Kompensierte Laserstruktur für analoge Übertragungssysteme.

Herstellungsverfahren einer optischen Halbleitervorrichtung

A semiconductor laser device

A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves ...

Light emitting semiconductor methods and devices

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

QUANTUM CASCADE LASER ELEMENT

Buried type semiconductor laser device

A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

Co-modulation of DBR laser and integrated optical amplifier

In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source.

SEMICONDUCTOR ELEMENT

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and yl>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where 0≤x2≤about 0.02 and about 0.03≤y2≤about 0.07.

Compensated laser structure for analog communication applications

VCSEL mit elliptischer Apertur mit reduziertem RIN

Ein VCSEL kann Folgendes umfassen: eine elliptische Oxidapertur in einem oxidierten Bereich, der sich zwischen einem aktiven Bereich und einer Emissionsoberfläche befindet, wobei die elliptische Apertur einen kurzen Radius und einen langen Radius mit einem Radienverhältnis (kurzer Radius)/(langer Radius) zwischen 0,6 und 0,8 hat, wobei der VCSEL ein relatives Intensitätsrauschen (RIN) von weniger als -140 dB/Hz hat. Der VCSEL kann eine elliptische Emissionsapertur mit den gleichen Abmessungen wie die elliptische Oxidapertur enthalten. Der VCSEL kann einen elliptischen Kontakt mit einer elliptischen Kontaktapertur enthalten, wobei sich der elliptische Kontakt um die elliptische Emissionsapertur herum befindet. Der elliptische Kontakt kann C-förmig sein. Der VCSEL kann einen oder mehrere Gräben seitlich des oxidierten Bereichs enthalten, wobei der eine oder die mehreren Gräben eine elliptische Form bilden, wobei der oxidierte Bereich eine elliptische Form hat. Der eine oder die mehreren Gräben ...

Light emitting semiconductor methods and devices

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

X-ray metrology system with broadband laser produced plasma illuminator

Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

Optical sub-carrier multiplex television transmission system using a linear laser diode

An amplitude-modulated vestigial-sideband, television channel sub-carrier multiplexed optical fiber transmission system includes a laser diode operating linearly throughout the desired range of multiplex frequencies. Such linear laser diode operation is accomplished by limiting leakage current within the laser diode to a very low level. The composite second-order distortion in the optical output signal from the laser diode is down typically 50 db from the video carrier for each channel. For some laser diodes that exhibit slow turn-on in the L-I characteristic, there is a point of inflection in the L-I curve. Operation with the laser biased at or near this point results in extremely linear performance, even though the laser may have insufficient blocking of leakage current to otherwise produce acceptable linearity.

HALBLEITERLASERVORRICHTUNG.

VCSEL WITH ELLIPTICAL APERTURE HAVING REDUCED RIN

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

発光半導体方法および素子

レーザダイオード構造およびサブキャリヤ多重化伝送システム

HALBLEITERLASERVORRICHTUNG VOM VERGRABENEN TYP.

Laser diode assembly and a method of assembling such a laser diode assembly

A laser diode assembly 10 comprising one or more laser diodes (optionally a long cavity, broad area, single edge type, with double heterostructure), mounted on a carrier 14. The laser diode assembly may comprise a plurality of laser diodes interconnected and arranged in series. The carrier 14 includes a heat spreader 14a for example, comprising Chemical Vapour Deposition, CVD, diamond, and a layer of solder 16 interposed between the one or more laser diodes and the carrier, the layer of solder 16 comprising silver.

LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

A method for producing light emission from a two terminal semiconductor device with improved efficiency, in-cludes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semi-conductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribu-tion in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency opera-tion.

Folded lasers system

A folded laser system having an optical axis, the laser system comprising: (I) a coherent light source; (II) a reflector; (III) a lens component situated between the light source and the reflector; and (IV) a non-linear optical crystal, wherein the light source and the non-linear optical crystal are separated by a distance d > 50 m. The lens component is positioned to provide a collimated beam when intercepting light from the light source, such that the collimated beam is at an angle ' to the optical axis, the reflector is situated to intercept the collimated beam and to reflect the collimated beam to the non-linear optical crystal through the lens; and the lens component is structured to provide an image on the non-linear optical crystal.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

The invention relates to a method for producing a radiation-emitting component (1). According to said method, a field profile of a near field (101, 201) is set to extend at a right angle to a main axis of radiation of the component. The field profile of the near field is used to determine a refractive index profile (111, 211) along said direction. A design is determined for the component such that the component has the previously determined refractive index profile. The component is configured according to the previously determined design. The invention also relates to a radiation-emitting component.

LICHTEMISSIONS-VORRICHTUNG MIT HALBLEITERN.

Light emitting semiconductor methods and devices

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

OPTICAL SUB-CARRIER MULTIPLEX TELEVISION TRANSMISSION SYSTEM USING A LINEAR LASER DIODE

Wavelength estimation device, light-source device, image display apparatus, object apparatus, wavelength estimation method, and light-source control method

A wavelength estimation device including a light detector to receive light emitted from a light source and an estimation unit. The estimation unit estimates a wavelength of the light based on an amount of light received by the light detector.

SEMICONDUCTOR ELEMENT

　六方晶系ＩＩＩ族窒化物半導体で形成された半極性面を有する半導体基板と、Ｉｎ ｘ１ Ａｌ ｙ１ Ｇａ １－ｘ１－ｙ１ Ｎ（ｘ１＞０、ｙ１＞０）からなる第１導電型の第１クラッド層と、Ｉｎ ｘ２ Ａｌ ｙ２ Ｇａ １－ｘ２－ｙ２ Ｎ（０≦ｘ２≦０．０２、０．０３≦ｙ２≦０．０７）からなる第２導電型の第２クラッド層と、前記第１クラッド層及び前記第２クラッド層の間に形成される発光層とを有し、前記半導体基板の半極性面上に形成されたエピタキシャル層と、を備える半導体素子。

VCSEL WITH ELLIPTICAL APERTURE HAVING REDUCED RIN

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches. 1. A VCSEL comprising:an oxidized region that is located between an active region and an emission surface;one or more trenches lateral of the oxidized region and positioned so as to provide the oxidized region with an elliptical shape so as to form an elliptical oxide aperture.2. The VCSEL of claim 1 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.3. The VCSEL of claim 2 , further comprising an elliptical contact having an elliptical contact aperture therein claim 2 , the elliptical contact disposed around the elliptical emission aperture.4. The VCSEL of claim 3 , wherein the elliptical contact is C-shaped.5. The VCSEL of claim 1 , wherein the elliptical oxide aperture has a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.64 to about 0.75.6. The VCSEL of claim 1 , wherein the one or more trenches are trapezoidal shaped trenches.7. The VCSEL of claim 2 , further comprising a mesa having the elliptical oxide aperture claim 2 , oxidized region claim 2 , elliptical ...

Method of fabricating a group III-V semiconductor light emitting device with reduced piezoelectric fields and increased efficiency

An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the ...

Light emitting semiconductor methods and devices

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided.

Semiconductor light emitting device

A semiconductor laser in which an InGaAsP active layer serving as light emitting layer and formed in the shape of a stripe on the surface of a flat InP first clad layer, and an InP second clad layer that is wider than the InGaAsP active layer and formed on the InGaAsP active layer are buried in an InP burying layer. The stripe direction is the <011> direction, an etched mirror is formed in the vicinity of the end of the active layer, and an opto-electronic integrated circuit is formed by integrating the electric device and photo detecting device on the same substrate. The substrate is a semi-insulating substrate, and the electric device and photo detecting device are formed on the InGaAsp or InGaAs layer formed on the InP burying layer by crystal growth.

Herstellungsverfahren einer optischen Halbleitervorrichtung

SEMICONDUCTOR LASER DEVICE

OPTICAL SUB-CARRIER MULTIPLEX TELEVISION TRANSMISSION SYSTEM USING A LINEAR LASER DIODE

An amplitude-modulated vestigial-sideband, television channel sub-carrier multiplexed optical fiber transmission system includes a laser diode operating linearly throughout the desired range of multiplex frequencies. Such linear laser diode operation is accomplished by limiting leakage current within the laser diode to a very low level. The composite second-order distortion in the optical output signal from the laser diode is down typically 50 db from the video carrier for each channel. For some laser diodes that exhibit slow turn-on in the L-I characteristic, there is a point of inflection in the L-I curve. Operation with the laser biased at or near this point results in extremely linear performance, even though the laser may have insufficient blocking of leakage current to otherwise produce acceptable linearity.

