first beam are fixed ends, andwherein a length, in the longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.2. The surface emission laser according to claim 1 , further comprising an electrode disposed on the first beam claim 1 ,wherein the second reflector is not electrically connected to the electrode.3. The surface emission laser according to claim 2 , wherein the electrode is formed to be connected to the first beam in the longitudinal direction.4. The surface emission laser according to claim 2 , wherein a volume resistivity of the first beam is equal to or larger than 1×10Ωcm.5. The surface emission laser according to claim 2 , further comprising an additional electrode that forms a pair with the electrode for driving the first beam.6. The surface emission laser according to claim 1 , wherein the second reflector is not electrically connected to the first beam.7. The surface emission laser according to claim 6 , wherein a volume resistivity of the ...

Подробнее
Номер записи: 17
03-02-2022 дата публикации

SURFACE EMITTING LASER DEVICE AND SURFACE EMITTING LASER APPARATUS HAVING THE SAME

Номер: US20220037852A1
Автор: JUNG Se Yeon, Kim Seung Hwan
Принадлежит: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.

The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer. 1. A surface emitting laser device , comprising:a substrate;a first metal layer disposed on the substrate;a second metal layer disposed on the first metal layer; anda third metal layer disposed between the first metal layer and the second metal layer,wherein the first to third metal layers include different materials,wherein the second metal layer includes copper (Cu), andwherein the third metal layer prevents diffusion of copper from the second metal layer into the first metal layer.2. The surface emitting laser device of claim 1 , further comprising a fourth metal layer disposed on the second metal layer to prevent oxidation of the second metal layer.3. The surface emitting laser device of claim 2 , further comprising a fifth metal layer disposed between the second metal layer and the third metal layer to bond the second metal layer and the third metal layer.4. The surface emitting laser device of claim 3 , wherein the first metal layer has a thickness of 5 nm to 100 nm claim 3 , and the first metal layer includes at least one of AuGe claim 3 , AuNi claim 3 , nickel (Ni) claim 3 , and palladium (Pd).5. The surface emitting laser device of claim 3 , wherein the second metal layer has a thickness of 200 nm to 3000 nm claim 3 , and the third metal layer has a thickness of 5 nm to 300 nm.6. The surface emitting laser device of claim 3 , wherein the third metal layer includes at least one of nickel (Ni) claim 3 , platinum (Pt) claim 3 , tungsten (W) claim 3 , and TiW.7. The surface emitting laser device of claim 2 , wherein the fourth metal layer has a thickness of 0.3 nm to 50 nm claim 2 , and the fourth metal layer includes at least one of gold (Au) platinum (Pt) and tungsten (W).8. The surface ...

Подробнее
Номер записи: 18
03-02-2022 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER

Номер: US20220037854A1
Автор: AOKI Takeshi, Koyama Yuji, TANAKA Rei
Принадлежит: Sumitomo Electric Industries, Ltd.

A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area. 1. A vertical cavity surface emitting laser comprising:a semi-insulating substrate having a major surface including a first area and a second area;an n-type semiconductor layer provided on the first area, the n-type semiconductor layer being not provided on the second area;a semiconductor laminate provided on the n-type semiconductor layer, the semiconductor laminate including a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer;a cathode electrode connected to the n-type semiconductor layer;an anode electrode connected to a top surface of the semiconductor laminate; anda first conductor connected to the anode electrode, the first conductor extending from the first area to the second area, the first conductor including an anode electrode pad provided on the second area.2. The vertical cavity surface emitting laser according to claim 1 , wherein the second area includes a recess.3. The vertical ...

Подробнее
Номер записи: 19
22-01-2015 дата публикации

Surface-emitting laser module, optical scanner device, and image forming apparatus

Номер: US20150023381A1
Автор: Kazuhiko Adachi, Kazuhiro Harasaka, Satoru Sugawara, Shunichi Sato, Toshihiro Ishii, Yoshihiro Ohba
Принадлежит: Ricoh Co Ltd

A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

Подробнее
Номер записи: 20
28-01-2016 дата публикации

Polarization stable widely tunable short cavity laser

Номер: US20160028208A1
Автор: Alex Ezra Cable, Benjamin Michael Potsaid, Vijaysekhar Jayaraman
Принадлежит: Praevium Research Inc, Thorlabs Inc

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. A short cavity laser with a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation is disclosed. Methods for obtaining polarization stable operation of the tunable source are presented.

Подробнее
Номер записи: 21
23-01-2020 дата публикации

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER

Номер: US20200028327A1
Автор: Hirose Kazuyoshi, Kitagawa Hitoshi, LIANG Yong, Noda Susumu, Watanabe Akiyoshi
Принадлежит:

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode. 1. A two-dimensional photonic crystal surface emitting laser comprising:a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member;an active layer provided on one side of the two-dimensional photonic crystal; anda first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current through a contact layer having electrical conductivity to the active layer, a central conductor in direct contact with the contact layer,', 'a plurality of ring-shaped conductors in direct contact with the contact layer, the plurality of ring-shaped conductors arranged concentrically around the central conductor,', 'a high resistance portion provided in an inter-conductor region which is composed of a region between the central conductor and a ring-shaped conductor arranged innermost among the plurality of ring-shaped ...

Подробнее
Номер записи: 22
28-01-2021 дата публикации

Surface emitting laser and method of manufacturing the same

Номер: US20210028600A1
Автор: Tetsuya Kumano
Принадлежит: Sumitomo Electric Industries Ltd

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

Подробнее
Номер записи: 23
28-01-2021 дата публикации

A SURFACE-EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME

Номер: US20210028603A1
Автор: HAN Sang Heon, Lee Jeong Sik, PARK Keun Uk, YOON Yeo Jae
Принадлежит:

A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture. 1. A surface light emitting laser device comprising:a first electrode;a substrate disposed on the first electrode;a first reflection layer disposed on the substrate;an active region disposed on the first reflection layer and including a cavity;an opening region disposed on the active region and including an aperture and an insulating region;a second reflection layer disposed on the opening region;a second electrode disposed on the second reflection layer; anda delta doping layer disposed in the opening region.wherein a thickness of the insulating region becomes thinner into the aperture direction, andwherein the delta doped layer is disposed in the aperture.2. The surface light emitting laser device according to claim 1 , wherein a first thickness in an outer region of the insulating region is thicker than a second thickness in an inner region adjacent to the aperture.3. The surface light emitting laser device according to claim 1 , wherein an inner end of the insulating region overlaps with the delta doping layer in a first direction claim 1 , andwherein a minimum thickness of the insulating region is in contact with the delta doped layer.4. The surface light emitting laser device according to claim 1 , wherein the aperture includes a first AlGa-based layer and a second AlGa-based layer ...

Подробнее
Номер записи: 24
02-02-2017 дата публикации

VCSEL STRUCTURE

Номер: US20170033534A1
Автор: Chung Il-Sug, Taghizadeh ALIREZA
Принадлежит:

The invention relates to a VCSEL structure based on a novel grating reflector. The grating reflector () comprises a grating layer () with a contiguous core grating region having a grating structure, wherein an index of refraction of high-index sections () of the grating structure is at least 2.5, and wherein an index of refraction of low-index sections () of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer () abutting the grating layer (), and an index of refraction of the cap layer within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity and amplification. The cap layer () may comprise an active layer () between cladding layers () and electrical contacts () to provide a current through the active layer. Current confinement may be realized by low-index oxide regions (). 225-. (canceled)26. The VCSEL structure in accordance with claim 1 , wherein the first low-index layer comprises SiNx claim 1 , SiO claim 1 , or AlOx claim 1 , and the second low-index layer comprises SiNx claim 1 , SiO claim 1 , or AlOx.27. The VCSEL structure in accordance with claim 1 , wherein the first low-index layer comprises SiNx claim 1 , SiO claim 1 , AlOx claim 1 , or BCB claim 1 , and the second low-index layer comprises SiNx claim 1 , SiO claim 1 , or AlOx.28. The VCSEL structure in accordance with claim 1 , wherein the core ...

Подробнее
Номер записи: 25
31-01-2019 дата публикации

SINGLE-CHIP SERIES CONNECTED VCSEL ARRAY

Номер: US20190036308A1
Автор: CARSON Richard F., LI Nein-Yi, WARREN Mial E.
Принадлежит:

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions. 1. A series-connected vertical-cavity surface-emitting laser (VCSEL) array , comprising: a semiconductor substrate and a conductive cathode layer, the conductive cathode layer including one or more non-conductive regions that form a plurality of electrically separate conductive regions; and', 'a plurality of VCSEL elements on each electrically separate conductive region, the plurality of VCSEL elements including an anode region connected in series with a cathode region; and', 'a sub-mount including a metallization pattern configured to connect the anode region on a first electrically separate conductive region to the cathode region on a second electrically separate conductive region, to maintain electrical separation between the electrically separate conductive regions on the conductive cathode layer, and to electrically separate the anode region and the cathode region on each electrically separate conductive region on the conductive cathode layer., 'a die, including2. The VCSEL array of claim 1 , wherein the ...

Подробнее
Номер записи: 26
04-02-2021 дата публикации

SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210036490A1
Автор: Kumano Tetsuya
Принадлежит: Sumitomo Electric Industries, Ltd.

A surface-emitting laser includes a substrate, a lower reflector layer disposed on the substrate, an active layer disposed on the lower reflector layer, and an upper reflector layer disposed on the active layer. The lower reflector layer, the active layer, and the upper reflector layer form a mesa. The mesa has a current confinement structure. The current confinement structure includes a current confinement layer. The current confinement layer includes an oxide layer extending from a periphery of the mesa and an aperture surrounded by the oxide layer. The aperture overlaps the active layer. The aperture has a major axis and a minor axis. A length of the major axis is twice or more a length of the minor axis. 1. A surface-emitting laser comprising:a substrate;a lower reflector layer disposed on the substrate;an active layer disposed on the lower reflector layer; andan upper reflector layer disposed on the active layer,wherein the lower reflector layer, the active layer, and the upper reflector layer form a mesa,the mesa has a current confinement structure,the current confinement structure includes a current confinement layer, the current confinement layer including an oxide layer extending from a periphery of the mesa and an aperture surrounded by the oxide layer, the aperture overlapping the active layer,the aperture has a major axis and a minor axis, anda length of the major axis is twice or more a length of the minor axis.2. The surface-emitting laser according to claim 1 , wherein the length of the major axis of the aperture is twice or more and ten times or less the length of the minor axis of the aperture.3. The surface-emitting laser according to claim 1 , wherein the aperture is elliptical.4. The surface-emitting laser according to claim 1 , whereinthe mesa has a major axis and a minor axis, anda length of the major axis of the mesa is twice or more a length of the minor axis of the mesa.5. The surface-emitting laser according to claim 4 , whereinthe lower ...

Подробнее
Номер записи: 27
11-02-2016 дата публикации

MONOLITHICALLY INTEGRATED SURFACE EMITTING LASER WITH MODULATOR

Номер: US20160043529A1
Автор: Hamed Dalir, KOYAMA Fumio
Принадлежит:

A surface emitting laser includes a structure in which a semiconductor substrate, a lower DBR, and an active layer are layered. A VCSEL (vertical cavity surface emitting laser) and an EAM (electro-absorption modulator) are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled. The EAM outputs an emitted light in a direction that is orthogonal to the substrate. The width of a waveguide region of the VCSEL defined in the second direction is narrower than the width of a waveguide region of the EAM. 1. An surface emitting laser comprising:a semiconductor substrate;a lower distributed Bragg reflector formed on the semiconductor substrate;an active layer formed on the lower distributed Bragg reflector; andan upper distributed Bragg reflector formed on the active layer,wherein a vertical cavity surface emitting laser and an electro-absorption modulator are formed adjacent to each other along a first direction defined on the substrate plane such that they are optically coupled,and wherein a width of a waveguide region included in the vertical cavity surface emitting laser, defined in a second direction that is orthogonal to the first direction defined on the substrate plane, is narrower than a width of a waveguide region of the electro-absorption modulator defined in the second direction,and wherein the electro-absorption modulator outputs an emitted light in a direction that is orthogonal to the substrate.2. The surface emitting laser according to claim 1 , wherein claim 1 , in the vertical cavity surface emitting laser claim 1 , transverse modes are formed using reflection that occurs on a face that connects the vertical cavity surface emitting laser and the electro-absorption modulator.3. The surface emitting laser according to claim 1 , wherein claim 1 , the output is taken from the end portion of the electro-absorption modulator claim 1 , wherein claim 1 , the top reflectivity is lower than that in the ...

