Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften

Die vorliegende Erfindung bezieht sich auf einen oberflächenemittierenden Halbleiterlaser mit vertikalem Resonator, aufweisend einen Substratbasisabschnitt (1) und eine auf und/oder an dem Substratbasisabschnitt angeordnete Mesa (M), wobei die Mesa im Wesentlichen senkrecht zur Substratbasisebene gesehen, umfasst: zumindest einen Teil eines ersten, dem Substratbasisabschnitt zugewandt angeordneten Dotierbereiches (2), zumindest einen Teil eines zweiten, dem Substratbasisabschnitt abgewandt angeordneten Dotierbereiches (4) und einen zwischen dem ersten und dem zweiten Dotierbereich angeordneten aktiven Bereich (3) mit mindestens einer aktiven Schicht (A) mit laseremittierender Zone, welche imert, dadurch gekennzeichnet, dass die Mesa (M) in indestens eine Einschnürung (E) aufweist.

System zur Beleuchtung für ein Kraftfahrzeug mit einer Laserlichtquelle

System (1) zur Beleuchtung für ein Kraftfahrzeug, aufweisend- eine Laserlichtquelle (2) zum Aussenden eines Primärlichtbündels aus Laserstrahlen innerhalb eines Raumwinkelbereichs um eine Strahlrichtung (3),- ein Element (4) zur Photolumineszenz, wobei das Element (4) innerhalb des von der Laserlichtquelle (2) ausgesendeten Primärlichtbündels angeordnet ist und derart ausgebildet ist, die auf das Element (4) auftreffenden Laserstrahlen zu absorbieren und zu streuen sowie mittels Photolumineszenz und Streuung Lichtstrahlen eines Sekundärlichts (6) auszusenden, sowie- mindestens eine Schutzvorrichtung (8, 8') zum Schutz vor aus dem System (1) austretenden Laserstrahlen, wobei die Schutzvorrichtung (8, 8') mit einem Schutzelement (9, 9') ausgebildet ist, welches in Form eines Streifens ausgebildet ist und eine längliche Form mit einem ersten Ende und einem zweiten Ende aufweist, wobei das erste Ende des Schutzelements (9, 9') als freies Ende innerhalb der Strahlrichtung (3) des Primärlichtbündels ...

Luminescence diode chip, e.g. LED or laser diode (LD), containing, at chip flank, element suitable for mechanical connectoin between luminescence diode chip and another body, for LED, LD, etc. low-cost manufacture and operation

On flank (2) of luminescence diode chip (1) is located element (3) suitable to connect mechanically diode chip and another body (10) and preferably for electric contacting of diode chip. Typically, element contains solder and/or conductive adhesive. Chip may contain epitaxially grown layer stalk (5), including at least one active zone generating electromagnetic radiation. Layer stack may contain at least one waveguide structure. Mesa structure (6) may be incorporated in layer stack constriction. Independent claims are included for optoelectronic component and method for manufacture of LED, LD, etc.

INJECTION LASER & MONITOR PHOTOSENSOR COMBINATION

Lasereinheit für einen Fahrzeugscheinwerfer sowie Lasermodul

The invention relates to a laser unit (2) for a vehicle headlight, which laser unit has a laser diode (11) and an adjustable optical system assigned to the laser diode (11) and having optical elements including at least one collimator. At least one of the optical elements selected from the group consisting of a collimator (13, 22) and a deflective mirror (20) is mounted such that it can be pivoted about at least one spatial axis.

PROCEDURE FOR THE UTILIZATION OF DISK-SHAPED RAW MATERIAL WITH THE PRODUCTION OF OPTO-ELECTRONIC ELEMENTS WITH LATTICES OF VARIABLE LATTICE PERIOD

CIRCUIT BOARD, METHOD FOR MANUFACTURING SAME, AND HIGH-OUTPUT MODULE

A circuit board comprising a patterned first metal layer 14 formed on a ceramic substrate 11, a patterned second metal layer 16 formed on the first metal layer, and a third metal layer 17 formed covering the entire upper surface and side surfaces of the second metal layer and a part of the upper surface of the first metal layer, wherein portions of the first metal layer not covered by the third metal layer are reduced in width by etching. The circuit board has thick-film fine wiring patterns with high bonding strength between the wiring patterns and the substrate and high reliability and enables realization of high-output modules which are small in size and high in performance, by mounting at least one high-output semiconductor element thereon.

SYSTEMS, DEVICES, AND METHODS FOR FOCUSING LASER PROJECTORS

Systems, devices, and methods for focusing laser projectors are described. A laser projector includes N = 1 laser diodes, each of which emits laser light having a divergence. Each laser diode is paired with a respective primary or collimation lens to at least reduce a divergence of the laser light that the laser diode produces. Downstream from the primary lens(es) in the optical path(s) of the laser light, a single dedicated secondary or convergence lens converges the laser light to a focus. By initiating the convergence of the laser light at the secondary or convergence lens as opposed to at the primary or collimation lens(es), numerous benefits that are particularly advantageous in laser projection-based wearable heads-up displays are realized.

GRATING COUPLED WAVEGUIDE LASER APPARATUS

LIGHT SOURCE DEVICE

Included are a plurality of cylindrical LD holders (20) having holes (20m, 201) into which LDs (19) are fitted and fixed, respectively; a plate-like base (1) that has a first surface (1k), a second surface (1j) opposite to the first surface (1k), and a plurality of through holes (1a, 1b, 1c, 1d, 1e, 1f, g) through which the laser beams from the plurality of laser modules (19) fixed to the holder (20) pass, the holders (20) abutting against the first surface (1k) so as to connect the holes (20m, 20l) thereof to the through holes (1a, 1b, 1c, 1d, 1e, 1f, 1g) of the base (1), the second surface (1j) of the base (1) being arranged with a plurality of lenses (2, 4) corresponding to the through holes (1a, 1b, 1c, 1d, 1e, 1f, 1g); and adhesives (20a, 20b) applied to outer corners of abutment portions, at which the base (1) and the LD holders (20) abut against each other, for fixing the base (1) and the LD holders (20) to each other.

DIRECT BONDING OF COPPER TO ALUMINUM NITRIDE SUBSTRATES

Laser medium for fixing a semiconductor laser, and mounting a laser element in such a carrier.

Linvention concerne un procédé de montage dun élément laser à semiconducteur dans un support de laser (1), comportant les étapes suivantes: fournir un support de laser (1) comportant un corps (2) métallique muni dun logement (20) sensiblement cylindrique et comportant une extrémité frontale munie dune première ouverture de passage du faisceau laser produit par ledit élément laser, ainsi quune extrémité arrière (22) munie dune deuxième ouverture pour lintroduction dudit élément laser (3), ledit corps (2) étant traversé par un premier groupe de fenêtres (51, 52) disposées radialement dans un premier plan (P1) perpendiculaire à laxe (23) dudit logement (20), lespace angulaire entre lesdites fenêtres (51, 52) étant régulier, insérer ledit élément laser à semiconducteur dans ledit logement (20); insérer une colle de fixation dudit élément laser à semiconducteur dans lesdites fenêtres (51, 52); durcir simultanément la colle dans lesdites fenêtres (51, 52) au moyen de lumière ultraviolet pénétrant ...

光学元件，激光光源，激光设备，以及制作光学元件的方法

... 在一个LiTaO#-[3]基底1中形成了一些畴反转层3之后，形成一个光学波导。通过对这样形成的光学波长转换元件进行低温退火，便形成一个稳定质子交换层8，其中在高温退火过程中所产生的折射率增大被减少，由此提供了一个稳定的光学波长转换元件。这样，相位匹配波长变得恒定，谐波输出的变化被消除。结果，对于利用非线性光学效应的光学波长转换元件而言，提供了高度可靠的元件。 ...

Lamp unit and vehicle lamp

OPTOELECTRONIC SYSTEM INCLUDING/UNDERSTANDING SEVERAL SECTIONS HAS FONCTIONSRESPECTIVES COUPLEES BY COUPLING EVANESCENT AND METHOD FOR REALIZATION

Semiconductor laser and method of manufacture

Un laser à semiconducteurs comprend une puce de laser (21) et une sous-monture (27). La puce de laser comprend un substrat semiconducteur en forme de mésa (22) ayant une surface sur laquelle un ensemble de couches (23) nécessaires pour produire des oscillations laser, sont formées par épitaxie de façon à se conformer au profil de surface du substrat. La puce de laser (21) est brasée en position retournée sur la sous-monture (27). Dans le cas où de la brasure (28) s'élève le long des surfaces latérales de la puce de laser, elle ne court-circuite pas une jonction PN qui est formée dans les couches épitaxiales (23).

Transferring semiconductor crystal from a substrate to a resin

A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

High temperature semiconductor diode laser

A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.

Stabilized diode laser

A stabilized diode laser device is disclosed, which includes a unibody mounting plate that is mated mechanically to a thermoelectric cooler. The unibody mounting plate comprises chambers in which components, including a laser diode, are aligned and secured. A combination of the secured components within the unibody mounting plate, along with the thermoelectric cooler, provides stabilization of the laser diode.

FLIP CHIP TYPE LASER DIODE AND LATERAL CHIP TYPE LASER DIODE

A flip chip type laser diode includes a removable substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the removable substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer.

OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

METHOD AND SYSTEM FOR INTEGRATED DWDM TRANSMITTERS

Tunable diode laser system with external resonator

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОГО ЛАЗЕРНОГО ДИОДА

Использование: в технологии изготовления полупроводниковых лазерных диодов. Сущность изобретения: в способе изготовления полупроводникового лазерного диода, включающем изготовление полупроводниковой лазерной гетероструктуры на основе соединений элементов третьей и пятой групп, разделение ее на отдельные полосы, очистку их боковых граней в вакууме, нанесение на них защитного покрытия с последующим нанесением на одну из боковых граней отражающего покрытия, а на противоположную боковую грань - просветляющего покрытия, для очистки боковых граней полос полупроводниковой лазерной гетероструктуры полосы нагревают до температуры от 580 до 760oС, затем охлаждают до температуры от 0 до 240oС, после чего на боковые поверхности полос наносят от 0,1 до 1000 монослоев йода или брома, или хлора и нагревают полосы до температуры от 580 до 760oС. При нагреве и охлаждении полос полупроводниковой лазерной гетероструктуры на них подают пары элемента пятой группы, входящего в полупроводниковую лазерную гетероструктуру ...

Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente

ANORDNUNG VON OPTISCHEN HALBLEITERELEMENTEN

Offenbart ist eine Anordnung mit einer Vielzahl von optischen Halbleiterelementen. Die Halbleiterelemente werden jeweils über ein Federelement gegen einen Halbleiterelementträger gespannt. An dem Federelement liegt zusätzlich ein einem jeweiligen Halbleiterelement zugeordnetes optisches Element an, wobei das Federelement dabei derart ausgestaltet ist, dass es den Abstand zwischen dem Halbleiterelement und dem optischen Element fest definiert.

Verfahren zum Verdrahten eines Laserarrays

Integration elektronischer und optischer Schaltungen mittels Waferbonden

Eine Vorrichtung (100) mit: einem Optische-Schaltung-Wafer (102); und einem Integrierte-Schaltung-Wafer (104), wobei der Optische-Schaltung-Wafer und der Integrierte-Schaltung-Wafer anhand eines Waferbondingprozesses aneinander gebondet sind.

