СПОСОБ И УСТАНОВКА ДЛЯ ЭПИТАКСИАЛЬНОГО ВЫРАЩИВАНИЯ ПОЛУПРОВОДНИКОВ ТИПА III-V, УСТРОЙСТВО ГЕНЕРАЦИИ НИЗКОТЕМПЕРАТУРНОЙ ПЛАЗМЫ ВЫСОКОЙ ПЛОТНОСТИ, ЭПИТАКСИАЛЬНЫЙ СЛОЙ НИТРИДА МЕТАЛЛА, ЭПИТАКСИАЛЬНАЯ ГЕТЕРОСТРУКТУРА НИТРИДА МЕТАЛЛА И ПОЛУПРОВОДНИК

Изобретение относится к установкам и способам эпитаксиального выращивания монокристаллов осаждением из паровой или газовой фазы. Сущность изобретения: вакуумная установка для эпитаксиального выращивания полупроводников типа III-V содержит вакуумную камеру, в которой поддерживается давление от приблизительно 10-3 мбар до 1 мбар во время эпитаксиального выращивания, размещенный в вакуумной камере подложкодержатель, установленный с возможностью закрепления и нагрева подложек, источники испарения веществ и ввода частиц пара в вакуумную камеру, которые являются частицами металлов в элементной форме, металлических сплавов и легирующих примесей, систему ввода и распределения газов в вакуумную камеру, источник подачи плазмы в вакуумную камеру, генератор магнитного поля для создания магнитного поля, позволяющего придать требуемую форму плазме в вакуумной камере. Вакуумная камера выполнена с возможностью осуществления в ней диффузного распространения частиц газов и паров металлов, активизации газов ...

СПОСОБ ЭПИТАКСИАЛЬНОГО ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ НИТРИДОВ МЕТАЛЛОВ 3А ГРУППЫ ХИМИЧЕСКИХ ЭЛЕМЕНТОВ

Использование: способы выращивания монокристаллических полупроводников для электронной промышленности, в частности промышленное производство объемных монокристалллов нитридов металлов, принадлежащих к ЗА группе химических элементов, и нитридов переменного состава на их основе. Сущность изобретения: способ эпитаксиального выращивания монокристалла нитрида по меньшей мере одного металла, принадлежащего к подгруппе "А" третьей группы химических элементов, из паровой фазы включает размещение параллельно друг напротив друга испаряющей поверхности источника металла, задаваемого в составе выращиваемого монокристалла, и ростовой поверхности подложки, образующих ростовую зону, создание в ростовой зоне потока аммиака, нагрев источника и подложки до температур, обеспечивающих рост монокристалла на подложке, поддерживая температуру источника выше температуры подложки. При этом согласно изобретению в качестве материала источника используют смесь, содержащую металлический компонент, включающий по меньшей ...

УСТРОЙСТВО ДЛЯ ПРОИЗВОДСТВА МОНОКРИСТАЛЛИЧЕСКОГО НИТРИДА АЛЮМИНИЯ, СПОСОБ ПРОИЗВОДСТВА МОНОКРИСТАЛЛИЧЕСКОГО НИТРИДА АЛЮМИНИЯ И МОНОКРИСТАЛЛИЧЕСКИЙ НИТРИД АЛЮМИНИЯ

Изобретение относится к технологии получения монокристаллического нитрида алюминия, который входит в состав светоизлучающих диодов и лазерных элементов. Устройство включает тигель 9, во внутренней части которого находится исходный нитрид алюминия 11 и затравочный кристалл 12, помещенный таким образом, чтобы находиться напротив исходного нитрида алюминия, при этом тигель 9 состоит из внутреннего тигля 2 с исходным нитридом алюминия 11 и затравочным кристаллом 12 внутри себя, причем внутренний тигель является коррозионностойким к сублимационному газу исходного нитрида алюминия и содержит единый корпус из металла, имеющего ионный радиус, превышающий ионный радиус алюминия, или содержит нитрид металла; и из внешнего тигля 4, изготовленного из нитрида бора, который покрывает внутренний тигель 2. Тигель 9 может дополнительно содержать графитовый тигель 6, покрывающий внешний тигель 4. Изобретение позволяет получать нитрид алюминия высокого уровня чистоты (с концентрацией углерода не более 10 ...

Verfahren zur Herstellung eines SrTiO 3 -YBa 2 Cu 3 O 7 -Schichtsystems und Schichtsystem aus SrTiO 3 und YBa 2 Cu 3 O 7

Dünnfilmsupraleiter und Herstellungsmethode

VORRICHTUNG UND VERFAHREN ZUM ZUECHTEN VON KRISTALLEN AUS II-VI- ODER III-V-VERBINDUNGEN

Verfahren zum Herstellen einer rotationsinduzierten Übergitterstruktur

Organische dünne Schicht durch regulierbare Molekularepitaxie.

Einrichtung zur Molekularstrahlepitaxie.

Verfahren zur Herstellung einer einkristalliner Schicht

VERFAHREN ZUR SYNTHESE EINER VERBINDUNG DER FORMEL M sb n+1 /sb AX sb n /sb, FILM AUS DER VERBINDUNG UND VERWENDUNG DAVON

Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat

Verfahren zur Herstellung mindestens eines semiisolierenden zur Herstellung von Halbleiter- und/oder Hochfrequenzbauelementen bestimmten SiC-Volumeneinkristalls (2; 33) mit einem spezifischen elektrischen Widerstand von mindestens 10Ωcm, wobeia) in mindestens einem Kristallwachstumsbereich (5; 36) eines Züchtungstiegels (3; 34) eine SiC-Wachstumsgasphase (9; 38) erzeugt wird und der SiC-Volumeneinkristall (2; 33) mittels Abscheidung aus der SiC-Wachstumsgasphase (9; 38) aufwächst,b) die SiC-Wachstumsgasphase (9; 38) aus einem SiC-Quellmaterial (6; 31), das sich in einem SiC-Vorratsbereich (4; 35) innerhalb des Züchtungstiegels (3; 34) befindet, gespeist wird, wobei ein Materialtransport von dem SiC-Vorratsbereich (4; 35) zu einer Wachstumsgrenzfläche (16; 39) des aufwachsenden SiC-Volumeneinkristalls (2; 33) stattfindet,c) dem Kristallwachstumsbereich (5; 36) Vanadium als ein Dotierstoff des aufwachsenden SiC-Volumeneinkristalls (2; 33) zugeführt wird,d) an der Wachstumsgrenzfläche (16; ...

VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT NITRIDZUSAMMENSETZUNG DER GRUPPE III

VERFAHREN ZUM EPITAKTISCHEN AUFWACHSEN VON HALBLEITERMATERIAL AUF EINE EINKRISTALLINE HALBLEITERUNTERLAGE

Improvements relating to methods of growing crystals

... 943,877. Crystallizing. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. April 9, 1962 [April 12, 1961], No. 13173/61. Heading BIG. A charge of suitable material 8 is vaporized and diffuses, assisted by the gas flow from source 4, to the cooled end 5. The fibre supported on cradle 7 is positioned, preferably when stable conditions exist in the tube, so that crystals grow on the fibre. The fibre may be initially located in the heated part of the tube to prevent premature crystallization.

Epitaxial growth method of III-nitride semiconductors

Improvements in and relating to semi-conductor devices

... 1,065,092. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Aug. 23, 1963 [Aug. 27, 1962], No. 33467/63. Heading H1K. In the manufacture of a semi-conductor device a low resistivity and a high resistivity layer are epitaxially grown sequentially on a low resistivity substrate. The layers and substrate are of the same conductivity type and the process is such that any disturbed region arising from commencement of the growth of the first layer lies mainly within that layer and that no further disturbance is produced when the second layer is grown. In a typical case a wafer of 0À002 ohm. cm. P-type silicon or germanium is provided with P-type layers in this way, details of the epitaxial growth procedure being given. The resulting body may constitute the collector region of a transistor of which the emitter and base regions and contacts are formed by alloying two lead-antimony pellets to the second layer, and subsequently adding aluminium to the emitter pellet and realloying ...

MULTILAYERED STRUCTURES

Molecular beam epitaxy apparatus and method

Molecular beam epitaxy apparatus for forming an epitaxial deposit of, for example, GaN on a substrate S, has a vacuum chamber 10 containing a heated support 12 for the substrate S. The chamber 10 is fitted with an exhaust conduit 16 connected with an ultra high vacuum pump 14, and with a first supply conduit 20 for ammonia. The inner end of the exhaust conduit 16 defines a vacuum outlet 18 of the chamber 10, whilst the first supply conduit 20 has an outlet 22 opening into the chamber 10. The outlet 22 and the vacuum outlet 18 are disposed adjacent the substrate S so that a high concentration of ammonia in the region of the substrate S can be achieved whilst still maintaining a high vacuum in the chamber 10. The outlet 22 of the first supply conduit 20 is disposed nearer to the substrate S than those of conventionally positioned effusion cells 24 and 26 defining second and further supply conduits respectively for gallium and another species to be supplied to the vacuum chamber 10.

A method of growing a magnesium-doped nitride semiconductor material

A method of growing a magnesium-doped nitride semiconductor material by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a magnesium-doped nitride semiconductor material over the substrate. Magnesium is supplied to the growth chamber at a beam equivalent pressure of at least 1 x 10-9 mbar, and preferably in the range from 1 x 10-9 mbar to 1 x 10-7 mbar during the growth process. The substrate temperature during the growth process is preferably between 850{C and 1050{C. This provides p-type GaN that has a high concentration of free charge carriers and eliminates the need to activate the magnesium dopant atoms by annealing or irradiating the material.