Подробнее
Номер записи: 28
08-02-2018 дата публикации

ETCHED PLANARIZED VCSEL

Номер: US20180041009A1
Автор: Graham Luke, MacInnes Andy
Принадлежит:

An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region. 1. An etched planarized vertical cavity surface emitting laser (VCSEL) comprising:an active region;a blocking region over the active region, the blocking region defining one or more apertures therein; andone or more conductive channel cores in the one or more apertures of the blocking region, wherein the one or more conductive channel cores and blocking region form an isolation region.2. The VCSEL of claim 1 , further comprising:a bottom mirror region below the active region; anda top mirror region above the isolation region.3. The VCSEL of claim 1 , wherein the blocking region has a thickness from 1 nm to 500 nm.4. The VCSEL of claim 1 , wherein the conductive channel core has a diameter of about 1 micron to about 10 microns.5. The VCSEL of claim 1 , further comprising a plurality of the conductive channel cores in the blocking region.6. The VCSEL of claim 1 , wherein the conductive channel core has higher refractive index than the blocking region.7. The VCSEL of claim 1 , wherein the ...

Подробнее
Номер записи: 29
08-02-2018 дата публикации

Mode Control in Vertical-Cavity Surface-Emitting Lasers

Номер: US20180041010A1
Автор: Benjamin Kesler, John Michael Dallesasse, Thomas O&#39;Brien, JR.
Принадлежит: University of Illinois

Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

Подробнее
Номер записи: 30
24-02-2022 дата публикации

RADIATION EMITTER

Номер: US20220059990A1
Автор: BIMBERG Dieter, LARISCH Gunter, TIAN Sicong
Принадлежит: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa. 2402124. Method of wherein the step of forming the at least two apertures () inside the intermediate layer (-) comprises:{'b': 30', '10', '30', '21', '24', '21', '24, 'vertically etching blind holes () inside the layer stack (), wherein the blind holes () vertically extend at least to the intermediate layer (-) and expose the intermediate layer (-); and'}{'b': 21', '24', '30', '40', '21', '24, 'oxidizing sections of the intermediate layer (-) via the blind holes () and thereby forming said apertures () inside the intermediate layer (-).'}3. Method of{'b': 21', '24', '31', '30', '30', '32', '21', '24', '40, 'wherein said oxidizing of the intermediate layer (-) is carried out via the sidewalls () of the blind holes () in lateral direction, wherein from each hole () an oxidation front () radially moves outwards and wherein the etching is terminated before the entire intermediate layer (-) is oxidized, thereby forming said apertures () that are each limited by at least three oxidation fronts.'}4. Method according to{'b': '40', 'wherein at least one of the ...

Подробнее
Номер записи: 31
24-02-2022 дата публикации

RADIATION EMITTER

Номер: US20220059991A1
Автор: BIMBERG Dieter, LARISCH Gunter, TIAN Sicong
Принадлежит: Changchun Institute of Optics, Fine Mechanics and Physics

An exemplary embodiment of the invention relates to a method of fabricating a radiation emitter () comprising the steps of fabricating a layer stack () that comprises a first reflector (), an active region (), an oxidizable layer (-), and a second reflector (); and locally removing the layer stack (), and thereby forming a mesa (M) of the radiation emitter (), wherein said mesa (M) comprises the first reflector (), the active region (), the oxidizable layer (-) and the second reflector (), wherein before or after locally removing the layer stack () and forming said mesa (M) the following steps are carried out: vertically etching blind holes () inside the layer stack (), wherein the blind holes () vertically extend at least to the oxidizable layer (-) and expose the oxidizable layer (-); and oxidizing the oxidizable layer (-) via the sidewalls () of the blind holes () in lateral direction, wherein from each hole an oxidation front () radially moves outwards and wherein the etching is terminated before the entire oxidizable layer (-) is oxidized, thereby forming at least two unoxidized apertures, () each of which is limited by at least three oxidation fronts (), inside the mesa. 2. Method of wherein{'b': ['21', '24'], '#text': 'said mesa is provided with at least two individual VCSEL units by fabricating said at least two apertures within said mesa and within the same oxidizable layer (-).'}3. Method of whereinthe at least two apertures form VCSEL sub-cells that operate in parallel.4. Method of wherein{'b': '40', '#text': 'the apertures () are so narrowly spaced in said mesa (M) that the resulting radiation emitter provides single mode emission.'}5. Method of wherein{'b': ['30', '10', '30', '21', '24', '21', '24'], '#text': 'at least six blind holes () are vertically etched inside the layer stack (), wherein the blind holes () vertically extend at least to the oxidizable layer (-) and expose the oxidizable layer (-); and'}{'b': ['21', '24', '31', '30'], '#text': 'by ...

Подробнее
Номер записи: 32
24-02-2022 дата публикации

RADIATION EMITTER

Номер: US20220059997A1
Автор: BIMBERG Dieter, LARISCH Gunter, TIAN Sicong
Принадлежит: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts. 2. Method of wherein{'b': 30', '100', '10', '10, 'the at least three blind holes () per radiation emitter () are vertically etched inside the layer stack () in an area which belongs to the at least one mesa (M) after locally removing the layer stack ().'}3. Method according to wherein{'b': 30', '10, 'at least four blind holes () are etched inside the layer stack () in an area which will belong to the at least one mesa (M) and'}{'b': 40', '32, 'at least one unoxidized aperture () is formed that is limited by at least four oxidation fronts ().'}4. Method according to wherein{'b': 30', '10, 'a plurality of blind holes () is etched inside the layer stack () in an area which will belong to the at least one mesa (M),'}{'b': 30', '1', '1', '2', '2, 'wherein the blind holes () are arranged in a lattice-like way forming a grid having a first grid spacing (d) in a first direction (D) and a second grid spacing (d) in a second different direction (D).'}5. Method according to wherein{'b': '32', 'the oxidation is carried out using processing ...

Подробнее
Номер записи: 33
07-02-2019 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

Номер: US20190044306A1
Автор: ARIKATA Suguru, FUJI Kei, Ishizuka Takashi, NISHIZUKA Koji, Sumitomo Takamichi, TANAHASHI Toshiyuki, Yoshimoto Susumu
Принадлежит: Sumitomo Electric Industries, Ltd.

A vertical cavity surface emitting laser includes: an active layer; a first laminate for a first distributed Bragg reflector; and a first intermediate layer disposed between the active layer and the first laminate. The first intermediate layer has first and second portions. The first laminate, the first and second portions of the first intermediate layer, and the active layer are arranged along a direction of a first axis. The first laminate and the first portion of the first intermediate layer each include a first dopant. The active layer has a first-dopant concentration of less than 1×10cm. The first portion of the first intermediate layer has a first-dopant concentration smaller than that of the first laminate. The second portion of the first intermediate layer has a first-dopant concentration smaller than that of the first portion of the first intermediate layer. 1. A vertical cavity surface emitting laser comprising:an active layer;a first laminate for a first distributed Bragg reflector; anda first intermediate layer disposed between the active layer and the first laminate,the first intermediate layer having a first portion and a second portion,the first laminate, the first portion and the second portion of the first intermediate layer, and the active layer being arranged along a direction of a first axis,the first laminate and the first portion of the first intermediate layer each including a first dopant,{'sup': 16', '−3, 'the active layer having a concentration of the first dopant of less than 1×10cm,'}the first portion of the first intermediate layer extending from the first laminate to the second portion of the first intermediate layer,the second portion of the first intermediate layer extending from the first portion of the first intermediate layer to the active layer,the first portion of the first intermediate layer having a concentration of the first dopant smaller than that of the first laminate, andthe second portion of the first intermediate layer ...

Подробнее
Номер записи: 34
18-02-2021 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER CHIP

Номер: US20210050710A1
Автор: HALBRITTER Hubert, Rügheimer Tilman
Принадлежит:

Surface-emitting semiconductor laser chip () comprising a carrier (), a layer stack () arranged on the carrier () and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact () and a rear side contact (), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (), wherein in the carrier () an electrical through-connection () is provided, which extends from a bottom surface () of the carrier () facing away from the layer stack () to a surface of the carrier () facing the layer stack (), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection () parallel to the layer plane (L) on the surface facing the layer stack. 1. A surface-emitting semiconductor laser chip having a carrier , a layer stack arranged on the carrier and having a layer plane extending perpendicular to a stacking direction , a front side contact and a rear side contact , in whichin operation a predetermined distribution of a current density is achieved by means of current constriction in the layer stack, wherein the carrier an electrical through-connection is provided, which extends from a bottom surface of the carrier facing away from the layer stack to a surface of the carrier facing the layer stack, andthe distribution of the current density is significantly influenced by the shape and size of a cross-section of the through-connection parallel to the layer plane on the surface facing the layer stack.2. The surface-emitting semiconductor laser chip according to claim 1 ,in which the semiconductor laser chip forms a gain-guided semiconductor laser.3. The surface-emitting semiconductor laser chip according to claim 1 ,in which the rear side contact is arranged between the layer stack and the carrier, and directly adjoins the layer stack on one side and to the through-connection on the ...

Подробнее
Номер записи: 35
18-02-2021 дата публикации

VCSEL WITH DOUBLE OXIDE APERTURES

Номер: US20210050711A1
Автор: Dubey Richa, Gazula Deepa, Kocot Chris, Roxlo Charles, Shi Hanxing
Принадлежит:

In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region. 1. A VCSEL comprising:an active region to produce light at a wavelength;an emission surface to emit the light at the wavelength;a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength;a first oxide aperture in the first oxide region;a second oxide region between the first oxide region and the second oxide region; anda second oxide aperture in the second oxide region,wherein the emitted light has a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.2. The VCSEL of claim 1 , wherein the first oxide region is positioned at a second node of a standing wave of the light within the VCSEL and the second oxide region is not positioned at a first node of the standing wave.3. The VCSEL of claim 1 , wherein the second oxide region is positioned:between a first node of a standing wave and an antinode of the standing wave;at the antinode of the standing wave; oranother node of the standing wave other than the first node or a second node of the standing wave.4. The VCSEL of claim 1 , wherein the emitted light has a numerical aperture greater than about 0.14 or less than about 0.30.5. The VCSEL of claim 1 , wherein at least one of the first oxide aperture or second oxide aperture has a cross-sectional ...

Подробнее
Номер записи: 36
15-02-2018 дата публикации

WAVELENGTH-TUNABLE VERTICAL CAVITY SURFACE EMITTING LASER FOR SWEPT SOURCE OPTICAL COHERENCE TOMOGRAPHY SYSTEM

Номер: US20180048121A1
Автор: Eu David, Li Tongning, Makino Toshihiko
Принадлежит:

A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz. 1. A microelectromechanical system (MEMS) tunable vertical cavity surface-emitting laser (VCSEL) comprising an air gap , an anti-reflective (AR) coating , and one or more layers of quantum dots situated in between an upper and a lower distributed Bragg reflector (DBR) , wherein the VCSEL has a tunable range of 100-200 nm , and the one or more layers of quantum dots comprise quantum dots having a center wavelength in the range of 250-1950 nm.2. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots comprise InAs or InGaAs quantum dots claim 1 , and are separated by InGaAs barrier layers.3. The MEMS tunable VCSEL of claim 1 , wherein each of the DBRs comprises multiple pairs of alternating layers of material.4. The MEMS tunable VCSEL of claim 3 , wherein the alternating layers of material comprise GaAs or AlGaAs.5. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots are in an active region grown continuously on the lower DBR.6. The MEMS tunable VCSEL of claim 1 , wherein ...