Semiconductor device

一种半导体器件，其包括：具有半极面的半导体基板，由六方III族氮化物半导体形成；第一导电类型的第一包覆层，由In x1 Al y1 Ga 1‑x1‑y1 N(其中，x1>0且y1>0)形成；第二导电类型的第二包覆层，由In x2 Al y2 Ga 1‑x2‑y2 N(其中，0≤x2≤0.02且0.03≤y2≤0.07)形成；以及在第一包覆层和第二包覆层之间形成的发光层。该半导体器件配备有在半导体基板的半极面上形成的外延层。

LIGHT-EMITTING DEVICE INCLUDING A COMPOUND SEMICONDUCTOR AND A METHOD FOR DETERMINING A COMPOUND RATIO OF THE COMPOUND SEMICONDUCTOR FOR THE LIGHT-EMITTING DEVICE, CAPABLE OF IMPROVING LIGHT-EMITTING EFFICIENCY

PURPOSE: A light-emitting device including a compound semiconductor and a method for determining a compound ratio of the compound semiconductor for the light-emitting device are provided to obtain a compound ratio of a barrier having the optimum compound ratio by obtaining the compound ratio of a well layer by the wave length of the light which the light-emitting device emits. CONSTITUTION: An active layer(103) includes a multiple quantum well layer. In the multiple quantum well, a quantum well layer including a first compound semiconductor and the barrier layer including the second compound semiconductor are alternatively formed. In the active layer, the sum total of the electric field by the spontaneous polarization and the electric field by the piezo at the quantum well layer is equal to the sum total of the electric field by the spontaneous polarization and the electric field by the piezo at the barrier layer. The N type contact layer(102) injects the electrons into the active layer ...

SEMICONDUCTOR LIGHT EMISSION SYSTEM

ABSTRACT OF THE DISCLOSURE A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part consti-tuted of said second conductive current restricting layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.

GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts.

A buried type semiconductor laser device

Strahlungsemittierendes Bauelement

Strahlungsemittierendes Bauelement umfassend einen Halbleiterkörper mit Halbleiterschichten mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (21), das eine Hauptabstrahlungsrichtung und senkrecht zur Hauptabstrahlungsrichtung ein Brechungsindexprofil aufweist, wobei – das Brechungsindexprofil senkrecht zur Abscheiderichtung der Halbleiterschichten des Halbleiterkörpers (2) verläuft, – der Halbleiterkörper Ausnehmungen (4) aufweist, die sich senkrecht zu der Hauptabstrahlungsrichtung in den Halbleiterkörper (2) hinein erstrecken, so dass das entlang der Hauptabstrahlungsrichtung gemittelte Brechungsindexprofil im Bereich der Ausnehmungen (4) zum Rand hin abnimmt, und – an einer Grenzfläche zwischen dem Halbleiterkörper und einer an diesen angrenzenden Schicht (6) ein sprunghafter Übergang (24) ausgebildet ist, an dem der Brechungsindex des Brechungsindexprofils vom Inneren des Halbleiterkörpers aus gesehen sprunghaft ansteigt. A radiation-emitting component comprising a semiconductor body having semiconductor layers with an active region (21) provided for generating radiation, which has a main emission direction and a refractive index profile perpendicular to the main emission direction, wherein The refractive index profile is perpendicular to the deposition direction of the semiconductor layers of the semiconductor body (2), - The semiconductor body has recesses (4) which extend perpendicular to the main radiation direction in the semiconductor body (2), so that the along the main emission direction averaged refractive index profile in the region of the recesses (4) decreases towards the edge, and - Formed at an interface between the semiconductor body and a layer adjacent to this (6), a sudden transition (24), at which the refractive index of the refractive index profile increases from the interior of the semiconductor body as seen by a sudden increase.

Folded lasers system

Three-dimensional finite element analysis of laser cavities

In a Finite Element Analysis (FEA) method to compute eigenmodes, time dependent dynamic mode structure, stability, beam quality, and laser power output of a laser cavity, the number of nodes of the discretization grid necessary to obtain sufficient accuracy is reduced by the use of a transformation of the differential equations describing the electromagnetic field. This removes the periodic fluctuations of the electromagnetic field from the mathematical expressions by the use of a product representation for the field variables with one term representing the periodic field oscillations, which have a scale length corresponding to the wave length, and another term representing the transformed field variables which are almost free of these small scale oscillations.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

The invention relates to a method for producing a radiation-emitting component (1). According to said method, a field profile of a near field (101, 201) is set to extend at a right angle to a main axis of radiation of the component. The field profile of the near field is used to determine a refractive index profile (111, 211) along said direction. A design is determined for the component such that the component has the previously determined refractive index profile. The component is configured according to the previously determined design. The invention also relates to a radiation-emitting component.

A SEMICONDUCTOR LASER DEVICE

반도체 이광자 흡수 현상을 이용한 다파장 레이저 펄스폭 측정 장치 및 방법

... 반도체 이광자 흡수 현상을 이용한 다파장 레이저 펄스폭 측정 장치 및 방법이 개시되며, 본원의 일 실시예에 따른 반도체 이광자 흡수 현상을 이용한 다파장 레이저 펄스폭 측정 장치는, 레이저 광을 출력하는 출력부 및 상기 레이저 광이 이광자 흡수되는 광에너지를 측정하기 위한 광 다이오드 소자를 구비하는 검출부를 포함하고, 상기 광 다이오드 소자의 유형은 상기 레이저 광의 파장에 대응하도록 결정될 수 있다.

LONG DISTANCE TRANSMISSION USING MULTI-MODE VCSEL UNDER INJECTION LOCKING

Adjustable chirp is achieved in injection-locked, 10-Gb/s directly modulated, multimode 1.55-μm VCSELs for the first time, leading to 9OX increase in standard single-mode fiber transmission distance to 90km.

Semiconductor light emission system

A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current strictured layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current strictured layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.

Kompensierte Laserstruktur für analoge Übertragungssysteme.

Optical wavelength stability control apparatus and optical transmitter

An optical transmitter includes a plurality of optical wavelength stability control apparatus, each of which is capable of compensating a wavelength drift by varying the laser diode drive current. Each of the optical wavelength stability control apparatus detects the laser diode drive current, which is controlled by an auto power control circuit, by using a laser diode drive current detector (1). The laser diode drive current is normalised by a laser diode drive current increase/decrease normalisation unit (2). A laser diode temperature control target value is generated at a compensated reference voltage generator (3a, 3b), in response to the normalised laser diode drive current, to control the current value applied to a thermoelectric cooler (12) so that the output value of a temperature monitor circuit (10) approaches a predetermined laser diode temperature control target value.

Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement

Es wird ein Verfahren zur Herstellung eines strahlungsemittierenden Bauelements (1) angegeben, bei dem ein Feldverlauf eines Nahfelds (101, 201) in einer senkrecht zu einer Hauptabstrahlungsachse des Bauelements verlaufenden Richtung vorgegeben wird. Aus dem Feldverlauf des Nahfelds wird entlang dieser Richtung ein Brechungsindexprofil (111, 211, 511) ermittelt. Für das Bauelement wird ein Aufbau ermittelt, sodass das Bauelement das zuvor bestimmte Brechungsindexprofil aufweist. Das Bauelement wird gemäß dem zuvor bestimmten Aufbau ausgebildet. Weiterhin wird ein strahlungsemittierendes Bauelement angegeben.

FOLDED LASERS SYSTEM

LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

QUANTUM CASCADE LASER ELEMENT

... [Problem] To manufacture a quantum cascade laser element having a reduced threshold current density (Jth) and an increased maximum operation temperature (Tmax). [Solution] One embodiment of the present invention provides a THz-QCL element (1000) provided with a QCL structure (100) which is a semiconductor superlattice structure (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice structure (100A) (QCL structure (100)) is provided with an active region (10) which emits THz region electromagnetic waves due to the transition of electrodes between sub-bands when voltage is applied between the pair of electrodes, for example. The active region (10) comprises repeated structural units (10U) of a thickness which includes several alternately laminated well layers (10W) and barrier layers (10B), the well layers (10W) being formed from AlxGa1-xAs (wherein 0 Подробнее

Optical device carrier

A layout of a carrier in an optical component having the carrier and an optical device is described. The layout comprises a pair of terminals, a resistor connected to a first terminal, a wire bond connected in series with the resistor for connecting the resistor to an optical device, and a first ground patch connected to a second terminal and for connecting to an optical device for providing a common ground on a first surface on a substrate on which the carrier is based, whereby the pair of terminals, the resistor, the wire bond and an optical device form an optical signal transmission system in the optical component. In the layout, an optical device is disposable on a first edge of the first ground patch which forms a substantially geometric pattern on the carrier, and the first terminal is connected to the resistor through a conductor which in combination with the resistor forms a first substantially elongated pattern on the carrier that is disposed adjacent and longitudinally orthogonal ...

METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS AND THE APPARATUS

HALBLEITERLASERVORRICHTUNG UND VERFAHREN ZU DEREN STEUERUNG.

Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement

Es wird ein Verfahren zur Herstellung eines strahlungsemittierenden Bauelements (1) angegeben. Eine Abstrahlcharakteristik im Fernfeld wird vorgegeben. Aus der vorgegebenen Abstrahlcharakteristik wird ein Brechungsindexprofil für das strahlungsemittierende Bauelement (1) in einer senkrecht zu einer Hauptabstrahlungsrichtung des Bauelements verlaufenden Richtung ermittelt. Ein Aufbau für das Bauelement wird ermittelt, sodass das Bauelement das zuvor bestimmte Brechungsindexprofil aufweist. Das Bauelement (1) wird gemäß dem zuvor bestimmten Aufbau ausgebildet. Weiterhin wird ein strahlungsemittierendes Bauelement angegeben. A method for producing a radiation-emitting component (1) is specified. A radiation characteristic in the far field is specified. From the predetermined emission characteristic, a refractive index profile for the radiation-emitting component (1) is determined in a direction perpendicular to a main emission direction of the component. A design for the device is determined so that the device has the predetermined refractive index profile. The component (1) is formed according to the previously determined structure. Furthermore, a radiation-emitting component is specified.

LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE

A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elemsnts of compound semiconductor.

Systems and methods for designing optical devices having mode selective facets

Methods for designing a mode-selective optical device including one or more optical interfaces defining an optical cavity include: defining a loss function within a simulation space encompassing the optical device, the loss function corresponding to an electromagnetic field having an operative wavelength within the optical device resulting from an interaction between an input electromagnetic field at the operative wavelength and the one or more optical interfaces of the optical device; defining an initial structure for each of the one or more optical interfaces, each initial structure being defined using a plurality of voxels; determining values for at least one structural parameter and/or at least one functional parameter of the one or more optical interfaces by solving Maxwell's equations; and defining a final structure of the one or more optical interfaces based on the values for the one or more structural and/or functional parameters.

Light emitting semiconductor methods and devices

METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS AND THE APPARATUS

An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.

LASER DIODE STRUCTURE AND SUBCARRIER MULTIPLEXING TRANSMISSION SYSTEM

PURPOSE: To improve response linearity of a laser diode by a simple structure which does not use various types of control means. CONSTITUTION: A compensation means for improving laser response linearity is incorporated in a laser diode structure, especially in wide band analog application. The compensation means includes a voltage dependent component introduced for correcting parasitic existence such as a voltage dependent resistance and a capacitance component related to diode junction. These parasitic components cause L-I related nonlinearity of laser. Nonlinearity due to existence of the parasitic components is minimized by carefully selecting a bias voltage to supply to the compensation component. It is especially preferable to use the voltage dependent resistance and the voltage dependent capacitance by combining them. COPYRIGHT: (C)1993,JPO ...

HALBLEITERLASERVORRICHTUNG UND VERFAHREN ZU DEREN STEUERUNG.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided. COPYRIGHT KIPO & WIPO 2010 ...

Buried heterostructure semiconductor laser device

A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves ...

Semiconductor light emission system

SEMICONDUCTOR LASER ELEMENT

PURPOSE: To enable high output operation by forming a laser oscillation operation section onto a semiconductor substrate, growing first buried layers having the same conductivity type as the substrate, reverse conductivity type second buried layers and the same conductivity type third buried layers to sections except a section between parallel two grooves shaped at a specific interval in succession and growing a reverse conductivity type clad layer onto the whole surface. CONSTITUTION: An N-type InP buffer layer 2, a non-doped InGaAsP active layer 3 and a P-type InP clad layer 4 are grown onto an N-type (100) InP substrate 1 successively. Patterns such as two parallel striped patterns at an interval of 2μm and in width 7μm are shaped in the <011> direction, and these layers 2, 3, 4 are etched up to the midway of the buffer layer 2, using the patterns as masks, thus forming two parallel grooves. An N-type InP first buried layer 8, a P-type InP second buried layer 5, an N-type InP third buried ...

DIRECTLY MODULATED LASER FOR PON APPLICATION

In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE

A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor.

Optical wavelength stability control apparatus and optical transmitter

An optical transmitter includes a plurality of optical wavelength stability control apparatus, each of which is capable of compensating a wavelength drift by varying the laser diode drive current. Each of the optical wavelength stability control apparatus detects the laser diode drive current, which is controlled by an auto power control circuit, by using a laser diode drive current detector (1). The laser diode drive current is normalised by a laser diode drive current increase/decrease normalisation unit (2). A laser diode temperature control target value is generated at a compensated reference voltage generator (3a, 3b), in response to the normalised laser diode drive current, to control the current value applied to a thermoelectric cooler (12) so that the output value of a temperature monitor circuit (10) approaches a predetermined laser diode temperature control target value.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

GROUP III NITRIDE SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

Provided is a group III nitride semiconductor laser element having a reduced forward voltage. The p-type cladding layer comprises a p-type dopant and n-type impurities such that the concentration of the p-type dopant in the p-type cladding layer is greater than the concentration of n-type impurities. The photoluminescence (PL) spectrum as measured using excitation light stronger than the band gap of the p-type cladding layer has a band edge emission peak and a donor-acceptor pair emission peak. The difference (E (BAND) - E (DAP)) between the energy E (BAND) of the band edge emission peak value in the PL spectrum and energy E (DAP) of the donor-acceptor pair emission peak in the PL spectrum has a correlation with the forward drive voltage (Vf) of a group III nitride semiconductor element 11. When this energy difference (E (BAND) - E (DAP)) is 0.42 eV or less, there is a reduction in the drive voltage related to forward voltage application of the group III nitride semiconductor emission element ...

VCSEL WITH ELLIPTICAL APERTURE HAVING REDUCED RIN

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches. 120.-. (canceled)21. A VCSEL comprising:an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.64 to about 0.75, the VCSEL having a relative intensity noise (RIN) of less than or about −140 dB/Hz.22. The VCSEL of claim 21 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.23. The VCSEL of claim 22 , further comprising an elliptical contact having an elliptical contact aperture therein claim 22 , the elliptical contact being around the elliptical emission aperture.24. The VCSEL of claim 23 , wherein the elliptical contact is C-shaped.25. The VCSEL of claim 24 , further comprising one or more trenches lateral of the oxidized region claim 24 , the one or more trenches forming an elliptical shape claim 24 , wherein the oxidized region has an elliptical shape.26. The VCSEL of claim 25 , wherein the one or more trenches are ...

Optical sub-carrier multiplex television transmission system using a linear laser diode

An amplitude-modulated vestigial-sideband, television channel sub-carrier multiplexed optical fiber transmission system includes a laser diode operating linearly throughout the desired range of multiplex frequencies. Such linear laser diode operation is accomplished by limiting leakage current within the laser diode to a very low level. The composite second-order distortion in the optical output signal from the laser diode is down typically 50 db from the video carrier for each channel. For some laser diodes that exhibit slow turn-on in the L-I characteristic, there is a point of inflection in the L-I curve. Operation with the laser biased at or near this point results in extremely linear performance, even though the laser may have insufficient blocking of leakage current to otherwise produce acceptable linearity.

Semiconductor light emission system

A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current strictured layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current strictured layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part. ...

Directly modulated laser for PON applications

Semiconductor element

一种半导体器件，其包括：具有半极面的半导体基板，由六方III族氮化物半导体形成；第一导电类型的第一包覆层，由In x1 Al y1 Ga 1-x1-y1 N(其中，x1>0且y1>0)形成；第二导电类型的第二包覆层，由In x2 Al y2 Ga 1-x2-y2 N(其中，0≤x2≤0.02且0.03≤y2≤0.07)形成；以及在第一包覆层和第二包覆层之间形成的发光层。该半导体器件配备有在半导体基板的半极面上形成的外延层。

LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity ...

Directly modulated laser for PON application

In an embodiment, a laser includes a gain section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm.

Laser device

A Distributed Feedback Laser comprises a layer stack comprising a p-layer, an n-layer which are arranged so as to form an pn-junction having an active layer in between. Within the layer stack, an index coupled grating layer or a grating layer is arranged which comprises a first, a second, and a third grating portion. The first, the second, and the third grating portions are asymmetrically arranged along a lateral dimension of the layer stack, wherein the second grating portion is formed without a grating structure.

Semiconductor light emission system

HALBLEITERLASERVORRICHTUNG VOM VERGRABENEN TYP.

FOLDED LASERS SYSTEM

A folded laser system having an optical axis, the laser system comprising: (I) a coherent light source; (II) a reflector; (III) a lens component situated between the light source and the reflector; and (IV) a non-linear optical crystal, wherein the light source and the non-linear optical crystal are separated by a distance d>50µm. The lens component is positioned to provide a collimated beam when intercepting light from the light source, such that the collimated beam is at an angle Θ' to the optical axis, the reflector is situated to intercept the collimated beam and to reflect the collimated beam to the non-linear optical crystal through the lens; and the lens component is structured to provide an image on the non-linear optical crystal.

LONG DISTANCE TRANSMISSION USING MULTI-MODE VCSEL UNDER INJECTION LOCKING

Adjustable chirp is achieved in injection-locked, 10-Gb/s directly modulated, multimode 1.55-μm VCSELs for the first time, leading to 9OX increase in standard single-mode fiber transmission distance to 90km.

METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT

A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided.

A semiconductor laser device and a method for driving the same

A semiconductor laser device has a laser-oscillating optical waveguide (1) composed of a control region (2) which functions to absorb light and main regions (3) which function to oscillate laser light, said control region (2) being positioned in the centre portion of said optical waveguide (1) and said main regions (3) being positioned on both ends of said control region (2), wherein said laser device further comprises a shunting means (Rg) by which the ratio of the current Ig flowing to said control region to the total current It injected into said laser device is set to meet the inequality (1): 0.01 < Ig|It < 2|3 Lg|Lt ... (1) wherein Lg is the length of said control region and it is the length of said optical waveguide.

HALBLEITERLASERVORRICHTUNG.

Halbleiter-Lichtemissionsvorrichtung.

Distributed feedback laser with short cavity length

WAVEGUIDE HETEROSTRUCTURE FOR DISPERSION COMPENSATION IN SEMICONDUCTOR LASER

A waveguide heterostructure for a semiconductor laser with an active part, comprising an active region layer depending of the type of semiconductor used, which is sandwiched between an electrode layer and a substrate, usable for dispersion compensation in a semiconductor laser frequency comb setup, an optical frequency comb setup and a manufacturing method.

QUANTUM CASCADE LASER ELEMENT

... [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0 Подробнее

Lichtemissions-Vorrichtung mit Halbleitern.

Organische Halbleiterlaser mit Tripleit-Manager

Es wird eine erste Vorrichtung bereitgestellt. Die Vorrichtung umfasst einen organischen Halbleiterlaser. Der organische Halbleiterlaser umfasst ferner einen optischen Resonator und eine organische Schicht, die in dem optischen Resonator angeordnet ist. Die organische Schicht umfasst: eine organische Wirtsverbindung; eine organische emittierende Verbindung, die zur Fluoreszenzemission fähig ist; und eine organische Dotierungsverbindung. Die organische Dotierungsverbindung kann hier auch als Triplett-Manager bezeichnet werden. Die Triplett-Energie der organischen Dotierungsverbindung ist kleiner oder gleich der Triplett-Energie der organischen Wirtsverbindung. Die Triplett-Energie der organischen Dotierungsverbindung ist kleiner oder gleich der Triplett-Energie der organischen emittierenden Verbindung. Die Singulett-Energie der organischen emittierenden Verbindung ist kleiner oder gleich der Singulett-Energie der organischen Wirtsverbindung.

LASER DEVICE

A Distributed Feedback Laser comprises a layer stack comprising a p-layer, an n-layer which are arranged so as to form an pn-junction having an active layer in between. Within the layer stack, an index coupled grating layer or a grating layer is arranged which comprises a first, a second, and a third grating portion. The first, the second, and the third grating portions are asymmetrically arranged along a lateral dimension of the layer stack, wherein the second grating portion is formed without a grating structure.

LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

Halbleiter-Lichtemissionsvorrichtung.

Directly Modulated Laser for PON Applications

In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

Pumped edge emitters with metallic coatings

An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.

LASER DRIVER PULSE SHAPING CONTROL

Time-of-flight (ToF) systems which use pulsed laser diodes, are required to measure distances with high level of precision and control. The present disclosure provides a method and a corresponding system for controlling a temporal response of a laser diode, in particular pulsed laser diodes. In particular, the present disclosure provides a method and a related system for driving a laser diode so as to obtain predominantly a peak pulse response while minimising or completely avoiding the post-peak response in a temporal response of the laser diode. 1. A method of determining a duration , T , for a laser drive signal , to minimise post-peak response in a temporal response of a laser diode driven by the laser drive signal , the method comprising: [{'sub': 't', 'applying a test laser drive signal having a test duration, T, to the laser diode; and'}, 'monitoring an output of a photodetector, wherein the output is indicative of an energy of a light pulse output by the laser diode in response to the application of the test drive signal;, 'iteratively{'sub': 't', 'varying the test duration, T, of the test drive signal with successive iterations; and'}{'sub': 'dr', 'determining the duration, T, based on the monitoring of the output of the photodetector in successive iterations.'}2. A method according to claim 1 , wherein the test duration claim 1 , T claim 1 , of the test drive signal is increased between successive iterations.3. A method according to claim 1 , wherein the test duration claim 1 , T claim 1 , of the test drive signal is decreased between successive iterations.4. A method according to claim 1 , wherein determining the duration claim 1 , T claim 1 , based on the monitoring of the output of the photodetector in successive iterations comprises:identifying, from the monitored output of the photodetector, a first post-peak minimum in the said temporal response of the laser diode; and{'sub': dr', 't, 'setting the duration, T, to be the test duration, T, ...

Wavelength estimation device, light-source device, image display apparatus, object apparatus, wavelength estimation method, and light-source control method

A wavelength estimation device including a light detector to receive light emitted from a light source and an estimation unit. The estimation unit estimates a wavelength of the light based on an amount of light received by the light detector.

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.

Method for producing a radiation-emitting component and radiation-emitting component

A buried type semiconductor laser device

A buried type semiconductor laser device comprises a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate (1), wherein said laser-oscillation operating area contains a buffer layer (2) having the same polarity as said substrate, an active layer (3) and a cladding layer (4) having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of a burying layer (5) and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate,through said substrate (1) or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer (5) from said cladding layer (4), thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

X-ray metrology system with broadband laser produced plasma illuminator

本文中描述用於利用一寬帶、軟X射線照明源之基於x射線之半導體計量之方法及系統。一經雷射產生之電漿(LPP)光源產生高亮度、寬帶、軟x射線照明。該LPP光源將一高度聚焦、短持續時間雷射源引導至處於一液態或固態之一非金屬液滴目標。在一項實例中，一液滴產生器按50千赫與400千赫之間的一速率分配饋料之一系列標稱50微米液滴。在一個態樣中，各激勵光脈衝之持續時間小於1奈秒。在一些實施例中，各激勵光脈衝之持續時間小於0.5奈秒。在一些實施例中，該LPP光源包含一氣體分離系統，該氣體分離系統將未消耗饋料與該電漿室中之其他氣體分離且將該經分離饋料提供回至該液滴產生器。

A buried type semiconductor laser device

Non-linear vertical-cavity surface-emitting laser equalization

Technologies are generally described for implementing non-linear VCSEL equalization. In some examples, a rising edge tap parameter, a falling edge tap parameter, an equalization delay and a bias current may be used to equalize a data signal to be output from a VCSEL. A VCSEL model may be used to derive a VCSEL response to one or more isolated data pulses. The derived response may then be used to determine the rising and falling edge tap parameters and an equalization delay, based on a bias current value for the VCSEL and a data rate associated with the data signal. The data signal may then be adjusted based on the equalization delay and the rising and falling edge tap parameter and sent to the VCSEL for output. At the same time, the VCSEL may be biased with a bias current having the bias current value.

Laser driver pulse shaping control

Time-of-flight (ToF) systems which use pulsed laser diodes, are required to measure distances with high level of precision and control. The present disclosure provides a method and a corresponding system for controlling a temporal response of a laser diode, in particular pulsed laser diodes. In particular, the present disclosure provides a method and a related system for driving a laser diode so as to obtain predominantly a peak pulse response while minimising or completely avoiding the post-peak response in a temporal response of the laser diode.

Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

半导体发光元件(1)具备基板(10)、配置在基板(10)的上方的n型包层(12)、配置在n型包层(12)的上方的活性层(14)和配置在活性层(14)的上方的p型包层(17)；活性层(14)具有阱层(14d)、配置在阱层(14d)的n型包层(12)侧的n侧第一势垒层(14a)和配置在阱层(14d)的p型包层(17)侧的p侧势垒层(14f)；p侧势垒层(14f)包含In；n侧第一势垒层(14a)的In组份比低于p侧势垒层(14f)的In组份比；n侧第一势垒层(14a)的带隙能量小于p侧势垒层(14f)的带隙能量。

VCSEL with elliptical aperture with reduced RIN

一种VCSEL，该VSCEL可以包括：椭圆形孔口，该椭圆形孔口位于定位在有源区域与发射表面之间的氧化区域中的椭圆形氧化物孔口，该椭圆形孔口具有半径比(短半径)/(长半径)在0.6与0.8之间的短半径和长半径，VCSEL具有小于‑140dB/Hz的相对强度噪声(RIN)。VCSEL可以包括椭圆形发射孔口，该椭圆形发射孔口具有与椭圆形氧化物孔口相同的尺寸。VCSEL可以包括椭圆形接触件，椭圆形接触件具有位于其中的椭圆形接触件孔口，该椭圆形接触件围绕椭圆形发射孔口。椭圆形接触件可以是C形的。VCSEL可以包括位于氧化区域侧向的一个或更多个沟槽，所述一个或更多个沟槽形成为椭圆形形状，其中，氧化区域具有椭圆形形状。所述一个或更多个沟槽可以是梯形形状的沟槽。