Lasereinrichtung

Um eine Lasereinrichtung bereitzustellen, welche es ermöglicht, die Kondenswasserbildung auf einer Kühleinrichtung der Lasereinrichtung zu verhindern ermöglichen, während sie zu einer höheren Lebensdauer des verwendeten Feuchtigkeitssensors beiträgt. Eine Lasereinrichtung (1) weist eine Laserdiode (10) und eine Kühleinrichtung (20) zum Kühlen der Laserdiode (10) auf. Die Laserdiode und die Kühleinrichtung sind in einem Gehäuse (2) vorgesehen. Die Lasereinrichtung weist auf: den Feuchtigkeitssensor (30), die Feuchtigkeit in der Lasereinrichtung (1) erfasst, während dem Feuchtigkeitssensor (30) Strom zugeführt wird, und eine Stromanwendungssteuerungseinrichtung (40), welche die Zeit des Zuführens von Strom zum Feuchtigkeitssensor (30) steuert. In einem Gesichtspunkt der Lasereinrichtung (1) weist die Lasereinrichtung ferner auf: einen Temperatursensor (50), der eine Temperatur im Gehäuse (2) erfasst, und einen Taupunktberechner (60), der einen Taupunkt basierend auf der Feuchtigkeit, die ...

ELECTRONIC COMPONENT ASSEMBLIES

Method of detecting a condition

Lasereinheit für einen Fahrzeugscheinwerfer sowie Lasermodul

The invention relates to a laser unit (2) for a vehicle headlight, which laser unit has a laser diode (11) and an adjustable optical system assigned to the laser diode (11) and having optical elements including at least one collimator. At least one of the optical elements selected from the group consisting of a collimator (13, 22) and a deflective mirror (20) is mounted such that it can be pivoted about at least one spatial axis.

Laser module and laser source assembly for a vehicle headlamp

Ein Lasermodul (11) beinhaltet einen Modulkörper (21) mit einem Kopfteil (24, 44), in dem in einem Aufnahmeraum (22) eine Laserquelle (20) mit einer Laserdiode und zugehörender Kollimatoroptik feststehend montiert sind. Der Kopfteil (24) bildet einen Gelenkteil eines Kugelgelenks mit zumindest einer Gelenkfläche (25); ein zweites Gelenkteil (30) mit einer korrespondierenden Gelenkfläche (35) gehört zu einem Lagerbauteil (31) für das Lasermodul (11). Das Einstellen der Ausrichtung der Laserquelle (20) erfolgt durch Justieren des Lasermoduls (11) als Ganzes in der durch die beiden Gelenkteile gebildeten Kugelgelenklagerung, und die so erreichte Justierung kann durch eine dauerhafte Befestigung, vorzugsweise mittels Punktschweißung, fixiert werden.

ELECTROOPTIC ASSEMBLY

Low cost optical bench having high thermal conductivity

METHOD AND DEVICE FOR PASSIVE ALIGNMENT OF DIODE LASERS AND OPTICAL FIBERS

... 90-3-844 METHOD AND DEVICE FOR PASSIVE ALIGNMENT OF DIODE LASERS AND OPTICAL FIBERS A method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a center line of a respective active element. When mounted, the front face of the chip is abutting the contact surfaces of the two front pedestals, and the defined sidewall of the mating channel is abutting the contact surface of the side pedestal. The passive alignment procedure is also effective in aligning a single fiber to a single active element.

DEVICE FOR RE-DIRECTING LIGHT FROM OPTICAL WAVEGUIDE

The device is formed on a silicon-on-insulartor chip (which comprises a layer of silicon (1) separated from a substrate (3) by an insulator layer (2)) and comprises an integrated waveguide (4) formed in the silicon layer (1) and a reflective facet (6) formed in a recess in the silicon layer (1). The facet (6) is positioned to redirect light in a desired direction. The waveguide (4) and facet (6) are both formed in the silicon layer (1) so their positions can be defined by the same lithographic steps so they are automatically aligned with each other.

OPTICAL AMPLIFIER IN SEMICONDUCTOR

L'invention concerne un amplificateur optique en semi-conducteur comportant une structure active guidante enterrée (12), caractérisé en ce qu'une contrainte extérieure est appliquée à ladite structure active guidante (12) de manière à ce qu'elle soit soumise à une contrainte globale qui rend le gain dudit amplificateur insensible à la polarisation de la lumière à amplifier, ladite contrainte extérieure provenant d'une force induite par un dépôt d'un matériau (50) contre un ruban (15) encadrant ladite structure active guidante (12).

III-V group GaN-based semiconductor device and manufacturing method thereof

파장 변환 부재, 그 제조 방법 및 발광 장치

... 대입경의 형광체 입자에 의한 광의 변환 효율을 저하시키지 않고, 공극을 감소시켜, 광원광의 투과를 억제할 수 있는 파장 변환 부재 및 발광 장치를 제공한다. 특정 범위의 파장의 광을 다른 파장의 광으로 변환시키는 파장 변환 부재 (100) 로서, 무기 재료로 이루어지는 기재 (110) 와, 기재 (110) 에 접합되고, 흡수광에 대하여 변환광을 발하는 형광체 입자 (122) 와 형광체 입자 (122) 끼리를 결합시키는 투광성 세라믹스 (121) 로 이루어지는 형광체층 (120) 을 구비하고, 형광체 입자 (122) 는, 소정의 입자경의 분포를 갖는 2 종류의 입자를 포함하고, 2 종류의 입자 중, 평균 입자경이 큰 대입자의 평균 입자경과 평균 입자경이 작은 소입자의 평균 입자경의 비가 2 ∼ 4 이고, 대입자의 체적과 소입자의 체적의 비가 5.7 이하이다.

Method of detecting a condition

According to the invention there is provided a method of detecting a condition associated with a final phase of a plasma dicing process comprising the steps of: providing a non-metallic substrate having a plurality of dicing lanes defined thereon; plasma etching through the substrate along the dicing lanes, wherein during the plasma etching infrared emission emanating from at least a portion of the dicing lanes is monitored so that an increase in infrared emission from the dicing lanes is observed as the final phase of the plasma dicing operation is entered; and detecting the condition associated with the final phase of the plasma dicing from the monitored infrared emission.

COMPACT OPTO-ELECTRONIC MODULES AND FABRICATION METHODS FOR SUCH MODULES

Discharge method, lens, manufacturing method thereof, semiconductor laser, manufacturing method thereof, optical device, and discharge device

To efficiently form microlenses respectively on a plurality of semiconductor lasers being in a wafer state. A discharge method includes; a step (A) of positioning a substrate having two discharging object parts so that a distance in the X-axis direction between two adjacent discharging object parts and a distance in the X-axis direction between two out of a plurality of nozzles arranged in the X-axis direction are equal to each other; a step (B) of moving the plurality of nozzles relatively to the substrate along a Y-axis direction orthogonal to the X-axis direction; and a step (C) of discharging liquid materials to the two discharging object parts from the two nozzles respectively when the two nozzles intrude into areas corresponding to the two discharging object parts in the step (B).

POWER SUPPLY UNIT FOR SUPPLYING ELECTRICAL POWER TO AT LEAST ONE CONSUMER

The invention pertains to a power supply unit (1000) for supplying electrical power to at least one consumer (200a, 200b), in particular to a semiconductor diode laser, with a power source (90) and a power supply unit (100) supplied therefrom. According to the invention, the power supply unit (100) is arranged in the immediate vicinity of the power source (90).

Floodlight device with two optical systems that condense and collimate laser light

A floodlight device comprises a light-emitting element that emits laser light, a fluorescent element on which light emitted from the light-emitting element is incident and which converts at least a portion of said light into fluorescent light that is output therefrom, a first optical system on which light output from the fluorescent element is incident, and a second optical system on which light exiting the first optical system is incident and which causes said light to be made into a collimated light beam that is made to exit therefrom so as to be directed toward the exterior of the device, a divergence angle of light incident on the second optical system is greater than a divergence angle of light incident on the first optical system.

Mounting method for optical device and optical head equipment

A method of mounting an optical device having a step on the surface opposing to a mounting substrate favorably by face-down bonding which enables a decrease in the number of components or integrate additional components on one identical substrate and, accordingly, is useful for reducing the size and the thickness of an optical head using a light source, the method typically includes the step of making the area ratio of each electrode to a solder pattern different for every wiring electrode portions upon mounting the electrodes on the substrate for mounting the optical device, in which the optical device having the step can be mounted favorably to the substrate by the control for the height of solder upon melting, and the volume of the solder is previously controlled depending on the wettability of a region of the substrate covered by the solder.

X-ray metrology system with broadband laser produced plasma illuminator

Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

Tunable laser source

A tunable laser source of a Littman arrangement type has a wavelength selection mirror rotating around a position where a mode hop is suppressed in a wavelength variation, a feed screw receiving a driving force of a motor at one end to be rotated, in which another end is disposed at a predetermined position, and which is larger in coefficient of thermal expansion than the optical base, a first nut feedably fitted to the feed screw, a flat spring in which one end is fixed to the first nut; and a mirror arm having a rotation shaft disposed at a rotation center of the wavelength selection mirror, and first and second arm portions formed in a V-like shape and elongating from the rotation shaft. The wavelength selection mirror is fixed to the first arm portion, and another end of the flat spring is fixed to the second arm portion.

SEMICONDUCTOR LASER DEVICE

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Kilowatt-class diode laser system

A system and method for producing a kilowatt laser system having a post resonator including a polarization multi-plexer, optical reconfiguration element, anamorphic element and fiber-optic module configured to arrange a multi-wavelength profile for coupling into an optical fiber.

Method for fabricating optical semiconductor device

In the method of fabricating an optical semiconductor device, a semiconductor layer is formed on an InP region, and includes semiconductor films. A first etching mask is formed on the semiconductor layer. The semiconductor layer is etched through the first etching mask to form a semiconductor mesa and a first marking mesa, each mesa includes an active layer and an InP cladding layer, the InP cladding layer being provided on the active layer. The active layer is made of semiconductor material different from InP. An InP burying region is grown through the first etching mask on a side of the semiconductor mesa and a side of the first marking mesa to bury the semiconductor mesa and the first marking mesa. A second etching mask is formed on the InP burying region after removing the first etching mask, and has an opening located above the first marking mesa. InP in the InP burying region and the first marking mesa is etched through the second etching mask to form a second marking mesa. The alignment ...

OPTICAL SENSING DEVICE

Устройство формирования квантовых состояний для систем квантовых коммуникаций на чипе

Изобретение относится к области квантовой криптографии в области защиты информации, реализуемой на фотонной интегральной схеме. Предлагаемое устройство содержит следующие конструктивные элементы: полупроводниковый лазер, работающий в непрерывном режиме; амплитудный модулятор, выполненный в виде симметричного интерферометра Маха-Цендера и состоящий из разъединителя, объединителя, узкополосного и широкополосного фазовых модуляторов; дополнительный разъединитель, установленный после объединителя амплитудного модулятора перед широкополосным фазовым модулятором; регулируемый оптический аттенюатор, установленный после широкополосного фазового модулятора и выполненный в виде разъединителя, двух узкополосных фазовых модуляторов и X-образного ответвителя; дополнительный регулируемый оптический аттенюатор, установленный перед выходом в квантовый канал и выполненный в виде двух узкополосных амплитудных модуляторов и объединителя. Технический результат заявленного изобретения заключается в повышении ...

