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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3267. Отображено 100.
16-02-2012 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20120040518A1
Автор: Boil Pashmakov, David Strand, Patrick Klersy, Stanford R. Ovshinsky
Принадлежит: Boil Pashmakov, David Strand, Ovshinsky Stanford R, Patrick Klersy

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

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Номер записи: 1
15-03-2012 дата публикации

Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method

Номер: US20120064726A1
Автор: Jun Hashimoto, Masaru Sasaki, Shota Yoshimura, Tetsuya Nishizuka, Toshihisa Nozawa, Toshihisa Ozu
Принадлежит: Tokyo Electron Ltd

There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

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Номер записи: 2
22-03-2012 дата публикации

Surface wave plasma cvd apparatus and film forming method

Номер: US20120067281A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.

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Номер записи: 3
14-06-2012 дата публикации

Surface wave plasma cvd apparatus and layer formation method

Номер: US20120148763A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus, includes: a waveguide ( 3 ) that is connected to a microwave source ( 2 ), and in which a plurality of slot antennas (S) are formed thereof; a dielectric plate ( 4 ) for conducting microwaves emitted from the plurality of slot antennas (S) into a plasma processing chamber ( 1 ) so that a surface wave plasma is produced; an insulating shield member (lb) that is arranged so as to surround a layer formation processing region (R) in which the surface wave plasma is produced; and a gas ejection portion ( 52 ) that ejects process material gas into the layer formation processing region (R).

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Номер записи: 4
21-06-2012 дата публикации

Microwave antenna for generating plasma

Номер: US20120153825A1
Автор: Bong Ju Lee, Hyun Jong You, Soo Ouk Jang, Yong Ho Jung
Принадлежит: Korea Basic Science Institute KBSI

The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

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Номер записи: 5
28-06-2012 дата публикации

Plasma processing apparatus and substrate processing method

Номер: US20120160809A1
Автор: Kiyotaka Ishibashi, Osamu Morita
Принадлежит: Tokyo Electron Ltd

A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32 . The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47 . The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

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Номер записи: 6
19-07-2012 дата публикации

Semiconductor device manufacturing method

Номер: US20120184107A1
Автор: Tatsuo Nishita, Toshihiko Shiozawa, Yoshihiro Hirota, Yoshihiro Sato
Принадлежит: Tokyo Electron Ltd

In a semiconductor device manufacturing method, the formation of a sacrificial oxide film and removal thereof by wet etching and/or the formation of a silicon dioxide film and removal thereof by wet etching are performed. In the process for manufacturing a semiconductor device, the formation of the sacrificial oxide film and/or the silicon dioxide film is performed within a processing chamber of a plasma processing apparatus using a plasma in which O( 1 D 2 ) radicals produced using a processing gas that contains oxygen are dominant.

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Номер записи: 7
02-08-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120193633A1
Автор: Akihiko Kohno, Kohichi Tanaka, Toshio Mizuki
Принадлежит: Sharp Corp

A method for fabricating a semiconductor device according to the present invention includes the steps of: (a) providing a substrate ( 11 a ) in a chamber ( 26 ); (b) supplying a microwave into the chamber ( 26 ) through a dielectric plate ( 24 ), of which one surface that faces the chamber is made of alumina, thereby depositing a microcrystalline silicon film ( 14 ) with an aluminum concentration of 1.0×10 16 atoms/cm 3 or less on the substrate ( 11 a ) by high-density plasma CVD process; and (c) making a thin-film transistor that uses the microcrystalline silicon film as its active layer. As a result, a semiconductor device including a TFT that uses a microcrystalline silicon film with a mobility of more than 0.5 cm 2 /Vs as its active layer is obtained.

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Номер записи: 8
13-12-2012 дата публикации

Crystalline silicon film forming method and plasma cvd apparatus

Номер: US20120315745A1
Автор: Daisuke Katayama, Masayuki Kohno, Minoru Honda, Toshio Nakanishi
Принадлежит: Tokyo Electron Ltd

A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si n H 2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.

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Номер записи: 9
03-01-2013 дата публикации

Method and device for plasma-treating workpieces

Номер: US20130004682A1
Автор: Sebastian Kytzia, Sönke SIEBELS
Принадлежит: KHS CORPOPLAST GMBH

The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

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Номер записи: 10
10-01-2013 дата публикации

Silicon oxide film forming method and plasma oxidation apparatus

Номер: US20130012033A1
Автор: Shuichiro Otao, Yoshihiro Sato, Yoshiro Kabe
Принадлежит: Tokyo Electron Ltd

A silicon oxide film forming method includes forming a silicon oxide film by allowing a plasma of a processing gas to react on a silicon exposed on a surface of a target object to be processed in a processing chamber of a plasma processing apparatus. The processing gas includes an ozone-containing gas having a volume ratio of O 3 to a total volume of O 2 and O 3 , ranging 50% or more.

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Номер записи: 11
17-01-2013 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20130017686A1
Автор: Kazuhide Ino, Tadahiro Ohmi, Takahiro Arakawa
Принадлежит: ROHM CO LTD

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7× n /4≦ D ≦1.3× n /4 ( n being a natural number).

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Номер записи: 12
17-01-2013 дата публикации

Plasma nitriding method and plasma nitriding apparatus

Номер: US20130017690A1
Автор: Daisuke Tamura, Hideyuki Noguchi, Kazuyoshi Yamazaki, Koichi Takatsuki, Tomohiro Saito
Принадлежит: Tokyo Electron Ltd

In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects.

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Номер записи: 13
24-01-2013 дата публикации

Plasma nitriding method

Номер: US20130022760A1
Автор: Masaki Sano, Toshinori Debari
Принадлежит: Tokyo Electron Ltd

A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%.

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Номер записи: 14
31-01-2013 дата публикации

Plasma processing method and plasma processing apparatus

Номер: US20130029492A1
Автор: Masakazu Miyaji, Masaki Fujii, Michikazu Morimoto, Tetsuo Ono, Yoshiharu Inoue
Принадлежит: Hitachi High Technologies Corp

A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

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Номер записи: 15
14-02-2013 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20130037755A1
Автор: Stanford R. Ovshinsky
Принадлежит: Stanford R. Ovshinsky

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

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Номер записи: 16
28-03-2013 дата публикации

Microwave processing apparatus and method for processing object to be processed

Номер: US20130075389A1
Автор: Mitsutoshi ASHIDA
Принадлежит: Tokyo Electron Ltd

A microwave processing apparatus includes a processing chamber which accommodates an object; a microwave introducing unit for generating microwaves used to process the object and introducing the microwaves into the processing chamber; and a control unit for controlling the microwave introducing unit. The microwave introducing unit includes microwave sources to generate the microwaves and introduces parts of the microwaves into the processing chamber simultaneously, and the control unit controls the microwave sources such that arbitrary combinations of the microwave sources alternately repeat a simultaneous microwave generating state and a microwave non-generating state during a state of processing the object.

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Номер записи: 17
10-10-2013 дата публикации

Stable surface wave plasma source

Номер: US20130264938A1
Автор: Jianping Zhao, Lee Chen, Merritt Funk, Ronald V. BRAVENEC
Принадлежит: Tokyo Electron Ltd

A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

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Номер записи: 18
14-11-2013 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20130302918A1
Автор: Kazuhide Ino, Tadahiro Ohmi, Takahiro Arakawa
Принадлежит: ROHM CO LTD

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).

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Номер записи: 19
19-12-2013 дата публикации

Microwave power delivery system for plasma reactors

Номер: US20130334964A1
Автор: Christopher John Howard Wort, John Robert Brandon
Принадлежит: Element Six Ltd

(EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors ( 8 ), the microwave power delivery system comprising: a tuner ( 14 ) configured to be coupled to a microwave source ( 4 ) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction ( 18 ) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink ( 20 ), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

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Номер записи: 20
09-01-2014 дата публикации

Plasma processing apparatus and method

Номер: US20140011365A1
Автор: Naoki Yasui, Norihiko Ikeda, Tooru Aramaki, Yasuhiro Nishimori
Принадлежит: Hitachi High Technologies Corp

To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

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Номер записи: 21
09-01-2014 дата публикации

Activated Gaseous Species for Improved Lubrication

Номер: US20140011717A1
Автор: Charles Tomasino, Jackson Thornton, Robert A. Mineo, Vinay G. Sakhrani
Принадлежит: TriboFilm Research Inc

The present application is directed to methods and devices for altering material properties of lubricants and other cross-linkable compounds comprising organic or organometallic materials through exposure to energized gaseous species. The energized gaseous species may create reactive sites among lubricant molecules that may alter their material properties by cross-linking at least a portion of the lubricant molecules. The cross-linked lubricant may reduce the ability of the lubricant to migrate away when force is applied between lubricated sliding friction surfaces.

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Номер записи: 22
06-03-2014 дата публикации

Plasma microwave resonant cavity

Номер: US20140062300A1
Автор: Jinyan Zhang, Ruichun Wang, Xianhui Xia
Принадлежит: Yangtze Optical Fibre and Cable Co Ltd

A plasma microwave resonant cavity used for a plasma chemical vapor deposition (PCVD) apparatus comprises a resonant cavity housing and a waveguide device connected with the cavity housing. Two ends of the cavity housing are provided with coaxial through-holes along the axial direction of the cavity. A glass inner liner is arranged through the through-holes at the two ends, and runs through a cavity body and the through holes at the two ends. The glass inner liner comprises a glass cylinder and glass stop rings arranged at the two ends of the glass cylinder. One or two ends of the glass cylinder are provided with external threads. The glass stop rings are connected with the ends of the glass cylinder ( 1 ) by screw holes formed on the glass stop rings.

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Номер записи: 23
06-01-2022 дата публикации

PLASMA PROCESSING APPARATUS AND CONTROL METHOD

Номер: US20220005739A1
Автор: IKEDA Taro, Osada Yuki
Принадлежит:

A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors. 1. A method of controlling plasma , the method comprising: N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and', 'M sensors configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N, and, 'providing a plasma processing apparatus includingcontrolling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the sensors.2. The method according to claim 1 , wherein the M sensors are provided in correspondence with the N microwave introducing radiators claim 1 , respectively claim 1 ,the method further comprising:controlling at least one of the power and phase of the microwaves introduced from each of the N microwave introducing radiators based on at least one of the electron density Ne and the electron temperature Te of the plasma monitored by each of the M sensors provided in ...

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Номер записи: 24
07-01-2021 дата публикации

Diamond-like carbon synthesized by atmospheric plasma

Номер: US20210002759A1
Автор: Jinqiu Zhang, Masahiro Osugi, Xiaobo Huang
Принадлежит: Samu Technology LLC

A system includes a structure including an upper chamber linked to a lower chamber, the upper chamber including a gas inlet configured to enable a gas to enter the upper chamber, the lower chamber including a plasma outlet, a microwave generator configured to deliver a microwave to the upper chamber causing atoms in the gas to ionize to generate a charged particle microwave plasma, a hollow cathode centrally positioned within the lower chamber and an anode surrounding an interior wall of the lower chamber, and a power source for generating power, the power flowing between the anode and the hollow cathode causing atoms in the gas to ionize to generate a charged particle hollow cathode plasma.