X-ray metrology system with broadband laser generated plasma illuminator

本文中描述用于利用宽带、软X射线照明源的基于x射线的半导体计量的方法及系统。经激光器产生的等离子体LPP光源产生高亮度、宽带、软x射线照明。所述LPP光源将高度聚焦、短持续时间激光器源引导到处于液态或固态的非金属液滴目标。在一个实例中，液滴产生器按50千赫与400千赫之间的速率施配馈料的一系列标称50微米液滴。在一个方面中，每一激励光脉冲的持续时间小于一纳秒。在一些实施例中，每一激励光脉冲的持续时间小于0.5纳秒。在一些实施例中，所述LPP光源包含气体分离系统，所述气体分离系统将未消耗馈料与所述等离子体室中的其它气体分离且将所述经分离馈料提供回到所述液滴产生器。

Program for simulation modeling of organic solid-state laser

公开了一种有机固态激光装置的模拟建模用程序，其包括电传输模块、热模块(thermic module)、光学模块及速率方程模块，其中，该等四个模块能够单独使用或彼此耦合使用。

Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component

A method for manufacturing a radiation-emitting component ( 1 ) in which a field distribution of a near field ( 101, 201 ) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile ( 111, 211, 511 ) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Semiconductor laser element

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Compensated laser structure for analog communication applications

A laser diode structure (30) including compensating elements for improving the linearity of the laser response, of particular concern for broadband analog applications. The compensation comprises voltage-dependent elements which are incorporated to correct for the presence of parasitic, voltage-dependent resistive and capacitive elements associated with the laser diode junction. These parasitic elements have been found to be a cause of the laser's nonlinear L-I relationship. By careful choice of the bias voltages supplied to the compensating elements, the nonlinearity due to the presence of the parasitic elements may be minimized. In particular, a combination of a voltage-dependent resistance and voltage-dependent capacitance may be utilized.

Patent JPWO2021107032A1

Program for simulation modeling of organic solid-state lasers

本發明公開了一種有機固態雷射裝置的模擬建模用程式，其包括電傳輸模組、熱模組(thermic module)、光學模組及速率方程式模組，其中該等四個模組能夠單獨使用或彼此耦合使用。

Method of manufacturing optical semiconductor apparatus and the apparatus

An apparatus (100) is configured to operate in a single fundamental transverse mode and the apparatus (100) comprises a waveguide layer (102) between an n-doped cladding layer (112) and a p-doped cladding layer (104). The waveguide layer (102) includes an first waveguide part (200), and an active layer (108) located between the first waveguide part (200) and the p-doped cladding layer (104), the active layer (108) being asymmetrically within the waveguide layer (102) closer to the p-doped cladding layer (104) than the n-doped cladding layer (112). The refractive index of the n-doped cladding layer (112) being equal to or larger than the p-doped cladding layer (104). A first end (202) of the first waveguide part (200) is adjacent to the n-doped cladding layer (112). A second end (204) of the first waveguide part (200) is adjacent to a first end (206) of the active layer (108). A desired donor density is doped in the first waveguide part (200) for controlling the carrier density dependent internal optical loss in the first waveguide part (200) at high injection levels.

芯片测试装置

本申请提供了一种芯片测试装置，集成驱动电源和探针卡，可以实现对高功率、窄脉宽的激光芯片的性能测试评估。该芯片测试装置包括：驱动电源；探针卡PCB，探针卡PCB与驱动电源的PCBA连接；探针正极，探针正极通过第一介质与探针卡PCB连接，探针正极的后端与驱动电源的PCBA的上表面连接；探针负极，探针负极通过第一介质与探针卡PCB连接，探针负极的后端与驱动电源的PCBA的下表面连接。

芯片测试装置

本申请提供了一种芯片测试装置，集成驱动电源和探针卡，可以实现对高功率、窄脉宽的激光芯片的性能测试评估。该芯片测试装置包括：驱动电源；探针卡PCB，探针卡PCB与驱动电源的PCBA连接；探针正极，探针正极通过第一介质与探针卡PCB连接，探针正极的后端与驱动电源的PCBA的上表面连接；探针负极，探针负极通过第一介质与探针卡PCB连接，探针负极的后端与驱动电源的PCBA的下表面连接。

激光器装置

一种包括层堆叠的分布反馈激光器，该层堆叠包括p层、n层，其布置成构成pn结，在它们之间具有有源层。在层堆叠中，布置有折射率耦合光栅层或光栅层，其包括第一、第二和第三光栅部分。第一、第二和第三光栅部分沿着层堆叠的横向尺寸不对称地布置，其中，第二光栅部分构成为没有光栅结构。

ファセットの信頼性が向上した半導体レーザ

【課題】高出力及び高電流で動作させるための改善されたファセット信頼性を有する、改善された半導体レーザを提供すること。【解決手段】本明細書では、デバイス性能を著しく変化させることなく、高出力及び高電流で動作させるための改善されたファセット信頼性を有する、改善された半導体レーザの例が記載される。半導体レーザは、互いに順次的に隣接し且つ前記基板上に配置された、第１の半導体層、アクティブ層及び第２の半導体層と、コンタクト層とを含むことができる。一例では、改良された半導体レーザは、半導体レーザキャビティの長さよりも短い伝導コンタクト及び／又はコンタクト層の末端部の少なくとも一方に配置された誘電体層を有することができる。【選択図】図１

광대역 레이저 생성 플라즈마 조명기를 갖는 x-선 계측 시스템

광대역의 연질 X-선 조명 소스를 이용하는 x-선 기반 반도체 계측을 위한 방법들 및 시스템들이 본 명세서에 설명된다. 레이저 생성 플라즈마(LPP) 광원은, 높은 밝기의, 광대역의 연질 X-선 조명을 발생시킨다. LPP 광원은, 고도로 포커싱된, 짧은 지속기간의 레이저 소스를 액체 또는 고체 상태의 비금속성 액적 타깃으로 지향시킨다. 일 예에서, 액적 발생기는 50 내지 400 킬로헤르츠의 레이트로 공급 재료의 일련의 공칭적으로 50 미크론의 액적들을 분배한다. 일 양태에서, 여기 광의 각각의 펄스의 지속기간은 1 나노초 미만이다. 일부 실시예들에서, 여기 광의 각각의 펄스의 지속기간은 0.5 나노초 미만이다. 일부 실시예들에서, LPP 광원은, 플라즈마 챔버에서의 다른 가스들로부터 소비되지 않은 공급 재료를 분리하고 분리된 공급 재료를 액적 발생기로 다시 제공하는 가스 분리 시스템을 포함한다.

一种判断半导体激光器芯片光学灾变类型的方法

本发明提供一种判断半导体激光器芯片光学灾变类型的方法，解决现有半导体激光器芯片COBD和COMD的判断成本较高、判断时间较长、生产效率较低的问题。该方法包括：步骤一、设置加载电流；步骤二、将加载电流加载在半导体激光器芯片上；步骤三、采集半导体激光器芯片的电流‑功率曲线、电流‑电压曲线；步骤四、若电流‑功率曲线突然下降，同时，电流‑电压曲线突然上升，则判断芯片的光学灾变为COMD；若电流‑功率曲线突然下降，同时，电流‑电压曲线突然下降，则判断芯片的光学灾变为COBD。本发明方法无需专业设备，只需采集测试过程中的电流、功率值和电压值，即可进行COBD和COMD的判断，检测设备简单、成本较低，只需普通技术人员即可实现失效的判断。

Method of manufacturing optical semiconductor apparatus and the apparatus

An apparatus is configured to operate in a single fundamental transverse mode and the apparatus includes a waveguide layer between an n-doped cladding layer and a p-doped cladding layer. The waveguide layer includes a first waveguide part, and an active layer located between the first waveguide part and the p-doped cladding layer, the active layer being asymmetrically within the waveguide layer closer to the p-doped cladding layer than the n-doped cladding layer. The refractive index of the n-doped cladding layer being equal to or larger than the p-doped cladding layer. A first end of the first waveguide part is adjacent to the n-doped cladding layer. A second end of the first waveguide part is adjacent to a first end of the active layer. A desired donor density is doped in the first waveguide part for controlling the carrier density dependent internal optical loss in the first waveguide part at high injection levels.