Process for production of ultrathin protective overcoats

Control of uniformity of growing alloy film

PCT No. PCT/AU86/00221 Sec. 371 Date Apr. 7, 1987 Sec. 102(e) Date Apr. 7, 1987 PCT Filed Aug. 6, 1986 PCT Pub. No. WO87/00966 PCT Pub. Date Feb. 12, 1987.A method and apparatus for the control of growth of epitaxial alloy films onto a substrate. A uniformity measurement probe (5-6) scans the growing film and controls a corrector gun (9) directing a corrector beam (8) to the film. The probe (5-6) and gun (9) are correlated to determine the relevant characteristics of a point on the growing film and to apply a particular correction. Possible deposition alloys are cadmium, mercury and tellurium with the corrector beam being selected from one or more of these specie.

A bulk, free-standing cubic III-N substrate and a method for forming same

Method of preparing monocrystalline layers

... A monocrystalline layer of a semi-conductor is vapour deposited on a substrate such as quartz or rock salt, through an adjustable aperture such as an iris diaphragm, placed between the source and the substrate, so that the initial deposit is in the form of a punctiform speck and the aperture is then enlarged to give the required area of deposit. The coating materials are Si, Ge, or other substances of Group 4 of the Periodic Table and the intermetallic compounds Aiii Bv, Aii Bvi, Ai Bvii. Doping materials such as phosphorus and boron may also be evaporated either separately or together with the semi-conductor materials. As shown in the drawing an iris diaphragm 6 is placed between a source rod 1 and a carrier 4 heated by heater 5, the diaphragm being closed at the start so that the carrier can be outgassed and the initial vapour which may be contaminated is deposited on the diaphragm. The carrier 4 is heated to below the melting temperature of the coating material and ...

PROCESS FOR THE PRODUCTION OF A COARSELY CRYSTALLINE OR MONOCRYSTALLINE METAL LAYER ON A SUBSTRATE

For the preparation of coarsely crystalline or monocrystalline metal layers by vapour deposition or atomisation of a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminium alloy or a Ti-V alloy with a V content of >70 atom% is first deposited on a substrate cooled to a temperature below -90 DEG C. The amorphous layer is then recrystallized by heating the substrate with the deposited metal layer to not more than 300 DEG C.

Method of growing a doped 111-V alloy laer by molecular beam epitaxy

A modified method of growing III-V alloy layers by a molecular beam process. Difficulties have been experienced using known molecular epitaxy processes for growing doped III-V alloy layers having satisfactory electrical and optical properties. The doped III-V alloy layer is grown by a molecular beam epitaxy process which has been modified so that growth proceeds through a surface containing from 5 to 20% of a monolayer of lead, a lead flux impinging on the growth surface together with fluxes of the constituent elements of the doped III-V alloy.

GALLIUM NITRIDE MATERIALEN AND PROCEEDING FOR THE PRODUCTION OF LAYERS THESE MATERIALEN

DEVICE FOR THE SEPARATION OF A THIN SECTION FROM A MATERIAL ON A SUBSTRATE AND REGENERATION PROCEDURE FOR SUCH A DEVICE

PROCEDURE FOR PULLING BETA-GA2O3 SINGLE CRYSTALS

PROCEDURE FOR THE PRODUCTION OF A EPITAKTISCH GROWN UP LAYER

P-ENDOWING ZINC OXIDE LAYERS AND MANUFACTURING PROCESS

MATERIAL EVAPORATION CHAMBER WITH DIFFERENTIAL VACCUM PUMP

HIGH IMPEDANCE SILICON CARBIDE AND PROCEDURE FOR ITS PRODUCTION

TRANSFORMATION FROM FULLERENEN TO DIAMOND

Photovoltaic cell comprising a photovoltaic active semiconductor material

System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000°C on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

PROCESS FOR THE DEPOSITION OF DIAMOND FILMS

Catio₃ interfacial template structure on superconductor

Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates

CRYSTALLINE SILICON HAVING (111)ORIENTATION ON (111) SURFACE OF LITHIUM ALUMIUM

METHOD OF GAS DOPING OF VACUUM EVAPORATED EPITAXIAL SILICON FILMS

PROCESS FOR THE PRODUCTION OF GAN OR AIGAN CRYSTALS

... ²² The invention concerns a process and an apparatus for the ²production of gallium nitride or gallium aluminium nitride single crystals. It ²²is essential for the process implementation according to the invention that ²the vaporisation of gallium or gallium and aluminium is effected at a ²temperature above the temperature of the growing crystal but at least at ²1000.degree.C and that a gas flow comprising nitrogen gas, hydrogen gas, inert ²²gas or a combination of said gases is passed over the surface of the metal ²melt in such a way that the gas flow over the surface of the metal melt ²prevents contact of the nitrogen precursor with the metal melt.² ...

SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE

An SiC ingot (10a) includes a bottom face (12a) having 4 sides; four side faces (12b, 12c, 12d, 12e) extending from the bottom face (12a) in a direction intersecting the direction of the bottom face (12a); and a growth face (12f) connected with the side faces (12b, 12c, 12d, 12e), located at a side opposite to the bottom face (12a). At least one of the bottom face (12a), the side faces (12b, 12c, 12d, 12e), and the growth face (12f) is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

APPARATUS FOR FORMING A GROUP II-VI OR GROUP III-V COMPOUND

AN IMPROVED APPARATUS FOR FORMING A GROUP II-VI OR GROUP III-V COMPOUND An improved apparatus for forming Group II-VI or Group III-V compounds is disclosed. The apparatus includes a high-pressure vessel. A reaction container, within the pressure vessel, holds elemental Group II or Group III material and elemental Group VI or Group V material, respectively. A heating means is provided for heating at least the Group VI or Group V material to volatilize the material. Capping the reaction container is a gaseous diffusion barrier which communicates the interior of the reaction container with the interior of the pressure vessel by means of a circuitous passageway contained therein. The diffusion barrier essentially prevents the diffusing out of gaseous Group VI or Group V element material from the reaction container to maintain the ambient therein constant with respect thereto at a fixed volatilization temperature without permitting a rupturing pressure gradient to establish across the walls ...

EQUILIBRIUM GROWTH TECHNIQUE FOR PREPARING PBS.SUB.XSE IN1-X XX EPILAYERS

EQUILIBRIUM GROWTH TECHNIQUE FOR PREPARING PbSxSe1-x EPILAYERS A high temperature method for the preparation of single and multiple eptaxial layers of single-phase lead sulfide-selenide, ¢Pb!a¢SxSe1-x!1-a between one and zero, inclusive, and a = 0.500 ? 0.003, deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical optical properties.

PROCESS FOR PRODUCING EXTREMELY FLAT MICROCRYSTALLINE DIAMOND THIN FILM BY LASER ABLATION METHOD

With respect to the conventional diamond thin film grown by the PLD method, the size of diamond crystal grains is on the order of 1 .mu.m and the film surface is uneven. There is provided a process for producing a diamond thin film by a laser ablation method, comprising heating a substrate at 450 to 650~C, creating a hydrogen atmosphere in a reaction chamber, setting laser energy for 100 mJ or more and providing a spacing of 15 to 25 mm between a target and the substrate so as to form a supersaturation of atomic hydrogen and carbon between the target and the substrate, and further comprising realizing a hydrogen atmosphere pressure sufficient to completely selectively etch off sp2 bond component (graphite component) from the sp2 bond component and sp3 bond component deposited on the substrate so as to effect growth of a single-phase superflat microcrystalline diamond thin film substantially not containing any non-diamond components.

EPITAXIAL OXIDE FILMS VIA NITRIDE CONVERSION

The present invention relates to oxide on suitable substrates, as converted from nitride precursors.

PHOTOVOLTAIC CELL COMPRISING A PHOTOVOLTAICALLY ACTIVE SEMICONDUCTOR MATERIAL

... ²²`The invention relates to a photovoltaic cell comprising a photovoltaically ²active ²semiconductor material, wherein the photovoltaically active semiconductor ²material is a p-²or n-doped semiconductor material comprising a binary compound of the formula ²(I) or a ²ternary compound of the formula (II):²² ZnTe (I) ²Zn 1-x Mn x Te (II) ²where x is from 0.01 to 0.99,²²and a particular proportion of tellurium ions in the photovoltaically active ²semiconductor ²material has been replaced by halogen ions and nitrogen ions and the halogen ²ions are ²selected from the group consisting of fluoride, chloride and bromide and ²mixtures thereof.² ...

ORDERED ORGANIC-ORGANIC MULTILAYER GROWTH

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within ± 50% of each other, and preferably within ± 15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

FILM DEPOSITING APPARATUS AND PROCESS FOR PREPARING LAYERED STRUCTURE INCLUDING OXIDE SUPERCONDUCTOR THIN FILM

The invention provides a film deposition apparatus comprising a vacuum chamber provided with a partitioning means for dividing the vacuum chamber into a first sub-chamber and a second sub-chamber, the partitioning means including an opening for introducing a vacuum conductance for molecular flows between the first sub-chamber and the second sub-chamber so that a pressure difference can be created between the first sub-chamber and the second sub-chamber even when the opening is open. A gate valve is provided on the partitioning means for hermetically closing the opening of the partitioning means so as to shut off the molecular flows between the first sub-chamber and the second sub-chamber. At least two evaporation source sets each comprising at least one K cell are provided in the vacuum chamber in communication with an internal space of the vacuum chamber and designed to deposit a thin film at different deposition positions in the second sub-chamber and a main evacuating means is coupled ...

