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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 12071. Отображено 100.
05-01-2012 дата публикации

Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused light

Номер: US20120001302A1
Автор: Hisashi Matsumura, Kazuyoshi Itoh, Shunro Fuke, Yasuo Kanematsu
Принадлежит: Osaka University NUC

An apparatus ( 100 ) for fabricating a semiconductor thin film includes: substrate surface pretreatment means ( 101 ) for pretreating a surface of a substrate; organic layer coating means ( 102 ) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means ( 103 ) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means ( 104 ) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means ( 105 ) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means ( 106 ) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

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Номер записи: 1
05-01-2012 дата публикации

Vapor-phase process apparatus, vapor-phase process method, and substrate

Номер: US20120003142A1
Автор: Eiryo Takasuka, Masaki Ueno, Toshio Ueda, Toshiyuki Kuramoto
Принадлежит: Sumitomo Electric Industries Ltd

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

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Номер записи: 2
23-02-2012 дата публикации

Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device

Номер: US20120043645A1
Автор: Hidenori Mikami, Keiji Ishibashi, Naoki Matsumoto
Принадлежит: Sumitomo Electric Industries Ltd

A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

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Номер записи: 3
22-03-2012 дата публикации

High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof

Номер: US20120070366A1
Автор: Guoging Wu, Hanbin Zhao, Linyao Tang, Lizhen Gu, Xueji Yin, Yong Zhu, Zengwei Ge
Принадлежит: RESEARCH AND DEVELOPEMENT CENTER SHANGHAI INSTITUTE OF CERAMICS, Shanghai Institute of Ceramics of CAS

A high-purity tellurium dioxide (TeO 2 ) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO 2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10 −13 g/g.

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Номер записи: 4
22-03-2012 дата публикации

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

Номер: US20120070929A1
Автор: Hideaki Nakahata, Katsushi Akita, Kensaku Motoki, Shin Hashimoto, Shinsuke Fujiwara
Принадлежит: Koha Co Ltd, Sumitomo Electric Industries Ltd

Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S 105 , a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11 a of a gallium oxide substrate 11 . After the growth of the buffer layer 13 , while supplying a gas G 2 , which contains hydrogen and nitrogen, into a growth reactor 10 , the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.

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Номер записи: 5
19-04-2012 дата публикации

Low-temperature synthesis of colloidal nanocrystals

Номер: US20120090533A1
Автор: Jacqueline T. Siy, Michael H. Bartl
Принадлежит: University of Utah Research Foundation UURF

Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

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Номер записи: 6
03-05-2012 дата публикации

Group iii nitride semiconductor element and epitaxial wafer

Номер: US20120104433A1
Автор: Fumitake Nakanishi, Masaki Ueno, Yohei Enya, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

A primary surface 23 a of a supporting base 23 of a light-emitting diode 21 a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25 a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane S R3 shown in FIG. 5 ) of the GaN supporting base and the (0001) plane of a buffer layer 33 a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane S R4 shown in FIG. 5 ) and the (0001) plane of a well layer 37 a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

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Номер записи: 7
03-05-2012 дата публикации

Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device

Номер: US20120104558A1
Автор: Keiji Ishibashi
Принадлежит: Sumitomo Electric Industries Ltd

In a semiconductor device 100 , it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×10 10 pieces/cm 2 to 2000×10 10 pieces/cm 2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 . By thus preventing C from piling up, a high-resistivity layer is prevented from being formed on the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 . Accordingly, it is possible to reduce electrical resistance at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 , and improve the crystal quality of the epitaxial layer 22 . Consequently, it is possible to improve the emission intensity and yield of the semiconductor device 100.

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Номер записи: 8
10-05-2012 дата публикации

Generating and detecting radiation

Номер: US20120113417A1
Автор: Alexander Giles Davies, Christopher Wood, David Graham Moodie, Edmund Linfield, John Cunningham, Michael James Robertson, Paul John Cannard, Xin Chen
Принадлежит: Individual

A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

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Номер записи: 9
07-06-2012 дата публикации

High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith

Номер: US20120138952A1
Автор: Nikolaus Dietz
Принадлежит: Georgia State University Research Foundation Inc

A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

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Номер записи: 10
14-06-2012 дата публикации

Quaternary chalcogenide wafers

Номер: US20120145970A1
Автор: Alex Sergey Ionkin, Brian M. Fish
Принадлежит: EI Du Pont de Nemours and Co

Disclosed herein are processes for making quaternary chalcogenide wafers. The process comprises heating a mixture of quaternary chalcogenide crystals and flux and then cooling the mixture to form a solidified mixture comprising ingots of quaternary chalcogenide and flux. The process also comprises isolating one or more ingots of quaternary chalcogenide from the solidified mixture and mounting at least one ingot in a polymer binder to form a quaternary chalcogenide-polymer composite. The process also comprises optionally slicing the quaternary chalcogenide-polymer composite to form one or more quaternary chalcogenide-polymer composite wafers. The quaternary chalcogenide wafers are useful for forming solar cells.

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Номер записи: 11
28-06-2012 дата публикации

Epitaxial substrate and method for manufacturing epitaxial substrate

Номер: US20120161152A1
Автор: Makoto Miyoshi, Mikiya Ichimura, Mitsuhiro Tanaka, Shigeaki Sumiya, Sota Maehara
Принадлежит: NGK Insulators Ltd

Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

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Номер записи: 12
26-07-2012 дата публикации

Method for making gallium nitride substrate

Номер: US20120190172A1
Автор: Jian-Shihn Tsang
Принадлежит: Hon Hai Precision Industry Co Ltd

A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon.

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Номер записи: 13
20-09-2012 дата публикации

Production method, production vessel and member for nitride crystal

Номер: US20120237431A1
Автор: Makiko Kiyomi, Toru Ishiguro, Yoshihiko Yamamura, Yuji Kagamitani, Yutaka Mikawa
Принадлежит: Japan Steel Works Ltd, Mitsubishi Chemical Corp, Tohoku University NUC

To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.

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Номер записи: 14
11-10-2012 дата публикации

Epitaxial growth method and devices

Номер: US20120256191A1
Автор: Anton Devilliers, Erik Byers, Scott Sills
Принадлежит: Individual

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

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Номер записи: 15
22-11-2012 дата публикации

Methods For Monitoring Growth Of Semiconductor Layers

Номер: US20120293813A1
Автор: Eric M. Rehder, Matthew Youngers, Peter Rice
Принадлежит: Kopin Corp

Deposition of a thin film is monitored by illuminating the thin film with an incident beam during deposition of the thin film, wherein at least a portion of the incident beam reflects off the thin film to yield a reflected beam; measuring intensity of the reflected beam from the thin film during growth of the thin film to obtain reflectance; and curve-fitting at least part of an oscillation represented by the reflectance data to obtain information about at least one of thickness, growth rate, composition, and doping of the thin film.

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Номер записи: 16
20-12-2012 дата публикации

Chemical vapor deposition apparatus

Номер: US20120322168A1
Автор: Evgeny Vladimirovich Yakovlev, Heng Liu
Принадлежит: Individual

System and method for forming one or more materials. The system includes a susceptor component configured to rotate around a central axis, and a showerhead component that is located above the susceptor component and not in direct contact with the susceptor component. Additionally, the system includes one or more substrate holders located on the susceptor component and configured to rotate around the central axis and also rotate around corresponding holder axes respectively, and a central component. Moreover, the system includes one or more first inlets formed within the central component, one or more second inlets, and one or more third inlets formed within the showerhead component and located farther away from the central component than the one or more second inlets.

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Номер записи: 17
03-01-2013 дата публикации

Device and method for producing bulk single crystals

Номер: US20130000552A1
Автор: Jason SCHMITT
Принадлежит: NITRIDE SOLUTIONS Inc

The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.

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Номер записи: 18
10-01-2013 дата публикации

Methods for depositing thin films comprising gallium nitride by atomic layer deposition

Номер: US20130012003A1
Автор: Antti Niskanen, Suvi Haukka, Viljami J. Pore
Принадлежит: Individual

Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.

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Номер записи: 19
24-01-2013 дата публикации

Use of freestanding nitride veneers in semiconductor devices

Номер: US20130019927A1
Автор: Richard L. Ross, Scott M. Zimmerman, William R. Livesay
Принадлежит: Individual

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

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Номер записи: 20
31-01-2013 дата публикации

GaN BONDED SUBSTRATE AND METHOD OF MANUFACTURING GaN BONDED SUBSTRATE

Номер: US20130029472A1
Автор: Bo Hyun Lee, Bongmo Park, Jun Sung Choi, Kwang Je Woo, Seung Yong Park
Принадлежит: Samsung Corning Precision Materials Co Ltd

A gallium nitride (GaN) bonded substrate and a method of manufacturing a GaN bonded substrate in which a polycrystalline nitride-based substrate is used. The method includes loading a single crystalline GaN substrate and a polycrystalline nitride substrate into a bonder; raising the temperature in the bonder; bonding the single crystalline GaN substrate and the polycrystalline nitride substrate together by pressing the single crystalline GaN substrate and the polycrystalline nitride substrate against each other after the step of raising the temperature; and cooling the resultant bonded substrate.

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Номер записи: 21
21-02-2013 дата публикации

ION ETCHING OF GROWING InP NANOCRYSTALS USING MICROWAVE

Номер: US20130043210A1
Автор: Derek D. Lovingood, Geoffrey F. Strouse
Принадлежит: Florida State University Research Foundation Inc

High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

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Номер записи: 22
21-02-2013 дата публикации

Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template

Номер: US20130043442A1
Автор: Hajime Fujikura, Michiko Matsuda, Taichiroo Konno
Принадлежит: Hitachi Cable Ltd

A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

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Номер записи: 23
28-02-2013 дата публикации

Deposition methods for the formation of iii/v semiconductor materials, and related structures

Номер: US20130049012A1
Автор: Christophe Figuet, Pierre Tomasini
Принадлежит: Soitec SA

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

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Номер записи: 24
07-03-2013 дата публикации

Metal Oxide Semiconductor Films, Structures, and Methods

Номер: US20130056691A1
Автор: Henry W. White, Tae-Seok Lee, Yungryel Ryu
Принадлежит: Moxtronics Inc

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

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Номер записи: 25
21-03-2013 дата публикации

Method for growing ii-vi semiconductor crystals and ii-vi semiconductor layers

Номер: US20130068156A1
Автор: Alex Fauler
Принадлежит: Albert Ludwigs Universitaet Freiburg

A method for growing II-VI semiconductor crystals and II-VI semiconductor layers as well as crystals and layers of their ternary or quaternary compounds from the liquid or gas phase is proposed. To this end, the solid starting materials are introduced into a growing chamber for the growing of crystals. Inside the growing chamber, carbon monoxide is supplied by way of reducing agent. At least certain zones of the growing chamber are heated to a temperature at which a first-order phase transition of the starting materials takes place and the starting materials pass into the liquid or gas phase. The starting materials are then cooled down accompanied by the formation of a semiconductor crystal or semiconductor layer, again with a first-order phase transition taking place. The oxygen present in the growing chamber is bound by the carbon monoxide and the formation of an oxide layer at the phase boundary of the growing semiconductor crystal or semiconductor layer is prevented.