Подробнее
Номер записи: 37
15-02-2018 дата публикации

Light emitting element array and optical transmission device

Номер: US20180048125A1
Автор: Akemi Murakami, Jun Sakurai, Junichiro Hayakawa, Naoki Jogan, Takashi Kondo
Принадлежит: Fuji Xerox Co Ltd

A light emitting element array includes plural semiconductor stacking structures and a light screening portion. The plural semiconductor stacking structures each include a light emitting portion and a light receiving portion that receives light propagated in a lateral direction via a semiconductor layer from the light emitting portion. The light screening portion is provided between the plural semiconductor stacking structures to screen light directed from the light emitting portion of one of the semiconductor stacking structures to the light receiving portion of another semiconductor stacking structure.

Подробнее
Номер записи: 38
03-03-2022 дата публикации

CONTROL OF VCSEL SPATIAL MODES AND OUTPUT BEAM

Номер: US20220069546A1
Автор: DOWD Philip, Roucka Radek, SIALA SABEUR
Принадлежит: ARRAY PHOTONICS, INC.

A VCSEL device having non-coaxial-with-one-another apertures and/or rotationally asymmetric apertures formed in layer(s) of the VCSEL structure to define more than one spatial mode in a light output in operation of the device. An array of such VCSEL devices configured to have different spatial modes at the output of different constituent VCSEL devices. Spatial asymmetry of structure of the constituent VCSEL devices and, therefore, arrays of VCSEL devices causes the overall light output to form an irregular grid of output spots of light. When the VCSEL array is equipped with an appropriate lens array, the spatial components of the light output of the VCSEL array are caused to overlap in the far at the imaging plane in a multiple spatial (and spectral) mode fashion, thereby reducing speckle in imaging applications.

Подробнее
Номер записи: 39
25-02-2016 дата публикации

WAVELENGTH-TUNABLE VERTICAL CAVITY SURFACE EMITTING LASER FOR SWEPT SOURCE OPTICAL COHERENCE TOMOGRAPHY SYSTEM

Номер: US20160056613A1
Автор: Eu David, Li Tongning, Makino Toshihiko
Принадлежит:

A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz. 1. A microelectromechanical system (MEMS) tunable vertical cavity surface-emitting laser (VCSEL) comprising one or more layers of quantum dots.2. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots comprise InAs or InGaAs quantum dots claim 1 , and are separated by InGaAs barrier layers.3. The MEMS tunable VCSEL of claim 1 , having an upper and a lower DBR claim 1 , wherein the DBR is GaAs or AlGaAs-based.4. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots are in an active region grown continuously on the DBR.5. The MEMS tunable VCSEL of claim 1 , having a tunable range of greater than 100 nm.6. A tunable VCSEL for swept source optical coherence tomography comprising:a MEMS tunable VCSEL, a bottom half VCSEL part, and an upper mirror part, wherein said bottom half VCSEL part includes:', 'a bottom DBR that is epitaxially grown on a GaAs substrate,', 'and an active layer comprised of a plurality of layers of quantum dots that are epitaxially grown on the top of said ...

Подробнее
Номер записи: 40
25-02-2021 дата публикации

VERTICAL-CAVITY SURFACE-EMITTING LASER

Номер: US20210057881A1
Автор: CHAN Michael C. Y., LUO Yuhui
Принадлежит: BrightIntelligence Technologies (Zhongshan) Co., Ltd.

A vertical-cavity surface-emitting laser, comprising a substrate, wherein bottom n-type DBR mirror, first oxidation confinement layer, n-type guide spacer layer, active region layer, p-type guide spacer layer, second oxidation confinement layer, first spacer layer, third oxidation confinement layer second spacer layer, fourth oxidation confinement layer, third spacer layer, fifth oxidation confinement layer, fourth spacer layer, sixth oxidation confinement layer, fifth spacer layer, seventh oxidation confinement layer, sixth spacer layer, eighth oxidation confinement layer, top p-type DBR mirror, p-type contact layer and p-side electrode are successively stacked on the substrate; and a back surface of the substrate is provided with an n-side electrode. 1101102104105106107108109110111112113114115116117118119120121122123101. A vertical cavity surface emitting laser is characterized by comprising: a substrate () , on which a bottom n-type DBR mirror () , and a first oxidation confinement layer () , a n-type guide spacer layer () , an active region layer () , a p-type guide spacer layer () , a second oxidation confinement layer () , a first spacer layer () , a third oxidation confinement layer () , a second spacer layer () , a fourth oxidation confinement layer () , a third spacer layer () , a fifth oxidation confinement layer () , a fourth spacer layer () , a sixth oxidation confinement layer () , a fifth spacer layer () , a seventh oxidation confinement layer () , a sixth spacer layer () , an eighth oxidation confinement layer () , a top p-type DBR mirror () , a p-type contact layer () and a p-side electrode () , an n-side electrode is disposed on a surface of the substrate ();{'b': '102', 'a bottom n-type DBR mirror () includes a plurality of a first refractive index layers and a plurality of second refractive index layers,the first refractive index layers and the second refractive index layer are AlGaAs layers, the refractive index of the first refractive index ...

Подробнее
Номер записи: 41
25-02-2021 дата публикации

Vertical cavity surface emitting laser element and electronic apparatus

Номер: US20210057882A1
Автор: Katsunori Yanashima, Kota Tokuda, Mikihiro Yokozeki, Rintaro Koda, Shunsuke Kono
Принадлежит: Sony Corp

[Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Подробнее
Номер записи: 42
01-03-2018 дата публикации

SURFACE LIGHT EMITTING SEMICONDUCTOR LASER ELEMENT

Номер: US20180059344A1
Автор: Kuromizu Yuichi, Narui Hironobu, TANAKA Yoshiyuki, Watanabe Yoshiaki, Yamauchi Yoshinori
Принадлежит:

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided. 114-. (canceled)15. A surface light-emitting semiconductor laser element comprising:a substrate;a lower reflector having a first-type semiconductor multi-layer structure disposed on the substrate;an active layer disposed on the lower reflector;a current confinement layer including a current injection region and an oxidation region disposed on the active layer;an upper reflector having a second-type semiconductor multi-layer structure disposed on the current confinement layer;a multi-layer structure disposed on the upper reflector, the multi-layer structure comprises a first layer defining a first opening, a second layer disposed on the first layer and defining a second opening, and a third layer disposed on the second layer and defining a third opening, wherein a step-wise shape is formed by the first layer, the second layer, and the third layer in a cross-section view; anda first electrode disposed on the multi-layer structure.16. The surface light-emitting semiconductor laser element of claim 15 ,wherein the first opening defined by the first layer has a first diameter in the cross- ...

Подробнее
Номер записи: 43
10-03-2022 дата публикации

LIGHT EMITTING ELEMENT

Номер: US20220077654A1
Автор: HIGUCHI Takafumi, Kondo Takashi, MINAMIRU Takeshi
Принадлежит: FUJIFILM Business Innovation Corp.

A light emitting element formed of a laminate having a current constriction layer includes: a semiconductor substrate; a light emitting portion having plural first recess portions having a depth reaching the current constriction layer, and a current constriction structure formed in the current constriction layer and having an oxidized region where the current constriction layer is oxidized and a non-oxidized region surrounded by the oxidized region; an electrode pad disposed between the light emitting portion and an outer edge portion of the semiconductor substrate; and a step portion disposed between the electrode pad and the light emitting portion and formed from an upper surface of the laminate to the current constriction layer, and the current constriction layer in a region surrounded by the step portion is the oxidized region except for the non-oxidized region. 1. Alight emitting element formed of a laminate having a current constriction layer , the element comprising:a semiconductor substrate;a light emitting portion having a plurality of first recess portions having a depth reaching the current constriction layer, and a current constriction structure formed in the current constriction layer and having an oxidized region where the current constriction layer is oxidized and a non-oxidized region surrounded by the oxidized region;an electrode pad disposed between the light emitting portion and an outer edge portion of the semiconductor substrate; anda step portion disposed between the electrode pad and the light emitting portion and formed from an upper surface of the laminate to the current constriction layer,wherein the current constriction layer in a region surrounded by the step portion is the oxidized region except for the non-oxidized region.2. The light emitting element according to claim 1 ,wherein a second recess portion formed between the electrode pad and the light emitting portion is further provided, andthe step portion is formed by a side wall of ...

Подробнее
Номер записи: 44
21-02-2019 дата публикации

Vertical cavity surface emitting laser

Номер: US20190058307A1
Автор: Philipp Henning Gerlach, Roger King
Принадлежит: Koninklijke Philips NV

The disclosure relates to a Vertical Cavity Surface Emitting Laser ( 100 ) comprising a first electrical contact ( 105 ), a substrate ( 110 ), a first Distributed Bragg Reflector ( 115 ), an active layer ( 120 ), a second Distributed Bragg Reflector ( 130 ) and a second electrical contact ( 135 ). The Vertical Cavity Surface Emitting Laser comprises at least two current aperture layers ( 125 ) arranged below or above the active layer ( 120 ), wherein each of the current aperture layers ( 125 ) comprises one Al y Ga (1-y) As-layer, wherein a first current aperture layer ( 125 a ) of the at least two current aperture layers ( 125 ) is arranged nearer to the active layer ( 120 ) as a second current aperture layer (125 b ) of the at least two current aperture layers ( 125 ), wherein the first current aperture layer ( 125 a ) comprises a first current aperture ( 122 a ) with a bigger size as a second current aperture ( 122 b ) of the second current aperture layer ( 125 b ). The disclosure also relates to a method of manufacturing such a VCSEL ( 100 ).

Подробнее
Номер записи: 45
03-03-2016 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE

Номер: US20160064899A1
Автор: HAYAKAWA Junichiro, JOGAN Naoki, Kondo Takashi, MURAKAMI Akemi, SAKURAI Jun, TAKEDA Kazutaka
Принадлежит: FUJI XEROX CO., LTD.

Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector. 1. A surface-emitting semiconductor laser comprising:a substrate;a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including a plurality of pairs of a low-refractive-index layer and a high-refractive-index layer;a cavity region formed on the first semiconductor multilayer reflector;a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including a plurality of pairs of a low-refractive-index layer and a high-refractive-index layer;a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; anda current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al, an active region; and', 'a cavity extension region interposed between the active region and the first semiconductor multilayer ...

Подробнее
Номер записи: 46
03-03-2016 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER, METHOD FOR PRODUCING THE SAME, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE

Номер: US20160064900A1
Автор: HAYAKAWA Junichiro, JOGAN Naoki, Kondo Takashi, MURAKAMI Akemi, SAKURAI Jun, TAKEDA Kazutaka
Принадлежит: FUJI XEROX CO., LTD.

A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. 1. A surface-emitting semiconductor laser comprising:a first semiconductor multilayer film reflector;an active region;a second semiconductor multilayer film reflector; anda current confinement layer including an oxidized region formed by selective oxidation, a first semiconductor layer having a relatively high Al content,', 'a second semiconductor layer adjacent to the first semiconductor layer, the second semiconductor layer being disposed on an active-region side of the first semiconductor layer, the second semiconductor layer having a lower Al content than the first semiconductor layer, and', 'a composition-gradient layer adjacent to the first semiconductor layer, the composition-gradient layer being disposed on a side of the first semiconductor layer which is opposite to the active-region side on which the second semiconductor layer is disposed, and, 'wherein the current confinement layer includes'}wherein a portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.2. The surface-emitting semiconductor laser according to claim ...

Подробнее
Номер записи: 47
20-02-2020 дата публикации

SEMICONDUCTOR OPTICAL AMPLIFIER

Номер: US20200059070A1
Автор: HAYAKAWA Junichiro, MURAKAMI Akemi, TOMINAGA Daiki
Принадлежит: FUJI XEROX CO., LTD.