Способ проверки работоспособности матрицы лазерных диодов

Изобретение относится к способам изготовления матриц лазерных диодов (МЛД). Способ проверки работоспособности МЛД состоит в том, что проводят технологическую тренировку МЛД, которая заключается в том, что устанавливают МЛД методом пайки на теплообменник, проверяют ток утечки, устанавливают МЛД с теплообменником на испытательный стенд, закрепляют термопреобразователь сопротивления на теплообменнике, на котором устанавливают рабочую температуру, подают электрическое питание на МЛД в соответствии с установочными значениями, такими как частота повторения импульсов тока накачки, длительность импульса тока накачки и амплитуда импульса тока накачки, при этом обеспечивают количество импульсов не менее 2×107 при амплитуде импульса тока накачки 100÷120 А, частоте повторения импульсов тока накачки не менее 100 Гц, перед началом тренировки, по окончании тренировки контролируют среднюю мощность импульса излучения, длину волны излучения, ширину огибающей спектра излучения, падение напряжения на МЛД при ...

Laservorrichtung

Vorgesehen ist eine Laservorrichtung, die in der Lage ist, Steuerungsaufgaben zu reduzieren, indem Mikroblasen enthaltendes Wasser verwendet wird, in welchem Kühlwasser Mikroblasen enthält. Eine Halbleiterlaservorrichtung weist eine Laseroszillationsvorrichtung (1) auf, die einen oder mehrere Laserresonatoren (12) und ein Gehäuse (5), welches einen oder mehrere Laserresonatoren (12) aufnimmt; eine außerhalb der Laseroszillationsvorrichtung (2) angeordnete Kühleinheit (3), die in der Lage ist, zirkuliertes Kühlwasser zu kühlen, das zum Kühlen der Laseroszillationsvorrichtung verwendet wird; und einen Kühlwasserzirkulationskanal (50) aufweist, der die Laseroszillationsvorrichtung (2) und die Kühleinheit (3) verbindet, um das zirkulierte Kühlwasser dorthindurch zirkulieren zu lassen, in dem das zirkulierte Kühlwasser Mikroblasen enthaltendes Wasser ist, welches Mikroblasen mit einem Maximaldurchmesser von 100 µm oder weniger aufweist.

Wellenlängenkonverter und Wellenlängenkonverterelement

Ein Wellenlängenkonverter beinhaltet: anorganische Phosphorteilchen; transluzente, nicht fluoreszierende, lichtemittierende, anorganische Teilchen; und ein anorganisches Bindemittel, wobei die anorganischen Phosphorteilchen und die transluzenten, nicht fluoreszierenden, lichtemittierenden, anorganischen Teilchen durch das anorganische Bindemittel aneinander gebunden sind, wobei eine durchschnittliche Teilchengröße der transluzenten, nicht fluoreszierenden, lichtemittierenden, anorganischen Teilchen gleich oder größer als eine durchschnittliche Teilchengröße der anorganischen Phosphorteilchen ist, die Wärmeleitfähigkeit der transluzenten, lichtemittierenden, anorganischen Teilchen größer ist als die Wärmeleitfähigkeit der anorganischen Phosphorteilchen, ein Brechungsindex der transluzenten, nicht fluoreszierenden, lichtemittierenden, anorganischen Teilchen innerhalb eines Bereichs von ±6% eines Brechungsindex der anorganischen Phosphorteilchen bleibt und Fluoreszenz bei Empfang von Anregungslicht ...

Verfahren zum Verdrahten eines Laserarrays

Injection laser and monitor photosensor combination

A distributed feedback (DFB) laser chip (1) has a monitor photodiode (24) mounted upon it in a position where it is able to receive light diffracted by the grating structure (14) of the laser. The photodiode may be mounted on a substrate on the laser or directly on the laser, and may be formed integrally with the laser. ...

A method of providing electrical separation in integrated devices and related device

Device for re-directing light fromoptical waveguide

Laser arrangement and related manufacturing method

Underwater semiconductor laser light source

OPTICAL COMPONENT

... 1425634 Light guides LICENTIA PATENTVERWALTUNGS - GmbH 7 Feb 1973 [8 Feb 1972] 5921/73 Heading G2J [Also in Division H1] A semi-conductor laser component comprising a laser active portion 1 and a light-emitting surface, has two oppositely disposed boundary surfaces 2,2' of the portion 1 oriented at an acute angle with respect to each other and converging toward the light-emitting surface. The portion 1 has a refractive index greater than that of the surrounding material 1', and may be semi-conductive, e.g. Ga Al As. In the embodiment, Figs. 7, 8 (not shown) a heterostructure diode comprises an active portion (12) bounded by converging troughs (11) etched in the superposed layers, the walls of the troughs being covered by a layer, e.g. of silica, of lower refractive index.

PROCEDURE FOR THE PRODUCTION OF AN OPTICAL DEVICE OF MEANS OF A REPLIKATIONSVERFAHRENS

TEMPERATURE-ADJUSTING LASER DIODE BUILDING GROUP

OPTICAL SYSTEM WITH SEVERAL FUNCTIONAL SECTORS GROUPS BY ABSORPTION COUPLING AND MANUFACTURING PROCESS

TUNABLE DIODE LASER SYSTEM WITH EXTERNAL RESONATOR

Method of manufacturing an optical device by means of a replication method

LASER LIGHT SOURCE APPARATUS AND METHOD OF MANUFACTURING THE SAME

The objective of the invention is to provide a technique for achieving a high in-plane mounting density of laser light source elements, and allow the position of lenses corresponding to each laser light source element to be adjusted with high accuracy. This laser light source device 1 comprises: a base 30; a plurality of semiconductor laser elements 101 to 104 arrayed on the upper surface of the base 30 at grid points comprising points of intersection between an x-axis group and a y-axis group, respectively arrayed along the x-axis and the y-axis, which is an intersecting direction with respect to the x-axis; a plurality of lenses 41 to 44 for turning laser lights delivered by the plurality of semiconductor laser elements 101 to 104 into parallel beams; a spacer 20 disposed on the upper surface of the base 30; and an adhesive 50 fixing the plurality of lenses 41 to 44 onto the spacer 20. For each of the lenses 41 to 44, the spacer 20 has a circular ring-shaped supporting surface 20b, and ...

TUNABLE LASER ASSEMBLY

ABSTRACT A tunable laser assembly housed in a single enclosure and a method of control is described that provides high-speed monitoring and control of the spectral properties of widely tunable lasers, such as MEMS-tunable VCSELs, with an optical configuration that does not introduce perturbations into the swept-source laser output spectrum that would cause artifacts in imaging applications such as optical coherence tomography (OCT). Date Recue/Date Received 2021-01-26 ...

METHOD FOR OPTIMIZED UTILIZATION OF BASE MATERIAL IN THE MANUFACTURE OF OPTOELECTRONIC COMPONENTS WITH VARIABLE-PERIOD GRATINGS

... ] Disclosed is a method for the optimum utilization of disk-shaped base material in the manufacture of optoelectronic components with variable-period grating. The method helps avoid material losses by arranging optoelectronic components on a disk-shaped base material in an optimum manner and is based on obtaining variants of nominally identical individual component patterns by mathematical rotation and mirroring, forming a unit cell through shifting of the individual component pattern variants, and reproducing the unit cell in the x and y directions until the active surface of the mask or the entire surface of the disk-shaped base material is tightly covered. The method may be used for the manufacture of photonic components based on DFB, DBR, or sampled grating structures.

DIRECT BONDING OF COPPER TO ALUMINUM NITRIDE SUBSTRATES

A process for direct bonding a copper film to an yttria-doped aluminum nitride substrate comprises treating the substrate by preoxidation at elevated temperature to create an overlying thin film of AlO3, followed by step cooling to a lower temperature. A copper foil of thickness between 1.0 and 4.0 microns and generally perforated or otherwise foraminous, is eutectically direct bonded to the substrate by the known direct bond copper (DBC) process. The resultant article exhibits high thermal conductivity, low permittivity and high mechanical strength. The peel strength of the copper film on the AlN substrate exceeds the peel strengths previously attainable in the industry.

Opto-electronic device comprising at least one component mounted on a support

LASER MULTIMODE

L'INVENTION CONCERNE UN LASER MULTIMODE COMPRENANT UN SUBSTRAT 1, UNE COUCHE INTERMEDIAIRE EPITAXIQUE 2, UNE COUCHE ACTIVE EPITAXIQUE 3 ET UNE COUCHE DE RECOUVREMENT EPITAXIQUE 4, LE TYPE DE CONDUCTIBILITE DE LA COUCHE INTERMEDIAIRE ETANT LE MEME QUE CELUI DU SUBSTRAT ET OPPOSE A CELUI DE LA COUCHE DE RECOUVREMENT. UNE BANDE DE CONTACT EPITAXIQUE ETROITE 5 EST PREVUE, DONT LE TYPE DE CONDUCTIBILITE EST LE MEME QUE CELUI DE LA COUCHE DE RECOUVREMENT 4, CETTE BANDE DE CONTACT 5 ETANT DOPEE A UN NIVEAU PLUS ELEVE QUE LA COUCHE DE RECOUVREMENT 4 ET LA LARGEUR DE BANDE INTERDITE DANS LA BANDE DE CONTACT 5 ETANT PLUS PETITE QUE DANS LA COUCHE DE RECOUVREMENT 4. UNE COUCHE DE CONTACT A BARRIERE DE SCHOTTKY 6 COUVRE LA BANDE DE CONTACT 5 ET LES PARTIES DE LA COUCHE DE RECOUVREMENT 4 NON RECOUVERTES PAR LA BANDE DE CONTACT 5, CETTE COUCHE DE CONTACT SCHOTTKY 6 ETANT CONNECTEE A UN RADIATEUR 8 PAR UNE SOUDURE 7.

OPTICAL COMPONENT

METHOD OF FORMING A SEMICONDUCTOR OPTICAL INTEGRATED DEVICE

PURPOSE: A semiconductor optical integrated device forming method is provided to be capable of maximizing a current concentration and optical connection efficiency. CONSTITUTION: A semiconductor optical integrated device forming method comprises forming an n-InP buffer layer(2), an InGaAsP active layer(3) and a p-InP clad layer(4) sequentially on an InP wafer(1). The layers(3,4) on the buffer layer(2) consisting of an active optical device are etched vertically against (001) plane by a dry etch method, to thereby form a rib pattern having a width below several micrometers. An InGaAs core layer(6) and an InP clad layer of an n/p/n structure are formed. The InP clad layer are selectively etched and removed, and a p-InP clad layer and a p-InGaAs cap layer are formed on a resultant structure. COPYRIGHT 2000 KIPO ...

Light converting device

MICROWAVE CIRCUIT

The invention concerns a microwave circuit comprising at least one inductive portion and at least one capacitive portion and having a resonance frequency, the microwave circuit comprising a material which acts as a dielectric for the capacitive portion, characterized in that the material acting as a dielectric comprises an active region that is an electrically pumped semiconductor heterostructure having at least two energy levels whose energy separation is close to the resonance frequency of the microwave circuit.

Spherical bearing optical mount

A mounting device for a laser light source comprising fixed and mobile platforms which are generally cylindrical in shape, the fixed platform being slideably receivable within an optical tube. Each of the platforms has both one closed and one open end, the closed end defining a centrally-located socket for receiving a spherical bearing and at least three holes spaced equidistant from each other. The holes in the fixed platform are alignable with those in the mobile platform. In assembled relation, the spherical bearing is juxtaposed between the two platforms and held in place by three clamping screws. The shank of each of these clamping screws extends through one of the holes in the fixed platform, past the spherical bearing, and threadedly engages a hole in the mobile platform. Adjustment of the boresight, or alignment with a target, of the laser beam is accomplished by tilting the mobile platform so that its longitudinal axis is disposed at a slight angle to the longitudinal axis of the ...

Optical head apparatus

Optical device, laser beam source, laser apparatus and method of producing optical device

After forming domain inverted layers 3 in an LiTaO₃ substrate 1 , an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.

