ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР НА ОСНОВЕ ЭПИТАКСИАЛЬНОЙ ГЕТЕРОСТРУКТУРЫ

... 1. Полупроводниковый лазер на основе эпитаксиальной гетероструктуры, включающий лазерный кристалл, теплоотвод со стороны эпитаксиальных слоев гетероструктуры, подводящие ток электроды, расположенные параллельно оси резонатора лазерного кристалла и гибкие электрические проводники, присоединенные к подложке гетероструктуры, отличающийся тем, что подводящие ток электроды имеют противоположную полярность, при этом гибкие проводники соединяют подложку гетероструктуры с электродом отрицательной полярности, а электрод положительной полярности присоединен к теплоотводу.2. Полупроводниковый лазер по п. 1, отличающийся тем, что между лазерным кристаллом и теплоотводом, выполненным из меди, находится сабмаунт, изготовленный из материала с более высокой, чем у меди, теплопроводностью, например из алмаза или композита на основе алмаза, при этом электрод положительной полярности присоединен к сабмаунту.

ИЗЛУЧАТЕЛЬНЫЙ МОДУЛЬ НА ОСНОВЕ ЛИНЕЙКИ ЛАЗЕРНЫХ ДИОДОВ (ВАРИАНТЫ)

Изобретение относится к области конструирования и применения полупроводниковых лазеров, в частности разработки излучателей на основе лазерных диодов, для сборки матриц лазерных диодов, используемых в качестве источника накачки мощных твердотельных лазеров. Модуль состоит из линейки лазерных диодов (ЛЛД) и прикрепленной к ней со стороны активного слоя теплоотводящей пластинки, содержащий встроенный микроканальный теплообменник, образованный профилированной выемкой (представляющей собой ряд эквидистантно расположенных прямых параллельных каналов одинакового прямоугольного сечения, ориентированных перпендикулярно продольной оси ЛЛД и разделенных ребрами одинаковой толщины), вырезанной в поверхности пластинки в пределах области ее контакта с активным слоем и герметично закрытой линейкой. При прокачке охлаждающей жидкости через этот микротеплообменник осуществляется ее прямой контакт с активным слоем линейки, который служит одной из стенок полости, тем самым производится непосредственный отвод ...

УСТРОЙСТВО ГЕНЕРАЦИИ ЛАЗЕРНОГО ИЗЛУЧЕНИЯ

ЛАЗЕРНЫЙ ИЗЛУЧАТЕЛЬ

Изобретение относится к квантовой электронной технике, а именно к разработке мощных полупроводниковых инжекционных приборов, лазерных излучателей, диодной накачки и изделий на их основе. Технический результат заключается в уменьшении теплового сопротивления в конструкции лазерного излучателя за счет применения материалов с высокими коэффициентами теплопроводности и температуропроводности. Технический результат достигается тем, что лазерный излучатель, согласно решению, содержит теплоотводящую пластину, выполненную из керамического композиционного материала состава: алмаз 50-75 об. %, карбид кремния 15-35 об. %, кремний - остальное об. %, имеющую со всех сторон многослойное покрытие, сформированное из адгезионного промежуточного слоя и металлического покрытия с высокой электропроводностью, на верхней поверхности которой с одной длинной стороны размещен кристалл гетероэпитаксиальной пластины, а с другой длинной стороны - электроизоляционная пластина, причем кристалл и электроизоляционная ...

Halbleiter-Laservorrichtung

Eine Halbleiter-Laservorrichtung (1) ist so konfiguriert, dass auf zumindest einer der jeweiligen gegenüberliegenden Oberflächen eines Halbleiter-Laserchips (5) und eines Unterträgers (3) und der jeweiligen gegenüberliegenden Oberflächen des Unterträgers (3) und eines Kühlkörpers (2) ein oder mehrere Behandlungsbereiche (zum Beispiel Behandlungsbereiche (R5t)) angeordnet sind, wo eine Haftung eines Bonding-Materials (6) oder eines Bonding-Materials (7), das für deren Bonding verwendet wird, reduziert ist, wobei der eine oder die mehreren Behandlungsbereiche platziert sind, um in einer Lichtausbreitungsrichtung unterschiedliche Bedeckungen je nach Position in einer Array-Richtung der mehreren lichtemittierenden Bereiche (4a bis 4c) zu definieren.

Verfahren zum Anbringen von Laserdioden an einem Träger und Laserdiodenstapel

Verfahren zum Anbringen einer Laserdiode (16, 18) an einem mit einem Kühlkanal (14; 14'; 22) versehenen Kühlkörper (10; 10'; 24), mit folgenden Schritten: Anlegen der Laserdiode an den Kühlkörper über einer an die Oberfläche des Kühlkörpers (10; 10'; 24) reichende Öffnung des Kühlkanals (14; 14'; 22), derart, daß voneinander beabstandete Bereiche der Laserdiode (16, 18) auf zumindest zwei gegenüberliegenden Seiten der Öffnung angeordnet sind; und Zuführen eines flüssigen Mediums durch den Kühlkanal (14; 14'; 22) zur Herstellung einer mechanischen und elektrisch leitenden Verbindung der voneinander beabstandeten Bereiche der Laserdiode (16, 18) mit dem Kühlkörper (10; 10'; 24).

Method for determining and regulating the temperature of laser diodes, and a circuit arrangement for carrying out the method

A method for determining and regulating the temperature of laser diodes and a circuit arrangement for carrying out the method, the laser diodes being used especially in line printers and being operated in the pulsed mode. The essence of the method according to the invention is that a constant basic current, which is lower than the laser threshold current, is passed via the laser diode at the time interval at which emission of the laser radiation is suspended, during which the voltage of the laser diode is sampled at least once, and after which the sampled value is stored and evaluated, and the current supplying the laser diode is controlled as a function of the result obtained. The essence of the circuit arrangement according to the invention is that the connections of the laser diode are connected to a sample and hold unit via a voltage follower having a high input impedance, the output from which sample and hold unit is passed to an evaluation unit, while one output of the evaluation ...

TEMPERATURREGELUNG FÜR EINE LASERDIODE IN EINEM PLATTENLAUFWERK

Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere

Kantenemittierender Halbleiterlaserchip (1) mit- zumindest einem Kontaktstreifen (2), wobei der Kontaktstreifen (2) eine Breite B aufweist,- einer aktiven Zone (14), in der im Betrieb des Halbleiterlaserchips (1) elektromagnetische Strahlung erzeugt wird,- zumindest zwei Strombarrieren (4), die auf unterschiedlichen Seiten des Kontaktstreifens (2) angeordnet sind und sich längs des Kontaktstreifens (2) erstrecken, wobei- der größte Abstand V zwischen jeder der beiden Strombarrieren (4) und dem Kontaktstreifen (2) derart gewählt ist, dass das Verhältnis von größtem Abstand V zur Breite B V/B > 1 ist, und wobei- der Kontaktstreifen (2) in Bereichen hoher (21) Ladungsträgerinjektion aus einem ersten Metall besteht und in Bereichen niedriger (2) Ladungsträgerinjektion aus einem zweiten Metall besteht, wobei der elektrische Übergangswiderstand zum Halbleitermaterial, auf das der Kontaktstreifen aufgebracht ist, des ersten Metalls kleiner ist als des zweiten Metalls.

Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

Anordnung zur Erzeugung elektromagnetischer Strahlung

Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement

Es wird ein oberflächenemittierendes Halbleiterlaser-Bauelement offenbart, mit DOLLAR A - einem Resonator (3, 9), DOLLAR A - einem Halbleiterkörper (5), der eine zur Strahlungserzeugung vorgesehene Schichtenfolge (4) umfasst, DOLLAR A - einem transparenten, frequenzselektiven Wärmeleitelement (6), das sich mit einer Strahlungsdurchtrittsfläche (5a) des Halbleiterkörpers (5) in thermischem Kontakt befindet, und DOLLAR A - einem optischen Bandpassfilter (8), das geeignet ist, vorgebbare Resonatormoden zu unterdrücken. DOLLAR A Das beschriebene oberflächenemittierende Halbleiterlaser-Bauelement eignet sich besonders gut für die Verwendung in einer optischen Projektionsvorrichtung.

Verfahren zur Herstellung eines Korrosionsschutzes einer Laseranordnung

Verfahren zur Herstellung eines Korrosionsschutzes der Oberflächen von Komponenten einer Laseranordnung, die zur Wärmeabfuhr in unmittelbarem Kontakt mit einem in einem Kühlkreislauf geführten, flüssigen Kühlmedium stehen, durch Hindurchführen eines flüssigen Mediums durch den Kühlkreislauf, wobei das flüssige Medium aus reinem und entionisiertem Wasser, einer nichtwässrigen Flüssigkeit oder Mischungen daraus besteht und wobei in dem flüssigen Medium wenigstens eine Substanz aus den chemischen Stoffklassen Silane, Fluorsilane, Alkylthiole, difunktionelle organische Disulfide, Ethylendiamine, Phthalocyanine, Stickstoffheterocyclen oder 6-Mercapto-1-hexanol oder Dimethylamin als eine einen Korrosionsschutz erteilende Substanz gelöst ist.

Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung

Oberflächenemittierender Halbleiterlaser mit – einem Halbleiterchip (1), der ein Substrat (2) und eine auf dem Substrat (2) aufgewachsene Halbleiterschichtenfolge (19), die eine strahlungsemittierende aktive Zone (12) umfasst, enthält, und – einem externen Resonatorspiegel (5), dadurch gekennzeichnet, dass – das Substrat (2) eine Ausnehmung (3) aufweist und die emittierte Strahlung (6) durch die Ausnehmung (3) ausgekoppelt wird, und – zum optischen Pumpen des oberflächenemittierenden Halbleiterlasers eine außerhalb des Halbleiterchips (1) angeordnete Pumpstrahlungsquelle (8) vorgesehen ist, wobei die von der Pumpstrahlungsquelle (8) emittierte Pumpstrahlung (9) durch die Ausnehmung (3) des Substrats (9) in die aktive Zone (12) eingestrahlt wird.

HALBLEITERLASERQUELLE

Semiconductor laser component, has lead frame connected to side surface and designed as heat sink, and laser bars chip arranged on chip mounting surface of carrier and bonded with hard solder e.g. gold-tin solder

The component has a lead frame (4), a carrier (6) with a chip mounting surface and a base surface opposite to the chip mounting surface. A side surface runs from the chip mounting surface to the base surface. A laser bars chip (3) is arranged on the chip mounting surface of the carrier. The lead frame is connected to the side surface and is designed as a heat sink. The chip is bonded with hard solder e.g. gold-tin solder.

Optical amplification control apparatus, method for controlling semiconductor optical amplifier, and optical transmission equipment

Light emitting systems

A high power diode laser and method for mounting such a laser

Light emitting device having heat-dissipating element

A light emitting device (e.g. a GaN based III-V nitride device) having a heat dissipating element is provided. The device includes an active layer 160b between first and second material layers for inducing laser emission, a first electrode 154 contacting the lowermost layer 152 of the first material layers, a second electrode contacting the uppermost layer 164 of the second material layers, and a heat dissipating element in contact with the lowermost layer 152. The heat dissipating element is a thermal conductive layer 156 which contacts a region of the lowermost layer 152, while a substrate 150 is present on the remaining region of the lowermost layer 152. The thermal conductive layer may contact the lowermost layer 152 through one or more via holes formed in the substrate. A dent extending into the lowermost layer 152 may also be formed along with the via hole (figure 10).

Optoelectronic assembly

An optoelectronic assembly comprises one or more optoelectronic components, such as laser diodes, and a housing. The housing comprises an outer wall electrically connected to the optoelectronic components and configured to provide an electrical interface between the optoelectronic components and an external electronic device. The electrical connection 20 between the outer wall and the optoelectronic components comprises an electrically conductive element 40 supported on a dielectric material 42, such that the dielectric material provides structural support to the electrically conductive element between the optoelectronic components and the outer wall. Arrangements in which the electrical connection comprises an electrically conductive element having a cross sectional area in the range from 2.5x10-12 m2 to 1.75x10-11 m2 or in which the electrical connection comprises an electrically conductive element having a first thermal conductivity supported on a material having a different, lower, ...

SURFACE-EMITTING DIODE LASER WITH STRUCTURED TRANSVERSE ELECTROMAGNETIC WAVE

CONSTRUCTION UNIT WITH A DIODE LASER AND A PHOTODIODE

OPTICAL SELECTION UNIT FOR THE SELECTION OF A MOBILE STORAGE MEDIUM, IN PARTICULAR FOR THE SELECTION OF A VIDEO DISK

OPTISCHE AUSLESEEINHEIT ZUM AUSLESEN EINES BEWEG- LICHEN INFORMATIONSTRAEGERS, INSBESONDERE ZUM AUSLESEN EINER VIDEOPLATTE

MODULAR ARRANGEMENT USING LASER DIODE BUILDING GROUPS WITH PEDESTALS WITH WINGS

Transmitter photonic integrated circuit

OPTICAL READ UNIT

OPTICAL READ UNIT

DIGITAL OPTICAL NETWORK ARCHITECTURE

A digital optical network (DON) is a new approach to low-cost, more compact optical transmitter modules and optical receiver modules for deployment in optical transport networks (OTNs). One important aspect of a digital optical network is the incorporation in these modules of transmitter photonic integrated circuit (TxPIC) chips and receiver photonic integrated circuit (TxPIC) chips in lieu of discrete modulated sources and detector sources with discrete multiplexers or demultiplexers.

SEMICONDUCTOR LASER MODULE, AND METHOD FOR DRIVING THE SEMICONDUCTOR LASER MODULE

The invention provides a semiconductor laser module which can suppress overcurrent flowing into a thermo-module, wherein the thermo-module (5) carries out a heating action when a reverse current flows from lead pin (16f) through lead pin (16a), and contrarily carries out a cooling action when a current flows from the lead pin (16a) through the lead pin (16f). An overcurrent limiting means (20) is provided, which can suppress overcurrent flowing into the thermo-module (5) in its heating direction. The overcurrent limiting circuit (20) is provided with a bypass line (21), a resistor (22), and a diode (23). When a current flows in the heating direction, the diode (23) is turned on, whereby the current is shunted to the thermo-module (5) and bypass line (21) for flow, and accordingly, the overcurrent flowing into the thermo-module (5) can be effectively suppressed.

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting ...

METHOD FOR THE HIGHLY PRECISE REGULATION OF LOAD-VARIABLE HEAT SOURCES OR HEAT SINKS, AND DEVICE FOR CONTROLLING THE TEMPERATURE OF A DYNAMIC HEAT SOURCE, ESPECIALLY PUMP DIODES FOR SOLID-STATE LASERS

The invention relates to a method for the highly precise regulation of lo ad-variable heat sources or heat sinks, and to a device for controlling the temperature of a dynamic heat source, especially pump diodes for solid-state lasers. According to said method, the calculated mean value of the flow tem perature and the return temperature is preset as an actual value for regulat ing the power in order to ensure a stabilisation of the heat source even wit hout any information on the type of thermal load and the heat quantity to be dissipated, the mean reference temperature for the heat flow to or from the temperature-controlling medium being maintained at a constant value irrespe ctive of the heat quantity to be dissipated. The device is characterised in that a return temperature measuring device is provided in addition to a flow temperature measuring device arranged in the pump diode coolant circuit, bo th measuring devices being connected to an analog or digital computing unit which performs ...

SEMICONDUCTOR LASER LIGHT SOURCE

In conventional semiconductor laser light sources, since intervals of light emitter waveguides are changed or stresses which are applied on chips of a laser array are controlled in the production process, there exists a problem that the productivity is lowered. A structure of a heat sink 3a, on which a semiconductor laser array 2 is mounted in which a plurality of semiconductor lasers are arrayed at equal intervals in a stripe width direction, is configured so that the heat radiation efficiencies of the plurality of semiconductor lasers are not constant between the central region and other regions in the stripe width direction. Concretely, the heat sink is configured in such a way that an area of a second region in a second surface of the heat sink is smaller than an area of a fourth region in the second surface with which the semiconductor laser radiation portion except for the central side of the plurality of semiconductor lasers in the stripe width direction are in contact, when each ...

IMPROVED SELF MODE-LOCKING SEMICONDUCTOR DISK LASER (SDL)

A self mode locking laser and corresponding method is described. The laser comprises a resonator (2) terminated by first (3) and second (4) mirrors and folded by a third mirror (5). The third mirror comprises a reflector (15) surmounted by a multilayer semiconductor gain medium (16) that includes at least one quantum well layer and an optical Kerr lensing layer (20). A perturbator is also included that provides a means to induce a perturbation on an intensity of one or more cavity modes of the resonator. The pertubator is employed to induce a small perturbation on the intensity of the cavity modes of the resonator which is sufficient for the optical Kerr lensing layer to induce mode locking on the output field. The second mirror (4) comprises an intensity saturable mirror that provides a means for reducing the pulse widths of the generated output field e.g. to around 100 fs. A diamond heat spreader (20) is attached to the top of the half VCSEL gain medium (13) for improved cooling as well ...