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Номер записи: 26
21-03-2013 дата публикации

Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate

Номер: US20130069075A1
Автор: Hajime Fujikura, Taichiroo Konno, Yuichi Oshima
Принадлежит: Hitachi Cable Ltd

A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

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Номер записи: 27
11-04-2013 дата публикации

Nitride semiconductor wafer, nitride semiconductor device, and method for growing nitride semiconductor crystal

Номер: US20130087762A1
Автор: Hung Hung, Jongil Hwang, Naoharu Sugiyama, Shinya Nunoue, Tomonari SHIODA
Принадлежит: Toshiba Corp

According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 18 cm −3 or more and less than 1×10 21 cm −3 . The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

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Номер записи: 28
11-04-2013 дата публикации

Epitaxial growth substrate, semiconductor device, and epitaxial growth method

Номер: US20130087807A1
Автор: Daisuke Hino, Tetsuya Ikuta, Tomohiko Shibata
Принадлежит: Dowa Electronics Materials Co Ltd

In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

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Номер записи: 29
25-04-2013 дата публикации

Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method

Номер: US20130099180A1
Автор: James S. Speck, Paul M. VON DOLLEN, Shuji Nakamura, Siddha Pimputkar
Принадлежит: UNIVERSITY OF CALIFORNIA

Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

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Номер записи: 30
25-04-2013 дата публикации

SUBSTRATE FOR EPITAXIAL GROWTH

Номер: US20130099246A1
Автор: Czernecki Robert, Leszczynski Michal, Perlin Piotr, Sarzynski Marcin, Suski Tadeusz
Принадлежит:

A surface of the substrate consists in plurality of neighbouring stripe shaped flat surfaces of a width from 1 to 2000 μm. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). Disorientation angle of each of the flat surfaces is between 0 and 3 degree and is different for each pair of neighbouring flat surfaces. Substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by MOCVD or MBE method which permits for realization of a non-absorbing mirrors laser diode emitting a light of the wavelength from 380 to 550 nm and a laser diodes array which may emit simultaneously light of various wavelengths in the range of 380 to 550 nm. 1. A substrate for epitaxial growth made of gallium nitride crystal , and having epi-ready growth surface , characterized in that the growth surface consists of set of neighbouring flat surfaces in form of stripes of a width from 1 to 2000 μm , longer edges of the stripes are parallel on to another , planes of the stripes are disoriented relatively to the crystallographic plane defined by Miller-Bravais indices (0001) , (10-10) , (11-22) or (11-20) and disorientation angle of each of the flat surfaces is from 0 to 3 degree and it is different for each of two neighbouring surfaces.2. The substrate according to claim 1 , characterized in that all the flat surfaces are disoriented relatively to the crystallographic plane defined by the Miller-Bravais indices (0001).3. The substrate according to claim 2 , characterized in that the longer edges of all the flat surfaces are parallel to a given crystallographic direction of gallium nitride crystal while the flat surfaces are delimited by said longer edges and form over the whole crystal an array of repeating sequences.4. The substrate according to claim 3 , characterized in that the ...

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Номер записи: 31
16-05-2013 дата публикации

Large area nitride crystal and method for making it

Номер: US20130119401A1
Автор: Derrick S. Kamber, Douglas W. Pocius, James S. Speck, Mark P. D'Evelyn
Принадлежит: Soraa Inc

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

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Номер записи: 32
18-07-2013 дата публикации

CRYSTAL GROWTH USING NON-THERMAL ATMOSPHERIC PRESSURE PLASMAS

Номер: US20130183225A1
Автор: Pimputkar Siddha, Speck James S., Von Dollen Paul
Принадлежит: The Regents of the University of California

A method and apparatus for bulk crystal growth using non-thermal atmospheric pressure plasmas. This method and apparatus pertains to growth of any compound crystal involving one or more crystal components in a liquid phase (also known as the melt or solution), in communication with a non-thermal atmospheric pressure plasma source comprised of one or more other crystal components. 1. A method for growing a compound crystal , comprising:growing a Group-III nitride crystal using a flux-based growth, wherein the flux-based growth includes:(1) a solution comprised of at least one Group-III metal contained within a vessel, wherein the solution and one or more surfaces of a seed upon which the Group-III nitride crystal is grown are brought into contact; and(2) a source of at least one component for the growth of the Group-III nitride crystal is a non-thermal atmospheric pressure plasma introduced to the vessel.2. The method of claim 1 , wherein the plasma is operated at a pressure between 0.5 atmospheres and 3 atmospheres.3. The method of claim 1 , wherein the non-thermal atmospheric pressure plasma is the source for nitrogen at atmospheric pressure.4. The method of claim 1 , wherein the non-thermal atmospheric pressure plasma is one or more directed streams in communication with the solution.5. The method of claim 1 , wherein the non-thermal atmospheric pressure plasma is incident above a surface of the solution.6. The method of claim 1 , wherein the non-thermal atmospheric pressure plasma is submerged within the solution.7. The method of claim 1 , wherein the non-thermal atmospheric pressure plasma is introduced within the solution by a conduit.8. The method of claim 7 , wherein the conduit includes pores that introduce only a portion of the non-thermal atmospheric pressure plasma to the Group-III nitride crystal's growth interface.9. The method of claim 7 , wherein the non-thermal atmospheric pressure plasma's interaction with the solution is modulated by altering the ...

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Номер записи: 33
25-07-2013 дата публикации

GaN Whiskers and Methods of Growing Them from Solution

Номер: US20130186326A1
Автор: Boris N. Feigelson, Charles R. Eddy, Jr., Francis J. Kub, Jennifer K. Hite
Принадлежит: US Department of Navy

Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.

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Номер записи: 34
22-08-2013 дата публикации

Method for Manufacturing Optical Element

Номер: US20130214325A1
Автор: Kazuya Takada, Toru Kinoshita
Принадлежит: Tokuyama Corp

A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.

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Номер записи: 35
29-08-2013 дата публикации

ELECTROMAGNETIC MIXING FOR NITRIDE CRYSTAL GROWTH

Номер: US20130224100A1
Автор: Von Dollen Paul
Принадлежит: The Regents of the University of California

A method and apparatus for bulk Group-III nitride crystal growth through inductive stirring in a sodium flux growth technique. A helical electromagnetic coil is closely wound around a non-conducting cylindrical crucible containing a conductive crystal growth solution, including both precursor gallium and sodium, wherein a nitrogen-containing atmosphere can be maintained at any pressure. A seed crystal is introduced with the crystal's growth interface submerged slightly below the solution's surface. Electrical contact is made to the coil and an AC electrical field is applied at a specified frequency, in order to create eddy currents within the conductive crystal growth solution, resulting in a steady-state flux of solution impinging on the submerged crystal's growth interface. 1. A method for growing a compound crystal , comprising:growing a Group-III nitride crystal using a flux-based growth, wherein the flux-based growth includes a solution comprised of at least one Group-III metal contained within a reactor vessel, and the solution is mixed through inductive stirring using one or more electromagnetic fields.2. The method of claim 1 , wherein:the solution is a conductive solution,the reactor vessel includes a helical electromagnetic coil wound around a non-conducting crucible containing the conductive solution, andan electrical field at a specified frequency is applied to the helical electromagnetic coil to create the electromagenetic fields, in order to create currents within the conductive solution, resulting in a flux of the conductive solution impinging on the Group-III nitride crystal's growth interface.3. The method of claim 2 , wherein the electromagnetic fields are controlled to create a directed flow of the solution towards the Group-III nitride crystal's growth interface.4. The method of claim 2 , wherein the electromagnetic fields are controlled to vary the solution's flow velocity and direction during the Group-III nitride crystal's growth.5. The method ...

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Номер записи: 36
19-09-2013 дата публикации

Fabrication method and fabrication apparatus of group iii nitride crystal substance

Номер: US20130244406A1
Автор: Fumitaka Sato, Hideyuki Ijiri, Hitoshi Kasai, Kensaku Motoki, Koji Uematsu, Naoki Matsumoto, Ryu Hirota, Seiji Nakahata, Shunsuke Fujita, Takuji Okahisa
Принадлежит: Sumitomo Electric Industries Ltd

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

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Номер записи: 37
26-09-2013 дата публикации

Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate

Номер: US20130249060A1
Автор: Keiji Ishibashi
Принадлежит: Sumitomo Electric Industries Ltd

A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface.

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Номер записи: 38
03-10-2013 дата публикации

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

Номер: US20130260537A1
Автор: Hans Von Känel
Принадлежит: Sulzer Metco AG

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10̂-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

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Номер записи: 39
07-11-2013 дата публикации

METAL NITRIDES AND PROCESS FOR PRODUCTION THEREOF

Номер: US20130295363A1
Автор: TSUJI Hideto
Принадлежит:

A method for producing a metal nitride by employing a container made of a nonoxide material, wherein reaction or adhesion of a raw metal or metal nitride to be formed to the container can be avoided and inclusion of oxygen derived from the material of the container can be prevented; by securing a certain or larger supply amount and a certain or higher flow rate of the nitrogen source gas, the raw metal can be converted into a nitride with an extremely high conversion, and a metal nitride having a small amount of an unreacted raw metal remaining and containing a metal and nitrogen in a stoichiometric constant can be obtained with a high yield; a metal nitride having small amounts of unreacted raw metal remaining and oxygen included can be obtained with a high yield and is very useful as a raw material for bulk crystal growth. 1. A metal nitride containing a metal element of Group 13 of the Periodic Table , characterized by the metal nitride having an oxygen content of less than 0.07 wt % and a specific surface area of at most 0.5 m/g.2. The metal nitride according to claim 1 , which has a content of a zero valent metal element of less than 5 wt %.3. The metal nitride according to claim 1 , which contains nitrogen in an amount of at least 47 atomic %.4. The metal nitride according to claim 1 , which has a color tone claim 1 , wherein the color tone measured by a color difference meter is such that L is at least 60 claim 1 , “a” is at least −10 and at most 10 claim 1 , and “b” is at least −20 and at most 10.5. The metal nitride according to claim 1 , which has a maximum length of primary particles in a major axis direction of at least 0.05 μm and at most 1 mm.6. The metal nitride according to claim 1 , wherein the metal element of Group 13 of the Periodic Table is gallium.7. A metal nitride molded product claim 1 , which is pellets or a block obtained by molding the metal nitride as defined in .8. A method for producing metal nitride bulk crystals claim 1 , comprising ...

