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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 24836. Отображено 100.
05-01-2012 дата публикации

Semiconductor optical amplifier

Номер: US20120002271A1
Принадлежит: Sony Corp, Tohoku University NUC

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W out , and W in , W out >W in is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

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28-09-2018 дата публикации

Инжекционный лазер с переключаемым спектром генерации

Номер: RU0000183644U1

Полезная модель относится к квантовой электронике. Инжекционный лазер с переключаемым спектром генерации включает подложку, на одной стороне которой сформирован сплошной омический контакт, а на другой стороне подложки выращена полупроводниковая гетероструктура, ограниченная сколотыми гранями, содержащая оптический резонатор, при этом гетероструктура содержит последовательно нанесенные на подложку слой эмиттера n-типа проводимости, первый волноводный слой, активную область, содержащую по меньшей мере один квантово-размерный активный слой в виде квантовой ямы, второй волноводный слой, слой эмиттера p-типа проводимости, на внешний поверхности которого нанесены первый и второй омические контакты, разделенные диэлектрической областью шириной не менее 2 мкм и образующие секцию управления и секцию накачки лазера. Длина L резонатора, длина L p секции накачки и толщина d слоя квантовой ямы, обеспечивающая наличие как минимум двух уровней размерного квантования в активной области, удовлетворяют определенным соотношениям. Технический результат полезной модели заключается в расширении спектра лазерной генерации до 100 нм. 5 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 183 644 U1 (51) МПК H01S 5/34 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01S 5/0607 (2018.05); H01S 5/3412 (2018.05); H01S 5/125 (2018.05) (21)(22) Заявка: 2018107623, 01.03.2018 (24) Дата начала отсчета срока действия патента: Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 01.03.2018 (45) Опубликовано: 28.09.2018 Бюл. № 28 2548034 C2, 10.04.2015. WO 2009019507 A1, 12.02.2009. RU 2230410 C1, 10.06.2004. (54) ИНЖЕКЦИОННЫЙ ЛАЗЕР С ПЕРЕКЛЮЧАЕМЫМ СПЕКТРОМ ГЕНЕРАЦИИ (57) Реферат: Полезная модель относится к квантовой второй волноводный слой, слой эмиттера p-типа электронике. Инжекционный лазер с проводимости, на внешний поверхности которого переключаемым спектром генерации включает нанесены первый и второй омические контакты, ...

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01-10-2019 дата публикации

Одночастотный квантово-каскадный лазер среднего инфракрасного диапазона

Номер: RU0000192784U1

Квантовый каскадный лазер на основе соединений А3В5 содержит подложку (2) из InP n-типа проводимости, на которой последовательно сформированы буферный слой (3) InP n-типа проводимости, слой (4) нижней волноводной обкладки, на котором выполнен полосок (5). Полосок (5) включает последовательно сформированные квантово-каскадную активную область (6), дифракционную решетку (7) распределенной обратной связи, слой (8) верхней волноводной обкладки и верхний контактный слой (9) n-типа проводимости. На тыльной стороне подложки (2) и на верхнем контактном слое нанесены соответственно металлические контакты (1) и (10). Штрихи (11) решетки (7) распределенной обратной связи выполнены в форме эквидистантных дуг концентрических окружностей, при этом радиус Rпервой от центра окружности равен не менее 20⋅λ, а полосок (5) выполнен в форме прямоугольной трапеции, основания которой являются передней и задней выходными гранями (12) и (13) лазера, а боковые стороны представляют собой отрезки прямых, проведенных из центра концентрических окружностей, дугами которых являются штрихи (11) дифракционной решетки (7) распределенной обратной связи. В квантово-каскадном лазере исключен срыв одночастотной генерации из-за отражения от плоских выходных граней лазера. 1 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 192 784 U1 (51) МПК H01S 5/12 (2006.01) H01S 5/343 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01S 5/12 (2019.05); H01S 5/3438 (2019.05) (21)(22) Заявка: 2019122072, 10.07.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 01.10.2019 Адрес для переписки: 194021, Санкт-Петербург, ул. Политехническая, 26, ФТИ им. А.Ф. Иоффе, пат.-лицензионная служба, Белову В.И. (56) Список документов, цитированных в отчете о поиске: JP 2018046128 A, 22.03.2018. US 20150311665 A1, 29.10.2015. US 20170033536 A1, 02.02.2017. RU 181198 U1, 05.07.2018. U 1 1 9 2 7 8 4 R U (3) InP n-типа проводимости, слой (4) ...

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27-04-2020 дата публикации

Линейный резонатор волоконного лазера dbr

Номер: RU0000197439U1

Полезная модель относится к лазерной технике, в частности, к волоконным лазерам с линейным резонатором в конфигурации DBR. Линейный резонатор волоконного лазера DBR содержит заполненный вязкой жидкостью корпус, внутри которого размещены пьезокерамический преобразователь и оптоволокно. При этом корпус выполнен в форме параллелепипеда из твердого материала с высокой теплопроводностью, между корпусом и пьезокерамическим преобразователем размещен сэндвич из не менее одного слоя вибродемпфирующего материала, пьезокерамический преобразователь жестко соединен с находящимся под натяжением отрезком оптоволокна с нанесенной на него узкополосной брэгговской решеткой, а свободный подводящий к резонатору участок оптоволокна зафиксирован в отверстиях корпуса. 9. Техническим результатом предлагаемого решения является повышение стабильности излучения лазера. 5 з.п. ф-лы, 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 197 439 U1 (51) МПК G02B 6/02 (2006.01) H01S 3/06 (2006.01) H01S 5/125 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК G02B 6/022 (2020.02); H01S 5/125 (2020.02); H01S 3/067 (2020.02) (21)(22) Заявка: 2020100884, 14.01.2020 (24) Дата начала отсчета срока действия патента: 27.04.2020 Приоритет(ы): (22) Дата подачи заявки: 14.01.2020 (45) Опубликовано: 27.04.2020 Бюл. № 12 1 9 7 4 3 9 R U (54) ЛИНЕЙНЫЙ РЕЗОНАТОР ВОЛОКОННОГО ЛАЗЕРА DBR (57) Реферат: Полезная модель относится к лазерной вибродемпфирующего материала, технике, в частности, к волоконным лазерам с пьезокерамический преобразователь жестко линейным резонатором в конфигурации DBR. соединен с находящимся под натяжением Линейный резонатор волоконного лазера DBR отрезком оптоволокна с нанесенной на него содержит заполненный вязкой жидкостью корпус, узкополосной брэгговской решеткой, а внутри которого размещены пьезокерамический свободный подводящий к резонатору участок преобразователь и оптоволокно. При этом корпус оптоволокна зафиксирован в отверстиях ...

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26-01-2012 дата публикации

Surface emitting laser, light source, and optical module

Номер: US20120020383A1
Принадлежит: Furukawa Electric Co Ltd

A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

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02-02-2012 дата публикации

Optical Apparatus for Forming a Tunable Cavity

Номер: US20120027348A1
Принадлежит: Hewlett Packard Development Co LP

An optical apparatus includes an optical fiber formed of a core surrounded by cladding, in which the optical fiber includes an end portion. In addition, an optical layer composed of a material having a relatively high refractive index is positioned on the end portion, in which the optical layer includes a non-periodic sub-wavelength grating positioned in optical communication with the core.

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23-02-2012 дата публикации

Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device

Номер: US20120044481A1
Принадлежит: Anritsu Corp

[Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device. [Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13 a with a gain wavelength λ 1 of about 1.55 μm and an active layer 13 b with a gain wavelength λ 2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ 1 and λ 2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ 2 is formed near the active layer 13 b with the short gain wavelength λ 2 and near a butt-joint coupling portion 19 between the active layers 13 a and 13 b, an upper electrode provided above the active layer 13 b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13 b when a driving current is applied to the active layer 13 a.

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01-03-2012 дата публикации

Optoelectronic semiconductor bodies having a reflective layer system

Номер: US20120049228A1
Принадлежит: OSRAM Opto Semiconductors GmbH

An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

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01-03-2012 дата публикации

Serially interconnected vertical-cavity surface emitting laser arrays

Номер: US20120051384A1
Принадлежит: Aerius Photonics LLC

Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

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08-03-2012 дата публикации

Semiconductor optical element

Номер: US20120056293A1
Автор: Kazuhisa Takagi
Принадлежит: Mitsubishi Electric Corp

A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

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15-03-2012 дата публикации

Measuring Instrument for Determining the Tissue Alcohol Concentration

Номер: US20120062879A1
Принадлежит: ROBERT BOSCH GMBH

A measuring instrument for determining the concentration of components in the body tissue by reflection spectroscopy is disclosed. In order, inter alia, to increase the functional reliability in the case of vibrations, the measuring instrument includes a diode laser with at least one laser diode and a waveguide structure, which has an external resonator, with a wavelength selective element, for each laser diode. In the process, the radiation generated by a laser diode is coupleable into the waveguide structure and the corresponding resonator and once again decoupleable from the resonator and the waveguide structure. Moreover, a corresponding method and a motor vehicle equipped therewith are disclosed.

