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05-01-2012 дата публикации

High-temperature activation process

Номер: US20120000247A1

Автор: Daniel Burgard, James Hinkle, Joshua Conley, Stephen Murphy, Thomas Truman

Принадлежит: Individual

A method for processing a coated glass substrate may include a high-temperature activation process.

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Номер записи: 1

05-01-2012 дата публикации

Graphene Solar Cell And Waveguide

Номер: US20120000521A1

Автор: Ageeth A. Bol, Ahmed Maarouf, Amal Kasry, Dennis M. Newns, George S. Tulevski, Glenn J. Martyna, Marcelo Kuroda, Razvan A. Nistor

Принадлежит: Egypt Nanotechnology Center EGNC, International Business Machines Corp

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer.

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Номер записи: 2

05-01-2012 дата публикации

Rtp heating system and method

Номер: US20120003774A1

Автор: Shiezen Steven HUANG

Принадлежит: Individual

An RTP heating system and an RTP heating method, which can heat a photovoltaic-device intermediate product having a glass substrate, a Mo layer, and a light absorption layer in formation. The RTP heating system is composed of a chamber; a support member located in the chamber; a heating element mounted in the chamber for emitting infrared rays for heating; and a plurality of temperature sensors and a temperature control device for sensing and controlling thermal sources from the heating element and the support member. The infrared rays can be mostly reflected off the Mo layer to apply less direct heating to the glass substrate. Accordingly, the upper and lower surfaces of the photovoltaic-device intermediate product can be heated under different temperatures separately to prevent the glass substrate below the photovoltaic-device intermediate product from softening and deformation and to allow production of the light absorption layer on the Mo layer.

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Номер записи: 3

05-01-2012 дата публикации

High Throughput Solar Cell Ablation System

Номер: US20120003788A1

Автор: Gabriel Harley, John Viatella, Peter John Cousins, Thomas Pass

Принадлежит: Individual

A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

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Номер записи: 4

28-02-2020 дата публикации

Прозрачный гетеропереход на основе оксидов

Номер: RU0000196426U1

Автор: Алексей Евгеньевич Романов, Владислав Евгеньевич Бугров, Елена Валерьевна Ширшнева-Ващенко, Женевьева Геннадьевна Снежная, Лилия Александровна Сокура, Павел Сергеевич Ширшнев

Принадлежит: федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО)

Полезная модель представляет собой структуру и выбор материалов для изготовления прозрачного гетероперехода, в котором оба слоя n- и р-типа проводимости изготавливаются методом золь-гель технологии.Прозрачный гетеропереход на основе оксидов, содержащий подложку с последовательно нанесенными пленкой алюмината меди в качестве р-слоя и поликристаллической пленкой оксида цинка легированного алюминием в качестве n-слоя, а также с серебряными электродами, нанесенными на эти слои, отличающийся тем, что подложка выполнена из плавленого кварца, пленка оксида цинка выполнена толщиной от 82 до 87 нм, легирована алюминием с молярным соотношением Zn:Al, 1:0,03, размер ее зерен равен 9-12 нм, пленка алюмината меди выполнена толщиной от 75 до 85 нм, легирована хромом с молярным соотношением Cu:Al:Cr, 1:0,5:0,5, представляет собой поликристаллический слой с размером зерен 50-57 нм, поликристаллические зерна оксида цинка легированного алюминием ориентированы осями [101] и [100] относительно направлений [101] и [006] поликристаллов алюмината меди легированного хромом с рассогласованием менее 1%.Предложенные структура и состав устройства обеспечивают улучшение планарности границы гетероперехода, тем самым увеличивая значение оптического пропускания гетероструктуры в видимом и ближнем ИК-диапазонах. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 196 426 U1 (51) МПК H01L 31/109 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/109 (2020.01) (21)(22) Заявка: 2019144309, 27.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 28.02.2020 (45) Опубликовано: 28.02.2020 Бюл. № 7 Адрес для переписки: 197101, Санкт-Петербург, Кронверкский пр., 49, Университет ИТМО, ОИС и НТИ 1 9 6 4 2 6 U 1 (56) Список документов, цитированных в отчете о поиске: RU 2667689 C2, 24.09.2018. RU 2394305 C2, 10.07.2010. RU 2703519 C1, 18.10.2019. RU 2416135 C2, 10.04.2011. RU 2593915 C2, 10.08.2016. RU 2701467 C1, 26.09.2019. RU ...

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Номер записи: 5

12-01-2012 дата публикации

Thin Silicon Sheets for Solar Cells

Номер: US20120006409A1

Автор: Andrew William Blakers, Klaus Johannes Weber

Принадлежит: Transform Solar Pty Ltd

A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the base of the trenches; anisotropically etching lateral channels ( 4 ) from the second trenches, until adjacent etch fonts ( 16 ) substantially meet; and detaching said layer from the substrate. The trenches may be arranged so that the resultant layer has rows of slots, with the slots in adjacent rows being mutually offset. Solar cells may be formed on strips having two electrical contacts on the same face ( 6 ) of each strip ( 5 ).

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Номер записи: 6

12-01-2012 дата публикации

Solid imaging device

Номер: US20120007149A1

Автор: Hisanori Suzuki, Kentaro Maeta, Masaharu Muramatsu, Yasuhito Yoneta

Принадлежит: Hamamatsu Photonics KK

In a solid-state imaging device 1 , an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16 1 to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V 1 to V 5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4 , whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

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Номер записи: 7

19-01-2012 дата публикации

Black silicon based metal-semiconductor-metal photodetector

Номер: US20120012967A1

Автор: Anyuan Zhang, Guodong Zhao, JING Jiang, Wei Li, Yadong Jiang, Zhengyu Guo, Zhiming Wu

Принадлежит: University of Electronic Science and Technology of China

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

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Номер записи: 8

19-01-2012 дата публикации

Support structures for various apparatuses including opto-electrical apparatuses

Номер: US20120015163A1

Автор: Gang He, Melissa Archer, Thomas J. Gmitter

Принадлежит: Awbscqemgk Inc

Present embodiments generally relate to support structures for thin film components and methods for fabricating the support structures. In one embodiment, an apparatus comprises a device structure including portions of an electronic device; a support structure coupled to the device structure; wherein the support structure supplements features of the device structure and the support structure includes: a metal component coupled to the device structure; and a non-metal component coupled to the metal component. The support component can supplement structural and mechanical integrity of the device structure and functional operations of the device structure. In one embodiment, the metal component includes at least one layer of metal material and the non-metal component includes at least one layer of non metal material (e.g., polymeric material, etc.). The metal component can have greater stiffness characteristics with respect to the device structure and the non-metal component can have greater flexibility characteristics with respect to the metal layer component. The support structure can be configured to reflect light towards the device structure. The support structure can also be configured to conduct electricity from the device structure.