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Номер записи: 40
28-11-2013 дата публикации

GaN Epitaxy With Migration Enhancement and Surface Energy Modification

Номер: US20130313566A1
Автор: Boris BORISOV, Philip A. Kraus, Sandeep Nijhawan, Thai Cheng Chua, Yoga Saripalli
Принадлежит: Intermolecular Inc

Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

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Номер записи: 41
05-12-2013 дата публикации

PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT

Номер: US20130320242A1
Автор: Börner Frank, EICHLER Stefan, Kretzer Ulrich, Kropfgans Frieder
Принадлежит: FREIBERGER COMPOUND MATERIALS GMBH

A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×10′cmin the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared. 1. A gallium arsenide single crystal , comprising a charge carrier concentration of at least 1×10cmand at most 1×10cm , wherein an optical absorption coefficient of the gallium arsenide single crystal is at most 2.5 cmat a wavelength of 1000 nm , at most 1.8 cmat a wavelength of 1100 nm and at most 1.0 cmat a wavelength of 1200 nm , and wherein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm.2. A gallium arsenide single crystal comprising an electron concentration of at least 1×10cmand at most 1×10cm , wherein an optical absorption coefficient of the gallium arsenide single crystal is at most 2.0 cmat a wavelength of 1000 nm , at most 1.4 cmat a wavelength of 1100 nm and at most 0.8 cmat a wavelength of 1200 nm , and wherein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm.3. A gallium arsenide single crystal according to claim 1 , comprising a charge carrier concentration of at most 5×10cm.4. A gallium arsenide single crystal according to claim 1 , comprising an n-type conductivity claim 1 , wherein the charge carrier concentration corresponds to the electron concentration.5. A gallium arsenide single crystal according to claim 1 , comprising a boron content of at least 5×10cm.6. A gallium arsenide single crystal according to claim 1 , comprising a ...

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Номер записи: 42
05-12-2013 дата публикации

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES

Номер: US20130323490A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentraut Dirk, Kamber Derrick S.
Принадлежит:

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. 1. A gallium-containing nitride crystal , comprising:a crystalline substrate member having a length greater than about 5 millimeters;at least one large-area surface having a semipolar orientation, wherein the semipolar orientation is miscut from each of the m-plane orientation and the c-plane orientation by at least about 5 degrees; and{'sup': 16', '−3, 'an impurity concentration greater than about 10cmof at least one impurity selected from O, H, Li, Na, K, F, Cl, Br, I, Si, Ge, Cu, Mn, and Fe, wherein the at least one impurity has a distribution along a direction parallel at least one large-area surface of the crystal comprising at least 4 alternating bands of a higher impurity concentration and a lower impurity concentration of the at least one impurity, wherein the higher impurity concentration is between about 1.05 times higher than and about 40 times higher than the lower impurity concentration.'}2. The crystal of claim 1 , wherein the semipolar orientation is within about 3 degrees of one of {6 0 −6 ±1} claim 1 , {5 0 −5 ±1} claim 1 , {4 0 −4 ±1} claim 1 , {3 0 −3 ±1} claim 1 , {5 0 −5 ±2} claim 1 , {2 0 −2 ±1} claim 1 , {3 0 −3 ±2} claim 1 , {4 0 −4 ±3} claim 1 , and {5 0 −5 ±4}.3. The crystal of claim 1 , wherein the length is greater than about 25 millimeters.4. The crystal of claim 1 , wherein a dislocation density of at least one large-area surface is below about 10cm.5. The crystal of claim 1 , wherein a full width at half maximum of a symmetric x-ray rocking curve corresponding ...

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Номер записи: 43
12-12-2013 дата публикации

Temperature-controlled purge gate valve for chemical vapor deposition chamber

Номер: US20130327266A1
Автор: Chantal Arena, Christiaan Werkhoven
Принадлежит: Soitec SA

The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl 3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

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Номер записи: 44
19-12-2013 дата публикации

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

Номер: US20130333611A1
Автор: De Indranil, Machuca Francisco
Принадлежит: Tivra Corporation

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors. 1. A lattice matching layer for use in a multilayer substrate structure , the lattice matching layer including:a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; anda second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature,wherein a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.2. The lattice matching layer of claim 1 , wherein a linear ...

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Номер записи: 45
26-12-2013 дата публикации

Semiconductor Device

Номер: US20130341633A1
Автор: Makoto Kiyama, Shinsuke Fujiwara, Takashi Sakurada, Yusuke Yoshizumi
Принадлежит: Sumitomo Electric Industries Ltd

Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S t /S, of collective area S t cm 2 of inversion domains to the total area S cm 2 of the GaN substrate principal face, of no more than 0.5, with the density along the (0001) Ga face of inversion domains whose surface area is 1 μm 2 or more being D cm −2 ; and an at least single-lamina semiconductor layer on the GaN substrate principal face, the semiconductor layer defining a semiconductor-device principal face; wherein the product S c ×D of the area S c of the semiconductor-device principal face and the inversion domain density D is less than 2.3.

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Номер записи: 46
09-01-2014 дата публикации

Cubic boron nitride crystal, bodies comprising same and tools comprising same

Номер: US20140007520A1
Автор: Karolina HANNERSJÖ
Принадлежит: Element Six Ltd

A cubic boron nitride (cBN) crystal or plurality of crystals containing a chloride salt compound including an alkali metal or an alkali earth metal. For example, the chloride salt compound may be selected from potassium chloride, magnesium chloride, lithium chloride, calcium chloride or sodium chloride. The crystal or crystals may have a relatively rough surface texture.

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Номер записи: 47
30-01-2014 дата публикации

Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same

Номер: US20140026809A1
Автор: Higashihara Shuhei, Hirao Takayuki, Imai Katsuhiro, IWAI Makoto, Sakai Masahiro, Shimodaira Takanao
Принадлежит: NGK Insulators, Ltd.

A seed crystal substrate includes a supporting body , and a seed crystal film A formed on the supporting body and composed of a single crystal of a nitride of a Group 13 metal element. The seed crystal film A includes main body parts and thin parts having a thickness smaller than that of the main body parts . The main body parts and thin part are exposed to a surface of the seed crystal substrate . A nitride of a Group 13 metal element is grown on the seed crystal film A by flux method. 1. A method of producing a nitride of a Group 13 metal element by flux method using a seed crystal substrate , said seed crystal substrate comprising:a supporting body; anda seed crystal film formed on said supporting body and comprising a single crystal of a nitride of a Group 13 metal element;wherein said seed crystal film comprises main body parts and thin parts having a thickness smaller than that of said main body parts, andwherein said main body parts and said thin parts are exposed to a surface of said seed crystal substrate, the method comprising the step of growing said nitride of a Group 13 metal element on said seed crystal film by flux method.2. The method of claim 1 , wherein recesses are formed over said thin parts claim 1 , respectively claim 1 , on a surface of said seed crystal film claim 1 , and wherein steps are formed between said main body parts and said thin parts claim 1 , respectively.3. The method of claim 1 , wherein said thin parts have a thickness of 1.5 μm or smaller.4. The method of claim 1 , wherein said seed crystal substrate comprises a low temperature buffer layer provided between said seed crystal film and said supporting body claim 1 , said low temperature buffer layer comprising a nitride of a Group 13 metal element.5. The method of claim 1 , wherein chlorine and fluorine atoms are adsorbed on said thin parts.6. The method of claim 1 , wherein said nitride of a Group 13 metal element grown by flux method comprises gallium nitride.7. A seed crystal ...

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Номер записи: 48
30-01-2014 дата публикации

Semiconductor laminate and process for production thereof, and semiconductor element

Номер: US20140027770A1
Автор: Kazuyuki Iizuka, Shinkuro Sato, Yoshikatsu Morishima
Принадлежит: Koha Co Ltd, Tamura Corp

A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga 2 0 3 substrate; an AlGalnN buffer layer which is formed on the Ga 2 0 3 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×10 18 /cm 3 or more.

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Номер записи: 49
30-01-2014 дата публикации

GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL

Номер: US20140030549A1
Автор: Hatakeyama Takeshi, Hiranaka Kouichi, Kawamura Fumio, Kitaoka Yasuo, Minemoto Hisashi, Mori Yusuke, Sasaki Takamoto, YAMADA Osamu
Принадлежит: RICOH COMPANY, LTD.

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. 112-. (canceled)13. A group-III element nitride crystal comprising at least one dopant selected from the group consisting of Si , O , Ge , Sn , Mg , Sr , Ea , Zn and Ca , the group-III element nitride crystal having an optical absorption coefficient of 10 cmor less with respect to light having a wavelength of 400 nm or more and 620 nm or less.14. The group-III element nitride crystal according to claim 13 , whereinthe group-III element is at least one element selected from AI, Ga and In, and{'sub': '(1-s-t)', 'the group-III element nitride is a compound represented by AlsGatlnN, where 0≦s≦1, 0≦t≦1, and s+t≦1.'}15. The group-III element nitride crystal according to claim 14 , whereinthe group-III element is Ga, andthe group-III element nitride is GaN.16. A substrate for forming a semiconductor device including a group-III element nitride crystal claim 14 , wherein{'claim-ref': {'@idref': 'CLM-00013', 'claim 13'}, 'the group-III element nitride crystal is the group-III element nitride crystal according to .'}17. A semiconductor device claim 14 , whereina semiconductor layer is formed on a substrate, and{'claim-ref': {'@idref': 'CLM-00016', 'claim 16'}, 'the substrate is the ...

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Номер записи: 50
13-02-2014 дата публикации

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE

Номер: US20140044970A1
Автор: Hirokazu Iwata, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama
Принадлежит: Ricoh Co Ltd

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

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Номер записи: 51
06-03-2014 дата публикации

Method and apparatus for producing large, single-crystals of aluminum nitride

Номер: US20140061666A1
Автор: Glen A. Slack, Joseph A. Smart, Juan Carlos Rojo, Kenneth E. Morgan, Leo Schowalter, Robert T. Bondokov
Принадлежит: Crystal IS Inc

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm −2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

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Номер записи: 52
06-03-2014 дата публикации

Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making, and Method of Use

Номер: US20140065360A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentaut Dirk, JIANG Wenkan
Принадлежит: Soraa, Inc.

An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators. 1. An ultralow defect gallium-containing nitride crystal , wherein:the crystal comprises gallium and nitrogen and has a wurtzite crystal structure;the crystal comprises a first large area surface and a second large area surface, the second large area surface being on the opposite side of the crystal, and the first large area surface and the second large area surface being substantially parallel to one another and having a maximum dimension greater than about 10 millimeters; whereinthe first large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −60 degrees and about +60 degrees toward a [0001] +c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction; and{'sup': 4', '−2', '−1, 'sub': 3', '4', '3', '4', '2', '4, 'at least one of the first large area surface and the second large area surface is characterized by a dislocation density below about 10cmand by a stacking fault concentration below about 10 cm, as determined by etching, in a solution comprising one or more of HPO, HPOthat has been conditioned by prolonged heat treatment to form polyphosphoric acid, and HSO, at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours; wherein the temperature and the time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers.'}2. The crystal of claim 1 , wherein the second large-area surface comprises a crystallographic orientation that is miscut from a {10-10} m-plane by between about −60 degrees and about +60 degrees toward a [0001 ...