Optical data link

One aspect of the present invention is an optical data link. The optical data link comprises a housing, first and second optical communication subassemblies, first and second substrates, and electronic components. The housing has a base portion which extends along a reference plane. The first and second optical communication subassemblies are contained in the housing. The first and second substrates are contained in the housing. The electronic components are electrically connected with the first optical communication subassembly, and are mounted on the first substrate. The electronic components are also electrically connected with the second optical communication subassembly and are mounted on the second substrate. The first substrate is inclined at a first angle with respect to another reference plane orthogonal to the first reference plane.

Method of manufacturing light emitting device

A method of manufacturing a light emitting device includes: disposing a first glass that does not contain a fluorescent material on a light-reflecting member; disposing a fluorescent material containing member on the light-reflecting member via the first glass; fusing the first glass to the fluorescent material containing member at a first temperature to fix the fluorescent material containing member to the light-reflecting member; placing a second glass containing a second fluorescent material on a light emitting surface side of the fluorescent material containing member; fusing the second glass to at least one of the light-reflecting member and the first glass at a second temperature that is lower than the first temperature; and disposing a light emitting element such that light emitted from the light emitting element is irradiated on a light incident surface of the fluorescent material containing member.

GAIN MEDIUM WITH IMPROVED THERMAL CHARACTERISTICS

A laser assembly () that generates a beam () includes a gain medium () having a first facet region () that includes a first facet (), a second facet region () that includes a second facet (), and an intermediate region () that separates and connects the facet regions () (). Additionally, the gain medium () includes a substrate layer () and a core layer () that extend between the facets () (). The gain medium () is designed so that when current is directed to the gain medium, (i) current flows through the core layer () in the intermediate region () to generate the beam (), and (ii) current does not flow through or flows at a reduced rate through the core layer () in one or both facet regions () (). 1. A laser assembly that generates a beam when current is directed to the laser assembly , the laser assembly comprising:a gain medium including (i) a first facet region that includes a first facet, (ii) a second facet region that includes a second facet, and (iii) an intermediate region that separates the facet regions and connects the facet regions; the gain medium having a substrate layer, and a core layer that extends between the facets; wherein the gain medium is designed so that when current is directed to the gain medium, current flows through the core layer in the intermediate region to generate the beam, and current does not flow through the core layer in the first facet region; wherein the gain medium is one of a Quantum Cascade gain medium and an Interband Cascade gain medium.2. The laser assembly of wherein the gain medium is designed so that when current is directed to the gain medium claim 1 , current does not flow through the core layer in second facet region.3. The laser assembly of wherein the gain medium includes a cladding layer that is adjacent to the core layer and that extends between the facets claim 2 , wherein the cladding layer has a higher electrical conductivity in the intermediate region than in the facet regions.4. The laser assembly of ...

ILLUMINATOR AND PROJECTOR

An illuminator includes a light source, a collimation system on which a light beam flux emitted from the light source is incident, and a light forming system including a lens array including a plurality of lenses. The plurality of lenses each have a lens surface having a non-rotationally symmetric free-form surface. The light forming system is configured to cause the plurality of lenses to divide the light beam flux having passed through the collimation system into a plurality of sub-light beam fluxes and the plurality of sub-light beam fluxes to be incident on an illuminated area.

MONOLITHICALLY INTEGRATED MODE-LOCKED VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL)

A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.

Optical device, laser beam source, laser apparatus and method of producing optical device

After forming domain inverted layers 3 in an LiTaO₃ substrate 1 , an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a nonlinear optical effect, a highly reliable element is provided.

Optical pickup for cd/dvd compatible player

A monolithic double-wavelength semiconductor laser diode is provided in a DVD/CD compatible player to suppress deterioration in the optical characteristics of a reading light spot. A laser diode is a monolithic element which has two light emitting points (21,22) on a single substrate for emitting two different laser beams having different wavelengths with each other. A central line of a main laser beam for use in reproducing DVDs is positioned closer to the optical axis Y of an optical system than a central line of a laser beam for use in reproducing CDs. In another arrangement, the central line of a main laser beam for use in reproducing DVDs is positioned so as to be coincident with the optical axis Y of the optical system.

LASERDIODE MIT VEREINFACHTER JUSTIERUNG

BELEUCHTUNGSVORRICHTUNG FÜR EIN FAHRZEUG

Eine Beleuchtungsvorrichtung für ein Fahrzeug kann aufweisen: eine Lichtquelleneinheit (100), die mindestens zwei Lichtquellen (120, 140) aufweist, die polarisierte Strahlen in unterschiedliche Richtungen emittieren, einen Filter (200), der dazu ausgebildet ist, die emittierten polarisierten Strahlen zu empfangen, einen der polarisierten Strahlen zu reflektieren und einen anderen der polarisierten Strahlen durchzulassen, und einen Emitter (300), der dazu ausgebildet ist, die polarisierten Strahlen von dem Filter (200) zu empfangen und die empfangenen polarisierten Strahlen als Licht einer vorgegebenen Farbe zu emittieren.

Lichtquellenvorrichtung

Lichtquellenvorrichtung, die folgendes aufweist: ein Unterteil (41), das mit einer Mehrzahl von Durchgangsbohrungen (41a) ausgebildet ist, eine Mehrzahl von Halbleiterlasern (42), die an der Rückseite des Unterteils (41) angeordnet sind und jeweils in einer entsprechenden Durchgangsbohrung (41a) des Unterteils (41) aufgenommen sind, eine Mehrzahl von Kollimatorobjektiven oder Kollimatorlinsen (43), die jeweils an eine Mehrzahl von Trageabschnitten (41b) angeklebt sind, die an der Vorderseite des Unterteils (41) ausgebildet sind, wobei die Mehrzahl von Kollimatorobjektiven oder -linsen (43) jeweils koaxial zur optischen Achse eines entsprechenden Lasers (42) angeordnet sind, strahlenkombinierende Mittel (45) zum Kombinieren von Halbleiterlaserstrahlen, die jeweils einer Mehrzahl von Lasern entstammen, um hierdurch Ausgangslaserstrahlen zu erzeugen, die im Wesentlichen auf einer einzigen optischen Achse liegen, wobei die genannte Mehrzahl von Trageabschnitten (41b) jeweils eine Mittellinrichtung ...

Laser diode array

INJECTION LASER AND MONITOR PHOTOSENSOR COMBINATION

Device for re-directing light fromoptical waveguide

DIODE LASER DEVICE

PROCEDURE FOR THE PRODUCTION OF A WAVELENGTH CONVERTER AND WAVELENGTH CONVERTER

Laser module and laser source assembly for a vehicle headlamp

Ein Lasermodul (11) beinhaltet einen Modulkörper (21) mit einem Kopfteil (24, 44), in dem in einem Aufnahmeraum (22) eine Laserquelle (20) mit einer Laserdiode und zugehörender Kollimatoroptik feststehend montiert sind. Der Kopfteil (24) bildet einen Gelenkteil eines Kugelgelenks mit zumindest einer Gelenkfläche (25); ein zweites Gelenkteil (30) mit einer korrespondierenden Gelenkfläche (35) gehört zu einem Lagerbauteil (31) für das Lasermodul (11). Das Einstellen der Ausrichtung der Laserquelle (20) erfolgt durch Justieren des Laser- moduls (11) als Ganzes in der durch die beiden Gelenkteile gebildeten Kugelgelenklagerung, und die so erreichte Justierung kann durch eine dauerhafte Befestigung, vorzugsweise mittels Punktschweißung, fixiert werden.

In circuit biasing and testing of a laser in a wdm transceiver board

Источник лазерного излучения

Полезная модель относится к конструкции оптоэлектронных источников лазерного излучения, в частности к конструкции высокоточных узкополосных лазеров с оптоволоконным выходом и пассивным охлаждением. В источнике лазерного излучения, содержащем выполненный из теплопроводного материала базовый узел с установленными в нем и функционально связанными между собой лазерным диодом с оптоволоконным выводом оптического сигнала, печатным узлом и разъемом интерфейса и питания, и средство крепления базового узла к монтажному основанию, упомянутое средство крепления базового узла к монтажному основанию выполнено в виде рамочного несущего узла, обрамляющего с зазором базовый узел, размещенного с зазором относительно монтажного основания и содержащего распределенные по контуру рамочного несущего узла и ориентированные во взаимно перпендикулярных направлениях, одни - к базовому узлу, а другие - к монтажному основанию, сквозные ниши с опорными поверхностями, размещенные в упомянутых нишах с опорой на упомянутые опорные поверхности закладные элементы из упругодеформируемого демпфирующего материала с осевыми отверстиями, и размещенные в упомянутых осевых отверстиях винтовые крепежные элементы так, что головки упомянутых винтовых крепежных элементов взаимодействуют с упомянутыми закладными элементами, а резьбовые окончания упомянутых винтовых крепежных элементов, расположенных в упомянутых нишах и ориентированных к базовому узлу, взаимодействуют с ответными резьбовыми отверстиями, выполненными в базовом узле, а резьбовые окончания упомянутых винтовых крепежных элементов, расположенных в упомянутых нишах и ориентированных к монтажному основанию, взаимодействуют с ответными резьбовыми отверстиями, выполненными в монтажном основании. Технический результат - повышение качества излучения. 4 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 208 680 U1 (51) МПК H01S 5/02218 (2021.01) G12B 15/06 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) ...

Surface emitting laser, light source, and optical module

A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.

Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device

[Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device. [Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layer 13 a with a gain wavelength λ 1 of about 1.55 μm and an active layer 13 b with a gain wavelength λ 2 of about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λ 1 and λ 2 and a diffraction grating 20 with a Bragg wavelength of the short gain wavelength λ 2 is formed near the active layer 13 b with the short gain wavelength λ 2 and near a butt-joint coupling portion 19 between the active layers 13 a and 13 b, an upper electrode provided above the active layer 13 b is short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layer 13 b when a driving current is applied to the active layer 13 a.

Optical module with ceramic package

An optical module with an arrangement is disclosed in which the module has the LD, the TEC, and the lens with the lens carrier also mounted on the TEC. The signal light from the LD is concentrated by the lens and reflected by the mirror each assembled with the lens carrier mounted on the TEC. The TEC is mounted on the bottom metal that covers the bottom of the ceramic package, the first layer of which is widely cut to set the TEC therein. The FPC is coupled in at least two edges of the first ceramic layer left from the cut.

Edge-emitting semiconductor laser

The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body ( 10 ), which comprises a waveguide region ( 4 ), wherein the waveguide region ( 4 ) comprises a first waveguide layer ( 2 A), a second waveguide layer ( 2 B) and an active layer ( 3 ) arranged between the first waveguide layer ( 2 A) and the second waveguide layer ( 2 B) and serving for generating laser radiation ( 5 ), and the waveguide region ( 4 ) is arranged between a first cladding layer ( 1 A) and a second cladding layer ( 1 B) disposed downstream of the waveguide region ( 4 ) in the growth direction of the semiconductor body ( 10 ). The waveguide region ( 4 ) has a thickness d of 400 nm or less, and an emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction parallel to the layer plane of the active layer ( 3 ) and the emission angle of the laser radiation ( 5 ) emerging from the semiconductor body ( 10 ) in a direction perpendicular to the layer plane of the active layer ( 3 ) differ from one another by less than a factor of 3.