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Номер записи: 9

26-01-2012 дата публикации

Buffer layer formation

Номер: US20120017983A1

Автор: Markus E. Beck

Принадлежит: Individual

Manufacturing a photovoltaic device can include a vapor transport deposition process.

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Номер записи: 10

26-01-2012 дата публикации

Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same

Номер: US20120021558A1

Автор: Kazunari Kurita

Принадлежит: Sumco Corp

There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×10 16 -1×10 17 atoms/cm 3 and solid-soluted oxygen having a concentration of 1.4×10 18 -1.6×10 18 atoms/cm 3 .

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Номер записи: 11

02-02-2012 дата публикации

Charge control of solar cell passivation layers

Номер: US20120024336A1

Автор: Jeong-Mo Hwang

Принадлежит: Amtech Systems Inc

The present invention relates to the charge control of the front and back passivation layers of a solar cell, which allows a common passivation material to be used on both the front and back surfaces of a solar cell. A solar cell according to one embodiment of the present invention comprises an emitter and a base. The cell further includes a first passivation layer adjacent the emitter, the first passivation layer having a charge. The cell also includes a second passivation layer adjacent the base, the second passivation layer having a charge opposite to the charge of the first passivation layer, wherein the first passivation layer and the second passivation layer include a common passivation material. The first and second passivation layers can include any suitable dielectric material capable of holding either a positive or a negative charge, and each of the first and second passivation layers can be charged at any suitable point during manufacture of the cell, including during or after deposition of the passivation layer(s).

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Номер записи: 12

02-02-2012 дата публикации

Back contacting and interconnection of two solar cells

Номер: US20120024368A1

Автор: Andreas Bentzen, Erik Sauar

Принадлежит: Renewable Energy Corp ASA

Method for producing back contacts on silicon solar cells and an interconnection between silicon solar cells where the front surface has been fully treated and the back surface has been processed to the point where the said solar cells can be contacted on the back surface. The method further includes: a) attaching the solar cells onto a transparent superstrate, thereby forming a structure, b) depositing a passivating layer onto the back surface of the structure, c) depositing a silicon material layer onto the back surface of the structure, d) separating the silicon material layer by first areas, e) providing contact sites in areas, f) depositing a metal layer onto the back surface of the structure, g) heating the structure to form silicide, h) optionally opening the metal layer in areas, and i) depositing metal onto the silicide. Device includes solar cells with back contacts and interconnections produced by the method.

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Номер записи: 13

02-02-2012 дата публикации

Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture

Номер: US20120024380A1

Автор: Mark Jeffrey Pavol, Scott Daniel Feldman-Peabody

Принадлежит: Primestar Solar Inc

Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride.

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Номер записи: 14

02-02-2012 дата публикации

Photodetector structure and method of manufacturing the same

Номер: US20120025265A1

Автор: Ho-Chul Ji, Kyoung Ho Ha, Kyoung Won Na, Pil-Kyu Kang

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

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Номер записи: 15

02-02-2012 дата публикации

Mold shape to optimize thickness uniformity of silicon film

Номер: US20120027996A1

Автор: Balram Suman, Glen Bennett Cook, Prantik Mazumder

Принадлежит: Corning Inc

A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

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Номер записи: 16

09-02-2012 дата публикации

Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays

Номер: US20120031461A1

Автор: Daniel Luch

Принадлежит: Daniel Luch

This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections.

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Номер записи: 17

09-02-2012 дата публикации

Compositionally-graded band gap heterojunction solar cell

Номер: US20120031476A1

Автор: Alexander Reznicek, Daniel A. Inns, Devendra K. Sadana, Harold J. Hovel, Jee H. Kim, Stephen W. Bedell

Принадлежит: International Business Machines Corp

A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

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Номер записи: 18

09-02-2012 дата публикации

Production Process For A Semi-Conductor Device And Semi-Conductor Device

Номер: US20120032310A1

Автор: Bernhard KLÖTER, Maximilian Scherff, Peter Engelhart, Stefan BORDIHN

Принадлежит: Q Cells SE

A process for producing a semiconductor device comprises the following process steps: provision of a semiconductor substrate ( 1 ); formation of a functional layer ( 2 ) on a semiconductor surface ( 11 ) of the semiconductor substrate ( 1 ); and production of at least one doped section ( 3 ) on the semiconductor surface ( 11 ) by driving a dopant into the semiconductor substrate ( 1 ) from the functional layer ( 2 ). The functional layer ( 2 ) is formed in such a way that it passivates the semiconductor surface ( 11 ), acting as a passivation layer upon completion of the semiconductor device.

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Номер записи: 19

09-02-2012 дата публикации

Buffer layer deposition for thin-film solar cells

Номер: US20120034726A1

Автор: Jeffrey S. Britt, Scot Albright, Urs Schoop

Принадлежит: Global Solar Energy Inc

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

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Номер записи: 20

09-02-2012 дата публикации

Electrical interconnects for photovoltaic modules and methods thereof

Номер: US20120034799A1

Автор: Thomas Peter Hunt

Принадлежит: Alion Inc

System and method for interconnecting photovoltaic modules. The system includes a first photovoltaic module and a second photovoltaic module. The first photovoltaic module includes a first bus bar and a first interconnect tab connected to the first bus bar. The second photovoltaic module includes a second bus bar and a second interconnect tab connected to the second bus bar. The system for interconnecting photovoltaic modules additionally includes a module interconnector configured to interconnect the first and the second photovoltaic modules. The module interconnector includes an interconnection component and an interconnection protector. Additionally, the system for interconnecting photovoltaic modules includes a first connection component connecting the interconnection component to the first interconnect tab of the first photovoltaic module and a second connection component connecting the interconnection component to the second interconnect tab of the second photovoltaic module.