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Номер записи: 25
04-01-2018 дата публикации

SELECTIVE ATOMIC LAYER DEPOSITION WITH POST-DOSE TREATMENT

Номер: US20180005814A1
Автор: Karim Ishtak, KUMAR Purushottam, LaVoie Adrien, Pasquale Frank L., Qian Jun, van Schravendijk Bart J.
Принадлежит:

Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation. 1. A method of processing a patterned substrate in a process chamber , the method comprising:(a) providing the patterned substrate having one or more features;(b) exposing the patterned substrate to a silicon-containing precursor under conditions allowing the silicon-containing precursor to adsorb onto surfaces of the one or more features, thereby forming an adsorbed layer of the silicon-containing precursor over the patterned substrate;(c) before exposing the patterned substrate to a reactant to form a silicon-containing film and after exposing the patterned substrate to the silicon-containing precursor, performing a post-dose treatment operation to preferentially remove the adsorbed layer at tops of the one or more features; and(d) exposing the patterned substrate to the reactant and igniting a first plasma to form the silicon-containing film over the patterned substrate.2. The method of claim 1 , wherein performing the post-dose treatment operation comprises exposing the patterned substrate to a gas selected from the group consisting of nitrogen claim 1 , argon claim 1 , hydrogen claim 1 , ammonia claim 1 , helium claim 1 , and CH claim 1 , wherein x is an integer between and including 1-5 and y is an integer between and including 4-16.3. The method of claim 2 , wherein performing the post-dose treatment operation further comprises igniting a second plasma at a plasma power less than about 6 kW.4. The method of claim 3 , wherein performing the post- ...

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Номер записи: 26
12-01-2017 дата публикации

Plasma processing device

Номер: US20170011890A1
Автор: Kenetsu Yokogawa, Masaru Izawa, Tooru Aramaki
Принадлежит: Hitachi High Technologies Corp

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

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Номер записи: 27
15-01-2015 дата публикации

Microwave plasma processing apparatus

Номер: US20150013913A1
Автор: Jun Yoshikawa, Toshihiko Iwao
Принадлежит: Tokyo Electron Ltd

A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.

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Номер записи: 28
14-01-2016 дата публикации

METHODS FOR HIGH PRECISION ETCHING OF SUBSTRATES

Номер: US20160013063A1
Автор: RANJAN ALOK, Ventzek Peter L. G., Wang Mingmei
Принадлежит:

This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV. 1. A method , comprising:receiving a microelectronic substrate into a plasma process chamber;receiving a gas mixture in the plasma process chamber, the gas mixture comprising a dilution gas and a reactant gas;achieving a process pressure of greater than or equal to 40 mTorr in the plasma process chamber;applying microwave power to the gas mixture;applying an alternating bias power to the gas mixture that alternates on and off in an asymmetrical manner over a period of time, the bias power comprising a magnitude of no more than 150 W at a driving frequency; andvarying concentration of the gas mixture over the period of time, the variation ranging between 0% and 100% by volume of the reactant gas.2. The method of claim 1 , wherein the microwave power generates a plasma potential proximate to the substrate of less than or equal to 20 eV when the biasing is off.3. The method of claim 2 , wherein the dilution gas comprises one or more of the following: argon claim 2 , helium claim 2 , or nitrogen claim 2 , and the reactant gas comprises an oxygen-containing gas or a halogen-containing gas.4. The method of claim 1 , wherein the driving frequency comprises less a frequency less than 60 MhZ.5. The method of claim 1 , wherein the reactant gas concentration varies ...

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Номер записи: 29
15-01-2015 дата публикации

Microwave plasma processing apparatus and microwave supplying method

Номер: US20150015139A1
Автор: Kazushi Kaneko, Satoru Kawakami, Toshihiko Iwao
Принадлежит: Tokyo Electron Ltd

A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

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Номер записи: 30
22-01-2015 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20150021473A1
Автор: Vandermeulen Peter F.
Принадлежит:

An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge. 1. An apparatus for separating ions having different mass or charge , comprising:a waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of openings;one or more pipes having an outlet end positioned at each of the plurality of openings for transporting material from a material source to the plurality of openings;a plasma chamber in communication with the waveguide tube through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide tube and material from the one or more pipes, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma ...

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Номер записи: 31
10-02-2022 дата публикации

SYSTEMS AND METHODS FOR PROCESSING GASES

Номер: US20220041439A1
Автор: "OReilly Matthew Elijah", Ashcraft James Nathan, Hummelt Jason Samuel, Leeds Mathew, Santana Alexander Olson, Soane David S., Soderholm Mark Ellis
Принадлежит:

The invention includes a gas processing system for transforming a hydrocarbon-containing inflow gas into outflow gas products, where the system includes a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem, with the gas delivery subsystem in fluid communication with the plasma reaction chamber, so that the gas delivery subsystem directs the hydrocarbon-containing inflow gas into the plasma reaction chamber, and the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, which plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, which comprise acetylene and hydrogen. The invention also includes methods for the use of the gas processing system. 1. A method for processing a methane-containing inflow gas to produce outflow gas products , comprising directing the methane-containing inflow gas into a system comprising: a gas delivery subsystem , a plasma reaction chamber , a microwave subsystem , a vacuum subsystem , and an effluent separation and disposal subsystem; wherein the gas injector comprises an injector body comprising two or more separate gas feeds, a first gas feed conveying the methane-containing inflow gas into the plasma reaction chamber through a first set of one or more nozzles, and a second gas feed conveying a hydrogen-rich reactant gas into the plasma reaction chamber through a second set of one or more nozzles,', 'wherein the delivery conduit is in fluid communication with the gas injector, wherein the delivery conduit comprises a feed gas conveying circuit that delivers the methane-containing inflow gas into the gas injector, and', 'wherein the delivery conduit further comprises an auxiliary gas conveying circuit that delivers the hydrogen-rich reactant gas into the gas injector, each of the methane-containing inflow gas and the ...

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Номер записи: 32
26-01-2017 дата публикации

Plasma processing apparatus

Номер: US20170025255A1
Автор: Kenetsu Yokogawa, Takumi Tandou
Принадлежит: Hitachi High Technologies Corp

A sample stage includes a metallic electrode block to which high-frequency power is supplied from a high-frequency power supply, a dielectric heat generation layer which is disposed on a top surface of the electrode block and in which a film-like heater receiving power and generating heat is disposed, a conductor layer which is disposed to cover the heat generation layer, a ring-like conductive layer which is disposed to surround the heat generation layer at an outer circumferential side of the heat generation layer and contacts the conductor layer and the electrode block, and an electrostatic adsorption layer which is disposed to cover the conductor layer and electrostatically adsorbs a sample. The conductor layer and the ring-like conductive layer have dimensions more than a skin depth of a current of the high-frequency power and the electrode block is maintained at a predetermined potential during processing of the sample.

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Номер записи: 33
28-01-2016 дата публикации

Method and apparatus for esc charge control for wafer clamping

Номер: US20160027620A1
Автор: Alok Ranjan, Jason MARION, Sergey A. Voronin, Sonam SHERPA, Takashi Enomoto, Yoshio Ishikawa
Принадлежит: Tokyo Electron Ltd

A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.

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Номер записи: 34
25-01-2018 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20180025923A1
Автор: Matsumoto Naoki
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator. 1performing a heating processing by the heating member before the plasma processing of irradiating the microwaves for plasma excitation to the processing space is performed;performing the plasma processing after the heating processing is initiated; andstopping the heating processing by the heating member after the plasma processing is initiated.. A method of performing a plasma processing by using a plasma processing apparatus, the plasma processing apparatus including a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots and provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator; and a heating member provided within the slot plate, the method comprising: This application is a divisional of U.S. patent application Ser. No. 14/394,112, filed on Oct. 13, 2014, which is a National Stage Application of PCT/JP2013/063833, filed on May 17, 2013, and also claims priority from Japanese Patent Application No. 2012-114934, filed on May 18, 2012, all of which are incorporated herein by reference.Various aspects and exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma ...

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Номер записи: 35
29-01-2015 дата публикации

Methods and systems for plasma deposition and treatment

Номер: US20150028972A1
Автор: Peter F. Vandermeulen
Принадлежит: Individual

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

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Номер записи: 36
02-02-2017 дата публикации

METHOD AND DEVICE FOR GENERATING A PLASMA EXCITED BY A MICROWAVE ENERGY IN THE ELECTRON CYCLOTRON RESONANCE (ECR) DOMAIN, IN ORDER TO CARRY OUT A SURFACE TREATMENT OR PRODUCE A COATING AROUND A FILIFORM ELEMENT

Номер: US20170032939A1
Автор: BLANDENET Olivier, Choquet Patrick, Duday David, LAGARDE Thierry Leon
Принадлежит:

According to the process, the filiform component is continuously linearly moved through magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, and the microwave energy is introduced between at least two magnetic dipoles. 1- A process to generate a plasma excited by microwave energy in a field of electron cyclotron resonance (ECR) , to execute a surface treatment or coating around a filiform component , comprising:continuously linearly moving the filiform component through at least two magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, andintroducing the microwave energy between the at least two magnetic dipoles.2- The process according to claim 1 , further including: executing a surface treatment comprising a cleaning claim 1 , a pickling claim 1 , a functionalisation claim 1 , or a grafting.3- The process according to claim 1 , further including: coating by PECVD (plasma-enhanced chemical vapour deposition).4- A device to generate a plasma around a continuously linearly driven filiform component and to produce microwave energy in a field of cyclotron resonance claim 1 , comprising: at least one module composed of two magnetic dipoles arranged opposite each other and mounted around a tube constituting a treatment chamber and through which the filiform component to be treated is linearly moved claim 1 , and a microwave applicator being mounted between the two dipoles.5- The device according to claim 4 , wherein the magnetic dipoles comprise annular magnets.6- The device according to claim 5 , wherein the annular magnets comprise permanent magnets.7- The device according to claim 5 , wherein the annular magnets comprise electromagnet coils.8- The device according to claim 4 , wherein the microwave applicator is arranged perpendicularly to a central axis of the tube.9- The device according to claim 4 , wherein the tube constitutes a Tee having a median branch and two other ...