SUBSTRATE HAVING A SUPERCONDUCTOR LAYER

A substrate having a superconducting thin film of compound oxide thereon. An intermediate layer consists of at least one layer of coppercontaining oxide is interposed between the substrate and the superconducting thin film.

TERNARY COMPOUND FILM AND MANUFACTURING METHOD THEREFOR

One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of a vacuum vapor deposition method or molecular beam epitaxial method to produce a ternary compound semiconductor material having a low vapor pressure, and the thus produced ternary compound semiconductor material is deposited on a substrate to form a ternary compound semiconductor thin film. Particularly, when a phosphor thin film for electroluminescence emitting blue light is to be grown, an element Sr and a binary compound Ga2S3 are respectively evaporated by the vacuum evaporation method or molecular beam epitaxial method to deposit a ternary compound semiconductor material SrGa2S4 on a substrate, and at the same time impurity element Ce forming luminescent center is evaporated such that the ternary compound semiconductor material SrGa2S4 ...

Ternary Compound Film and Manufacturing Method Thereof

GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER

A method of fabricating a gallium nitride or like epilayer on sapphire is disclosed wherein a buffer layer is grown on the sapphire substrate by magnetron sputter epita xy (MSE); and then the gallium nitride epilayer is formed on the buffer layer, preferably by molecular beam epitaxy.

Verfahren zum Herstellen einkristalliner Schichten

Scharnier für einen zweiteiligen Behälter

Halbleitervorrichtung und Verfahren zu deren Herstellung

Verfahren zum Herstellen dünner, stöchiometrischer CdSe-Schichten

Verfahren zum schichtweisen, kristallinen Niederschlagen hochreinen spröden Materials

Process for the preparation of coarsely crystalline and monocrystalline metal layers

PROCEDURE FOR THE PRODUCTION OF CRYSTALLINE PHOSPHORUS AND PRODUCT.

STABLE ONE, PHOSPHORUS ABSTENTION SOLID DEPOSITS, PROCEDURES FOR THEIR PRODUCTION AS WELL AS USES OF THE DEPOSITS MENTIONED.

PROCEDURE FOR THE PRODUCTION A HIGH OF A PHOSPHORHALTIGEN COATING, APPARATUS FOR THE EXECUTION OF THE COATING AND USE THE SAME.

Vacuum treatment plant.

Eine Vakuumbehandlungsanlage zum Behandeln von Werkstücken umfasst eine evakuierbare Behandlungskammer, in der eine Niedervoltbogen-Entladungsvorrichtung angeordnet ist, mindestens eine verschliessbare Be- und Entladeöffnung und mindestens eine an einer Seitenwand der Behandlungskammer angebrachte Beschichtungsquelle. Ferner weist sie eine Magnetfelderzeugungsvorrichtung zur Ausbildung eines magnetischen Fernfeldes sowie zumindest einen Werkstückträger zur Aufnahme von Werkstücken auf. Ferner ist eine Target-Shutteranordnung (8, 8´) so ausgebildet, dass im abgedeckten Zustand der Abstand zwischen Shutter (8) und Target (12) weniger als 35 mm beträgt und so das Zünden und Betreiben einer Magnetron- oder einer kathodischen Funkenentladung hinter dem Target ermöglicht, andererseits aber bei ausgeschaltetem Target (12) das Zünden eines Nebenplasmas verhindert wird.

METHOD OF PREPARING CRUCIBLE FOR GROWING SINGLE CRYSTALS OF SILICON CARBIDE

Method of depositing materials on a non-planar surface

PROCESS FOR the CRYSTAL GROWTH FOR OXIDE biSrCaCuO THIN FILMS

PROCEEDED FOR THE FORMATION BY GROWTH OF LAYERS IN GAAS OF THE TYPE NR BY EPITAXY BEAM HAS MOLECULAR

Couche de polydiacétylène orientée

Une couche de polydiacétylène orientée est obtenue par épitaxie sur un monocristal d'orthophtalate acide alcalin ou d'ammonium ou de thallium. La technique est celle du dépôt sous vide par jet moléculaire. Le produit de départ est un monomère de diacétylène purifié cristallisé, par exemple le [1,6-di-(n-carbazolyl)-2,4-hexadiyne!. Les applications en optique non linéaire sont revendiquées.

A method for carrying out volatile material deposits by crystalline growth on solid supports

SYSTEM AND METHOD FOR EPITAXIAL GROWTH BY MOLECULAR BEAM WITH INTRODUCTION OF HYDROGEN TO THE PROCESS

Improvements to the formation of metal films by vapor deposition

PROCEDE POUR OBTENIR UN VIDE POUSSE DANS L'ENCEINTE D'UN REACTEUR D'EPITAXIE PAR JETS MOLECULAIRES ET REACTEUR METTANT EN OEUVRE CE PROCEDE

LE PROCEDE DE L'INVENTION CONSISTE DANS LE DEPOT D'UNE COUCHE D'UN METAL TRES REACTIF AVEC L'OXYGENE SUR LA PAROI INTERNE DE L'ENCEINTE D'EPITAXIE, PERMETTANT AINSI DE PIEGER LES MOLECULES DES GAZ RESIDUELS.

Device for supporting a substrate carrier in transfer for the manufacture of semiconductors by vacuum epitaxy

Doped semiconductor thin film mfr. - by sputtering from main and auxiliary targets of semiconductor and dopant, with oscillation of dopant target

Improvements with the metal film formation by vapor deposit

EQUIPMENT Of EPITAXY BY MOLECULAR JET

Équipement d'épitaxie comprenant une enceinte d'épitaxie sous vide contenant un support du substrat, et à au moins une cellule d'évaporation sous vide du matériau d'épitaxie fermée par un diaphragme présentant au moins une lumière et communiquant avec l'enceinte d'épitaxie par une bride de liaison. Il comprend en outre une plaque mobile dont la section correspond à la section du diaphragme, placée en regard dudit diaphragme perforé.

PROCEDE DE NUCLEATION ET DE CROISSANCE D'UN MONOCRISTAL DANS UNE ENCEINTE TUBULAIRE FERMEE ET PRODUITS OBTENUS

L'INVENTION SE RAPPORTE A LA PRODUCTION DE MONOCRISTAUX. ELLE CONCERNE UN PROCEDE DE NUCLEATION ET DE CROISSANCE D'UN MONOCRISTAL DANS UNE ENCEINTE TUBULAIRE 4 COMPRENANT UNE ZONE SOURCE 6 ET UNE ZONE PUITS 7 CHAUFFEES A DES TEMPERATURES UNIFORMES DIFFERENTES. PAR UN REGLAGE APPROPRIE DE CES TEMPERATURES ON PEUT NUCLEER ET FAIRE CROITRE UN MONOCRISTAL EN 8. APPLICATION NOTAMMENT A LA PRODUCTION DE MONOCRISTAUX DE HGI.

A method for manufacturing a silicon substrate having a distorted layer

METHOD FOR GROWING CRYSTALS HAVING IMPURITIES AND CRYSTALS PREPARED THEREBY

DIFFERENTIAL STRESS REDUCTION IN THIN FILMS

A crystalline thin film structure formed by the deposition of a predominant first crystalline material in two or more layers interleaved by layers of a second crystalline material having a lattice constant that differs from the lattice constant of the predominant first crystalline material in order to disrupt the growth of columnar crystals in the predominant first crystalline material in order to reduce the differential stress profile through the thickness of the film structure relative to the differential stress profile of a crystalline thin film structure formed solely from the predominant first crystalline material. © KIPO & WIPO 2007 ...

METAL STRIP FOR EPITAXIAL COATING AND METHOD FOR PRODUCTION THEREOF

The invention relates to a metal strip made from a layer composite for epitaxial coating and a method for production thereof. The aim of the invention is to produce such a high-strength metal strip and a corresponding production method. Said metal strip is a layer composite made from at least one biaxially-textured base layer of the metals Ni, Cu, Ag or alloys thereof and at least one further metallic layer, whereby the individual further metallic layers are made from one or several intermetallic phases or from a single metal in which one or several intermetallic phases are contained. The production method is characterised in that the formation of intermetallic phases at the end of the production process is carried out by means of interdiffusion of elements provided in the layers. Such strips can be advantageously used, for example, as support strips for the deposition of biaxial textured layers made from YBa2Cu3Ox high temperature superconducting material. Said high temperature superconductors ...

반도체 에피텍셜 웨이퍼의 제조 방법, 반도체 에피텍셜 웨이퍼, 및 고체 촬상 소자의 제조 방법

... 본 발명은, 보다 높은 게터링 능력을 발휘함으로써, 금속 오염을 억제할 수 있는 반도체 에피텍셜 웨이퍼를 제조하는 방법을 제공한다. 본 발명의 반도체 에피텍셜 웨이퍼의 제조 방법은, 반도체 웨이퍼(10)의 표면(10A)에 클러스터 이온(Cluster Ions; 16)을 조사하여, 반도체 웨이퍼의 표면(10A)에, 클러스터 이온(16)의 구성 원소인 탄소 및 도펀트 원소가 고용(固溶)된 개질층(18)을 형성하는 제 1 공정과, 반도체 웨이퍼의 개질층(18) 상에, 상기 개질층(18)에 있어서의 도펀트 원소의 피크 농도보다 도펀트 원소의 농도가 낮은 에피텍셜층(20)을 형성하는 제 2 공정을 가지는 것을 특징으로 한다.