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Номер записи: 53
06-03-2014 дата публикации

Group iii nitride wafer and its production method

Номер: US20140065796A1
Автор: Edward Letts, Sierra HOFF, Tadao Hashimoto
Принадлежит: Seoul Semiconductor Co Ltd

The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

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Номер записи: 54
13-03-2014 дата публикации

Scintillator, method of fabricating the same and x-ray detector including the scintillator

Номер: US20140070105A1
Автор: Jang Won Moon, Kyung Soo Lee
Принадлежит: Samsung Display Co Ltd

A scintillator, which can prevent a data error due to light diffusion or spreading by improving light collimation, a method of fabricating the same and an X-ray detector including the scintillator are disclosed. The scintillator includes a substrate and a scintillator layer fanned on the substrate and having columnar crystals and non-columnar crystals, wherein each of the columnar crystals has an aspect ratio of 80:1 or greater.

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Номер записи: 55
13-03-2014 дата публикации

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Номер: US20140070370A1
Автор: Miki Moriyama, Shiro Yamazaki
Принадлежит: Toyoda Gosei Co Ltd

Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ω (rpm) satisfying the following conditions: ω1−4≦ω≦ω1+4; ω1=10 z ; and z=−0.78× log 10 ( R )+3.1.

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Номер записи: 56
27-03-2014 дата публикации

METHOD OF GROWING GROUP III NITRIDE CRYSTALS

Номер: US20140087113A1
Автор: HASHIMOTO Tadao, Hoff Sierra, LETTS Edward
Принадлежит:

The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. 2. A method according to claim 1 , wherein the crystal lattice orientation of the first claim 1 , second claim 1 , third claim 1 , and fourth group III nitride wafers is c-plane having a misorientation within +/−10 degrees claim 1 , and the first faces of the first claim 1 , second claim 1 , third claim 1 , and fourth group III nitride wafers face one another claim 1 , and the second faces of the first claim 1 , second claim 1 , third claim 1 , and fourth group III nitride wafers are nitrogen polar surfaces.3. A method according to claim 1 , wherein the first and second group III nitride crystals are grown simultaneously in supercritical ammonia.4. A method according to claim 1 , wherein an adhesive layer is inserted between the first layer and the second layer to adhere the layers together.5. A method according to claim 4 , wherein the adhesive layer is metallic.6. A method according to claim 5 , wherein the metal comprises gallium or indium.7. A method according to claim 1 , wherein the first and second layers composed of the group III nitride wafers are attached together by applying pressure.8. A method according to claim 1 , wherein the first layer has a long edge claim 1 , and wherein the long edge of the first layer is aligned to a-plane of the first wafer and the second wafer claim 1 , with misorientation within +/−10 degree.9. A method according to claim 1 , wherein the second layer has a long edge claim 1 , and wherein the long edge of the second layer is aligned ...

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Номер записи: 57
27-03-2014 дата публикации

METHOD OF GROWING GROUP III NITRIDE CRYSTALS

Номер: US20140087209A1
Автор: HASHIMOTO Tadao, Hoff Sierra, LETTS Edward
Принадлежит:

The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. 1. A method of making a group III nitride composed of GaAlInN (0≦x≦1 , 0≦x+y≦1) comprising(a) growing a first group III nitride crystal on a first face and growing a second group III nitride crystal on a second face of a first-generation seed to form a first ingot of group III nitride;(b) slicing the first ingot into a first, second, and third wafer;wherein the first wafer includes the first-generation seed, and the first wafer has a thickness greater than a thickness of each of the second wafer and the third wafer, and wherein the thickness of the first wafer containing the first-generation seed is large enough to avoid breaking of the first wafer.2. A method according to and further comprising growing a third group III nitride crystal on a first face of said first wafer and a fourth group III nitride crystal on a second face of said first wafer.3. A method according to claim 2 , wherein cracks exposed on the surface of the first wafer including the first-generation seed are buried during the next growth.4. A method according to claim 1 , wherein both surfaces of the first wafer which includes the first-generation seed are covered with group III nitride crystals grown on the first-generation seed.5. A method according to claim 4 , wherein the group III nitride crystals are grown in supercritical ammonia.6. A method according to claim 1 , wherein the ingot is sliced into wafers with a multiple wire saw having a different wire pitch for the wafer which includes the first- ...

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Номер записи: 58
03-04-2014 дата публикации

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Номер: US20140093671A1
Автор: Bondokov Robert, Morgan Kenneth E., Schowalter Leo J., Slack Glen A.
Принадлежит:

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138.-. (canceled)39. An AlN single crystal having at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 ,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 ,500 nm.40. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm.41. The AlN single crystal of claim 40 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 40 ,500 nm.42. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.43. The AlN single crystal of claim 39 , wherein the AlN single crystal has a microvoid density less than approximately 10cm.44. The AlN single crystal of claim 39 , wherein the AlN single crystal is substantially crack-free.45. The AlN single crystal of claim 39 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c-face and an Al polarity.46. The AlN single crystal of claim 40 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c ...

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Номер записи: 59
03-04-2014 дата публикации

Method for making epitaxial structure

Номер: US20140094022A1
Автор: Shou-Shan Fan, Yang Wei
Принадлежит: Hon Hai Precision Industry Co Ltd, TSINGHUA UNIVERSITY

A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed.

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Номер записи: 60
01-01-2015 дата публикации

GROWTH SUBSTRATE AND LIGHT EMITTING DEVICE COMPRISING THE SAME

Номер: US20150001556A1
Автор: Kim Hyunggu, YU Hyosang, YUH Hwankuk
Принадлежит:

A growth substrate including a substrate having a growth surface including a plurality of steps inclining in a first direction; a first layer disposed on the growth surface, the first layer including an A-plane or an M-plane in an upper part thereof, a plurality of protrusions having an inclined surface on an upper surface thereof, and nitride; a mask layer including a dielectric material and having at least a portion disposed on the protrusions; and a second layer disposed on the mask layer and including nitride. 1. A growth substrate comprising:a substrate having a growth surface including a plurality of steps inclining in a first direction; an A-plane or an M-plane in an upper part thereof,', 'a plurality of protrusions having an inclined surface on an upper surface thereof, and', 'nitride;, 'a first layer disposed on the growth surface, the first layer includinga mask layer including a dielectric material and having at least a portion disposed on the protrusions; anda second layer disposed on the mask layer and including nitride.2. The growth substrate according to claim 1 , wherein a width of an inclination direction of the steps of the substrate are uniform.3. The growth substrate according to claim 1 , wherein the substrate includes a material having a hexagonal system claim 1 , andwherein a virtual line connecting ends of the steps of the substrate forms an angle of inclination in a positive (+) direction from an R plane of the substrate.4. The growth substrate according to claim 3 , wherein the angle formed by the virtual line and the R plane of the substrate is 0.2° to 0.4°.5. The growth substrate according to claim 1 , wherein the mask layer and the second layer form an air void between each other.6. The growth substrate according to claim 1 , wherein the upper surface of the first layer and an upper surface of the second layer have an identical crystal plane.7. The growth substrate according to claim 1 , wherein the mask layer comprises at least one of a ...

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Номер записи: 61
06-01-2022 дата публикации

METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

Номер: US20220002904A1
Автор: IMANISHI Masayuki, KITAMOTO Akira, Mori Yusuke, Okayama Yoshio, SUMI Tomoaki, TAKINO Junichi, Yoshimura Masashi
Принадлежит:

A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and growing the group III nitride crystal on the seed substrate. 1. A method of manufacturing a group III nitride crystal comprising:preparing a seed substrate;generating a group III element oxide gas;supplying the group III element oxide gas;supplying a nitrogen element-containing gas;{'sub': 2', '2', '2', '4, 'supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and'}growing the group III nitride crystal on the seed substrate.2. The method of manufacturing a group III nitride crystal according to claim 1 , further comprising:reacting the oxidizing gas containing nitrogen element with a group III element droplet.3. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.00×10atm or more and 1.75×10atm or less.4. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied at a partial pressure of 7.60×10atm or more and 1.30×10atm or less.5. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied before the seed substrate reaches a substrate maximum achieving temperature.6. The method of manufacturing a group III nitride crystal according to claim 1 , wherein the oxidizing gas containing nitrogen element is supplied before the seed substrate reaches the substrate temperature of 1050° C. This ...

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Номер записи: 62
02-01-2020 дата публикации

CHALCOGEN-CONTAINING COMPOUND, ITS PREPARATION METHOD AND THERMOELECTRIC ELEMENT COMPRISING THE SAME

Номер: US20200002168A1
Автор: JUNG Myung Jin, KIM Min Kyoung, KO Kyung Moon, MIN Yu Ho, PARK Chee Sung, PARK Cheol Hee
Принадлежит: LG CHEM, LTD.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: MVSnSbTe, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0 Подробнее

Номер записи: 63
05-01-2017 дата публикации

PREPARATION OF NANORODS

Номер: US20170002266A1
Автор: Bawendi Moungi G., COROPCEANU Igor
Принадлежит: Massachusetts Institute of Technology

A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core. 1. A method of preparing a core-shell nanorod comprising growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution to a suspension of M1X1 nanocrystals , wherein the core-shell nanorod includes a M1X1 core.2. The method of claim 1 , wherein the core nanocrystal includes CdSe.3. The method of claim 1 , wherein the shell includes CdS.4. The method of claim 1 , wherein the solution includes an acid.5. The method of claim 1 , wherein the solution includes an amine.6. The method of claim 1 , further including degassing the solution.7. The method of claim 1 , further including growing the core-shell nanorod at a temperature of no higher than 310° C.8. The method of claim 1 , wherein the slow-injection rate of M2 precursor is less than 0.4 mmol per hour.9. The method of claim 1 , wherein the slow-injection rate of X2 precursor is less than 0.4mmol per hour.10. The method of claim 1 , wherein the M2 precursor solution includes 1-octadecene.11. The method of claim 1 , wherein the X2 precursor solution includes 1-octadecene.12. The method of claim 1 , wherein concentration of the M2 precursor is between 0.05 M-0.20 M.13. The method of claim 1 , wherein concentration of the X2 precursor is between 0.07 M-0.30 M. This application claims priority to U.S. Provisional Application No. 62/188,177, filed Jul. 2, 2015, which is incorporated by reference in its entirety.Nanostructures frequently exhibit properties different from the corresponding bulk material. Changes in properties can be influenced by shape and size of the nanostructure. This is especially true for nanostructures having large aspect ratios, such as nanorods, which can differ quite ...