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Номер записи: 21

16-02-2012 дата публикации

Visible sensing transistor, display panel and manufacturing method thereof

Номер: US20120037912A1

Автор: Dae-Cheol Kim, Hong-Kee Chin, Ki-Hun Jeong, Sung-Ryul Kim, Yun-Jong YEO

Принадлежит: SAMSUNG ELECTRONICS CO LTD

A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

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Номер записи: 22

23-02-2012 дата публикации

Photovoltaic device front contact

Номер: US20120042927A1

Автор: Chungho Lee

Принадлежит: Chungho Lee

A photovoltaic module may contain a front contact configured to transfer electrical current from the module.

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Номер записи: 23

23-02-2012 дата публикации

Solar concentrator

Номер: US20120042949A1

Автор: Eli Shifman

Принадлежит: Aerosun Technologies AG

Apparatus ( 24 ), including a photovoltaic cell ( 22 ) and a concave primary reflector ( 26 ) configured to focus a first portion of incoming radiation toward a focal point ( 30 ). The apparatus also includes a secondary reflector ( 38 ), which is positioned between the concave primary reflector and the focal point so as to direct the focused radiation toward the photovoltaic cell, and which has a central opening ( 44 ) aligned with the photovoltaic cell. The apparatus further includes a transmissive concentrator ( 54 ), positioned so as to focus a second portion of the incoming radiation through the central opening onto the photovoltaic cell.

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Номер записи: 24

23-02-2012 дата публикации

Tailoring the band gap of solar cells made of liquid silane by adding germanium

Номер: US20120042951A1

Автор: Bernhard Stuetzel, Wolfgang Fahrner

Принадлежит: EVONIK DEGUSSA GmbH

The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.

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Номер записи: 25

23-02-2012 дата публикации

Semiconductor device, method for manufacturing same, and display device

Номер: US20120043540A1

Автор: Tomohiro Kimura

Принадлежит: Individual

The present invention provides a semiconductor device capable of suppressing a contact failure due to an increase in contact resistance, a production method of the semiconductor device, and a display device. The present invention provides a semiconductor device which includes a thin-film diode including a crystalline semiconductor layer which includes a cathode region and an anode region, a cathode electrode connected to the cathode region, and an anode electrode connected to the anode region, the thin-film diode, the cathode electrode, and the anode electrode being disposed on a substrate, and which is featured in that the crystalline semiconductor layer includes a first low-impurity-concentration region having an impurity concentration lower than the impurity concentration of the cathode region, in that the first low-impurity-concentration region is arranged adjacent to the cathode region, and in that the cathode electrode is in contact with an area of the cathode region, the area being within 3 μm from the boundary at which the cathode region is in contact with the first low-impurity-concentration region.

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Номер записи: 26

01-03-2012 дата публикации

Photovoltaic device interconnect

Номер: US20120048333A1

Автор: Jianjun Wang, Oleh P. Karpenko

Принадлежит: Individual

Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.

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Номер записи: 27

01-03-2012 дата публикации

Silicon-based photovoltaic device produced by essentially electrical means

Номер: US20120048376A1

Автор: Boris Gilman

Принадлежит: Alexander Shkolnik

A photovoltaic device that includes a silicon substrate, selective emitters and field-induced emitters (inversion type) on one side of a silicon substrate; selective back-surface field (BSF) regions or front-surface field (FSF) regions on the other side of the silicon substrate (accumulation-type regions), insulating films on both sides of the silicon substrate, fixed charges of the opposite signs on the opposite sides of the silicon substrate built in the insulating films, respectively, and self-aligned contact regions at least to the selective emitters. A majority of the aforementioned components are produced only by essentially electrical means and without conventional thermal diffusion and masking processes. Entire devices can be manufactured according to a simple method and are characterized by high efficiency, reduced cost, and increased throughput in the field of solar cell fabrication.

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Номер записи: 28

08-03-2012 дата публикации

Method of fabricating epitaxial structures

Номер: US20120058591A1

Автор: Brad M. Siskavich

Принадлежит: Spire Corp

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

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Номер записи: 29

15-03-2012 дата публикации

Fabrication Of Solar Cells With Silicon Nano-Particles

Номер: US20120060904A1

Автор: David D. Smith, Taeseok Kim

Принадлежит: SunPower Corp

A solar cell structure includes silicon nano-particle diffusion regions. The diffusion regions may be formed by printing silicon nano-particles over a thin dielectric, such as silicon dioxide. A wetting agent may be formed on the thin dielectric prior to printing of the nano-particles. The nano-particles may be printed by inkjet printing. The nano-particles may be thermally processed in a first phase by heating the nano-particles to thermally drive out organic materials from the nano-particles, and in a second phase by heating the nano-particles to form a continuous nano-particle film over the thin dielectric.

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Номер записи: 30

15-03-2012 дата публикации

Nanowires formed by employing solder nanodots

Номер: US20120060905A1

Автор: Devendra K. Sadana, Jae-Woong Nah, Jeehwan Kim, Keith E. Fogel, Kuen-Ting Shiu

Принадлежит: International Business Machines Corp

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

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Номер записи: 31

15-03-2012 дата публикации

Energy conversion device for photovoltaic cells

Номер: US20120060918A1

Автор: Mark B. Spitzer

Принадлежит: Photonic Glass Corp

An energy conversion device is provided for use, for example, in a photovoltaic solar cell. The device includes an up conversion composite material disposed in cavities in a semiconductor material or in a heat spreader bonded to the solar cell. The up conversion composite material is formed from a mixture of at least two different up conversion materials formed as crystal grains dispersed within an optically transmitting dispersion medium. The up conversion materials may include a crystal material doped with dopant atoms capable of absorbing photons having wavelengths longer than an absorption edge of the semiconductor material and emitting photons having wavelengths shorter than the absorption edge. In this manner, more photons can be utilized in the solar cell and optical coupling between the semiconductor material and the up conversion material is increased,

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Номер записи: 32

15-03-2012 дата публикации

Semiconductor for sensing infrared radiation and method thereof

Номер: US20120061572A1

Автор: Robert HANNEBAUER

Принадлежит: Hanvision Co Ltd, Lumiense Photonics Inc

The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

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Номер записи: 33

22-03-2012 дата публикации

Flexible Monocrystalline Thin Silicon Cell

Номер: US20120067423A1

Автор: Anthony Lochtefeld, Chris Leitz

Принадлежит: Amberwave Inc

A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.