PHASE CONTROL BY ACTIVE THERMAL ADJUSTMENTS IN AN EXTERNAL CAVITY LASER

The present invention relates to a wavelength tuneable external-cavity laser module, the laser being tuneable across a predetermined wavelength range and comprising: a thermally stabilised substrate; a gain medium for emitting an optical beam passing through the external cavity along an optical axis, said gain medium being placed in thermal contact with the thermally stabilised substrate; an end mirror for receiving and reflecting the optical beam within the external cavity, and a phase element for controlling the phase of the optical beam and being positioned within the external cavity between the gain medium and the end mirror, wherein said phase element comprises a material having a refractive index that varies in response to changes in temperature and has a transmissivity substantially independent of wavelength across said predetermined wavelength range. The thermally-controllable phase element in the laser external cavity is configured so as to induce a phase variation that compensates ...

SEMICONDUCTOR LASER ASSEMBLY

... 23 SEMICONDUCTOR LASER ASSEMBLY A semiconductor laser assembly is provided with a photodetector module and a laser module mounted on orthogonal surfaces of a heatsink. The photodetector module includes a photodetector and two electrically isolated wire bond blocks, each with two surfaces parallel to the orthogonal surfaces of the heatsink. The laser module includes a laser diode bonded and a wire bond region with two surfaces also parallel to the orthogonal surfaces of the heatsink. Both of the wire bond block surfaces of the photodetector modules are thus parallel to the wire bond region surfaces on the laser module, allowing wire connections to be made between parallel surfaces before the heat sink is mounted on a header. One of the surfaces of each of the wire bond blocks and regions is parallel to the pins of a header, allowing attachment of wires from the photodetector module and the laser module to the pins without rotating the header and pins.

HIGH-POWER DIODE LASER AND METHOD FOR MOUNTING THE SAME

The invention is directed to a high-power diode laser and to a method for mounting same. It is substantial to the invention to provide predetermined breaking locations in the laser bar which, during cooling after the laser bar ha s been soldered to a heat sink having a smaller thermal expansion coefficient, lead to breakage at defined locations between the single laser diodes of the laser bar. As a result of the physical division of the laser bar, it is possible to use a solder which has low ductility (hard solder) at room temperature, since destruction of the si ngle laser diodes of the laser bar as a result of mechanical stresses can be ruled ou t.

Laserdiode

DIODE LASER ARRANGEMENT.

Coaxial cooled laser modules with integrated thermal electric cooler and optical components

Cooling device for C-mount packaging semiconductor laser devices through optical fiber coupling

LASER DIODE HIGH POWER AND PROCEEDED FOR ITS ASSEMBLY

SEMICONDUCTOR LASER DEVICE

Semiconductor laser emitter has laser diode in stack with two heat dissipators for improved thermal properties

L'invention concerne un dispositif consistant en un assemblage comprenant un premier dissipateur (106), un composant laser (113), un deuxième dissipateur (109). Le premier dissipateur est un substrat semi-conducteur sur lequel est reporté le composant laser par des technologies de microbillage et sont intégrées les lignes d'interconnections permettant l'alimentation du composant laser. Ce même substrat peut intégrer les composants actifs (circuit de pilotage du laser, photodiode de contrôle par exemple) et passifs (inductances, capacités, résistances) de mise en oeuvre des composants actifs. Les composants actifs peuvent également reportés par des techniques soit de microbillage ou de soudure conventionnelles. Le deuxième dissipateur est, soit reporté sur le composant (113) soit directement réalisé sur la face arrière du composant laser par le procédé décrit dans l'invention.

양측 냉각형 의료미용용 반도체 레이저 시스템

... 본 발명은 접촉창이 직접 피부와 접촉할 수 있는 양측 냉각형 의료미용용 반도체 레이저 시스템에 관한 것이다. 본 발명의 양측 냉각형 의료미용용 반도체 레이저 시스템은 반도체 레이저 어레이, 반도체 레이저 어레이 발광면의 전단부에 위치한 광도파로, 광도파로의 광출구단에 접착되어 있는 투명한 접촉창, 한 쌍의 냉각블록, 및 제1통수블록을 포함하고, 상기 제1통수블록은 베이스부 및 베이스부 상부에 위치하는 U형 헤드부로 나뉘우고, 광도파로의 중부 및 뒷부분은 U형 헤드부에 삽입되며, 해당되는 광도파로의 상부에는 고정블록이 설치되어 광도파로를 압착고정 하며, 광도파로와 U형 헤드부의 측벽사이에는 간극을 구비하고, 상기 한쌍의 냉각블록은 광도파로의 앞부분으로 연장되어 접촉창 및 광도파로의 앞부분을 감싸고 있다. 본 발명에 따른 시스템은 독특한 냉각 구조를 사용함으로써, 피부와 직접 접촉하는 작업단면(working end surface)의 온도는 빙점에 가깝고, 구조가 치밀하며 안정적이다.

MODULATABLE VECSEL AND DISPLAY APPARATUS USING VECSEL, CAPABLE OF MODULATING LASER OUTPUT BY IMPROVING STRUCTURE OF MIRROR OF EXTERNAL RESONANCE

PURPOSE: A modulatable VECSEL(Vertical External Cavity Surface Emitting Laser) and a display apparatus using the VECSEL are provided to offer full color images without extra external optical modulator or color wheel by controlling laser outputted to correspond to images to project. CONSTITUTION: A modulatable VECSEL includes a pumping light source(31), a laser chip(41), a folding mirror(47), and a driving mirror unit(50). The pumping light source(31) irradiates a pump beam. The laser chip(41) is excited by the pump beam irradiated from the pumping light source(31) and irradiates laser beam having a predetermined wavelength. The folding mirror(47) forms the resonator with the laser chip(41), converts a path of an incident laser beam, and is arranged slantingly against an incident light axis(I) irradiated from the laser chip(41) having a gap from the laser chip(41). The driving mirror unit(50) is arranged to face a concave reflecting plane(47a), forms the external resonator, and modulates ...

HIGH EFFICIENT SECOND HARMONIC GENERATION VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER, CAPABLE OF IMPROVING EFFICIENCY OF CONVERTING WAVELENGTH OF SHG CRYSTAL

PURPOSE: A high efficient second harmonic generation vertical external cavity surface emitting laser is provided to reduce a half peak width of a laser beam without increasing thicknesses of a birefringent filter and a thermal diffusing device by using an etalon filter. CONSTITUTION: A high efficient second harmonic generation vertical external cavity surface emitting laser includes a laser chip(21), a first etalon filter layer(23), a second etalon filter layer(25), a first mirror(32), a second mirror(34), and an SHG(Second Harmonic Generation) crystal(33). The laser chip(21) generates a laser beam of a predetermined wavelength. The first etalon filter layer(23) is formed on the laser chip(21). The second etalon filter layer(25) is formed on the first etalon filter layer(23), and has a refractive index different from that of the first etalon filter layer(23). The first mirror(32) is slantingly arranged by being separated from the laser chip(21). The second mirror(34) reflects the laser ...

HEAT DISSIPATION MODULE HAVING A SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SUCH A HEAT DISSIPATION MODULE

The invention relates to a heat dissipation module having a semiconductor element (2) comprising a first side and an opposing second side (13, 12), to a first electrically conductive heat dissipating body (3) which has a first contact surface (6) with a first section (8) and an adjacent second section (9), to a second electrically conductive heat dissipation body (4) which has a second contact surface (7) that faces the first contact surface (6) and has a third section (10) and adjacent thereto a fourth section (11), the semiconductor element (2) being arranged between the two heat dissipating bodies (3, 4), the first side (13) being joined to the first section (8) and the second side (12) to the third section (10) such that the first side (12) of the semiconductor element (2) is contacted thermally and electrically with the first section (8) of the first contact surface (6) and the second side (12) of the semiconductor element (2) is contacted thermally and electrically with the third ...

HEAT TRANSFER DEVICE HAVING AT LEAST ONE SEMICONDUCTOR ELEMENT, PARTICULARLY A LASER OR LIGHT-EMITTING DIODE ELEMENT, AND METHOD FOR THE ASSEMBLY THEREOF

The invention relates, among other things, to a method for the assembly of a semiconductor component, wherein the semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat-conducting body each. For this purpose, the heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element, wherein a spacer, which with regard to the third connection is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the requirement that the joining zone thickness of the third connection is greater than that of the first or the second joining zone, ensures that defined joining zone thicknesses in the bonded connection are maintained during the joining process. The third connection is used for the at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink that is ...

COOLING DEVICE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR COOLING ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

The invention relates to a cooling device for semiconductor elements. The aim of the invention is to increase the effectiveness of the corrosion proofing and to increase the service life of the cooling device by reducing the corrodibility of the cooling channels while safeguarding the reliability of the device in relation to the semiconductor element. The invention is characterized in that a cooling channel structure which is interspaced from the assembly surface for the semiconductor element has cooling ribs that are integrally bonded to the heat-conducting zone and that mainly contain tantalum and/or niobium in at least one core zone.

METHOD AND SYSTEM FOR COOLING AT LEAST ONE LASER DIODE WITH A COOLING FLUID

A method and system for cooling at least one laser diode with a cooling fluid which does not come into direct contact with the at least one laser diode is presented. Liquid cooled heat sinks are provided on opposing sides of each laser diode. Individual modules are held together by a single holding mechanism allowing individual modules to be removed from the array for easy testing or replacement.

Micro-scale cooling element

The invention relates to a micro-scale cooling element (1) having a mounting surface (2) for a constituent part, in particular a semiconductor component, that is to be cooled, which element is configured, in particular, cuboidally and has in the interior a micro-scale cooling structure (3) that is connected via connecting conduits (4) to at least one inflow opening (5) and at least one outflow opening (6) through which a cooling medium is conveyable to and dischargeable from the micro-scale structure (3), the micro-scale cooling element having a monolithic structure.

Semiconductor laser with reduced heat loss

A semiconductor laser having a semiconductor chip (1) which contains an active layer (5) and emits radiation in a main radiating direction (6). The active layer (5) is structured in a direction perpendicular to the main radiating direction (6) in order to reduce heating of the semiconductor chip (1) by spontaneously emitted radiation (10).

Optical semiconductor array module, method of fabricating the module, and external board mounting structure of the module

An optical semiconductor array module comprising an optical semiconductor array device constituted by a plurality of semiconductor laser diode, light-emitting diode elements or a plurality of semiconductor photo diode elements, an electronic device for driving and controlling the optical semiconductor array device, a cube-shaped package case for housing the optical semiconductor array device and the electronic device therein, an optical fiber array optically coupled to the optical semiconductor array device, a supporting member for holding and fixing the optical fiber array to one surface of the cube-shaped package case, and a terminal portion having a plurality of pins for electrically connecting an external circuit board to the electronic device. The terminal portion is formed by extending the terminal portion from at least one of surfaces forming the package case, excluding a surface on which the optical semiconductor array device and the electronic device are mounted and a surface opposite ...

Laser diode component with heat sink and method of producing a plurality of laser diode components

A laser diode component includes a semiconductor body secured on a heat sink which includes a dissipator and an electrically and thermally conductive connection plate. The semiconductor body is secured to the connection plate, which in turn is applied to the dissipator. The connection plate is formed of a material having a coefficient of thermal expansion that is similar to the coefficient of thermal expansion of the semiconductor material of the semiconductor body. A connecting layer between the semiconductor body and the connection plate is preferably formed of hard solder. The dissipator is secured to the connection plate, for example through the use of a thermally conductive adhesive. A method for producing a plurality of laser diode components includes making many such laser diode components as a unit, and then subsequently cutting them apart.

High temperature semiconductor diode laser

A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.

PHOTO-PUMPED SEMICONDUCTOR OPTICAL AMPLIFIER

An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.

Method of tuning optical components integrated on a monolithic chip

A method of tuning optical components integrated on a monolithic chip, such as an optical transmitter photonic integrated circuit (TxPIC), is disclosed where a group of first optical components are each fabricated to have an operating wavelength approximating a wavelength on a standardized or predetermined wavelength grid and are each included with a local wavelength tuning component also integrated in the chip. Each of the first optical components is wavelength tuned through their local wavelength tuning component to achieve a closer wavelength response that approximates their wavelength on the wavelength grid.

Vertical external cavity surface emitting laser capable of recycling pump beam

A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled to increase pumping beam absorption is provided. The VECSEL comprises: an active layer for generating and emitting signal light with a predetermined wavelength; an external mirror separated from and facing a top surface of the active layer and adapted to transmit a first portion of the signal light generated by the active layer and to reflect a second portion of the signal light to the active layer; a pump laser for emitting a pumping beam to excite the active layer toward the top surface of the active layer; and a double band mirror (DBM) positioned beneath the lower surface of the active layer and adapted to reflect both the signal light generated by the active layer and a portion of the pumping beam which is not absorbed in the active layer.

METHOD FOR JOINTING A SEMICONDUCTOR ELEMENT AND A HEAT PIPE

An exemplary method for jointing a semiconductor element and a heat pipe includes: providing a heat pipe shell which has an open end; forming a capillary structure layer on an inner wall of the heat pipe shell; jointing a semiconductor element with the heat pipe shell by metal jointing; injecting a working fluid into the heat pipe shell and discharging air or gas from the heat pipe shell; and sealing the open end of the heat pipe shell.

APPARATUS AND METHODS FOR THREE-DIMENSIONAL SENSING

A three-dimensional (3D) sensing apparatus together with a projector subassembly is provided. The 3D sensing apparatus includes two cameras, which may be configured to capture ultraviolet and/or near-infrared light. The 3D sensing apparatus may also contain an optical filter and one or more computing processors that signal a simultaneous capture using the two cameras and processing the captured images into depth. The projector subassembly of the 3D sensing apparatus includes a laser diode, one or optical elements, and a photodiode that are useable to enable 3D capture.

LASER ELEMENT HAVING A THERMALLY CONDUCTIVE JACKET

A laser element includes a laser rod and a thermally conductive jacket on an exterior surface of the laser rod. The thermally conductive jacket assists in dissipating heat generated in the laser rod during the application of pump energy to the laser rod. 1. A laser element for use in a laser system comprising:a laser rod; anda thermally conductive jacket on an exterior surface of the laser rod.2. The laser element of claim 1 , wherein:the laser rod has a central axis; andthe jacket surrounds the exterior surface of the laser rod extending along the central axis.3. The laser element of claim 2 , wherein the thermally conductive jacket is bonded to the exterior surface.4. The laser element of claim 3 , wherein the thermally conductive jacket comprises a metal selected from the group consisting of silver claim 3 , gold claim 3 , copper alloy claim 3 , and aluminum nitride.5. The laser element of claim 3 , wherein the thermally conductive jacket has a thickness in the range of 0.002-0.020 inch.6. The laser element of claim 1 , wherein the laser rod is selected from the group consisting of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser rod claim 1 , a thulium-doped yttrium aluminum garnet (Tm:YAG) laser rod claim 1 , a ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser rod claim 1 , and a holmium-doped yttrium aluminum garnet (Ho:YAG) laser rod.7. The laser element of claim 1 , wherein the thermally conductive jacket comprises a reflective surface facing the exterior surface of the laser rod.8. A laser system comprising: a laser rod; and', 'a thermally conductive jacket on an exterior surface of the laser rod;, 'a laser element comprisinga chiller configured to deliver a flow of cooling liquid over the thermally conductive jacket; anda pump source configured to pump an end of the laser rod with pump energy; the laser rod generates laser light in response to the pump energy; and', 'heat from the laser rod is conducted through the jacket to the flow of ...

Control circuit for optoelectronic module with integrated temperature control

A microprocessor is used to control the temperature of a laser emitter and thereby regulate the wavelength of optical signals from the laser. A serial interface in the microprocessor provides input and output lines to a host device, and temperature lookup tables are stored in nonvolatile memory. Control logic processes information stored in the memory as well as information on operating conditions of the laser emitter to precisely control the temperature of the laser emitter. A thermo-electric cooler adjusts the temperature of the laser emitter.

Optical subassembly with a heat-radiating fin and an optical transceiver installing the same

The present invention provides a configuration to improve a heat-radiating effect of an optical subassembly having a co-axial package and a pluralilty of lead pins arranged in an arrayed shape. The heat generated inside the subaasembly may be dissipated through the heat-radiating fin attached to a flat surfce, not a curved side surface of the subassembly such that the lead pins provided in the subassembly pass through the slot provided in the heat-radiating fin. The heat-radiating fin has a slab portion attached to the cover of the transciver, when the subassembly is installed witbin the t transciver. Thus, the hea gneratied in the subassembly can be easily and effectively diipated to the cover.

Optical module

A optical module according to the present invention includes an optical semiconductor device, a package housing the optical semiconductor device, a first pattern provided on an upper surface of the package, a second pattern provided on a side surface continuous with the upper surface of the package, a flexible substrate provided on the first pattern and extending from the upper surface to a side surface side of the package and solder joining the first pattern and the flexible substrate together, wherein the solder is spread between a portion of the flexible substrate, the portion extending from the upper surface to the side surface side of the package, and the second pattern.