METHOD OF MANUFACTURING METAL OXIDE DEVICE FOR ACQUIRING SUPERCONDUCTING CHARACTERISTICS OF SINGLE CRYSTAL LEVEL FROM LINE MATERIAL

PURPOSE: A method of manufacturing a metal oxide device is provided to obtain a line material with superconducting characteristics of a single crystal level. CONSTITUTION: A separation layer(11) is formed on a base material(1) with a single crystal or an oriented surface. A metal oxide layer(12) is formed on the separation layer. A support layer(13) is formed on the metal oxide layer. A multilayer thin film(10) composed of the metal oxide layer and the support layer is separated from the base material by removing the separation layer therefrom. A circular type loop or a conveyer type loop is used as the base material. The resultant structure is one selected from a group consisting of a superconducting line material, a ferroelectric multilayer thin film and a photoelectric device. © KIPO 2006 ...

PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER

SI 상에서 성장된 III-V 족 재료의 제어된 n-도핑 방법

The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

KETTINGVORMIGE FOSFORMATERIALEN, THE CONSTRUCTION AND APPLICATION OF IT AS WELL AS SEMICONDUCTORS AND OTHER INSTITUTIONS IN WHICH THEY ARE APPLIED

CONDUCTIVE CONTACTS ON GE

The present invention provides a method for forming conductive contacts (6, 7) on a substrate (1 ) comprising at least a Ge surface (3). The method comprises providing a GeN layer (4) in direct contact with the Ge surface (3), the GeN layer (4) having a thickness of between 0.1 nm and 100 nm and forming at least one conductive contact (6, 7) on top of the GeN layer (4) and in direct contact therewith. Forming a GeN layer (4) before forming the contacts (6, 7) allows forming contacts on Ge with an increased influence of the workf unction of the conductive material used to form the contacts (6, 7) on the barrier height of the contacts formed. The present invention also provides a structure comprising such conductive contacts (6, 7) and a semiconductor device comprising at least one structure having such conductive contacts (6, 7).

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF

The invention relates to a method for manufacturing semiconductor heterostructures by way of molecular beam epitaxy, comprising the following steps: placing a substrate into a first vacuum chamber, heating the substrate to a first temperature, generating the first epitaxial layer, wherein the layer comprises a first material that contains a binary, ternary or quaternary compound of elements of main group III and V and that is deposited from at least one molecular beam, cooling the substrate to a second temperature, wherein the molecular beam is broken up by elements of main group III and V, heating the substrate to a third temperature and generating the second epitaxial layer, wherein the layer comprises a second material that contains a binary, ternary, or quaternary compound of elements of main group III and V and that is deposited from at least one molecular beam. The invention further relates to semiconductor components that are obtained using said method.

EPITAXIAL SUBSTRATE FOR SMEICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND PROCESS FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT

Disclosed is an epitaxial substrate that has good two-dimensional electron gas properties and has a reduced strain-derived internal stress. The epitaxial substrate comprises a channel layer formed of a first group III nitride represented by Inx1Aly1Gaz1N wherein x1 + y1 + z1 = 1 and which has a composition satisfying x1 = 0 and 0 ≤ y1 ≤ 0.3. The epitaxial substrate further comprises a barrier layer formed of a second group III nitride represented by Inx2Aly2Gaz2N wherein x2 + y2 + z2 = 1 and which has a composition that falls within an area surrounded by five straight lines determined dependent upon the composition of the first group III nitride (AlN molar fraction) on a ternary phase diagram in which InN, AlN, and GaN constitute vertices.

METHOD OF PRODUCING SILICON CARBIDE AND VARIOUS FORMS THEREOF

A method of producing silicon carbide by introducing into the interior of a furnace a quantity of relatively pure elemental silicon and a quantity of elemental carbon; subjecting the interior of the furnace to a vacuum; and heating the silicon and carbon to a temperature of 1500 °C-2200 °C to vaporize the silicon and to react it with the carbon to produce silicon carbide. Several embodiments are described for producing a heating or lighting element or high temperature sensor. The carbon is shaped with the aid of a binder and silicon particles are applied to the outer surfaces. A further embodiment for producing silicon carbide powder is also described.

USE OF SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS

The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of UVV semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.

PRODUCTION METHOD FOR ATOMIC AND MOLECULAR PATTERNS ON SURFACES AND NANOSTRUCTURED DEVICES

A method for vapour-depositing atomic and/or molecular patterns (15) on a substrate (4) and nanoscale-devices produced by the method are disclosed. The method comprises the steps of choosing a substrate (4), at least two material components (3a; 25, 26) and their mixing ratio to form a specified self-organized atomic and/or molecular pattern (15) of the components (3a; 25, 26) by vapour-depositing them on the substrate (4). Embodiments refer e. g. to: intermingling the components (3a; 25, 26) on a truely atomic or molecular scale; forming periodic patterns (15); using an unstructured atomically planar or a pre-patterned deposition surface (4a); and building defects, dopants and/or functional molecules (18) into the specified pattern (15). The method is more flexible, simpler, more stable and less error-prone than conventional molecular pattern formation. Producible nanostructures (16a-16c, 22-23) comprise wires (16a) e. g. of C60-molecules (25), grids (16b), networks (16b), storage elements ...

FREE STANDING SUBSTRATES BY LASER-INDUCED DECOHERENCY AND REGROWTH

A method for the production of crack-free Group III-Nitride layers is disclosed. The method proceeds by growing a crack-free first layer (502) of Group III-Nitride on a starting substrate (501). A partial to complete loss of coherency (504) is then achieved between a lattice of the first layer and a lattice of the starting substrate. A second layer (506) is grown to form a composite layer (507) that includes the first layer (502) and the second layer (506) such that the first layer is between the second layer (506) and the substrate (501). The starting substrate (501) may then be completely separated from the composite layer to produce the freestanding crack-free Group III-Nitride layer.

Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

Method to grow self-assembled epitaxial nanowires

Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other. The nanowires are grown by first selecting the appropriate combination of materials that fulfill the foregoing criteria. The surface of the substrate on which the nanowires are to be formed must be cleaned in order (1) to ensure that the surface has an atomically flat, regular atomic structure on terraces and regular steps and (2) to remove impurities. Finally, epitaxial deposition of ...

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Methods for growing a non-phase separated group-III nitride semiconductor alloy

Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device

In a semiconductor device 100 , it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×10 10 pieces/cm 2 to 2000×10 10 pieces/cm 2 of sulfide in terms of S and 2 at % to 20 at % of oxide in terms of O in a surface layer 12 . By thus preventing C from piling up, a high-resistivity layer is prevented from being formed on the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 . Accordingly, it is possible to reduce electrical resistance at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10 , and improve the crystal quality of the epitaxial layer 22 . Consequently, it is possible to improve the emission intensity and yield of the semiconductor device 100.

Methods for epitaxial silicon growth

Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.

Semiconductor element and manufacturing method of the same

A semiconductor element includes a semiconductor layer mainly composed of Mg x Zn 1-x O (0<=x<1), in which manganese contained in the semiconductor layer as impurities has a density of not more than 1×10 16 cm −3 .

Method for manufacturing magnetic recording medium, and magnetic recording/reproducing apparatus

A method for manufacturing a magnetic recording medium including at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate. The perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer. The orientation control layer, formed of a Co—Cr alloy, is formed by the reactive sputtering using a mixture of a sputtering gas and nitrogen.

Use of freestanding nitride veneers in semiconductor devices

Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Metal Oxide Semiconductor Films, Structures, and Methods

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE

A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form GaN wafers. The crystal growing unit grows a second GaN crystal on a substrate formed by using a GaN wafer, by the hydride vapor phase epitaxy method, thus producing a bulked GaN crystal. 123-. (canceled)24. A method for producing a columnar-shaped group-III nitride crystal , the method comprising:{'sup': 5', '−2, '(a) obtaining a first group-III nitride crystal, grown by a flux method at a first crystal-growth speed, and having a dislocation density equal to or less than 10cm;'}{'sup': 5', '−2, '(b) growing a second group-III nitride crystal at a second crystal-growth speed, by vapor phase epitaxy method on a surface of the first group-III nitride crystal having the dislocation density equal to or less than 10cm,'}wherein the second crystal-growth speed is faster than the first crystal-growth speed, andwherein the first group-III nitride crystal is in a columnar shape, in which a length in a c-axis direction is longer than a length in an a-axis direction.25. The method according to claim 24 , further comprising slicing the first group-III nitride crystal before performing the growing.26. The method according to claim 25 , wherein the first group-III nitride crystal is capable of being reused.27. The method according to claim 24 , wherein the first group-III nitride crystal and the second group-III nitride crystal are gallium nitride crystals.28. The method according to claim 24 , wherein the flux method includes:detecting a temperature of the seed crystal and first group-III nitride crystal and a temperature of a melt mixture; andcontrolling a flow rate of the nitrogen source gas supplied into the melt mixture, to change the temperature of the seed crystal and ...