A semiconductor optical amplifier includes a conductive region that is provided on a substrate and allows light transmission, and a nonconductive region that is provided around the conductive region and prohibits light transmission. The conductive region includes a first region including a light-coupling portion to which light from an external light-source unit is coupled, and a second region having a narrower width than the first region and connected to the first region through a connecting portion, the second region including a light-amplifying portion amplifying the light from the light-coupling portion by propagating the light in a predetermined propagating direction along a surface of the substrate, the light-amplifying portion outputting the amplified light in a direction intersecting the surface of the substrate. Seen in a direction perpendicular to the surface of the substrate, the semiconductor optical amplifier includes a portion where a width of the conductive region is continuously reduced from the first region to the second region. 1. A semiconductor optical amplifier comprising:a conductive region that is provided on a substrate and allows light transmission; anda nonconductive region that is provided around the conductive region and prohibits light transmission, a first region including a light-coupling portion to which light from an external light-source unit is coupled; and', 'a second region having a narrower width than the first region and connected to the first region through a connecting portion, the second region including a light-amplifying portion amplifying the light from the light-coupling portion by propagating the light in a predetermined propagating direction along a surface of the substrate, the light-amplifying portion outputting the amplified light in a direction intersecting the surface of the substrate,, 'wherein the conductive region includes'}wherein, seen in a direction perpendicular to the surface of the substrate, the ...

Подробнее
Номер записи: 48
20-02-2020 дата публикации

HIGH-EFFICIENCY OXIDE VCSEL MANUFACTURING METHOD THEREOF

Номер: US20200059071A1
Автор: Lee Hyung Joo
Принадлежит: AUK CORP.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof. 1. An oxide vertical cavity surface emitting laser (VCSEL) having a conductive current spreading layer formed between a top electrode and a top distributed Bragg reflector to pass laser having a peak wavelength of 860±10 nm.2. The VCSEL according to claim 1 , wherein the conductive current spreading layer is a non-oxidizing barrier layer.3. The VCSEL according to claim 2 , wherein the non-oxidizing barrier layer is an Al-free layer.4. The VCSEL according to claim 1 , wherein the current spreading layer is a GaP layer.5. The VCSEL according to claim 1 , wherein the GaP layer includes a metallic and/or non-metallic dopant.6. The VCSEL according to claim 5 , wherein the dopant is selected from a group including Mg claim 5 , Zn and carbon as the dopant.7. The VCSEL according to claim 5 , wherein the GaP layer has a thickness of 1 μm or larger.8. The VCSEL according to claim 1 , wherein the VCSEL includes a bottom electrode claim 1 , a substrate claim 1 , a bottom distributed Bragg reflector claim 1 , an active layer claim 1 , a top distributed Bragg reflector claim 1 , a top electrode and an oxidized layer.9. The VCSEL according to claim 8 , wherein the active layer is configured of a GaAs quantum well and an AlGaAs quantum barrier layer.10. The VCSEL according to claim 8 , wherein the thickness of the GaP is 3 μm.11. The VCSEL according to claim 8 , wherein the oxidized layer is positioned between layers of a top p-DBR.12. The VCSEL according to claim 8 , wherein the oxide CSEL operates at a current of 10 to 40 mA.13. The VCSEL according to claim 8 , wherein the top electrode is a transparent electrode selected among indium tin oxide (ITO) claim 8 , ZnO and AZO.14. The VCSEL according to claim 8 , ...

Подробнее
Номер записи: 49
20-02-2020 дата публикации

High-efficiency oxide vcsel with improved light extraction, and manufacturing method thereof

Номер: US20200059072A1
Автор: Hyung Joo Lee
Принадлежит: AUK CORP

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

Подробнее
Номер записи: 50
04-03-2021 дата публикации

Laser emitting unit and lidar device using the same

Номер: US20210066893A1
Автор: Chan M LIM, Chang Mo Jeong, Hee Sun Yoon, Hoon Il JEONG, Jai Hi Cho, Jun Hwan Jang
Принадлежит: SOS Lab Co Ltd

A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

Подробнее
Номер записи: 51
08-03-2018 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20180069375A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting device comprising:a light-emitting structure, at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure surrounding the light-emitting structure;at least two connecting structures, each of the connecting structures being connected to the light-emitting structure and the surrounding structure, at least two gaps are disposed between the light-emitting structure and the surrounding structure, and each of the gaps are extending along a side surface of the columnar configuration of the light emitting structure;an upper electrode; anda compound-semiconductor surface consisting of compound semiconductor material; a light-emitting-structure active region having an active-region compositional layer configuration;', 'a light-emitting-structure first region disposed above a substrate of the light-emitting device and below the light-emitting-structure active region, the light-emitting structure first region having a first-region compositional layer configuration;', a first portion of the light-emitting-structure second region having a second ...

Подробнее
Номер записи: 52
28-02-2019 дата публикации

CONTROLLING BEAM DIVERGENCE IN A VERTICAL-CAVITY SURFACE-EMITTING LASER

Номер: US20190067906A1
Автор: Barve Ajit Vijay, HEGBLOM Eric R., YUEN Albert, Zhao Guowei
Принадлежит:

In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include an active layer, a first mirror, a second mirror, and one or more oxidation layers. The active layer may be between the first mirror and the second mirror, and the one or more oxidation layers may be proximate to the active layer. The one or more oxidation layers may be configured to control beam divergence of a laser beam emitted by the VCSEL based on at least one of: a quantity of the one or more oxidation layers, a shape of the one or more oxidation layers, a thickness of the one or more oxidation layers, or a proximity of the one or more oxidation layers to the active layer. 1. A vertical cavity surface emitting laser (VCSEL) , comprising:a substrate layer; and wherein the active layer is between the first mirror and the second mirror,', 'wherein the oxidation layer is proximate to the active layer,', 'the first aperture size being less than the second aperture size and the first distance being greater than the second distance, and', 'wherein the oxidation layer is tapered and has a first aperture size a first distance from the active layer and a second aperture size a second distance from the active layer,'}, 'a proximity of the oxidation layer to the active layer.', 'wherein the oxidation layer is configured to control beam divergence of a laser beam emitted by the VCSEL based on], 'the epitaxial layers including an active layer, a first mirror, a second mirror, and an oxidation layer,'}, 'epitaxial layers on the substrate layer,'}2. The VCSEL of claim 1 , wherein the oxidation layer is configured to create an effective refractive index step claim 1 , between an active region of the active layer and an oxidation area associated with the oxidation layer claim 1 , to form a wide beam divergence of the laser beam when compared to a beam divergence created by a differently configured ...

Подробнее
Номер записи: 53
28-02-2019 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER

Номер: US20190067908A1
Автор: ONISHI Yutaka
Принадлежит: Sumitomo Electric Industries, Ltd.

A vertical cavity surface emitting laser includes: a supporting base: and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately arranged. The first semiconductor layers each have a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately arranged. The first layers each have a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion. 1. A vertical cavity surface emitting laser comprising:a supporting base: anda post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region, and the upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region being arranged on the supporting base,the lower distributed Bragg reflecting region including first semiconductor layers and second semiconductor layers alternately arranged,the first semiconductor layers each having a refractive index lower than that of each of the second semiconductor layers,the upper distributed Bragg reflecting region including first layers and second layers alternately arranged,the first layers each having a group III-V compound semiconductor portion and a group III oxide portion,the group III-V compound semiconductor portion containing aluminum as a group III constituent element, andthe group III oxide portion surrounding the group ...

Подробнее
Номер записи: 54
28-02-2019 дата публикации

High-Speed VCSEL Device

Номер: US20190067909A1
Автор: Ghosh Chuni, Seurin Jean-Francois, Watkins Laurence, Zhou Delai
Принадлежит: Princeton Optronics, Inc.

A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface. 1. A Vertical Cavity Surface Emitting Laser (VCSEL) comprising:a) a reflecting surface of the VCSEL; i. a first and second multiple quantum well stack;', 'ii. a tunnel junction positioned between the first and second multiple quantum well stack; and', 'iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; and, 'b) a gain region positioned on the reflective surface that generates optical gain, the gain region comprising 'wherein at least one of the reflecting surface or the partially reflective surface comprises a sub-wavelength grating structure.', 'c) a partially reflective surface, the reflective surface, and the partially reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface,'}2. (canceled)3. (canceled)4. The VCSEL of wherein the reflecting surface comprises a sub-wavelength grating structure.5. The VCSEL of wherein the partially reflecting surface comprises a sub-wavelength grating structure.6. The VCSEL of wherein the reflecting surface comprises a combination of a distributed Bragg reflector and a sub-wavelength grating structure.7. (canceled)8. (canceled)9. (canceled)10. The VCSEL of wherein the partially ...

Подробнее
Номер записи: 55
09-03-2017 дата публикации

METHOD OF MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT

Номер: US20170070033A1
Автор: HAYAKAWA Junichiro, JOGAN Naoki, Kondo Takashi, MURAKAMI Akemi, SAKURAI Jun
Принадлежит: FUJI XEROX CO., LTD.

Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region. 1. A method of manufacturing a surface-emitting semiconductor laser element comprising:a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror of a first conductivity type, a rough surface formation layer on the first semiconductor multilayer reflection mirror, an active region on the rough surface formation layer, a second semiconductor multilayer reflection mirror of a second conductivity type on the active region, and a current confining layer that is adjacent to the active region;a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed;a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure;a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer; anda fifth process of ...

Подробнее
Номер записи: 56
11-03-2021 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER

Номер: US20210075192A1
Автор: MURAYAMA Minoru, TAKAMIZU Daiju, Tsuji Yuji, Yamamoto Masashi
Принадлежит: ROHM CO., LTD.

A surface-emitting semiconductor laser includes a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers, a current constriction layer in which the active layer and the second-conductivity-type layer are electrically connected together through an opening, an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer, and, in the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion. 1. A surface-emitting semiconductor laser comprising:a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer stacked on the first-conductivity-type layer, and a second-conductivity-type layer stacked on the active layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers;a current constriction layer that is formed closer to a side of the active layer than a surface of the second-conductivity-type layer on the active layer, and that is an insulative current constriction layer having an opening, and in which the active layer and the second-conductivity-type layer are electrically ...

Подробнее
Номер записи: 57
11-03-2021 дата публикации

VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH MULTIPLE METAL LAYERS FOR ADDRESSING DIFFERENT GROUPS OF EMITTERS

Номер: US20210075196A1
Автор: HEGBLOM Eric R.
Принадлежит:

An optical device may include an array of vertical-cavity surface-emitting lasers (VCSELs) having a design wavelength, each VCSEL having an emission area. The optical device may include a first metal layer, substantially covering the array, a second metal layer substantially covering the first metal layer, and an electrical isolation layer, between the first metal layer and the second metal layer, that includes vias for electrically connecting portions of the first metal layer and portions of the second metal layer. The optical device may include a dielectric disposed over the emission area of each VCSEL. A variation in a thickness of the dielectric across at least approximately 90% of an area of the dielectric may be less than approximately 2% of the design wavelength. A depth of a well around the emission area may be equal to at least approximately 10% of a width of the emission area. 120-. (canceled)21. An optical device comprising: 'each VCSEL having an emission area;', 'an array of vertical-cavity surface-emitting lasers (VCSELs),'} the first metal layer including openings for each emission area, and', 'the first metal layer being connected to a first group of emitters of the array;, 'a first metal layer that substantially covers the array,'} 'wherein the second group does not include emitters of the first group; and', 'the second metal layer being connected to a second group of emitters of the array,'}, 'a second metal layer that substantially covers the first metal layer,'} 'the electrical isolation layer including vias for electrically connecting portions of the first metal layer and portions of the second metal layer.', 'an electrical isolation layer between the first metal layer and the second metal layer,'}22. The optical device of claim 21 , wherein the first metal layer connects the first group to a first anode and the second metal layer connects the second group to a second anode.23. The optical device of claim 21 , further comprising: 'wherein the ...