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Номер записи: 34

22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1

Автор: Patrick Nickels, Susumu Komiyama

Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

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Номер записи: 35

22-03-2012 дата публикации

Tandem thin-film silicon solar cell and method for manufacturing the same

Номер: US20120070935A1

Автор: Seung-Yeop Myong

Принадлежит: Individual

A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

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Номер записи: 36

05-04-2012 дата публикации

Photoelectric converter, method of manufacturing photoelectric converter and imaging device

Номер: US20120080675A1

Автор: Daigo Sawaki, Hideyuki Suzuki, Shinji Imai, Takashi Goto, Toshihiro Nakatani, Yoshiki Morita

Принадлежит: Fujifilm Corp

A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.

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Номер записи: 37

05-04-2012 дата публикации

Image Sensing Device and Fabrication Thereof

Номер: US20120080766A1

Автор: Chi-Shao Lin, Chung-Wei Chang, Fang-Ming Huang, Yu-Ping Hu

Принадлежит: Himax Imaging Inc

An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.

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Номер записи: 38

05-04-2012 дата публикации

Integrated Shadow Mask/Carrier for Pattern Ion Implantation

Номер: US20120083102A1

Автор: Atul Gupta, Benjamin Riordon, Kevin Daniels, Nicholas Bateman, Robert Mitchell, Russell Low, Steven Anella

Принадлежит: Varian Semiconductor Equipment Associates Inc

An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

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Номер записи: 39

12-04-2012 дата публикации

REO-Ge Multi-Junction Solar Cell

Номер: US20120085399A1

Автор: Andrew Clark, Michael S. Lebby, Robin Smith

Принадлежит: Translucent Inc

The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

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Номер записи: 40

12-04-2012 дата публикации

Electronic image detection device

Номер: US20120086010A1

Автор: Benoit Giffard, Yvon Cazaux

Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes.

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Номер записи: 41

19-04-2012 дата публикации

Semiconductor substrate for solar cell and solar cell

Номер: US20120090675A1

Автор: Hyungjin Kwon, Hyungwook Choi, Ilhyoung Jung, Indo Chung, Jeongbeom Nam, Jinah Kim, Juhong YANG, Seunghwan SHIM

Принадлежит: LG ELECTRONICS INC

A solar cell include a polycrystalline semiconductor substrate of a p-type, an emitter region of an n-type and forming a p-n junction with the polycrystalline semiconductor substrate, a first electrode connected to the emitter region, and a second electrode connected to the polycrystalline semiconductor substrate, wherein the polycrystalline semiconductor substrate has a pure p-type impurity concentration of substantially 7.2×10 15 /cm 3 to 3.5×10 16 /cm 3 .

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Номер записи: 42

19-04-2012 дата публикации

Photovoltaic cell with buffer zone

Номер: US20120090677A1

Автор: Bernard L. Sater

Принадлежит: MH Solar Co Ltd

Systems and methods that provide a barrier for protection of active layers associated with a vertical multi junction (VMJ) photovoltaic cell. Buffer zone(s) in form of an inactive layer(s) arrangement safe guard the active layers against induced stress or strain resulting from external forces/thermal factors (e.g., welding). The buffer zone can be in form of a rim on a surface of an end layer of a cell unit, to act as a protective boundary for such active layer, and to further partially frame the VMJ cell for ease of handling and transportation.

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Номер записи: 43

19-04-2012 дата публикации

Solar Cell and Manufacturing Method Thereof

Номер: US20120090682A1

Автор: Dong Joon Oh, Eun Joo LEE, Hae Seok Lee, Hyun Woo Lee, Ji Myung Shim, Ji Sun Kim, Jun Young Choi, Kyeong Yeon Cho

Принадлежит: SHIN SUNG HOLDINGS CO Ltd

A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell.

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Номер записи: 44

19-04-2012 дата публикации

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

Номер: US20120091566A1

Автор: Gijs Dingemans, Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels

Принадлежит: Q Cells SE

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

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Номер записи: 45

19-04-2012 дата публикации

Method to electrodeposit nickel on silicon for forming controllable nickel silicide

Номер: US20120091589A1

Автор: Christian Lavoie, Cyril Cabral, Jr., John M. Cotte, Kathryn C. Fisher, Laura L. Kosbar, Xiaoyan Shao, Zhu Liu

Принадлежит: International Business Machines Corp

The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.

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Номер записи: 46

19-04-2012 дата публикации

Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus

Номер: US20120093290A1

Автор: Hiroyuki Kishihara, Koichi Tanabe, Masatomo Kaino, Satoshi Tokuda, Tamotsu Okamoto, Toshinori Yoshimuta

Принадлежит: Institute of National Colleges of Technologies Japan, Shimadzu Corp

According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

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Номер записи: 47

19-04-2012 дата публикации

Composition for manufacturing doped or undoped zinc oxide thin film and method for manufacturing zinc oxide thin film using same

Номер: US20120094019A1

Автор: Kenichi Haga, Koichiro Inaba, Kouichi Tokudome, Kouji Toyota

Принадлежит: Tocoh Finefhem Corp

Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300° C. or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.

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Номер записи: 48

19-04-2012 дата публикации

Novel semiconductor and optoelectronic devices

Номер: US20120094414A1

Автор: Deepak C. Sekar, Zvi Or-Bach

Принадлежит: NuPGA Corp

A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).

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Номер записи: 49

26-04-2012 дата публикации

Solar cell

Номер: US20120097228A1

Автор: Hirofumi Yoshikawa, Makoto Izumi, Tomohiro Nozawa, Yasutaka Kuzumoto

Принадлежит: Sharp Corp

A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

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Номер записи: 50

26-04-2012 дата публикации

Solar Cell and Method Fabricating the Same

Номер: US20120097242A1

Автор: Dong Keun Lee

Принадлежит: LG Innotek Co Ltd

A solar cell according to an embodiment includes a pattern layer arranged on a substrate and including a uneven pattern; a back electrode arranged on the pattern layer; a light absorption layer arranged on the back electrode; a buffer layer on the light absorption layer; and a front layer arranged on the buffer layer. The method fabricating a solar cell according to an embodiment includes forming a pattern layer including a uneven pattern on a substrate; forming a back electrode on the pattern layer; forming a light absorption layer on the back electrode; forming a buffer layer on the light absorption layer; and forming a front electrode on the buffer layer.