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22-03-2012 дата публикации

Multi-wavelength high output laser source assembly with precision output beam

Номер: US20120068001A1
Принадлежит: Individual

A laser source assembly ( 210 ) for generating an assembly output beam ( 212 ) includes a first laser source ( 218 A), a second laser source ( 218 B), and a dispersive beam combiner ( 222 ). The first laser source ( 218 A) emits a first beam ( 220 A) having a first center wavelength, and the second laser source ( 218 B) emits a second beam ( 220 B) having a second center wavelength that is different than the first center wavelength. The dispersive beam combiner ( 222 ) includes a common area 224 that combines the first beam ( 220 A) and the second beam ( 220 B) to provide the assembly output beam ( 212 ). The first beam ( 220 A) impinges on the common area ( 224 ) at a first beam angle ( 226 A), and the second beam ( 220 B) impinges on the common area ( 224 ) at a second beam angle ( 226 B) that is different than the first beam angle ( 226 A). Further, the beams ( 220 A) ( 220 B) that exit from the dispersive beam combiner ( 222 ) are substantially coaxial, are fully overlapping, and are co-propagating.

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22-03-2012 дата публикации

Frequency tunable terahertz transceivers and method of manufacturing dual wavelength laser

Номер: US20120068090A1
Автор: Kyung Hyun Park

Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate and output optical signals of respectively different wavelengths; and an optical device receiving the outputted optical signals to generate a terahertz wave.

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19-04-2012 дата публикации

Intra-cavity optical parametric oscillator

Номер: US20120093179A1
Принадлежит: University of St Andrews

An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

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19-04-2012 дата публикации

DFB Laser Diode Having a Lateral Coupling for Large Output Power

Номер: US20120093187A1
Принадлежит: Individual

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate ( 10 ), at least one active layer ( 40 ) that is arranged on the semiconductor substrate, at least one ridge ( 70 ) that is arranged above the active layer ( 40 ), at least one periodic surface structure ( 110 ) that is arranged next to the ridge ( 70 ) above the active layer ( 40 ) and at least one wave guide layer ( 30, 50 ) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.

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19-04-2012 дата публикации

Surface emitting laser, surface emitting laser array, and optical apparatus having surface emitting laser array

Номер: US20120093188A1
Автор: Mitsuhiro Ikuta
Принадлежит: Canon Inc

There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

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19-04-2012 дата публикации

Multimode vertical-cavity surface-emitting laser arrays

Номер: US20120093189A1
Принадлежит: Hewlett Packard Development Co LP

Various embodiments of the present invention are directed to monolithic VCSEL arrays where each VCSEL can be configured to lase at a different wavelength. In one embodiment, a monolithic surface-emitting laser array includes a reflective layer, a light-emitting layer ( 102 ), and a grating layer ( 112 ) configured with two or more non-periodic, sub-wavelength gratings. Each grating is configured to form a resonant cavity with the reflector, and each grating is configured with a grating pattern that shapes one or more internal cavity modes and shapes one or more external transverse modes emitted through the grating.

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26-04-2012 дата публикации

Long semiconductor laser cavity in a compact chip

Номер: US20120099613A1
Принадлежит: Individual

Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

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03-05-2012 дата публикации

High fill-factor efficient vertical-cavity surface emitting laser arrays

Номер: US20120106585A1
Автор: Chad Wang, Jonathan Geske
Принадлежит: Individual

An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

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17-05-2012 дата публикации

Quantum Cascade Lasers with Electrically Tunable Emission Wavelengths

Номер: US20120120972A1
Принадлежит: Individual

The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

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24-05-2012 дата публикации

Vertical cavity surface emitting laser with active carrier confinement

Номер: US20120128020A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS NV

It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.

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14-06-2012 дата публикации

Optical network structures for multi-core central processor unit

Номер: US20120148244A1

Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

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28-06-2012 дата публикации

Actively Mode Locked Laser Swept Source for OCT Medical Imaging

Номер: US20120162662A1
Принадлежит: Axsun Technologies LLC

An optical coherence analysis system uses a laser swept source that is constrained to operate in a mode locked condition. This is accomplished by synchronously changing the laser cavity's gain and/or phase based on the round trip travel time of light in the cavity. This improves high speed tuning by taking advantage of frequency shifting mechanisms within the cavity and avoids chaotic laser behavior.

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16-08-2012 дата публикации

Method And System For A Light Source Assembly Supporting Direct Coupling To An Integrated Circuit

Номер: US20120205524A1

Methods and systems for a light source assembly for coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The light source assembly may comprise a laser, a microlens, a turning mirror, and an optical bench, and may generate an optical signal utilizing the laser, focus the optical signal utilizing the microlens, and reflect the optical signal at an angle defined by the turning mirror. The reflected optical signal may be transmitted out of the assembly to grating couplers in the photonically enabled CMOS chip. The assembly may comprise a non-reciprocal polarization rotator, comprising a latching faraday rotator. The assembly may comprise a reciprocal polarization rotator, which may comprise a half-wave plate comprising birefringent materials operably coupled to the optical bench. The turning mirror may be integrated in the optical bench and may reflect the optical signal to transmit through a lid operably coupled to the optical bench.

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23-08-2012 дата публикации

driver for supplying modulated current to a laser

Номер: US20120213237A1
Автор: Iain Ross Mactaggart
Принадлежит: Tyco Electronics Corp

A driver device for a laser includes a control device configured to generate a control current, an NPN differential amplifier connected to the control device and configured to superimpose a modulation current onto the control current to generate a combined current, and a laser activation switch coupled to the output of the NPN differential amplifier, the laser activation switch operating the laser utilizing the combined current. Also described herein is a communication system including a driver device.

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13-09-2012 дата публикации

Gan laser element

Номер: US20120230357A1
Принадлежит: Sharp Corp

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

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20-09-2012 дата публикации

Light emitting element and method for manufacturing same

Номер: US20120235117A1
Принадлежит: Hokkaido University NUC

Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

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27-09-2012 дата публикации

Gain-clamped semiconductor optical amplifiers

Номер: US20120243075A1
Принадлежит: Individual

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

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27-09-2012 дата публикации

Optical coupling element and method of manufacturing the same

Номер: US20120243835A1
Принадлежит: Individual

According to one embodiment, an optical coupling element comprises an optical waveguide, a ferrule provided with a holding hole which holds the optical waveguide, electrical read frame formed on the element mounting surface of the ferrule, an optical semiconductor element which is mounted on the element mounting surface of the ferrule and connected to the electrical read frame, and a transparent adhesive which fills the gap between the optical semiconductor element and the optical waveguide. At least one side of the optical semiconductor element partially falls within a region obtained by extending the holding hole in the ferrule toward the optical semiconductor element.

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04-10-2012 дата публикации

Diode laser

Номер: US20120250712A1
Автор: Bernd Eppich
Принадлежит: Forschungsverbund Berlin FVB eV

A diode laser is provided with wavelength stabilization and vertical collimation of the emitted radiation, which allows a small distance of the volume Bragg grating from the emitting surface, a small vertical diameter of the collimated beam and also compensation for manufacturing tolerances affecting the shape of the grating and the lens. The diode laser comprises an external frequency-selective element for wavelength stabilization of the laser radiation, wherein the external frequency-selective element comprises an entry surface facing the exit facet and an exit surface facing away from the exit facet and is designed as a volume Bragg grating; and wherein the external frequency-selective element is designed in such a manner that the divergence of the radiation emitting from the exit facet is reduced during passage through the external frequency-selective element.

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04-10-2012 дата публикации

Optoelectronic Semiconductor Component

Номер: US20120250715A1
Принадлежит: OSRAM Opto Semiconductors GmbH

In at least one embodiment of the optoelectronic semiconductor component ( 1 ), the latter comprises an epitaxially grown semiconductor body ( 2 ) with at least one active layer ( 3 ). Furthermore, the semiconductor body ( 2 ) of the semiconductor component ( 1 ) comprises at least one barrier layer ( 4 ), the barrier layer ( 4 ) directly adjoining the active layer ( 3 ). A material composition and/or a layer thickness of the active layer ( 3 ) and/or of the barrier layer ( 4 ) is varied in a direction of variation or a longitudinal direction (L), perpendicular to a direction of growth (G) of the semiconductor body ( 2 ). By varying the material composition and/or the layer thickness of the active layer ( 3 ) and/or of the barrier layer ( 4 ), an emission wavelength (λ) of a radiation (R) generated in the active layer ( 3 ) is likewise adjusted in the direction of variation or in the longitudinal direction (L).