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Номер записи: 64
07-01-2016 дата публикации

High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal

Номер: US20160002817A1
Автор: Edward Letts, Masanori Ikari, Tadao Hashimoto
Принадлежит: SixPoint Materials Inc

Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

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Номер записи: 65
07-01-2016 дата публикации

Crystal growth apparatus and manufacturing method of group iii nitride crystal

Номер: US20160002818A1
Автор: Akihiro Fuse, Hirokazu Iwata, Seiji Sarayama
Принадлежит: Akihiro Fuse, Hirokazu Iwata, Seiji Sarayama

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

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Номер записи: 66
07-01-2016 дата публикации

Production of Free-Standing Crystalline Material Layers

Номер: US20160002822A1
Автор: Molnar Richard J.
Принадлежит: Massachusetts Institute of Technology

Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness. 1. A growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry , comprising:a host substrate;a separation layer disposed on the host substrate for growth of a layer of the crystalline material on the separation layer, the separation layer having a separation layer thickness, and the separation layer being mechanically weaker than the host substrate and the crystalline material layer; andan array of apertures disposed in the separation layer, each aperture in the array extending through the separation layer thickness, the array of apertures having an array symmetry that matches a crystallographic symmetry of the crystalline material.2. The growth structure of further comprising a growth template layer disposed on the host substrate under the separation layer and exposed in the apertures of the separation layer claim 1 , wherein the growth template layer comprises a compositional component of the crystalline material.3. The growth structure of further comprising a layer of the crystalline material disposed on the separation layer.4. The growth structure of wherein the crystalline material is monocrystalline.5. The growth structure of wherein the crystalline material layer comprises a crystalline III-V semiconducting material.6. The growth structure of wherein growth template layer comprises GaN claim 2 , and further comprising a crystalline material layer of GaN ...

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Номер записи: 67
02-01-2020 дата публикации

REACTION DEVICE FOR HORIZONTAL BOAT PRODUCTION METHOD

Номер: US20200002834A1
Автор: LEI RENGUI, TAN XIAOTIAN, XIAO YADONG
Принадлежит:

The present disclosure provides a reaction device for a horizontal boat production method. The device comprises a closed reaction tube, and a horizontal boat container, wherein the horizontal boat container include a plurality of first-layer horizontal boat containers and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers. 1. A reaction device for horizontal boat production method , comprising: a closed reaction tube , and a horizontal boat container ,wherein the horizontal boat container includes a plurality of first-layer horizontal boat containers disposed at different positions in the reaction tube in a horizontal direction, at least one of the first-layer horizontal boat containers is provided with a bracket device on which a second-layer horizontal boat container is superposed, wherein the bracket device is configured to support the second-layer horizontal boat container and provides a gap between the first-layer horizontal boat container and the second-layer horizontal boat container.2. The reaction device according to claim 1 , wherein the bracket device is separately provided.3. The reaction device according to claim 1 , wherein the bracket device is integrated with the horizontal boat container.4. The reaction device according to claim 3 , wherein the bracket device is integrated with an upper portion of the first-layer horizontal boat container or a lower portion of the second-layer horizontal boat container.5. The reaction device according to claim 1 , wherein the horizontal boat container includes a main body portion disposed substantially at a central portion of the horizontal boat container claim 1 , the main body portion having a generally U-shaped cross section.6. The reaction device according to claim 1 , wherein the bracket device is a bridge member claim 1 , two ends of the bridge member are respectively snapped on two sidewalls of the horizontal boat ...

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Номер записи: 68
02-01-2020 дата публикации

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Номер: US20200002841A1
Автор: Bondokov Robert T., Gibb Shawn Robert, Morgan Kenneth, Rao Shailaja P., Schowalter Leo J., Slack Glen A.
Принадлежит:

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate. 138.-. (canceled)39. A bulk single crystal of AlN having a thickness greater than 0.1 mm and exhibiting a triple-crystal X-ray rocking curve of less than 50 arcsec full width at half maximum (FWHM) for a (0002) reflection.40. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 1 mm.41. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 5 mm.42. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤10 cm.43. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤1 cm.44. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.45. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.46. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 25 mm.47. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 50 mm.48. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at most 1 mm.49. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is at least 1 cmand at most 100 cm.50. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is at least 10cmand at most 10cm.51. The bulk single ...

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Номер записи: 69
02-01-2020 дата публикации

METHOD OF FEEDING GASES INTO A REACTOR TO GROW EPITAXIAL STRUCTURES BASED ON GROUP III NITRIDE METALS AND A DEVICE FOR CARRYING OUT SAID METHOD

Номер: US20200002842A1
Автор: "ZAVARIN Evgenii Evgenevich", BAZAREVSKII Denis Stanislavovich, IAKOVLEV Evgenii Viadimirovich, LUNDIN Vsevolod Vladimirovich, TALALAEV Roman Aleksandrovich, TSATSULNIKOV Andrey Fedorovich
Принадлежит:

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions. 1. A method of delivering gas into a rector for epitaxial growth of group III nitrides , comprising delivering into a reactor of at least two reactive gas flows , at least one of which is mixed with a carrier gas , using trimethylaluminum , trimethylindium , trimethylgallium , triethylgallium , and their mixtures as a reactive gas—a source of group III metals , and using ammonia as a reactive gas—a source of nitrogen , wherein the gas flows before injection into a reactor are directed to at least one connected with a reactor mixing chamber for formation of gas mixture , and then gas mixture is delivered into a reactor via flow former shaped for laminar flow conditions promotion , and the walls of mixing chamber and flow former are heated and kept at temperature of 40÷400° C. , and the internal volume of the ...

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Номер записи: 70
02-01-2020 дата публикации

SEMICONDUCTOR SYNTHESIZING DEVICE AND METHOD

Номер: US20200002844A1
Автор: LEI RENGUI, TAN XIAOTIAN, XIAO YADONG
Принадлежит:

A semiconductor synthesizing device comprises a closed reaction tube, a first furnace body and a second furnace body. The reaction tube is arranged with a plurality of horizontal boat containers which include a plurality of first-layer horizontal boat containers and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers. The bracket device is configured to support the second-layer horizontal boat container and provides a gap between the first-layer horizontal boat container and the second-layer horizontal boat container. 1. A semiconductor synthesizing device applied in the Horizontal Bridgman method , comprising a closed reaction tube , a first furnace body , and a second furnace body ,wherein the first furnace body and the second furnace body are connected via an intermediate pipe, the reaction tube is placed in a furnace chamber jointly defined by the first furnace body, the intermediate pipe and the second furnace body, and a temperature control device is provided corresponding to the first furnace body and the second furnace body separately and respectively,wherein the reaction tube is arranged with a plurality of horizontal boat containers which include a plurality of first-layer horizontal boat containers disposed at different positions in the reaction tube in a horizontal direction, and a second-layer horizontal boat container superposed on a bracket device provided on at least one of the first-layer horizontal boat containers, and wherein the bracket device is configured to support the second-layer horizontal boat container and provide a gap between the first-layer horizontal boat containers and the second-layer horizontal boat container.2. The semiconductor synthesizing device according to claim 1 , wherein an outer periphery of the intermediate pipe is covered by a thermal insulating material.3. The semiconductor synthesizing device according to claim 2 , wherein an ...

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Номер записи: 71
01-01-2015 дата публикации

METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES

Номер: US20150004435A1
Автор: CHANG Li, HO YEN-TENG
Принадлежит:

The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. 1. A method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate , comprising the following steps:providing a single crystal oxide with a perovskite structure;using a plane of the single crystal oxide as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein the non-polar m-plane epitaxial layer is III-nitrides.2. The method as claimed in claim 1 , further comprising the following steps:forming an oxide layer on the single crystal oxide;using a plane of the oxide layer as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein, the compositions of the oxide layer and the single crystal oxide are the same or different.3. The method as claimed in claim 1 , wherein the lattice mismatch between the substrate and the non-polar m-plane epitaxial layer is 10% or less.4. The method as claimed in claim 1 , wherein the single crystal oxide is LaAlO claim 1 , SrTiO claim 1 , (La claim 1 , Sr)(Al claim 1 , Ta)O claim 1 , or an LaAlOalloy with a lattice constant difference of 10% or less compared to LaAlO.5. The method as claimed in claim 1 , wherein the III nitride is gallium nitride claim 1 , indium nitride claim 1 , aluminum nitride claim 1 , indium gallium nitride ...

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Номер записи: 72
07-01-2021 дата публикации

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

Номер: US20210002785A1
Автор: Erwin Schmitt, Michael Vogel
Принадлежит: SiCrystal GmbH

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

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Номер записи: 73
03-01-2019 дата публикации

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GALLIUM NITRIDE BOULES

Номер: US20190003078A1
Автор: "DEvelyn Mark P.", DOWNEY BRADLEY C., Ehrentraut Dirk, Kamber Derrick S.
Принадлежит:

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. 1. A method of forming a boule used to form one or more single crystal substrates , comprising performing a crystal growth process on one or more seed crystals to form one or more boules , whereinthe one or more seed crystals each have a first crystallographic orientation on a first surface, formed on the first surface of or within each of the one or more seed crystals; or', 'formed between two or more tiled crystals that form a mosaic of tiled crystals,, 'the first surface of each of the one or more seed crystals includes parallel features that aregrowth facets form during the crystal growth process between the parallel features having a second crystallographic orientation and a third crystallographic orientation, andwherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation.1. The method of claim 1 , wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing claim 1 , dry etching claim 1 , reactive ion etching claim 1 , wet etching claim 1 , laser scribing claim 1 , or grinding.2. The method of claim 2 , wherein the grooves have a depth between about one micrometer and about one millimeter and a width between about ten micrometers and about one millimeter.4. The method of claim 1 , wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals claim 1 , ...

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Номер записи: 74
13-01-2022 дата публикации

GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER

Номер: US20220010455A1
Автор: Iso Kenji
Принадлежит: MITSUBISHI CHEMICAL CORPORATION

The present invention is aimed at providing: a GaN substrate wafer having an improved productivity, which can be preferably used for the production of a nitride semiconductor device in which a device structure is arranged on a GaN substrate having a carrier concentration increased by doping; and a method of producing the same. Provided is a (0001)-oriented GaN wafer which includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In this GaN wafer, the second region has a minimum thickness of 20 μm to 300 μm, and contains a region having a higher donor impurity total concentration than the first region. In the second region, a region within a specific length from a main surface of the Ga-polar side of the GaN substrate wafer is defined as a main doped region, and the second region may be doped such that at least the main doped region has a donor impurity total concentration of 1×10atoms/cmor higher. 1. A (0001)-oriented GaN substrate wafer , comprising a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween ,wherein the second region has a minimum thickness of 20 μm to 300 μm, and comprises a region having a higher donor impurity total concentration than the first region.2. The GaN substrate wafer according to claim 1 , wherein at least a portion of the region having a higher donor impurity total concentration than the first region has a carrier concentration of 1×10cmor higher.3. The GaN substrate wafer according to claim 1 , satisfying any condition selected from the following (1) to (3):(1) having a diameter of 50 mm to 55 mm and a thickness of 250 μm to 450 μm;(2) having a diameter of 100 nm to 105 mm and thickness of 350 μm to 750 μm; and(3) having a diameter of 150 mm to 155 mm and a thickness of 450 μm to 800 μm.4. The GaN substrate wafer according to claim 1 , wherein the second region comprises a main doped ...