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Номер записи: 51

03-05-2012 дата публикации

Composition for producing a filter material for radiation, method for producing a composition for a filter material, material for filtering radiation, and an optoelectronic device comprising the material

Номер: US20120104291A1

Автор: Dirk Sossenheimer, Klaus Hohn, Michael Schumann

Принадлежит: OSRAM Opto Semiconductors GmbH

Composition for producing a filter material for radiation includes a silicone and at least one dye dispersed in the silicone, wherein the composition has a relative transmission of less than 20% for radiation of the wavelength of 400 nm to 700 nm, and has a relative transmission of greater than 50% for radiation of the wavelength of 850 nm to 1025 nm.

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Номер записи: 52

03-05-2012 дата публикации

Ion implanted solar cells with in situ surface passivation

Номер: US20120107998A1

Автор: Ajeet Rohatgi, Ben Damiani, Preston Davis, Vijay Yelundur, Vinodh Chandrasekaran

Принадлежит: Suniva Inc

Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.

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Номер записи: 53

10-05-2012 дата публикации

Method of forming silicide for contact plugs

Номер: US20120112300A1

Автор: Huang-Shun Lin, Yi-Tyng Wu, Yu-Ming Wang

Принадлежит: United Microelectronics Corp

A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a second material layer. The second material layer surrounds the sidewall of the opening, covers part of the bottom of the opening and exposes the metal layer.

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Номер записи: 54

10-05-2012 дата публикации

Manufacturing method of photoelectric conversion device

Номер: US20120115273A1

Автор: Fumito Isaka, Tetsuhiro Tanaka

Принадлежит: Semiconductor Energy Laboratory Co Ltd

A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

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Номер записи: 55

17-05-2012 дата публикации

Method and device for cleaning substrates on a carrier

Номер: US20120118329A1

Автор: Reinhard Huber, Sven Worm

Принадлежит: Gebrueder Schmid GmbH and Co

In the case of a device and a method for cleaning substrates on a carrier, to the underside of which the substrates are fastened so as to be parallel to and slightly apart from one another, the carrier has in its interior a plurality of longitudinal channels, which run parallel to one another. As a result of the sawing of the wafers, they merge, via openings, into interstices between the substrates. As a result of a relative movement, an elongate tube, from which cleaning fluid is let out, is introduced into one of the longitudinal channels, the relative movement being achieved substantially through moving of the carrier.

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Номер записи: 56

17-05-2012 дата публикации

Photovoltaic device

Номер: US20120118374A1

Автор: Seung-Yeop Myong

Принадлежит: Individual

Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer.

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Номер записи: 57

17-05-2012 дата публикации

Selenization of precursor layer containing culns2 nanoparticles

Номер: US20120122268A1

Автор: Hugh Hillhouse, Qijie Guo, Rakesh Agrawal

Принадлежит: PURDUE RESEARCH FOUNDATION

A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS 2 , CuIn(S y ,Se 1−y ) 2 , CuGaS 2 , CuGa(S y ,Se 1−y ) 2 , Cu(In x Ga 1−x )S 2 , and Cu(In x Ga 1−x )(S y ,Se 1−y ) 2 nanoparticles and combinations thereof, wherein 0≦x≦1 and 1≦y≦0.

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Номер записи: 58

17-05-2012 дата публикации

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

Номер: US20120122304A1

Автор: Robert D. Wieting

Принадлежит: CM Manufacturing Inc

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

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Номер записи: 59

24-05-2012 дата публикации

Selective emitter solar cells formed by a hybrid diffusion and ion implantation process

Номер: US20120125416A1

Автор: Ajeet Rohatgi, Ben Damiani, Preston Davis, Vijay Yelundur, Vinodh Chandrasekaran

Принадлежит: Suniva Inc

Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.

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Номер записи: 60

24-05-2012 дата публикации

Light emitting device, manufacturing method thereof, and optical device

Номер: US20120126269A1

Автор: Yuki Tanuma

Принадлежит: ROHM CO LTD

The present invention provides a light emitting device which is capable of enhancing the radiant intensity on a single direction. The light emitting device comprises a substrate, a lens bonded to the substrate, and an LED chip bonded to the substrate and exposed in a gap clipped between the substrate and the lens, wherein the lens has a light output surface which bulges in a direction that is defined from the substrate toward the LED chip and is contained in a thickness direction of the substrate to transmit the light emitted from the LED chip.

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Номер записи: 61

31-05-2012 дата публикации

Carbon nanotube dispersion and method of preparing transparent electrode using the carbon nanotube dispersion

Номер: US20120132862A1

Автор: Hyeon-jin SHIN, Jae-Young Choi, Seon-mi Yoon, Seong-jae CHOI

Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided is a carbon nanotube dispersion including: carbon nanotubes, a solvent, and a dispersant, in which a mutifunctional ethylene oxide-propylene oxide block copolymer acts as the dispersant. The carbon nanotube dispersion provides excellent dispersion stability in aqueous and organic systems. Therefore, the carbon nanotube dispersion is suitable for a transparent electrode.

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Номер записи: 62

07-06-2012 дата публикации

Multilayer transparent light-receiving device and electronic device

Номер: US20120141831A1

Автор: Seiji Yamada, Wei Luo, Yoshio Goto, Yuichi Tokita

Принадлежит: Sony Corp

A multilayer transparent light-receiving device with significantly high photoresponsive speed that is easily manufactured, and a high-performance electronic device using the multilayer transparent light-receiving device are provided. The multilayer transparent light-receiving device is composed by laminating a plurality of protein transparent light-receiving elements using an electron transfer protein. The protein transparent light-receiving element has a structure in which a transparent substrate, a transparent electrode, an electron transfer protein layer, an electrolyte layer, and a transparent counter electrode are sequentially laminated. The multilayer transparent light-receiving device is used as a light-receiving device for a camera, an optical disc system and the like.