Nitride semiconductor wafer, nitride semiconductor device, and method for growing nitride semiconductor crystal

According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 18 cm −3 or more and less than 1×10 21 cm −3 . The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. 1. A method of manufacturing a silicon carbide ingot , comprising the steps of:preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; andgrowing a silicon carbide layer on a surface of said base substrate,in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 10° C./cm or less.2. The method of manufacturing a silicon carbide ingot according to claim 1 , whereina surface of said silicon carbide layer located opposite to a side where the base substrate is located includes a (0001) facet plane, andsaid (0001) facet plane includes a central portion of said surface of the silicon carbide layer.3. The method of manufacturing a silicon carbide ingot according to claim 2 , whereina portion located under a region having said (0001) facet plane in said silicon carbide layer after the step of growing a silicon carbide layer is a high-nitrogen-concentration region higher in nitrogen concentration than a portion other than said portion located under the region having said (0001) facet plane in said silicon carbide layer.4. The method of manufacturing a silicon carbide ingot according to claim 3 , further ...

METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT

This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region. 1. A method of epitaxial growth effectively preventing auto-doping effect , characterized by comprising the following steps:1) Preparing the semiconductor substrate having heavily-doped buried layer and removing surface oxide from said semiconductor substrate;2) Cleaning the reaction chamber to be used so as to remove impurities from the inner wall of the reaction chamber;3) Loading said semiconductor substrate into the cleaned reaction chamber and pre-baking said semiconductor substrate under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of said semiconductor substrate;4) Under high temperature and low gas flow conditions, growing a first intrinsic ...

OXIDE SUBSTRATE AND MANUFACTURING METHOD THEREFOR

Some aspects of the invention provide an oxide substrate having a flat surface at the atomic layer level, and suited to forming a thin film of a perovskite manganese oxide. One aspect of the invention provides a single-crystal oxide substrate having a single-crystal supporting substrate of (210)-oriented SrTiOand a single-crystal underlayer of (LaAlO)—(SrAlTaO), which is LSAT, formed on the (210) plane surface of the supporting substrate. In another aspect of the present invention, the LSAT underlayer A is formed in an amorphous state. Other aspects of the invention are also disclosed. 1. An oxide substrate comprising:{'sub': '3', 'a single-crystal supporting substrate of (210)-oriented SrTiO; and'}{'sub': 3', '0.3', '0.5', '0.5', '3', '0.7, 'sup': 'O', 'an underlayer of (LaAlO)—(SrAlTa), which is LSAT, formed on the (210) plane surface of the supporting substrate.'}2. The oxide substrate according to claim 3 , wherein the thickness of the LSAT underlayer is 3×d(210) or more given d(210) as the lattice spacing of the LSAT (210) plane.3. The oxide substrate according to claim 1 , wherein the LSAT underlayer is formed in a crystal state.4. The oxide substrate according to claim 1 , wherein the LSAT underlayer is formed in an amorphous state.5. A method for manufacturing an oxide substrate claim 1 , comprising:{'sub': '3', 'a step of preparing a single-crystal supporting substrate of (210)-oriented SrTiO; and'}{'sub': 3', '0.3', '0.5', '0.5', '3', '0.7, 'a step of forming an underlayer of (LaAlO)—(SrAlTaO), which is LSAT, on the (210) plane surface of the supporting substrate.'}6. The method for manufacturing an oxide substrate according to claim 5 , wherein the thickness of the LSAT underlayer is 3×d(210) or more given d(210) as the spacing of atomic layers of the LSAT (210) plane.7. The method for manufacturing an oxide substrate according to claim 5 , wherein the step of forming the LSAT underlayer is performed at a supporting substrate temperature at which the LSAT ...

METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

In a powder fabrication step (S) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (). In a purification process step (S), the sublimation starting material () is disposed in a purified graphite crucible (), and a sublimation/growth step (S) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas. 1. A method of producing a silicon carbide single crystal employing a production apparatus having a graphite member formed of graphite , disposing a raw material including a silicon carbide in the graphite member , and heating and sublimating the raw material and growing a single crystal of the silicon carbide on a seed crystal in an atmospheric gas , the method comprising:the step of fabricating the raw material by mixing a metal material including a transient metal atom with a silicon carbide source including the silicon carbide;the step of purification treatment to retain the graphite member under a temperature condition of 2,000 degrees C. or more, in an inert gas atmosphere of 100 Pa to 100 kPa; andthe step of disposing the raw material in the graphite member subsequent to the step of purification treatment, and heating and sublimating the raw material and growing a silicon carbide single crystal on the seed crystal.2. The method of producing a silicon carbide single crystal according to claim 1 , whereinthe silicon carbide source is a silicon carbide polycrystalline substance produced by means of a chemical vapor ...

Method for controlled growth of silicon carbide and structures produced by same

A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.

Method of Manufacturing III-Nitride Crystal

Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. 1. A method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001} , designated by choice , the III-nitride crystal manufacturing method including:a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation;a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; anda step of growing III-nitride crystal onto the major surfaces of the substrates.2. A III-nitride crystal manufacturing method as set forth in claim 1 , wherein the designated plane orientation is misoriented by an off angle of 5° or less with respect to any crystallographically equivalent plane orientation selected from the group consisting of {1−10x} (wherein x is a whole number) claim 1 , {11−2y} ( ...

SINGLE CRYSTAL MANUFACTURING APPARATUS

A cover member () of an apparatus () for producing single crystals is provided with a projection () generally in the center. The projection () is disposed so as to protrude toward the inside of a crucible main body () through a cover member opening (). A seed crystal () is disposed between a supporting portion () and a contact surface () of the projection () which is inserted into a guide opening (). The apparatus () for producing single crystals is configured such that the contact surface () presses the entire back surface of the seed crystal (), said back surface being on the reverse side of the crystal growth surface of the seed crystal (), against the projection () when a screw thread () that is formed on the projection () is screwed to a thread groove () that is formed on an engaging portion (). 1. A single crystal manufacturing apparatus comprising:a crucible main body that having a substantially cylindrical shape in which a bottom portion is formed at one end portion of the crucible main body and an opening portion is formed at another end of the crucible main body, a sublimation raw material being disposed at the bottom portion; anda capping member that closes the opening portion, on which a seed crystal being disposed at a position facing the sublimation raw material, whereinthe single crystal manufacturing apparatus sublimates the sublimation raw material and then recrystallizing a single crystal on the seed crystal,a guide portion having a conical face is mounted on the capping member, a diameter of the conical face being increased as going down in a growing direction of the single crystal,the capping member has a substantially columnar projection portion projecting inward of the crucible main body,a contacting face having a diameter that is equal to a diameter of the seed crystal or greater than the diameter of the seed crystal is formed at the projection portion, an engagement portion which has an aperture fitting to an outer diameter of the projection ...

HIGHLY EPITAXIAL THIN FILMS FOR HIGH TEMPERATURE/HIGHLY SENSITIVE CHEMICAL SENSORS FOR CRITICAL AND REDUCING ENVIRONMENT

An oxygen sensor includes an epitaxial oxide thin film double perovskite oxygen sensor formed on a single crystal oxide substrate. The thin film includes a lanthanide element, barium, cobalt, and oxygen. 1. An oxygen sensor , comprising:a single crystal oxide substrate,a thin film double perovskite epitaxial oxide formed on the single crystal oxide substrate, wherein the thin film oxide comprises a lanthanide element, barium, cobalt, and oxygen;wherein the thin film oxide has a thickness such that the thin film oxide is capable of undergoing a reversible reaction with oxygen.2. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.3. The oxygen sensor of claim 1 , wherein the thin film oxide comprises (LaBa)CoO.4. The oxygen sensor of claim 1 , wherein the single crystal oxide substrate comprises LaAlO.5. The oxygen sensor of claim 1 , wherein the thin film oxide has a thickness of less than 500 nm.6. A method of making an oxygen sensor comprising: forming a thin film double perovskite epitaxial oxide on a single crystal oxide substrate claim 1 , wherein the thin film oxide comprises a lanthanide element claim 1 , barium claim 1 , cobalt claim 1 , and oxygen.7. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition.8. The method of claim 6 , wherein the thin film oxide is formed on the single crystal oxide substrate using pulsed laser deposition with a wavelength of 248 nm.9. The method of claim 6 , wherein the thin film oxide comprises (LnBa)CoOwhere Ln is a lanthanide element.10. The method of claim 6 , wherein the thin film oxide comprises (LaBa)CoO.11. The method of claim 6 , wherein the single crystal oxide substrate comprises LaAlO.12. The method of claim 6 , wherein the thin film oxide has a thickness of less than 500 nm.13. A method of detecting the presence of oxygen claim 6 , comprising:locating an oxygen sensor comprising a ...

RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS

[Object] To provide a radical generator which can produce radicals at higher density. 1. A radical generator comprising:a supply tube for supplying a gas;a plasma-generating tube made of a dielectric material, the plasma-generating tube being connected to the supply tube at the downstream end thereof;a coil winding about the outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube;an electrode which covers the outer wall of the plasma-generating tube and which is disposed between the coil and the supply tube, for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma; anda parasitic-plasma-preventing tube which is made of a dielectric material, which is connected to the opening of the supply tube proximal to the connection site between the supply tube and the plasma-generating tube, and which covers the inner wall of the supply tube.2. A radical generator according claim 1 , further comprising:a parasitic-plasma-preventing tube which comprising a dielectric material, which is connected to the opening of the supply tube proximal to the connection site between the supply tube and the plasma-generating tube, and which covers the inner wall of the supply tube,wherein the supply tube comprising a conductive material.3. A radical generator according claim 2 , further comprising a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively coupled plasma to the center of the plasma-generating tube.4. A radical generator according to claim 2 , further comprising a plurality of permanent magnets which are disposed along the outer circumference of the zone of the plasma-generating tube where a capacitively coupled plasma is generated and which localize the capacitively ...

APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL

The invention is an apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material, thereby to recrystallize the aluminum nitride onto a seed crystal, which includes a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, and a heating element that is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, wherein the growth vessel includes a main body which has an accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and wherein the heating element is composed of a metal material containing tungsten. 1. An apparatus for production of an aluminum nitride single crystal that produces the aluminum nitride single crystal by heating an aluminum nitride raw material to sublimate the raw material , thereby to recrystallize the aluminum nitride onto a seed crystal , the apparatus comprising:a growth vessel that accommodates the aluminum nitride raw material, and is composed of a material that has corrosion resistance with respect to the aluminum gas generated upon sublimation of the aluminum nitride raw material, anda heating element which is arranged on the outside of the growth vessel, and heats the aluminum nitride raw material through the growth vessel, whereinthe growth vessel comprises a main body which has the accommodation section that accommodates the aluminum nitride and a lid which seals the accommodation section of the main body hermetically, and whereinthe heating element is composed of a metal material containing tungsten.2. The apparatus for production of an aluminum nitride single crystal according to claim 1 , wherein the ...

LOAD LOCK HAVING SECONDARY ISOLATION CHAMBER

A load lock includes a chamber including an upper portion, a lower portion, and a partition between the upper portion and the lower portion, the partition including an opening therethrough. The load lock further includes a first port in communication with the upper portion of the chamber and a second port in communication with the lower portion of the chamber. The load lock includes a rack disposed within the chamber and a workpiece holder mounted on a first surface of the rack, wherein the rack and the workpiece holder are movable by an indexer that is capable of selectively moving wafer slots of the rack into communication with the second port. The indexer can also move the rack into an uppermost position, at which the first surface of the boat and the partition sealingly separate the upper portion and the lower portion to define an upper chamber and a lower chamber. Auxiliary processing, such as wafer pre-cleaning, or metrology can be conducted in the upper portion. 1. A method of transporting workpieces , the method comprising:loading a workpiece into a boat through a first port in communication with a first portion of a chamber of a load lock, the boat disposed in the chamber;transferring the workpiece to a workpiece holder mounted on a first surface of the boat;moving the boat towards a partition between the first portion of the chamber and a second portion of the chamber to sealably engage the partition with the first surface of the boat, wherein moving the boat comprises moving the workpiece holder into the second portion of the chamber, and sealably engaging the partition with the first surface of the boat;increasing the pressure of the second portion of the chamber; andunloading the workpiece through a second port in communication with the second portion of the chamber.2. The method of claim 1 , wherein the first portion of the chamber comprises a lower portion of the chamber and wherein the second portion of the chamber comprises an upper portion of the ...

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL

A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method includes the following steps. That is, there are prepared a seed substrate made of silicon carbide and a silicon carbide source material. By sublimating the silicon carbide source material, the silicon carbide single-crystal is grown on a growth surface of the seed substrate. In the step of growing the silicon carbide single-crystal, a first carbon member provided at a position facing a side wall of the seed substrate is etched at a rate of 0.1 mm/hour or less. By suppressing a change in growth condition for the silicon carbide single-crystal in the crucible, there can be provided a method for manufacturing a silicon carbide single-crystal so as to stably grow the silicon carbide single-crystal. 1. A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method , comprising the steps of:preparing a seed substrate made of silicon carbide, and a silicon carbide source material; andgrowing said silicon carbide single-crystal on a growth surface of said seed substrate by sublimating said silicon carbide source material, a first carbon member provided at a position facing a side wall of said seed substrate being etched at a rate of 0.1 mm/hour or less in the step of growing said silicon carbide single-crystal.2. The method for manufacturing the silicon carbide single-crystal according to claim 1 , wherein in the step of growing said silicon carbide single-crystal claim 1 , said first carbon member is etched at a rate of 0.05 mm/hour or less.3. The method for manufacturing the silicon carbide single-crystal according to claim 1 , wherein said silicon carbide single-crystal has a maximum height of 50 mm or more.4. The method for manufacturing the silicon carbide single-crystal according to claim 1 , further ...

Non-polar plane of wurtzite structure material

The present invention relates to a method for growing a novel non-polar (13 0) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 0) plane obtained according to the aforementioned method. 1. A method for growing a non-polar (13 0) plane epitaxy layer of wurtzite structure , which comprises the following steps:providing a single crystal oxide with perovskite structure;selecting a plane of the single crystal oxide as a substrate; and{'o': {'@ostyle': 'single', '4'}, 'forming a non-polar (13 0) plane epitaxy layer of wurtzite semiconductors on the plane of the substrate by a vapor deposition process.'}2. The method of claim 1 , wherein the single crystal oxide is an oxide with perovskite structure of LaAlO claim 1 , LaNiO claim 1 , LaGaO claim 1 , SrTiO claim 1 , (LaSr)(AlTa)O claim 1 , PrAlO claim 1 , or NdAlO.3. The method of claim 1 , wherein the non-polar (13 0) plane epitaxy layer is a zinc oxide claim 1 , or a Group III nitride.4. The method of claim 1 , wherein the zinc oxide is further doped with magnesium claim 1 , calcium claim 1 , strontium claim 1 , barium claim 1 , cadmium claim 1 , aluminum claim 1 , gallium claim 1 , indium claim 1 , or combinations thereof.5. The method of claim 3 , wherein the Group III nitride is gallium nitride claim 3 , indium nitride claim 3 , aluminum nitride claim 3 , indium gallium nitride claim 3 , aluminum gallium nitride claim 3 , aluminum indium nitride claim 3 , or aluminum indium gallium nitride.6. The method of claim 1 , wherein the plane is a crystal plane or a cross section of the single crystal oxide.7. The method of claim 1 , wherein the plane is a plane ...

Fabrication method and fabrication apparatus of group iii nitride crystal substance

A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. 1. A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation , said method comprising the steps of:preparing a seed substrate made of silicon carbide and silicon carbide raw material, andgrowing said silicon carbide single crystal on a growth face of said seed substrate by sublimating said silicon carbide raw material,in said step of growing said silicon carbide single crystal, a maximum growing rate of said silicon carbide single crystal growing on said growth face of said seed substrate being greater than a maximum growing rate of silicon carbide crystal growing on a surface of said silicon carbide raw material.2. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed substrate exceeds 20 mm in said step of growing said silicon carbide single crystal.3. The method for manufacturing silicon carbide single crystal according to claim 1 , wherein a maximum height of said silicon carbide single crystal growing on said seed ...

System and process for high-density, low-energy plasma enhanced vapor phase epitaxy

A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10̂-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

Method for making epitaxial structure

A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the epitaxial growth surface. The epitaxial layer is grown from the exposed part of the epitaxial growth surface and through the aperture.

Physical Vapor Transport Growth System For Simultaneously Growing More Than One SIC Single Crystal and Method of Growing

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

Wavelength Converter for an LED, Method of Making, and LED Containing Same

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of ±15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Method for producing silicon carbide crystal

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500° C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.

Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a Na x La 1-x+y Ni 1-y O 3-x layer having only an (001) orientation and a (1-α) (Bi, Na, Ba) TiO 3 -αBiQO 3 layer having only an (001) orientation. The (1-α) (Bi, Na, Ba) TiO 3 -αBiQO 3 layer is formed on the Na x La 1-x+y Ni 1-y O 3-x layer. The character of Q represents Fe, Co, Zn 0.5 Ti 0.5 , or Mg 0.5 Ti 0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of α represents a value of not less than 0.20 and not more than 0.50.

LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE

A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors. 1. A lattice matching layer for use in a multilayer substrate structure , the lattice matching layer including:a first chemical element, the first chemical element having a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature, the hexagonal close-packed structure of the first chemical element having a first lattice parameter; anda second chemical element, the second chemical element having a hexagonal close-packed structure at room temperature with similar chemical properties to the first chemical element, the hexagonal close-packed structure of the second chemical element having a second lattice parameter, the second chemical element being miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature,wherein a lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors.2. The lattice matching layer of claim 1 , wherein a linear ...

METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND

Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal. 1. Method for crystal growth from a surfactant of a metal nonmetal (MN) compound , comprising the procedures of:providing a seed crystal;introducing atoms of a first metal to said seed crystal in order to form a thin liquid metal wetting layer on at least one surface of said seed crystal;setting a temperature of said seed crystal below a minimal temperature required for dissolving MN molecules in said thin liquid metal wetting layer and above a melting point of said first metal, each one of said MN molecules being formed from at least one atom of a second metal and at least one atom of a first nonmetal;introducing said MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of said thin liquid metal wetting layer between said MN surfactant monolayer and said at least one surface of said seed crystal; andregulating a thickness of said thin liquid metal wetting layer such that at least some of said MN molecules of said MN surfactant monolayer couple with said at least one surface of said seed crystal, thereby growing an epitaxial layer of said MN compound on said seed crystal.2. The ...