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Номер записи: 75
05-01-2017 дата публикации

Reducing Autodoping of III-V Semiconductors By Atomic Layer Epitaxy (ALE)

Номер: US20170004969A1
Автор: Cohen Guy M., Lavoie Christian
Принадлежит:

In one aspect, a method for forming a doped III-V semiconductor material on a substrate includes the steps of: (a) forming a first monolayer on the substrate, wherein the first monolayer comprises at least one group III or at least one group V element; and (b) forming a doped second monolayer on a side of the first monolayer opposite the substrate, wherein the second monolayer comprises either i) at least one group V element if the first monolayer comprises at least one group III element, or ii) at least one group III element if the first monolayer comprises at least one group V element, wherein a dopant is selectively introduced only during formation of the second monolayer, and wherein steps (a) and (b) are performed using atomic layer epitaxy. Doped III-V semiconductor materials are also provided. 1. A method for forming a doped III-V semiconductor material on a substrate , the method comprising the steps of:(a) forming a first monolayer on the substrate, wherein the first monolayer comprises at least one group III or at least one group V element;(b) forming a doped second monolayer on a side of the first monolayer opposite the substrate, wherein the second monolayer comprises either i) at least one group V element if the first monolayer comprises at least one group III element, or ii) at least one group III element if the first monolayer comprises at least one group V element, wherein a dopant is selectively introduced only during formation of the second monolayer, and wherein steps (a) and (b) are performed using atomic layer epitaxy.2. The method of claim 1 , wherein the substrate comprises an indium phosphide substrate.3. The method of claim 1 , wherein the step (a) comprises the steps of:contacting the substrate with at least one group III or at least one group V element vapor phase epitaxy source under conditions sufficient to form the first monolayer on the substrate; andpurging any remaining reactants.4. The method of claim 3 , wherein the conditions ...

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Номер записи: 76
13-01-2022 дата публикации

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

Номер: US20220013687A1
Автор: Okuno Koji
Принадлежит:

The present invention provides a method for producing a Group III nitride semiconductor device which can relax strain between a Group III nitride semiconductor layer containing In and a semiconductor layer adjacent thereto, and a production method therefor. The well layer is a Group III nitride semiconductor layer containing In. The barrier layer is a Group III nitride semiconductor layer. The well layer and the barrier layer are brought into contact with each other in at least one of growing a well layer and growing a barrier layer. A gas containing hydrogen gas as a carrier gas is used in growing a well layer and growing a barrier layer. In growing a barrier layer, the flow rate of hydrogen gas is higher than the flow rate of hydrogen gas in growing a well layer. 1. A method for producing a Group III nitride semiconductor device , the method comprising:growing a first semiconductor layer; andgrowing a second semiconductor layer, whereinthe first semiconductor layer is a Group III nitride semiconductor layer containing In,the second semiconductor layer is a Group III nitride semiconductor layer,the second semiconductor layer has a band gap larger than a band gap of the first semiconductor layer, anda flow rate of hydrogen gas used as a carrier gas in growing a second semiconductor layer is larger than a flow rate of hydrogen gas in growing a first semiconductor layer.2. The method for producing a Group III nitride semiconductor device according to claim 1 , wherein the flow rate of the hydrogen gas is linearly increased or decreased at least one of an initial stage and a final stage of the growth of the second semiconductor layer.3. The method for producing a Group III nitride semiconductor device according to claim 1 , wherein a mixture gas of hydrogen gas and nitrogen gas is used as a carrier gas in growing a first semiconductor layer and the second semiconductor layer.4. The method for producing a Group III nitride semiconductor device according to claim 1 , ...

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Номер записи: 77
04-01-2018 дата публикации

MANUFACTURE OF GROUP IIIA-NITRIDE LAYERS ON SEMICONDUCTOR ON INSULATOR STRUCTURES

Номер: US20180005815A1
Автор: Seacrist Michael R., Wang Gang
Принадлежит:

A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. 1. A method of forming a multilayer structure , the method comprising:forming a pattern comprising a plurality of mesa islands on a semiconductor-on-insulator structure, wherein the semiconductor-on-insulator structure comprises a single crystal semiconductor handle wafer, a dielectric layer in interfacial contact with the single crystal semiconductor handle wafer, and a single crystal semiconductor device layer in interfacial contact with the dielectric layer, and further wherein the pattern comprising the plurality of mesa islands is formed in the single crystal semiconductor device layer; andforming a Group IIIA-nitride layer on the plurality of mesa islands.2. The method of wherein the single crystal semiconductor handle wafer comprises two major claim 1 , generally parallel surfaces claim 1 , one of which is a front surface of the single crystal semiconductor handle wafer and the other of which is a back surface of the single crystal semiconductor handle wafer claim 1 , a circumferential edge joining the front and back surfaces of the single crystal semiconductor handle wafer claim 1 , a bulk region between the front and back surfaces claim 1 , and a central plane of the single crystal semiconductor handle wafer between the front and back surfaces of the single crystal semiconductor handle wafer.3. The method of wherein the single crystal semiconductor handle wafer comprises a semiconductor material selected from the group consisting of silicon claim 1 , silicon carbide claim 1 , sapphire claim 1 , and aluminum nitride.4. (canceled)5. The method of wherein the dielectric ...

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Номер записи: 78
04-01-2018 дата публикации

MULTI-DEPOSITION PROCESS FOR HIGH QUALITY GALLIUM NITRIDE DEVICE MANUFACTURING

Номер: US20180005827A1
Автор: BASCERI CEM, Odnoblyudov Vladimir
Принадлежит: Quora Technology, Inc.

A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer. 1. A group III-nitride (III-N)-based electronic device comprising:an engineered substrate;a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate; anda hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.2. The III-N-based electronic device of further comprising:a second MOCVD III-N-based epitaxial layer coupled to the HVPE III-N-based epitaxial layer; anda second HVPE III-N-based epitaxial layer coupled to the second MOCVD based epitaxial layer.3. The III-N-based electronic device of wherein a combined thickness of the MOCVD III-N-based epitaxial layer and the HVPE III-N-based epitaxial layer is greater than 10 μm.4. The III-N-based electronic device of further comprising a silicon layer disposed between the engineered substrate and the MOCVD III-N-based epitaxial layer.5. The III-N-based electronic device of wherein the silicon layer comprises a single crystal silicon layer.6. The III-N-based electronic device of wherein:the MOCVD III-N-based epitaxial layer comprises at least AlN, GaN, or AlGaN; andthe HVPE III-N-based epitaxial layer comprises at least AlN, GaN, or AlGaN.7. A method of fabricating a epitaxial structure claim 1 , the method comprising:providing an engineered substrate;growing a first epitaxial layer coupled to the engineered substrate using a first deposition process; andgrowing a second epitaxial layer coupled to the first epitaxial layer using a second deposition process.8. The method of further comprising:growing a third epitaxial layer coupled to the second epitaxial layer using the first deposition process; andgrowing a fourth epitaxial ...

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Номер записи: 79
04-01-2018 дата публикации

METHOD FOR MAKING NANO-HETEROSTRUCTURE

Номер: US20180006227A1
Автор: FAN SHOU-SHAN, JIANG KAI-LI, WEI YANG, ZHANG Jin
Принадлежит:

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure. 1. A method for making a nano-heterostructure comprising:{'b': '1', 'S: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes;'}{'b': '2', 'S: forming a semiconductor layer on the first carbon nanotube layer;'}{'b': '3', 'S: covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes;'}{'b': '4', 'S: finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer;'}{'b': '5', 'S: removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes except for the first carbon nanotube and the second carbon nanotube to form a multilayer structure; and'}{'b': '6', 'S: annealing the multilayer structure.'}21. The method of claim 1 , wherein in step S claim 1 , a method for forming the first carbon nanotube layer on the support is a transfer method.3. The method of claim 2 , wherein the transfer method comprises the following steps:growing the first carbon ...

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Номер записи: 80
04-01-2018 дата публикации

NANO-HETEROSTRUCTURE

Номер: US20180006231A1
Автор: FAN SHOU-SHAN, JIANG KAI-LI, WEI YANG, ZHANG Jin
Принадлежит:

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure. 1. A nano-heterostructure comprising:a first carbon nanotube oriented along a first direction;a semiconductor layer with a thickness ranging from 1 nanometer to 200 nanometers, and the semiconductor layer comprising a first surface and a second surface opposite to the first surface;a second carbon nanotube oriented along a second direction;wherein the first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface, the semiconductor layer is sandwiched between the first carbon nanotube and the second carbon nanotube, and the first carbon nanotube and the second carbon nanotube are crossed with each other.2. The nano-heterostructure of claim 1 , wherein the first carbon nanotube is a metallic carbon nanotube.3. The nano-heterostructure of claim 2 , wherein the first carbon nanotube is a single-walled carbon nanotube.4. The nano-heterostructure of claim 1 , wherein the second carbon nanotube is a metallic carbon nanotube.5. The nano-heterostructure of claim 4 , wherein the second carbon nanotube is a single-walled carbon nanotube.6. The nano-heterostructure of claim 1 , wherein a diameter of the first carbon nanotube ranges from 1 ...

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Номер записи: 81
04-01-2018 дата публикации

NANO-SCALE TRANSISTOR

Номер: US20180006252A1
Автор: FAN SHOU-SHAN, JIANG KAI-LI, WEI YANG, ZHANG Jin
Принадлежит:

The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface. 1. A nano-scale transistor comprising: a first carbon nanotube oriented along a first direction;', 'a semiconductor layer with a thickness ranging from 1 nanometer to 200 nanometers, and the semiconductor layer comprising a first surface and a second surface opposite to the first surface;', 'a second carbon nanotube oriented along a second direction; and', 'wherein the first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface, the semiconductor layer is sandwiched between the first carbon nanotube and the second carbon nanotube, and the first carbon nanotube and the second carbon nanotube are crossed with each other., 'a source electrode, a drain electrode, a gate electrode, and a nano-heterostructure; the nano-heterostructure being electrically coupled with the source electrode and the drain electrode, the gate electrode being insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer; and, the nano-heterostructure comprises2. The nano-scale transistor of claim 1 , wherein the source electrode is located at one end of the first carbon nanotube and adhered on a surface of the first carbon nanotube.3. The nano-scale transistor of ...