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11-10-2012 дата публикации

Beat signal generating device for use in a terahertz system, terahertz system and use of a beat signal generating device

Номер: US20120257645A1
Автор: Bernd Sartorius

The invention relates to a beat signal generating device for use in a Terahertz system, comprising a first monomode laser for generating radiation of a first wavelength; a second monomode laser for generating radiation of a second wavelength different from the first wavelength; a first and a second output port; a phase modulating unit for modifying both the phase of radiation generated by the first laser and the phase of radiation generated the second laser, wherein the beat signal generating device is configured in such a way that the radiation generated by the first laser is transmitted through the second laser and superposed with the radiation generated by the second laser at the second output port, and the radiation generated by the second laser is transmitted through the first laser and superposed with the radiation generated by the first laser at the first output port, such that a first beat signal will be emitted at the first output port and a second beat signal will be emitted at the second output port, wherein the phase between the first and the second beat signal can be adjusted by means of the phase modulating unit. The invention also relates to a Terahertz system and the use of a beat signal generating device.

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11-10-2012 дата публикации

Method of manufacturing a semiconductor laser

Номер: US20120258558A1
Принадлежит: Renesas Electronics Corp

Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ≦( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.

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25-10-2012 дата публикации

Laser characterization system and process

Номер: US20120268743A1
Принадлежит: Corning Inc, PRINCETON UNIVERSITY

A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.

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25-10-2012 дата публикации

Asymmetric dbr pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

Номер: US20120270346A1
Принадлежит: Finisar Corp

Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

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08-11-2012 дата публикации

Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same

Номер: US20120281726A1
Принадлежит: Sony Corp, Tohoku University NUC

A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

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15-11-2012 дата публикации

Germanium light-emitting element

Номер: US20120287959A1
Принадлежит: HITACHI LTD

A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

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22-11-2012 дата публикации

Light emitting device

Номер: US20120292654A1
Автор: Masamitsu Mochizuki
Принадлежит: Seiko Epson Corp

A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

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13-12-2012 дата публикации

Optical device, modulator module, and method for manufacturing the optical device

Номер: US20120314725A1
Принадлежит: Opnext Japan Inc

An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.

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20-12-2012 дата публикации

Optical semiconductor device, and manufacturing method thereof

Номер: US20120321244A1
Принадлежит: Opnext Japan Inc

The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.

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27-12-2012 дата публикации

Semiconductor laser element, method of manufacturing semiconductor laser element, and optical module

Номер: US20120327965A1
Принадлежит: HITACHI LTD

In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

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03-01-2013 дата публикации

Wavelength tunable laser diode

Номер: US20130003762A1
Автор: Toshimitsu Kaneko
Принадлежит: Sumitomo Electric Industries Ltd

A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light with a wavelength at which the one of the gain peaks and one of the reflection peaks coincides. In the present LD, both the gain spectrum and the reflection spectrum are modified by adjusting the temperature of the SG-DFB region and that of the CSG-DBR region independently.

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03-01-2013 дата публикации

Semiconductor laser device and circuit for and method of driving same

Номер: US20130003767A1
Принадлежит: Kaiam Corp

A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

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10-01-2013 дата публикации

Method for producing semiconductor optical integrated device

Номер: US20130012002A1
Принадлежит: Sumitomo Electric Industries Ltd

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

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17-01-2013 дата публикации

Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer

Номер: US20130015850A1
Принадлежит: National Semiconductor Corp

The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics.

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14-02-2013 дата публикации

Photonic crystal surface emission laser

Номер: US20130039375A1
Принадлежит: KYOTO UNIVERSITY, ROHM CO LTD

A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein a x1 , a x2 , a y , and n satisfy the following inequality:  1 a x   1 - 1 a x   2  ( 1 a x   1 + 1 a x   2 ) 2 + ( 2 a y ) 2 ≤ 1 n .

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28-02-2013 дата публикации

Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device

Номер: US20130051421A1
Принадлежит: Individual

A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

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14-03-2013 дата публикации

Method of manufacturing laser diode device

Номер: US20130065334A1
Автор: Takashi Motoda
Принадлежит: Mitsubishi Electric Corp

A method of manufacturing a laser diode device includes: forming semiconductor layers on top of one another and supported by a top surface of a semiconductor substrate, the semiconductor layers including an active layer, forming a separation trench by etching and removing portions of the semiconductor layers, from a top semiconductor layer to and including the active layer; scribing a groove in a bottom surface of the semiconductor substrate, directly opposite and along the separation trench; and propagating a crack from the groove, splitting the semiconductor substrate along the groove and forming a cleaved surface extending from the bottom surface of the semiconductor substrate to a bottom surface of the separation trench.

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21-03-2013 дата публикации

Method to switch emission wavelength of tunable laser diode

Номер: US20130070795A1
Принадлежит: Sumitomo Electric Industries Ltd

The method to change the emission wavelength of a tunable LD is disclosed. In an ordinary state, the method monitors conditions not only relating to determine the emission wavelength but conditions independent of the emission wavelength by an ordinary A/D-C implemented within the controller. Responding to an instruction to switch the emission wavelength, the controller only monitors the former conditions affecting the determination of the emission wavelength. The sampling rate of the ordinary A/D-C is equivalently enhanced without installing an additional A/D-C.

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28-03-2013 дата публикации

SURFACE-EMISSION LASER DEVICES, SURFACE-EMISSION LASER ARRAY HAVING THE SAME, ELECTROPHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM

Номер: US20130077647A1
Принадлежит:

A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light. 1. A surface-emission laser device , comprising:an active layer;cavity spacer layers provided at both sides of said active layer;reflection layers provided at respective sides of said cavity spacer layers, said reflection layers reflecting an oscillation light oscillated in said active layer; anda selective oxidation layer provided between a first location and a second location, said first location being formed in said reflection layer corresponding to a node of a standing wave distribution of an electric field of a fundamental mode of said oscillation light and said second is location adjacent to said first location corresponding to said node of said standing wave distribution of the fundamental mode in said reflection layer in a direction away from said active layer, said second location corresponding to an anti node of said standing wave distribution.2. The surface-emission laser device as claimed in claim 1 , wherein said selective: oxidation layer is provided between said first location and a midpoint between said first and second locations.3. The surface-emission laser device as claimed in claim 1 , wherein said selective oxidation layer is provided generally at a midpoint between said first location and said ...

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25-04-2013 дата публикации

REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER FOR OPTICAL NETWORKS

Номер: US20130101297A1
Принадлежит: ALCATEL LUCENT

The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength. 1. An apparatus configured to amplify light at different wavelengths in an optical network , the apparatus having a waveguide , the waveguide comprising:a first active material configured to amplify light at a first wavelength received at a first end of the waveguide;a second active material configured to amplify light at a second wavelength;a first reflector located between the first and second active materials and which is configured to reflect light at the first wavelength in a direction toward the first end and which is configured to be substantially transparent to light at the second wavelength; anda second reflector adjacent the second active material which is configured to reflect light at the second wavelength in a direction toward the first end.2. The apparatus of claim 1 , wherein the first active material and/or the second active material comprise Gallium claim 1 , Indium claim 1 , Arsenide and/or Phosphide.3. The apparatus of claim 1 , whereinthe apparatus comprises a waveguide carrying the light at ...

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16-05-2013 дата публикации

Short light pulse generating device, terahertz wave generating device, camera, imaging device, and measuring device

Номер: US20130120584A1
Автор: Hitoshi Nakayama
Принадлежит: Seiko Epson Corp

A short light pulse generating device includes a light pulse generating part, a first pulse compressing part, a second pulse compressing part, and an amplifying part. The light pulse generating part is configured to generate light pulses, the light pulse generating part being a super luminescent diode. The first pulse compressing part is configured to perform pulse compression based on saturable absorption on the light pulses generated by the light pulse generating part. The second pulse compressing part is configured to perform pulse compression based on group velocity dispersion compensation on the light pulses that underwent the pulse compression by the first pulse compressing part. The amplifying part is provided between the first pulse compressing part and the second pulse compressing part, and configured to amplify the light pulses that underwent the pulse compression by the first pulse compressing part.

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16-05-2013 дата публикации

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Номер: US20130122617A1
Принадлежит: CONNECTOR OPTICS LLC

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

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23-05-2013 дата публикации

Diode laser and method for manufacturing a high-efficiency diode laser

Номер: US20130128911A1
Принадлежит: Forschungsverbund Berlin FVB eV

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

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06-06-2013 дата публикации

SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME

Номер: US20130142209A1
Принадлежит: NICHIA CORPORATION

A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements. 1. A method of manufacturing a semiconductor laser element comprising:preparing a wafer containing a plurality of semiconductor laser elements each having, in order from a lower surface side of the wafer, a substrate and a semiconductor structure having an optical waveguide;forming a plurality of first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide and extending in a direction intersecting the optical waveguide in a plan view;forming a plurality of second grooves on the one of the upper surface and the lower surface of the wafer having the first grooves formed thereon, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves;dividing the wafer along the first grooves to obtain a plurality of laser bars; anddividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain a plurality of the semiconductor laser elements. ...