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Номер записи: 37
04-02-2021 дата публикации

PLASMA PROCESSING APPARATUS AND CONTROL METHOD

Номер: US20210035788A1
Автор: IKEDA Taro, KAMATA Eiki, SATO Mikio
Принадлежит:

A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma. 1. A plasma processing apparatus comprising:a processing chamber having a ceiling plate with at least one opening;at least one conductive annular member respectively disposed at said at least one opening while being insulated from the ceiling plate;at least one microwave radiating mechanism respectively disposed on the ceiling plate to be coaxial with a center of each of said at least one conductive annular member and configured to radiate microwaves into the processing chamber; anda plasma detector connected to each of said at least one conductive annular member and configured to detect a state of generated plasma.2. The plasma processing apparatus of claim 1 , wherein the plasma detector detects the state of the plasma by applying an AC voltage to each of said at least one conductive annular member and measuring a current flowing through each of said at least one conductive annular member.3. The plasma processing apparatus of claim 1 , wherein each of said at least one conductive annular member is embedded in an insulating member supported by the ceiling plate.4. The plasma processing apparatus of claim 3 , wherein each of said at least one conductive annular member has a film shape or a mesh shape.5. The plasma processing apparatus of claim 1 , wherein each of said at least one conductive annular member is supported by the ceiling plate.6. The ...

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Номер записи: 38
11-02-2016 дата публикации

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20160042944A1
Автор: Suguro Kyoichi
Принадлежит:

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a wafer, and a supporter configured to support the wafer in the container. The apparatus further includes a plasma generator including a plasma tube, and configured to form a film on the wafer by generating plasma in the container with the plasma tube during a first period and during a second period after the first period. The apparatus further includes a controller configured to set a distance between the plasma tube and the wafer to be a first distance during the first period, and set the distance to be a second distance longer than the first distance during the second period. 1. A semiconductor manufacturing apparatus comprising:a container configured to contain a wafer;a supporter configured to support the wafer in the container;a plasma generator including a plasma tube, and configured to form a film on the wafer by generating plasma in the container with the plasma tube during a first period and during a second period after the first period; anda controller configured to set a distance between the plasma tube and the wafer to be a first distance during the first period, and set the distance to be a second distance longer than the first distance during the second period.2. The apparatus of claim 1 , wherein the plasma generator generates the plasma by generating a microwave in the plasma tube.3. The apparatus of claim 2 , wherein a frequency of the microwave is 2.0 to 30.0 GHz.4. The apparatus of claim 1 , further comprising a heater provided on an opposite side to the plasma generator in relation to the supporter claim 1 , and configured to heat the wafer5. The apparatus of claim 4 , wherein the heater heats the wafer by irradiating the wafer with a microwave.6. The apparatus of claim 1 , wherein the controller controls the distance by moving a position of the plasma tube.7. The apparatus of claim 1 , wherein the controller controls the distance by driving the ...

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Номер записи: 39
09-02-2017 дата публикации

RADIO FREQUENCY PLASMA METHOD FOR UNIFORM SURFACE PROCESSING OF RF CAVITIES AND OTHER THREE-DIMENSIONAL STRUCTURES

Номер: US20170040144A1
Автор: Phillips H. Lawrence, Popovic Svetozar, UPADHYAY JANARDAN, VALENTE-FELICIANO ANNE-MARIE, VUSKOVIC LEPOSAVA
Принадлежит: Old Dominion University

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness. 1. A method for efficient plasma etching the inner wall of a chamber cavity , wherein the inner wall comprises one selected from the group consisting of a metal , a semiconductor , a dielectric material , and combinations thereof , the method comprising:positioning an inner electrode within the chamber cavity;evacuating the chamber cavity;wherein the chamber cavity has an internal surface area of from 50 to 10000 cm2;adding 60 to 100 weight percent of a first inert gas selected from the group consisting of Argon (Ar), Krypton (Kr), Helium (He), Xenon (Xe), and Nitrogen (N2), and combinations thereof to the chamber cavity at a pressure of from 0.01 to 1 Torr;regulating the pressure in the chamber; a radiofrequency (RF) discharge at a frequency of from 1 to 150 MHz,', 'a microwave discharge at power density of 0.1 to 3 W/cm 3 and frequency of 1.3 to 3 GHz,', 'a pulsed d.c. high voltage (HV) discharge at average power density of 0.1 to 3 W/cm 3, and combinations thereof;, 'generating a plasma sheath along the inner wall of the chamber cavity by applying one selected from the group consisting ofadjusting a positive D.C. bias on the inner electrode to establish the effective plasma sheath voltage of from 10 to 500 V;adding 1 to 15 ...

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Номер записи: 40
09-02-2017 дата публикации

A microwave plasma reactor for manufacturing synthetic diamond material

Номер: US20170040145A1
Автор: Ben Llewlyn Green, Geoffrey Alan Scarsbrook, Ian Friel, John Robert Brandon, Michael Andrew Cooper
Принадлежит: Element Six Technologies Ltd

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

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Номер записи: 41
15-02-2018 дата публикации

PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD USING SAME

Номер: US20180047595A1
Автор: HAMASAKI Ryoji, Kofuji Naoyuki, MORI Masahito, NISHIDA Toshiaki
Принадлежит:

Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. 1. A plasma processing apparatus comprising:a processing chamber configured to perform plasma processing for a sample;a radio frequency power source configured to supply radio frequency power for generating plasma in the processing chamber;a sample stage where the sample is placed;a shielding plate arranged over the sample stage to shield incidence of ions generated from the plasma into the sample stage; anda controller configured to selectively perform one of controls for generating plasma over the shielding plate and the other control for generating plasma under the shielding plate.2. The plasma processing apparatus according to claim 1 , further comprising a magnetic field generating means configured to generate a magnetic field inside the processing chamber claim 1 ,wherein the radio frequency power source supplies microwave radio frequency power to the inside of the processing chamber.3. The plasma processing apparatus according to claim 1 , further comprising:a first induction coil for generating plasma over the shielding plate by an induced magnetic field; anda second induction coil for generating plasma under the shielding plate by an induced magnetic field.4. The plasma processing apparatus according to claim 2 , wherein the shielding plate is formed of a dielectric material.5. The plasma processing apparatus according to claim 3 , wherein the shielding plate is formed of a conductor.6. A plasma processing apparatus comprising:a processing chamber configured to perform plasma processing for a sample;a radio frequency power source configured to supply radio frequency power for generating plasma in the processing chamber;a sample stage where the sample is placed;a shielding plate arranged over the sample stage to shield incidence of ...

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Номер записи: 42
25-02-2021 дата публикации

MICROWAVE REACTOR SYSTEM ENCLOSING A SELF-IGNITING PLASMA

Номер: US20210053829A1
Автор: Anzelmo Bryce H., COOK Daniel, Kalluri Ranjeeth, Stowell Michael W., Tanner David
Принадлежит: Lyten, Inc.

This disclosure provides a reactor system that includes a microwave energy source that generates a microwave energy, a field-enhancing waveguide (FEWG) coupled to the microwave source. The FEWG includes a field-enhancing zone having a cross-sectional area that decreases along a length of the FEWG. The field-enhancing zone includes a supply gas inlet that receives a supply gas, a reaction zone that generates a plasma in response to excitation of the supply gas by the microwave energy, a process inlet that injects a raw material into the reaction zone, and a constricted region that retains a portion of the plasma and combines the plasma and the raw material in response to the microwave energy within the reaction zone. An expansion chamber is in fluid communication with the constricted region facilitates expansion of the plasma. An outlet outputs a plurality of carbon-inclusive particles derived from the expanded plasma and the raw material. 1. A reactor system comprising:a microwave energy source configured to generate a microwave energy; a supply gas inlet configured to receive a supply gas;', 'a reaction zone configured to generate a plasma in response to excitation of the supply gas by the microwave energy;', 'a process inlet configured to inject a raw material into the reaction zone; and', 'a constricted region configured to retain at least some of the generated plasma within the reaction zone, the constricted region further configured to combine the plasma and the raw material in response to microwave energy within the constricted region;, 'a field-enhancing waveguide (FEWG) coupled to the microwave energy source, the FEWG including a field-enhancing zone having a cross-sectional area that decreases along a length of the FEWG, the field-enhancing zone comprisingan expansion chamber in fluid communication with the constricted region and configured to expand the plasma; andan outlet configured to output a plurality of carbon-inclusive particles derived from the ...

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Номер записи: 43
23-02-2017 дата публикации

Method for Forming Regular Polymer Thin Films Using Atmospheric Plasma Deposition

Номер: US20170050214A1
Автор: Boscher Nicolas, Choquet Patrick, Duday David, HILT Florian
Принадлежит: Luxembourg Institute of Science and Technology (LIST)

The invention provides a method for forming regular polymer thin films on a substrate using atmospheric plasma discharges. In particular, the method allows for the deposition of functional polymer thin films which require a high regularity and a linear polymer structure. 1. A method for forming a polymer thin film on a substrate , comprising the following subsequent steps:providing a mixture comprising at least one polymer forming material; andapplying a sequence of atmospheric plasma pulses to the mixture in order to form a polymer thin film on a surface portion of a substrate, which is contacted by said mixture;{'sub': ON', 'OFF, 'wherein each plasma pulse presents a duration t, comprised between one nanosecond and one microsecond, during which the plasma is discharged, and a duration t, comprised between one microsecond and one second, during which the plasma is not discharged; and'}{'sub': ON', 'ON', 'OFF, 'wherein the duty-cycle of a plasma pulse t/(t+t) is lower than 1%.'}2. The method according to claim 1 , wherein the duty-cycle is lower than 0.1%.3. The method according to claim 1 , wherein each plasma discharge is generated by a voltage pulse claim 1 , which rises to the plasma discharge breakdown voltage in one nanosecond to one microsecond.4. The method according to claim 3 , wherein the voltage rise rate of the voltage pulse is of at least 10 V·ns.5. The method according to claim 3 , wherein the voltage pulses are repeated at a frequency which is lower than one of the following:one kHz; andone hundred Hz.6. The method according to claim 3 , wherein the voltage pulse is a square wave voltage pulse.7. The method according to claim 6 , wherein the square wave is a bipolar square wave.8. The method according to claim 6 , wherein the square wave is a positive or negative unipolar square wave.9. The method according to claim 3 , wherein the duration of a voltage pulse is comprised between one nanosecond and one second.10. The method according to claim 1 , ...

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Номер записи: 44
25-02-2021 дата публикации

Large area microwave plasma cvd apparatus and corresponding method for providing such deposition

Номер: US20210057190A1
Автор: Justas ZALIECKAS
Принадлежит: VESTLANDETS INNOVASJONSSELSKAP AS

A large area microwave plasma chemical vapour deposition, LA MPCVD reactor apparatus and method for large area microwave chemical vapour deposition, comprising a reactor chamber adapted to provide a plasma region in an interior of the reactor chamber by electromagnetic energy at a first frequency, and a CRLH waveguide section adapted to operate with an infinite wavelength at the first frequency and having in a wall a coupler means arranged to couple electromagnetic energy from an interior of the CRLH waveguide section to the interior of the reactor chamber.