Method of controlling semiconductor laser

A semiconductor laser has a wavelength-selection portion whose refractive index is controllable with a heater (14). The starting sequence has a first step for adjusting the heat value of the heater (14) until it reaches a given value. Once this is established, a wavelength control sequence includes a second step (S4) for correcting the wavelength of the semiconductor laser according to the detection result of the oscillation wavelength of the semiconductor laser after the starting sequence. This allows an accurate restart even if the heater has deteriorated.

Heat sink and laser diode

The present invention is directed to improve reliability by preventing deterioration in the structure of an inner wall of a water channel (3) caused by galvanic corrosion. A heat sink (1A) in which a water channel (3) of a cooling fluid is formed by stacking and bonding a plurality of thin plates (21-25), in which a surface in the water channel is made of the same metal material except for at least an end of a bonded part of the thin plates.

Semiconductor laser device

MODE-LOCKED LASER DIODE AND METHOD OF CONTROLLING WAVELENGTH THEREOF

PROBLEM TO BE SOLVED: To generate light pulses whose wavelength intervals in wavelength variable region are sufficiently large and whose frequency chirping is suppressed to such a degree that they can be used in an optical communication system. SOLUTION: The mode-locked laser diode is composed of a light pulse generator 101 including a MLLD 1, a CW light source 19, a first optical coupling means 110, and a second optical coupling means 112. An optical waveguide 30 including a light gain region 3, a light modulation region 2 and a passive guide wave region 4 is formed in the MLLD 1. A constant current is injected into the light gain region 3 from a first current source 11 through a p-side electrode 9 and an n-side common electrode 7. A reverse bias voltage is applied to the light modulation region 2 by a voltage source 12 through the p-side electrode 8 and the n-side common electrode 7. Also, a modulation voltage at a frequency which is a positive integer multiple of a resonator orbiting ...

Halbleiterlaser-Bauelement und Verfahren zu seiner Herstellung

Wärmesenke für ein diskretes Halbleiterbauelement und Verfahren zu dessen Herstellung sowie elektronische Komponente

Wärmesenke (1) für ein diskretes Halbleiterbauelement (9), das einen ersten Ausdehnungskoeffizienten aufweist, mit einer Oberseite (5) und einer Unterseite (6), wobei die Wärmesenke (1) aus mehreren Schichten aufgebaut ist, wobei mindestens eine an die Ober- oder die Unterseite (5, 6) grenzende Außenschicht (7, 8) aus einem metallischen Werkstoff mit einem zweiten Ausdehnungskoeffizienten gebildet ist, und wobei eine Innenschicht (2) aus einem Halbleitermaterial mit einem dritten Ausdehnungskoeffizienten vorgesehen ist, die zu der Außenschicht (7, 8) eine innige mechanische Verbindung aufweist, so dass die Außenschicht (7, 8) an der Ober- oder Unterseite einen Ausdehnungskoeffizienten aufweist, der dem ersten Ausdehnungskoeffizienten des auf die Ober- oder Unterseite montierbaren Halbleiterbauelements (9) angenähert ist, wobei in der Innenschicht (2) der Wärmesenke aktive Bauelemente (12, 14) integriert sind.

ANORDNUNG VON OPTISCHEN HALBLEITERELEMENTEN

Offenbart ist eine Anordnung mit einer Vielzahl von optischen Halbleiterelementen. Die Halbleiterelemente werden jeweils über ein Federelement gegen einen Halbleiterelementträger gespannt. An dem Federelement liegt zusätzlich ein einem jeweiligen Halbleiterelement zugeordnetes optisches Element an, wobei das Federelement dabei derart ausgestaltet ist, dass es den Abstand zwischen dem Halbleiterelement und dem optischen Element fest definiert.

Verfahren zum Herstellen eines kantenemittierenden Halbleiterlasers und kantenemittierender Halbleiterlaser

Verfahren zum Herstellen eines kantenemittierenden Halbeiterlasers (100) mit einer ersten Nitrid-basierten Laserdiode (2) und einer zweiten Nitrid-basierten Laserdiode (3) aufweisend folgende Verfahrensschritte:- Bereitstellen eines gemeinsamen Aufwachssubstrats (1), und- Epitaktisches, monolithisch integriertes Aufwachsen der ersten Laserdiode (2) und der zweiten Laserdiode (3) auf dem gemeinsamen Aufwachssubstrat (1), wobei die erste und die zweite Laserdiode (2, 3) geeignet sind, Strahlung unterschiedlicher Wellenlänge zu emittieren, wobei die erste Laserdiode (2) und die zweite Laserdiode (3) an unterschiedlichen Kristallachsen und somit auf verschiedenen Oberflächenorientierungen des Aufwachssubstrats (1) gewachsen werden, undwobei das Aufwachssubstrat (1) unterschiedlich schräge Aufwachsflächen aufweist, undwobei das Aufwachssubstrat (1) eine Ausnehmung (10) aufweist, sodass die erste Laserdiode (2) auf einer Oberseite des Aufwachssubstrats (1) angeordnet ist und die zweite Laserdiode ...

Wärmeübertragungsvorrichtung zur doppelseitigen Kühlung eines Halbleiterbauelementes und Verfahren zu seiner Montage

Wärmeübertragungsvorrichtung mit wenigstens einem Halbleiterbauelement 10, insbesondere einem Laser- oder Leuchtdiodenelement, einem ersten Wärmeleitkörper 20, wenigstens einem zweiten Wärmeleitkörper 30 wobei das Halbleiterbauelement 10 auf einer ersten Seite wenigstens eine erste, zumindest abschnittsweise ebene, Kontaktfläche 11 und auf wenigstens einer, der ersten Seite abgewandten, zweiten Seite wenigstens eine zweite, zumindest abschnittsweise ebene, Kontaktfläche 12 aufweist, und zumindest abschnittsweise zwischen dem ersten und dem zweiten Wärmeleitkörper 20 und 30 angeordnet ist, der erste Wärmeleitkörper 20 wenigstens einen ersten Wärmeaufnahmeabschnitt 25 mit wenigstens einer ersten Wärmeeintrittsfläche 21 aufweist, die der ersten Kontaktfläche 11 in einer dem Halbleiterbauelement 10 abgewandten Richtung zumindest abschnittsweise gegenüberliegt, und durch wenigstens einen sich in der senkrecht zur ersten Kontaktfläche 11 orientierten Flucht des Halbleiterbauelementes 10 von der ...

Semiconductor diode laser

In the case of a semiconductor diode laser having a reinforced active part (6) and a passive part (7) on which the light of the active part acts, it is provided that the thermal balances resulting from heating by the current source and cooling by the couplings to the heat sink (cooling base) (4) produce different temperature changes in the passive part (7) and active part (6) when the laser is being tuned by varying the supply current at the operating point, such that the current tuning rate of the DBR resonant frequency is equal to or less than the current tuning rate of the modes in the case of a passive part (7) in the form of a DBR reflector, and such that the current tuning rate of the modes of the overall resonator is approximately equal to the current tuning rate of the reinforcement in the case of a broadband passive part. ...

Opto-electronic component for emitting radiation links to a heat sink for pulsed operation with a duration of pulse

During pulsed operation, an opto-electronic component's (1) temperature changes at a thermal time constant adapted to a duration of pulse in order to reduce amplitude in temperature changes. The thermal time constant for temperature changes during pulsed operation is assigned a value so as to reduce the amplitude in temperature variations during pulsed operation and varying mechanical loads. An independent claim is also included for a method for producing an opto-electronic component.

Light source device and projection video display apparatus provided with light source device

A laser light source module (10) is composed of a plurality of unit laser light source modules each of which emits laser light of one color, and when the laser light source module (10) is composed of the unit laser light source modules of two or more colors, the unit laser light source module in which the median of a temperature range where practical luminance can be obtained is high is thermally connected to an evaporator (25) on the further upstream side of the flow of a refrigerant than the unit laser light source module in which the median of the temperature range where the practical luminance can be obtained is low.

Optical amplifiers

TEMPERATURE CONTROL OF LIGHT-EMITTING DEVICES

The temperature of the junction of a light-emitting semiconductor junction device 1 (e.g. an LED or laser diode) is measured by using the forward bias voltage/current characteristic of the device to provide an indication of the junction temperature and then controlling the temperature of the junction to a predetermined value in order to stabilise the output wavelength of the device. As shown the forward bias current of the device is measured by ammeter 3 and the forward voltage is measured by voltmeter 4. A signal processor 5 calculates the junction temperature and controls a temperature controller 6 to heat or cool the device. Alternatively the signal processor 5 may control the current source 2 and thereby vary the temperature of the junction by direct heating. ...

Semiconductor laser device and method of fabricating semiconductor laser device

Mounting semiconductor lasers on heat sinks

A semiconductor laser device comprises: a semiconductor laser chip 100a ; a heat sink 200a on which said semiconductor laser chip 100a is mounted via a solder layer 8 ; a lower electrode formed on said semiconductor laser chip 100a comprising a layer 7b which is non-alloyed with the solder layer 8, and within prescribed distances from direct below the center line in the longitudinal direction of the light emitting region 5 of the laser, and layers 7c alloyed with the solder layer 8. The structure reduces the internal stress generated due to the difference in coefficients of the thermal expansion between the laser chip 100a and the heat sink 200a at the light emitting region 5. In other arrangements, the solder layer has a gap or is of lower melting point beneath the region 5.

A high power diode laser and method for mounting such a laser

The high-power diode laser comprises a laser bar (1) that is provided with breaking locations (7.1, 7.2) at predetermined positions. The laser bar is soldered to a heat sink (2) having a smaller thermal expansion coefficient. After being soldered and during cooling, the breaking locations defined by grooves (5.1, 5.2, 5.3) cause the bar to break at defined locations between the single laser diodes (6.1, 6.2, 6.3 and 6.4). As a result of the physical division of the laser bar (1), it is possible to use a solder (8) such as gold/tin which has low ductility at room temperature, since destruction of the single laser diodes (6.1, 6.2, 6.3 and 6.4) of the laser bar (1) as a result of mechanical stresses can be ruled out. The heat sink (2) may comprise diamond.

SEMICONDUCTOR LASERS

Scalable thermally efficient pump diode systems

Semiconductor diode construction

... 1,079,033. Semi-conductor laser diode. NATIONAL RESEARCH DEVELOPMENT CORPORATION. June 4, 1964 [June 5, 1963], No. 22457/63. Headings H1C and H1K. Molybdenum stud heat sink 4 is provided with a conductive layer of gold and zinc and secured to the P-type region 1 of a laser diode while molybdenum stud heat sink 5 is provided with a conductive layer of gold and tin and secured to the N-type region 2. The diode which may be of gallium arsenide or phosphide is gold plated 6 around the base of each stud to within 100Á of the junction 3 which is left free. The sides of the diode are coated one at a time, a wire being used to cover up the N-P junction. The wire is accurately located by passing current through the diode so that it emits radiation from the junction and positioning the wire between the junction and a silicon photo-cell so as to cut-off completely the radiation to the photo-cell. The plating improves heat flow from the junction.

BAUEINHEIT MIT EINEMHALBLEITERLASER UND EINER PHOTODIODE

WAVELENGTHVARIABLE DIODE LASER ELEMENT, AND DEVICE AND PROCEDURE FOR ITS CONTROL

SEMICONDUCTOR LASER DEVICE

Low cost optical bench having high thermal conductivity

VCSEL AND VCSEL ARRAY HAVING INTEGRATED MICROLENSES FOR USE IN A SEMICONDUCTOR LASER PUMPED SOLID STATE LASER SYSTEM

A vertical cavity surface emitting laser (VCSEL) device with improved power and beam characteristics. The VCSEL device contains one VCSEL or an array of VCSELs. Each VCSEL has a corresponding integrated microlens, and a heat sink is attached to the device side of the VCSEL device. The heat sink allows improved heat dissipation., and therefore provides improved power characteristics of the VCSEL device output laser beam. The microlens or microlens array allows easier and more compact focusing of the VCSEL device output laser beam. The VCSEL device can be used in a variety of optical systems, and its improved power and focusing characteristics provide a compact, low power, low cost laser system.

METHOD OF MANUFACTURING COOLING BLOCKS FOR SEMICONDUCTOR LASERS

THERMAL COMPENSATION FOR BURST-MODE LASER WAVELENGTH DRIFT

An apparatus comprising a burst-mode laser(610) comprising an active layer(720) and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser(610) causes the optical signal to shift in wavelength, and a heater(620) thermally coupled to the active layer(720) and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer(720) based on timing of the burst period.

LASER MODULE

Provided is an inexpensive module structure wherein it is possible to drive an LD array at low stress and at an appropriate temperature. The module is provided with a heat sink (3) for releasing the heat from a member which comes into contact therewith, a submount substrate (4) disposed on the heat sink (3) and configured from an insulating material, a feed layer (5A) disposed on the submount substrate (4), and a semiconductor laser array (6) having a plurality of light-emitting units disposed in parallel on the feed layer (5A), wherein: the linear expansion coefficient of the submount substrate (4) is smaller than the linear expansion coefficient of the semiconductor laser array (6); and the linear expansion coefficient of the submount substrate (4) when connected to the heat sink (3), which has a linear expansion coefficient higher than that of the semiconductor laser array (6), is set to be within a predetermined range which includes the linear expansion coefficient of the semiconductor ...

SEMICONDUCTOR LASER LIGHT SOURCE

A problem of prior art semiconductor laser beam sources is that, in the production process, the spacing between light emitter wave guides is changed, or the stress applied to a laser array chip is controlled, thereby decreasing productivity. A semiconductor laser array (2), comprising stripes of a plurality of semiconductor lasers arranged at equal intervals in the stripe width direction, is mounted on a heat sink (3a) whereof the shape has a constitution wherein the plurality of semiconductor lasers have different heat dissipation efficiencies between a region towards the center in the stripe width direction and other regions. Concretely, the constitution is such that, when converted to a surface area per semiconductor laser, the surface area of a second region on a second side of the heat sink is smaller than the surface area of a fourth region on the second side in contact with the heat dissipating portion of semiconductor lasers other than those towards the center in the stripe width ...

MULTI-BEAM SEMICONDUCTOR LASER AND METHOD FOR PRODUCING THE SAME

This is disclosed a multi-beam semiconductor laser comprising: an active layer; a first and second cladding layer sandwiching the active layer,the second cladding layer being made of a first material; a contact layer provided on the second cladding layer; a current block layer provided in the second cladding layer, the current block layer being made of a second material and being spaced from the active layer with a predetermined distance; a dividing part provided above the current block for physically dividing the contact layer into two areas; and electrodes respectively provided on the divided areas of the contact layer.

Method of assembling light-emitting apparatus

Light source device

LASER COMPONENTS HAS THERMAL BEHAVIOR IMPROVES AND MANUFACTORING PROCESS

Optical module with ceramic package

An optical module with an arrangement is disclosed in which the module has the LD, the TEC, and the lens with the lens carrier also mounted on the TEC. The signal light from the LD is concentrated by the lens and reflected by the mirror each assembled with the lens carrier mounted on the TEC. The TEC is mounted on the bottom metal that covers the bottom of the ceramic package, the first layer of which is widely cut to set the TEC therein. The FPC is coupled in at least two edges of the first ceramic layer left from the cut.

Serially interconnected vertical-cavity surface emitting laser arrays

Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Method, Circuitry and Apparatus for Outputting a Stable Optical Signal in a Dense Wavelength Division Multiplexing Device During Fast Changes of Operating Conditions

The disclosure relates to a fast and stable method of output wavelength control in a DWDM optical device, and a circuit configured to perform the method. The method and circuit can control of timing and overshoot during conditions of rapid operational changes, such as during power-on or restart of the device. The method and circuit includes optimized APC, TEC and electro-absorption (EA) modulator control hardware and algorithms, to effectively control transient processes. In the present disclosure, software and circuitry based on the method(s) are achieved in part by optimizing APC, EA and TEC control algorithms. The present disclosure combines low-cost methodology and hardware. In combination with hardware/circuit optimization, one can achieve fast turn-on of an optical output signal at a stable wavelength. The method and circuit provides a stable power-up process in which a change of wavelength is small enough to meet DWDM specification requirements, to ensure the elimination and avoidance of crosstalk in adjacent channels in dense wave (sub)systems.

Multi-wavelength high output laser source assembly with precision output beam

A laser source assembly ( 210 ) for generating an assembly output beam ( 212 ) includes a first laser source ( 218 A), a second laser source ( 218 B), and a dispersive beam combiner ( 222 ). The first laser source ( 218 A) emits a first beam ( 220 A) having a first center wavelength, and the second laser source ( 218 B) emits a second beam ( 220 B) having a second center wavelength that is different than the first center wavelength. The dispersive beam combiner ( 222 ) includes a common area 224 that combines the first beam ( 220 A) and the second beam ( 220 B) to provide the assembly output beam ( 212 ). The first beam ( 220 A) impinges on the common area ( 224 ) at a first beam angle ( 226 A), and the second beam ( 220 B) impinges on the common area ( 224 ) at a second beam angle ( 226 B) that is different than the first beam angle ( 226 A). Further, the beams ( 220 A) ( 220 B) that exit from the dispersive beam combiner ( 222 ) are substantially coaxial, are fully overlapping, and are co-propagating.