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20-06-2013 дата публикации

MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS

Номер: US20130157397A1
Принадлежит: RICOH COMPANY, LTD.

A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body. 1. A manufacturing method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate , the manufacturing method comprising:a step of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on the substrate;a step of etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof;a step of selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide;a step of forming a separating groove at a position away from the mesa structure;a step of passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; anda step of coating a passivated part with a dielectric body.2. The manufacturing method according to claim 1 , wherein claim 1 ,in the step of passivating the outermost front surface of at ...

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27-06-2013 дата публикации

Directly-coupled wavelength-tunable external cavity laser

Номер: US20130163993A1

Disclosed is a directly-coupled wavelength-tunable external cavity laser including a gain medium that generates an optical signal by an applied bias current; an optical waveguide structure that is coupled to the gain medium to form a minor surface and causes lasing in the mirror surface when the applied bias current has a threshold or higher; and a radio frequency transmission medium that adds a radio frequency signal to the applied bias current to adjust an operating speed of the optical signal.

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11-07-2013 дата публикации

OPTICAL COMPONENT, LASER LIGHT SOURCE APPARATUS AND IMAGE DISPLAY APPARATUS EACH INCLUDING THE OPTICAL COMPONENT AND MANUFACTURING METHODS THEREFOR

Номер: US20130176541A1
Принадлежит: Panasonic Corporation

A laser light source apparatus is provided that can prevent an output mirror from breaking and can simplify adjustment of the attachment position of the output mirror. The laser light source apparatus includes: a semiconductor laser that outputs an excitation laser beam; a solid-state laser element that is excited by the excitation laser beam, to output a fundamental laser beam; and an output mirror that forms a resonator together with the solid-state laser element. The output mirror includes: a base part formed of a glass substrate; a convex part that is formed in the base part by dry etching; and a groove that is formed in the base part around the convex part while the dry etching proceeds. The convex part has a convex surface on which a film is formed. 1. An optical component comprising:a base part formed of a glass substrate;a convex part that is formed in the base part by dry etching; anda groove that is formed in the base part around the convex part while the dry etching proceeds.2. A laser light source apparatus comprising:a semiconductor laser that outputs an excitation laser beam;a solid-state laser element that is excited by the excitation laser beam, to thereby output a fundamental laser beam; andan output mirror that forms a resonator together with the solid-state laser element, wherein{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the output mirror comprises the optical component according to , the optical component comprising the convex part having a convex surface on which a film is formed.'}3. The laser light source apparatus according to claim 2 , whereinthe output mirror comprises the convex part having different radii of curvature.4. The laser light source apparatus according to claim 3 , wherein{'b': 1', '2', '1', '2, 'the convex part comprises: a first convex surface having a region with a radius of curvature R in an optical axis central portion; and a second convex surface having a region with a radius of curvature R (R>R) around the first ...

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11-07-2013 дата публикации

Small packaged tunable laser assembly

Номер: US20130177034A1
Принадлежит: Emcore Corp

A tunable laser configured in a small package coupled to a printed circuit board. The tunable laser includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. An optical output interface is positioned at the second end of the housing and configured to transmit a continuous wave optical beam. A beam splitter and photodiode is disposed in the path of the laser beam for determining the emitted intensity of the laser beam, and an optical isolator is positioned downstream of the beam splitter to prevent the incoming light from the beam splitter from reflecting back though the beam splitter and into the cavity of the laser.

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11-07-2013 дата публикации

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

Номер: US20130177036A1

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

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11-07-2013 дата публикации

SURFACE EMITTING LASER, SURFACE-EMITTING-LASER ARRAY, AND IMAGE FORMING APPARATUS

Номер: US20130177336A1
Автор: Ikuta Mitsuhiro
Принадлежит: CANON KABUSHIKI KAISHA

The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. 4. The surface emitting laser according to claim 1 , wherein the absolute value of the difference L is (½+N)λ.5. The surface emitting laser according to claim 1 , wherein the integer N is 0.6. The surface emitting laser according to claim 1 , wherein the first stepped structure has an optical thickness that is an integral multiple of λ/2 in each of the first area and the second area.7. The surface emitting laser according to claim 6 , wherein the first stepped structure is made of SiO.9. The surface emitting laser according to claim 1 , wherein the first stepped structure includes a semiconductor and a dielectric.10. The surface emitting laser according to claim 1 , further comprising:a second stepped structure provided on a front or rear surface of the first stepped structure and including a portion extending in a fourth area defined in a central part of the emission area and a portion extending in a fifth area defined on the outer side of the fourth area within the emission area, the portions having different heights,wherein at least a part around a boundary between the first area and the second area belongs to the fifth area.11. The surface emitting laser according to claim 10 , wherein a structure including the front mirror claim 10 , the first stepped structure claim 10 , and the second stepped structure has a higher reflectance in the fourth area than in the fifth area.12. The surface emitting laser according to claim 10 , wherein a difference between an optical path length of the portion of the second stepped structure extending in the fourth area and an optical path length of the portion of the second stepped structure extending in the fifth area is an odd multiple of λ/4.13. ...

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18-07-2013 дата публикации

Slot waveguide structure for wavelength tunable laser

Номер: US20130182730A1
Автор: Ruolln Li, Wenjun Fan
Принадлежит: Mars Technology Co Ltd

Exemplary embodiments provide a wavelength tunable laser device and methods using the wavelength tunable laser device for a laser tuning. An exemplary wavelength tunable laser device can include an active gain element, a slot waveguide structure, and a wavelength tuning structure including heating elements disposed around the grating structure for a wavelength selection.

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25-07-2013 дата публикации

Hybrid laser light sources for photonic integrated circuits

Номер: US20130188904A1
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

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01-08-2013 дата публикации

SURFACE EMITTING LASER

Номер: US20130195135A1
Принадлежит: CANON KABUSHIKI KAISHA

A surface emitting laser having a mesa structure includes an off-orientation substrate, a bottom reflection mirror, an active layer, a current confinement layer, a top reflection mirror, and a surface-relief structure. The central axis of a high-reflectivity region of the surface-relief structure and the central axis of the mesa structure do not coincide with each other. 1. A surface emitting laser having a mesa structure , the surface emitting laser comprising:an off-orientation substrate;a bottom reflection mirror formed on the off-orientation substrate;an active layer formed on the bottom reflection mirror;a current confinement layer formed on the active layer, the current confinement layer including an oxidized region and a non-oxidized region;a top reflection mirror formed on the current confinement layer; anda surface-relief structure formed on a light-emitting region of the top reflection mirror, the surface-relief structure has a stepped structure including a low-reflectivity region and a high-reflectivity region,wherein a central axis of the high-reflectivity region of the surface-relief structure and a central axis of the mesa structure do not coincide with each other.2. The surface emitting laser according to claim 1 , wherein a center of the high-reflectivity region of the surface-relief structure is located corresponding to a direction in which the off-orientation substrate is inclined.3. The surface emitting laser according to claim 1 , whereina center of the high-reflectivity region of the surface-relief structure lies within a fan-shaped region having a central angle of 90 degrees or less and a radius r,an arc of the fan-shaped region intersects an axis that passes through a center of the mesa structure, the axis being perpendicular to a plane oriented in a direction in which the off-orientation substrate is inclined, andthe radius r is 15% or less of a distance between the center of the mesa structure and a periphery of the non-oxidized region.4. ...

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15-08-2013 дата публикации

Laser architectures

Номер: US20130208741A1
Принадлежит: RealD Inc

Disclosed herein are architectures for VCSEL systems. By using high power IR VCSEL element(s), a bulk doubling material can be used to double the IR light and generate visible light (red, green, blue, or UV light) in a cavity, in either continuous wave (CW) or pulsed mode. The reflectivity of the output distributed Bragg reflector (DBR) of these VCSELs can be designed to increase the power in the cavity, rather than the power in the VCSEL laser. By enabling the use of a bulk doubling material in the cavity and directly doubling the VCSEL the device can be inexpensive, simpler, high efficiency, better reliability, and vastly improved manufacturing and alignment tolerances. There are a number of cavity architectures that can be used to double the IR light from the VCSEL(s). The VCSEL(s) can be single elements, or arrays with high intensity elements.