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Номер записи: 45
22-02-2018 дата публикации

MODULAR MICROWAVE PLASMA SOURCE

Номер: US20180053634A1
Автор: Chua Thai Cheng, KRAUS Philip Allan
Принадлежит:

Embodiments include a modular microwave source. In an embodiment, the modular microwave source comprises a voltage control circuit, a voltage controlled oscillator, where an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator. The modular microwave source may also include a solid state microwave amplification module coupled to the voltage controlled oscillator. In an embodiment, the solid state microwave amplification module amplifies an output from the voltage controlled oscillator. The modular microwave source may also include an applicator coupled to the solid state microwave amplification module, where the applicator is a dielectric resonator. 1. A modular microwave source , comprising:a voltage control circuit;a voltage controlled oscillator, wherein an output voltage from the voltage control circuit drives oscillation in the voltage controlled oscillator;a solid state microwave amplification module coupled to the voltage controlled oscillator, wherein the solid state microwave amplification module amplifies an output from the voltage controlled oscillator; andan applicator coupled to the solid state microwave amplification module, wherein the applicator is a dielectric resonator.2. The modular microwave source of claim 1 , wherein the solid state microwave amplification module further comprises a pre-amplifier claim 1 , a main power amplifier claim 1 , and a power supply electrically coupled to the pre-amplifier claim 1 , and the main power amplifier.3. The modular microwave source of claim 2 , wherein the microwave amplification module further comprises a phase-shifter.4. The modular microwave source of claim 2 , wherein the microwave amplification module further comprises a circulator along a transmission path between the main power amplifier and the applicator claim 2 , wherein the circulator transmits reflected power from the applicator to a dummy load; and a feedback line between the dummy load and the ...

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Номер записи: 46
05-03-2015 дата публикации

Microwave plasma reactors and substrates for synthetic diamond manufacture

Номер: US20150061191A1
Автор: Alexander Lamb CULLEN, Carlton Nigel Dodge, Charles Simon James Pickles, Christopher John Howard Wort, Geoffrey Alan Scarsbrook, John Robert Brandon, Joseph Michael Dodson, Paul Nicolas Inglis, Steven Edward Coe, Timothy Peter Mollart
Принадлежит: Element Six Ltd

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

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Номер записи: 47
21-02-2019 дата публикации

Plasma processing apparatus

Номер: US20190057843A1
Автор: Fukata Kensuke, Funazaki Kazunori, Itadani Koji, KANEKO Kazushi, Uchida Kouki
Принадлежит: TOKYO ELECTRON LIMITED

An apparatus includes a chamber main body, a microwave output device that generates a microwave having a bandwidth, a wave guide tube that is connected between the microwave output device and the chamber main body, and tuner that is provided in the wave guide tube. The microwave output device generates a microwave of which power is pulse-modulated to have a high level and a low level. The tuner includes a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube, a tuner wave detection unit that detects a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and a tuner control unit that adjusts a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit. 1. A plasma processing apparatus comprising:a chamber main body;a microwave output device configured to generate a microwave having a center frequency and a bandwidth respectively corresponding to a setting frequency and a setting bandwidth instructed by a controller, the microwave having power pulse-modulated such that a pulse frequency, a duty ratio, a high level and a low level respectively corresponding to a pulse frequency, a setting duty ratio, high level setting power and low level setting power instructed by the controller;a wave guide tube connected between the microwave output device and the chamber main body; anda tuner that provided in the wave guide tube, a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube,', 'a tuner wave detection unit configured to detect a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and', 'a tuner control unit configured to adjust a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit., ...

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Номер записи: 48
21-02-2019 дата публикации

PLASMA PROCESSING APPARATUS AND SAMPLE STAGE THEREOF

Номер: US20190057846A1
Автор: Kusumoto Hironori, Nagai Koji, NAKAMOTO Kazunori, Ohmoto Yutaka
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted. 1. A plasma processing method comprising the steps of:mounting a wafer to be processed on an upper surface of a sample stage which is disposed in a processing chamber inside a vacuum vessel;generating a plasma inside the processing chamber; andadjusting a temperature of the wafer in a predetermined permissible range using at least one of heater units which is disposed inside a dielectric film constituting the upper surface of the sample stage and configured to generate heat,wherein the at least one of heater units is comprised of a plurality of arcuate portions which are arranged in a ring-shape so as to surround a central region of the dielectric film and connected in series inside the dielectric film, and the at least one of heater units is supplied DC power from a DC power supply, andthe step of adjusting the temperature of the wafer includes a step of adjusting amounts of DC current in each of the plurality of arcuate portion of the at least one of heater units supplied from the DC power supply.2. The plasma processing method according to claim 1 , whereinthe step of adjusting the temperature of the wafer includes a step of adjusting an amount of DC current in each of the plurality of arcuate portions of the at least one of heater units by adjusting an amount of DC current supplied to each of a plurality of circuit ...

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Номер записи: 49
03-03-2016 дата публикации

Plasma processing apparatus

Номер: US20160064189A1
Автор: Akitaka Makino, Takumi Tandou
Принадлежит: Hitachi High Technologies Corp

A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding/evacuation conduit including a feeding-path that communicates with the port and through which gas fed to the gap flows, an evacuation-path that communicates with the opening and through which gas fed to the gap is discharged, and a connection-path through which the feeding-path and the evacuation-path communicate. With communication between the feeding-path and the evacuation-path via the connection-path interrupted, gas from the feeding-path is fed to the gap and into the through-hole via the gap.

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Номер записи: 50
20-02-2020 дата публикации

PLASMA GENERATION SYSTEM

Номер: US20200060017A1
Автор: IKEDO Toshiyuki, JINDO Takahiro
Принадлежит: FUJI CORPORATION

A plasma generation system capable of more accurately measuring the actual temperature of a plasma gas applied to a target object. The plasma generation system includes: an emitting head configured to generate plasma gas by supplying power to electrodes provided in a reaction chamber to generate a plasma gas by converting a processing gas into plasma, and apply the generated plasma gas to a target object; and a temperature sensor configured to detect a temperature of the plasma gas and output a detection signal corresponding to the detected temperature. The temperature sensor is arranged at a position separated from an emission port of the emitting head from which the plasma gas is emitted. The emitting head is configured to be movable between the target object the temperature sensor. 16-. (canceled)7. A plasma generation system comprising:an emitting head configured to generate plasma gas by supplying power to electrodes provided in a reaction chamber to generate a plasma gas by converting a processing gas into plasma, and apply the generated plasma gas to a target object; anda temperature sensor configured to detect a temperature of the plasma gas and output a detection signal corresponding to the detected temperature,whereinthe temperature sensor is arranged at a position separated from an emission port of the emitting head from which the plasma gas is emitted and the plasma gas is emitted from the emission port to the temperature sensor, andthe emitting head is configured to be movable between the target object the temperature sensor.8. The plasma generation system according to claim 7 , further comprising:a moving device configured to move the emitting head; anda control device configured to receive the detection signal outputted from the temperature sensor,whereinthe control device is configured to performdetection processing of controlling the moving device to move the emitting head to a position of the temperature sensor, and emitting the plasma gas to the ...

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Номер записи: 51
17-03-2022 дата публикации

DC BULK CONDUCTIVE CERAMIC WITH LOW RF AND MICROWAVE LOSS

Номер: US20220081366A1
Автор: Kanareykin Alexei, Nenasheva Elizaveta Arkadievna
Принадлежит:

A DC conductive, low RF/microwave loss titanium oxide ceramic provides, at room temperature, a bulk DC resistivity of less than 1×10ohm-meters and an RF loss tangent of less than 2×10at 7.5 GHz and less than 2×10at 650 MHz. The resistivity is reduced by oxygen vacancies and associated Ti and/or Ti centers created by sintering in an atmosphere containing only between 0.01% and 0.1% oxygen. The reduced resistivity prevents DC charge buildup, while the low loss tangent provides good RF/microwave transparency and low losses. The ceramic is suitable for forming RF windows, electron gun cathode insulators, dielectrics, and other components. An exemplary MgTiO—MgTiOembodiment includes mixing, grinding, pre-sintering in air, and pressing 99.95% pure MgO and TiOpowders, re-sintering in air at 1400° C.-1500° C. to reduce porosity, and sintering at 1350° C.-1450° C. for 4 hours in an 0.05% oxygen and 99.05% nitrogen atmosphere. 1. A method of manufacturing a DC conductive low RF/microwave loss ceramic suitable for implementation in a charged particle beam apparatus , the method comprising:a) preparing a mixture of precursor ceramic powders that includes a titanium-oxide based ceramic powder;b) pressing the mixed powders into a desired shape; andc) sintering the pressed powders in an atmosphere having an oxygen concentration that is reduced in comparison to air.2. The method of claim 1 , further comprising between steps a) and b) a further step of pre-sintering the mixture of precursor ceramic powders in air.3. The method of claim 2 , wherein the pre-sintering is at a temperature that is between 1150° C. and 1250° C.4. The method of claim 1 , further comprising between steps b) and c) a further step of re-sintering the pressed powders in an air atmosphere.5. The method of claim 4 , wherein the re-sintering is at a temperature of between 1400° C. and 1500° C.6. The method of claim 4 , wherein the re-sintering is continued until the pressed powders exhibit substantially no water ...

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Номер записи: 52
12-03-2015 дата публикации

SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150069674A1
Автор: Goto Tetsuya, INOKUCHI Atsutoshi, Ishibashi Kiyotaka, Matsuoka Takaaki, NOZAWA Toshihisa, Ohmi Tadahiro, OKESAKU Masahiro
Принадлежит:

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas. 1. A method of manufacturing a shower plate which is to be disposed in a plasma processing and to discharge a plasma excitation gas so as to generate plasma in the plasma processing apparatus , the method comprising:providing a first ceramic member having a plurality of vertical holes, wherein the plurality of vertical holes are to be release paths for the plasma excitation gas;fitting each of a plurality of second ceramic members into each of the vertical holes, wherein each of the second ceramic members has a plurality of gas release holes; andsintering the first ceramic member and the second ceramic members fitted into the vertical holes of the first ceramic member.2. The method of claim 1 , wherein the first ceramic member is a green body formed by molding material powder of a shower plate and by processing the vertical holes claim 1 , a debinded body of the green body claim 1 , or a pre-sintered body of the green body claim 1 , andthe each of the second ceramic members is:a powder molding body processed in a predetermined shape by molding material powder of a shower plate, a debinded body of the powder molding body, a pre-sintered body of the powder molding body or a sintered body of the powder molding body, and/ora powder molding body processed in a predetermined shape by molding material powder of a porous gas-communicating body, a debinded body of the powder molding body, a pre-sintered body of the ...