Frequency tunable terahertz transceivers and method of manufacturing dual wavelength laser

Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate and output optical signals of respectively different wavelengths; and an optical device receiving the outputted optical signals to generate a terahertz wave.

Intra-cavity optical parametric oscillator

An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

Heat sink for a pulsed high-power laser diode

A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm 2 , preferably approximately 5 mJ/mm 2 , and having a pulse duration of approximately 100 μs to approximately 2,000 μs, and the primary layer has a layer thickness which is between approximately 200 μm and approximately 2,000 μm, preferably between approximately 400 μm and approximately 2,000 μm.

Light emitting device and package component

A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and a backwall portion provided to stand upright on an innermost part of the bottom portion, and the package component in which a cavity is provided in an inner side, and a light emitting element mounted on an inner side surface of the backwall portion of the package component, and including a light emitting surface on an upper end part, wherein a plurality of said light emitting element mounting components are stacked in a depth direction of the cavity to direct toward an identical direction.

Optical module

There are provided an optical module including a semiconductor laser including a P-side electrode and an N-side electrode, and a semiconductor laser driver circuit that drives the semiconductor laser so as to output an optical signal from the semiconductor laser according to a pattern of a differentially transmitted digital electric signal, and the semiconductor laser driver circuit includes a positive-side terminal and a negative-side terminal for differentially transmitted non-inverted data, and a positive-side terminal and a negative-side terminal for differentially transmitted inverted data, and one terminal for the non-inverted data is electrically connected to one electrode of the semiconductor laser, and the other terminal for the non-inverted data, one terminal for the inverted data and the other terminal for the inverted data each are connected to the other electrode of the semiconductor laser.

Method for Manufacturing Heat Dissipation Bulk of Semiconductor Device

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

Diamond heat sink in a laser

A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced nitrogen content, is a reduced carbon-13 content, is a monocrystalline or multilayer low-strain diamond, or has a thermal conductivity of greater than 2200 W/mK.

Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus

A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Wavelength tunable laser device, optical module, and method of controlling wavelength tunable laser

Provided is a power saving and highly reliable wavelength tunable laser device. A wavelength tunable laser device 10 of the present invention includes: a wavelength tunable laser 11 including: a laser resonator including a light source 111 and wavelength tunable mechanisms 112 and 113; and light loss control units 114 a and 114 b; a temperature detecting element 12 detecting a temperature of the wavelength tunable laser 11; and a controller 13, wherein the controller 13 obtains temperature information a of the wavelength tunable laser 11 from the temperature detecting element 12, calculates wavelength tunable control parameters d and e and light loss control parameters b 1 and b 2 based on the temperature information a, controls the wavelength tunable mechanisms 112 and 113 based on the wavelength tunable control parameters d and e, and controls light loss control units 114 a and 114 b based on the light loss control parameters b 1 and b 2.

Semiconductor laser module and manufacturing method thereof

To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

Light projection unit and light projection apparatus

A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.

Light projection unit and light projection device

A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.

Means for improved implementation of laser diodes and laser diode arrays

A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Compression Mount for Semiconductor Devices, and Method

A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state.

Semiconductor optical integrated device

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Method to switch emission wavelength of tunable laser diode

The method to change the emission wavelength of a tunable LD is disclosed. In an ordinary state, the method monitors conditions not only relating to determine the emission wavelength but conditions independent of the emission wavelength by an ordinary A/D-C implemented within the controller. Responding to an instruction to switch the emission wavelength, the controller only monitors the former conditions affecting the determination of the emission wavelength. The sampling rate of the ordinary A/D-C is equivalently enhanced without installing an additional A/D-C.

High Power Semiconductor Laser Diodes

A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEon a submount having a second coefficient CTEand a cooler having a third coefficient CTE. The submount/cooler assembly shows an effective fourth coefficient CTEdiffering from CTE. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEis selected to be either lower than both CTEand CTEor is selected to be between CTEand CTE. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTE. Both result in a CTEvarying across the submount's thickness. 1. A method for making a high power laser source of more than one W , said laser source including a bar of laser diodes having a light-emitting active semiconductor region , a cooling element and a submount between said laser bar and said cooling element ,{'sub': 'bar', 'said laser bar having a first coefficient of thermal expansion (CTE),'}{'sub': 'sub', 'said submount having a second coefficient of thermal expansion (CTE),'}{'sub': 'cool', 'said cooling element having a third coefficient of thermal expansion (CTE), and'}{'sub': 'eff', 'a submount/cooler assembly consisting of said submount and said cooling element, said submount/cooler assembly having an effective fourth coefficient of expansion (CTE),'}wherein{'sub': eff', 'bar', 'eff', 'bar, 'selecting said fourth coefficient (CTE) different by a predetermined amount from said first coefficient (CTE), CTE≠CTE,'}hard soldering said bar of laser diodes to said submount andhard soldering said submount to said cooling element,thereby stressing said laser bar's active region to effect a deformation of its semiconductor crystal lattice.2. The method according to claim 1 , wherein{'sub': bar', 'eff, 'the predetermined amount of difference between the first coefficient (CTE) and ...

Light emitting systems

A laser diode grid element comprising laser diodes arranged along a corresponding substantially flat surface; and a collimator for each laser diode for generating collimated light beams substantially perpendicular on the respective substantially flat surface. The laser diodes are comprised in standard packages including a base plate serving as cooling surface of the laser diode, a metal housing arranged on the base plate to protect the laser diode, and at least two driving pins which extend from the laser diode through the base plate and which are used for driving the laser diode within the package. The laser diode grid element includes a heat sink arranged in contact with the base plates, and the at least two driving pins of each laser diode extend at least partially through the heat sink. Also provided are light emitting systems comprising such grid elements, and an optical component for use in such system.

METHOD FOR FABRICATING OPTICAL DEVICE

A method for fabricating an optical device including: a first step of preparing a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness, a second step of mounting the carrier on a temperature control device after the first step, and a third step of mounting a first optical component on the first area of the carrier after the second step. 1. A method for fabricating an optical device comprising:a first step of preparing a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness;a second step of mounting the carrier on a temperature control device after the first step; anda third step of mounting a first optical component on the first area of the carrier after the second step.2. The method as claimed in claim 1 , wherein:the second step is carried out by soldering; andthe third step is carried out by laser welding.3. The method as claimed in claim 1 , wherein the first optical component is an optical isolator.4. The method as claimed in claim 1 , further comprising a fourth step of mounting a second optical component on a third area of the carrier claim 1 , the third area having a thickness larger than the first thickness.5. The method as claimed in claim 4 , wherein the second optical component is a semiconductor laser.6. The method as claimed in claim 1 , wherein the temperature control device has a structure in which a plurality of peltier elements are sandwiched between an upper plate and a lower plate.7. The method as claimed in claim 2 , wherein a solder is made of SnAgCu-based material.8. The method as claimed in further ...

QUANTUM CASCADE LASER SOURCE WITH ULTRABROADBAND SPECTRAL COVERAGE

A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions. 1. A quantum cascade laser (QCL) , comprising:a first gain region configured to output a first optical mode;a second gain region configured to output a second optical mode; andat least one spacer layer disposed between the first gain region and the second gain region, the at least one spacer layer having sufficient dimension such that the first optical mode and the second optical mode do not appreciably overlap.2. The QCL of claim 1 , wherein the at least one spacer layer comprises InP.3. (canceled)4. The QCL of claim 1 , comprising at least two groups of identical gain stages spatially separated in order to reduce an intracavity power density experienced by at least one of the identical gain stages resulting in a reduction of gain saturation.5. The QCL of claim 1 , wherein the first gain region comprises a first plurality of heterogeneous gain stages claim 1 , each of the first plurality of heterogeneous gain stages configured to provide gain in a first energy range claim 1 , and wherein the second gain region comprises a second plurality of heterogeneous gain stages claim 1 , each of the second plurality of heterogeneous gain stages configured to provide gain in a second energy range.6. The QCL of claim 5 , ...

System for managing thermal conduction on optical devices

The system includes an optical device having both optical components and one or more waveguides on a base. The system also includes a heat sink and a zone definer contacting the base and the heat sink. The zone definer is configured to conduct thermal energy from the optical device to the heat sink. The zone definer includes a thermal insulator having a lower thermal conductivity than both the heat sink and the base. The zone definer also includes a thermal via that extends through the thermal insulator. A via medium is positioned in the thermal via and has a higher thermal conductivity than the thermal insulator. The via medium is located under one of the optical components.

Small packaged tunable laser assembly

A tunable laser configured in a small package coupled to a printed circuit board. The tunable laser includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. An optical output interface is positioned at the second end of the housing and configured to transmit a continuous wave optical beam. A beam splitter and photodiode is disposed in the path of the laser beam for determining the emitted intensity of the laser beam, and an optical isolator is positioned downstream of the beam splitter to prevent the incoming light from the beam splitter from reflecting back though the beam splitter and into the cavity of the laser.

Semiconductor laser device

A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.

SEMICONDUCTOR LASER WITH CATHODE METAL LAYER DISPOSED IN TRENCH REGION

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction. 1. A laser diode , comprising:a substrate;a junction layer disposed on the substrate, the junction layer forming a quantum well of the laser diode;a junction surface comprising at least one channel that extends through the junction layer to the substrate, the at least one channel defining an anode region and a cathode region;a cathode electrical junction disposed on the junction surface at the cathode region;an anode electrical junction disposed on the junction surface and coupled to the junction layer at the anode region; anda cathode metal layer disposed in at least a trench region of the at least one channel, the cathode metal layer coupling the substrate to the cathode electrical junction.2. The laser diode of claim 1 , wherein the trench region is elongated along a laser output direction of the laser diode.3. The laser diode of claim 2 , wherein the trench region extends substantially from an emission edge to an opposing edge of the laser diode.4. The laser diode of claim 1 , wherein the at least one channel is elongated along a laser output direction of the laser diode.5. The laser diode of claim 1 , wherein the at least one channel comprises two channels claim 1 , wherein the anode region is disposed between the two channels.6. The laser diode of claim 5 , ...

LASER CRYSTAL COMPONENTS JOINED WITH THERMAL MANAGEMENT DEVICES

A method for preparing a surface of a YAG crystal for thermal bonding includes performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal. Also, a micro-chip device having a YAG crystal whose surface is prepared with the above disclosed method is provided and a device for forming a metallization pattern on a surface of the YAG crystal is provided. 18-. (canceled)9. A micro-chip laser device comprising:a pump laser diode configured to emit a laser beam; performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and', 'joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal;, 'a YAG crystal having a surface prepared by'}wherein the YAG crystal is configured to produce pulsed light output; andwherein the thermal management device is thermally coupled to the pump laser diode and the YAG crystal and is configured to dissipate heat from the pump laser diode and the YAG crystal.10. The device of claim 9 , wherein the YAG crystal comprises at least two dielectric interference coatings configured to provide high laser damage resistance.11. The device of claim 10 , wherein the two dielectric interference coatings comprises an anti-reflection dielectric coating and a dichroic dielectric coating.12. The device of claim 10 , wherein the dichroic dielectric coating comprises a high reflection portion and an anti-reflection portion so as to reflect some wavelengths of ...

GAIN MEDIUM WITH IMPROVED THERMAL CHARACTERISTICS

A laser assembly () that generates a beam () includes a gain medium () having a first facet region () that includes a first facet (), a second facet region () that includes a second facet (), and an intermediate region () that separates and connects the facet regions () (). Additionally, the gain medium () includes a substrate layer () and a core layer () that extend between the facets () (). The gain medium () is designed so that when current is directed to the gain medium, (i) current flows through the core layer () in the intermediate region () to generate the beam (), and (ii) current does not flow through or flows at a reduced rate through the core layer () in one or both facet regions () (). 1. A laser assembly that generates a beam when current is directed to the laser assembly , the laser assembly comprising:a gain medium including (i) a first facet region that includes a first facet, (ii) a second facet region that includes a second facet, and (iii) an intermediate region that separates the facet regions and connects the facet regions; the gain medium having a substrate layer, and a core layer that extends between the facets; wherein the gain medium is designed so that when current is directed to the gain medium, current flows through the core layer in the intermediate region to generate the beam, and current does not flow through the core layer in the first facet region; wherein the gain medium is one of a Quantum Cascade gain medium and an Interband Cascade gain medium.2. The laser assembly of wherein the gain medium is designed so that when current is directed to the gain medium claim 1 , current does not flow through the core layer in second facet region.3. The laser assembly of wherein the gain medium includes a cladding layer that is adjacent to the core layer and that extends between the facets claim 2 , wherein the cladding layer has a higher electrical conductivity in the intermediate region than in the facet regions.4. The laser assembly of ...

LASER DIODE ARRAY AND LASER DIODE UNIT

A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another. 1. A laser diode array comprising:a heat dissipator;a plurality of submounts disposed independently of one another on the heat dissipator; anda plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.2. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are arranged at equal intervals.3. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are arranged at intervals of about 2 mm to about 10 mm both inclusive.4. The laser diode array according to claim 1 , wherein a half-width of a superimposition of wavelength spectra of the plurality of laser diode devices is about 2 nm or more.5. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are electrically connected to one another in series.6. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are electrically connected to one another in parallel.7. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are configured of the same material-based devices.8. The laser diode array according to claim 1 , wherein the laser diode devices are made of an AlGaInP-based material.9. The laser diode array according to claim 1 , wherein the laser diode devices are made of a GaN-based material.10. The laser diode array according to claim 1 , wherein the plurality of laser diode devices include two ...

Epitaxial-Side-Down Mounted High-Power Semiconductor Lasers

A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder. 1. A laser apparatus configured for epitaxial-side-down mounting on a heat sink , comprising:a semiconductor laser structure formed on a substrate and at least one post also formed on the substrate, the post being separated from the laser structure by at least one channel therebetween, a maximum height of the at least one post being approximately the same as a maximum height of the laser structure, the laser apparatus being configured to be mounted epitaxial-side-down on the heat sink by means of solder applied to the laser structure and the at least one post;wherein the at least one channel between the post and the laser structure provides an adequate initial empty volume for the volume of solder displaced by the ridge and post to occupy and flow through without contacting a sidewall of the laser structure.2. The laser apparatus according to claim 1 , wherein the laser structure and all of the at least one posts are coated with a heat-spreading material layer to form a coated laser structure and coated posts claim 1 , a thickness of the heat-spreading material being configured such that all of the at least one coated posts and the coated laser ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer. 1. A semiconductor laser device comprising:a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion,wherein the emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base,wherein the first conductive layer has an external connection region,wherein the second conductive layer is formed in a different region from the external connection region of the first conductive layer,wherein a thickness of the second conductive layer is greater than a thickness of the first conductive layer,wherein the emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer,wherein the emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer, andwherein the emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end ...

Semiconductor laser assembly and method for producing a semiconductor laser assembly

A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Housing and Method for Producing a Housing

A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed. 115-. (canceled)16. A housing for an optoelectronic semiconductor component , the housing comprising:a housing body having a mounting plane and a leadframe having a first connection conductor and a second connection conductor;wherein the housing body molds around the leadframe in regions; andwherein the leadframe has a main extension plane running obliquely or perpendicularly with respect to the mounting plane.17. The housing according to claim 16 , wherein the housing body has a first main face claim 16 , wherein the first connection conductor and the second connection conductor project from the housing body on a portion of the first main face claim 16 , and wherein a region of the first connection conductor that projects from the housing body on the portion of the first main face is provided for fixing a semiconductor chip.18. The housing according to claim 17 , wherein the first main face runs along the mounting plane.19. The housing according to claim 16 , wherein a side face of the first connection conductor runs along the main extension plane and is provided for fixing a semiconductor chip.20. The housing according to claim 16 , wherein the main extension plane of the leadframe is embodied completely in planar fashion.21. The housing according to claim 16 , wherein the leadframe has a thickness of at least 0.5 mm.22. The housing according to claim 16 , wherein the housing body comprises a supporting element having a bearing face claim 16 , wherein the mounting plane is ...

LASER DIODE DEVICES

A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing. 1. A laser diode device comprising:a housing having a mounting area in a cavity of the housing,at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation,at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, anda deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element,wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element,the covering element connects to the housing, andthe covering element tightly closes the housing.2. The laser diode device according to claim 1 , wherein the at least one laser diode chip is not potted.3. The laser diode device according to claim 1 , wherein the covering element tightly doses the housing such that a leakage rate is at most 5*10̂(−8)(Pa*m̂3)/s.4. The laser diode device according to claim 1 , wherein ...