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15-08-2013 дата публикации

BROADBAND QUANTUM CASCADE LASER SOURCE

Номер: US20130208743A1

A broadband quantum cascade laser (QCL) source includes one or more QCLs having an active region designed based on a diagonal laser transition. The QCL source may include multiple QCLs formed in an array or the QCL source may comprise a single QCL device. Although each QCL provides an emission spectrum comprising a small range of wavelengths at a given applied voltage, changes in the applied operating voltage result in changes in the emission spectrum of the QCL due to the Stark shift. When the QCL source comprises a plurality of QCLs formed in an array, at least some of the elements in the array may receive different applied operating voltages such that the combined output spectrum of the array is broader than that achievable by a single QCL. When the QCL source comprises a single QCL device, an applied operating voltage may be swept through a range of applied voltages such that that combined output spectrum over one sweep cycle is broader than the output spectrum of the QCL device when a static operating voltage is applied. Alternatively, the single QCL device may comprise multiple independent gain sections, wherein each of the independent gain sections is configured to operate at a different voltages to provide a broadband output spectrum. 1. A broadband quantum cascade laser (QCL) source , comprising:an array of QCLs, wherein at least two of the QCLs in the array are configured to operate at different applied voltages.2. The broadband QCL source of claim 1 , wherein the at least two of the QCLs are configured to emit within different spectral ranges in response to the different applied voltages.3. The broadband QCL source of claim 1 , wherein at least two of the QCLs in the QCL array are configured to be operated simultaneously.4. The broadband QCL source of claim 1 , wherein at least two of the QCLs in the QCL array are configured to be operated sequentially.5. The broadband QCL source of claim 1 , wherein at least two of the QCLs in the QCL array are ...

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15-08-2013 дата публикации

SEMICONDUCTOR LASER DIODE HAVING WAVEGUIDE LENS

Номер: US20130208750A1

Provided is a semiconductor laser diode having a waveguide lens. The semiconductor laser diode includes at least one first waveguide having a narrow width, at least one second waveguide having a wide width wider, and at least one waveguide lens having an increasing width from the first waveguide toward the second waveguide and connecting the first waveguide to the second waveguide. Sidewalls of the waveguide lens connecting the first waveguide to the second waveguide may be curved. The second waveguide may be a waveguide providing an optical gain. 118-. (canceled)19. A semiconductor laser diode comprising:at least two first waveguides, each configured to provide a beam having a single mode to a second waveguide, the first waveguides being spaced apart from each other and having a first width;at least one second waveguide having a second width wider than the first width; anda first waveguide lens provided between one of the first waveguides and the second waveguide and coupling the one of the first waveguides to the second waveguide; anda second waveguide lens provided between the other of the first waveguides and the second waveguide and coupling the other of the first waveguides to the second waveguide,wherein each of the first waveguide lens and the second waveguide lens has an increasing width from the first waveguide toward the second waveguide, andwherein at least one sidewall of each of the first waveguide lenses and the second waveguide lens coupling the first waveguides to the second waveguide, respectively, is curved.20. The semiconductor laser diode of claim 19 , wherein the at least one sidewall of each of the first and second waveguide lenses comprises a continuously increasing radius of curvature from the first waveguide toward the second waveguide.21. The semiconductor laser diode of claim 19 , wherein each of the first and second waveguide lenses comprises a sidewall shape forming a beam incident from each of the first waveguides to the second ...

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15-08-2013 дата публикации

SMALL-MODE-VOLUME, VERTICAL-CAVITY, SURFACE-EMITTING LASER

Номер: US20130209110A1
Принадлежит:

A small-mode-volume, vertical-cavity, surface-emitting laser (VCSEL). The VCSEL includes an active structure to emit light upon injection of carriers, and two reflecting structures at least one of which is a grating reflector structure. The active structure is disposed within at least one of the reflecting structures. The reflecting structures are configured as a vertical-cavity resonator of small mode-volume. An optical-bus transmitter including a plurality of small-mode-volume VCSELs, and a system including at least one optical bus and at least one optical-bus transmitter in a digital-information processor, or a data-processing center, are also provided. 1. A small-mode-volume , vertical-cavity , surface-emitting laser , said laser comprising:two reflecting structures at least one of which is a grating reflector structure; andan active structure to emit light upon injection of carriers, said active structure disposed within at least one of said reflecting structures;wherein said reflecting structures are configured as a vertical-cavity resonator of small mode-volume.2. The small-mode-volume claim 1 , vertical-cavity claim 1 , surface-emitting laser of claim 1 , further comprising:a distributed Bragg reflector, said distributed Bragg reflector being another of said two reflecting structures and disposed below said grating reflector structure;a first electrode coupled to a bottom portion of said distributed Bragg reflector; anda second electrode coupled to a top portion of said distributed Bragg reflector;wherein said active structure is disposed in a substantially intrinsic portion within said distributed Bragg reflector between said top portion and said bottom portion;wherein a p-doped portion, said substantially intrinsic portion, and an n-doped portion are configured as a vertical p-i-n diode to provide carrier injection into said active structure andwherein said p-doped portion and said n-doped portion are selected from the group consisting of said top portion ...

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22-08-2013 дата публикации

Method for the reuse of gallium nitride epitaxial substrates

Номер: US20130214284A1
Принадлежит: UNIVERSITY OF CALIFORNIA

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

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22-08-2013 дата публикации

ELECTRONIC DEVICE, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, LIGHT SOURCE, OPTICAL MODULE

Номер: US20130215922A1
Принадлежит: FURUKAWA ELECTRIC CO., LTD.

An electronic device comprising a multilayer semiconductor structure formed by a periodic structure having a first semiconductor layer and a second semiconductor layer, wherein in at least a portion of the multilayer semiconductor structure, the first semiconductor layer and the second semiconductor layer have different conduction types. The first semiconductor layer and the second semiconductor layer have different refractive indexes, and the multilayer semiconductor structure functions as a multilayer reflective mirror. As a result, an electronic device, a surface emitting laser, a surface emitting laser array, a light source, and an optical module with decreased parasitic capacitance can be realized. 1. An electronic device comprising a multilayer semiconductor structure formed by a periodic structure having a first semiconductor layer and a second semiconductor layer , whereinin at least a portion of the multilayer semiconductor structure, the first semiconductor layer and the second semiconductor layer have different conduction types,the first semiconductor layer and the second semiconductor layer have different refractive indexes, andthe multilayer semiconductor structure functions as a multilayer reflective mirror.2. A surface emitting laser comprising:a lower multilayer reflective semiconductor mirror formed by a periodic structure having a first low refractive index layer and first high refractive index layer, which has a higher refractive index than the first low refractive index layer;an upper multilayer reflective minor formed by a periodic structure having a second low refractive index layer and second high refractive index layer, which has a higher refractive index than the second low refractive index layer;an active layer provided between the lower multilayer reflective semiconductor mirror and the upper multilayer reflective minor; anda lower contact layer that is provided between the active layer and the lower multilayer reflective semiconductor ...

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29-08-2013 дата публикации

Microbubble optical resonator

Номер: US20130219970A1
Автор: Mikhail Sumetsky
Принадлежит: OFS FITEL LLC

An optical microresonator is configured as an optical microbubble formed along a section of an optical microcapillary. The curvature of the outer surface of the microbubble creates an optical resonator with a geometry that encourages the circulating WGMs to remain confined in the central region of the bubble, creating a high Q optical resonator. The resonator may be tuned by modifying the physical properties of the microbubble, allowing the resonator to be used as an optical filter. The resonator may also be used as a sensor or laser by introducing the material to be sensed (or the active laser material) into the microcapillary along which the microbubble is formed.

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29-08-2013 дата публикации

OPTICAL ELEMENT FOR VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING LASER

Номер: US20130223466A1
Принадлежит: KONINKLIJKE PHILIPS ELECTRONICS N.V.

The present invention relates to an optical element for VEC-SELs or VECSEL arrays. The optical element is formed of a substrate () which is transparent at least in a wavelength region of optical radiation. A first interface of the- substrate () comprises one or several curved regions forming part of an optical lens or of an array of optical lenses () integrated in the substrate (). The substrate () further comprises one or several optical mirrors () formed on a second interface of the substrate () opposing the first interface or embedded in the substrate (). The optical mirrors () are arranged and designed to back reflect a fraction of optical radiation incident on the first or second interface. The optical mirrors () are flat mirrors or curved mirrors having a radius of curvature different from the radius of curvature of the curved region (). The optical element allows the fabrication of a VECSEL or VECSEL array having a high brightness without the requirement of additional adjustments during fabrication. The VECSEL are arranged at a distance (L) to the optical mirrors () and this equals the length of the external cavity. The ROC of the optical lens may be chosen to ROC=L/2 and for the optical mirror ROC>L. The cavity length may be adjusted by a monolithic spacer () 1. An optical element formed of a substrate , which is transparent at least in a wavelength region of optical radiation ,a first interface of said substrate comprising several curved regions forming part of an optical lens or of an array of optical lenses integrated in said substrate,said substrate further comprising several optical mirrors formed on a second interface of said substrate opposing said first interface or embedded in said substrate,said several optical mirrors being arranged and designed to back reflect a fraction of optical radiation in said wavelength region incident on said first or second interface,wherein said one or several optical mirrors are flat mirrors or curved mirrors having a ...