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Номер записи: 82
04-01-2018 дата публикации

LIGHT DETECTOR

Номер: US20180006255A1
Автор: FAN SHOU-SHAN, JIANG KAI-LI, WEI YANG, ZHANG Jin
Принадлежит:

The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface. 1. A light detector comprising: a semiconductor layer with a thickness ranging from 1 nanometer to 100 nanometers, and the semiconductor layer comprising a first surface and a second surface;', 'a first carbon nanotube located on the first surface and arranged along a first direction; and', 'a second carbon nanotube located on the second surface and arranged along a second direction different from the first direction, and the second carbon nanotube being crossed with the first carbon nanotube., 'a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure; the nano-heterostructure being electrically coupled with the first electrode and the second electrode, wherein a circuit is formed by the first electrode, the second electrode, the current detector, the power source and the nano-heterostructure; and the nano-heterostructure comprises2. The light detector of claim 1 , wherein the first electrode is located at one end of the first carbon nanotube and adhered on a surface of the first carbon nanotube.3. The light detector of claim 1 , wherein the second electrode is located at one end of the second carbon nanotube and adhered on a surface of the second carbon nanotube.4. The light detector of claim 1 , wherein the first carbon nanotube is a metallic carbon nanotube.5. The light detector of claim 4 , wherein the first carbon ...

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Номер записи: 83
03-01-2019 дата публикации

ENCAPSULATED SUBSTRATE, MANUFACTURING METHOD, HIGH BAND-GAP DEVICE HAVING ENCAPSULATED SUBSTRATE

Номер: US20190006177A1
Автор: Liu Po-Yen, Sung Kao-Mei, Wang Hsiao-Lei
Принадлежит:

An encapsulated substrate includes a zinc oxide substrate and a composite barrier layer. The composite barrier layer includes a first film layer having a first material different from zinc oxide, a second film layer covered on a surface of the first film layer and having a second material different from the zinc oxide and the first material, and an active layer formed on the composite barrier layer and corresponding to an acting surface of a zinc oxide substrate and having an acting material different from the zinc oxide. 1. An encapsulated substrate , comprising:a zinc oxide substrate comprising at least one acting surface and being a zinc oxide material having a standard lattice structure of a wurtzite lattice structure; anda composite barrier layer having a thickness greater than 1 nanometer and being surroundingly covered on the zinc oxide substrate, comprising a first film layer which has a thickness greater than 0.1 nanometer and is directly covered and formed on the zinc oxide substrate comprises a first material different from zinc oxide and is provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite lattice structure; a second film layer which has a thickness greater than 0.1 nanometer and is directly covered and formed on a surface of the first film layer comprises a second material different from the zinc oxide and the first material and is provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite lattice structure; a plurality of accumulating film layers sequentially formed on the second film layer and each of which being different from the adjacent accumulating film layer and/or the second film layer and provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite ...

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Номер записи: 84
03-01-2019 дата публикации

MONODISPERSE, IR-ABSORBING NANOPARTICLES AND RELATED METHODS AND DEVICES

Номер: US20190006541A1
Автор: Kim Do Young, LEE Woong Jae, Pradhan Bhabendra K., So Franky
Принадлежит:

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold 1. A device , comprising:a layer comprising a plurality of nanocrystals, wherein the plurality of nanocrystals has a mean maximum cross-sectional dimension of about 2 nm or more with a relative standard deviation of about 10% or less, wherein the plurality of nanocrystals is capable of absorbing electromagnetic radiation having a wavelength of at least about 700 nm.2. The device of any preceding claim , wherein at least a portion of the plurality of nanocrystals are quantum dots.3. The device of any preceding claim , wherein at least a portion of the plurality of nanocrystals comprise PbS and/or PbSe.4. The device of any preceding claim , wherein substantially all of the nanocrystals comprise PbS and/or PbSe.5. The device of any preceding claim , wherein the relative standard deviation is about 5% or less.6. The device of any preceding claim , wherein the relative standard deviation is about 1% or less.7. The device of any preceding claim , ...

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Номер записи: 85
03-01-2019 дата публикации

Semiconductor Structure with Annealing

Номер: US20190006553A1
Автор: Jain Rakesh, Shatalov Maxim S.
Принадлежит: SENSOR ELECTRONIC TECHNOLOGY, INC.

Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures. 1. A method , comprising:obtaining a substrate;epitaxially growing a nucleation layer on the substrate, the nucleation layer including a group III nitride semiconductor layer;{'b': '1', 'epitaxially growing a buffer layer directly on the nucleation layer, the buffer layer grown at a first temperature T;'}{'b': 2', '2', '1, 'annealing the epitaxially grown buffer layer and the nucleation layer at a second temperature T, wherein the second temperature T is greater than the first temperature T; and'}epitaxially growing an n-type doped semiconductor layer over the annealed buffer layer.2. A method of epitaxially growing a semiconductor structure with low dislocation density , comprising:obtaining a substrate;epitaxially growing a nucleation layer on the substrate, the nucleation layer including a group III nitride semiconductor layer;{'b': '1', 'epitaxially growing a buffer layer on the nucleation layer at a first temperature T, the buffer layer including a group III nitride semiconductor layer;'}epitaxially growing a desorption minimizing layer on the buffer layer;{'b': 2', '2', '1, 'annealing the nucleation layer, the buffer layer and the desorption minimizing layer at a second temperature T, wherein the ...

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Номер записи: 86
08-01-2015 дата публикации

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Номер: US20150008563A1
Автор: Hideaki Nakahata, Keisuke Tanizaki, Koji Uematsu, Michimasa Miyanaga, Naho Mizuhara, Seiji Nakahata, Takuji Okahisa
Принадлежит: Sumitomo Electric Industries Ltd

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a <0001> direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a <0001> direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

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Номер записи: 87
12-01-2017 дата публикации

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

Номер: US20170009378A1
Автор: Abe Yukio, Kitamura Toshio, SHIBATA Masatomo, Yoshida Takehiro
Принадлежит:

A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis. 1. A method for manufacturing a semiconductor substrate , comprising:epitaxially growing a columnar group III nitride semiconductor single crystal on a principal plane of a circular substrate;removing a hollow cylindrical region at an outer peripheral edge side of the group III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the group III nitride semiconductor single crystal; andslicing the solid columnar region after removing the hollow cylindrical region, wherein the removing of the hollow cylindrical region is carried out such that a shape of the group III nitride semiconductor single crystal always keeps an axial symmetry that a central axis of the semiconductor crystal is defined as a symmetry axis.2. The method according to claim 1 , wherein the hollow cylindrical region comprises a region that has a concentration of an impurity that is different from that in the solid columnar region.3. The method according to claim 1 , wherein the hollow cylindrical region comprises a region formed by a crystal growth using a plane that has a different orientation from an orientation in an upper surface of the solid columnar region as a growth interface in the epitaxial ...

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Номер записи: 88
14-01-2016 дата публикации

METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSEL

Номер: US20160010238A1
Автор: HASHIMOTO Tadao, IKARI Masanori, LETTS Edward
Принадлежит:

Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. 1. A method for growing group III nitride crystals in an ammonothermal method and in a manner that exposes an alkali-metal mineralizer to minimal oxygen and moisture comprising:a. placing at least one group III-nitride seed crystal in a crystallization region of a high-pressure vessel;b. placing a group III-containing nutrient in the high-pressure vessel;c. placing an airtight container into the high-pressure vessel, wherein the airtight container comprises mineralizer and a metal covering which protects the mineralizer from water and oxygen;{'sup': '−5', 'd. reducing pressure to less than 1×10mbar after placing the airtight container into the high-pressure vessel;'}e. filling the high-pressure vessel with ammonia;f. releasing the mineralizer into the ammonia surrounding the metal covering;g. maintaining (i) a temperature of the crystallization region above 500° C. and (ii) a pressure sufficiently high that the ammonia is supercritical for a sufficient time to grow a group III-nitride crystal on said seed crystal.2. The method of wherein the airtight container was formed by pouring molten mineralizer into the metal covering and solidifying the mineralizer within the covering.3. The method of wherein the metal covering is sealed with a metal foil seal.4. The method of wherein the airtight container consists essentially of the mineralizer claim 3 , the metal foil seal claim 3 , and the metal covering.5. The method of wherein the metal covering and the metal foil seal are each formed of a metal that is stable in supercritical ammonia.6. The method of wherein the mineralizer is sodium and the group III nitride is GaN.7. The method of wherein the act of releasing the mineralizer comprises rupturing a metal foil seal on said covering so that the mineralizer exits the covering and dissolves in ...

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Номер записи: 89
11-01-2018 дата публикации

GROWTH CONTAINER

Номер: US20180010262A1
Автор: HAGI Yoshiaki, KAWASE Tomohiro, SAKURADA Takashi
Принадлежит:

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film () on the inner wall of a growth container () having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film () into contact with boron oxide melt containing silicon oxide to form a boron oxide film () containing silicon oxide on the inner wall of the growth container (); forming raw material melt () above seed crystal () placed in and on the bottom section of the growth container (); and solidifying the raw material melt () from the seed crystal () side to grow a semiconductor single crystal. 118-. (canceled)19. A growth container comprising:a bottom section;a body section continuous to the bottom section; anda boron oxide film formed on an inner wall of the bottom section and the body section,the boron film containing a silicon dioxide,a concentration of the silicon dioxide in the boron oxide film being greater than or equal to 1 mol % and less than or equal to 12 mol %.20. The growth container according to claim 19 , whereinthe growth is made of boron nitride, pyrolytic boron nitride, pyrolytic graphite, graphite, glassy carbon, silicon carbide, alumina, zirconia, silicon nitride, or quartz. The present invention relates to a method of producing a semiconductor single crystal. Particularly, the present invention relates to a method of producing a semiconductor single crystal having the generation of a defect in the semiconductor single crystal suppressed.As a method of growing a semiconductor single crystal such as the III-V group compound semiconductor single crystal including GaAs, GaP, GaSb, InP, InAs, and InSb as well as the II-VI group compound semiconductor single crystal including CdTe, CdMnTe, CdZnTe, HgCdTe, ZnSe, ZnSSe and the like, various growing methods have been conventionally proposed.Typical methods ...

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Номер записи: 90
14-01-2021 дата публикации

WAFER CARRIER AND METHOD

Номер: US20210010159A1
Автор: Choi Chankyung, Kim Peter, Tungare Mihir, Wan Jianwei
Принадлежит:

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face. 1. A wafer carrier , comprising:a pocket sized and shaped to accommodate a wafer, the pocket comprising a base and a substantially circular perimeter; anda removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face,wherein the removable orientation marker further comprises a notch at a first end of the flat face.2. The wafer carrier of claim 1 , wherein the inner surface extends into a first arcuate surface at the first end of the flat face and into a second arcuate surface at a second end of the flat face claim 1 , the second end opposing the first end claim 1 , the flat face forming a chord with the first arcuate surface and the second arcuate surface.3. The wafer carrier of claim 1 , wherein the removable orientation member further comprises an additional notch arranged at a second end of the flat face claim 1 , the second end opposing the first end.4. The wafer carrier of claim 1 , wherein an arcuate section of the substantially circular perimeter comprises a depression sized and shaped to accommodate the removable orientation marker.5. The wafer carrier of claim 4 , wherein the arcuate section of the substantially circular perimeter further comprises first engaging means for engaging with the removable orientation marker.6. ...