Serially interconnected vertical-cavity surface emitting laser arrays

Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Method of fabricating epitaxial structures

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

Method, Circuitry and Apparatus for Outputting a Stable Optical Signal in a Dense Wavelength Division Multiplexing Device During Fast Changes of Operating Conditions

The disclosure relates to a fast and stable method of output wavelength control in a DWDM optical device, and a circuit configured to perform the method. The method and circuit can control of timing and overshoot during conditions of rapid operational changes, such as during power-on or restart of the device. The method and circuit includes optimized APC, TEC and electro-absorption (EA) modulator control hardware and algorithms, to effectively control transient processes. In the present disclosure, software and circuitry based on the method(s) are achieved in part by optimizing APC, EA and TEC control algorithms. The present disclosure combines low-cost methodology and hardware. In combination with hardware/circuit optimization, one can achieve fast turn-on of an optical output signal at a stable wavelength. The method and circuit provides a stable power-up process in which a change of wavelength is small enough to meet DWDM specification requirements, to ensure the elimination and avoidance of crosstalk in adjacent channels in dense wave (sub)systems.

Multi-wavelength high output laser source assembly with precision output beam

A laser source assembly ( 210 ) for generating an assembly output beam ( 212 ) includes a first laser source ( 218 A), a second laser source ( 218 B), and a dispersive beam combiner ( 222 ). The first laser source ( 218 A) emits a first beam ( 220 A) having a first center wavelength, and the second laser source ( 218 B) emits a second beam ( 220 B) having a second center wavelength that is different than the first center wavelength. The dispersive beam combiner ( 222 ) includes a common area 224 that combines the first beam ( 220 A) and the second beam ( 220 B) to provide the assembly output beam ( 212 ). The first beam ( 220 A) impinges on the common area ( 224 ) at a first beam angle ( 226 A), and the second beam ( 220 B) impinges on the common area ( 224 ) at a second beam angle ( 226 B) that is different than the first beam angle ( 226 A). Further, the beams ( 220 A) ( 220 B) that exit from the dispersive beam combiner ( 222 ) are substantially coaxial, are fully overlapping, and are co-propagating.

Frequency tunable terahertz transceivers and method of manufacturing dual wavelength laser

Provided are a frequency tunable terahertz transceiver and a method of manufacturing a dual wavelength laser. The frequency tunable terahertz transceiver includes: a dual wavelength laser including two distributed feedback lasers that are manufactured in one substrate and output optical signals of respectively different wavelengths; and an optical device receiving the outputted optical signals to generate a terahertz wave.

Opto-electronic assembly for a line card

In one embodiment, the opto-electronic assembly is a hybrid integrated circuit having an array of avalanche photodiodes (APDs) that are electrically coupled to a corresponding array of transimpedance amplifiers (TIAs), with both the APDs and TIAs being mounted on a common ceramic substrate. The opto-electronic assembly further has an optical subassembly comprising an arrayed waveguide grating (AWG) and an array of turning mirrors, both attached to a temperature-control unit in a side-by-side arrangement and flip-chip mounted on the substrate over the APDs. The opto-electronic assembly employs a silicon-based submount inserted between the APDs and the substrate to accommodate the height difference between the APDs and the TIAs. The submount advantageously enables the placement of APDs in relatively close proximity to the turning mirrors while providing good control of the APD's tilt and offset distance with respect to the substrate. The temperature-control unit enables independent temperature control of the AWG and of the array of turning mirrors, which helps to achieve good optical-coupling efficiency between the AWG and the APDs even when the turning mirrors have a relatively small size.

Intra-cavity optical parametric oscillator

An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

Multimode vertical-cavity surface-emitting laser arrays

Various embodiments of the present invention are directed to monolithic VCSEL arrays where each VCSEL can be configured to lase at a different wavelength. In one embodiment, a monolithic surface-emitting laser array includes a reflective layer, a light-emitting layer ( 102 ), and a grating layer ( 112 ) configured with two or more non-periodic, sub-wavelength gratings. Each grating is configured to form a resonant cavity with the reflector, and each grating is configured with a grating pattern that shapes one or more internal cavity modes and shapes one or more external transverse modes emitted through the grating.

Compact Interdependent Optical Element Wavelength Beam Combining Laser System and Method

A Compact Interdependent Optical Laser System and Method is designed for use with wavelength beam combining (WBC) systems that utilize both slow-axis and fast-axis WBC. Multiple optical elements having individual and interdependent functionality allow for the system to compact reducing the overall footprint of the system. Additional, configurations incorporating the compact system described herein allow for high-power and brightness scaling.

Heat sink for a pulsed high-power laser diode

A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm 2 , preferably approximately 5 mJ/mm 2 , and having a pulse duration of approximately 100 μs to approximately 2,000 μs, and the primary layer has a layer thickness which is between approximately 200 μm and approximately 2,000 μm, preferably between approximately 400 μm and approximately 2,000 μm.

Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate

Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 17 cm −3 , and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

Laser module

[Objective] To prevent change in a direction of an optical axis of a split light within a plane parallel to a surface on which the beam splitter is installed. [Means] A laser module including a laser light source that emits a laser light and a beam splitter that splits a portion of the laser light emitted from the laser light source. The beam splitter includes a first reflective surface and a second reflective surface that are parallel to each other. The first reflective surface transmits a first portion of the laser light and reflects a second portion of the laser light to the second reflective surface. The second reflective surface receives the second portion of the laser light from the first reflective surface and reflects received laser light in a direction parallel to the laser light emitted from the laser light source.

Vertical cavity surface emitting laser with active carrier confinement

It is an object of the present invention to improve the confinement of the carriers within a VCSEL. As a general concept of the invention, it is proposed to integrate a phototransistor layer structure into the layer stack of the VCSEL.

Light emitting device and package component

A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and a backwall portion provided to stand upright on an innermost part of the bottom portion, and the package component in which a cavity is provided in an inner side, and a light emitting element mounted on an inner side surface of the backwall portion of the package component, and including a light emitting surface on an upper end part, wherein a plurality of said light emitting element mounting components are stacked in a depth direction of the cavity to direct toward an identical direction.

Illumination unit, projection display unit, and direct view display unit

An illumination unit includes a plurality of light sources each including a solid-state light-emitting device configured to emit light from a light emission region including a single or a plurality of light-emitting spots. The solid-state light-emitting device includes a single chip or a plurality of chips each emitting light beam. Three or more of the light-emitting spots are provided within the whole light sources, to allow the whole light sources to emit light beams in two or more wavelength bands different from one another. Two or more of the plurality of the light sources include respective light-emitting spots which emit light in the same wavelength band.

Optical communication module

It is expected to provide an optical communication module that does not require making a conductive plate, such as a leadframe, become thinner in response to the downsizing of the photoelectric conversion device, such as a laser diode or a photodiode, and does not require downsizing a lens. A laser diode is connected and fixed to a conductive plate on the top surface of a transparent light-passing board. The light-passing board is connected and fixed to a conductive plate on the top surface of a transparent base. A first lens and a second lens are integrally formed on the top and the bottom surfaces of the base, respectively. The laser diode performs transmission of optical signals through the gap of conductive plate, the transparent light-passing board, the opening portion of a conductive plate, the opening portion of conductive plate, the first lens, the transparent base and the second lens.

Light-emitting device

A holding hole of a holding body has an edge portion and an inner peripheral surface which is a concavely curved surface connected to the edge portion. In a light source unit which supports a light source, projections are formed at three locations, and each of front surfaces thereof has a convexly curved line having a curvature radius longer than that of the inner peripheral surface. When the light source unit is inserted into the holding hole, the front surfaces of the projections at the three locations are brought into point contact with the edge portion at contact portions on the convexly curved lines. By performing laser welding at these contact portions, the attitude of the light source unit after its tilt adjustment can be stabilized and fixed to the holding body.

Optical module

There are provided an optical module including a semiconductor laser including a P-side electrode and an N-side electrode, and a semiconductor laser driver circuit that drives the semiconductor laser so as to output an optical signal from the semiconductor laser according to a pattern of a differentially transmitted digital electric signal, and the semiconductor laser driver circuit includes a positive-side terminal and a negative-side terminal for differentially transmitted non-inverted data, and a positive-side terminal and a negative-side terminal for differentially transmitted inverted data, and one terminal for the non-inverted data is electrically connected to one electrode of the semiconductor laser, and the other terminal for the non-inverted data, one terminal for the inverted data and the other terminal for the inverted data each are connected to the other electrode of the semiconductor laser.

Optical network structures for multi-core central processor unit

Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Method for Manufacturing Heat Dissipation Bulk of Semiconductor Device

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

Actively Mode Locked Laser Swept Source for OCT Medical Imaging

An optical coherence analysis system uses a laser swept source that is constrained to operate in a mode locked condition. This is accomplished by synchronously changing the laser cavity's gain and/or phase based on the round trip travel time of light in the cavity. This improves high speed tuning by taking advantage of frequency shifting mechanisms within the cavity and avoids chaotic laser behavior.

Diamond heat sink in a laser

A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced nitrogen content, is a reduced carbon-13 content, is a monocrystalline or multilayer low-strain diamond, or has a thermal conductivity of greater than 2200 W/mK.

Semiconductor laser module

A semiconductor laser module includes: a semiconductor laser element which emits light; a package base having a through hole; a lead pin which passes through the through hole and supplies the current to the semiconductor laser element; a glass material which seals the through hole through which the lead pin passes; and a cap which has a window from which light emitted by the semiconductor laser element is taken out and has the semiconductor laser element in the inside thereof, the cap being joined in air sealing relation to the package base. The lead pin is an iron-nickel alloys in which the coefficient of linear expansion is not higher than a predetermined ratio in difference with the glass material, the saturation magneto-striction constant is not higher than a predetermined value, and volume resistivity is not higher than a predetermined rate.

Symmetrical, Direct Coupled Laser Drivers

Symmetrical, direct coupled laser drivers for high frequency applications. The laser drivers are in integrated circuit form and use a minimum of relatively small (low valued) external components for driving a laser diode coupled to the laser driver through transmission lines. An optional amplifier may be used to fix the voltage at an internal node at data frequency spectrum to improve circuit performance. Feedback to a bias input may also be used to fix the voltage at the internal node. Programmability and a burst mode capability may be included.

Iii-nitride semiconductor laser device, and method of fabricating the iii- nitride semiconductor laser device

A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof

Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus

A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Optical receiving device and communication system

An optical receiving device includes multiple input ports to which light is input; multiple amplifiers that are arrayed and provided corresponding to the input ports, respectively, each of the amplifiers amplifying and outputting light input from a corresponding input port among of the input ports; a photo diode that converts light into an electrical signal; and a lens that inputs to the photo diode light output from the amplifiers.

Wavelength tunable laser device, optical module, and method of controlling wavelength tunable laser

Provided is a power saving and highly reliable wavelength tunable laser device. A wavelength tunable laser device 10 of the present invention includes: a wavelength tunable laser 11 including: a laser resonator including a light source 111 and wavelength tunable mechanisms 112 and 113; and light loss control units 114 a and 114 b; a temperature detecting element 12 detecting a temperature of the wavelength tunable laser 11; and a controller 13, wherein the controller 13 obtains temperature information a of the wavelength tunable laser 11 from the temperature detecting element 12, calculates wavelength tunable control parameters d and e and light loss control parameters b 1 and b 2 based on the temperature information a, controls the wavelength tunable mechanisms 112 and 113 based on the wavelength tunable control parameters d and e, and controls light loss control units 114 a and 114 b based on the light loss control parameters b 1 and b 2.

Gain-clamped semiconductor optical amplifiers

A gain-clamped semiconductor optical amplifier comprises: at least one first surface; at least one second surface, each second surface facing and electrically isolated from a respective first surface; a plurality of nanowires connecting each opposing pair of the first and second surfaces in a bridging configuration; and a signal waveguide overlapping the nanowires such that an optical signal traveling along the signal waveguide is amplified by energy provided by electrical excitation of the nanowires.