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29-08-2013 дата публикации

EXTERNAL CAVITY LASER ARRAY SYSTEM AND WDM OPTICAL SYSTEM INCLUDING SAME

Номер: US20130223844A1
Автор: Hwang Wen-Yen
Принадлежит: APPLIED OPTOELECTRONICS, INC.

An external cavity laser array system may be used in a WDM optical system, such as a WDM-PON, for transmitting optical signals at multiple channel wavelengths. The system generally includes a plurality of laser emitters (e.g., gain chips) optically coupled to and separated from respective exit reflectors (e.g., tunable narrow-band reflectors), thereby forming an array of external cavity lasers with extended lasing cavities. The exit reflectors may be distributed Bragg reflectors (DBRs) located in the waveguides in an arrayed waveguide grating (AWG). The laser emitters emit a range of wavelengths including multiple channel wavelengths and the DBRs reflect a subset of channel wavelengths including at least a channel wavelength associated with the laser emitter such that lasing occurs at the subset of channel wavelengths. The AWG then filters the emitted laser light at the associated channel wavelengths. 1. An external cavity laser array system comprising:a plurality of laser emitters, each of the laser emitters including a gain region for emitting light across a range of wavelengths and a back reflector located at one end thereof; andan arrayed waveguide grating (AWG) including a plurality of input ports optically coupled to the laser emitters, respectively, an output port, and a plurality of optical waveguides extending from the input ports, respectively, to the output port, wherein the optical waveguides include distributed Bragg reflector (DBR) gratings, respectively, such that extended lasing cavities are formed between the back reflectors of the laser emitters and the DBR gratings, respectively.2. The external cavity laser array system of wherein the laser emitters include reflective-semiconductor-optical-amplifiers (R-SOAs).3. The external cavity laser array system of further comprising an optical assembly for optically coupling the emitted light into the respective waveguides of the AWG.4. The external cavity laser array system of wherein each of the DBR ...

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05-09-2013 дата публикации

SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE

Номер: US20130230070A1
Принадлежит: RICOH COMPANY, LTD.

A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. 120-. (canceled)21. A surface-emitting laser array comprising:a substrate;an element-arrangement portion provided on the substrate and including a plurality of surface-emitting laser elements arranged therein; anda flat part provided on the substrate and arranged in a circumference of the element-arrangement portion in an in-surface direction of the substrate, wherein:each of the plurality of surface-emitting laser elements includes a mesa structure that emits a laser beam;each of the flat part and the element-arrangement portion includes an absorption layer that is arranged to absorb a difference of an etching depth in the in-surface direction at a time of forming the mesa structures of the plurality of surface-emitting laser elements; anda bottom of the mesa structure of each surface-emitting laser element is located in the absorption layer in a direction perpendicular to the substrate.22. The surface-emitting laser array according to claim 21 ,wherein each of the plurality of surface-emitting laser elements comprises:a first reflection layer formed on the substrate to constitute a semiconductor Bragg ...

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05-09-2013 дата публикации

Human placental collagen compositions, and methods of making and using the same

Номер: US20130231288A1
Принадлежит: Anthrogenesis Corp

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal.

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12-09-2013 дата публикации

Light emitting device

Номер: US20130234189A1
Автор: Masamitsu Mochizuki
Принадлежит: Seiko Epson Corp

A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

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19-09-2013 дата публикации

SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS

Номер: US20130243022A1
Принадлежит: RICOH COMPANY, LTD.

A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions. 129-. (canceled)30. A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate , the surface-emitting laser device comprising:an electrode surrounding an emitting area on an emitting surface to emit the laser light; anda bump structure formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part, the bump structure having an optical thickness of (λ/4)·n (n is an odd number, λ is an oscillation wavelength),wherein the outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.31. The surface-emitting laser device as claimed in claim 30 ,wherein the bump structure is formed on a plurality of small areas provided in the outside area.32. The surface-emitting laser device as claimed in claim 30 ,wherein the bump structure is formed on an annular area provided in the outside area, and the annular area has different diameters in two mutually perpendicular directions.33. The surface-emitting laser device as claimed in claim 31 ,wherein the plural small areas include a first small area and a second small area, and the first small area and the second small area face each other across the center part of the emitting area.34. The surface-emitting laser device as claimed in claim 33 ,wherein the laser light is linearly polarized light, andthe first small area and the second small area face ...

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19-09-2013 дата публикации

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

Номер: US20130243023A1
Автор: Takashi Kondo
Принадлежит: Fuji Xerox Co Ltd

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

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19-09-2013 дата публикации

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER

Номер: US20130243026A1
Принадлежит:

Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged. 1. A two-dimensional photonic crystal surface emitting laser having a laminated structure including:a) an active layer for generating light within a predetermined wavelength range by receiving an injection of an electric current; and b-1) a light-resonating photonic crystal structure with modified refractive index areas located at lattice points of a light-resonating lattice whose periodicity is determined so that a resonant state of light of emission wavelength λ which is a wavelength within the aforementioned wavelength range is created by forming a two-dimensional standing wave while the light of emission wavelength λ is prevented from being emitted to an outside; and', {'sub': 'eff', 'b-2) a light-emitting photonic crystal structure with modified refractive index areas located at lattice points of a lattice having a reciprocal lattice vector G′↑ in a reciprocal space, where a magnitude of a sum of the reciprocal lattice vector G′↑ and a wave vector k↑ corresponding to the emission wavelength λ, within the light-resonating photonic crystal structure is smaller than (|k↑|/n).'}], 'b) a two-dimensional photonic crystal layer made of a two-dimensional photonic crystal having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged, wherein the two-dimensional photonic crystal layer includes6. The two-dimensional photonic crystal surface emitting laser according to claim 1 , wherein the two-dimensional photonic crystal layer has a single-layer structure in ...

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26-09-2013 дата публикации

Laser emitting chip package

Номер: US20130250990A1
Автор: Kai-Wen Wu
Принадлежит: Individual

A laser emitting chip package includes a circuit board, a laser emitting chip, and at least three gold balls. The circuit board includes at least two substrate-pad areas. The laser emitting chip includes at least two chip-pad areas. Each of the chip-pad areas spatially corresponds to a respective one of the substrate-pad areas. The at least three gold balls are explanted on the at least two chip-pad areas. The laser emitting chip is supported on the circuit board by the at least three gold balls in a triangular or square arrangement between the chip-pad areas and the substrate-pad areas. The laser emitting chip is electrically connected to the circuit board through the gold balls.

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26-09-2013 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE

Номер: US20130250993A1
Принадлежит: FURUKAWA ELECTRIC CO., LTD.

Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlGaAs (0.8≦x≦1) and a high-refractive-index layer formed of AlGaAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer. 1. (canceled)3. The surface emitting laser element according to claim 2 , wherein the low-refractive-index layer of the lower multilayer film reflecting mirror includes AlGaAs claim 2 , where 0.855 Подробнее

26-09-2013 дата публикации

SURFACE EMITTING LASER ARRAY ELEMENT, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS

Номер: US20130251408A1
Принадлежит: RICOH COMPANY, LTD.

A surface emitting laser array element is disclosed that includes a lower distributed bragg reflector (DBR) that is formed on a substrate, an active layer that is formed on the lower DBR, and an upper DBR that is formed on the active layer. A mesa and a dummy mesa that is arranged at a periphery of the mesa are created by removing a portion of the upper DBR. The mesa forms a surface emitting laser, and a wiring is connected to an electrode that is formed on an upper face of the mesa. The wiring includes a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring. 1. A surface emitting laser array element comprising:a lower distributed bragg reflector that is formed on a substrate;an active layer that is formed on the lower distributed bragg reflector;an upper distributed bragg reflector that is formed on the active layer;a mesa and a dummy mesa that are created by removing a portion of the upper distributed bragg reflector, the mesa forming a surface emitting laser and the dummy mesa being arranged at a periphery of the mesa; anda wiring that is connected to an electrode that is formed on an upper face of the mesa, the wiring including a portion that is arranged over an upper face of the dummy mesa, a side face of the dummy mesa, and a bottom face at a peripheral region of the dummy mesa extending along a longitudinal direction of the wiring.2. The surface emitting laser array element as claimed in claim 1 , wherein two strips of the wiring are arranged between the dummy mesas.3. The surface emitting laser array element as claimed in claim 1 , whereinthe portion of the wiring that is arranged over the peripheral region of the dummy mesa is arranged to extend in an outward direction from the dummy mesa to be wider than a remaining portion of the wiring.4. The surface emitting laser array element as claimed in claim 1 , ...