Подробнее
Номер записи: 58
07-03-2019 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20190074662A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a light-emitting structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the light-emitting structure, an upper surface of the light-emitting structure being a first portion of a semiconductor surface consisting of a compound semiconductor material, and at least an upper portion of the light-emitting structure has a columnar configuration;a surrounding structure disposed so as to surround the light-emitting structure,wherein the surrounding structure includes the same layer structure as a portion of the light-emitting structure in which the insulation region is provided, and an upper surface of the surrounding structure being a second portion of the semiconductor surface;a plurality of connecting ...

Подробнее
Номер записи: 59
17-03-2016 дата публикации

A WAVELENGTH TUNABLE PHOTON SOURCE WITH SEALED INNER VOLUME

Номер: US20160079736A1
Автор: Ansbæk Thor, Yvind Kresten
Принадлежит: DANMARKS TEKNISKE UNIVERSITET

There is presented a method of providing a wavelength tunable photon source (), comprising bonding a first element () with a first mirror (), a second element () with a second mirror () and a third element () with a photon emitter together in a structure enclosing an inner volume () being a sealed volume, and forming a bonding interface () which is gas-tight, so that the first mirror () is placed in the inner volume () so the first mirror () may move within the inner volume (). The method provides a relatively simple way of obtaining a tunable photon source where the inner volume is sealed. The invention furthermore relates to a corresponding photon source, and use of such photon source. 223-. (canceled)24. The method according to claim 1 , wherein forming the bonding interface comprises forming the bonding interface by direct bonding.25. The method according to claim 1 , wherein the step of forming the bonding interface is preceded by a step of providing a pressure above or below an atmospheric pressure claim 1 , so as to provide a corresponding pressure above or below the atmospheric pressure in the inner volume after the step of forming the bonding interface.26. The method according to claim 1 , wherein the method comprises placing an anti-reflection coating on at least a portion of a surface of the third element which delimits the inner volume.28. The wavelength tunable photon source according to claim 27 , wherein the electrical claim 27 , piezo-electrical claim 27 , thermal or mechanical actuator that is configured to move the first minor within the inner volume comprises an electrode for supporting an electrical field between the first mirror and the electrode so as to move the first minor.29. The wavelength tunable photon source according to claim 28 , wherein the electrical field is arranged for moving the first minor in a direction away from the second minor.30. The wavelength tunable photon source according to claim 27 , wherein the photon emitter is a ...

Подробнее
Номер записи: 60
05-03-2020 дата публикации

Light emitter and projector

Номер: US20200076160A1
Автор: Takafumi Noda, Yoji Kitano
Принадлежит: Seiko Epson Corp

A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

Подробнее
Номер записи: 61
05-03-2020 дата публикации

Techniques for vertical cavity surface emitting laser oxidation

Номер: US20200076162A1
Автор: Chen Yu Chen, Jhih-Bin CHEN, Ming Chyi Liu
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.

Подробнее
Номер записи: 62
18-03-2021 дата публикации

SURFACE EMITTING LASER, SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND DETECTION APPARATUS

Номер: US20210083452A1
Автор: Hanaoka Katsunari
Принадлежит:

A surface emitting laser includes a substrate, a plurality of surface emitting laser elements on a first surface of the substrate, a first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; and a second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements. Each of the surface emitting laser elements includes a first reflecting mirror on the substrate; an active layer on the first reflecting mirror; and a second reflecting mirror on the active layer. When a first contact region in which the first electrode and the first conductive semiconductor are connected to each other is on the first surface or in the first conductive semiconductor of the surface emitting laser elements. The first electrode is electrically connected to the light emitting units. The second electrode is electrically connected to each of the light emitting units. 1. A surface emitting laser comprising:a substrate; a first reflecting mirror on the substrate;', 'an active layer on the first reflecting mirror; and', 'a second reflecting mirror on the active layer;, 'a plurality of surface emitting laser elements on a first surface of the substrate, each of the surface emitting laser elements includinga first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; anda second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements,wherein a first contact region, in which the first electrode and the first conductive semiconductor are connected to each other, is located on the first surface or in the first conductive semiconductor of the surface emitting laser elements,wherein one, or two or more of the surface emitting laser elements are defined as a light emitting unit,wherein the light emitting unit includes a plurality of light emitting units, and the first electrode is electrically ...

Подробнее
Номер записи: 63
18-03-2021 дата публикации

SURFACE-EMITTING SEMICONDUCTOR LASER AND SENSING MODULE

Номер: US20210083454A1
Автор: FURUSHIMA YUJI, MASUI YUJI, NAKATA HIDEHIKO
Принадлежит:

A surface-emitting semiconductor laser includes a first emission region that outputs first light, and a second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light. A far field pattern of the first light and a far field pattern of the second light are different from each other. 1. A surface-emitting semiconductor laser comprising:a first emission region that outputs first light; anda second emission region that is provided separately from the first emission region, includes a phase shift section, and outputs second light,a far field pattern of the first light and a far field pattern of the second light being different from each other.2. The surface-emitting semiconductor laser according to claim 1 , wherein the first emission region and the second emission region each include a first light reflection layer claim 1 , a semiconductor layer claim 1 , and a second light reflection layer in the stated order.3. The surface-emitting semiconductor laser according to claim 2 , wherein reflectance on a side of the second light reflection layer differs between the phase shift section of the second emission region and another portion of the second emission region.4. The surface-emitting semiconductor laser according to claim 2 , wherein the phase shift section is provided in a middle portion of the second emission region.5. The surface-emitting semiconductor laser according to claim 2 , wherein reflectance of the phase shift section on a side of the second light reflection layer is lower than reflectance of another portion of the second emission region on the side of the second light reflection layer.6. The surface-emitting semiconductor laser according to claim 5 , whereinthe second emission region further includes a dielectric film stacked on the second light reflection layer,the dielectric film of the phase shift section has an optical film thickness of an odd multiple of one-fourth of a ...

Подробнее
Номер записи: 64
31-03-2022 дата публикации

SUBSTRATE-TRANSFER VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD FOR MANUFACTURE THEREOF

Номер: US20220102938A1
Автор: SHEN Chihchiang
Принадлежит:

A substrate transfer vertical cavity surface emitting laser and method manufacturing thereof are disclosed. The structure of the substrate-transferred vertical-cavity surface-emitting laser comprises: a conductive heat dissipation substrate, a metal adhesion layer and a vertical-cavity surface-emitting laser. A first surface of the conductive heat dissipation substrate is adhered to the vertical-cavity surface-emitting laser chip via the metal adhesion layer. A second surface of the conductive heat dissipation substrate and the side of the vertical-cavity surface-emitting laser film chip that is away from the conductive heat dissipation substrate contains contact electrodes. The first surface and the second surface are two opposite sides of the conductive heat dissipation substrate. The conductive heat dissipation substrate is made of a material with excellent thermal conductivity, which facilitates heat dissipation of the vertical-cavity surface-emitting laser chip. Therefore, the present application significantly improves the power conversion efficiency of the vertical-cavity surface-emitting laser chip. 1. A substrate-transferred vertical-cavity surface-emitting laser , comprising:a conductive heat dissipation substrate;a metal adhesion layer; anda vertical-cavity surface-emitting laser chip;wherein a first surface of the conductive heat dissipation substrate is adhered to the vertical-cavity surface-emitting laser chip via the metal adhesion layer;a second surface of the conductive heat dissipation substrate and the side of the vertical-cavity surface-emitting laser chip that is away from the conductive heat dissipation substrate contain contact electrodes, andthe first surface and the second surface are two opposite sides of the conductive heat dissipation substrate.2. The substrate-transferred vertical-cavity surface-emitting laser according to claim 1 , wherein the conductive heat dissipation substrate is a metal substrate made of a material including at ...

Подробнее
Номер записи: 65
31-03-2022 дата публикации

Trench Process for Dense VCSEL Design

Номер: US20220102940A1
Автор: Noorlag Date J., Sadaka Mariam
Принадлежит:

Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer. 1. An emitter structure comprising:{'claim-text': ['a common bottom DBR layer shared with each emitter in the emitter cluster;', 'a top DBR layer, the top DBR layer including an oxide aperture (OA) layer; and', 'an inside mesa trench in the top DBR layer, and defining a top DBR layer mesa structure laterally interior to the inside mesa trench;', 'wherein the OA layer includes a non-oxidized portion and an oxidized portion extending from a sidewall of the inside mesa trench into the top DBR layer mesa structure; and'], '#text': 'an emitter cluster comprising a non-uniform distribution of emitters, each emitter comprising:'}one or more outside moat trenches in the top DBR layer, each outside moat trench adjacent to the inside mesa trench for one or more emitters in the emitter cluster, wherein each outside moat trench extend to a depth past the OA layer in the top DBR layer.2. The emitter structure of claim 1 , wherein the one or more outside moat trenches includes a first moat trench running laterally between a first plurality of emitters and a second plurality of emitters.3. The emitter structure of claim 2 , wherein the first moat trench intersects an inside mesa trench for at least one emitter.4. The emitter structure of claim 1 , wherein the one or more outside moat trenches includes a first set of one or more outside moat trenches completely laterally surrounding a first subcluster of emitters of the emitter cluster.5. The emitter structure of claim 1 , wherein the emitter cluster is partitioned into a plurality of emitter subclusters by the one or more ...

Подробнее
Номер записи: 66
25-03-2021 дата публикации

HIGH-POWER VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL)

Номер: US20210091537A1
Автор: Chin Yu-Chung, Dai Van-Truong, Huang Chao-Hsing
Принадлежит:

Provided is a high-power vertical cavity surface emitting laser diode (VCSEL), including a first epitaxial region, an active region and a second epitaxial region. One of the first epitaxial region and the second epitaxial region is an N-type epitaxial region, and the other of the first epitaxial region and the second epitaxial region includes a PN junction. The PN junction includes a P-type epitaxial layer, a tunnel junction and an N-type epitaxial layer. The tunnel junction is located between the P-type epitaxial layer and the N-type epitaxial layer, and the P-type epitaxial layer of the PN junction is closest to the active region. 1. A high-power vertical cavity surface emitting laser diode (VCSEL) , comprising:an N-type first epitaxial region located on a substrate;an active region located on the N-type first epitaxial region, wherein the active region includes one or more active layers; anda second epitaxial region located on the active region, wherein the second epitaxial region includes a PN junction, the PN junction includes at least one P-type epitaxial layer, a tunnel junction and at least one N-type epitaxial layer, the tunnel junction is located between the at least one P-type epitaxial layer and the at least one N-type epitaxial layer,wherein the at least one P-type epitaxial layer is close to the active region, and the at least one P-type epitaxial layer is between the active region and the at least one N-type epitaxial layer.2. The high-power VCSEL as claimed in claim 1 , wherein the high-power VCSEL has a slope efficiency of 0.6 Watts/Amp or greater.3. The high-power VCSEL as claimed in claim 1 , wherein the high-power VCSEL is a top-emitting VCSEL or a bottom-emitting VCSEL.4. The high-power VCSEL as claimed in claim 1 , wherein the second epitaxial region includes an upper DBR layer or a spacer layer claim 1 , and the upper DBR layer or the spacer layer is the at least one P-type epitaxial layer.5. The high-power VCSEL as claimed in claim 1 , ...

Подробнее
Номер записи: 67
25-03-2021 дата публикации

VCSEL WITH SELF-ALIGNED MICROLENS TO IMPROVE BEAM DIVERGENCE

Номер: US20210091538A1
Автор: Chen Jhih-Bin, Liu Ming Chyi
Принадлежит:

In some embodiments, the present disclosure relates to a vertical cavity surface emitting laser (VCSEL) device that includes a microlens arranged over a reflector stack. The reflector stack comprises alternating reflector layers of a first material and a second material. The microlens stack includes a first lens layer, a second lens layer arranged over the first lens layer, and a third lens layer arranged over the second lens layer. The first lens layer comprises a first average concentration of a first element and has a first width. The second lens layer comprises a second average concentration of the first element greater than the first average concentration and has a second width smaller than the first width. The third lens layer comprises a third average concentration of the first element greater than the second average concentration and has a third width smaller than the second width. 1. A vertical cavity surface emitting laser (VCSEL) device , comprising:a reflector stack comprising alternating reflector layers of a first material and a second material; and a first lens layer comprising a first average concentration of a first element and having a first width;', 'a second lens layer arranged over the first lens layer and comprising a second average concentration of the first element greater than the first average concentration and having a second width smaller than the first width; and', 'a third lens layer arranged over the second lens layer and comprising a third average concentration of the first element greater than the second average concentration and having a third width smaller than the second width., 'a microlens stack arranged over the reflector stack and comprising2. The VCSEL device of claim 1 , wherein the first lens layer comprises the first material and directly contacts a topmost reflector layer of the reflector stack that comprises the second material.3. The VCSEL device of claim 1 , wherein the first lens layer claim 1 , the second lens layer ...