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Номер записи: 53
10-03-2016 дата публикации

Apparatus and method for continuous synthesis of carbon film or inorganic material film

Номер: US20160068397A1
Автор: Chen Yu Min, Su Ching-Yuan
Принадлежит:

An apparatus for continuous synthesis of carbon film or inorganic material film includes an external chamber having a gas intake gate and a gas exhaust gate; a substrate transporting apparatus disposed inside the external chamber and including a rolling-out member, a plurality of rollers, a rolling-in member, and a moving path; a substrate with metal conveyed along the moving path; a temperature controller correspondingly disposed above or under the substrate transporting apparatus, wherein when the substrate with metal passes through the temperature controller, the temperature controller heats the substrate with metal; a vacuum system connected to the external chamber and inhaling a gas through the gas intake gate and exhausting the gas through the gas exhaust gate; and a gas source controller connected to the external chamber and controlling a supply of the gas, wherein the gas includes a carbon source or an inorganic material source. 1. An apparatus for continuous synthesis of carbon film or inorganic material film , comprising:an external chamber including a gas intake gate and a gas exhaust gate;a substrate transporting apparatus installed in the external chamber, comprising a rolling-out member, a plurality of rollers, a rolling-in member, and a moving path; a substrate with metal being conveyed along the moving path;a temperature controller being correspondingly disposed above or under the substrate transporting apparatus, wherein when the substrate with metal passes through the temperature controller, the temperature controller heats the substrate with metal;a vacuum system connected to the external chamber, the vacuum system inhaling a gas through the gas intake gate and exhausting the gas through the gas exhaust gate;a gas source controller connected to the external chamber and controlling a supply of the gas, wherein the gas includes a carbon source or an inorganic material source; anda plasma system providing energy for pyrolyzing the gas.2. The ...

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Номер записи: 54
27-02-2020 дата публикации

SYSTEMS AND METHODS FOR PROCESSING GASES

Номер: US20200063040A1
Автор: "OReilly Matthew Elijah", Ashcraft James Nathan, Hummelt Jason Samuel, Leeds Mathew, Santana Alexander Olson, Soane David S., Soderholm Mark Ellis
Принадлежит:

The invention includes a gas processing system for transforming a hydrocarbon-containing inflow gas into outflow gas products, where the system includes a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem, with the gas delivery subsystem in fluid communication with the plasma reaction chamber, so that the gas delivery subsystem directs the hydrocarbon-containing inflow gas into the plasma reaction chamber, and the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, which plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, which comprise acetylene and hydrogen. The invention also includes methods for the use of the gas processing system. 1. A system for transforming a hydrocarbon-containing inflow gas into outflow gas products , comprising:a gas delivery subsystem, a plasma reaction chamber, and a microwave subsystem;wherein the gas delivery subsystem is in fluid communication with the plasma reaction chamber and directs the hydrocarbon-containing inflow gas into the plasma reaction chamber;wherein the microwave subsystem directs microwave energy into the plasma reaction chamber to energize the hydrocarbon-containing inflow gas, thereby forming a plasma in the plasma reaction chamber, and wherein the plasma effects the transformation of a hydrocarbon in the hydrocarbon-containing inflow gas into the outflow gas products, wherein the outflow gas products comprise acetylene and hydrogen.2. The system of claim 1 , wherein the hydrocarbon-containing inflow gas is derived from a mixed gas source.3. The system of claim 2 , wherein the mixed gas source is natural gas or a biogas.4. (canceled)5. The system of claim 1 , wherein the hydrocarbon-containing inflow gas comprises a gas selected from the group consisting of methane claim 1 , ethane claim ...

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Номер записи: 55
10-03-2016 дата публикации

Method for Increasing Adhesion of Copper to Polymeric Surfaces

Номер: US20160071703A1
Автор: Chandrasekaran Ramya, Golovato Stephen N., Seryogin Georgiy
Принадлежит:

Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties. 1. A system comprising: a first tray chuck;', 'an electrode adjacent to the first tray chuck, the electrode comprising one or more of the following: parallel plate electrode, a loop antenna, a helical antenna, or a magnetic coil; and', 'a power source in electrical communication with the electrode, the power comprising a radio frequency (RF) source or a microwave source;, 'a surface energy chamber comprising a second tray chuck; and', 'a metal sputtering target adjacent to the sputter tray chuck;, 'a metal deposition chamber comprisingan encapsulated device tray handling system to move a tray of encapsulated electronic devices between the surface energy chamber and the metal deposition chamber.2. The system of claim 1 , wherein the surface energy chamber uses the electrode and the power source to alter a surface energy or a surface state of the encapsulated electronic devices.3. The system of claim 1 , wherein the system comprises a gas delivery system for a nitrogen gas or a noble gas.4. The system of claim 3 , wherein the surface energy chamber can generate a nitrogen-containing plasma.5. The system of claim 1 , wherein the surface energy chamber comprises a plasma etch chamber.6. The system of claim 1 , wherein the encapsulated devices comprise:a protective cover that isolates the device from ambient conditions; andelectrical leads that can ...

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Номер записи: 56
05-06-2014 дата публикации

Controlling doping of synthetic diamond material

Номер: US20140150713A1
Автор: Christopher John Howard Wort, Daniel James Twitchen, Geoffrey Alan Scarsbrook, John Robert Brandon, Jonathan James Wilman, Matthew Lee Markham, Steven Edward Coe
Принадлежит: Element Six Ltd

A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm 3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.

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Номер записи: 57
11-03-2021 дата публикации

PLASMA PROCESSING APPARATUS AND TEMPERATURE CONTROL METHOD

Номер: US20210074518A1
Автор: IKEDA Taro, Kawakami Satoru
Принадлежит:

A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate; a plurality of microwave radiation mechanisms, a stage arranged in the processing container to accommodate the substrate thereon and including a lower heating source; and an upper heating source provided on the upper portion of the processing container and arranged at a position that faces the stage. 2. The plasma processing apparatus according to claim 1 , wherein the upper heating source is a heating lamp.3. The plasma processing apparatus according to claim 2 , further comprising:a gas inlet provided in the processing container and connected to a gas source for film formation.4. The plasma processing apparatus according to claim 3 , further comprising:a controller configured to control an overall operation of the plasma processing apparatus including the lower heating source and the upper heating source such thatduring a plasma processing, both the lower heating source and the upper heating source perform heating, and during a cleaning, the lower heating source heats with an output of A % of the plasma processing, and the upper heating source heats with an output of B % (B Подробнее

Номер записи: 58
11-03-2021 дата публикации

Methods and apparatus for dynamical control of radial uniformity with two-story microwave cavities

Номер: US20210074539A1
Автор: Denis Ivanov, Dmitry Lubomirsky, Hideo Sugai, Lance Scudder, Satoru Kobayashi
Принадлежит: Applied Materials Inc

Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.

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Номер записи: 59
15-03-2018 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20180076009A1
Автор: Vandermeulen Peter F.
Принадлежит:

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of primary slots therein located on one side of the waveguide conduit, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of primary slots, said waveguide conduit further comprising a plurality of secondary slots, each of said secondary slots being aligned with and on an opposite side of said waveguide conduit from a different one of said plurality of primary slots, said waveguide conduit further comprising a primary plunger adjustably mounted in the waveguide conduit to create a standing microwave in the waveguide conduit, said standing microwaves having maxima in microwave power at a location of said primary and secondary slots;a set of secondary plungers fitted in said secondary slots, wherein each secondary plunger includes an opening extending therethrough, and wherein each secondary plunger in a given secondary slot is movable in a direction toward or away from a primary slot aligned with said given secondary slot to direct radiation emitted through said plurality of primary slots; andone or more pipes extending through the ...

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Номер записи: 60
24-03-2022 дата публикации

CYLINDRICAL CAVITY WITH IMPEDANCE SHIFTING BY IRISES IN A POWER-SUPPLYING WAVEGUIDE

Номер: US20220093364A1
Автор: Kobayashi Satoru, LUBOMIRSKY DMITRY, Park Soonam, Sugai Hideo, Tran Toan
Принадлежит:

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate. 1. A plasma reactor comprising:a workpiece processing chamber including a workpiece support to hold a workpiece in a first plane;a cylindrical microwave cavity that overlies the workpiece processing chamber, the cylindrical microwave cavity including a floor that is parallel to the first plane and separates the cylindrical microwave cavity from the workpiece processing chamber and includes a plurality of apertures for microwave energy to pass into the workpiece processing chamber, a ceiling, a cylindrical sidewall, and exactly two microwave input ports in the cylindrical sidewall of said cylindrical microwave cavity, the two microwave input ports including a first input port and a second input port spaced apart by an oblique azimuthal angle;a microwave source having a microwave frequency and having a pair of microwave source outputs; and{'claim-text': ['a microwave input end coupled to a respective one of the microwave source outputs,', 'a microwave output end coupled to a respective one of the first and second input ports,', 'a coupling aperture plate at the output end, the coupling aperture plate having a rectangular coupling aperture therethrough, and', 'an iris plate between the coupling aperture plate and the microwave input end, the iris plate having a ...

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Номер записи: 61
07-03-2019 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20190075644A1
Автор: IKEDA Taro, KOMATSU Tomohito, NAKAGOMI Jun
Принадлежит:

A plasma processing apparatus, for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber, includes a microwave introducing surface and a plurality of gas injection holes. Microwaves from a microwave introducing unit are introduced through microwave introducing surface and surface waves of the microwaves propagate on the microwave introducing surface. The gas injection holes are arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface. 1. A plasma processing apparatus for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber , the apparatus comprising:a microwave introducing surface through which microwaves from a microwave introducing unit are introduced and on which surface waves of the microwaves propagate; anda plurality of gas injection holes arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface.2. The plasma processing apparatus of claim 1 , wherein the gas injection holes surround the microwave introducing unit.3. The plasma processing apparatus of claim 1 , wherein the predetermined range from the boundary line is within 2 mm from the boundary line.4. The plasma processing apparatus of claim 1 , wherein the microwave introducing surface is a surface of a ceiling wall of the processing chamber;the surface of the processing chamber that is adjacent to the microwave introducing surface is a surface of a sidewall of the processing chamber; andthe gas injection holes penetrate through the ceiling wall or the sidewall within 2 mm from the boundary line.5. The plasma processing apparatus of claim 4 , wherein the gas ...

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Номер записи: 62
05-03-2020 дата публикации

PLASMA DEPOSITION METHOD, PLASMA DEPOSITION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20200075324A1
Автор: An Sung-Joo, JEONG GEUN-O, Jun Kee-Young, Kim Chang-Hyun, Lee Chang-Seok, Lee Jang-hee, SHIN Hyeon-jin, SHIN Keun-Wook, SONG Hyun-jae, YAMAMOTO Kaoru
Принадлежит:

In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate. 1. A plasma deposition method , comprising:loading a substrate onto a substrate stage within a chamber;generating a first plasma at a region separated from the substrate by a first distance;supplying a first process gas to the first plasma region to perform a pre-treatment process on the substrate;generating a second plasma at a region separated from the substrate by a second distance different from the first distance; andsupplying a second process gas to the second plasma region to perform a deposition process on the substrate.2. The plasma deposition method of claim 1 , wherein generating the first plasma and the second plasma comprises supplying microwave through an insulation plate disposed in an upper portion of the chamber.3. The plasma deposition method of claim 2 , wherein generating the first plasma comprises maintaining a first gap between the substrate stage and the insulation plate claim 2 , andwherein generating the second plasma comprises maintaining a second gap between the substrate stage and the insulation plate, the second gap being greater than the first gap.4. The plasma deposition method of claim 2 , further comprising adjusting a distance between the substrate stage and the insulation plate claim 2 , after generating the first plasma.5. The plasma deposition method of claim 4 , wherein adjusting the distance between the substrate stage and the insulation plate comprises lowering the substrate stage.6. The plasma ...