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03-10-2013 дата публикации

Semiconductor laser

Номер: US20130259078A1
Автор: Kazuya OHIRA, Nobuo Suzuki
Принадлежит: Individual

A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

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10-10-2013 дата публикации

Microlenses for Multibeam Arrays of Optoelectronic Devices for High Frequency Operation

Номер: US20130266326A1
Принадлежит: TRILUMINA CORPORATION

A VCSEL array device formed of a monolithic array of raised VCSELs on an electrical contact and raised inactive regions connected to the electrical contact. The VCSELs can be spaced symmetrically or asymmetrically, in a manner to improve power or speed, or in phase and in parallel. The raised VCSELs and raised inactive regions are positioned between the electrical contact and an electrical waveguide. The VCSELs may be separated into subarrays and each VCSEL may be covered with an integrated or bonded microlens for directing light without external lenses. The microlenses may be offset to collect or collimate light and may be shaped to form various lens profiles. 1. An optical device , comprising:a laser array including a plurality of vertical cavity surface emitting laser (VCSEL) devices arranged in a pattern on a substrate of the laser array; anda plurality of microlenses formed within the substrate, each microlens among the plurality of microlens being located over a corresponding VCSEL device, each microlens directing a beam of light emitted by the corresponding VCSEL device to a target or for scanning without requiring optical elements external to the laser array to collimate or concentrate the light for illumination of the target.2. The optical device of claim 1 , wherein the optical device is a transmitter for a free space optical data link.3. The optical device of claim 1 , wherein each microlens is offset a distance from an axis of the corresponding VCSEL device necessary to cause the beam of light to converge or diverge on the target or for scanning.4. The optical device of claim 1 , wherein the distance is based on a desired angular deviation of the beam of light.5. The optical device of claim 1 , further comprising a driver circuit for powering the laser array claim 1 , wherein the pattern includes two or more subarrays of VCSEL devices claim 1 , wherein each subarray among the two or more subarrays is independently powered and modulated for operation by ...

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17-10-2013 дата публикации

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

Номер: US20130270518A1
Принадлежит: Forschungsverbund Berlin FVB eV

The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength. In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

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17-10-2013 дата публикации

VERTICAL-CAVITY SURFACE-EMITTING LASER SYSTEM AND METHOD FOR FABRICATING THE SAME

Номер: US20130272337A1
Принадлежит:

A vertical cavity surface emitting laser (VCSEL) system and method of fabrication are included. The VCSEL system includes a first portion comprising a first mirror and a gain region to amplify an optical signal in response to a data signal, the first portion being fabricated on a first wafer. The system also includes a second portion comprising a second mirror that is partially-reflective to couple the optical signal to an optical fiber. The second portion can be fabricated on a second wafer. The system further includes a supporting structure to couple the first and second portions such that the first and second mirrors are arranged as a laser cavity having a predetermined length to resonate the optical signal. 1. A vertical cavity surface emitting laser (VCSEL) system comprising:a first portion comprising a first mirror and a gain region to amplify an optical signal in response to a data signal, the first portion being fabricated on a first wafer;a second portion comprising a second mirror that is partially-reflective to couple the optical signal to an optical fiber, the second portion being fabricated on a second wafer; anda supporting structure to couple the first and second portions, such that the first and second mirrors are arranged as a laser cavity having a predetermined length to resonate the optical signal.2. The system of claim 1 , wherein the second wafer is a silicon-on-insulator (SOI) wafer comprising a first silicon layer claim 1 , an insulator layer over the first silicon layer claim 1 , and a second silicon layer over the insulator layer.3. The system of claim 2 , wherein the second mirror comprises a high-contrast grating (HCG) mirror that is patterned on the first silicon layer.4. The system of claim 3 , wherein the first portion comprises an aperture through which the optical signal resonates between the first and second mirrors claim 3 , the HCG mirror focusing the optical signal through the aperture.5. The system of claim 3 , wherein a lasing ...

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17-10-2013 дата публикации

SURFACE EMITTING LASER DEVICE, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, IMAGE FORMING APPARATUS, AND MANUFACTURING METHOD OF SURFACE EMITTING LASER DEVICE

Номер: US20130273677A1
Принадлежит: RICOH COMPANY, LTD.

A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film. 110-. (canceled)11. A method of manufacturing a surface emitting device including a mesa structure which becomes a light emitting section in a laminated body where a lower reflection mirror , an oscillation structure , and an upper reflection mirror are laminated on a substrate , the oscillation structure including an active layer , the upper reflection mirror including a current confined structure , and an emitting region including a part where the refractive index is relatively high and a part where the refractive index is relatively low , the method comprising:forming a first dielectric film on an upper surface of the laminated body before the mesa structure is formed;forming a first resist pattern on an upper surface of the first dielectric film, the first resist pattern including a pattern defining an outer shape of the mesa structure and a pattern protecting a region corresponding to the part where the refractive index is relatively high in the emitting region;etching the first dielectric layer using the first resist pattern as an etching mask;forming a second resist ...

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24-10-2013 дата публикации

Addressable illuminator with eye-safety circuitry

Номер: US20130278151A1
Автор: Kevin L. Lear
Принадлежит: TRILUMINA CORPORATION

An addressable illuminator is disclosed consisting of multiple optical sources used in combination with an electrical circuit so that different combinations of the optical sources can be energized without exceeding eye-safety limits. Operation of multiple optical sources may be proximate, which is eye-safe, regardless of the number of or which ones of the optical sources are energized and regardless of the position of observers. An illuminator with multiple optical sources remains eye-safe when there are single-point electrical failures, such as short circuits, in the driving circuit. Monitoring or a feedback loop for the output power is not required or necessary to control the distance of an observer in order to be eye-safe.

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24-10-2013 дата публикации

SEMICONDUCTOR DEVICE HAVING A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) AND A PROTECTION DIODE INTEGRATED THEREIN AND HAVING REDUCED CAPACITANCE TO ALLOW THE VCSEL TO ACHIEVE HIGH OPERATING SPEEDS

Номер: US20130279531A1
Автор: Murty Ramana
Принадлежит:

A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds. 1. A semiconductor device comprising:a substrate having at least one n-type layer of semiconductor material formed on an upper surface thereof;a first plurality of layers comprising a semiconductor material disposed on top of said at least one n-type layer, wherein a first, lower distributed Bragg reflector (DBR) is formed in the first plurality of layers, and wherein at least one of the first plurality of layers is of an n-type;a first intrinsic layer containing a light-emitting material disposed on top of the first plurality of layers;a second plurality of layers comprising a semiconductor material disposed on top of the first intrinsic layer, wherein a second, upper DBR is formed in the second plurality of layers, and wherein at least one of the second plurality of layers is of a p-type, and wherein portions of the first plurality of layers, the first intrinsic layer, and the second plurality of layers constitute a vertical cavity surface emitting laser (VCSEL);a second intrinsic layer disposed on top of the second plurality of layers; andat least one layer of n-type semiconductor material disposed on top of the second intrinsic layer, and wherein portions of the second plurality of layers, the second intrinsic layer, and said at least one layer of n-type semiconductor material constitute a protection diode for protecting the VCSEL from electrostatic discharge (ESD) events.2. The semiconductor device of claim 1 , wherein said portion of the second intrinsic layer has a depletion region that has a width that ...

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31-10-2013 дата публикации

Method and Apparatus for the Line Narrowing of Diode Lasers

Номер: US20130284710A1
Автор: Donald Ronning, Paul Hoff
Принадлежит: Translith Systems LLC

A system for narrowing the spectral output of diode lasers through the use of dielectric stacks in the laser cavity comprising an alternating sequence of layers of dielectric material and air, which dielectric stacks are fabricated through the controlled laser ablation of the dielectric material.