MULTIBEAM ARRAY OF TOP EMITTING VCSEL ELEMENTS

A top emitting VCSEL array may be coupled to a separate heat spreading superstrate that may be positioned above the apertures of the array and that may be able to transmit the emitted beams through the heat spreading superstrate. The VCSEL devices in the array may be controlled by an electrical connection to a pattern of conductive elements positioned in close contact with, but electrically isolated from, the heat spreading superstrate. The conductive elements may electrically control one or more of the VCSEL devices to enable sectional control of the light output. The elements may also be arraigned in a ground-signal-ground or coplanar waveguide configuration to improve the frequency response of the array. 1. A top emitting VCSEL array device , comprising:a grounded substrate;one or more grounding pads electrically connected to the grounded substrate; anda plurality of VCSEL devices, each VCSEL device among the plurality of VCSEL devices configured to include a mesa on top of the grounded substrate, each mesa being configured to include a lower mirror formed on top of and in contact with the grounded substrate, a first region formed on top of and in contact with the lower mirror, an upper and an active region configured to generate light positioned between the first region and the upper mirror, each VCSEL device further including a first metal contact pad formed over at least a portion of and in electrical contact with the upper mirror, an aperture formed on the upper mirror to emit the light generated by the active region, a mesa heat sink structure formed over at least a portion of the first metal contact pad and configured to increase a mass of the mesa, a conductive pad formed above and in electrical contact with at least a portion of the heat sink structure, a dielectric layer formed over the conductive pad, and a heat spreading substrate placed over the dielectric layer and electrically isolated from but in thermal contact with the conductive pad.2. The array ...

Addressable illuminator with eye-safety circuitry

An addressable illuminator is disclosed consisting of multiple optical sources used in combination with an electrical circuit so that different combinations of the optical sources can be energized without exceeding eye-safety limits. Operation of multiple optical sources may be proximate, which is eye-safe, regardless of the number of or which ones of the optical sources are energized and regardless of the position of observers. An illuminator with multiple optical sources remains eye-safe when there are single-point electrical failures, such as short circuits, in the driving circuit. Monitoring or a feedback loop for the output power is not required or necessary to control the distance of an observer in order to be eye-safe.

SEMICONDUCTOR LASER DEVICE

A semiconductor laser bar is mounted onto a liquid-cooled heat sink A molybdenum reinforcement member is fixed onto the surface opposite to the surface on which the semiconductor laser module is mounted. The molybdenum has a linear expansion coefficient less than that of the heat sink Sub-mounts are preferably made of a Cu—W alloy, more preferably of the reinforcement member molybdenum. In this case, the stresses that are imposed on the heat sink when being expanded or contracted can cancel each other out. 1. A semiconductor laser device comprising:a semiconductor laser bar having a plurality of light emission points arrayed on a straight line;a plate-shaped liquid-cooled heat sink in which a fluid passage is formed and which has a thickness equal to or less than 3 mm;a first sub-mount which is fixed onto one surface of the semiconductor laser bar, made of a material having a linear expansion coefficient less than that of the heat sink, and fixed onto the heat sink;a second sub-mount which is fixed onto the other surface of the semiconductor laser bar and made of a material having a linear expansion coefficient less than that of the heat sink; anda molybdenum reinforcement member fixed onto a position on a surface of the heat sink opposite to the surface on which the first sub-mount is mounted, the position being opposed to the first sub-mount, the molybdenum reinforcement member having a linear expansion coefficient less than that of the heat sink and a thickness of 0.1 to 0.5 mm.2. A semiconductor laser device having a plurality of semiconductor laser units stacked in layers , the semiconductor laser device characterized in that the individual semiconductor laser unit comprises:a plate-shaped liquid-cooled heat sink in which a fluid passage is formed;a semiconductor laser module made up of a semiconductor laser bar and fixed onto one surface side of the heat sink; anda molybdenum reinforcement member fixed onto a position on the other surface side of the heat sink ...

FLEXIBLE LED DEVICE AND METHOD OF MAKING

Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer. 1. A flexible article comprising:a flexible polymeric dielectric layer having first and second major surfaces, the first surface having a first conductive layer thereon and having at least one cavity therein, the second major surface optionally having a second conductive layer thereon, the at least one cavity defined by one or more walls and a floor, the at least one cavity having a third conductive layer on at least a portion of its walls and floor; the third conductive layer configured to directly or indirectly support a light emitting semiconductor device,wherein the first conductive layer is electrically conductive and the second and third conductive layers are thermally conductive, andwherein there is no direct connection between the second major surface of the dielectric layer and the third conductive layer.2. The article of wherein the third conductive layer is electrically conductive and is electrically connected to the first conductive layer.3. The article of wherein the first electrically conductive layer comprises a circuit.4. The article of wherein the second major surface has a second conductive layer thereon.5. The article of wherein the second conductive layer is electrically conductive and comprises an electrical circuit.6. The article of wherein the second conductive layer comprises a thermally conductive adhesive.71. The article of wherein the first major surface of the dielectric layer has an array of cavities therein and at least a portion of the cavities are configured to support ...

Semiconductor light emitting device and light emitting apparatus

A semiconductor light emitting device includes a nitride semiconductor layer, an insulating film, a first electrode, and a second electrode which are provided on a substrate. The nitride semiconductor layer includes a second cladding layer having a stripe-shaped ridge. The insulating film is provided on a portion of the second cladding layer including the at least one ridge. The first electrode is provided to contact the upper surface of the ridge. The second electrode is provided to contact the upper surface of the first electrode, the upper surface of the insulating film, and a portion of the second cladding layer exposed from the insulating film.

Light source apparatus and lighting apparatus

A laser lighting module includes a base part, a laser diode which is a blue laser device, a substrate with which the laser diode is in contact, a ceramic phosphor which reflects light entering from the laser diode to thereby change a direction of the light and is excited by the light to generate yellow fluorescence, and a lens for adjusting luminous intensity distribution of light emitted from the ceramic phosphor. The substrate is formed of a material which is thin and has excellent thermal conductivity, and is in surface contact with the laser diode and the base part. In the laser lighting module, since the substrate serves as a device heat radiator, it is possible to easily remove the heat generated by the laser diode.

Silicon-Based Lens Support Structure And Cooling Package With Passive Alignment For Compact Heat-Generating Devices

A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Interposer Configuration With Thermally Isolated Regions For Temperature-Sensitive Opto-Electronic Components

An interposer (support substrate) for an opto-electronic assembly is formed to include a thermally-isolated region where temperature-sensitive devices (such as, for example, laser diodes) may be positioned and operate independent of temperature fluctuations in other areas of the assembly. The thermal isolation is achieved by forming a boundary of dielectric material through the thickness of the interposer, the periphery of the dielectric defining the boundary between the thermally isolated region and the remainder of the assembly. A thermo-electric cooler can be used in conjunction with the temperature-sensitive device(s) to stabilize the operation of these devices. 1. An arrangement for supporting components of an opto-electronic assembly comprising:an interposer substrate for supporting a plurality of opto-electronic components that includes at least one temperature-sensitive opto-electronic component, the interposer substrate including a dielectric boundary strip formed through the thickness thereof and configured to define a region of the interposer substrate that is thermally isolated from the remainder of the assembly, with the at least one temperature-sensitive opto-electronic component located within the thermally isolated region.2. The arrangement as defined in wherein the interposer substrate comprises silicon.3. The arrangement as defined in wherein the dielectric boundary strip comprises silicon dioxide.4. The arrangement as defined in wherein the interposer substrate comprises a glass material.5. The arrangement as defined in wherein the arrangement further comprises a thermo-electric cooler element disposed in the thermally isolated region with the at least one temperature-sensitive opto-electronic component.6. The arrangement as defined in wherein the thermo-electric cooler is disposed above and coupled to the at least one temperature-sensitive opto-electronic component.7. The arrangement as defined in wherein the thermo-electric cooler is disposed ...

Arrangement of Optical Semiconductor Elements

An arrangement with a multiplicity of optical semiconductor elements is disclosed. The semiconductor elements are respectively clamped against a semiconductor element carrier by way of a spring element. Additionally lying against the spring element is an optical element assigned to a respective semiconductor element, the spring element in this case being configured in such a way that it defines a fixed distance between the semiconductor element and the optical element. 1. An arrangement with at least one optical semiconductor element , which has a semiconductor housing fixed on a semiconductor element carrier , wherein the semiconductor housing is supported on the semiconductor element carrier and , for fixing , is loaded by way of a spring element with a spring force in the direction of the semiconductor element carrier , an optical element that is assigned to the semiconductor element being in operative connection with the spring element and the spring element being configured in such a way that it fixes a distance between the optical element and the semiconductor element.2. The arrangement as claimed in claim 1 , the spring element having a mechanically stiff element portion claim 1 , for fixing the distance between the optical element and the semiconductor element claim 1 , and a resilient element portion claim 1 , with which the semiconductor housing is loaded with the spring force by way of the mechanically stiff element portion.3. The arrangement as claimed in claim 1 , a multiplicity of semiconductor elements being provided and semiconductor elements of at least a subset of all the semiconductor elements being respectively assigned an optical element claim 1 , a respective optical element being secured on an element carrier connected to the semiconductor element carrier.4. The arrangement as claimed in claim 3 , the spring element being supported on the element carrier.5. The arrangement as claimed in claim 1 , the spring element being formed as a spring ...

Photonic package architecture

A photonic package includes a photonic device having a photon emitter on the front side of the die. A beam of photons from the photon emitter passing from the front side to the backside of the die, passes through the substrate material of the die which is substantially transparent to the beam of photons, to the backside of the die. Other embodiments are also described.

DEVICE FOR MANAGING HEAT IN AN OPTICAL ELEMENT, AND RELATED HEAT-MANAGEMENT METHOD

A device is provided for managing heat in an optical element, including: the optical element; a material at a reference temperature; and an intermediate gas layer located directly between the reference-temperature material and the optical element, the intermediate gas layer being located on at least a portion of the thickness thereof in a temporary diffusion state defined by a thickness of the intermediate gas layer, such that the ratio of the mean free path of the gas molecules in the intermediate gas layer over said thickness is between 0.1 and 10. The thickness of the intermediate gas layer is between 10 μm and 5 mm. A corresponding heat-management method is implemented in the device for managing the temperature of an optical element. 2. The device according to claim 1 , characterized in that the optical element comprises at least one element from:a gain medium;a non-linear frequency conversion medium;a multi-refractive medium;a medium acting on the polarization;a dioptric element;a catoptric element; ora semiconducting medium.3. The device according to claim 1 , characterized in that the intermediate gas layer is confined in a closed space.4. The device according to claim 1 , characterized in that the material at a reference temperature has a temperature below 200 K claim 1 , and in that the optical element is a solid gain medium cooled by the material at a reference temperature.5. The device according to claim 1 , characterized in that the intermediate gas layer is constituted by helium to at least 90%.6. The device according to claim 1 , characterized in that it comprises at least one control means from:a control means of the thickness of the intermediate gas layer;a control means of the pressure in the intermediate gas layer;a control means of the temperature of the material at a reference temperature.7. The device according to claim 6 , characterized in that it comprises at least one control means for locally controlling the thickness of the intermediate gas ...

LASER DEVICE FOR EMITTING WAVES IN THE TERAHERTZ RANGE

A laser device for emitting waves in a frequency range belonging to the terahertz range, includes the following, in combination: a wave guide extending longitudinally along an axis A-A′; a superconducting coil arranged coaxially to the wave guide and arranged at a first end of the wave guide; a p-Ge p-doped germanium crystal arranged inside the coil such that the turns of the superconducting coil at least partially surround the p-Ge crystal; a cooling device containing a coolant, the superconducting coil and the p-Ge crystal being arranged in the cooling device, and the wave guide partially extending outside the cooling device; and removing the coolant from the wave guide. 1. A laser device for emission of waves in a frequency range in the terahertz range , the laser device comprising:a waveguide extending longitudinally according to an axis A-A′, the waveguide comprising a proximal end and a distal end;a superconducting coil coaxial to the waveguide and arranged at the level of the proximal end of the waveguide;a p-Ge crystal of p-doped germanium arranged inside the coil such that the windings of the superconducting coil at least partially enclose the p-Ge crystal;cooling means containing coolant in the liquid state, the superconducting coil and the p-Ge crystal being arranged in the cooling means and the waveguide extending partially to the exterior of the cooling means;means for eliminating coolant in the liquid state in the waveguide, the means comprising two windows transparent to light radiation in the terahertz range at the level of the proximal and distal ends of the waveguide.2. The device as claimed in claim 1 , wherein the means for eliminating coolant in the liquid state in the waveguide replace it with coolant in the gaseous state.3. The laser device as claimed in claim 2 , wherein the means for eliminating coolant in the liquid state in the waveguide also comprise a heating element in thermal contact with the waveguide to prevent coolant condensation.4 ...

OPTICAL MODULE WITH ENHANCED ROBUSTNESS OF TEMPERATURE CONTROLLING DEVICE

An optical assembly (OSA) that installs a semiconductor optical device mounted on a thermo-electric controller (TEC) is disclosed. The TEC in the upper plate thereof is mechanically connected to the housing, or to the block stiffly fixed to the housing by a bridge made of stiff material. The bridge preferably extends along the optical axis to show enhanced durability against the impact caused by an external ferrule abutting against the receptacle of the OSA. 1. An optical sub-assembly , comprising:a housing with a side wall and another side wall facing said side wall, said another side wall providing an insulating member;a thermo-electric controller (TEC) installed in said housing, said TEC mounting a semiconductor optical device thereon;a receptacle provided in said side wall of said housing, said receptacle receiving an external optical connector with a ferrule, wherein said ferrule abutting against a deep end of said receptacle to cause an impact to said TEC; anda bridge mechanically connecting a top portion of said TEC to said insulating member in said another side wall of said housing, said bridge being made of ceramics,wherein said bridge extends along an optical axis of said optical sub-assembly.2. The optical sub-assembly of claim 1 ,wherein said TEC comprises a top plate, a bottom plate and a plurality of thermo-controlling elements,wherein said top portion is one of said top plate of said TEC and a top surface of a member mounted on said top plate of said TEC.3. The optical sub-assembly of claim 2 ,wherein said member is a carrier mounted on said top plate of said TEC.48.-. (canceled)9. The optical sub-assembly of claim 1 ,{'sub': 2', '3, 'wherein said ceramics is one of aluminum oxide (AlO) and aluminum nitride (AlN).'}10. The optical sub-assembly of claim 1 ,wherein said bridge provides one of a micro-strip line, a co-planar line, and a grounded micro-strip line.11. The optical sub-assembly of claim 1 ,wherein said bridge has a thickness of at least 0.1 ...

OPTICAL MODULE AND METHOD OF CONTROLLING OPTICAL MODULE

Provided is an optical module in which a temperature of a semiconductor element to be subjected to temperature control is controlled to fall within a desired operating temperature range regardless of whether an environmental temperature is outside or inside the operating temperature range of the semiconductor element, and which is stably operated with low power consumption. A control section determines, based on the environmental temperature having a temperature range of from a first temperature to a second temperature, a target temperature from a predetermined operating temperature range of from a third temperature to a fourth temperature. The control unit , an ATC circuit , a TEC control IC , and a TEC control the temperature of a laser module to become the target temperature. The first temperature is lower than the third temperature, and the second temperature is higher than the fourth temperature. 1. An optical module , comprising:a temperature sensor for detecting an environmental temperature having a temperature range of from a first temperature to a second temperature;a semiconductor element to be subjected to temperature control;a target temperature determining unit that determines, based on a temperature detected by the temperature sensor, a target temperature from an operating temperature range that is a predetermined temperature range of from a third temperature to a fourth temperature; anda temperature controlling unit that controls a temperature of the semiconductor element to become the target temperature,wherein the first temperature is lower than the third temperature, andwherein the second temperature is higher than the fourth temperature.2. The optical module according to claim 1 , wherein the target temperature determining unit determines the target temperature in a manner that the target temperature is increased as the detected environmental temperature becomes higher.3. The optical module according to claim 2 , wherein the temperature ...

Bonding method and production method

A bonding method of the present invention is a method of bonding two members (A and B) to each other with use of an Au—Sn solder. According to the bonding method of the present invention, after the bonding, an Au—Sn solder (S′) has weight percent of Sn which is not less than 38.0 wt % but not more than 82.3 wt %.

Light source, and optical coherence tomography module

An optical module includes a light source. The light source can be a swept wavelength light source, and optical module includes a wavemeter. The wavemeter includes a wavemeter tap capable of directing a wavemeter portion of light produced by the light source away from a main beam, a wavelength selective filter arranged to receive the wavemeter portion, a first wavemeter detector arranged to measure a transmitted radiation intensity of radiation transmitted through the filter, and a second wavemeter detector arranged to measure a non-transmitted radiation intensity of radiation not transmitted through but reflected by the filter. In addition, an optical coherence tomography apparatus includes the optical module.

Amplifying apparatus and amplifying medium

An amplifying apparatus includes an optical fiber that includes a wound portion doped with a rare earth element and three-dimensionally wound, holes being formed in cladding of the optical fiber and surrounding a core of the optical fiber, the optical fiber transmitting signal light injected thereinto; a thermally conductive member in which the wound portion of the optical fiber embedded, the thermally conductive member having thermal conductivity; a light source that emits excitation light; an injecting unit that injects the excitation light emitted by the light source, into the optical fiber; and a temperature adjusting unit that includes a thermal coupling unit thermally connected to the light source and the thermally conductive member, the temperature adjusting unit adjusting a temperature of the thermal coupling unit.