Подробнее
Номер записи: 68
21-03-2019 дата публикации

VCSEL WITH ELLIPTICAL APERTURE HAVING REDUCED RIN

Номер: US20190089127A1
Автор: Chacinski Marek, CHITICA Nicolae, Gazula Deepa, Landry Gary, Tatum Jim
Принадлежит:

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches. 1. A VCSEL comprising:an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.6 to about 0.8, the VCSEL having a relative intensity noise (MN) of less than or about −140 dB/Hz; andone or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape.2. The VCSEL of claim 1 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.3. The VCSEL of claim 2 , further comprising an elliptical contact having an elliptical contact aperture therein claim 2 , the elliptical contact being around the elliptical emission aperture.4. The VCSEL of claim 3 , wherein the elliptical contact is C-shaped.5. (canceled)6. The VCSEL of claim 1 , wherein the one or more trenches are trapezoidal shaped trenches.7. The VCSEL of claim 6 , further comprising a mesa having ...

Подробнее
Номер записи: 69
21-03-2019 дата публикации

RECONFIGURABLE EMITTER ARRAY

Номер: US20190089131A1
Автор: YUEN Albert
Принадлежит:

An emitter array may comprise a plurality of vertical-emitting devices. The plurality of vertical-emitting devices may be in a two-dimensional pattern of vertical-emitting devices. The emitter array may further comprise a plurality of electrical contacts on a surface of the emitter array. Each of the plurality of electrical contacts may be co-located with and electrically connected to a corresponding vertical-emitting device of the plurality of vertical-emitting devices. The plurality of electrical contacts may provide mechanical support over the plurality of vertical-emitting devices. The plurality of electrical contacts may extend to approximately a same height. A subset of the plurality of vertical-emitting devices may be powered via a corresponding subset of the plurality of electrical contacts. 1. A vertical cavity surface emitting laser (VCSEL) array , comprising: 'wherein the plurality of VCSELs are in a two-dimensional pattern of VCSELs;', 'a plurality of VCSELs,'} wherein an electrical contact, of the plurality of electrical contacts, is co-located with a corresponding VCSEL of the plurality of VCSELs,', 'wherein the plurality of electrical contacts provides mechanical support to an adjacent element over the plurality of VCSELs,', 'wherein the plurality of electrical contacts extends to approximately a same height,', 'wherein the plurality of electrical contacts has a height that is greater than other elements of the VCSEL array on a same surface as the plurality of electrical contacts; and, 'a plurality of electrical contacts on a surface of the VCSEL array,'} wherein one of the plurality of metal interconnects electrically connects one of the plurality of electrical contacts and one of the plurality of VCSELs that corresponds to the one of the plurality of electrical contacts,', 'wherein a subset of the plurality of VCSELs can be powered via a corresponding subset of the plurality of electrical contacts and a corresponding subset of the plurality of metal ...

Подробнее
Номер записи: 70
01-04-2021 дата публикации

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210098971A1
Автор: Arakida Takahiro, Koda Rintaro, MASUI YUJI, Oki Tomoyuki, Yamauchi Yoshinori
Принадлежит:

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 1. A light-emitting element comprising:a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order,wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure;a wall structure disposed so as to surround the mesa structure, the wall structure having the same layer structure as a portion of the mesa structure in which the insulation region is provided;at least one bridge structure connecting the mesa structure and the wall structure, the bridge structure having the same layer structure as the portion of the mesa structure in which the insulation region is provided;a first electrode electrically connected to the first compound semiconductor layer; anda second electrode disposed on a top face of the wall structure, the second electrode being electrically connected to the second ...

Подробнее
Номер записи: 71
01-04-2021 дата публикации

VCSEL WITH ELLIPTICAL APERTURE HAVING REDUCED RIN

Номер: US20210098972A1
Автор: Chacinski Marek, CHITICA Nicolae, Gazula Deepa, Landry Gary, Tatum Jim
Принадлежит:

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches. 1. A VCSEL comprising:an oxidized region that is located between an active region and an emission surface;one or more trenches lateral of the oxidized region and positioned so as to provide the oxidized region with an elliptical shape so as to form an elliptical oxide aperture.2. The VCSEL of claim 1 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.3. The VCSEL of claim 2 , further comprising an elliptical contact having an elliptical contact aperture therein claim 2 , the elliptical contact disposed around the elliptical emission aperture.4. The VCSEL of claim 3 , wherein the elliptical contact is C-shaped.5. The VCSEL of claim 1 , wherein the elliptical oxide aperture has a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.64 to about 0.75.6. The VCSEL of claim 1 , wherein the one or more trenches are trapezoidal shaped trenches.7. The VCSEL of claim 2 , further comprising a mesa having the elliptical oxide aperture claim 2 , oxidized region claim 2 , elliptical ...

Подробнее
Номер записи: 72
28-03-2019 дата публикации

WAVELENGTH-TUNABLE VERTICAL CAVITY SURFACE EMITTING LASER FOR SWEPT SOURCE OPTICAL COHERENCE TOMOGRAPHY SYSTEM

Номер: US20190097394A1
Автор: Eu David, Li Tongning, Makino Toshihiko
Принадлежит:

A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of micro-electromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz. 1. A microelectromechanical system (MEMS) tunable vertical cavity surface-emitting laser (VCSEL) comprising one or more layers of quantum dots.2. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots comprise InAs or InGaAs quantum dots claim 1 , and are separated by InGaAs barrier layers.3. The MEMS tunable VCSEL of claim 1 , having an upper and a lower DBR claim 1 , wherein the DBR is GaAs or AlGaAs-based.4. The MEMS tunable VCSEL of claim 1 , wherein the one or more layers of quantum dots are in an active region grown continuously on the DBR.5. The MEMS tunable VCSEL of claim 1 , having a tunable range of greater than 100 nm.6. A tunable VCSEL for swept source optical coherence tomography comprising:a MEMS tunable VCSEL, a bottom half VCSEL part, and an upper mirror part, wherein said bottom half VCSEL part includes:', 'a bottom DBR that is epitaxially grown on a GaAs substrate,', 'and an active layer comprised of a plurality of layers of quantum dots that are epitaxially grown on the top of ...

Подробнее
Номер записи: 73
13-04-2017 дата публикации

Vertical Microcavity with Confinement Region Having Sub-Wavelength Structures to Create an Effective Refractive Index Variation

Номер: US20170104313A1
Автор: Kristian Samuel CUJIA PENA, Thilo Hermann Stoeferle
Принадлежит: International Business Machines Corp

Embodiments are notably directed to a vertical microcavity. The vertical microcavity includes a first reflector and a second reflector, each of which includes one or more material layers extending perpendicular to a vertical axis x. The cavity may further include a confinement region extending between the first reflector and the second reflector, so as to be able to confine an electromagnetic wave. The confinement region may include a single layer material, which is structured so as to create an effective refractive index variation for the electromagnetic wave to be confined, in an average plane of the single layer material, perpendicularly to said vertical axis x. Additional examples are further directed to related microcavity systems and methods of fabrication.

Подробнее
Номер записи: 74
08-04-2021 дата публикации

SYSTEM AND METHOD FOR COMPACT ELECTRO-OPTICAL INTERFACE

Номер: US20210104852A1
Автор: HAQUE Razi-Ul Muhammad, KAMPASI Komal, PATRA Susant
Принадлежит:

An electro-optical interface system is disclosed which incorporates a housing, an electrical circuit supported from the housing and configured to interface to a plurality of remote electrical components, an electronics subsystem and an optical subsystem. The electronics subsystem is housed within the housing and in communication with the electrical circuit. The optical subsystem is housed within the housing and in communication with the electronics subsystem. The optical subsystem receives electrical signals from the electronics subsystem which are representative of electrical signals received from the remote electrical components, and converts the received electrical signals into optical signals for transmission to a remote subsystem. 1. An electro-optical interface system comprising:a housing;an electrical circuit supported from the housing and configured to interface to a plurality of remote electrical components;an electronics subsystem housed within the housing and in communication with the electrical circuit;an optical subsystem housed within the housing and in communication with the electronics subsystem for receiving electrical signals from the electronics subsystem representative of electrical signals received from the remote electrical components, and converting the received electrical signals into optical signals for transmission to a remote subsystem.2. The system of claim 1 , further comprising a length of optical fiber at least partially housed in the housing and in communication with the optical subsystem for transmitting the optical signals to the remote subsystem.3. The system of claim 1 , further comprising a graded index (GRIN) rod element disposed adjacent the optical subsystem claim 1 , the GRIN rod element configured to collimate and focus the optical signals.4. The system of claim 2 , further comprising a ferrule sleeve housed within the housing for encasing a portion of the optical fiber.5. The system of claim 1 , wherein the housing ...

Подробнее
Номер записи: 75
08-04-2021 дата публикации

Light-emitting element and method of manufacturing the same

Номер: US20210104870A1
Автор: Hiroshi Nakajima, Jugo Mitomo, Masamichi Ito, Noriyuki Futagawa, Shoichiro Izumi, Susumu Sato, Tatsushi Hamaguchi
Принадлежит: Sony Corp

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21 a and a second surface 21 b that is opposed to the first surface 21 a , an active layer 23 that faces the second surface 21 b of the first compound semiconductor layer 21 , and a second compound semiconductor layer 22 including a first surface 22 a that faces the active layer 23 and a second surface 22 b that is opposed to the first surface 22 a are laminated; a first light reflection layer 41 that is provided on the first surface 21 a side of the first compound semiconductor layer 21 ; and a second light reflection layer 42 that is provided on the second surface 22 b side of the second compound semiconductor layer 22 . The first light reflection layer 41 includes a concave mirror portion 43 , and the second light reflection layer 42 has a flat shape.

Подробнее
Номер записи: 76
29-04-2021 дата публикации

VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) TUNED THROUGH APPLICATION OF MECHANICAL STRESS VIA A PIEZOELECTRIC MATERIAL

Номер: US20210126431A1
Автор: Aharon Eran, Cestier Isabelle, Galanty Matan, Kalifa Itshak, Mentovich Elad
Принадлежит:

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL. 1. A tunable vertical-cavity surface-emitting laser (VCSEL) comprising: a first reflector;', 'a second reflector; and', 'an active cavity material structure disposed between the first and second reflectors, the active cavity material structure comprising an active region;, 'a VCSEL emission structure, the emission structure comprisingpiezoelectric material mechanically coupled to the VCSEL emission structure, such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure; anda piezoelectric electrode disposed on a second surface of the piezoelectric material, the piezoelectric electrode configured to cause an electric field within the piezoelectric material, wherein the electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to ...

Подробнее
Номер записи: 77
02-04-2020 дата публикации

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20200106243A1
Автор: FUTAGAWA NORIYUKI, HAMAGUCHI TATSUSHI, Kuramoto Masaru, Maeda Yuki
Принадлежит: SONY CORPORATION

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A method of manufacturing a light emitting element comprising , sequentially:(a) forming a first light reflecting layer having a convex shape formed from a multilayer film on a substrate for manufacturing a light emitting element;(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element that includes the first light reflecting layer;(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;(d) fixing the second light ...