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31-10-2013 дата публикации

DISTRIBUTED FEEDBACK LASER HAVING ENHANCED ETCH STOP FEATURES

Номер: US20130287405A1
Принадлежит:

In one example embodiment, a DFB laser includes a substrate; an active region positioned above the substrate; a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer; a secondary etch stop layer positioned above the grating layer; and a spacer layer interposed between the grating layer and the secondary etch stop layer. 1. A distributed feedback (DFB) laser , comprising:a substrate;an active region positioned above the substrate;a grating layer positioned above the active region, the grating layer including a portion that serves as a primary etch stop layer;a secondary etch stop layer positioned above the grating layer; anda spacer layer interposed between the grating layer and the secondary etch stop layer.2. The DFB laser as recited in claim 1 , wherein:the secondary etch stop layer comprises indium gallium arsenide phosphide:the spacer layer comprises indium phosphide; andthe grating layer comprises indium gallium arsenide phosphide.3. The DFB laser as recited in claim 1 , wherein a thickness of the spacer layer is at least partly based upon the presence of the secondary etch stop layer.4. A TOSA comprising:a housing; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the DFB laser as recited in positioned within the housing.'}5. An optical transceiver module comprising:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, 'the TOSA as recited in ;'}a ROSA; anda PCB in electrical communication with the TOSA and the ROSA. This application is a divisional of U.S. patent application Ser. No. 12/902,000, filed on Oct. 11, 2010, which is a divisional of U.S. patent application Ser. No. 12/138,361, filed on Jun. 12, 2008, which claims priority from U.S. Provisional Patent Application Ser. No. 60/943,782, filed Jun. 13, 2007, and entitled “DISTRIBUTED FEEDBACK LASER HAVING ENHANCED ETCH STOP FEATURES,” the contents of each of which are incorporated herein by reference in their entirety. ...

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21-11-2013 дата публикации

Semiconductor Light Source Free From Facet Reflections

Номер: US20130308333A1
Автор: Gerard A. Alphonse
Принадлежит: Gerard A. Alphonse

A new class of optical source having a truncated waveguide is provided, where a guided section of a light generating medium is terminated at an angle at a predetermined distance away from one end facet of the waveguide, thereby leaving a section for unguided light propagation. A truncated waveguide when implemented in combination with waveguide tilt, effective front facet reflectivity is reduced significantly to eliminate unwanted facet reflections. By extending electrical pumping in the unguided propagation section, the light in the unguided path propagates to a corresponding end facet without attenuation. The reflected light propagates freely without being intercepted by the waveguide. The principles are incorporated in different types of light generating and amplifying medium including a “double-pass” gain medium for designing optical sources having significantly high output power and negligibly small spectral modulation arising from unwanted facet reflections.

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21-11-2013 дата публикации

Fiber laser

Номер: US20130308661A1
Принадлежит: Panasonic Corp

The optical fiber of the present invention has an input double-clad fiber containing high-reflection FBG, an oscillation double-clad fiber, and an output double-clad fiber containing low-reflection FBG. The output double-clad fiber is formed of a core, a first clad, and a second clad. In the output double-clad fiber, a high refractive-index resin coat section recoated with high refractive-index resin whose refractive index is the same as that of the second clad or greater is disposed at a part where the second clad is partly removed between an output end and the low-reflection FBG. The refractive index of the high refractive-index resin coat section gradually increases along the direction in which light travels through the first clad.

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21-11-2013 дата публикации

Method and Apparatus for Reducing the Amplitude Modulation of Optical Signals in External Cavity Lasers

Номер: US20130308664A1
Принадлежит: GOOGLE INC.

A laser apparatus includes an external cavity laser (ECL) where the optical signal is modulated by an electrical modulation signal for modulating in frequency the laser output signal. The modulation in frequency produces a modulation of intensity (power) of the laser output signal, also denoted amplitude modulation (AM). A method of controlling the AM amplitude of a signal emitted by an ECL includes a gain medium, a phase element with variable transmissivity induced by the modulation, and a spectrally selective optical filter that selects and keeps the AM amplitude below a certain desired value or minimizes such value. A control method and a laser apparatus are also described in which the reduction of the AM component of the output power is achieved by acting on the gain of the gain medium of the ECL. 1. A method of operating a laser that emits an output optical signal at a central laser frequency and that comprises an external cavity including a semiconductor gain medium and a phase element whose phase is controllable through a control parameter , the method comprising:applying a first electrical modulation signal to the control parameter so as to create a modulation of a length of a cavity optical path at a modulation frequency and with a first modulation depth that causes an optical frequency excursion and an amplitude modulation of the output optical signal;simultaneously applying a second electrical modulation signal to the gain medium at the modulation frequency and at a second modulation depth;detecting a modulation amplitude of the output optical signal; andadjusting the second modulation depth based on an analysis of the modulation amplitude of the laser output signal.2. The method of claim 1 , wherein the first phase element has an optical transmissivity that substantially decreases with an increase in the control parameter at least within its variation induced by the first modulation signal and wherein the first modulation signal is substantially in phase ...

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21-11-2013 дата публикации

SEMICONDUCTOR LASER

Номер: US20130308666A1
Принадлежит: Sumitomo Electric Industries, Ltd.

A semiconductor laser includes: a first reflector that is provided in a gain region and has a sampled grating in which a plurality of segments are combined; and a second reflector that is optically connected to the first reflector and has a sampled grating in which a plurality of segments are combined, the plurality of segments of the first reflector having a short-segment region and a long-segment region, the long-segment region having an optical length that is larger than that of the short-segment region and being positioned closer to the second reflector than at least one of the short-segment region, the optical length of the long-segment region being larger than that of the short-segment region in a range of integral multiple (n≧1) plus-minus 25% of the optical length of the short-segment. 1. A semiconductor laser comprising:a first reflector that is provided in a gain region and has a sampled grating in which a plurality of segments are combined, the segment having a diffraction grating region and a space region next to the diffraction grating, both sides of the space region being sandwiched by a diffraction grating; anda second reflector that is optically connected to the first reflector and has a sampled grating in which a plurality of segments are combined, the segment having a diffraction grating region and a space region next to the diffraction grating, both sides of the space region being sandwiched by a diffraction grating,the plurality of segments of the first reflector having a short-segment region and a long-segment region,the long-segment region having an optical length that is larger than that of the short-segment region and being positioned closer to the second reflector than at least one of the short-segment region,the optical length of the long-segment region being larger than that of the short-segment region in a range of integral multiple (n≧1) plus-minus 25% of the optical length of the short-segment.2. The semiconductor laser as claimed in ...

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21-11-2013 дата публикации

Group-iii nitride semiconductor laser device

Номер: US20130308670A1
Принадлежит: Sony Corp, Sumitomo Electric Industries Ltd

A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

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21-11-2013 дата публикации

Directly Modulated Laser for PON Applications

Номер: US20130308959A1
Автор: Yasuhiro Matsui
Принадлежит: Finisar Corp

In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

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28-11-2013 дата публикации

Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing

Номер: US20130315269A1
Автор: Cedric F. Lam, HONG Liu
Принадлежит: Google LLC

Techniques, devices and systems for optical communications based on wavelength division multiplexing (WDM) that use tunable multi-wavelength laser transmitter modules.

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05-12-2013 дата публикации

CONTROLLED-IMPEDANCE OUT-OF-SUBSTRATE PACKAGE STRUCTURES EMPLOYING ELECTRICAL DEVICES, AND RELATED ASSEMBLIES, COMPONENTS, AND METHODS

Номер: US20130322476A1
Принадлежит:

Controlled-impedance out-of-substrate package structures employing electrical devices and related assemblies, components, and methods are disclosed. An out-of-substrate package structure may be used to electrically couple an electrical device to an electrical substrate, for example a printed circuit board. The out-of-substrate package structure may be electrically coupled to the electrical substrate. Ground paths of the out-of-substrate package structure may be arranged proximate to the electrical device and arranged symmetric with respect to at least one geometric plane intersecting the electrical device. In this regard, electric field lines generated by current flowing into the electrical device tend to terminate at the return or ground paths allowing for impedance to be more easily controlled. Accordingly, the out-of-substrate package structure may be impedance matched in a better way with respect to power provided from the electrical substrate enabling faster electrical device speeds. 1. A controlled-impedance out-of-substrate package structure mountable on an electrical substrate , comprising:a signal path configured to be electrically coupled to a signal pad of an electrical substrate;ground paths configured to be electrically coupled to at least one ground plane of the electrical substrate; andan electrical device configured to be electrically coupled to the signal path and to at least one of the ground paths,wherein the ground paths are arranged proximate to the electrical device and arranged symmetric with respect to at least one geometric plane intersecting the electrical device to control impedance.2. The out-of-plane package structure of claim 1 , wherein the electrical device is disposed between the ground paths.3. The out-of-plane package structure of claim 1 , wherein the signal path comprises a first wire bond and the ground paths include a second wire bond claim 1 , and the first wire bond and the second wire bond electrically couple the signal path ...

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05-12-2013 дата публикации

Semiconductor Laser Device

Номер: US20130322478A1
Принадлежит: HITACHI LTD

Beams of light having wavelengths different from each other are generated in a plurality of light generation portions, the beams of light each generated in the plurality of light generation portions are reflected by a monolithic integrated mirror and are incident to a condenser lens, and emission positions on the condenser lens of the beams of light each generated in the plurality of light generation portions deviate from a central position of the condenser lens by a predetermined amount.

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