VCSEL mit elliptischer Apertur mit reduziertem RIN

Ein VCSEL (302) aufweisend:Eine Mesa (304) enthaltend einen Mesakontakt (308) und eine elliptische Oxidapertur (312) in einem oxidierten Bereich, der sich zwischen einer aktiven Region und einer Emissionsoberfläche befindet, wobei die elliptische Oxidapertur einen kurzen Radius undeinen langen Radius mit einem Radienverhältnis (kurzer Radius)/(langer Radius) zwischen 0,6 und 0,8 hat, wobei der VCSEL ein relatives Intensitätsrauschen (RIN) von weniger als -140 dB/Hz hat; undeine Mehrzahl von Gräben (316) seitlich des oxidierten Bereichs, wobei jede der Mehrzahl von Gräben durch eine Lücke (318) getrennt ist und eine elliptische Form um die elliptische Oxidapertur (312) bildet, wobei der oxidierte Bereich die elliptische Form hat, undwobei die Gräben in zwei Typen unterteilt werden,wobei ein erster Typ der Gräben (316a), der näher am Mesakontakt (308) liegt, ein leitendes Material (348) enthält, undwobei ein zweiter Typ der Gräben (316b), der weiter vom Mesakontakt (308) entfernt ist, ausschließlich mit einem dielektrischen Material (346) gefüllt ist.

広帯域レーザ産生プラズマイルミネータを有するｘ線計量システム及び方法

Waveguide heterostructure for dispersion compensation in semiconductor laser

A waveguide heterostructure (0) for a semiconductor laser with an active part (I), comprising an active region layer (3) depending of the type of semiconductor used, surrounded in direction of a growth axis (G) by at least an active part bottom cladding (30) and an active part top cladding (31), wherein the active part (I) is sandwiched between an electrode layer (1) and a substrate (2), usable for dispersion compensation in a semiconductor laser frequency comb setup, should be optimized in order to lower the group velocity dispersion in a broad spectral range. This is reached by introducing a passive part (II), comprising at least a intercladding layer (40) and a passive top cladding (41) surrounding a passive core layer (4) inserted into the sandwich between substrate (2) and electrode layer (1) in direction of a growth axis (G) on top or below the active part (I), wherein the intercladding layer (40), passive part top cladding (41) and passive core layer (4) are semiconductors and the refractive indices of active region layer (3, (n(3)) and passive core layer (4, (n(4)) are greater than refractive indices of intercladding layer (40, n(40)) and passive part top cladding (41, n(41)).

折返し型レーザシステム

光軸を有する折返し型レーザシステムであって、レーザシステムは、(Ｉ)コヒーレント光源、(II)反射器、(III)光源と反射器の間に配置されたレンズコンポーネント及び(IV)非線形光学結晶を備え、光源と非線形光学結晶はｄ＞５０μｍの距離ｄで隔てられる。レンズコンポーネントは光源からの光を遮るとコリメートビームを、コリメートビームが光軸に対して角Θ'をなすように、供給するように配置され、反射器はコリメートビームを遮り、コリメートビームを反射して、レンズを通して非線形光学結晶に向けるように配置され、レンズコンポーネントは非線形光学結晶上に像を与えるようにつくられる。

激光二极管以及制造激光二极管的方法

本发明公开了激光二极管以及制造激光二极管的方法，一种激光二极管包括：半导体基底，由六方晶系III族氮化物半导体制成并且具有沿{2,0,-2,1}方向定向的半极性面；外延层，包括形成激光的光波导的发光层，并且形成在半导体基底的半极性面上，所述外延层使得激光的传播方向在光波导面内相对于c轴在光波导面上的投影方向以在大约8°至大约12°或者大约18°至大约29°的范围内的角度倾斜，所述光波导面包括激光的传播方向并且与半极性面平行；两个谐振器端面；第一电极；以及第二电极。

Surface-emitting laser, laser device, detection device, mobile object, and method for driving surface-emitting laser

A surface-emitting laser (100) includes an active layer (130); multiple reflectors (120, 140) sandwiching the active layer (130); and an electrode pair (160, 170) connected to a power supply, through which a current is injected into the active layer (130). The surface-emitting laser (100) emits at least one laser beam during a current injection period when the current injected into the active layer through the electrode pair during the current injection period is a first current and emits at least one laser beam during a current decrease period when the current injected into the active layer through the electrode pair during the current injection period is a second current exceeding the first current. The current decrease period is after the current injection period. The current injected into the active layer during the current decrease period is lower than the current injected into the active layer during the current injection period.

Surface-emitting laser, laser device, detection device, mobile object, and method for driving surface-emitting laser

A surface-emitting laser includes an active layer; multiple reflectors sandwiching the active layer; and an electrode pair connected to a power supply, through which a current is injected into the active layer. The surface-emitting laser emits at least one laser beam during a current injection period when the current injected into the active layer through the electrode pair during the current injection period is a first current and emits at least one laser beam during a current decrease period when the current injected into the active layer through the electrode pair during the current injection period is a second current exceeding the first current. The current decrease period is after the current injection period. The current injected into the active layer during the current decrease period is lower than the current injected into the active layer during the current injection period.

Cascade lasers

A single-mode cascade laser (1) that will lase at a pre-specified lasing wavelength and how to manufacture such a laser. A buried-heterostructure waveguide (5) is terminated to a precisely specified length of ≤ 100 µm by dry etching its end facets (36, 38). A cavity end mirror is formed on each end facet by depositing first and second optical material layers (24, 26) with differing refractive indices, wherein each mirror layer has a thickness in a range above and below one-quarter of the intended lasing wavelength within the optical material from which the mirror layer is formed. The precise definition of the length of the waveguide and of the thicknesses of the end mirror layers together with the short waveguide length, which is shorter than what is achievable by mechanical cleaving, provide a Fabry-Perot cavity that supports single-mode lasing at the specified lasing wavelength.

Cascade lasers

A single-mode cascade laser (1) that will lase at a pre-specified lasing wavelength and how to manufacture such a laser. A buried-heterostructure waveguide (5) is terminated to a precisely specified length of ≤ 100 μm by dry etching its end facets (36, 38). A cavity end mirror is formed on each end facet by depositing first and second optical material layers (24, 26) with differing refractive indices, wherein each mirror layer has a thickness in a range above and below one-quarter of the intended lasing wavelength within the optical material from which the mirror layer is formed. The precise definition of the length of the waveguide and of the thicknesses of the end mirror layers together with the short waveguide length, which is shorter than what is achievable by mechanical cleaving, provide a Fabry-Pérot cavity that supports single-mode lasing at the specified lasing wavelength.

具有改善的小平面可靠性的半導體雷射

本文中描述改善的半導體雷射之實例，這些半導體雷射具有改善的小平面可靠性，以用於在高功率及高電流下操作，而裝置效能無顯著變化。該半導體雷射可包括彼此依次鄰近且配置於一基板上之第一半導體層、作用層、第二半導體層，以及接觸層。在一個實例中，該改善的半導體雷射可具有小於半導體雷射空腔之長度的導電接點及/或配置於該接觸層之末端部分中之至少一者上的介電層。

Dynamic laser diode compensation

A laser drive circuit (700) compensates for laser diode (110) dynamics. A compensation value is determined from a sum of weighted basis functions. The basis functions may be a function of current desired optical powers and/or past desired optical powers. The weights may be updated periodically based at least in part on accumulated basis function outputs and measured optical powers.

Quantum cascade laser element

[PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (J th ) and an increased maximum operating temperature (T max ). [SOLUTION] One embodiment of the present invention provides a THz-QCL element ( 1000 ) with a QCL structure ( 100 ), which is a semiconductor superlattice ( 100 A) sandwiched between a pair of electrodes ( 20, 30 ). The semiconductor superlattice ( 100 A) (QCL structure ( 100 )) is provided with an active region ( 10 ) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region ( 10 ) has repeating unit structures ( 10 U) of a thickness, which includes sets of a well layer ( 10 W) and a barrier layer ( 10 B) alternatingly laminated with each other, wherein the well layer ( 10 W) is made of Al x Ga 1-x As (where 0<x<1), which is a mixed crystal of AlAs and GaAs.

Waveguide heterostructure for dispersion compensation in semiconductor laser

Semiconductor laser having improved facet reliability

Described herein are examples of improved semiconductor lasers having improved facet reliability for operation at high power and high current without significant change in device performance. The semiconductor laser may include a first semiconductor layer, an active layer, a second semiconductor layer sequentially adjacent to each other and arranged on a substrate, and a contact layer. In one example, the improved semiconductor laser may have a conductive contact less than the length of the semiconductor laser cavity and/or a dielectric layer arranged on at least one of the end portions of the contact layer.

Waveguide heterostructure for dispersion compensation in semiconductor laser

A waveguide heterostructure (0) for a semiconductor laser with an active part (I), comprising an active region layer (3) depending of the type of semiconductor used, surrounded in direction of a growth axis (G) by at least an active part bottom cladding (30) and an active part top cladding (31), wherein the active part (I) is sandwiched between an electrode layer (1) and a substrate (2), usable for dispersion compensation in a semiconductor laser frequency comb setup, should be optimized in order to lower the group velocity dispersion in a broad spectral range. This is reached by introducing a passive part (II), comprising at least a intercladding layer (40) and a passive top cladding (41) surrounding a passive core layer (4) inserted into the sandwich between substrate (2) and electrode layer (1) in direction of a growth axis (G) on top or below the active part (I), wherein the intercladding layer (40), passive part top cladding (41) and passive core layer (4) are semiconductors and the refractive indices of active region layer (3, (n(3)) and passive core layer (4, (n(4)) are greater than refractive indices of intercladding layer (40, n(40)) and passive part top cladding (41, n(41)).