Optical coupling element and method of manufacturing the same

According to one embodiment, an optical coupling element comprises an optical waveguide, a ferrule provided with a holding hole which holds the optical waveguide, electrical read frame formed on the element mounting surface of the ferrule, an optical semiconductor element which is mounted on the element mounting surface of the ferrule and connected to the electrical read frame, and a transparent adhesive which fills the gap between the optical semiconductor element and the optical waveguide. At least one side of the optical semiconductor element partially falls within a region obtained by extending the holding hole in the ferrule toward the optical semiconductor element.

Group iii nitride semiconductor multilayer structure and production method thereof

According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

Beat signal generating device for use in a terahertz system, terahertz system and use of a beat signal generating device

The invention relates to a beat signal generating device for use in a Terahertz system, comprising a first monomode laser for generating radiation of a first wavelength; a second monomode laser for generating radiation of a second wavelength different from the first wavelength; a first and a second output port; a phase modulating unit for modifying both the phase of radiation generated by the first laser and the phase of radiation generated the second laser, wherein the beat signal generating device is configured in such a way that the radiation generated by the first laser is transmitted through the second laser and superposed with the radiation generated by the second laser at the second output port, and the radiation generated by the second laser is transmitted through the first laser and superposed with the radiation generated by the first laser at the first output port, such that a first beat signal will be emitted at the first output port and a second beat signal will be emitted at the second output port, wherein the phase between the first and the second beat signal can be adjusted by means of the phase modulating unit. The invention also relates to a Terahertz system and the use of a beat signal generating device.

Monolithic Optical Coupling Module Based On Total Internal Reflection Surfaces

A low-cost monolithic optical module for splitting one or more input optical beams to two or more output optical beams is provided. The one or more input optical beams are reflected by two or more total internal reflection (TIR) surfaces of the monolithic optical module. A light splitting ratio between the two or more output optical beams is predetermined by one or more physical features of the two or more TIR surfaces.

Semiconductor laser module and manufacturing method thereof

To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

Method and system for template assisted wafer bonding

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

Light projection unit and light projection apparatus

A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.

Light projection unit and light projection device

A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.

Means for improved implementation of laser diodes and laser diode arrays

A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Germanium light-emitting element

A germanium light-emitting device emitting light at high efficiency is provided by using germanium of small threading dislocation density. A germanium laser diode having a high quality germanium light-emitting layer is attained by using germanium formed over silicon dioxide. A germanium laser diode having a carrier density higher than the carrier density limit that can be injected by existent n-type germanium can be provided using silicon as an n-type electrode.

Light emitting device

A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Optical device, modulator module, and method for manufacturing the optical device

An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.

Optical semiconductor device, and manufacturing method thereof

The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.

Semiconductor laser element, method of manufacturing semiconductor laser element, and optical module

In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

Wavelength tunable laser diode

A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light with a wavelength at which the one of the gain peaks and one of the reflection peaks coincides. In the present LD, both the gain spectrum and the reflection spectrum are modified by adjusting the temperature of the SG-DFB region and that of the CSG-DBR region independently.

Semiconductor laser device and circuit for and method of driving same

A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

Method for producing semiconductor optical integrated device

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer

The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics.

Optical amplifying device

An optical amplifying device includes an optical system including a first end and a second end, the optical system configured to receive signal light through the first end, to lead the received signal light to an optical amplifying medium, and to output the signal light amplified by the optical amplifying medium through the second end, the optical system including a first optical isolator and a second optical isolator which are arranged on respective sides of the optical amplifying medium, wherein with respect to a direction in which the signal light propagates, each of the first optical isolator and the second optical isolator is capable of allowing light propagating in the same direction to pass therethrough and blocking light propagating in the opposite direction, and the first optical isolator and the second optical isolator have different center isolation wavelengths for the light propagating in the opposite direction.

Semiconductor laser mounting with intact diffusion barrier layer

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Compression Mount for Semiconductor Devices, and Method

A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state.

Semiconductor Laser Device and a Method for Manufacturing a Semiconductor Laser Device

A semiconductor laser device formed on a semiconductor substrate, the device comprising: a passivation layer arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer deposited on the upper surface of the device by atomic layer deposition and an outer layer deposited on the inner layer, and comprising a material that is inert in the presence of water.

Metal Oxide Semiconductor Films, Structures, and Methods

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

Semiconductor optical integrated device

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Method of manufacturing laser diode device

A method of manufacturing a laser diode device includes: forming semiconductor layers on top of one another and supported by a top surface of a semiconductor substrate, the semiconductor layers including an active layer, forming a separation trench by etching and removing portions of the semiconductor layers, from a top semiconductor layer to and including the active layer; scribing a groove in a bottom surface of the semiconductor substrate, directly opposite and along the separation trench; and propagating a crack from the groove, splitting the semiconductor substrate along the groove and forming a cleaved surface extending from the bottom surface of the semiconductor substrate to a bottom surface of the separation trench.

Method to switch emission wavelength of tunable laser diode

The method to change the emission wavelength of a tunable LD is disclosed. In an ordinary state, the method monitors conditions not only relating to determine the emission wavelength but conditions independent of the emission wavelength by an ordinary A/D-C implemented within the controller. Responding to an instruction to switch the emission wavelength, the controller only monitors the former conditions affecting the determination of the emission wavelength. The sampling rate of the ordinary A/D-C is equivalently enhanced without installing an additional A/D-C.

Optical elements, method of replicating optical elements, particularly on a wafer level, and optical devices

Integrated multiple optical elements may be formed by bonding substrates containing such optical elements together or by providing optical elements on either side of the wafer substrate. The wafer is subsequently diced to obtain the individual units themselves. The optical elements may be formed lithographically, directly, or using a lithographically generated master to emboss the elements. Alignment features facilitate the efficient production of such integrated multiple optical elements, as well as post creation processing thereof on the wafer level.

High Power Semiconductor Laser Diodes

A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEon a submount having a second coefficient CTEand a cooler having a third coefficient CTE. The submount/cooler assembly shows an effective fourth coefficient CTEdiffering from CTE. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEis selected to be either lower than both CTEand CTEor is selected to be between CTEand CTE. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 μm thickness and a Mo layer of 100-400 μm thickness, or a single material with a varying CTE. Both result in a CTEvarying across the submount's thickness. 1. A method for making a high power laser source of more than one W , said laser source including a bar of laser diodes having a light-emitting active semiconductor region , a cooling element and a submount between said laser bar and said cooling element ,{'sub': 'bar', 'said laser bar having a first coefficient of thermal expansion (CTE),'}{'sub': 'sub', 'said submount having a second coefficient of thermal expansion (CTE),'}{'sub': 'cool', 'said cooling element having a third coefficient of thermal expansion (CTE), and'}{'sub': 'eff', 'a submount/cooler assembly consisting of said submount and said cooling element, said submount/cooler assembly having an effective fourth coefficient of expansion (CTE),'}wherein{'sub': eff', 'bar', 'eff', 'bar, 'selecting said fourth coefficient (CTE) different by a predetermined amount from said first coefficient (CTE), CTE≠CTE,'}hard soldering said bar of laser diodes to said submount andhard soldering said submount to said cooling element,thereby stressing said laser bar's active region to effect a deformation of its semiconductor crystal lattice.2. The method according to claim 1 , wherein{'sub': bar', 'eff, 'the predetermined amount of difference between the first coefficient (CTE) and ...

Light emitting systems

A laser diode grid element comprising laser diodes arranged along a corresponding substantially flat surface; and a collimator for each laser diode for generating collimated light beams substantially perpendicular on the respective substantially flat surface. The laser diodes are comprised in standard packages including a base plate serving as cooling surface of the laser diode, a metal housing arranged on the base plate to protect the laser diode, and at least two driving pins which extend from the laser diode through the base plate and which are used for driving the laser diode within the package. The laser diode grid element includes a heat sink arranged in contact with the base plates, and the at least two driving pins of each laser diode extend at least partially through the heat sink. Also provided are light emitting systems comprising such grid elements, and an optical component for use in such system.

Ultraviolet laser

A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of β-BaB 2 O 4 (β-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Short light pulse generating device, terahertz wave generating device, camera, imaging device, and measuring device

A short light pulse generating device includes a light pulse generating part, a first pulse compressing part, a second pulse compressing part, and an amplifying part. The light pulse generating part is configured to generate light pulses, the light pulse generating part being a super luminescent diode. The first pulse compressing part is configured to perform pulse compression based on saturable absorption on the light pulses generated by the light pulse generating part. The second pulse compressing part is configured to perform pulse compression based on group velocity dispersion compensation on the light pulses that underwent the pulse compression by the first pulse compressing part. The amplifying part is provided between the first pulse compressing part and the second pulse compressing part, and configured to amplify the light pulses that underwent the pulse compression by the first pulse compressing part.

Method of fabricating optoelectronic devices directly attached to silicon-based integrated circuits

Hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits. A multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. A sacrificial separation layer is employed between the optical components and the mother semiconductor substrate. The transfer of the optical components to a carrier substrate is followed by the elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate.

METHOD FOR FABRICATING OPTICAL DEVICE

A method for fabricating an optical device including: a first step of preparing a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness, a second step of mounting the carrier on a temperature control device after the first step, and a third step of mounting a first optical component on the first area of the carrier after the second step. 1. A method for fabricating an optical device comprising:a first step of preparing a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness;a second step of mounting the carrier on a temperature control device after the first step; anda third step of mounting a first optical component on the first area of the carrier after the second step.2. The method as claimed in claim 1 , wherein:the second step is carried out by soldering; andthe third step is carried out by laser welding.3. The method as claimed in claim 1 , wherein the first optical component is an optical isolator.4. The method as claimed in claim 1 , further comprising a fourth step of mounting a second optical component on a third area of the carrier claim 1 , the third area having a thickness larger than the first thickness.5. The method as claimed in claim 4 , wherein the second optical component is a semiconductor laser.6. The method as claimed in claim 1 , wherein the temperature control device has a structure in which a plurality of peltier elements are sandwiched between an upper plate and a lower plate.7. The method as claimed in claim 2 , wherein a solder is made of SnAgCu-based material.8. The method as claimed in further ...

QUANTUM CASCADE LASER SOURCE WITH ULTRABROADBAND SPECTRAL COVERAGE

A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions. 1. A quantum cascade laser (QCL) , comprising:a first gain region configured to output a first optical mode;a second gain region configured to output a second optical mode; andat least one spacer layer disposed between the first gain region and the second gain region, the at least one spacer layer having sufficient dimension such that the first optical mode and the second optical mode do not appreciably overlap.2. The QCL of claim 1 , wherein the at least one spacer layer comprises InP.3. (canceled)4. The QCL of claim 1 , comprising at least two groups of identical gain stages spatially separated in order to reduce an intracavity power density experienced by at least one of the identical gain stages resulting in a reduction of gain saturation.5. The QCL of claim 1 , wherein the first gain region comprises a first plurality of heterogeneous gain stages claim 1 , each of the first plurality of heterogeneous gain stages configured to provide gain in a first energy range claim 1 , and wherein the second gain region comprises a second plurality of heterogeneous gain stages claim 1 , each of the second plurality of heterogeneous gain stages configured to provide gain in a second energy range.6. The QCL of claim 5 , ...