COMPACT HIGH-SPECTRAL-RADIANCE FLUORESCENT LIGHT SOURCE INCLUDING A PARABOLIC MIRROR

A pumped fluorescent light source includes a parabolic mirror that is positioned to focus pumping light from one or more pump sources on a fluorescent body. The resulting assembly provides for heat collection from a back surface of the light source for both the fluorescent body and the pumping sources in a compact package that may be hermetically sealed. The parabolic mirror has reflective surfaces disposed outside of a collection area of an output beam of the light sources, so that the collection area is not obstructed by the parabolic mirror. The light source also includes a collecting lens for collecting the light emitted by the body. The parabolic mirror focuses the stimulus light on the fluorescent body to stimulate emission. An additional parabolic mirror may be included behind the fluorescent body to focus the fluorescent emissions that do not directly enter the collection area at a point of collection. 1. A method of generating light , comprising:providing a body formed from a material doped to have a fluorescent property when stimulated at a stimulus wavelength;stimulating the body with one or more light sources that produce a corresponding one or more stimulus beams having a wavelength substantially equal to the stimulus wavelength, wherein the one or more stimulus beams are directed at the body with a parabolic mirror to cause the body to emit light in an emission band; andcollecting and collimating at least a portion of the light emitted by the body by a collimating device to produce a collimated output beam.2. The method of claim 1 , wherein the parabolic mirror includes a central aperture passing therethrough for admitting the portion of the light emitted by the body claim 1 , and wherein the collecting is performed by the collimating device positioned to collect the at least a portion of the light emitted by the body at the central aperture of the parabolic mirror.3. The method of claim 2 , wherein the one or more light sources are multiple light ...

Fiber management cartridge

Some embodiments may include a fiber management cartridge, comprising: a plurality of sheets of material arranged in a stack, each sheet including: a first section to fasten to a surface; and a second section to make movement relative to the surface when the first section is fastened to the surface, the second section to hold one or more loops of one or more optical fibers, respectively, of a fiber laser. Other embodiments may be disclosed and/or claimed.

OPTICAL MODULE AND METHOD OF MANUFACTURING OPTICAL MODULE

An optical module includes an optical semiconductor device and a stem including a lead terminal configured to perform at least one of transmitting an electric signal to the optical semiconductor device or transmitting an electric signal output from the optical semiconductor device. The optical module also includes a substrate having a ground layer, a first opening through which the lead terminal passes, and a connecting portion configured to electrically connect the stem and the ground layer. The connecting portion is formed on one of an edge portion of the substrate and a surface of the substrate on a side on which the substrate is arranged on the stem. 1. An optical module , comprising:an optical semiconductor device;a stem comprising a lead terminal configured to perform at least one of transmitting an electric signal to the optical semiconductor device or transmitting an electric signal output from the optical semiconductor device; anda substrate comprising a ground layer, a first opening through which the lead terminal passes, and a connecting portion configured to electrically connect the stem and the ground layer,wherein the connecting portion is formed on one of an edge portion of the substrate and a surface of the substrate on a side on which the substrate is arranged on the stem.2. The optical module according to claim 1 , wherein the connecting portion formed on the edge portion of the substrate comprises an electrode portion formed extending from the ground layer in a notch of the substrate.3. The optical module according to claim 1 , wherein the connecting portion formed on the surface of the substrate on the side on which the substrate is arranged on the stem is formed so that the ground layer is exposed at a part of an outer side of a region of the substrate at which the substrate and the stem oppose each other.4. The optical module according to claim 1 ,wherein the stem further comprises a ground pin extending from a surface of the stem on a side on ...

LASER APPARATUS AND METHOD TO RE-TUNE EMISSION WAVELENGTH OF WAVELENGTH TUNABLE LD

A laser apparatus for tuning the emission wavelength of a wavelength tunable laser diode will be described. The apparatus includes a tunable LD with heaters to tune the emission wavelength of the tunable LD, and a controller to control the power supplied to the heaters. A feature of the laser apparatus is that the controller supplies pre-emphasis power to the heaters before the supplement of the power corresponding to the re-tuned emission wavelength to accelerate the stability of the temperature of the heaters. 1. A laser apparatus , comprisinga wavelength tunable laser diode (t-LD) providing a heater; anda controller to control power supplied to the heater to re-tune an emission wavelength of the t-LD by changing the power from first power Pa to second power Pb,wherein the controller supplies pre-emphasis power Pp before supplying the second power Pb, the pre-emphasis power Pp being greater than the second power Pb when the second power Pb is greater than the first power Pa, and supplies the pre-emphasis power Pp smaller than the second power Pb when the second power Pb is smaller than the first power Pa.2. The laser apparatus of claim 1 , {'br': None, 'i': Pp=Pb+K', 'Pb−Pa, '·(),'}, 'wherein the power Pp is determined by an equation ofwhere K is a coefficient.3. The laser apparatus of claim 2 ,wherein the t-LD provides n (>1) counts of heaters each supplied with first power Pai, second power Pbi, and pre-emphasis power Ppi specific to respective heaters, {'br': None, 'i': Ppi=Pbi+Ki', 'Pbi−Pai', 'i=', 'n,, '×()1 to'}, 'wherein respective pre-emphasis power Ppi are determined by equations ofwherein Ki is specific to the i-th heater.4. The laser apparatus of claim 2 ,wherein the coefficient K depends on a difference between the first power Pa and the second power Pb.5. The laser apparatus of claim 2 ,wherein the coefficient K depends on a polarity of a difference between the first power Pa and the second power Pb.6. The laser apparatus of claim 2 ,wherein the ...

SEMICONDUCTOR LASER SOURCE

A semiconductor laser source includes a structured layer formed on a substrate made of silicon and having an upper face. The structured layer includes a passive optical component chosen from the group composed of an optical reflector and a waveguide. The component is encapsulated in silica or produced on a silica layer. At least one pad extends from a lower face of the structured layer, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer. The pad is produced entirely from silicon nitride, in order to form a thermal bridge through the structured layer. An optical amplifier is bonded directly above the passive optical component and partially to the upper face of the pad in order to dissipate the heat that it generates to the substrate made of silicon. 1. A semiconductor laser source able to emit at least one wavelength λ , said laser source comprising:a substrate made of silicon extending mainly in a plane called the “plane of the substrate”;a structured layer formed on an upper face of the substrate made of silicon and having an upper face on the opposite side to the substrate made of silicon, said structured layer comprising:a passive optical component chosen from the group composed of an optical reflector and a waveguide, said passive optical component being encapsulated in silica or produced on a silica layer; andat least one pad extending from a lower face, making direct contact with the substrate made of silicon, to an upper face flush with the upper face of the structured layer, said pad being made entirely from a material the thermal conductivity at 20° C. of which is higher than the thermal conductivity at 20° C. of silica, in order to form a thermal bridge through the structured layer; and{'sub': 'Li', 'an optical amplifier made of III-V material able, when it is supplied with power, to amplify the optical signal of wavelength λthat passes through it, said optical amplifier being bonded ...

TRANSIENT WAVELENGTH DRIFT REDUCTION IN SEMICONDUCTOR LASERS

This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods. 1. A laser assembly comprising a semiconductor laser and a drive unit for driving the semiconductor laser , a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region;', 'a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region,, 'wherein the semiconductor laser compriseswherein the drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.wherein the drive unit is configured to generate the first drive current on the basis of an input signal comprising a data signal indicative of data to be transmitted by means of the optical signal; and a drive circuit for generating the first drive current based on the data signal;', 'an averaging circuit for generating an ...

OPTICAL COMPONENT AND ITS METHOD OF MANUFACTURE, AND LIGHT EMITTING DEVICE AND ITS MEHTOD OF MANUFACTURE

An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member. 1. An optical component comprising:a support member having a through-hole;a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface;a heat dissipation member made of sapphire, and disposed below a lower most part of the support member, the heat dissipation member being thermally in contact with the support member; andat least one functional film disposed between the support member and the heat dissipation member, the at least one functional film being spaced apart from the second light-transmissive member.2. The optical component according to claim 1 , whereinthe second light transmissive member contains a phosphor which converts wavelength of light emitted from light source.3. The optical component according to claim 1 , whereinthe second light-transmissive member is made of ceramic.4. The optical component according to claim 3 , whereinthe second light-transmissive member contains a phosphor which converts wavelength of light emitted from light source.5. The optical component according to claim 1 , further comprisinga third light-transmissive member that covers the light emission face of the second light-transmissive member.6. The optical component according to claim 5 , whereinthe third light-transmissive member includes a phosphor.7. The optical component according to claim 5 , whereinthe third light-transmissive member includes a filler.8. The optical component according to claim 1 , whereina lower surface of the second ...

Mounting component, semiconductor device using same, and manufacturing method thereof

A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main sur face of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.

OPTICAL MODULE

An optical module includes a semiconductor laser element, a lens configured to collect emitted light that is emitted from the semiconductor laser element, a cap configured to hold the lens and hermetically seal the semiconductor laser element, a monitor light-receiving element configured to receive backlight of the semiconductor laser element, a transmission plate arranged between the semiconductor laser element and the monitor light-receiving element and configured to attenuate the backlight according to decrease in a temperature around the cap so as to cause the backlight to enter the monitor light-receiving element, and a control unit configured to control an injection current of the semiconductor laser element such that an output of the monitor light-receiving element is kept at a constant level. 1. An optical module comprising:a semiconductor laser element;a thermoelectric cooler configured to controls the temperature of the semiconductor laser element at a constant level;a lens configured to collect emitted light that is emitted from the semiconductor laser element;a stem, the thermoelectric cooler is fixed to the stem;a metal post fixed to the stem;a cap configured to hold the lens and hermetically seal the semiconductor laser element, the cap is fixed to the stem;a monitor light-receiving element configured to receive backlight of the semiconductor laser element;a transmission plate arranged between the semiconductor laser element and the monitor light-receiving element and configured to attenuate the backlight according to decrease in a temperature of the transmission plate so as to cause the backlight to enter the monitor light-receiving element, the transmission plate is away from both the semiconductor laser element and the monitor light-receiving element, the transmission plate is fixed to the metal post;a controller configured to control an injection current of the semiconductor laser element such that an output of the monitor light-receiving element ...

OPTICAL FREQUENCY COMB SETUP AND USE OF AN EXTERNAL CAVITY FOR DISPERSION COMPENSATION AND FREQUENCY TUNING

An optical frequency comb setup including a semiconductor cascade laser drivable by a laser driver, emitting a laser beam through an end facet of the semiconductor cascade laser with a frequency comb with at least two given individual emission frequencies, repetition frequency, carrier envelope offset frequency shows improved comb stability and/or comb formation and/or comb bandwidth. This is achieved by an external cavity added outside of the cavity of the semiconductor cascade laser, having a reflective element with a mirror surface reflecting the at least two individual emission frequencies being arranged in a relative distance to the end facet allowing to adapt repetition frequency and/or carrier envelope offset frequency and/or the dispersion seen by the light in the optical frequency comb setup. 124-. (canceled)25. An optical frequency comb setup comprising a semiconductor cascade laser drivable by a laser driver , emitting a laser beam through an end facet of the semiconductor cascade laser with a frequency comb with at least two given individual emission frequencies , repetition frequency , carrier envelope offset frequency ,{'b': 110', '1, 'wherein an external cavity is added outside of a cavity of the semiconductor cascade laser, comprising a reflective element with a mirror surface reflecting the given at least two individual emission frequencies being arranged in a relative distance (d) to the end facet () allowing to adapt repetition frequency (frep) and/or carrier envelope offset frequency (fceo) and/or the dispersion seen by the light in the optical frequency comb setup ().'}26. The optical frequency comb setup according to claim 25 , wherein the semiconductor cascade laser and/or the reflective element are arranged in a linear translation mechanism such that the relative distance between the end facet and the mirror surface is adjustable by either movement of the reflective element fixed by holding means or movement of the semiconductor cascade laser ...

LOW COST OPTICAL PUMP LASER PACKAGE

Laser diode packages include a rigid thermally conductive base member that includes a base member surface situated to support at least one laser diode assembly, at least one electrode standoff secured to the base member surface that has at least one electrical lead having a first end and a second end with the first end secured to a lead surface of the electrode standoff, and a lid member that includes a lid portion and a plurality of side portions extending from the lid portion and situated to be secured to the base member so as to define sides of the laser diode package, wherein at least one of the side portions includes a lead aperture situated to receive the second end of the secured electrical lead that is insertable through the lead aperture so that the lid member extends over the base member to enclose the laser diode package. 1. A laser diode package , comprising:a first base member and at least one additional base member, each base member comprising at least one laser diode assembly including a plurality of laser diodes;at least one first electrode standoff secured to the first base member, the at least one first electrode standoff having at least one external electrical lead extending from an interior region of the laser diode package to a position outside the laser diode package;an optical output terminal secured to the first base member, the optical output terminal including an optical fiber optically coupled to the interior region of the laser diode package to receive laser beams emitted from the at least one laser diode assembly of the first base member; andat least one additional electrode standoff coupled to the at least one additional base member, the at least one additional electrode standoff configured to support an internal electrical lead electrically coupled within the interior region of the laser diode package to the at least one external electrical lead coupled to the at least one first electrode standoff2. The laser diode package of claim 1 , ...

METHOD OF EVALUATING INITIAL PARAMETERS AND TARGET VALUES FOR FEEDBACK CONTROL LOOP OF WAVELENGTH TUNABLE SYSTEM

A method of determining initial parameters and target values for tuning an emission wavelength of a wavelength tunable laser capable of emitting laser light in a substantial wavelength range is disclosed. The method iterates an evaluation of initial parameters and target values at target wavelengths in a preset order. The evaluation includes steps of supplying empirically obtained parameters to the t-LD, confirming whether the t-LD generates an optical beams, determining the initial parameters and the target values by carrying out feedback loops of the AFC and the APC when the t-LD generates the optical beam, or shifting the wavelength range so as to exclude the current target wavelength when the t-LD generates no optical beam. 1. A method of ranking a wavelength tunable laser (t-LD) that provides a sampled grating distributed feedback (SG-DFB) region , a chirped sampled grating distributed feedback reflector (CSG-DBR) region , and a semiconductor optical amplifier (SOA) region , the t-LD being mounted on a thermo-electric cooler (TEC) that varies a temperature of the t-LD , the CSG-DBR region providing a heater that varies a temperature of the CSG-DBR region , the t-LD emitting laser light whose wavelength being to be discretely tunable within a wavelength range by setting parameters in the t-LD , the SG-DFB region having an optical gain that shows a maximum in a center of the wavelength range and becomes relatively smaller in peripheries of the wavelength range , the method comprising steps of:driving the t-LD nearby a shortest wavelength and nearby a longest wavelength within the wavelength range by setting parameters that are empirically determined;confirming whether the t-LD generates an optical beam whose wavelength is around the shortest wavelength and the longest wavelength in the wavelength range with and power is around a designed power, degrading a rank of the t-LD, and', 'iterating a step of driving the t-LD at a wavelength next to the shortest ...

Applications, Methods and Systems for a Laser Deliver Addressable Array

There is provided assemblies for combining a group of laser sources into a combined laser beam. There is further provided a blue diode laser array that combines the laser beams from an assembly of blue laser diodes. There are provided laser processing operations and applications using the combined blue laser beams from the laser diode arrays and modules.

COOLING SYSTEM, RESERVOIR UNIT AND CARTRIDGE, AS WELL AS SOLID-STATE LASER OSCILLATOR SYSTEM PROVIDED WITH THE SAME

A reservoir unit which is included as an element along a circulation path of a cooling system includes a cartridge and a cartridge loading unit which are configured to be removable from each other. The cartridge includes a reservoir chamber that stores a circulating liquid, and a connection portion in fluid communication with the reservoir chamber. The cartridge loading unit includes a connection receiving portion, to which the connection portion is connected, and a connection port. When the cartridge and the cartridge loading unit are attached to each other, the connection portion, the connection receiving portion and the connection port form a feed path that allows feeding the circulating liquid to the circulation path outside, and a collection path that allows collecting the circulating liquid into the reservoir chamber. 1. A cooling system for cooling a heat source , the system comprising a circulation path in which a circulating liquid circulates , whereinthe circulation path comprises, as elements along the path, a reservoir unit that stores the circulating liquid, a pump for feeding the circulating liquid in the circulation path, a heat absorbing section where heat generated from the heat source is absorbed by a coolant which is the circulating liquid, and a heat release section where the coolant releases heat,the reservoir unit comprises a cartridge and a cartridge loading unit configured to be removable from each other,the cartridge comprises a reservoir chamber that stores the circulating liquid, and a connection portion that includes a first communication port in fluid communication with the reservoir chamber,the cartridge loading unit comprises a connection receiving portion and a connection port, wherein the connection portion is connected to the connection receiving portion, the connection receiving portion comprises a second communication port that communicates with the first communication port when the connection portion is connected to the ...

VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT

A vertical cavity surface emitting laser element includes a first light reflecting film, a nitride semiconductor layered body, a p-electrode and a second light reflecting film. The nitride semiconductor layered body includes an n-side semiconductor layer disposed on the first light reflecting film, an active layer disposed on the n-side semiconductor layer, and a p-side semiconductor layer disposed on the active layer. The p-side semiconductor layer includes a protrusion and a surface around the protrusion. The p-electrode is in contact with an upper surface of the protrusion, and extends to the surface around the protrusion. The p-electrode is light-transmissive. The second light reflecting film is disposed on the p-electrode. A height of the protrusion as measured from the surface around the protrusion is smaller than a thickness of the p-electrode. 1. A vertical cavity surface emitting laser element , comprising:a first light reflecting film; an n-side semiconductor layer disposed on or above the first light reflecting film,', 'an active layer disposed on or above the n-side semiconductor layer, and', a protrusion and', 'a surface around the protrusion;, 'a p-side semiconductor layer disposed on or above the active layer, the p-side semiconductor layer including'}], 'a nitride semiconductor layered body including'}a p-electrode in contact with an upper surface of the protrusion, and extending to the surface around the protrusion, the p-electrode being light-transmissive; anda second light reflecting film disposed on the p-electrode, wherein a height of the protrusion as measured from the surface around the protrusion is smaller than a thickness of the p-electrode.2. The vertical cavity surface emitting laser element according to claim 1 , whereinthe protrusion includes a lateral surface extending between the upper surface and the surface around the protrusion, andan angle of inclination of the lateral surface of the protrusion with respect to the surface around ...

Integrating Silicon Photonics and Laser Dies using Flip-Chip Technology

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate. 1. An optoelectronic device , comprising:An optoelectronic die having a surface, wherein a trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface;a laser die, comprising first and second electrodes and a laser output aperture, wherein the laser die is mounted in the trench and is configured to emit a laser beam, wherein the first electrode is coupled to the electrically conductive layer and wherein the laser output aperture is mechanically aligned with a waveguide that extends from the second wall; andelectrical interconnects, formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die, wherein the electrical interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.2. The device according to claim 1 , and comprising a heat sink coupled to an opposite surface of the optoelectronic die claim 1 , which is ...

Laser device

A laser device has a plurality of laser diodes; a plurality of optical elements installed corresponding to the plurality of the laser diodes; a plurality of units formed by fixing the laser diodes and the optical elements per each laser diode and installed corresponding to the plurality of the laser diodes; a converging element that converges laser beams emitted from the plurality of the laser diodes to a fiber; a housing element houses the plurality of the units and the converging element; and a thermal transfer plate performs heat dissipation of the plurality of the units. The heat resistance reducing element having a heat resistance value that is smaller than a predetermined value is installed between the thermal transfer plate and each unit or the processing for reducing the heat resistance is performed.

Method of evaluating initial parameters and target values for feedback control loop of wavelength tunable system

A method of determining initial parameters and target values for tuning an emission wavelength of a wavelength tunable laser capable of emitting laser light in a substantial wavelength range is disclosed. The method iterates an evaluation of initial parameters and target values at target wavelengths in a preset order. The evaluation includes steps of supplying empirically obtained parameters to the t-LD, confirming whether the t-LD generates an optical beams, determining the initial parameters and the target values by carrying out feedback loops of the AFC and the APC when the t-LD generates the optical beam, or shifting the wavelength range so as to exclude the current target wavelength when the t-LD generates no optical beam.

Package for mounting light-emitting device

A light-emitting device mounting package includes a substrate, a lead pin supported on the substrate, and an insulating member having a facing front surface which faces the front surface of the substrate and a facing back surface. The substrate has a first through hole and the ceramic plate has a second through hole. The lead pin has a shaft portion which penetrates the first and second through holes, a head portion provided at one end of the shaft portion, and a collar portion which extends from the shaft portion in the radial direction. The lead pin is fixed, via the collar portion, to a region of the facing back surface of the ceramic plate around an opening of the second through hole, and the ceramic plate is fixed to a region of the front surface of the substrate around an opening of the first through hole.

OPTICAL COMPONENT PACKAGING STRUCTURE, OPTICAL COMPONENT, OPTICAL MODULE, AND RELATED APPARATUS AND SYSTEM

An optical component packaging structure includes a base, a sealing cover, and a cooler. The base includes a mounting surface and a back surface that faces a direction opposite to that faced by the mounting surface. The cooler includes a cooling plate, a heat dissipation plate disposed opposite to the cooling plate, and a conductive connection body connecting the cooling plate and the heat dissipation plate. The cooling plate includes a cooling surface. The cooler is partially built in the base. The cooling plate faces a direction the same as the mounting surface. The sealing cover covers the mounting surface, and the sealing cover and the mounting surface form a sealing cavity. The cooling surface is located inside the sealing cavity. The heat dissipation plate protrudes from the back surface and is sealedly connected to the base. 1. An optical component , comprising an optical component packaging structure , wherein the optical component packaging structure comprises a base , a sealing cover , and a cooler , wherein the base comprises a mounting surface and a back surface that faces a direction opposite to that faced by the mounting surface , the cooler comprises a cooling plate , a heat dissipation plate disposed opposite to the cooling plate , and a conductive connection body connecting the cooling plate and the heat dissipation plate , the cooling plate comprises a cooling surface , the cooler is partially built in the base , the cooling plate faces a direction the same as the mounting surface , the sealing cover covers the mounting surface , the sealing cover and the mounting surface form a sealing cavity , the cooling surface is located inside the sealing cavity , and the heat dissipation plate protrudes from the back surface and is sealedly connected to the base.2. The optical component according to claim 1 , wherein the base comprises an installation through groove claim 1 , the installation through groove is provided on the mounting surface and penetrates ...

Wavelength Stabilized Diode Laser

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Brag grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability. 1. A device configured to generate at least one laser emission , the device comprising:a semiconductor gain section generating a light emission, said semiconductor gain section comprising:a rear facet having a first reflectivity; anda front facet having a second reflectivity, said rear facet and said front facet forming a first resonant cavity having a first plurality of non-lasing resonance, and receive said light emission; and', 'reflect a portion of the received light emission back into the semiconductor gain section, wherein the rear facet of the semiconductor gain section and the volume Bragg grating form a second resonant cavity, overlapping the first resonant cavity, said second resonant cavity generating a second plurality of non-lasing resonances, wherein at least one of said first plurality of non-lasing resonances and a corresponding at least one of said second plurality of non-lasing is substantially coincident, said substantially at least one coincident resonance having a modal gain sufficient to generate corresponding ones of said at least one laser emission., 'a volume Bragg grating, having a known reflectivity, configured to2. The device of claim 1 , wherein the rear facet reflectivity is fixed and the front facet reflectivity is chosen such that the modal gain of the first plurality of resonances is less than said lasing ...

SINGLE-PUMP MULTI-WAVELENGTH LASING SEMICONDUCTOR RAMAN PUMP LASER AND PUMP COMBINATION APPARATUS

A single-pump multi-wavelength lasing semiconductor Raman pump laser comprises a thermoelectric cooler arranged in a shell; a heat transition bearing platform arranged in the thermoelectric cooler; a semiconductor Raman pump laser tube core arranged on the heat transition bearing platform; and a coupling lens group , a thermistor and a backlight detector that are arranged on the heat transition bearing platform respectively. The pump laser tube core, the backlight detector, the thermistor and the thermoelectric cooler are electrically connected to pins outside a laser tube shell. A pump combination apparatus comprises a first signal transmission fiber, a pump signal combiner and a second signal transmission fiber that are sequentially connected to each other. An input terminal of the pump signal combiner is connected to an output terminal of an isolated polarization beam combiner and depolarizer. Two polarization maintaining fiber input terminals of the isolated polarization beam combiner and depolarizer are correspondingly connected to one single pump multi-wavelength lasing semiconductor Raman pump laser respectively. 1. A single pump multi-wavelength lasing semi-conductor Raman pump laser comprising a semiconductor Raman pump laser packing module , an output pigtail of the semiconductor Raman pump laser packing module , and plurality of fiber-optical Bragg gratings set on the output pigtail ,wherein the semiconductor Raman pump laser packing module comprises:a shell; a semiconductor thermoelectric cooler inside the shell; a heat transfer plummer set inside the semiconductor thermoelectric cooler; a semiconductor Raman pump laser die set on the heat transfer plummer; coupling lens, a thermistor and a backlight detector set on the heat transfer plummer and around the semiconductor Raman pump laser die, respectively,wherein the semiconductor Raman pump laser die), backlight detector, thermistor and semiconductor thermoelectric cooler are electrically connected with ...

Optical module

An optical module includes a package including a first member made of a metal material and a second member made of a non-conductive material, the second member facing the first member; a temperature controller fixed in such a manner that one end surface of the temperature controller comes into contact with a surface in a direction of the second member in the first member; a carrier made of a non-conductive material and fixed in such a manner that one end surface of the carrier comes into contact with a surface in an opposite direction to the first member in the temperature controller; and a semiconductor element disposed in either one of a direction of the first member and the opposite direction to the first member with respect to the carrier, and fixed in such a manner that one end surface of the semiconductor element comes into contact with a surface in a direction of the first member in the carrier or a surface in the opposite direction to the first member in the carrier, or in such a manner that one end surface of the semiconductor element comes into contact with a surface in the opposite direction to the carrier in a submount made of a non-conductive material and fixed in such a manner that the submount comes in contact with a surface in a direction of the first member in the carrier or a surface in the opposite direction to the first member in the carrier.

TECHNIQUES FOR ATTACHMENT AND ALIGNMENT OF OPTICAL COMPONENTS ON A THERMOELECTRIC COOLER (TEC) AND AN OPTICAL SUBASSEMBLY IMPLEMENTING SAME

In general the present disclosure is directed to a temperature control device, e.g., a TEC, that includes a top plate with at least first and second contact pads to allow for a soldering process to attach optical components to the first contact pad without causing one or more layers of the second contact pad to reflow and solidify with an uneven mounting surface. Thus, optical components such as a focus lens can be mounted to the second contact pad via, for instance, thermal epoxy. This avoids the necessity of a submount to protect the focus lens from the relatively high heat introduced during a soldering process as well as maintain the flatness of the second contact pad within tolerance so that the mounted focus lens optically aligns by virtue of its physical location/orientation with other associated optical components coupled to the first contact pad, e.g., a laser diode. 1. A temperature control device for use in an optical subassembly , the temperature control device comprising:a bottom plate to couple to a heatsink;a top plate coupled to the bottom plate via a plurality of semiconductor elements disposed therebetween, the top plate providing at least first and second contact pads for coupling optical components to the temperature control device;a first optical component coupled to the first contact pad by at least one layer of solder material forming a solder joint between the first contact pad and the first optical component; andat least a second optical component coupled to the second contact pad without a layer of soldering material forming a solder joint between the second optical component and the second contact padwherein the first and second contact pads are substantially coplanar with each other.2. The temperature control device of claim 1 , wherein the first optical component comprises a laser arrangement claim 1 , the laser arrangement including at least a laser diode claim 1 , and wherein the temperature control device further comprises a laser ...

Laser Diode With Internal Air Cooling

The invention relates to a laser diode () comprising a plurality of individual emitters (EE) constructed on a substrate (), said laser diode () comprising a housing which consists of a first contact part (), a second contact part (), an optical element (), a backplate () and two side pieces (), with a plurality of first spacers () being arranged between the substrate () and the first contact part () and a plurality of second spacers () being arranged between the individual emitters (EE) and the second contact part (). Incisions () through which a cooling medium can flow are formed between each of the individual emitters (EE). The invention also relates to a device comprising at least one laser diode () of this type. 12855213151912119813915abbou. A laser diode () comprising a plurality of individual emitters (EE) which are constructed on a substrate () and each comprise an output mirror () and a rear mirror () , the laser diode () comprising a housing which consists of a first contact part () , a second contact part () , an optical element () , a backplate () and two side pieces () , a plurality of first spacers () being arranged between the substrate () and the first contact part () and a plurality of second spacers () being arranged between the individual emitters (EE) and the second contact part () ,characterized in that{'b': '17', 'i': 'a', 'incisions () are formed between the respective individual emitters (EE), a cooling medium flowing through said incisions, and'}{'b': 22', '5, 'i': 'a', 'a prismatic aperture element () is arranged in the area of the output mirror () of the individual emitters (EE).'}229o. The laser diode () according to claim 1 , characterized in that the first spacers () are made of an electrically conductive material.32917o. The laser diode () according to claim 1 , characterized in that adjacent first spacers () form a cavity () in each case.4278a. The laser diode () according to claim 1 , characterized in that the individual emitters (EE) ...

BEAM PROJECTOR MODULE FOR PERFORMING EYE-SAFETY FUNCTION USING TEMPERATURE, AND CONTROL METHOD THEREOF

An embodiment provides a beam projector module that includes: a light source configured to output light; a substrate configured to support the light source; an optical device configured to reduce the light in terms of intensity output to a predetermined space; a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed space with the substrate and the optical device; a temperature sensor configured to measure a temperature of the frame; and a processor configured to control an output of the light source. The processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the frame exceeds a reference value. 1. A beam projector module comprising:a light source configured to output light;a substrate configured to support the light source;an optical device configured to reduce the light in terms of intensity output to a predetermined space;a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed inner space with the substrate and the optical device;a temperature sensor configured to measure a temperature of the beam projector module; anda processor configured to control an output of the light source,wherein the processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the beam project module exceeds a reference value.2. The beam projector module of claim 1 , wherein the temperature sensor is connected to the frame to measure a temperature of the frame claim 1 , and the processor is configured to operate the light source in the eye-safety mode when a temperature drop rate of the frame exceeds a reference value.3. The beam projector module of claim 1 , wherein the temperature sensor is connected to the optical device to measure a temperature of the optical device claim 1 , and the processor is configured to operate the light source in the ...

Projector, electronic device having projector and associated manufacturing method

The present invention provides a projector including a substrate, a laser module and a lens module. The laser module is positioned on the substrate, and a laser diode of the laser module is not packaged within a can. The lens module is arranged for receiving a laser beam from the laser diode of the laser module to generate a projected image of the projector.

LASER ASSISTED DENTISTRY WITH RIDGE PRESERVATION (LARiP)

A laser-assisted ridge preservation method is performed using a free-running (FR) pulsed neodymium yttrium aluminum garnet (Nd:YAG) laser device. The method includes one or more of photothermally denaturing and vaporizing encapsulated granulomatous tissues with the laser device on all sides of a socket of an extracted tooth, and irradiating the socket with the laser device to form a thrombus. A bone graft material may be placed into the thrombus. 1. A laser-assisted ridge preservation method using a free-running (FR) pulsed neodymium yttrium aluminum garnet (Nd:YAG) laser device , the method comprising:photothermally denaturing and vaporizing encapsulated granulomatous tissues with the laser device on all sides of a socket of an extracted tooth;irradiating the socket with the laser device to form a thrombus; and,placing bone graft material into the thrombus.2. The method of wherein the tooth is extracted atraumatically along a root surface and through a periodontal ligament with a periotome or periosteotome.3. The method of wherein the step of irradiating is performed with output power from the FR Nd:YAG laser device within 3.00 to 4.00 Watts.4. The method of wherein the step of irradiating is performed with a pulse duration from the FR Nd:YAG laser device of 650 μs.5. The method of wherein the step of irradiating is performed with a repetition rate from the FR Nd:YAG laser device of 10 to 30 Hz claim 4 , typically 20 Hz.6. The method of wherein the step of irradiating is performed with total output energy from the FR Nd:YAG laser device within 100 to 200 Joules for a bicuspid tooth claim 5 , and 300 to 600 Joules for a molar tooth.7. The method of wherein the bone graft material is a spongious bone substitute which has slow resorption by host tissues.8. The method of wherein the bone graft material is placed into the thrombus midway in the alveolus from the depth of the alveolar process to the crestal bone such that the graft is submerged and completely contained ...

SEMICONDUCTOR LASER STRUCTURE

A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

HIGH-POWER LASER DIODE PACKAGING METHOD AND LASER DIODE MODULE

A multi-layer laser diode mount is configured with a submount made from thermo- and electro-conductive material. One of the opposite surfaces of the submount supports a laser diode. The other surface of the submount faces and is spaced from a heatsink. The submount and heatsink are configured with respective thermal expansion coefficients (“TEC”) which are different from one another. The opposite surfaces of the submount are electroplated with respective metal layers one of which is bonded to a soft solder layer. 1. A multi-layer laser diode mount comprising:a submount having one surface supporting a diode laser;a heatsink spaced from and facing a surface of the submount opposite the one surface, the submount and heatsink being configured with respective thermal expansion coefficients (“TEC”) differing from one another;a metal layer deposited over and in contact with the opposite surface of the submount; anda soft solder layer bonded to the metal layer and coupled to the heatsink so that a temperature of a p-n junction of the diode laser remains substantially constant through a predetermined amount of repeated thermo-cycles of up to at least several hundred cycles with a temperature differential ΔT within each cycle exceeding one hundred ° C.2. The mount of claim 1 , wherein the temperature of the p-n junction remains constant in a 0 to 2° C. temperature range over the predetermined amount of repeated thermo-cycles.3. The mount of claim 2 , wherein the temperature of the p-n junction remains below 1° C. over the predetermined amount of repeated thermo-cycles.4. The mount of further comprising a spacer made from material with a TEC matching that of the submount and bonded to the soft solder layer claim 1 , and a hard solder layer located between and bonded to the spacer and heatsink.5. The mount of claim 1 , wherein the metal layer has a thickness reaching hundreds of microns.6. The mount of claim 5 , wherein the metal layer terminates at a distance from a periphery ...