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Номер записи: 63
12-06-2014 дата публикации

METHOD FOR PROCESSING A GAS AND A DEVICE FOR PERFORMING THE METHOD

Номер: US20140159572A1
Автор: Pennington Dale, Risby Philip John
Принадлежит: GASPLAS AS

A method and device for processing a gas by forming microwave plasmas of the gas. The gas that is to be processed is set in a two or three co-axial vortex flow inside the device and exposed to a microwave field to form the plasma in the inner co-axial vortex flow, which subsequently is expelled as a plasma afterglow through an outlet of the device. 1. A method for processing a gas , wherein the method comprises: i) protrudes through a microwave chamber,', 'ii) walls of the elongated vessel not in contact with the microwave chamber are opaque to microwave radiation,', 'iii) walls of the elongated vessel that penetrate into the microwave chamber are transparent to microwave radiation,', 'iv) the elongated vessel has, at a first end, a co-axial elongated cylindrical exit channel with an inner diameter, D, equal to or less than a factor of 1/16 of a wavelength of an applied microwave field within the microwave chamber, and a length, E, equal to or less than a factor of (n+⅛), wherein n∈{0, 1, 2, 3}, of the wavelength of the applied microwave field within the microwave chamber, and', 'v) the elongated vessel is closed at a second end opposite the first end by a bottom wall,, 'employing an elongated vessel with an inner space of cylindrical symmetry, wherein the elongated vesselinjecting the gas that is to be processed such that the gas forms a first vortex flow running along an inner wall of the inner space of the elongated vessel and reflects from the bottom wall at the second end to form a second vortex flow of the gas that is to be processed running along a center axis of the elongated vessel from the bottom wall and out the exit channel at the first end, andforming a standing microwave in the microwave chamber aligned to form a wave crest at the center axis of the elongated vessel in an area of the elongated vessel that is transparent to microwave energy capable to excite at least a portion of the gas in the second vortex to form a microwave non-thermal plasma.2. The ...

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Номер записи: 64
18-03-2021 дата публикации

PLASMA PROCESSING APPARATUS AND PREDICTION METHOD OF THE CONDITION OF PLASMA PROCESSING APPARATUS

Номер: US20210082673A1
Автор: Kamaji Yoshito, Sumiya Masahiro
Принадлежит:

A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold. 14-. (canceled)5. A plasma processing apparatus state prediction method of predicting a state of a plasma processing apparatus including a processing chamber in which a sample is subjected to plasma processing , the method comprising:predicting the state of the plasma processing apparatus based on a first soundness index value obtained by analyzing a first data obtained from the plasma processing apparatus using a first algorithm and a second soundness index value obtained by analyzing a second data obtained from the plasma processing apparatus using a second algorithm,wherein the second algorithm is an algorithm in which a second time of the plasma processing in which the state is determined as abnormal by the second soundness index value is a time within a range of a time obtained by subtracting a predetermined time from a first time of the plasma processing in which the state is ...

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Номер записи: 65
23-03-2017 дата публикации

Plasma etching method

Номер: US20170084430A1
Автор: Ken'etsu Yokogawa, Masami Kamibayashi, Masatoshi Miyake, Naoyuki Kofuji, Nobuyuki Negishi
Принадлежит: Hitachi High Technologies Corp

In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

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Номер записи: 66
23-03-2017 дата публикации

Germanium-containing semiconductor device and method of forming

Номер: US20170084464A1
Автор: Cory Wajda, Gerrit J. Leusink, Kandabara N. Tapily, Robert D. Clark, Steven P. CONSIGLIO
Принадлежит: Tokyo Electron Ltd

A germanium-containing semiconductor device and a method for forming a germanium-containing semiconductor device are described. The method includes providing a germanium-containing substrate, depositing an aluminum-containing diffusion barrier layer on the germanium-containing substrate, depositing a high-k layer on the aluminum-containing diffusion barrier layer, and exposing the high-k layer to atomic oxygen to reduce the equivalent oxide thickness (EOT) of the high-k layer while avoiding oxidizing the germanium-containing substrate. The germanium-containing semiconductor device includes a germanium-containing substrate, an aluminum-containing diffusion barrier layer on the germanium-containing substrate, and a high-k layer on the aluminum-containing diffusion barrier layer, where the high-k layer has been exposed to atomic oxygen to reduce the EOT of the high-k layer while avoiding oxidizing the germanium-containing substrate.

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Номер записи: 67
31-03-2016 дата публикации

Substrate processing method

Номер: US20160093474A1
Автор: Kiyotaka Ishibashi, Osamu Morita
Принадлежит: Tokyo Electron Ltd

A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber.

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Номер записи: 68
21-03-2019 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20190088454A1
Автор: Kuwahara Yuichi, SATOU Ryouhei, Son Ryou, TAWARAYA Syuntaro
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a processing vessel, an upper structure that is provided on an upper portion of the processing vessel and generates plasma in a lower region thereof, a structure holding ring that is fixed around the upper structure, an arm that supports the ring and is movable up and down, a screw (including a bolt) that is fixed to one of the ring and the arm, and has a tip end abutting the other, and a pin that is provided in the ring or the arm, and passes through a hole for restricting horizontal movement of the ring. 1. A plasma processing apparatus comprising:a processing vessel;an upper structure that is provided on an upper portion of the processing vessel and generates plasma in a lower region thereof;a structure holding ring that is fixed around the upper structure;an arm that supports the ring and is movable up and down,a screw that is fixed to one of the ring and the arm, and has a tip end abutting the other, anda pin that is provided in the ring or the arm, and passes through a hole for restricting horizontal movement of the ring.2. The plasma processing apparatus according to claim 1 ,wherein the tip end of the screw is made of a ball which is rotatably held.3. The plasma processing apparatus according to claim 1 ,wherein the number of the screws is three or more.4. The plasma processing apparatus according to claim 2 ,wherein the number of the screws is three or more. The embodiments of the present invention relates to a plasma processing apparatus.In the related art, plasma processing apparatuses are described in Patent Document 1 (Japanese Unexamined Patent Publication No. 2013-16443), Patent Document 2 (Japanese Unexamined Patent Publication No. 2012-216614), and Patent Document 3 (Japanese Patent No. 4896337). Patent Document 1 discloses a plasma processing apparatus that irradiates an antenna disposed on a dielectric window located at the upper portion of a processing vessel with a microwave to generate plasma in the ...

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Номер записи: 69
30-03-2017 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20170092468A1
Автор: Masayuki SHIINA, Naoki Yasui, Tetsuo Ono
Принадлежит: Hitachi High Technologies Corp

The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

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Номер записи: 70
26-06-2014 дата публикации

Plasma doping apparatus and plasma doping method

Номер: US20140179028A1
Автор: Hirokazu Ueda, Masahiro Horigome, Masahiro Oka, Yuuki Kobayashi
Принадлежит: Tokyo Electron Ltd

Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×10 13 atoms/cm 2 .

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Номер записи: 71
26-06-2014 дата публикации

Method for forming a layer on a substrate at low temperatures

Номер: US20140179117A1
Автор: Alexander Gschwandtner, Jürgen Niess, Wilfried Lerch, Wilhelm Kegel
Принадлежит: Centrotherm Thermal Solutions GmbH and Co KG

A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm 2 , the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

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Номер записи: 72
28-03-2019 дата публикации

Methods for high precision plasma etching of substrates

Номер: US20190096694A1
Автор: Alok Ranjan, Mingmei Wang, Peter L.G. Ventzek
Принадлежит: Tokyo Electron Ltd

A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.

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Номер записи: 73
23-04-2015 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20150107773A1
Автор: Aita Michitaka, KATO Hideo, KONNO Masahiko, OKADA Taizo, SHINTAKU Masayuki, Suzuki Takashi
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member. 1. A plasma processing apparatus for exciting a processing gas by a microwave , comprising:a processing chamber;a mounting table provided in the processing chamber, the mounting table including a lower electrode and an electrostatic chuck provided on the lower electrode;a focus ring made of a dielectric material, extending in an annular shape so as to surround the electrostatic chuck;a first tubular member made of a dielectric material, the first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring;an annular member made of a dielectric material, provided between the focus ring and the first tubular member;a conductive second tubular member extending along an outer periphery of the first tubular member; anda choke portion made of a dielectric material, serving to suppress a microwave propagating through the first tubular member via the focus ring and the annular member,wherein the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an ...

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Номер записи: 74
23-04-2015 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20150110973A1
Автор: Takenao Nemoto, Toshihisa Nozawa
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container.

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Номер записи: 75
04-04-2019 дата публикации

Copper plasma etching method and manufacturing method of display panel

Номер: US20190103287A1
Автор: Ho Won YOON, Hyun Min Cho, Munpyo Hong, Sang Gab Kim, Seong Yong KWON
Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, Samsung Display Co Ltd

A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10° C. or less during the plasma-etching.

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Номер записи: 76
19-04-2018 дата публикации

PLASMA PROCESS APPARATUS

Номер: US20180108515A1
Автор: Iwasaki Masahide
Принадлежит:

A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion. 1. A plasma process apparatus in which a substrate subjected to a predetermined plasma process is housed in a process chamber capable of being evacuated to a reduced pressure , and a process gas and microwaves are introduced into the process chamber so as to generate plasma from the process gas so as to perform the predetermined plasma process on the substrate , the plasma process apparatus comprising:a microwave transmission line that transmits the microwaves from a microwave generator to the process chamber, wherein a predetermined section of the microwave transmission line is formed of a coaxial line whose inner conductive body is formed of a hollow pipe, the section including one end portion of the microwave transmission line; anda monitor portion that monitors through the hollow pipe the plasma process performed in the process chamber.2. The plasma process apparatus of claim 1 , wherein the monitor portion includes a plasma emission measurement portion that spectroscopically measures emission of the plasma in the process chamber.3. The plasma process apparatus of claim 1 , wherein the monitor ...

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Номер записи: 77
30-04-2015 дата публикации

ETCHING METHOD FOR SUBSTRATE TO BE PROCESSED AND PLASMA-ETCHING DEVICE

Номер: US20150118858A1
Автор: Takaba Hiroyuki
Принадлежит:

In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates a substrate to be processed; (b1) a step in which the inside of the processing container is evacuated; (c1) a step in which a noble gas is supplied into the processing container; and (d1) a step in which microwaves are supplied into the processing container so as to excite the plasma of the noble gas inside the processing container. The sequential process including the step of supplying the etchant of supplying the etchant gas, the evacuating step, the step of supplying the noble gas, and the step of exciting the plasma of the noble gas may be repeated. 1. A method of etching a substrate to be processed , the method comprising:supplying an etchant gas into a processing container that accommodates the substrate to be processed;evacuating the inside of the processing container;supplying a noble gas into the processing container; andexciting plasma of the noble gas within the processing container by supplying microwaves into the processing container.2. The method of claim 1 , wherein a series of processes including the supplying of the etchant gas claim 1 , the evacuating claim 1 , the supplying of the noble gas claim 1 , and the exciting of the plasma of the noble gas is repeated.3. The method of claim 1 , wherein the substrate to be processed includes a polycrystalline silicon layer claim 1 , and the etchant gas is Clgas.4. A plasma etching device comprising:a processing container;a first supply unit configured to supply an etchant gas into the processing container;an exhaust unit configured to evacuate an inside of the processing container;a second supply unit configured to supply a noble gas into the processing container;a microwave supply unit configured to supply microwaves into the processing container; anda control unit configured to control the first supply unit, the ...