Quantum cascade laser element

Laser diode assembly and a method of assembling such a laser diode assembly

Iii族氮化物半导体发光元件及iii族氮化物半导体发光元件的制作方法

提供一种被降低的正向电压的III族氮化物半导体激光元件。在p型包覆层中，以p型包覆层中的p型掺杂剂的浓度大于n型杂质的浓度的方式含有p型掺杂剂及n型杂质。通过使用比p型包覆层的带隙大的激发光的测定而获得的光致发光(PL)光谱具有能带端发光及施主受主对发光的波峰。该PL光谱的能带端发光峰值的能量E(BAND)与该PL光谱的施主受主对发光峰值的能量E(DAP)之差(E(BAND)-E(DAP))与该III族氮化物半导体激光元件(11)的正向驱动电压(Vf)具有相关。在该能量差(E(BAND)-E(DAP))为0.42eV以下时，III族氮化物半导体发光元件的正向电压施加时的驱动电压降低。

Semiconductor device

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In x1 Al y1 Ga 1-x1-y1 N, where x1>0 and y1>0, the second cladding layer being made of In x2 Al y2 Ga 1-x2-y2 N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.

Semiconductor device

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In x1 Al y1 Ga 1-x1-y1 N, where x 1 >0 and y 1 >0, the second cladding layer being made of In x2 Al y2 Ga 1-x2-y2 N, where0≦x 2 ≦about 0.02 and about 0.03≦y 2 ≦about 0.07.

Geometry for a semiconductor optical amplifier

In some implementations, a device may generate a data set including at least modal gain values and modal loss values for a semiconductor optical amplifier (SOA) slice. The device may determine, based on the data set, respective widths for a plurality of slices of an SOA using an autoregressive model. A width, of the respective widths, for a slice, of the plurality of slices, may be associated with a maximum conversion efficiency achievable for the slice at a given current density. The device may generate information indicating a geometry for the SOA based on the respective widths for the plurality of slices.

Surface-emitting laser, laser device, detection device, mobile object, information terminal apparatus, and method for driving surface-emitting laser

A surface-emitting laser (100) includes a resonator (100C1) and an electrode pair (160, 170) connected to a power supply, through which a current is injected into an active layer (130). The resonator (100C1) includes the active layer (130); a first reflector (120); and a second reflector (140). The resonator (100C1) has an optical thickness 1.5 times or more than a wavelength of the laser beam in a vacuum. The surface-emitting laser (100) does not oscillate the laser beam during a current injection period in which the power supply injects the current into the active layer (130) through the electrode pair (160, 170); and oscillates and emits the laser beam during a current decrease period after the current injection period. The current injected into the active layer (130) during the current decrease period is lower than the current injected into the active layer (130) during the current injection period.

半导体光放大器的几何结构

在一些实施方式中，设备可以生成至少包括半导体光放大器(SOA)切片的模态增益值和模态损耗值的数据集。该设备可以基于所述数据集使用自回归模型来确定SOA的多个切片的相应宽度。所述多个切片中的一切片的、所述相应宽度中的一宽度可以与在给定电流密度下该切片能实现的最大转换效率相关联。设备可以基于多个切片的相应宽度来生成指示SOA的几何结构的信息。

一种多路混沌激光发生装置及混沌激光发生方法

本申请提供了一种多路混沌激光发生装置及激光发生方法，本申请提供的激光发生装置包括混沌激光发生模块，用于产生混沌激光；涡旋复用模块，用于使混沌激光携带多阶OAM信息；信息采集模块，用于采集涡旋复用模块出射的携带多阶OAM信息的混沌激光。该装置结构简单，既可以达到对光通信系统的双重保密，又能够提升系统的通信容量，实现高速、保密的自由空间激光安全通信，为混沌光束空间维数的利用提供了可能，在实现信息保密传输的同时提高光通信的容量；当参数和实际需求发生变化时，本申请只需模拟仿真出新的多阶复用相位板图像加载于涡旋复用模块上即可达到技术效果，无需增减部件，操作简便灵活。

半导体光放大器的几何结构

在一些实施方式中，设备可以生成至少包括半导体光放大器(SOA)切片的模态增益值和模态损耗值的数据集。该设备可以基于所述数据集使用自回归模型来确定SOA的多个切片的相应宽度。所述多个切片中的一切片的、所述相应宽度中的一宽度可以与在给定电流密度下该切片能实现的最大转换效率相关联。设备可以基于多个切片的相应宽度来生成指示SOA的几何结构的信息。

一种验证近红外激光器光斑尺寸的装置及使用方法

本发明涉及一种验证近红外激光器光斑尺寸的装置及使用方法，属于半导体激光器技术领域。装置包括激光器、APD芯片、放大电路和LED芯片，其中，所述APD芯片排列在电路板上，每个APD芯片连接一个放大电路，放大电路后置LED芯片，APD芯片前方设置激光器。本发明可以在远距离采集激光器的发射的光斑信息，确定光斑尺寸，方便对激光器进行设计与研究。

有机固态激光器的模拟建模用程序

公开了一种有机固态激光装置的模拟建模用程序，其包括电传输模块、热模块(thermic module)、光学模块及速率方程模块，其中，该等四个模块能够单独使用或彼此耦合使用。

半导体发光元件及半导体发光元件的制造方法

半导体发光元件(1)具备基板(10)、配置在基板(10)的上方的n型包层(12)、配置在n型包层(12)的上方的活性层(14)和配置在活性层(14)的上方的p型包层(17)；活性层(14)具有阱层(14d)、配置在阱层(14d)的n型包层(12)侧的n侧第一势垒层(14a)和配置在阱层(14d)的p型包层(17)侧的p侧势垒层(14f)；p侧势垒层(14f)包含In；n侧第一势垒层(14a)的In组份比低于p侧势垒层(14f)的In组份比；n侧第一势垒层(14a)的带隙能量小于p侧势垒层(14f)的带隙能量。

一种验证近红外激光器光斑尺寸的装置及使用方法

本发明涉及一种验证近红外激光器光斑尺寸的装置及使用方法，属于半导体激光器技术领域。装置包括激光器、APD芯片、放大电路和LED芯片，其中，所述APD芯片排列在电路板上，每个APD芯片连接一个放大电路，放大电路后置LED芯片，APD芯片前方设置激光器。本发明可以在远距离采集激光器的发射的光斑信息，确定光斑尺寸，方便对激光器进行设计与研究。

芯片测试装置

本申请提供了一种芯片测试装置，集成驱动电源和探针卡，可以实现对高功率、窄脉宽的激光芯片的性能测试评估。该芯片测试装置包括：驱动电源；探针卡PCB，探针卡PCB与驱动电源的PCBA连接；探针正极，探针正极通过第一介质与探针卡PCB连接，探针正极的后端与驱动电源的PCBA的上表面连接；探针负极，探针负极通过第一介质与探针卡PCB连接，探针负极的后端与驱动电源的PCBA的下表面连接。

一种多路混沌激光发生装置及混沌激光发生方法

本申请提供了一种多路混沌激光发生装置及激光发生方法，本申请提供的激光发生装置包括混沌激光发生模块，用于产生混沌激光；涡旋复用模块，用于使混沌激光携带多阶OAM信息；信息采集模块，用于采集涡旋复用模块出射的携带多阶OAM信息的混沌激光。该装置结构简单，既可以达到对光通信系统的双重保密，又能够提升系统的通信容量，实现高速、保密的自由空间激光安全通信，为混沌光束空间维数的利用提供了可能，在实现信息保密传输的同时提高光通信的容量；当参数和实际需求发生变化时，本申请只需模拟仿真出新的多阶复用相位板图像加载于涡旋复用模块上即可达到技术效果，无需增减部件，操作简便灵活。

一种远距离激光光场能量均匀度测量系统

本发明公开了一种远距离激光光场能量均匀度测量系统，其特征在于，包括在光传播方向上依次设置的激光器、光路扩束系统、光路调节装置、光强衰减器、快门和CCD/CMOS感光器件。本发明的系统使远距离激光光场中光斑不同位置处的激光脉冲强度被CCD/CMOS感光区域内的各个独立像素单元捕获，CCD/CMOS通过对光场脉冲强度的积累，实现对远场激光能量均匀度的测量要求。

大功率vcsel激光器的驱动控制方法

大功率VCSEL激光器的驱动控制方法，它涉及激光器技术领域。开启大功率VCSEL激光器，综合检测大功率VCSEL激光器的运行状态，运行状态合格后操作步骤二；将驱动控制模块与大功率VCSEL激光器的控制芯片电性连接；将模拟驱动装置与驱动控制模块电性连接；利用模拟驱动装置控制大功率VCSEL激光器的控制芯片的运行，模拟驱动合格后，直接对大功率VCSEL激光器进行驱动控制。采用上述技术方案后，本发明有益效果为：方法使用便捷，使用价值高，能够实现模拟驱动控制，能够减少直接驱动的意外状况，能够在驱动时很好的防护激光器，能够满足如今驱动控制的质量，在同行领域中性能优越且推广性强。