Подробнее
Номер записи: 78
27-04-2017 дата публикации

Atomic oscillator

Номер: US20170117911A1
Автор: Tetsuo Nishida
Принадлежит: Seiko Epson Corp

An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; alight source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

Подробнее
Номер записи: 79
18-04-2019 дата публикации

Data center transmission systems

Номер: US20190115722A1
Автор: Michael Renne Ty Tan, Sagi Varghese Mathai, Wayne Victor Sorin
Принадлежит: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

In the examples provided herein, a data center transmission system includes a VCSEL (vertical-cavity surface-emitting laser) that lases in a single spatial mode with a side mode suppression ratio of at least 25 dB, where the VCSEL is formed on a substrate and lases at a wavelength transparent to the substrate, and further where an output of the VCSEL exits through the substrate. Also, the VCSEL is directly modulated. The system further includes an optical fiber having a first end to receive the output of the VCSEL for propagation along the optical fiber. The optical fiber supports a single spatial mode without supporting higher order spatial modes over a range of wavelengths between 1260 nm and 1360 nm. The system also includes a receiver to receive the directly modulated output of the VCSEL after propagation through the optical fiber.

Подробнее
Номер записи: 80
09-04-2020 дата публикации

ELECTRICALLY PUMPED VERTICAL CAVITY LASER

Номер: US20200112140A1
Автор: Jayaraman Vijaysekhar, Lascola Kevin, Segal Stephen
Принадлежит:

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. 1. An electrically pumped vertical cavity laser (VCL) having an optical cavity and emitting at an emission wavelength , said VCL comprising a plurality of layers , a multi-layer first mirror , a multi-layer second mirror , an interband cascade gain region , a first injection contact , a second injection contact , and a refractive index waveguide comprising an inner region of a higher distributed refractive index and an outer region of lower distributed refractive , wherein said higher distributed refractive index exceeds said lower distributed refractive index by less than about 0.12.2. The VCL of claim 1 , wherein a percentage of injected current overlapping with the optical mode is greater than about 25%.3. The VCL of claim 1 , wherein said VCL emits in a single transverse and longitudinal mode.4. The VCL of claim 1 , wherein said refractive index waveguide comprises an undercut layer with an undercut thickness.5. The VCL of claim 4 , wherein said undercut layer comprises at least one material from the group consisting of InAsSb and InAs.6. The VCL of claim 4 , wherein said undercut thickness is less than about a quarter of said emission wavelength divided by refractive index of undercut material.7. The VCL of claim 1 , wherein said refractive index waveguide comprises an oxidized layer of AlGaAs having an oxide thickness.8. The VCL of claim 7 , wherein said oxide thickness is less than about a quarter of said emission wavelength divided by the unoxidized region refractive index.9. The VCL of claim 7 , wherein said oxidized layer comprises a tapered thickness.10. The VCL of claim 1 , wherein said ...

Подробнее
Номер записи: 81
13-05-2021 дата публикации

SURFACE EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME

Номер: US20210143608A1
Автор: JUNG Se Yeon, Lee Tae Yong, Lee Yong Gyeong
Принадлежит: LG INNOTEK CO., LTD.

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening. The metal electrode layer may electrically contact the second reflective layer between the multiple second areas. 1. A surface emitting laser device comprising:a substrate;a first reflective layer disposed on the substrate;an active layer disposed on the first reflective layer;an aperture layer disposed on the active layer and including an opening;a second reflective layer disposed on the active layer;a transparent electrode layer disposed on the second reflective layer; anda metal electrode layer disposed on the transparent electrode layer,wherein the transparent electrode layer includes a first region vertically overlapping the opening and a plurality of second regions extending from the first region,wherein the plurality second regions are spaced apart from each other on an outer side of the opening along a circumferential direction of the opening, andwherein the metal electrode layer electrically contacts the second reflective layer between the plurality of second regions. ...

Подробнее
Номер записи: 82
03-05-2018 дата публикации

SURFACE EMITTING LASER, INFORMATION OBTAINING APPARATUS, AND IMAGING APPARATUS

Номер: US20180123319A1
Автор: Nagatomo Yasuhiro
Принадлежит:

The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (), an active layer () disposed on the first reflector (), a beam portion () disposed over the active layer () with an air gap therebetween, and a second reflector () disposed on the beam portion (). The second reflector () has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion () has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers. 1. A wavelength-tunable surface emitting laser comprising:a first reflector;an active layer disposed on the first reflector;a beam portion disposed over the active layer with an air gap therebetween; anda second reflector disposed on the beam portion,wherein the second reflector has a distributed Bragg reflector consisting of a stack of dielectric layers, andwherein the beam portion has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.2. The surface emitting laser according to claim 1 , wherein the optical thickness of the beam portion is greater than or equal to the center wavelength of a wavelength band having a reflectance of 99.5% or more in the reflectance spectrum of the second reflector.3. The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the second reflector has a configuration in which first layers and second layers having a refractive index lower than that of the first layers are alternately stacked.5. The surface emitting laser according to claim 1 , wherein the distributed Bragg reflector of the beam portion has a configuration in which third layers and fourth layers having a refractive index lower than that of the third layers are alternately stacked.6. The surface emitting laser according to claim 5 , wherein the semiconductor layer closest to the active layer in the distributed Bragg reflector ...

Подробнее
Номер записи: 83
25-08-2022 дата публикации

Long wavelength vcsel and integrated vcsel systems on silicon substrates

Номер: US20220271499A1
Автор: Elad Mentovich, Isabelle Cestier, Vladimir Iakovlev, Yuri Berk
Принадлежит: MELLANOX TECHNOLOGIES LTD

VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.

Подробнее
Номер записи: 84
16-04-2020 дата публикации

SINGLE MODE VCSELS WITH LOW THRESHOLD AND HIGH-SPEED OPERATION

Номер: US20200119521A1
Автор: Feng Milton, Yu Xin
Принадлежит:

Vertical-cavity surface-emitting lasers (VCSELs) and methods for making such are provided. The VCSELs include stepped upper reflectors having respective differently-sized apertures. This allows the lower portion of the reflector to have formed therein a wider-diameter aperture to allow for increased current injection. The upper portion of the reflector has formed therein a narrower-diameter, mode-selecting aperture to allow higher-order modes to be reduced, leading to single-mode operation. The VCSELs are thus capable of higher-power emission in a single mode, allowing for longer-distance signaling over optical fiber, despite modal dispersion within the fiber and/or at the coupling between the VCSEL and the fiber. The two differently-sized apertures can be formed via respective lateral oxidation processes following etch-down to form the respective steps of the upper reflector. Differences in composition across the upper reflector results in temperature-dependence of the oxidation process, allowing the apertures to be formed with different sizes. 1. A vertical-cavity surface-emitting laser comprising:a base reflective element;a gain element;a current-injection reflective element, wherein the current-injection reflective element comprises a first portion of a first distributed Bragg reflector (DBR), wherein the current-injection reflective element includes a current-injection aperture having a first diameter, wherein the gain element is disposed between the base reflective element and the current-injection reflective element, and wherein at least a portion of the current-injection element has a second diameter that is greater than the first diameter;an electrode electrically coupled to the current-injection reflective element such that current passing though the electrode into the current-injection reflective element passes into the gain element via the current-injection aperture; anda mode-selective reflective element, wherein the mode-selective reflective element ...

Подробнее
Номер записи: 85
27-05-2021 дата публикации

EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE

Номер: US20210159669A1
Автор: Chang-Hasnain Constance J., Kapraun Jonas H., Kolev Emil, Wang Jiaxing
Принадлежит: The Regents of the University of California

A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication. 1. A method of fabricating GaAs based semiconductor device structures , comprising:(a) performing a growing process in a reaction chamber by growing elements of a semiconductor device structure with a first type of doping over a semiconductor substrate having the first type of doping and ending with growing a final GaAs based layer of the device;(b) performing a capping process by depositing a phosphor containing material cap layer over the final GaAs based layer formed during the growing process, wherein said phosphor containing material cap layer protects elements of the semiconductor device structure from oxidizing when exposed to atmospheric conditions;(c) performing a decomposition process by selectively decomposing the phosphor containing material cap layer by using high temperature desorption; and(d) performing a regrowing process in which other layers of the GaAs based semiconductor device structure are grown.2. The method of claim 1 , further comprising forming a contact layer over the final GaAs based layer after the decomposition process and prior to fabricating additional layers of the semiconductor device structure.3. The method of claim 1 , wherein said semiconductor substrate is contained on a semiconductor wafer upon ...

Подробнее
Номер записи: 86
27-05-2021 дата публикации

SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER, SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND DETECTION APPARATUS

Номер: US20210159671A1
Автор: Fujiwara Masayuki, Hanaoka Katsunari
Принадлежит:

A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface. 1. A surface emitting laser element comprising:a first reflecting mirror;an active layer over the first reflecting mirror;a second reflecting mirror over the active layer; anda multilayer film over the second reflecting mirror,the multilayer film having a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror,the multilayer film including, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index,the multilayer film having a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface, the peripheral portion including the side surface.2. The surface emitting laser element according to claim 1 , wherein the one film is the second film included in an uppermost one of the two or more pairs.3. The surface emitting laser element according to claim 1 , wherein the multilayer film has two or more pairs of the first film and the second film entirely in the center portion and the peripheral portion.4. The surface emitting laser element according to ...

Подробнее
Номер записи: 87
23-04-2020 дата публикации

LOW IMPEDANCE VCSELS

Номер: US20200127442A1
Автор: Mathai Sagi, Sorin Wayne Victor, Tan Michael Renne Ty
Принадлежит:

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. A method , comprising:creating on a substrate a p-type distributed Bragg reflector (p-DBR) layer having a p-type ohmic (p-ohmic) contact layer, wherein the p-DBR layer comprises an alternating stack of high refractive index layers and low refractive index layers, wherein the p-ohmic contact layer has an opening;applying a wet oxidation to the p-DBR layer to oxidize at least one low refractive index layer to form an oxide aperture, wherein the oxide aperture is aligned with the opening;filling the opening in the p-ohmic contact layer with a dielectric material; andencapsulating the dielectric material with a metal layer coupled to the p-ohmic contact layer.10. The method of claim 9 , wherein the alternating stack of the p-DBR layer comprises less than 30 layers.11. The method of claim 9 , further comprising:applying a polyimide or a benzo-cyclo-butane to the p-DBR layer;creating vias to the p-ohmic contact layer and an n-type ohmic (n-ohmic) contact layer; andadding a pad and interconnect metal over the polyimide or the benzo-cyclo-butane and coupled to the p-ohmic contact layer and the n-ohmic contact layer.12. The method of claim 9 , further comprising:creating on the substrate a n-type distributed Bragg reflector (n-DBR) layer; andcreating on the substrate a laser cavity layer adjacent to the n-DBR layer and the p-DBR layer,13. A method claim 9 , comprising ...

Подробнее
Номер записи: 88
03-06-2021 дата публикации

SURFACE EMITTING LASER, SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND DETECTION APPARATUS

Номер: US20210167579A1
Автор: Harasaka Kazuhiro, Izumiya Kazuma, Jikutani Naoto, SUZUKI Ryoichiro
Принадлежит:

A surface emitting laser includes a first reflecting mirror; a second reflecting mirror; an active region between the first reflecting mirror and the second reflecting mirror. The first reflecting mirror and the second reflecting mirror each include a plurality of low refractive-index layers having a first refractive index; and a plurality of high refractive-index layers having a second refractive index higher than the first refractive index. The plurality of low refractive-index layers and the plurality of high refractive-index layers are alternated one after another. The plurality of high refractive-index layers of the first reflecting mirror includes a first layer; and a second layer having a higher thermal diffusion property in an in-plane direction than the first layer. 1. A surface emitting laser comprising:a first reflecting mirror;a second reflecting mirror;an active region between the first reflecting mirror and the second reflecting mirror,the first reflecting mirror and the second reflecting mirror each including:a plurality of low refractive-index layers having a first refractive index; anda plurality of high refractive-index layers having a second refractive index higher than the first refractive index,the plurality of low refractive-index layers and the plurality of high refractive-index layers being alternated one after another, a first layer; and', 'a second layer having a higher thermal diffusion property in an in-plane direction than the first layer., 'the plurality of high refractive-index layers of the first reflecting mirror including2. The surface emitting laser according to claim 1 ,wherein the second layer has a higher thermal conductivity than the first layer.3. The surface emitting laser according to claim 1 ,wherein the second layer is thicker than the first layer.4. The surface emitting laser according to claim 1 ,wherein the second layer is a GaAs layer.5. The surface emitting laser according to claim 1 ,wherein the second layer has an ...