Laser Light Source and Method for Producing a Laser Light Source

A laser light source comprises, in particular, a semiconductor layer sequence () having an active region () and a radiation coupling-out area () having a first partial region () and a second partial region () different than the latter, and a filter structure (), wherein the active region () generates, during operation, coherent first electromagnetic radiation () having a first wavelength range and incoherent second electromagnetic radiation () having a second wavelength range, the coherent first electromagnetic radiation () is emitted by the first partial region () along an emission direction (), the incoherent second electromagnetic radiation () is emitted by the first partial region () and by the second partial region (), the second wavelength range comprises the first wavelength range, and the filter structure () at least partly attenuates the incoherent second electromagnetic radiation () emitted by the active region along the emission direction (). 2. The laser light source as claimed in claim 1 , wherein the at least one first filter element has an angle-dependent and/or a wavelength-dependent transmissivity for electromagnetic radiation claim 1 , and wherein the transmissivity of the first filter element decreases with increasing angle with respect to the emission direction and/or with increasing deviation from the first wavelength range.3. The laser light source as claimed in claim 2 , wherein the at least one first filter element comprises a Bragg mirror.4. The laser light source as claimed in claim 3 , wherein the Bragg mirror has a wavelength-dependent reflectivity having a global primary maximum and at least one local secondary maximum claim 3 , and wherein the local secondary maximum lies in the first wavelength range.515. The laser light source as claimed in claim 2 , wherein the at least one first filter element comprises an etalon or an optical band edge filter.6. The laser light source as claimed in claim 2 , wherein the semiconductor layer sequence ...

METHOD FOR MANUFACTURING AN OPTICAL UNIT

Disclosed is a method for manufacturing an optical unit, including a step of bringing two side face portions of a ceramic package into contact with two contact portions of a jig, a step of placing plural light-receiving and light-emitting elements in a predetermined region of the ceramic package with reference to the contact portions of the jig, and a step of connecting the plural light-receiving and light-emitting elements to a wiring line part formed in the ceramic package by using a bonding wire, wherein at least one of the plural light-receiving and light-emitting elements is placed between one of the two contact portions of the jig and another one of the plural light-receiving and light-emitting elements in the step of placing the plural light-receiving and light-emitting elements. 1. A method for manufacturing an optical unit , comprising:a step of bringing two side face portions of a ceramic package into contact with two contact portions of a jig;a step of placing plural light-receiving and light-emitting elements in a predetermined region of the ceramic package with reference to the contact portions of the jig; anda step of connecting the plural light-receiving and light-emitting elements to a wiring line part formed in the ceramic package by using a bonding wire,wherein at least one of the plural light-receiving and light-emitting elements is placed between one of the two contact portions of the jig and another one of the plural light-receiving and light-emitting elements in the step of placing the plural light-receiving and light-emitting elements.2. The method for manufacturing an optical unit as claimed in claim 1 , wherein the plural light-receiving and light-emitting elements include a light-emitting element and a light-receiving element claim 1 , and the light-receiving element is placed between one of the two contact portions of the jig and the light-emitting element in the step of placing the plural light-receiving and light-emitting elements.3. The ...

LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME

A light emitting device includes a substantially cuboid package made up of a molded article and a lead that is embedded in the molded article, and a light emitting element that is installed in the package. The lead has a connector where the light emitting element is installed, and a terminal part and an exposed part that are linked to the connector. The package has a bottom face, a front face that is a light emission face contiguous with the bottom face, and a rear face that is contiguous with the bottom face and is opposite the front face. The first terminal part and the exposed part are linked to the rear face side of the connector are exposed from the molded article and contiguous with the bottom face and the rear face, and are isolated at the bottom face. 1. A light emitting device , comprising:a package constituted by a molded article and a lead, the lead being embedded in the molded article, the package formed in a substantially cuboid shape; anda light emitting element installed in the package,the lead has a connector, a terminal part and an exposed part, the light emitting element mounted on the connector, the terminal part and the exposed part linked to the connector,the package having a bottom face, a light emission face contiguous with the bottom face, and a rear face contiguous with the bottom face, the rear face being opposite the light emission face, andthe terminal part and the exposed part linked to a rear face side of the connector, the terminal part and the exposed part continuously exposed from the molded article at the bottom face and rear face, the terminal part and the exposed part being apart from each other at the bottom face.2. The light emitting device according to claim 1 , whereinthe package has an opening formed in the light emission face, and sealing resin that fills the opening, andthe connector is exposed in an interior of the opening.3. The light emitting device according to claim 1 , whereinthe lead has an extension that is linked ...

System for managing thermal conduction on optical devices

The system includes an optical device having both optical components and one or more waveguides on a base. The system also includes a heat sink and a zone definer contacting the base and the heat sink. The zone definer is configured to conduct thermal energy from the optical device to the heat sink. The zone definer includes a thermal insulator having a lower thermal conductivity than both the heat sink and the base. The zone definer also includes a thermal via that extends through the thermal insulator. A via medium is positioned in the thermal via and has a higher thermal conductivity than the thermal insulator. The via medium is located under one of the optical components.

LIGHT EMITTING DEVICE

A light emitting device includes: a first light emitting element mounting unit including: a first substrate; a first light emitting element on a first surface of the first substrate; and a first substrate holder which includes a first column, and a first protrusion which extends from the first column toward the first light emitting element and bonded to the first surface of the first substrate; and a second light emitting element mounting unit including: a second substrate; a second light emitting element mounted on a first surface of the second substrate; and a second substrate holder which includes: a second column, and a second protrusion which extends from the second column toward the second light emitting element and bonded to the first surface of the second substrate. The second light emitting element mounting unit is stacked on the first light emitting element mounting unit. 1. A light emitting device comprising: a first substrate made of a conductive material and comprising a first surface and a second surface opposite to the first surface;', 'a first light emitting element configured to emit light and mounted on the first surface of the first substrate; and', a first column which faces a side surface of the first substrate and extends in a thickness direction of the first light emitting element and the first substrate; and', 'a first protrusion which extends from the first column toward the first light emitting element and which is bonded to the first surface of the first substrate;, 'a first substrate holder which supports the first substrate and comprises], 'a first light emitting element mounting unit comprising a second substrate made of a conductive material and comprising a first surface and a second surface opposite to the first surface;', 'a second light emitting element configured to emit light and mounted on the first surface of the second substrate; and', a second column which faces a side surface of the second substrate and extends in a ...

Directly-coupled wavelength-tunable external cavity laser

Disclosed is a directly-coupled wavelength-tunable external cavity laser including a gain medium that generates an optical signal by an applied bias current; an optical waveguide structure that is coupled to the gain medium to form a minor surface and causes lasing in the mirror surface when the applied bias current has a threshold or higher; and a radio frequency transmission medium that adds a radio frequency signal to the applied bias current to adjust an operating speed of the optical signal.

Small packaged tunable laser assembly

A tunable laser configured in a small package coupled to a printed circuit board. The tunable laser includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. An optical output interface is positioned at the second end of the housing and configured to transmit a continuous wave optical beam. A beam splitter and photodiode is disposed in the path of the laser beam for determining the emitted intensity of the laser beam, and an optical isolator is positioned downstream of the beam splitter to prevent the incoming light from the beam splitter from reflecting back though the beam splitter and into the cavity of the laser.

Hybrid laser light sources for photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

Semiconductor laser device

A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.

Laser architectures

Disclosed herein are architectures for VCSEL systems. By using high power IR VCSEL element(s), a bulk doubling material can be used to double the IR light and generate visible light (red, green, blue, or UV light) in a cavity, in either continuous wave (CW) or pulsed mode. The reflectivity of the output distributed Bragg reflector (DBR) of these VCSELs can be designed to increase the power in the cavity, rather than the power in the VCSEL laser. By enabling the use of a bulk doubling material in the cavity and directly doubling the VCSEL the device can be inexpensive, simpler, high efficiency, better reliability, and vastly improved manufacturing and alignment tolerances. There are a number of cavity architectures that can be used to double the IR light from the VCSEL(s). The VCSEL(s) can be single elements, or arrays with high intensity elements.

HYBRID SILICON VERTICAL CAVITY LASER WITH IN-PLANE COUPLING

A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer. 1. An apparatus , comprising:a silicon on insulator (SOI) substrate;a silicon waveguide on the SOI substrate;a grating coupler fabricated on the silicon waveguide; anda vertically oriented III-V semiconductor device bonded to the SOI substrate above the grating coupler, wherein the grating coupler is to couple vertically oriented light to, or from, the III-V semiconductor device laterally from, or to, horizontally oriented light propagated by the silicon waveguide.2. The apparatus as recited in the vertical III-V semiconductor device comprises:an n-contact layer;a p-contact layer; anda quantum well layer comprising a III-V semiconductor material disposed between the n-contact layer and p-contact layer.3. The apparatus as recited in claim 2 , wherein the vertical III-V semiconductor device further comprises:a superlattice layer between the quantum well layer and the n-contact layer to protect the quantum well layer during bonding.4. The apparatus as recited in wherein the n-contact layer comprises a distributed Bragg structure.5. The apparatus as recited in wherein the p-contact layer comprises a distributed Bragg structure.6. The apparatus as recited in wherein the vertical III-V semiconductor device is a vertical cavity surface emitting laser (VCSEL) and emits light at wavelengths greater than 980 nm claim 1 , and wherein the grating coupler is to couple vertically oriented light from the VCSEL into the waveguide.7. The apparatus of claim 6 , wherein a top one of the n-contact and the p- ...

Method for the reuse of gallium nitride epitaxial substrates

A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

SEMICONDUCTOR LASER WITH CATHODE METAL LAYER DISPOSED IN TRENCH REGION

A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction. 1. A laser diode , comprising:a substrate;a junction layer disposed on the substrate, the junction layer forming a quantum well of the laser diode;a junction surface comprising at least one channel that extends through the junction layer to the substrate, the at least one channel defining an anode region and a cathode region;a cathode electrical junction disposed on the junction surface at the cathode region;an anode electrical junction disposed on the junction surface and coupled to the junction layer at the anode region; anda cathode metal layer disposed in at least a trench region of the at least one channel, the cathode metal layer coupling the substrate to the cathode electrical junction.2. The laser diode of claim 1 , wherein the trench region is elongated along a laser output direction of the laser diode.3. The laser diode of claim 2 , wherein the trench region extends substantially from an emission edge to an opposing edge of the laser diode.4. The laser diode of claim 1 , wherein the at least one channel is elongated along a laser output direction of the laser diode.5. The laser diode of claim 1 , wherein the at least one channel comprises two channels claim 1 , wherein the anode region is disposed between the two channels.6. The laser diode of claim 5 , ...

Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers

A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

Human placental collagen compositions, and methods of making and using the same

The present invention provides compositions comprising human placental telopeptide collagen, methods of preparing the compositions, methods of their use and kits comprising the compositions. The compositions, kits and methods are useful, for example, for augmenting or replacing tissue of a mammal.

Light emitting device

A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

LASER CRYSTAL COMPONENTS JOINED WITH THERMAL MANAGEMENT DEVICES

A method for preparing a surface of a YAG crystal for thermal bonding includes performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal. Also, a micro-chip device having a YAG crystal whose surface is prepared with the above disclosed method is provided and a device for forming a metallization pattern on a surface of the YAG crystal is provided. 18-. (canceled)9. A micro-chip laser device comprising:a pump laser diode configured to emit a laser beam; performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and', 'joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal;, 'a YAG crystal having a surface prepared by'}wherein the YAG crystal is configured to produce pulsed light output; andwherein the thermal management device is thermally coupled to the pump laser diode and the YAG crystal and is configured to dissipate heat from the pump laser diode and the YAG crystal.10. The device of claim 9 , wherein the YAG crystal comprises at least two dielectric interference coatings configured to provide high laser damage resistance.11. The device of claim 10 , wherein the two dielectric interference coatings comprises an anti-reflection dielectric coating and a dichroic dielectric coating.12. The device of claim 10 , wherein the dichroic dielectric coating comprises a high reflection portion and an anti-reflection portion so as to reflect some wavelengths of ...