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Номер записи: 78
11-04-2019 дата публикации

PLASMA REACTOR HAVING DIGITAL CONTROL OVER ROTATION FREQUENCY OF A MICROWAVE FIELD WITH DIRECT UP-CONVERSION

Номер: US20190108981A1
Автор: Kobayashi Satoru, LUBOMIRSKY DMITRY, Park Soonam, Ramaswamy Kartik, Sugai Hideo
Принадлежит:

A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency. 1. A plasma reactor comprising:a cylindrical microwave cavity overlying a workpiece processing chamber, and first and second coupling apertures in a sidewall of said cylindrical microwave cavity spaced apart by an angle;a system-controlling clock to generate a system clock signal; and digital circuitry configured to receive the system clock signal and generate therefrom two digital outputs, at least one of the two digital outputs being a combination of a first component having an first frequency that is lower than the microwave frequency and a second component having a second frequency that is lower than the first frequency,', 'a digital-to-analog converter coupled to said two digital outputs to generate two analog outputs corresponding to said two digital outputs, and', 'an up-converter coupled to said two analog outputs to convert the two analog outputs to the microwave frequency to provide said microwave outputs., 'a microwave source having a microwave frequency and comprising a microwave controller having respective microwave outputs coupled to respective ones of said first and second coupling apertures, said microwave controller including'}2. The reactor of claim 1 , wherein the digital circuitry is configured to generate first and second digital modulation signals at the second frequency and a first digital carrier signal at the first frequency.3. The reactor of claim 2 , wherein the digital circuitry includes a first multiplier to multiply the first digital carrier signal by the first digital modulation signal to generate a first of the two digital outputs.4. The reactor of claim 3 , wherein the digital circuitry includes a second multiplier to multiply the second digital carrier signal by the first digital modulation signal to generate a second of the ...

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Номер записи: 79
28-04-2016 дата публикации

METHODS FOR FORMING A METAL SILICIDE INTERCONNECTION NANOWIRE STRUCTURE

Номер: US20160118260A1
Автор: Cockburn Andrew, Godet Ludovic, Lakshmanan Annamalai, Ma Paul F., MEBARKI BENCHERKI, Naik Mehul, Singh Kaushal K.
Принадлежит:

Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas. 1. A method for forming nanowires in back-end interconnection structure for semiconductor devices , comprising:forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process;thermal treating the metal silicide layer in a processing chamber;applying a microwave power in the processing chamber while thermal treating the metal silicide layer; andmaintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.2. The method of claim 1 , further comprising:forming metal silicide nanowires on the substrate for semiconductor devices.3. The method of claim 1 , wherein thermal treating the metal silicide layer further comprises:emitting a light radiation in the processing chamber while thermal treating the metal silicide layer.4. The method of claim 3 , wherein the light radiation is an IR or UV light.5. The method of claim 1 , wherein the metal silicide layer is a nickel silicide layer.6. A method ...

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Номер записи: 80
27-04-2017 дата публикации

Deposition System With Integrated Cooling On A Rotating Drum

Номер: US20170117119A1
Автор: DeVito Richard
Принадлежит:

In one aspect, a system of depositing a film on a substrate is disclosed, which includes at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive ionic species. The system further includes a pair of inner and outer concentric cylinders, where the outer cylinder has first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders. At least one mount is coupled to the inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with the inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two regions so as to expose the substrate alternatingly to said metal atoms and said reactive ionic species. Further, the outer cylinder includes at least one cooling channel through which a cooling fluid can flow for maintaining the inner surface of the outer cylinder at a temperature suitable for radiative cooling of the substrate. 1. A system of depositing a film on a substrate , comprising:at least one metallization source for generating metal atoms, at least one reactive source for generating at least one reactive ionic species,a pair of inner and outer concentric cylinders, said outer cylinder having first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders,at least one mount coupled to said inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two ...

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Номер записи: 81
18-04-2019 дата публикации

PLASMA PROCESSING APPARATUS AND METHOD

Номер: US20190115193A1
Автор: Aramaki Tooru, IKEDA Norihiko, Nishimori Yasuhiro, YASUI Naoki
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface. 111-. (canceled)12. A plasma processing method for processing a sample which is placed on an upper surface of a sample stage disposed in a processing chamber , the method further comprising steps of:generating plasma using a processing gas supplied into the processing chamber which is decompressed to a predetermined pressure;applying radio frequency power during the plasma is generated to an electrode inside the sample stage and a ring-shaped member which is constituted by a conducting material and arranged in an outer circumferential region of the upper surface of the sample stage, and making bias potential using the radio frequency power over a surface of the sample placed on the upper surface of the sample stage and over a surface of a dielectric ring member which is arranged in an outer circumferential region of the upper surface of the sample stage and covers the ring-shaped member against the plasma; andwherein the top surface of the ring-shaped member is set higher than the upper surface of the sample stage, and the radio frequency power applied to the ring shaped member is adjusted so as not to be ...

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Номер записи: 82
07-05-2015 дата публикации

Controlling etch rate drift and particles during plasma processing

Номер: US20150126036A1
Автор: Jianping Zhao
Принадлежит: Tokyo Electron Ltd

The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from ≦60%, and F in a range of ≦75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.

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Номер записи: 83
07-05-2015 дата публикации

Multi-cell resonator microwave surface-wave plasma apparatus

Номер: US20150126046A1
Автор: Jianping Zhao, John ENTRALGO, Megan DOPPEL, Merritt Funk, Toshihisa Nozawa
Принадлежит: Tokyo Electron Ltd

A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

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Номер записи: 84
05-05-2016 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20160126066A1
Автор: Yoshikawa Jun
Принадлежит: TOKYO ELECTRON LIMITED

A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole. 1. A plasma processing apparatus comprising:a processing container that defines a processing space;a gas supply unit provided on a sidewall of the processing container, the gas supply unit being configured to supply a gas to the processing space;a dielectric member having a facing surface that faces the processing space, andan antenna provided on a surface opposite to the facing surface of the dielectric member, the antenna being configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member,wherein the gas supply unit includes:a transport hole configured to transport the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container, andan injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space, the injection hole having a diameter larger than that of the transport hole.3. The plasma processing apparatus of claim 1 , wherein the diameter of the injection hole is ...

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Номер записи: 85
05-05-2016 дата публикации

Method of etching organic film

Номер: US20160126071A1
Автор: Akinori Kitamura, Hai Woo Lee, Kosuke Kariu, Toshihisa Ozu
Принадлежит: Tokyo Electron Ltd

An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.

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Номер записи: 86
14-05-2015 дата публикации

METHOD FOR INJECTING DOPANT INTO SUBSTRATE TO BE PROCESSED, AND PLASMA DOPING APPARATUS

Номер: US20150132929A1
Автор: Horigome Masahiro, Nemoto Takenao, Oka Masahiro, Ueda Hirokazu, Yamazaki Masahiro
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH, an inert gas, and Hgas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003. 1. A method of injecting a dopant into a processing target substrate , the method comprising:preparing a processing target substrate within a processing container; and{'sub': 3', '2, 'injecting the dopant into the processing target substrate by supplying a doping gas containing AsH, an inert gas, and Hgas into the processing container as well as applying plasma excitation energy to the inside of the processing container,'}wherein, when injecting the dopant, a ratio of hydrogen partial pressure to total gas pressure within the processing container ranges from 0.0015 to 0.003.2. The method of claim 1 , wherein claim 1 , when injecting the dopant claim 1 , the inert gas is supplied into the processing container as well as the plasma excitation energy is applied to the inside of the processing container to generate plasma of the inert gas claim 1 , and then claim 1 , the doping gas claim 1 , the inert gas claim 1 , and the Hgas are supplied into the processing container as well as the plasma excitation energy is applied to the inside of the processing container.3. The method of claim 1 , further comprising claim 1 , prior to preparing the processing target substrate within the processing container claim 1 , preparing a wafer within the processing container claim 1 , supplying the inert gas into the processing container claim 1 , and applying ...

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Номер записи: 87
25-04-2019 дата публикации

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20190122864A1
Автор: Aramaki Tooru, Izawa Masaru, Yokogawa Kenetsu
Принадлежит:

A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing. 1. A plasma processing method that processes a wafer , which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container , using a plasma formed in the processing chamber , the method comprising:processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed during the processing.2. The plasma processing method according to claim 1 , whereinthe second high-frequency power to be supplied to the second electrode via the resonant circuit to which a coil and a capacitor are arranged in series is adjusted in the processing.3. The plasma processing method according to claim 2 , whereinan inductance of the coil is adjusted to adjust the second high-frequency power to be supplied to the second electrode in the processing.4. The plasma processing method according to claim 2 , whereinan inductance of the coil is adjusted using a result of voltage detected in a location between the coil and the ...

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Номер записи: 88
27-05-2021 дата публикации

PLASMA PROCESSING DEVICE

Номер: US20210159055A1
Автор: Aramaki Tooru, Izawa Masaru, Yokogawa Kenetsu
Принадлежит:

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path. 1. A plasma processing apparatus comprising:a processing chamber which is disposed in a vacuum vessel and is decompressed internally and a plasma is generated using a process gas supplied therein;a sample stage which is disposed in the processing chamber and on which a sample to be processed by using the plasma is located and held, the sample stage including a metallic base which has a cap-type structure including at least one of recesses and a cooling plate which is disposed below the base and connected with the cap-type structure, the cooling plate including a medium flow channel and a dielectric film which is disposed on an upper surface of the base and includes a conductive film disposed internally therein;a first power supply configured to supply high-frequency power to the conductive film; andat least one aggregation of a plurality of Peltier elements which are connected in series and housed inside at least one of spaces in the base which are constituted by the at least one of recesses of the cap-shaped structure and the cooling plate which are connected each other, each of the plurality of Peltier elements being ...