Infrared illumination device configured with a gallium and nitrogen containing laser source

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

INTERFEROMETRY WITH PULSE BROADENED DIODE LASER

Various optical systems equipped with diode laser light sources are discussed in the present application. One example system includes a diode laser light source for providing a beam of radiation. The diode laser has a spectral output bandwidth when driven under equilibrium conditions. The system further includes a driver circuit to apply a pulse of drive current to the diode laser. The pulse causes a variation in the output wavelength of the diode laser during the pulse such that the spectral output bandwidth is at least two times larger the spectral output bandwidth under the equilibrium conditions. 123-. (canceled)24. An optical system for imaging a sample comprising:a diode laser having a junction for providing a beam of radiation, said diode laser having a first spectral output bandwidth when driven under constant current conditions;a driver circuit to apply a pulse of drive current to the diode laser, said pulse having a current amplitude that varies in time causing a variation in the output wavelength of the diode laser during the pulse to produce a second spectral output bandwidth that is at least two times larger than the first spectral output bandwidth under constant current conditions and wherein the rate of change of the current amplitude of the pulse is slow enough such that the difference between the actual temperature of the junction and the equilibrium temperature of the junction is minimized during the pulsea beam divider for dividing the beam of radiation into a sample arm and a reference arm, wherein the sample arm contains the sample to be imaged;a detector to measure the interference of a sample beam returning from the sample and a reference beam returning from the reference arm; anda processor to convert the measured interference into depth information of the sample.25. The system of claim 24 , wherein said system is a point scanning swept-source optical coherence tomography (SS-OCT) system.26. The system of claim 25 , wherein the diode laser is ...

Semiconductor laser device

A semiconductor laser device is configured so that, on at least one of the respective opposing surfaces of a semiconductor laser chip and a sub-mount and the respective opposing surfaces of the sub-mount and a heatsink, one or more treatment regions are provided where adhesion of a bonding material or bonding material used for their bonding is reduced, wherein the one or more treatment regions are placed to define, in a traveling direction of light, different coverages depending on a position in an array direction of multiple light emitting regions.

OPTICAL MODULE AND METHOD FOR MANUFACTURING THE OPTICAL MODULE

An optical module according to an embodiment includes a plurality of laser diodes (LDs) to , a multiplexing optical system combining a plurality of laser beams from the respective plurality of LDs, and a package accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive. 1. An optical module comprising:a plurality of laser diodes;a multiplexing optical system combining a plurality of laser beams emitted from the respective plurality of laser diodes and emitting a resultant light beam of the plurality of laser beams; anda package accommodating the plurality of laser diodes and the multiplexing optical system,wherein the package comprises:a support mounted with the multiplexing optical system; anda cap joined to the support for hermetically enclosing the plurality of laser diodes and the multiplexing optical system, the cap including a transmissive window for allowing the resultant light beam to pass through,wherein at least one of the plurality of laser diodes has an oscillation wavelength of not more than 550 nm,wherein the package has an internal moisture content of not more than 3000 ppm, andwherein the multiplexing optical system is fixed to the support by a resin curing adhesive.2. The optical module according to claim 1 , wherein an internal space of the package is defined by the support and the cap and has a volume of not less than 200 mm.3. The optical module according to claim 1 , wherein the oscillation wavelength ranges from 435 nm to 465 nm.4. The optical module according to claim 1 , wherein the oscillation wavelength ranges from 390 nm to 420 nm. ...

OPTICAL TRANSMITTER WITH A HEAT DISSIPATION STRUCTURE

An optical transmitter with a heat dissipation structure is provided. The heat dissipation structure comprises a substrate and an optical transmitter unit. The substrate comprises a base body, a heat dissipation well disposed on the base body, and a thermal conductive block inserted into and fixed to the heat dissipation well. The thermal conductive block has on one side thereof a heat guiding plane. The optical transmitter unit comprises a heat dissipating substrate directly disposed on the heat guiding plane, and a laser diode directly disposed on the heat dissipating substrate. The laser diode features an active region whose height is lowered to shorten a heat conduction path wherein heat is transferred from the active region through the heat dissipating substrate to the heat guiding plane. The heat already transferred to the heat guiding plane is transferred horizontally by the thermal conductive block to the base body which encloses the heat dissipation well. 1. An optical transmitter with a heat dissipation structure , comprising:a substrate comprising a base body, a heat dissipation well disposed on the base body, and a thermal conductive block inserted into and fixed to the heat dissipation well and having a side with a heat guiding plane thereon; andan optical transmitter unit disposed on the thermal conductive block and comprising a heat dissipating substrate directly disposed on the heat guiding plane and a laser diode directly disposed on the heat dissipating substrate, wherein the laser diode has an active region whose height is lowered to shorten a heat conduction path of heat transferred from the active region through the heat dissipating substrate to the heat guiding plane, wherein the heat already transferred to the heat guiding plane is transferred horizontally to the base body enclosing the heat dissipation well.2. The optical transmitter with a heat dissipation structure of claim 1 , wherein the substrate is a housing which comprises an optical ...

TEMPERATURE CONTROL FOR AN IMAGING LASER

In one example, an imaging system () for a laser printer includes: an imaging laser () in which, within a range of drive currents, a threshold current of the laser varies with temperature and an efficiency of the laser does not vary with temperature; a power sensor () to measure an output power of the laser at a drive current within the range of drive currents; and a temperature control device () to change the temperature of the laser based on an output power measured by the power sensor. 1. An imaging system for a laser printer , comprising:an imaging laser in which, within a range of drive currents, a threshold current of the laser varies with temperature and an efficiency of the laser does not vary with temperature;a power sensor to measure an output power of the laser at a drive current within the range of drive currents; anda temperature control device to change the temperature of the laser based on an output power measured by the power sensor.2. The system of claim 1 , where:the imaging laser comprises multiple imaging lasers arrayed to simultaneously image a photoconductor, each laser in the array having, within a range of drive currents, a threshold current that varies with temperature and an efficiency that does not vary with temperature;the power sensor is to measure an output power of each of the lasers individually at a drive current within the range of drive currents; andthe temperature control device is to change the temperature of the array or of each of the lasers individually based on an output power measured by the power sensor.3. The system of claim 2 , comprising a controller to claim 2 , during an imaging sequence:drive each laser individually to emit a beam;receive a signal from the power sensor measuring an output power of the laser emitting the beam;determine a threshold current for the laser based on the measured output power;compare the threshold current to a target; andif the threshold current is different from the target, cause the ...

OPTICAL MODULE

An optical module includes an LD that emits laser beam; a carrier that mounts the LD and thermistor thereon; a photodetector detecting the laser beam output from the LD; a TEC that mounts the carrier and the photodetector thereon; a chassis having a box-shape demarcated by walls that form a space for enclosing the LD, the TEC, and the photodetector therein, wherein at least of the walls has a window, and the thermistor arranged between the LD and the photodetector. 1. An optical module , comprising:an LD that emits laser beam;a carrier that mounts the LD and thermistor thereon;a photodetector detecting the laser beam output from the LD;a TEC that mounts the carrier and the photodetector thereon;a chassis having a box-shape demarcated by walls that form a space for enclosing the LD, the TEC, and the photodetector therein,wherein at least of the walls has a window, and the thermistor arranged between the LD and the photodetector.2. The optical module ofwherein the photodetector composed of a material including a silicon3. The optical module offurther comprising a beam splitter input the laser beam, and output a first output beam and a second output beam opposite to the first output beam.4. The optical module offurther comprising an isolator arranged between the LD and the beam splitter.5. The optical module ofwherein the photodetector includes a 90-degree hybrid, a first light receiving element, a second light receiving element, a third light receiving element.6. The optical module ofwherein the LD being a wavelength tunable laser.7. The optical module ofwherein the wavelength tunable laser includes a Sampled Grating Distributed FeedBack, a Chirped Sampled Grating Distributed Bragg Reflector, and a Semiconductor Optical Amplifier.8. The optical module ofwherein at least of the Sampled Grating Distributed FeedBack and the Chirped Sampled Orating Distributed Bragg Reflector being a heater. The present disclosure relates to an optical module.Japanese Unexamined Patent ...

LASER BEAM COMBINATION APPARATUS

A laser beam combination apparatus includes: a lasers array, an optical turning element, a transformation lens, a dispersion element and an external cavity mirror. The lasers array comprises M rows of lasers, and each row of the lasers comprises N lasers; M×N laser beams output by the lasers array, after passing through the optical turning element, parallel exit, where the N laser beams corresponding to each row of the lasers constitute a coplanar laser beam array, planes where the M laser beam arrays lie are parallel to one another, and planes where two adjacent laser beam arrays lie are spaced apart by a designated distance; the N laser beams in each laser beam array, after going through the convergence by the transformation lens, individually incident on the dispersion element at different angles; and the N laser beams in each laser beam array, after going through the dispersion element, are combined into one beam of output light, and M output beams corresponding to the M laser beam arrays are parallel output through the external cavity mirror. 1. A laser beam combination apparatus , comprising: a lasers array , an optical turning element , a transformation lens , a dispersion element , and an external cavity mirror;the lasers array comprises M rows of lasers, and each row of the lasers comprises N lasers, wherein both M and N are positive integers greater than 1;M×N laser beams output by the lasers array, after passing through the optical turning element, parallel exit, wherein the N laser beams corresponding to each row of the lasers constitute a coplanar laser beam array, planes where M laser beam arrays lie are parallel to one another, and planes where two adjacent laser beam arrays lie are spaced apart by a designated distance;the M laser beam arrays incident on the transformation lens, and the N laser beams in each laser beam array, after converged by the transformation lens, individually incident on the dispersion element at different angles; andthe N ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other. 1. A semiconductor light-emitting device , comprising:a first heat sink formed of an insulating member;a second heat sink formed of an insulating member, facing the first heat sink with a cavity therebetween, and thermally connected to the first heat sink; anda semiconductor light-emitting element held in the cavity and connected to the first heat sink and the second heat sink, whereinthe second heat sink has a first electrode and a second electrode on a first surface facing the first heat sink, and a third electrode and a fourth electrode on a second surface opposite to the first surface,the first electrode is electrically connected to a lower electrode of the semiconductor light-emitting element,the second electrode is electrically connected to an upper electrode of the semiconductor light-emitting element, andthe first electrode and the third electrode are electrically connected to each other, and the second electrode and the fourth electrode are electrically connected to each other.2. The semiconductor light-emitting device of claim 1 , whereinthe first electrode and the third electrode are electrically ...

INTERPOSER CONFIGURATION WITH THERMALLY ISOLATED REGIONS FOR TEMPERATURE-SENSITIVE OPTO-ELECTRONIC COMPONENTS

An interposer (support substrate) for an opto-electronic assembly is formed to include a thermally-isolated region where temperature-sensitive devices (such as, for example, laser diodes) may be positioned and operate independent of temperature fluctuations in other areas of the assembly. The thermal isolation is achieved by forming a boundary of dielectric material through the thickness of the interposer, the periphery of the dielectric defining the boundary between the thermally isolated region and the remainder of the assembly. A thermo-electric cooler can be used in conjunction with the temperature-sensitive device(s) to stabilize the operation of these devices. 1. An opto-electronic (OE) device , comprising:an substrate including a first portion, a second portion, and a dielectric boundary strip attached to the first and the second portions;at least one electrical component disposed at the first portion; andat least one temperature-sensitive opto-electronic component disposed at the second portion and configured to be optically coupled to the at least one electrical component,wherein the dielectric boundary strip includes a thermal conductivity less than the thermal conductivity of the first and second portions.2. The OE device of claim 1 , wherein the dielectric strip is disposed between the first and the second portions.3. The OE device of claim 2 , wherein the dielectric boundary strip extends between opposite sides of the substrate.4. The OE device of claim 3 , wherein the second portion comprises a plurality of second conductive through-vias which couple the at least one temperature-sensitive opto-electronic component to a photonic chip.5. The OE device of claim 1 , wherein the at least one temperature-sensitive opto-electronic component comprises a laser diode array.6. The OE device of claim 5 , further comprising a thermo-electric cooler supported by the substrate.7. The OE device of claim 6 , wherein the thermo-electric cooler is coupled to the laser ...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND MANUFACTURING METHODS THEREOF

A semiconductor device includes: a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part; a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame; a plate jointed to the outside or inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame; a lead terminal inserted into the first through-hole and the second through-hole; a fixing member provided in the second through-hole and fixing the lead terminal; and a semiconductor element fixed to the inside part. 1. A semiconductor device comprising:a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part, wherein a thickness of the bottom plate at the inside part is greater than a thickness of the bottom plate at the outer peripheral part, and wherein the lower surface comprises a reference part and at least one recess positioned above the reference part;a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame so as to connect an inside surface and an outside surface of the frame;a plate jointed to one of the outside surface of the frame or the inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame;a lead terminal inserted into the first through-hole and the second through-hole;a fixing member provided ...

Stabilized diode laser

A process for creating a stabilized diode laser device is disclosed, where the stabilized diode laser device includes a unibody mounting plate and several chambers aligned along a transmission axis. Various optic components are placed in the chambers, and based on a transmission through the chambers, the optic components are aligned and secured within the chambers.

Hand-held, massively-parallel, bio-optoelectronic instrument

A hand-held bioanalytic instrument is described that can perform massively parallel sample analysis including single-molecule gene sequencing. The instrument includes a pulsed optical source that produces ultrashort excitation pulses and a compact beam-steering assembly. The beam-steering assembly provides automated alignment of excitation pulses to an interchangeable bio-optoelectronic chip that contains tens of thousands of reaction chambers or more. The optical source, beam-steering assembly, bio-optoelectronic chip, and coupling optics register to an alignment structure in the instrument that can form at least one wall of an enclosure and dissipate heat.

VCSEL STRUCTURE WITH EMBEDDED HEAT SINK

An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter. 1. An optoelectronic device , comprising:a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side;at least one optoelectronic emitter formed on the front side of the semiconductor substrate in proximity with the at least one cavity; anda heat-conducting material at least partially filling the at least one cavity and configured to serve as a heat sink for the at least one optoelectronic emitter.2. The optoelectronic device according to claim 1 , wherein the heat-conducting material comprises an electrically-conducting material claim 1 , which serves the at least one optoelectronic emitter as an electrical contact.3. The optoelectronic device according to claim 1 , wherein the at least one cavity is filled with at least two fill materials.4. The optoelectronic device according to claim 3 , wherein the at least two fill materials comprise an electrically-conductive film deposited over an interior surface of the at least one cavity in ohmic contact with the semiconductor substrate claim 3 , and a thermally-conductive material deposited over the electrically-conductive film.5. The optoelectronic device according to claim 1 , wherein the at least one optoelectronic emitter comprises an array of emitters on the front side of the semiconductor substrate claim 1 , and the at least one cavity comprises an array of cavities on the back ...

Semiconductor Unit with Submount for Semiconductor Device

A semiconductor unit includes a submount and a chip coupled to the submount. The submount is configured with a base and a plurality of layers between the base and the chip. One of the layers, a heat-spreading electro-conducting sliver (“Ag”) layer, is deposited atop the base. The thickness of the Ag layer is selected so that a cumulative coefficient of thermal expansion of the submount substantially matches that one of the chip. Coupled to the active zone of the chip is a stress-dumping layer made from elastic malleable materials.

LASER COMPONENT

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip. 1. A laser component comprising:a housing;a laser chip arranged in the housing; anda conversion element for radiation conversion arranged in the housing, wherein the conversion element is irradiatable with laser radiation of the laser chip.2. The laser component according to claim 1 , wherein the conversion element comprises a phosphor layer.3. The laser component according to claim 2 , wherein the phosphor layer comprises a thermally conductive material with one phosphor or a plurality of phosphors embedded therein.4. The laser component according to claim 2 , wherein the conversion element comprises a thermally conductive layer that dissipates heat from the phosphor layer.5. The laser component according to claim 4 , wherein the thermally conductive layer is formed from one selected from the group consisting of metal claim 4 , ceramic claim 4 , diamond claim 4 , sapphire claim 4 , and matrix material with embedded carbon nanotubes.6. The laser component according to claim 4 , wherein the phosphor layer is partly concealed by the thermally conductive layer claim 4 , and the phosphor layer is irradiatable with laser radiation of the laser chip in a region in which the phosphor layer is not concealed by the thermally conductive layer.7. The laser component according to claim 4 , wherein the thermally ...