Silicon carbide crystal and method of manufacturing silicon carbide crystal

An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

Crystal Growth Apparatus

An apparatus for crystal growth including a source chamber configured to contain a source material, a growth chamber, a passage for transport of vapour from the source chamber to the growth chamber, and a support provided within the growth chamber that is configured to support a seed crystal. The coefficient of thermal expansion of the support is greater than the coefficient of thermal expansion of the growth chamber. 1. An apparatus for crystal growth , the apparatus comprising:a source chamber configured to contain a source material;a growth chamber;a passage for transport of vapour from the source chamber to the growth chamber; anda support provided within the growth chamber and configured to support a seed crystal;wherein the coefficient of thermal expansion of the support is greater than the coefficient of thermal expansion of the growth chamber.2. An apparatus according to claim 1 , in which the support is movable with respect to the growth chamber such that the upper surface of the support and hence the upper surface of the crystal can be moved as the crystal is grown.3. An apparatus according to claim 2 , in which the support is coupled to or mounted on an elongate shaft.4. An apparatus according to claim 3 , in which the elongate shaft has a coefficient of thermal expansion which is the same or similar as that of the support or that of the growth chamber.5. An apparatus according to claim 1 , in which the growth chamber and the support respectively have a generally circular cross-sectional area.6. An apparatus according to in which the tube is formed from quartz or from pyrolytic boron nitride.7. An apparatus according to claim 1 , in which the support is formed from sapphire claim 1 , alumina claim 1 , silicon carbide claim 1 , tungsten claim 1 , tantalum or molybdenum.8. An apparatus according to in which the growth chamber is formed from quartz and the support is formed from sapphire.9. An apparatus according to in which the growth chamber has an inner ...

Method and apparatus for producing large, single-crystals of aluminum nitride

Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm −2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

APPARATUS FOR ATTACHING SEED

Disclosed is an apparatus for attaching a seed. The apparatus for attaching the seed includes a holder fixing part to fix a seed holder; a pressing part to apply a pressure to the seed holder; and a seed fixing part provided under the seed holder to fix the seed. 1. An apparatus for attaching a seed , the apparatus comprising:a holder fixing part to fix a seed holder;a pressing part to apply a pressure to the seed holder; anda seed fixing part provided under the seed holder to fix the seed.2. The apparatus of claim 1 , wherein the seed fixing part includes a pore.3. The apparatus of claim 2 , wherein at least one pore is provided claim 2 , and intervals between pores correspond to each other.4. The apparatus of claim 3 , wherein the pore has a size in a range of 100 um to 1 mm.5. The apparatus of claim 1 , wherein the seed fixing part includes graphite.6. The apparatus of claim 5 , wherein the graphite has a form of a mesh.7. The apparatus of claim 1 , wherein the seed fixing part is provided therein with a groove to seat the seed.8. The apparatus of claim 7 , wherein the groove has a depth smaller than a thickness of the seed.9. The apparatus of claim 8 , wherein the groove has a diameter corresponding to a diameter of the seed.10. The apparatus of claim 1 , further comprising a heating part under the seed fixing part.11. The apparatus of claim 1 , wherein the holder fixing part includes a locking part to lock the seed holder.12. The apparatus of claim 1 , wherein the pressing part is provided on the seed holder.13. A method for attaching a seed claim 1 , the method comprising:placing a seed holder in a holder fixing part;fixing a seed to a seed fixing part provided under the holder fixing part; andattaching the seed and the seed holder.14. The method of claim 13 , wherein claim 13 , in the attaching of the seed and the seed holder claim 13 , the holder claim 13 , the holder fixing part moves downward.15. The method of claim 13 , wherein claim 13 , in the attaching ...

SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S×100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less. 1. A method for producing an SiC single crystal , having the following constitution:(a) the method for producing an SiC single crystal repeats an a-plane growth step n (n≧2) times;(b) a first a-plane growth step is a step for carrying out the a-plane growth of an SiC single crystal on a first growth plane by using a first seed crystal having the first growth plane with an offset angle from the {0001} plane of 80° to 100°;(c) a k-th a-plane growth step (2≦k≦n) is a step for cutting out a k-th seed crystal having a k-th growth plane with a growth direction 45° to 135° different from the growth direction of a (k−1)-th a-plane growth step and an offset angle from the {0001} plane of 80° to 100° from a (k−1)-th grown crystal obtained in the (k−1)-th a-plane growth step, and carrying out the a-plane growth of an SiC single crystal on the k-th growth plane; and{'sub': 'facet', 'claim-text': {'br': None, 'i': S', 'S', '/S, 'sub': facet', '1', '2, '(%)=×100\u2003\u2003(A)'}, '(d) the k-th a-plane growth step (1≦k≦n) is a step for carrying out the a-plane growth of an SiC single crystal on the k-th growth plane so that an area ratio Sof a Si-plane side facet region represented by the equation (A) is maintained at 20% or less{'sub': 1', '2, 'where Sis the sum of the total area of areas obtained by projecting polar plane steps of Si-plane side on the k-th growth plane and the total area of areas obtained by projecting {1-100} plane facets sandwiched between the polar plane steps of Si-plane side on the k-th growth plane, and Sis the total area of the k-th growth plane.'}2. The method for producing an SiC single crystal according to claim 1 ,{'sub': '1', 'wherein the ...

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138.-. (canceled)39. An AlN single crystal having at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 ,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 ,500 nm.40. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm.41. The AlN single crystal of claim 40 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 40 ,500 nm.42. The AlN single crystal of claim 39 , wherein the AlN single crystal has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.43. The AlN single crystal of claim 39 , wherein the AlN single crystal has a microvoid density less than approximately 10cm.44. The AlN single crystal of claim 39 , wherein the AlN single crystal is substantially crack-free.45. The AlN single crystal of claim 39 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c-face and an Al polarity.46. The AlN single crystal of claim 40 , wherein the AlN single crystal is in the form of a wafer with a surface having a crystalline orientation within 2° of the (0001) c ...

Production of Free-Standing Crystalline Material Layers

Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness. 1. A growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry , comprising:a host substrate;a separation layer disposed on the host substrate for growth of a layer of the crystalline material on the separation layer, the separation layer having a separation layer thickness, and the separation layer being mechanically weaker than the host substrate and the crystalline material layer; andan array of apertures disposed in the separation layer, each aperture in the array extending through the separation layer thickness, the array of apertures having an array symmetry that matches a crystallographic symmetry of the crystalline material.2. The growth structure of further comprising a growth template layer disposed on the host substrate under the separation layer and exposed in the apertures of the separation layer claim 1 , wherein the growth template layer comprises a compositional component of the crystalline material.3. The growth structure of further comprising a layer of the crystalline material disposed on the separation layer.4. The growth structure of wherein the crystalline material is monocrystalline.5. The growth structure of wherein the crystalline material layer comprises a crystalline III-V semiconducting material.6. The growth structure of wherein growth template layer comprises GaN claim 2 , and further comprising a crystalline material layer of GaN ...

GROWTH METHOD OF GRAPHENE

The present invention provides a growth method of grapheme, which at least comprises the following steps: S providing an insulating substrate, placing the insulating substrate in a growth chamber; S heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like. 1. A growth method of graphene , at least comprising the following steps:{'b': '1', 'S: providing an insulating substrate, placing the insulating substrate in a growth chamber;'}{'b': '2', 'S: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber;'}{'b': '3', 'S: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate.'}22. The growth method of graphene according to claim 1 , characterized in that: in step S claim 1 , the gas containing catalytic element is a gaseous compound or gaseous elementary substance.32. The growth method of graphene according to claim 1 , characterized in that: in step S claim 1 , outside the growth chamber claim 1 , a solid compound or a solid elementary substance containing the catalytic element is vaporized claim 1 , and the vaporized gas is fed into the growth chamber claim 1 , or claim 1 , a liquid compound or a liquid elementary substance ...

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate. 138.-. (canceled)39. A bulk single crystal of AlN having a thickness greater than 0.1 mm and exhibiting a triple-crystal X-ray rocking curve of less than 50 arcsec full width at half maximum (FWHM) for a (0002) reflection.40. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 1 mm.41. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at least 5 mm.42. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤10 cm.43. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is ≤1 cm.44. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.45. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is ≤10cm.46. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 25 mm.47. The bulk single crystal of claim 39 , wherein a diameter or width of the bulk single crystal is at least 50 mm.48. The bulk single crystal of claim 39 , wherein the thickness of the bulk single crystal is at most 1 mm.49. The bulk single crystal of claim 39 , wherein an areal planar defect density of the bulk single crystal is at least 1 cmand at most 100 cm.50. The bulk single crystal of claim 39 , wherein an areal density of threading dislocations in the bulk single crystal is at least 10cmand at most 10cm.51. The bulk single ...