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Номер записи: 89
10-05-2018 дата публикации

Treating Particles

Номер: US20180127274A1
Автор: Buckland John, Walters Dylan
Принадлежит:

A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles. 1. A method of treating particles by disaggregating , deagglomerating , exfoliating , cleaning , functionalising , doping , decorating and/or repairing said particles , in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.2. A method according to in which the particles treated are graphite particles.3. A method according to in which the graphite particles are exfoliated to produce graphene containing particles claim 2 , preferably graphene nanoplatelets (GNPs).4. A method according to in which the particles treated are nano-particles.5. A method according to in which the nanoparticles are carbon nano-particles claim 4 , preferably fullerenes such as carbon nanotubes (CNTs) claim 4 , or graphene containing nanoparticles such as GNPs.6. A method according to in which glow discharge plasma is generated by the electrodes.7. A method according to in which plasma is formed in a localised region around each electrode.8. A method according to in which a gas or gaseous mixture is introduced into the chamber to sustain the plasma claim 1 , in which said gas or gaseous mixture is introduced from each electrode.9. A method according to in which the electrodes are moved at a speed which is varied during the course of the plasma treatment so as to control the interaction between the plasma generated by the electrodes and the particles.10. A method according to in ...

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Номер записи: 90
21-05-2015 дата публикации

Treating Particles

Номер: US20150135993A1
Автор: Buckland John, Walters Dylan
Принадлежит:

A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles. 1. A method of treating particles by disaggregating , deagglomerating , exfoliating , cleaning , functionalising , doping , decorating and/or repairing said particles , in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.2. A method according to in which the particles treated are graphite particles.3. A method according to in which the graphite particles are exfoliated to produce graphene containing particles claim 2 , preferably graphene nanoplatelets (GNPs).4. A method according to in which the particles treated are nano-particles.5. A method according to in which the nanoparticles are carbon nano-particles claim 4 , preferably fullerenes such as carbon nanotubes (CNTs) claim 4 , or graphene containing nanoparticles such as GNPs.6. A method according to in which glow discharge plasma is generated by the electrodes.7. A method according to in which plasma is formed in a localised region around each electrode.8. A method according to in which a gas or gaseous mixture is introduced into the chamber to sustain the plasma claim 1 , in which said gas or gaseous mixture is introduced from each electrode.9. A method according to in which—i) particles in the treatment chamber undergo a first method in accordance with any previous claim, andii) after the commencement of step i) and while remaining the treatment chamber, the particles or particles produced by ...

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Номер записи: 91
10-05-2018 дата публикации

Etching method

Номер: US20180130670A1
Автор: Takayuki Katsunuma
Принадлежит: Tokyo Electron Ltd

Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.

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Номер записи: 92
23-04-2020 дата публикации

Axisymmetric material deposition from plasma assisted by angled gas flow

Номер: US20200123653A1
Автор: Jeremy Scholz
Принадлежит: Diamond Foundry Inc

A film deposition system includes a chamber, a stage disposed in the chamber configured to support a substrate, one or more gas inlet structures configured to supply one or more gases to an interior of the chamber, and one or more microwave-introducing windows that introduce microwave radiation to the chamber to excite the one or more source gases to produce a plasma proximate the stage. The gas inlet structures include one or more angled gas inlets that introduce a plasma-shaping gas flow to the chamber at an angle relative to a symmetry axis of the stage. The plasma-shaping gas flow interacts with the plasma in a way that facilitates axisymmetric deposition of material on a surface of the substrate with the plasma.

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Номер записи: 93
11-05-2017 дата публикации

Member for Plasma Processing Apparatus and Plasma Processing Apparatus

Номер: US20170133204A1
Автор: Ikuta Hiroyuki, Kamada Toyohiro, MINOURA Yuya, Moyama Kazuki
Принадлежит:

There is provided a member for a plasma processing apparatus, the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed. The member includes a face of the member exposed to the plasma and coated with a protection film. The protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film. The plurality of column-shaped portions is adjacent to one another without gaps therebetween. 1. A member for a plasma processing apparatus , the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed , the member comprising a face of the member exposed to the plasma and coated with a protection film ,wherein the protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film, the plurality of column-shaped portions being collected to be adjacent to one another without gaps therebetween.2. The member for the plasma processing apparatus of claim 1 , wherein the protection film has a thickness not less than 10 μm but not greater than 100 μm.3. The member for the plasma processing apparatus of claim 1 , wherein the protection film has a surface roughness not greater than 3 μm.4. The member for the plasma processing apparatus of claim 1 , wherein the protection film is coated on the member by using an ion plating method.5. The member for the plasma processing apparatus of claim 1 , further comprising a ceiling plate claim 1 , configured to radiate microwaves into the processing container claim 1 , installed within the processing container claim 1 , and the protection film is coated on the ceiling plate ...

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Номер записи: 94
03-06-2021 дата публикации

FILM FORMING METHOD AND PROCESSING APPARATUS

Номер: US20210164103A1
Автор: IFUKU Ryota, MATSUMOTO Takashi, Sugiura Masahito, Wada Makoto
Принадлежит:

There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas. 1. A film forming method of forming a carbon-containing film by a microwave plasma from a microwave source , the film forming method comprising:a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container;a placement step of placing a substrate on a stage within the processing container; anda film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.2. The film forming method of claim 1 , further comprising: a cleaning step of cleaning an interior of the processing container before the dummy step and after the film forming step.3. The film forming method of claim 2 , wherein the cleaning step is performed in a state in which a dummy substrate is placed on the stage.4. The film forming method of claim 3 , wherein the dummy step comprises:performing a plasma processing using a hydrogen-containing gas at a first pressure;generating plasma of a hydrogen-and-argon-containing gas at the first pressure; andgenerating plasma of the first carbon-containing gas by reducing an internal pressure of the processing container to a second pressure lower than the first pressure and starting to supply the first carbon-containing gas.5. The film forming method of claim 4 , wherein the film forming step comprises:performing an annealing using a hydrogen-containing gas at a first pressure;generating plasma of an argon-containing gas at the first pressure; andgenerating ...

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Номер записи: 95
01-09-2022 дата публикации

MICROWAVE PLASMA PROCESSING APPARATUS

Номер: US20220277935A1
Автор: IKEDA Taro, KAMATA Eiki, KOMATSU Tomohito, SATO Mikio
Принадлежит:

A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other. 1. A microwave plasma processing apparatus , comprising:a microwave supply part configured to supply a microwave;a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; anda microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave via the microwave emission member,wherein the ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.2. The microwave plasma processing apparatus as claimed in claim 1 , wherein at least one of the at least two recesses has a depth in a range of λ/4±λ/8 when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as λ.3. The microwave plasma processing apparatus as claimed in claim 1 , wherein the one of the at least two recesses has a depth that varies in an exponential manner as compared to a depth of the other of the at least two recesses.4. The microwave plasma processing apparatus as claimed in claim 1 , wherein the at least two recesses include one or more recesses distant outward in a range of 10 to 100 mm from an end of the opening.5. The microwave plasma ...

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Номер записи: 96
17-05-2018 дата публикации

PHOTOLUMINESCENT CARBON NANOPARTICLES AND METHOD OF PREPARING THE SAME

Номер: US20180133680A1
Автор: LEE Hyun-Uk, Lee Jouhahn, PARK So Young
Принадлежит: KOREA BASIC SCIENCE INSTITUTE

Photoluminescent carbon nanoparticles and a method of preparing the same are described herein. A method of preparing photoluminescent carbon nanoparticles includes obtaining carbon nanodots, and treating the carbon nanodots with plasma. 1. A method of preparing photoluminescent carbon nanoparticles , the method comprising:obtaining carbon nanodots suspended in a liquid; andtreating the carbon nanodots with plasma.2. (canceled)3. The method of claim 1 , wherein the carbon nanodots are prepared by treating an organic sample by any one method selected from ultrasonic irradiation claim 1 , a hydrothermal method claim 1 , a microwave method claim 1 , and a sol-gel method.4. The method of claim 1 , wherein the treating the carbon nanodots comprises introducing a mixture of argon and a reactive gas in a plasma chamber used for treating the carbon nanodots with plasma.5. The method of claim 4 , wherein the reactive gas is one or more of N claim 4 , H claim 4 , O claim 4 , F claim 4 , CHand CH.6. The method of claim 4 , wherein argon and the reactive gas are mixed in a volume ratio of 10:90 to 90:10.7. The method of claim 1 , wherein the treating the carbon nanodots comprises treating the carbon nanodots with plasma under an RF power of 70 W to 300 W for a treatment time of 5 minutes to 180 minutes.8. Photoluminescent carbon nanoparticles prepared by the method of .9. The photoluminescent carbon nanoparticles of claim 8 , wherein an absorption wavelength of the photoluminescent carbon nanoparticles is 330 nm to 700 nm.10. The photoluminescent carbon nanoparticles of claim 8 , wherein a photoluminescent wavelength of the photoluminescent carbon nanoparticles is 350 nm to 800 nm.11. A biocompatible photoluminescent source comprising photoluminescent carbon nanoparticles of .12. An optical element comprising the photoluminescent carbon nanoparticles of .13. A paint comprising photoluminescent carbon nanoparticles of .14. A method of preparing photoluminescent carbon ...

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Номер записи: 97
03-06-2021 дата публикации

SUBSTRATE PROCESSING APPARATUS HAVING ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING METHOD

Номер: US20210166940A1
Автор: NOZAWA Toshihisa
Принадлежит:

Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface. 1. A substrate processing apparatus comprising:a chamber;an upper cover provided inside the chamber;an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber; anda plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck,wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.2. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes a shower plate provided below the upper cover so as to face the upper cover.3. The substrate processing apparatus according to claim 2 , wherein the upper cover is provided as a ground electrode.4. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes a microwave plasma generating apparatus.5. The substrate processing apparatus according to claim 1 , wherein the plasma unit includes an inductively coupled plasma ...

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Номер записи: 98
07-08-2014 дата публикации

Plasma Etching Method

Номер: US20140220785A1
Автор: Mamoru Yakushiji, Michikazu Morimoto, Tetsuo Ono, Tomoyuki Watanabe
Принадлежит: Hitachi High Technologies Corp

A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

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Номер записи: 99
17-05-2018 дата публикации

Microwave Chemical Processing

Номер: US20180138017A1
Автор: Stowell Michael W.
Принадлежит: Lyten, Inc.

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation. 1. A gas processing system , comprising:a waveguide having a first gas inlet, a second gas inlet downstream of the first gas inlet, and a length, wherein the first inlet is configured to receive a flow of a supply gas, and the second inlet is configured to receive a flow of a process gas; anda pulsed microwave radiation source coupled to the waveguide to provide microwave radiation and to generate a plasma in the supply gas, the microwave radiation propagating in a direction along the length of the waveguide to react with the process gas, wherein:the microwave radiation source is configured to pulse the microwave radiation on and off at a frequency from 500 Hz to 1000 kHz and with a duty cycle less than 90%;a majority of the flow of the supply gas and a majority of the flow of the process gas are parallel to the direction of the microwave radiation propagation;the flow of the process gas is greater than 5 slm; andthe waveguide is configured to accommodate pressures of at least 0.1 atmosphere.2. The gas processing system of claim 1 , wherein the waveguide has cross-sectional dimensions of 0.75 ...

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Номер записи: 100