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Номер записи: 63

14-06-2012 дата публикации

Apparatus and Method for Hybrid Photovoltaic Device Having Multiple, Stacked, Heterogeneous, Semiconductor Junctions

Номер: US20120145231A1

Автор: Joseph H. Armstrong, Lawrence M. Woods

Принадлежит: Individual

A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.

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Номер записи: 64

14-06-2012 дата публикации

Photosensor, semiconductor device, and liquid crystal panel

Номер: US20120146028A1

Автор: Akihiro Oda, Seiji Kaneko

Принадлежит: Sharp Corp

The light use efficiency of a thin film diode is improved even when the semiconductor layer of the diode has a small thickness, thereby improving the light detection sensitivity of the diode. Further, a short circuit between the electrodes of the thin film diode via the light-blocking layer is prevented. A thin film diode ( 130 ) having a first semiconductor layer ( 131 ) including, at least, an n-type region ( 131 n ) and a p-type region ( 131 p ) is provided on one side of a substrate ( 101 ), and a light-blocking layer ( 160 ) is provided between the substrate and the first semiconductor layer. A metal oxide layer ( 180 ) is provided on the side of the light-blocking layer facing the first semiconductor layer. Asperities are provided on the side of the metal oxide layer facing the first semiconductor layer, and the first semiconductor layer has a geometry of asperities conforming with the asperities on the metal oxide layer.

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Номер записи: 65

21-06-2012 дата публикации

Solar cell and method for manufacturing the same

Номер: US20120152338A1

Автор: Jinho Kim, Jungmin Ha, Junyong Ahn

Принадлежит: LG ELECTRONICS INC

A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity region having a second conductivity type, heating the substrate with the first impurity region to activate the first impurity region to form an emitter region, etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part, and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate, which is opposite the first surface of the substrate to connect to the second surface of the substrate.

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Номер записи: 66

21-06-2012 дата публикации

Light-assisted biochemical sensor

Номер: US20120153407A1

Автор: Chao-Sung Lai, Liann-Be Chang, Po-Chuan Chen

Принадлежит: Chang Gung University CGU

A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.

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Номер записи: 67

21-06-2012 дата публикации

Methods for forming a transparent oxide layer for a photovoltaic device

Номер: US20120156828A1

Автор: Hongying Peng, Juan Carlos Rojo, Robert Dwayne Gossman, Steven Jude Duclos

Принадлежит: General Electric Co

A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.

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Номер записи: 68

28-06-2012 дата публикации

Affecting the thermoelectric figure of merit (zt) and the power factor by high pressure, high temperature sintering

Номер: US20120161084A1

Автор: Abds-Sami Malik, Francis J. DiSalvo, Yongkwan Dong

Принадлежит: Diamond Innovations Inc

A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.

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Номер записи: 69

28-06-2012 дата публикации

Photodetector using a graphene thin film and nanoparticles, and method for producing the same

Номер: US20120161106A1

Автор: Dong-Ick Son, Hee-Yeon Yang, Jae-Hun Jung, Jung-Min Lee, Tae-Whan Kim, Won-Il Park

Принадлежит: Industry University Cooperation Foundation IUCF HYU

Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.

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Номер записи: 70

28-06-2012 дата публикации

Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof

Номер: US20120161130A1

Автор: Emi Koezuka, Koichiro Tanaka, Sho Kato, Takashi Hirose, Yuji Oda

Принадлежит: Semiconductor Energy Laboratory Co Ltd

A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

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Номер записи: 71

28-06-2012 дата публикации

Method of Manufacturing a Printable Composition of a Liquid or Gel Suspension of Diodes

Номер: US20120164796A1

Автор: Brad Oraw, Eric Anthony Perozziello, Jeffrey Baldridge, Mark Allan Lewandowski, Mark David Lowenthal, Neil O. Shotton, Richard A. Blanchard, William Johnstone Ray

Принадлежит: NthDegree Technologies Worldwide Inc

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of making a liquid or gel suspension of diodes comprises: adding a viscosity modifier to a plurality of diodes in a first solvent; and mixing the plurality of diodes, the first solvent and the viscosity modifier to form the liquid or gel suspension of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.

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Номер записи: 72

05-07-2012 дата публикации

Peeling apparatus and manufacturing apparatus of semiconductor device

Номер: US20120168066A1

Автор: Atsuhiro Tani, Kenichi Hashimoto, Misako Hirosue, Shingo Eguchi, Yasuharu Hosaka, Yohei Monma

Принадлежит: Semiconductor Energy Laboratory Co Ltd

To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.

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Номер записи: 73

05-07-2012 дата публикации

Method and Apparatus for Forming a Thin Lamina

Номер: US20120168091A1

Автор: Adam KELL, Gopal Prabhu, Joseph D. Gillespie, Robert CLARK-PHELPS, Steve BABABYAN, Steve Zuniga, Takao Sakase, Theodore H. Smick

Принадлежит: Twin Creeks Technologies Inc

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

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Номер записи: 74

05-07-2012 дата публикации

Photosensor and Method of Manufacturing the Same

Номер: US20120168745A1

Автор: Jae-Beom Choi, Jae-Hwan Oh, Seong-Hyun Jin, Won-Kyu Lee, Young-Jin Chang

Принадлежит: Samsung Mobile Display Co Ltd

In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.

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Номер записи: 75

05-07-2012 дата публикации

Method and apparatus for masking substrates for deposition

Номер: US20120171807A1

Автор: Alexander J. Berger, Chau T. NGUYEN, Greg Stumbo, Judy Huang, Karthik Janakiraman, Terry Bluck, Vinay Shah

Принадлежит: Intevac Inc

Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.

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Номер записи: 76

12-07-2012 дата публикации

Template for three-dimensional thin-film solar cell manufacturing and methods of use

Номер: US20120174860A1

Автор: Mehrdad Moslehi

Принадлежит: Solexel Inc

A template 100 for three-dimensional thin-film solar cell substrate formation for use in three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between said plurality of posts 102 . The template 100 forms an environment for three-dimensional thin-film solar cell substrate formation.