Подробнее
Номер записи: 89
17-05-2018 дата публикации

LIGHT EMITTING ELEMENT ARRAY AND OPTICAL TRANSMISSION DEVICE

Номер: US20180138660A1
Автор: HAYAKAWA Junichiro, MURAKAMI Akemi, NAKAYAMA Hideo, OTSUKA Tsutomu
Принадлежит: FUJI XEROX CO., LTD.

A light emitting element array includes plural light emitting elements connected in parallel to each other by a wiring connected to a terminal configured to supply a current. The number of light emitting elements which have the shortest path length among path lengths on the wiring from the terminal to the respective light emitting elements along a path of the current is one. 1. A light emitting element array comprising:a plurality of light emitting elements connected in parallel to each other by a wiring connected to a terminal configured to supply a current,wherein the number of light emitting elements which have the shortest path length among path lengths on the wiring from the terminal to the plurality of respective light emitting elements along a path of the current is one.2. The light emitting element array according to claim 1 , whereinthe number of the plurality of light emitting elements is three, andthe number of the light emitting elements having the shortest path length is one.3. The light emitting element array according to claim 1 , whereinthe number of the plurality of light emitting elements is four, andthe number of the light emitting elements having the shortest path length is four.4. The light emitting element array according to claim 1 , wherein all of the plurality of light emitting elements have different path lengths on the wiring from the terminal to the plurality of respective light emitting elements along the path of the current.5. The light emitting element array according to claim 2 , wherein all of the plurality of light emitting elements have different path lengths on the wiring from the terminal to the plurality of respective light emitting elements along the path of the current.6. The light emitting element array according to claim 3 , wherein all of the plurality of light emitting elements have different path lengths on the wiring from the terminal to the plurality of respective light emitting elements along the path of the current.7. ...

Подробнее
Номер записи: 90
14-08-2014 дата публикации

Surface-emitting laser and image forming apparatus using the same

Номер: US20140227007A1
Автор: Mitsuhiro Ikuta, Tetsuya Takeuchi, Yasuhisa Inao
Принадлежит: Canon Inc

A surface-emitting laser that can prevent delamination at the interface of a selective oxidation layer and a spacer layer, while suppressing any rise of voltage, to improve the reliability of operation.

Подробнее
Номер записи: 91
30-04-2020 дата публикации

Semiconductor laser

Номер: US20200136348A1
Автор: Andreas Wojcik, Berthold Hahn, Christian Muller, Hubert Halbritter, Isabel OTTO, Josip Maric, Mariel Grace Jama, Martin Rudolf Behringer, Roland Heinrich Enzmann
Принадлежит: OSRAM Opto Semiconductors GmbH

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

Подробнее
Номер записи: 92
30-04-2020 дата публикации

Method of manufacturing surface emitting laser

Номер: US20200136351A1
Автор: Yukihiro Tsuji
Принадлежит: Sumitomo Electric Industries Ltd

A method of manufacturing a surface emitting laser includes: preparing a substrate on which a lower reflector layer, an active layer and an upper reflector layer are formed in this order from the bottom, each of the lower reflector layer and the upper reflector layer including a semiconductor multilayer film; forming an insulating film on the upper reflector layer; cleaning the substrate using isopropyl alcohol after the forming; patterning a photoresist by applying the photoresist on the insulating film and exposing the photoresist, after the cleaning; and forming a high resistance region by implanting ions into portions of the lower reflector layer, the active layer and the upper reflector layer exposed from the photoresist, after the patterning; wherein the cleaning includes cleaning the substrate with a liquid of the isopropyl alcohol and drying the substrate in a vapor of the isopropyl alcohol.

Подробнее
Номер записи: 93
30-04-2020 дата публикации

METHOD OF MANUFACTURING SURFACE EMITTING LASER

Номер: US20200136352A1
Автор: TSUJI Yukihiro
Принадлежит: Sumitomo Electric Industries, Ltd.

A method of manufacturing a surface emitting laser includes: forming a mesa by performing etching on a lower reflector layer, an active layer, and an upper reflector layer; forming a current narrowing layer by oxidizing a part of the upper reflector layer; exposing a substrate by performing etching on the lower reflector layer, the active layer, and the upper reflector layer, using a chlorine-containing gas; cleaning the substrate; performing heat treatment on the substrate; forming an insulating film covering a surface of the substrate; forming an electrode on the lower reflector layer and the upper reflector layer; and performing heat treatment on the substrate, wherein a temperature in the first heat treatment is lower than a temperature in the forming the current narrowing layer. 1. A method of manufacturing a surface emitting laser ,the method comprising:a step of preparing a substrate containing gallium and arsenic, a lower reflector layer, an active layer, and an upper reflector layer being formed sequentially in the substrate, the lower reflector layer including a semiconductor multilayer film, the upper reflector layer including a semiconductor multilayer film;a step of forming a mesa by performing etching on the lower reflector layer, the active layer, and the upper reflector layer;a step of forming a current narrowing layer by oxidizing a part of the upper reflector layer, after the step of forming the mesa;a step of exposing the substrate by performing etching on the lower reflector layer, the active layer, and the upper reflector layer, using a chlorine-containing gas;a step of cleaning the substrate, after the step of exposing the substrate;a first heat treatment step of performing heat treatment on the substrate, after the step of cleaning;a step of forming an insulating film covering a surface of the substrate exposed by the etching, after the first heat treatment step;a step of forming an electrode on the lower reflector layer and the upper ...

Подробнее
Номер записи: 94
24-05-2018 дата публикации

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20180145483A1
Автор: FUTAGAWA NORIYUKI, HAMAGUCHI TATSUSHI, Kuramoto Masaru, Maeda Yuki
Принадлежит:

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. 1. A light emitting element comprising:a layered structure body formed by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer;a first electrode and a first light reflecting layer; anda second electrode and a second light reflecting layer formed from a multilayer film formed on the second surface of the second compound semiconductor layer,wherein a concavity with a forward tapered side surface is formed on the first surface of the first compound semiconductor layer,the first light reflecting layer is formed on at least the concavity, andthe first electrode is formed on at least the first surface of the first compound ...

Подробнее
Номер записи: 95
25-05-2017 дата публикации

SURFACE EMITTING LASER, LASER ARRAY, LIGHT SOURCE DEVICE, INFORMATION ACQUISITION DEVICE, AND OPTICAL COHERENCE TOMOGRAPHY APPARATUS

Номер: US20170149212A1
Автор: Uchida Mamoru, Uchida Tatsuro
Принадлежит:

Provided is a surface emitting laser that is to be excited by an external light source and in which a light-emitting position is defined. 1. A surface emitting laser comprising:a pair of reflecting mirrors; andan active layer arranged between the pair of reflecting mirrors,wherein the active layer is to be excited by light radiated from an external light source,wherein a gap is formed between the active layer and one of the pair of reflecting mirrors,wherein an oscillation wavelength of the surface emitting laser is changed, andwherein a defining structure that defines a light-emitting region of the active layer is arranged in at least one of a region between the pair of reflecting mirrors and a region in at least one of the pair of reflecting mirrors, andwherein, in the defining structure, a region excluding a region that corresponds to the light-emitting region is oxidized.2. (canceled)3. The surface emitting laser according to claim 1 ,wherein the defining structure is arranged between the pair of reflecting mirrors.4. The surface emitting laser according to claim 3 , further comprising:at least one semiconductor layer between one of the pair of reflecting mirrors and the active layer,wherein the defining structure is configured so that, in the at least one semiconductor layer, a region excluding a region that corresponds to a light-emitting region is oxidized.5. The surface emitting laser according to claim 1 ,wherein the defining structure is included in at least one of the pair of reflecting mirrors.6. The surface emitting laser according to claim 5 ,wherein the at least one of the pair of reflecting mirrors, which includes the defining structure, has a multilayer film.7. The surface emitting laser according to claim 6 ,wherein the multilayer film is a semiconductor multilayer film.8. The surface emitting laser according to claim 6 ,wherein the defining structure is configured so that a part of the multilayer film is oxidized and, in the multilayer film ...

Подробнее
Номер записи: 96
21-08-2014 дата публикации

Vertical Cavity Surface Emitting Laser With An Integrated Protection Diode

Номер: US20140233595A1
Автор: Ramana Murty
Принадлежит: Avago Technologies General IP Singapore Pte Ltd

A semiconductor device includes a vertical cavity surface emitting laser (VCSEL) with an integrated protection diode arranged between the VCSEL and an emitting surface. By locating the protection diode above the VCSEL, a minimal increase in substrate area is consumed to protect the VCSEL from electrostatic discharge events. A relatively small capacitance introduced by the protection diode, is controllably adjusted by one of the radial size of the protection diode and the thickness of the intrinsic layer therein. The relatively small capacitance introduced by the protection diode enables the VCSEL to operate at data rates above 10 Gb/s.

Подробнее
Номер записи: 97
02-06-2016 дата публикации

Semiconductor optical element and surface-emitting semiconductor optical element

Номер: US20160156154A1
Автор: Ayumi FUCHIDA, Naoki Nakamura
Принадлежит: Mitsubishi Electric Corp

A semiconductor optical element has a semiconductor substrate, a diffraction grating, a diffraction grating embedding layer, an active layer and a cladding layer. The diffraction grating includes a plurality of grating elements arranged on the semiconductor substrate along a direction (Z direction) in which laser light is emitted. Each grating element has a lower portion and an upper portion provided on the lower portion. The lower portions of the grating elements are connected to each other to form one layer in a lower section of the diffraction grating. The upper portion has a first refractive index and the lower portion has a second refractive index. A refractive index of the diffraction grating embedding layer is an intermediate value between the first and the second refractive index.

Подробнее
Номер записи: 98
07-05-2020 дата публикации

Semiconductor light-emitting device

Номер: US20200144784A1
Автор: Yuki Tanuma
Принадлежит: ROHM CO LTD

A semiconductor light-emitting device, includes: a semiconductor light-emitting element; a support including a base and a conductive part and configured to support the semiconductor light-emitting element; and a cover configured to overlap the semiconductor light-emitting element as viewed in a first direction, and to transmit light from the semiconductor light-emitting element, wherein the cover includes a base layer having a front surface and a rear surface which transmit the light from the semiconductor light-emitting element and face opposite sides to each other in the first direction, wherein the rear surface faces the semiconductor light-emitting element, wherein the base layer includes a plurality of undulation parts bonded to the support by a bonding material, and wherein the undulation parts are more uneven than the rear surface.

Подробнее
Номер записи: 99
07-05-2020 дата публикации

SINGLE-CHIP SERIES CONNECTED VCSEL ARRAY

Номер: US20200144791A1
Автор: CARSON Richard F., LI Nein-Yi, WARREN Mial E.
Принадлежит:

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions. 1. A series-connected vertical-cavity surface-emitting laser (VCSEL) array , comprising:a single semiconductor die including a semiconductor substrate and a conductive cathode layer, the conductive cathode layer including a series of adjoining electrically conductive regions, each electrically conductive region separated from an adjoining electrically conductive region by a non-conductive isolation region, each electrically conductive region including a plurality of VCSEL elements having anode contacts and a plurality grounding elements having common cathode contacts, each grounding element connected directly to the conductive cathode layer to form a common ground connection; anda sub-mount including a metallization pattern serially connecting each electrically conductive region to an adjoining electrically conductive region by connecting to the anode contacts of each electrically conductive region and then connecting the cathode contacts of each electrically conductive region to the anode contacts of the adjoining ...

Подробнее
Номер записи: 100