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Номер записи: 91
10-01-2019 дата публикации

METHOD FOR PRODUCING GaN CRYSTAL

Номер: US20190010605A1
Автор: Akinori Koukitu, Hisashi Murakami, Kenji Iso
Принадлежит: Mitsubishi Chemical Corp, Tokyo University of Agriculture and Technology NUC

The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCl3 and NH3 as raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85° or more and less than 170° with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCl3 and NH3 as raw materials.

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Номер записи: 92
27-01-2022 дата публикации

METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL

Номер: US20220028683A1
Автор: THOMAS Simon Charles Stewart
Принадлежит: Paragraf Ltd.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm. 1. A method of producing a two-dimensional crystalline material , the method comprising:providing a substrate having nucleation sites within a reaction chamber;introducing at a precursor entry point a precursor into the reaction chamber, the precursor being in a gas phase and/or suspended in a gas;heating the substrate to a temperature that is within a decomposition range of the precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; andcooling the precursor entry point;wherein the reaction chamber is a close coupled reaction chamber such that a separation between the substrate surface upon which the two-dimensional crystalline material is formed and the point at which the precursor enters the reaction chamber is sufficiently small, and a thermal gradient between the substrate surface and the point at which the precursor enters the chamber is sufficiently steep, such that the fraction of precursor that reacts in the gas phase within the reaction chamber is low enough to ...

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Номер записи: 93
09-01-2020 дата публикации

Two-stage seeded growth of large aluminum nitride single crystals

Номер: US20200010975A1
Автор: James R. Grandusky, Leo J. Schowalter, Robert T. Bondokov
Принадлежит: Crystal IS Inc

In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

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Номер записи: 94
15-01-2015 дата публикации

CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS

Номер: US20150013588A1
Автор: MOFFATT STEPHEN
Принадлежит:

A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. 1. A method of treating a substrate , comprising:identifying a first treatment zone;forming a molten area of the first treatment zone by exposing a surface of the first treatment zone to a first laser pulse, wherein the first laser pulse has a non-uniformity of less than about 5 percent;recrystallizing the molten area of the first treatment zone while exposing the first treatment zone to a plurality of laser pulses;identifying a second treatment zone; andrepeating the forming a molten area and the recrystallizing the molten area with the second treatment zone.2. The method of claim 1 , wherein the forming a molten area of each treatment zone further comprises exposing the surface of each treatment zone to a second laser pulse claim 1 , and a duration between the first laser pulse and the second laser pulse is less than a time necessary for a portion of the molten area to refreeze.3. The method of claim 2 , wherein the first laser pulse and the second laser pulse have the same duration and intensity.4. The method of claim 1 , wherein each pulse of the plurality of laser pulses has the same duration and intensity as the first laser pulse.5. The method of claim 1 , wherein each pulse of the plurality of laser pulses has a duration or an intensity that is different from the first laser pulse.6. The method of claim 1 , wherein the second treatment zone and the first treatment zone share a boundary.7. The method of claim 5 , wherein the ...

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Номер записи: 95
15-01-2015 дата публикации

METHOD OF MAKING QUANTUM DOTS

Номер: US20150013589A1
Автор: Breen Craig, Liu Wenhao
Принадлежит: QD VISION, INC.

Quantum dots and methods of making quantum dots are provided. 1. A method for making quantum dots comprising:combining quantum dot precursors in a liquid medium at a reaction temperature to form a reaction mixture;quenching the reaction mixture to arrest nucleation, growth and ripening thereby resulting in quantum dots; andcombining the quantum dots with additional quantum dot precursors under conditions suitable to increase the size of the quantum dots.2. A method in accordance with wherein the quantum dot precursors include a first quantum dot precursor comprising an X donor wherein X comprises oxygen claim 1 , sulfur claim 1 , selenium claim 1 , tellurium claim 1 , nitrogen claim 1 , phosphorus claim 1 , arsenic claim 1 , or antimony.3. A method in accordance with wherein the quantum dot precursors include a second quantum dot precursor comprising a metal claim 1 , wherein the metal comprises cadmium claim 1 , zinc claim 1 , magnesium claim 1 , mercury claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , thallium claim 1 , lead or germanium.4. A method in accordance with wherein the solution further includes carboxylate species.5. A method in accordance with wherein the solution further includes a phosphonate species.6. A method in accordance with wherein the solution further includes a phosphonite species.7. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of combining the quantum dot precursors.8. A method in accordance with wherein the step of quenching includes rapidly cooling the reaction mixture immediately upon completion of combining the quantum dot precursors and prior to ripening.9. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 200° C. or below.10. A method in accordance with wherein the reaction mixture is cooled to a temperature that is about 100° C. or below and further comprising isolating the quantum dots ...

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Номер записи: 96
15-01-2015 дата публикации

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Номер: US20150013592A1
Автор: Bondokov Robert T., Morgan Kenneth E., Schowalter Leo J., Slack Glen A.
Принадлежит:

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate. 117.-. (canceled)18. A method for growing single-crystal aluminum nitride (AlN) , the method comprising:providing a backing plate sized and shaped to receive an AlN seed;disposing an AlN seed and a substantially impervious foil on the backing plate with the foil between the AlN seed and the backing plate; anddepositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.19. The method of claim 18 , wherein the foil is substantially impervious to aluminum transport.20. The method of claim 19 , wherein the foil is substantially impervious to nitrogen.21. The method of claim 18 , wherein the foil is substantially impervious to nitrogen.22. The method of claim 18 , wherein the backing plate is substantially impervious to aluminum transport.23. The method of claim 18 , wherein a surface of the AlN seed facing the backing plate has a total thickness variance of less than 5 μm.24. The method of claim 18 , wherein a surface of the AlN seed facing the backing plate has a root mean square roughness less than 1 nm in a 10 μm×10 μm square area.25. The method of claim 18 , wherein providing the backing plate comprises exposing the backing plate to an Al vapor.26. The method of claim 18 , wherein the backing plate comprises multiple layers of grains claim 18 , at least some of which are swollen to inhibit diffusion therebetween.27. The method of claim 18 , wherein the backing plate consists essentially of a polycrystalline material.28. The method of claim 18 , wherein the backing plate is ...

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Номер записи: 97
15-01-2015 дата публикации

VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

Номер: US20150013594A1
Автор: SATO Yuusuke, Yamada Takumi
Принадлежит: NuFlare Technology, Inc.

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a first gas supply path configured to supply a first process gas including organic metal and a carrier gas into the reaction chamber; a second gas supply path configured to supply a second process gas including ammonia into the reaction chamber; a first carrier gas supply path configured to supply a first carrier gas of a hydrogen or inert gas into the first gas supply path while being connected to the first gas supply path and including a first mass flow controller; and a second carrier gas supply path configured to supply a second carrier gas of a hydrogen or inert gas different from the first carrier gas into the first gas supply path while being connected to the first gas supply path and including a second mass flow controller. 1. A vapor phase growth apparatus comprising:a reaction chamber;a first gas supply path connected to the reaction chamber, the first gas supply path configured to supply a first process gas including organic metal and a carrier gas into the reaction chamber;a second gas supply path connected to the reaction chamber, the second gas supply path configured to supply a second process gas including ammonia into the reaction chamber;a first carrier gas supply path connected to the first gas supply path, the first carrier gas supply path having a first mass flow controller, the first carrier gas supply path configured to supply a first carrier gas of a hydrogen or inert gas into the first gas supply path; anda second carrier gas supply path connected to the first gas supply path, the second carrier gas supply path having a second mass flow controller, the second carrier gas supply path configured to supply a second carrier gas of a hydrogen or inert gas different from the first carrier gas into the first gas supply path.2. The vapor phase growth apparatus according to claim 1 , further comprising:a first compensation gas supply path connected to the second gas supply ...

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Номер записи: 98
15-01-2015 дата публикации

METHOD OF MAKING QUANTUM DOTS

Номер: US20150014586A1
Автор: Breen Craig, Liu Wenhao
Принадлежит: QD VISION, INC.

Quantum dots and methods of making quantum dots are provided. 1. A method for making quantum dots comprising:combining one or more highly reactive chalcogenide precursors, one or more highly reactive metal precursors, and a seed stabilizing agent at a reaction temperature to form a reaction mixture where the ratio of metal to chalcogenide is in a range from about 1:1 to about 1:0.5, andquenching the reaction mixture resulting in quantum dots.25-. (canceled)6. A method in accordance with wherein a metal precursor comprises a metal carboxylate.7. A method in accordance with wherein a metal precursor comprises cadmium oleate (Cd(Oleate)).8. A method in accordance with wherein the seed stabilizing agent comprises a phosphonic acid.9. A method in accordance with wherein the seed stabilizing agent is octadecylphosphonic acid.10. A method in accordance with wherein the reaction temperature is sufficient to form the quantum dots.11. A method in accordance with wherein quenching comprises dropping the temperature to a temperature sufficiently low to prevent nucleation and Ostwald ripening.12. A method in accordance with wherein quenching comprises dropping the temperature to a temperature sufficiently low to prevent nucleation and Ostwald ripening claim 1 , but is sufficiently high for a subsequent growth of the quantum dot.13. A method in accordance with wherein the quantum dots comprise CdSe and the reaction temperature is about 270° C.14. A method in accordance with wherein the step of quenching the reaction mixture is accomplished by rapid addition of a non-coordinating solvent to the reaction mixture sufficient to lower the reaction mixture temperature to a quenching temperature.15. A method in accordance with wherein the non-coordinating solvent is 1-octadecene.16. A method in accordance with wherein the quenching temperature is in a range from about 200 to about 240° C.17. (canceled)18. A method in accordance with wherein a highly reactive chalcogenide precursor ...

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Номер записи: 99
11-01-2018 дата публикации

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES

Номер: US20180013035A1
Автор: Baker Troy J., Chakraborty Arpan, DenBaars Steven P., Farrell, Haskell Benjamin A., JR. Robert M., Mishra Umesh K., Nakamura Shuji, Pattison P. Morgan, Sharma Rajat, Speck James S.
Принадлежит:

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface. 1. A light emitting device configured as a laser device , comprising:a semipolar III-nitride film including a light emitting device structure, wherein:the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, the surface oriented at a crystal angle θ from a c-plane of the nitride substrate, wherein 75°≦θ<90°; andan edge configured on the light emitting device structure for emission of light.2. The device of claim 1 , wherein the semipolar III-nitride film comprises a gallium and nitrogen material.3. The device of claim 1 , wherein the semipolar III-nitride active region is grown on or above a semipolar surface of the substrate comprising a free-standing gallium nitride (GaN) substrate claim 1 , the semipolar surface having a {20-21} orientation or offcut thereof.4. The device of claim 1 , wherein the light emitting device structure comprises a green light emitting semipolar diode.5. The device of claim 1 , wherein:a material property of the semipolar III-nitride active region is such that the device emits light in response to a drive current density of 278 Amps per centimeter square, andthe drive current density is direct current density.6. The device of ...

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Номер записи: 100