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Номер записи: 77

12-07-2012 дата публикации

Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels

Номер: US20120178202A1

Автор: Mohd Aslami

Принадлежит: Individual

A plasma vapor deposition system for making multi-junction silicon thin film solar cell modules and panels including a flexible substrate disposed about and removably supported by a dual-walled cylindrical substrate support for axially rotating the flexible substrate about its longitudinal axis, the dual-walled cylindrical substrate support comprising an inner wall spaced apart by an outer wall to define a coaxial cavity; a plasma vapor deposition torch located substantially adjacent to the flexible substrate for depositing at least one thin film material layer on an outer surface of the flexible substrate; and a traversing platform for supporting the rotatable substrate support relative to the plasma vapor deposition torch, the rotatable substrate support being traversed along its longitudinal axis by the traversing platform.

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Номер записи: 78

12-07-2012 дата публикации

Methods of manufacturing solar cell

Номер: US20120178205A1

Автор: Yong-Duck Chung

Принадлежит: Electronics and Telecommunications Research Institute ETRI

Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

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Номер записи: 79

19-07-2012 дата публикации

Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same

Номер: US20120181503A1

Автор: Czang-Ho Lee, Dong-Jin Kim, Joon-Young Seo

Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung SDI Co Ltd

Disclosed are a method of fabricating a silicon quantum dot layer and a device manufactured using the same. A first capping layer is formed on a substrate, and a silicon-containing precursor layer is formed on the first capping layer. A second capping layer is formed on the silicon-containing precursor layer. The first capping layer, the silicon-containing precursor layer, and the second capping layer are irradiated to convert the silicon-containing precursor layer into a stack including a first poly-crystalline silicon layer, a silicon quantum dot layer on the first poly-crystalline silicon layer, and a second poly-crystalline silicon layer on the silicon quantum dot layer.

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Номер записи: 80

19-07-2012 дата публикации

Method of manufacturing photoelectric conversion device

Номер: US20120184064A1

Автор: Fumito Isaka, Koji Dairiki, Sho Kato

Принадлежит: Semiconductor Energy Laboratory Co Ltd

A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

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Номер записи: 81

26-07-2012 дата публикации

Light sensor having transparent substrate and through-substrate vias

Номер: US20120187281A1

Автор: Arkadii V. Samoilov, Joy T. Jones, Nicole D. Kerness, Zhihai Wang

Принадлежит: Maxim Integrated Products Inc

Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

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Номер записи: 82

26-07-2012 дата публикации

METHOD FOR THE ACTIVATION OF CdTe THIN FILMS FOR THE APPLICATION IN CdTe/CdS TYPE THIN FILM SOLAR CELLS

Номер: US20120190151A1

Автор: Alessandro Romeo, Alessio Bosio, Nicola Romeo

Принадлежит: ARENDI SpA

A method for activation of CdTe films used in CdTe/CdS type thin film solar cells is described, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon. The fluorine-free chlorinated hydrocarbon and the gaseous chlorine-free fluorinated hydrocarbon are harmless to the ozone layer.

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Номер записи: 83

02-08-2012 дата публикации

Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof

Номер: US20120192934A1

Автор: Ali Javey, Zhiyong Fan

Принадлежит: UNIVERSITY OF CALIFORNIA

An embodiment of nanostructure includes a conductive substrate; an insulating layer on the conductive substrate, metal nanoparticles, and elongated single crystal nanostructures. The insulating layer includes an array of pore channels. The metal nanoparticles are located at bottoms of the pore channels. The elongated single crystal nanostructures contact the metal nanoparticles and extend out of the pore channels. An embodiment of a photovoltaic device includes the nanostructure and a photoabsorption layer. An embodiment of a method of fabricating a nanostructure includes forming an insulating layer on a conductive substrate. The insulating layer has pore channels arranged in an array. Metal nanoparticles are formed in the pore channels. The metal nanoparticles conductively couple to the conductive layer. Elongated single crystal nanostructures are formed in the pore channels. A portion of the insulating layer is etched away, which leaves the elongated single crystal nanostructures extending out of the insulating layer.

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Номер записи: 84

09-08-2012 дата публикации

Robotic solar panel string assembly process

Номер: US20120199266A1

Автор: David S. Potter, Jeffrey Paul Munoz, Nathan Dion Fleischer

Принадлежит: Chevron USA Inc

The present invention is directed to a process for manufacture of a solar panel string assembly for a solar canopy including: horizontally aligning two solar panel support channels substantially parallel to one another; applying an adhesive with a robotic tool to an upper portion of the solar panel support channels, the robotic tool comprising a fixed track aligned parallel with the two solar panel support channels, a robotic arm assembly movably supported by the track, a positioning member for adjusting the position of the robotic arm assembly along the track, and wherein the robotic arm comprises an adhesive applicator and a vacuum lift component; and lifting with the vacuum lift component of the robot arm assembly of the robotic tool and aligning a solar panel on top of the two solar panel support channels near opposing edges of the solar panel.

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Номер записи: 85

09-08-2012 дата публикации

Process for producing doped silicon layers, silicon layers obtainable by the process and use thereof

Номер: US20120199832A1

Автор: Bernhard Stuetzel, Wolfgang Fahrner

Принадлежит: EVONIK DEGUSSA GmbH

The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.

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Номер записи: 86

09-08-2012 дата публикации

Method and apparatus for forming the separating lines of a photovoltaic module with series-connected cells

Номер: US20120202313A1

Автор: Walter Psyk

Принадлежит: SCHOTT SOLAR AG

For forming the separating lines, ( 5, 6, 7 ) which are produced in the functional layers ( 2, 3, 4 ) deposited on a transparent substrate ( 1 ) during manufacture of a photovoltaic module with series-connected cells (C 1 , C 2 , . . . ), there are used laser scanners ( 8 ) whose laser beam ( 14 ) produces in the field ( 17 ) scanned thereby a plurality of adjacent separating line sections ( 18 ) in the functional layer ( 2, 3, 4 ). The laser scanners ( 8 ) are then moved relative to the coated substrate ( 1 ) in the direction (Y) of the separating lines ( 5, 6, 7 ) by a distance corresponding at the most to the length (L) of the scanned field ( 17 ) to thereby form continuous separating lines ( 5, 6, 7 ) through mutually flush separating line sections ( 18 ).