LASER DIODE ARRAY AND LASER DIODE UNIT

A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another. 1. A laser diode array comprising:a heat dissipator;a plurality of submounts disposed independently of one another on the heat dissipator; anda plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.2. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are arranged at equal intervals.3. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are arranged at intervals of about 2 mm to about 10 mm both inclusive.4. The laser diode array according to claim 1 , wherein a half-width of a superimposition of wavelength spectra of the plurality of laser diode devices is about 2 nm or more.5. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are electrically connected to one another in series.6. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are electrically connected to one another in parallel.7. The laser diode array according to claim 1 , wherein the plurality of laser diode devices are configured of the same material-based devices.8. The laser diode array according to claim 1 , wherein the laser diode devices are made of an AlGaInP-based material.9. The laser diode array according to claim 1 , wherein the laser diode devices are made of a GaN-based material.10. The laser diode array according to claim 1 , wherein the plurality of laser diode devices include two ...

Epitaxial-Side-Down Mounted High-Power Semiconductor Lasers

A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder. 1. A laser apparatus configured for epitaxial-side-down mounting on a heat sink , comprising:a semiconductor laser structure formed on a substrate and at least one post also formed on the substrate, the post being separated from the laser structure by at least one channel therebetween, a maximum height of the at least one post being approximately the same as a maximum height of the laser structure, the laser apparatus being configured to be mounted epitaxial-side-down on the heat sink by means of solder applied to the laser structure and the at least one post;wherein the at least one channel between the post and the laser structure provides an adequate initial empty volume for the volume of solder displaced by the ridge and post to occupy and flow through without contacting a sidewall of the laser structure.2. The laser apparatus according to claim 1 , wherein the laser structure and all of the at least one posts are coated with a heat-spreading material layer to form a coated laser structure and coated posts claim 1 , a thickness of the heat-spreading material being configured such that all of the at least one coated posts and the coated laser ...

EPITAXIAL STRUCTURES ON SIDES OF A SUBSTRATE

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop. 112-. (canceled)13. A semiconductor device comprising a substrate , the substrate comprising a first epitaxial structure on a first side of the substrate and a second epitaxial structure on a second side of the substrate , each of the first and second epitaxial structures comprising an etch stop , an epitaxial layer , and a carrier medium , the first side being on an opposite side of the substrate from the second side.14. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises one or more laser cells.15. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises one or more light emitting diode cells.16. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises one or more infrared sensor cells.17. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises one or more inverted metamorphic structures.18. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises one or more solar cells.19. The semiconductor device of claim 13 , wherein the carrier mediums comprise at least one of silicon claim 13 , metal claim 13 , glass claim 13 , gold claim 13 , silver claim 13 , copper claim 13 , nickel claim 13 , titanium claim 13 , and platinum.20. The semiconductor device of claim 13 , wherein the first epitaxial structure comprises an array of individual cells.21. A method of fabricating ...

METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE

A method for producing an optical semiconductor device includes the steps of forming a semiconductor structure; forming a mask on the semiconductor structure; etching the semiconductor structure with the mask to form first and second stripe-shaped grooves and a mesa portion; forming a protective film on a top surface and side surfaces of the mesa portion; forming a resin portion on the protective film; etching the resin portion and the protective film formed on the top surface; forming an upper electrode on the top surface; and forming an electrical interconnection on the resin portion. The resin portion has an inclined surface region that rises from a first point above the mesa portion toward a second point above the first stripe-shaped groove. The step of etching the resin portion and the protective film includes the substeps of etching the resin portion and simultaneously etching the resin portion and the protective film. 1. A method for producing an optical semiconductor device , comprising the steps of:forming a semiconductor structure including a stacked semiconductor layer;forming a mask on the semiconductor structure, the mask having a first opening and a second opening, each of the first opening and the second opening extending in a first direction, the first opening and the second opening being separated from each other in a second direction orthogonal to the first direction;etching the semiconductor structure with the mask to form a first stripe-shaped groove, a second stripe-shaped groove, a mesa portion, and external regions on the semiconductor structure, the mesa portion being located between the first stripe-shaped groove and the second stripe-shaped groove, the external regions being located on sides of the first and second stripe-shaped grooves opposite sides on which the mesa portion lies;forming a protective film on a top surface and side surfaces of the mesa portion;forming a resin portion on the protective film, the resin portion covering the ...

Capping system

A capping system includes: a moving portion moving a stem, on which an optical semiconductor element is mounted, horizontally; a fixer fixing a cap having a window, on the stem; a camera taking an image of the cap and the stem from above the cap and the stem; a detector detecting whether the optical semiconductor element is present within a visual field of the camera; and a searching action controller controlling the moving portion to move the stem so the detector searches the optical semiconductor element. The searching action controller causes searching radially and outwardly from a search starting point.

LASER ELEMENT HAVING A THERMALLY CONDUCTIVE JACKET

A laser element includes a laser rod and a thermally conductive jacket on an exterior surface of the laser rod. The thermally conductive jacket assists in dissipating heat generated in the laser rod during the application of pump energy to the laser rod. 1. A laser element for use in a laser system comprising:a laser rod; anda thermally conductive jacket on an exterior surface of the laser rod.2. The laser element of claim 1 , wherein:the laser rod has a central axis; andthe jacket surrounds the exterior surface of the laser rod extending along the central axis.3. The laser element of claim 2 , wherein the thermally conductive jacket is bonded to the exterior surface.4. The laser element of claim 3 , wherein the thermally conductive jacket comprises a metal selected from the group consisting of silver claim 3 , gold claim 3 , copper alloy claim 3 , and aluminum nitride.5. The laser element of claim 3 , wherein the thermally conductive jacket has a thickness in the range of 0.002-0.020 inch.6. The laser element of claim 1 , wherein the laser rod is selected from the group consisting of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser rod claim 1 , a thulium-doped yttrium aluminum garnet (Tm:YAG) laser rod claim 1 , a ytterbium-doped yttrium aluminum garnet (Yb:YAG) laser rod claim 1 , and a holmium-doped yttrium aluminum garnet (Ho:YAG) laser rod.7. The laser element of claim 1 , wherein the thermally conductive jacket comprises a reflective surface facing the exterior surface of the laser rod.8. A laser system comprising: a laser rod; and', 'a thermally conductive jacket on an exterior surface of the laser rod;, 'a laser element comprisinga chiller configured to deliver a flow of cooling liquid over the thermally conductive jacket; anda pump source configured to pump an end of the laser rod with pump energy; the laser rod generates laser light in response to the pump energy; and', 'heat from the laser rod is conducted through the jacket to the flow of ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer. 1. A semiconductor laser device comprising:a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion,wherein the emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base,wherein the first conductive layer has an external connection region,wherein the second conductive layer is formed in a different region from the external connection region of the first conductive layer,wherein a thickness of the second conductive layer is greater than a thickness of the first conductive layer,wherein the emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer,wherein the emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer, andwherein the emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end ...

Laser emitting chip package

A laser emitting chip package includes a circuit board, a laser emitting chip, and at least three gold balls. The circuit board includes at least two substrate-pad areas. The laser emitting chip includes at least two chip-pad areas. Each of the chip-pad areas spatially corresponds to a respective one of the substrate-pad areas. The at least three gold balls are explanted on the at least two chip-pad areas. The laser emitting chip is supported on the circuit board by the at least three gold balls in a triangular or square arrangement between the chip-pad areas and the substrate-pad areas. The laser emitting chip is electrically connected to the circuit board through the gold balls.

Semiconductor laser assembly and method for producing a semiconductor laser assembly

A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Laser driving circuit, laser driving method, projector apparatus and apparatus which uses laser light

Disclosed herein is a laser driving circuit, including: a plurality of laser driving video current generation circuits configured to generate a plurality of kinds of laser driving current for driving a plurality of laser light sources configured to emit laser light having wavelengths different from each other based on an inputted video signal; a high frequency superposition section configured to superpose a high frequency signal having a frequency higher than a frequency band of the video signal on the laser driving current generated by the laser driving video current generation circuits; and a waveform correction section configured to correct a waveform of the high frequency signal.

Laser light source module

The present invention provides a laser light source module thereby providing better prevention against actions taken to use the laser light for purposes other than the intended purpose, and a laser light source module according to the present invention provides a laser light source module including a laser element that emits laser light, the laser light source module being formed by a combination of a plurality of members, the laser light source module including: a laser element drive circuit including a memory that stores a password, said laser element drive circuit making said laser element emit laser light if an input password that has been input matches the password stored in said memory; and a laser element destruction mechanism that, if the plurality of members are separated, destroys said laser element.

COMPOUND ENCLOSURE FOR OPTICAL APPARATUS

An optically pumped semiconductor laser is assembled in an enclosure comprising a base, a first mounting frame attached to the base, a second mounting frame attached to the first mounting frame and a cover attached to the second mounting frame. The assembly base, frames, and cover forms an undivided enclosure, with the frames contributing to walls of the enclosure. Components of the laser are assembled sequentially on the base and the frames. The frames are irregular in height to permit flexibility in the mounting-height of components. This reduces the extent to which compactness of the enclosure is limited by any one component. 1. Optical apparatus , the optical apparatus including a plurality of components and being contained in an enclosure comprising:a base-member, configured to provide a floor of the enclosure;one or more open frame-members stacked on the base-member and forming walls of the enclosure;a cover-member covering the enclosure; andwherein at least one of the components of the apparatus is mounted on a frame-member.2. The apparatus of claim 1 , wherein the optical apparatus includes a laser-resonator formed by at least two minors claim 1 , a gain-medium within the laser-resonator claim 1 , and a diode-laser array for optically pumping the gain-medium.3. The apparatus of claim 2 , wherein the diode-laser array is attached to the base member claim 2 , and at least one of the resonator minors is attached to a frame member.4. The apparatus of wherein there are first and second frame members claim 1 , with the first frame member attached to the base-member claim 1 , the second frame-member attached to the first frame member claim 1 , and the cover-member attached to the second frame member.5. The apparatus of claim 4 , wherein the optical apparatus is an intra-cavity doubled optically pumped semiconductor (OPS) laser having an OPS-structure including a gain-structure surmounted by a mirror-structure claim 4 , a laser-resonator formed between the mirror- ...

Housing and Method for Producing a Housing

A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed. 115-. (canceled)16. A housing for an optoelectronic semiconductor component , the housing comprising:a housing body having a mounting plane and a leadframe having a first connection conductor and a second connection conductor;wherein the housing body molds around the leadframe in regions; andwherein the leadframe has a main extension plane running obliquely or perpendicularly with respect to the mounting plane.17. The housing according to claim 16 , wherein the housing body has a first main face claim 16 , wherein the first connection conductor and the second connection conductor project from the housing body on a portion of the first main face claim 16 , and wherein a region of the first connection conductor that projects from the housing body on the portion of the first main face is provided for fixing a semiconductor chip.18. The housing according to claim 17 , wherein the first main face runs along the mounting plane.19. The housing according to claim 16 , wherein a side face of the first connection conductor runs along the main extension plane and is provided for fixing a semiconductor chip.20. The housing according to claim 16 , wherein the main extension plane of the leadframe is embodied completely in planar fashion.21. The housing according to claim 16 , wherein the leadframe has a thickness of at least 0.5 mm.22. The housing according to claim 16 , wherein the housing body comprises a supporting element having a bearing face claim 16 , wherein the mounting plane is ...