一种判断半导体激光器芯片光学灾变类型的方法

本发明提供一种判断半导体激光器芯片光学灾变类型的方法，解决现有半导体激光器芯片COBD和COMD的判断成本较高、判断时间较长、生产效率较低的问题。该方法包括：步骤一、设置加载电流；步骤二、将加载电流加载在半导体激光器芯片上；步骤三、采集半导体激光器芯片的电流‑功率曲线、电流‑电压曲线；步骤四、若电流‑功率曲线突然下降，同时，电流‑电压曲线突然上升，则判断芯片的光学灾变为COMD；若电流‑功率曲线突然下降，同时，电流‑电压曲线突然下降，则判断芯片的光学灾变为COBD。本发明方法无需专业设备，只需采集测试过程中的电流、功率值和电压值，即可进行COBD和COMD的判断，检测设备简单、成本较低，只需普通技术人员即可实现失效的判断。

Lichtemittierende Vorrichtung, Entfernungsmessvorrichtung und bewegbares Objekt

Eine lichtemittierende Vorrichtung umfasst: ein erstes lichtemittierendes Halbleiterelement, das eine erste aktive Schicht und einen ersten Resonatorabschnitt über einem Halbleitersubstrat umfasst und ein erstes Licht emittiert; ein zweites lichtemittierendes Halbleiterelement, das einen ersten Reflektor, einen zweiten Resonatorabschnitt, der eine zweite aktive Schicht umfasst, die durch das erste Licht angeregt wird, und einen zweiten Reflektor umfasst, die in dieser Reihenfolge über dem ersten lichtemittierenden Halbleiterelement gestapelt sind, und das ein zweites Licht emittiert, wobei eine Oszillationswellenlänge des zweiten lichtemittierenden Halbleiterelements länger ist als eine Oszillationswellenlänge des ersten lichtemittierenden Halbleiterelements, wobei das zweite lichtemittierende Halbleiterelement eine sättigbare Absorptionsschicht zwischen dem zweiten Resonatorabschnitt und dem zweiten Reflektor umfasst und wobei eine Dicke L und ein Absorptionskoeffizient α der zweiten aktiven Schicht die nachstehende Ungleichung erfüllen:3,45≤α×L≤15.

光发射设备、测距设备、以及可移动物体

本公开涉及光发射设备、测距设备、以及可移动物体。光发射设备包括：第一半导体光发射元件，包括在半导体基板之上的第一活性层和第一谐振器部分，并且发射第一光；第二半导体光发射元件，包括在所述第一半导体光发射元件之上依次堆叠的第一反射器、第二谐振器部分、以及第二反射器，并且发射第二光，所述第二谐振器部分包括由所述第一光激发的第二活性层，其中所述第二半导体光发射元件的振荡波长比所述第一半导体光发射元件的振荡波长长，其中所述第二半导体光发射元件包括所述第二谐振器部分与所述第二反射器之间的可饱和吸收层，并且其中所述第二活性层的厚度L和吸收系数α满足以下不等式：3.45≤α×L≤15。

発光装置、測距装置及び移動体

【課題】長波長領域において光パルス幅が短く尖頭値が高い光パルスを生成し得る発光装置を提供する。【解決手段】発光装置は、半導体基板の上に、第１の活性層と、第１の共振器部と、を有し、第１の光を出射する第１の半導体発光素子と、第１の半導体発光素子の上に、第１の反射鏡と、第１の光により励起される第２の活性層を含む第２の共振器部と、第２の反射鏡と、がこの順に積層され、第２の光を出射する第２の半導体発光素子と、第１の半導体発光素子に電流を注入する駆動部と、を有し、第２の半導体発光素子の発振波長は、第１の半導体発光素子の発振波長よりも長波長であり、第２の半導体発光素子は、第２の共振器部と第２の反射鏡との間に可飽和吸収層を含み、第２の活性層の厚さＬ及び第２の活性層の吸収係数αは、次式（１）を満たす。３．４５≦α×Ｌ≦１５ …（１）【選択図】図１

具有经宽带激光器产生的等离子体照明器的x射线计量系统

本文中描述用于利用宽带、软X射线照明源的基于x射线的半导体计量的方法及系统。经激光器产生的等离子体LPP光源产生高亮度、宽带、软x射线照明。所述LPP光源将高度聚焦、短持续时间激光器源引导到处于液态或固态的非金属液滴目标。在一个实例中，液滴产生器按50千赫与400千赫之间的速率施配馈料的一系列标称50微米液滴。在一个方面中，每一激励光脉冲的持续时间小于一纳秒。在一些实施例中，每一激励光脉冲的持续时间小于0.5纳秒。在一些实施例中，所述LPP光源包含气体分离系统，所述气体分离系统将未消耗馈料与所述等离子体室中的其它气体分离且将所述经分离馈料提供回到所述液滴产生器。

具有降低的rin的带有椭圆形孔口的vcsel

一种VCSEL，该VSCEL可以包括：椭圆形孔口，该椭圆形孔口位于定位在有源区域与发射表面之间的氧化区域中的椭圆形氧化物孔口，该椭圆形孔口具有半径比(短半径)/(长半径)在0.6与0.8之间的短半径和长半径，VCSEL具有小于‑140dB/Hz的相对强度噪声(RIN)。VCSEL可以包括椭圆形发射孔口，该椭圆形发射孔口具有与椭圆形氧化物孔口相同的尺寸。VCSEL可以包括椭圆形接触件，椭圆形接触件具有位于其中的椭圆形接触件孔口，该椭圆形接触件围绕椭圆形发射孔口。椭圆形接触件可以是C形的。VCSEL可以包括位于氧化区域侧向的一个或更多个沟槽，所述一个或更多个沟槽形成为椭圆形形状，其中，氧化区域具有椭圆形形状。所述一个或更多个沟槽可以是梯形形状的沟槽。

一种光学半导体装置及其制造方法

一种光学半导体装置(100)，以单个基本横向模式运行，所述光学半导体装置(100)包括位于n掺杂包层(112)与p掺杂包层(104)之间的波导层(102)。所述波导层(102)包括第一波导部分(200，n‑OCL)，以及位于所述第一波导部分(200，n‑OCL)和所述p掺杂包层(104)之间的有源层(108)，所述有源层(108)的位置不对称，其距离所述p掺杂包层(104)比所述n掺杂包层(112)更近。所述n掺杂包层(112)的折射率大于或等于所述p掺杂包层(104)的折射率。第一波导部分(200)的第一端口(202)与n掺杂包层(112)相邻。第一波导部分(200)的第二端口(204)与有源层(108)的第一端口(206)相邻。在所述第一波导部分(200)掺杂期望的供体浓度，用于在高注入水平下，控制第一波导部分(200)中与载流子浓度相关的内部光损耗(n‑OCL)。

X-ray metrology system with broadband laser produced plasma illuminator

双三角回音壁光谐振模式的半导体六边形微米碟激光器

本发明属于半导体微腔激光器领域，为解决六边形回音壁模式品质因子低与三角形回音壁模式出射难的问题：公开了一种双三角回音壁光谐振模式的半导体六边形微米碟激光器，该装置利用高折射率增益材料的受激辐射物理特性，通过反射衬底提供底面的光反射来降低微腔激光器垂直方向光学损耗，半导体六边形微米碟作为光学谐振腔与激光增益物质，激光器作为光学泵浦源提供光学增益，当泵浦源功率超过微腔激光器阈值后产生激光出射；通过控制泵浦源激光光斑位于六边形微米碟角落，在受激辐射后产生双三角回音壁光学谐振模式的激光出射。本发明相比较常规六边形和三角形回音壁光谐振模式的激光器同时具有高的品质因子和易于激光出射的优点。

集成高对比光栅的光束整形垂直腔面发射激光器及其模拟方法

一种集成高对比光栅的光束整形垂直腔面发射激光器及其模拟方法，所述光束整形垂直腔面发射激光器由垂直腔面发射激光器和高对比光栅组成，通过调节光栅面积和垂直腔面发射激光器的氧化孔大小获得不同形状输出光束。本发明可以实现在不借助外部光束整形系统下获得单瓣、双瓣等光束输出。

激光器装置

一种包括层堆叠的分布反馈激光器，该层堆叠包括p层、n层，其布置成构成pn结，在它们之间具有有源层。在层堆叠中，布置有折射率耦合光栅层或光栅层，其包括第一、第二和第三光栅部分。第一、第二和第三光栅部分沿着层堆叠的横向尺寸不对称地布置，其中，第二光栅部分构成为没有光栅结构。