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Номер записи: 87

16-08-2012 дата публикации

Process and structures for fabrication of solar cells

Номер: US20120204926A1

Автор: Ann Waldhauer, David D. Smith, Gabriel Harley, Peter John Cousins, Taeseok Kim, Tim Dennis

Принадлежит: Individual

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

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Номер записи: 88

16-08-2012 дата публикации

Correction wedge for leaky solar array

Номер: US20120204956A1

Автор: John T. Apostolos, Judy Feng, William Mouyos

Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

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Номер записи: 89

16-08-2012 дата публикации

High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof

Номер: US20120205665A1

Автор: Dong Hun Lee, Geun Ho Yoo, Ok Hyun Nam

Принадлежит: Industry Academic Cooperation Foundation of Korea Polytechnic University, Seoul Optodevice Co Ltd

Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

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Номер записи: 90

16-08-2012 дата публикации

Orthogonal scattering features for solar array

Номер: US20120206807A1

Автор: John T. Apostolos, Judy Feng, William Mouyos

Принадлежит: AMI Research and Development LLC

A leaky travelling wave array of optical elements provide a solar wavelength rectenna.

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Номер записи: 91

23-08-2012 дата публикации

Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell

Номер: US20120211068A1

Автор: Arthur Cornfeld, Benjamin Cho, Daniel J. Aiken, John Spann, Mark A. Stan, Paul R. Sharps, Pravin Patel

Принадлежит: Emcore Solar Power Inc

A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.

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Номер записи: 92

23-08-2012 дата публикации

Photovoltaic cell conductor consisting of two, high-temperature and low-temperature, screen-printed parts

Номер: US20120211856A1

Автор: Armand Bettinelli, Yannick Veschetti

Принадлежит: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA

Method for formation of at least one electrical conductor on a semiconductor material ( 1 ), characterized in that it comprises the following steps: (E1)—deposition by serigraphy of a first high-temperature paste; (E2)—deposition by serigraphy of a second low-temperature paste at least partially superposed onto the first high-temperature paste deposited during the preceding step.

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Номер записи: 93

23-08-2012 дата публикации

Optocoupler Circuit

Номер: US20120213466A1

Автор: Dusan Golubovic, Gerhard Koops, Rob Van Dalen, Tony Vanhoucke

Принадлежит: Individual

An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

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Номер записи: 94

23-08-2012 дата публикации

Manufacture method for photovoltaic module

Номер: US20120214271A1

Автор: Shingo Okamoto, Yousuke Ishii

Принадлежит: Sanyo Electric Co Ltd

The invention permits a plurality of strips of resin adhesive film having a desired width and unwound from a single feeding reel to be simultaneously pasted on a solar cell. For this purpose, the invention comprises the steps of: unwinding a resin adhesive film sheet from a reel on which the resin adhesive film sheet is wound; splitting the unwound resin adhesive film into two or more film strips in correspondence to lengths of wiring material to bond; pasting the strips of resin adhesive film on an electrode of the solar cell; and placing the individual lengths of wiring material on the electrode of the solar cell having the plural strips of resin adhesive film pasted thereon and thermally setting the resin adhesive film by heating so as to fix together the electrode of the solar cell and the wiring material.

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Номер записи: 95

23-08-2012 дата публикации

Angled multi-step masking for patterned implantation

Номер: US20120214273A1

Автор: Atul Gupta, Benjamin Riordon, Nicholas Bateman

Принадлежит: Varian Semiconductor Equipment Associates Inc

An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.

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Номер записи: 96

30-08-2012 дата публикации

Method for manufacture and structure of multiple electrochemistries and energy gathering components within a unified structure

Номер: US20120219830A1

Автор: Ann Marie Sastry, Chia Wei Wang, Fabio Albano

Принадлежит: Sakti3 Inc

A method for using an integrated battery and device structure includes using two or more stacked electrochemical cells integrated with each other formed overlying a surface of a substrate. The two or more stacked electrochemical cells include related two or more different electrochemistries with one or more devices formed using one or more sequential deposition processes. The one or more devices are integrated with the two or more stacked electrochemical cells to form the integrated battery and device structure as a unified structure overlying the surface of the substrate. The one or more stacked electrochemical cells and the one or more devices are integrated as the unified structure using the one or more sequential deposition processes. The integrated battery and device structure is configured such that the two or more stacked electrochemical cells and one or more devices are in electrical, chemical, and thermal conduction with each other.

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Номер записи: 97

06-09-2012 дата публикации

Heterojunction Solar Cell Having Amorphous Silicon Layer

Номер: US20120222731A1

Автор: Fang-Chi Hsieh, Li-Karn Wang

Принадлежит: Jiangsu Aide Solar Energy Technology Co Ltd, National Tsing Hua University NTHU

The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO 2 ) layer is grown on the doped Si substrate and beneath the amorphous Si layer. A heterojunction interface and a homojunction interface are formed in the solar cell in a one-time diffusion. Thus, a heterojunction solar cell can be easily fabricated and utilities compatible to those used in modern production can still be used for reducing cost.

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Номер записи: 98

13-09-2012 дата публикации

Process for operating a stringer and stringer apparatus

Номер: US20120228362A1

Автор: Bernd Hirzler, Martin Schultis

Принадлежит: SOMONT GMBH

A process for operating a stringer ( 10 ) for connecting solar cells in series by solder ribbon cut-offs cut from continuous solder ribbon strip, includes monitoring depletion of the momentarily-employed continuous solder ribbon strip ( 13 a ) by a monitoring unit ( 16 ) detecting when the end ( 17 ) of this strip ( 13 a ) approaches, entering a new roll ( 2 ) with a new continuous solder ribbon strip ( 13 b ), connecting the end ( 17 ) of the momentarily-employed strip ( 13 a ) to this new strip ( 13 b ) thereby forming a composite continuous solder ribbon strip that includes a connection, moving this composite strip to a cutting station ( 14 ), cutting this composite strip into solder ribbon cut-offs in cutting station ( 14 ), and removing the ribbon cut-off that includes this connection. Also, stringer apparatus for performing such process.

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Номер записи: 99

13-09-2012 дата публикации

Continuous Electroplating Apparatus with Assembled Modular Sections for Fabrications of Thin Film Solar Cells

Номер: US20120231574A1

Автор: Jiaxiong Wang

Принадлежит: Individual

An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process.

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Номер записи: 100

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