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES

A single-crystalline LnBMO or LnBMO compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≤δ≤1. Methods of making and using the compound, and devices and compositions including same are also provided. 112-. (canceled)13. A multiferroic device , comprising a single-crystalline LnBMO or LnBMO compound , comprising an ordered oxygen vacancy structure; whereinLn is a lanthanide,B is an alkali earth metal,M is a transition metal,O is oxygen, and0≤δ≤1.1432-. (canceled)33. The multiferroic device of claim 13 , wherein Ln is La claim 13 , Pr claim 13 , Nd claim 13 , Sm claim 13 , or Gd.34. The multiferroic device of claim 13 , wherein B is Ba claim 13 , Sr claim 13 , or Ca.35. The multiferroic device of claim 13 , wherein M is Co claim 13 , Mn claim 13 , Fe claim 13 , or Ni.36. The multiferroic device of claim 13 , wherein the compound has a double perovskite structure. This application claims the benefit of U.S. Provisional Application No. 62/003,751, filed May 28, 2014. The entire contents of the aforementioned application is incorporated by reference in its entirety.This invention was made with government support under Grant No. DE-FE0003780 awarded by the Department of Energy. The government has certain rights in the invention.This application relates to single-crystalline LaBaCoO (LBCO) compounds, methods of making, and their use. In particular, the application relates to epitaxial LBCO thin films, methods of making, and their use.Cobalt oxides have been widely studied for many years due to their high chemical stability, excellent oxygen permeability, and many other unique physical chemistry properties for energy conversion, catalysts, sensors, and solid oxides fuel cells, etc. Kim, G. et al., 88, 024103, (2006); Liu, J. et al., 22, 799-802, (2010); Kim, Y. M. et al., 11, 888-894, (2012). Cobaltates also exhibit rich magnetic and electronic transport ...

METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES

The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. 1. A method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate , comprising the following steps:providing a single crystal oxide with a perovskite structure;using a plane of the single crystal oxide as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein the non-polar m-plane epitaxial layer is III-nitrides.2. The method as claimed in claim 1 , further comprising the following steps:forming an oxide layer on the single crystal oxide;using a plane of the oxide layer as a substrate; andforming a non-polar m-plane epitaxial layer of wurtzite semiconductors on the substrate by a vapor deposition process,wherein, the compositions of the oxide layer and the single crystal oxide are the same or different.3. The method as claimed in claim 1 , wherein the lattice mismatch between the substrate and the non-polar m-plane epitaxial layer is 10% or less.4. The method as claimed in claim 1 , wherein the single crystal oxide is LaAlO claim 1 , SrTiO claim 1 , (La claim 1 , Sr)(Al claim 1 , Ta)O claim 1 , or an LaAlOalloy with a lattice constant difference of 10% or less compared to LaAlO.5. The method as claimed in claim 1 , wherein the III nitride is gallium nitride claim 1 , indium nitride claim 1 , aluminum nitride claim 1 , indium gallium nitride ...

System For Efficient Manufacturing Of A Plurality Of High-Quality Semiconductor Single Crystals, And Method Of Manufacturing Same

A system for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes a plurality of reactors and a common vacuum channel connecting at least a pair of reactors of the plurality of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a single semiconductor crystal. The common vacuum channel is connectable to a vacuum pump system for creating and/or controlling a common gas phase condition in the inner chambers of the pair of reactors.

ENCAPSULATED SUBSTRATE, MANUFACTURING METHOD, HIGH BAND-GAP DEVICE HAVING ENCAPSULATED SUBSTRATE

An encapsulated substrate includes a zinc oxide substrate and a composite barrier layer. The composite barrier layer includes a first film layer having a first material different from zinc oxide, a second film layer covered on a surface of the first film layer and having a second material different from the zinc oxide and the first material, and an active layer formed on the composite barrier layer and corresponding to an acting surface of a zinc oxide substrate and having an acting material different from the zinc oxide. 1. An encapsulated substrate , comprising:a zinc oxide substrate comprising at least one acting surface and being a zinc oxide material having a standard lattice structure of a wurtzite lattice structure; anda composite barrier layer having a thickness greater than 1 nanometer and being surroundingly covered on the zinc oxide substrate, comprising a first film layer which has a thickness greater than 0.1 nanometer and is directly covered and formed on the zinc oxide substrate comprises a first material different from zinc oxide and is provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite lattice structure; a second film layer which has a thickness greater than 0.1 nanometer and is directly covered and formed on a surface of the first film layer comprises a second material different from the zinc oxide and the first material and is provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite lattice structure; a plurality of accumulating film layers sequentially formed on the second film layer and each of which being different from the adjacent accumulating film layer and/or the second film layer and provided with a lattice constant ranged between 120% and 115% or between 105% and 95% of the standard lattice structure as being in the form of the wurtzite ...

THIN FILM TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN AND DRAIN FIELD RELIEF

A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H). 1. A semiconductor device , comprising:a semiconductor layer on an insulating layer;a first doped layer on the semiconductor layer, wherein the first doped layer has a first doping concentration;a second doped layer on the semiconductor layer, wherein the second doped layer has a second doping concentration higher than the first doping concentration;a gate dielectric over an active region of the semiconductor layer;a gate electrode on the gate dielectric; andone or more source/drain contacts to the second doped layer;wherein the first doped layer comprises a lightly doped drain (LDD) region and the second doped layer comprises a source/drain region.2. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises poly-silicon.3. The semiconductor device according to claim 1 , wherein the first doping concentration is in the range of about 5×10cmto about 1×10cm.4. The semiconductor device according to claim 3 , wherein the second doping concentration is in the range of about 1×10cmto about 5×10cm.5. The semiconductor device according to claim 1 , wherein the second doped layer is disposed on the first doped layer.6. The semiconductor device according to claim 1 , wherein the gate dielectric covers a portion of the first doped layer.7. The semiconductor device according to ...

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a <0001> direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a <0001> direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

High Purity SiOC and SiC, Methods Compositions and Applications

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. 136-. (canceled)37. A method of making an article comprising ultra pure silicon carbide , the method comprising:a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;b. curing the combination of the first and second liquids to provide a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.999%; and,d. forming a single crystal SiC structure, comprising a polytype selected from the group consisting of 4H SiC, 6H SiC and 3C SiC, by vapor deposition of the ultra pure polymer derived SiC; wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.38. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 4H SiC.39. The method of claim 37 , wherein the single crystal SiC structure consists essentially of 6H SiC.40. The method of claim 37 , wherein the single crystal SiC structure consists of 4H SiC.41. The method of claim 37 , wherein the single crystal SiC structure consists of 6H SiC.42. The method of claim 37 , wherein the combination of the first and the second liquids is a polysilocarb precursor formulation having a molar ratio of about 30% to 85% carbon claim 37 , about 5% to 40% oxygen claim 37 , and about 5% to 35% silicon.43. The method of claim 37 , wherein the single crystal SiC structure is a boule.44. The method of claim 37 , wherein the single crystal SiC is a layer.45. The method of claim 37 , wherein the single ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view. 13-. (canceled)4. A method for manufacturing a silicon carbide single crystal in which a growth container is surrounded by a heat-insulating material with a hole for temperature measurement provided in a top portion thereof , a seed crystal substrate is disposed at a center of an upper portion inside the growth container , a silicon carbide raw material is disposed at a lower portion of the growth container , and the silicon carbide raw material is sublimated to grow a silicon carbide single crystal on the seed crystal substrate , whereinto allow a position of a center of the hole for temperature measurement in the heat-insulating material to deviate from a position of a center of the seed crystal substrate disposed inside the growth container, the hole for temperature measurement is provided to deviate to a position on a periphery side relative to the center of the seed crystal substrate disposed inside the growth container,a silicon carbide single crystal substrate having a main surface tilted by an off angle from a {0001} plane which is a basal plane is used as the seed ...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>. 1 a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container; and', 'a convex-shaped end face of a grown ingot as a crystal growth surface, and, 'a substrate used as the seed crystal substrate comprisesa diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container.. A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate, wherein The present invention relates to a method for manufacturing silicon carbide in which a silicon carbide crystal is grown by a sublimation method.Recently, inverter circuits have been commonly used in electric vehicles and electric air-conditioners. This creates demands for semiconductor crystal of silicon carbide (hereinafter may also be referred to as SiC) because of the properties of less power loss and higher breakdown voltage in devices than those using semiconductor Si crystal.As a typical and practical method for growing a crystal with a high melting point or a crystal that is difficult to grow by liquid phase growth such as SiC ...

METHOD FOR PRODUCING GaN CRYSTAL

The present invention provides a novel method for producing a GaN crystal, the method including growing GaN from vapor phase on a semi-polar or non-polar GaN surface using GaCl3 and NH3 as raw materials. Provided herein is an invention of a method for producing a GaN crystal, including the steps of: (i) preparing a GaN seed crystal having a non-polar or semi-polar surface whose normal direction forms an angle of 85° or more and less than 170° with a [0001] direction of the GaN seed crystal; and (ii) growing GaN from vapor phase on a surface including the non-polar or semi-polar surface of the GaN seed crystal using GaCl3 and NH3 as raw materials.

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate. 117.-. (canceled)18. A method for growing single-crystal aluminum nitride (AlN) , the method comprising:providing a backing plate sized and shaped to receive an AlN seed;disposing an AlN seed and a substantially impervious foil on the backing plate with the foil between the AlN seed and the backing plate; anddepositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.19. The method of claim 18 , wherein the foil is substantially impervious to aluminum transport.20. The method of claim 19 , wherein the foil is substantially impervious to nitrogen.21. The method of claim 18 , wherein the foil is substantially impervious to nitrogen.22. The method of claim 18 , wherein the backing plate is substantially impervious to aluminum transport.23. The method of claim 18 , wherein a surface of the AlN seed facing the backing plate has a total thickness variance of less than 5 μm.24. The method of claim 18 , wherein a surface of the AlN seed facing the backing plate has a root mean square roughness less than 1 nm in a 10 μm×10 μm square area.25. The method of claim 18 , wherein providing the backing plate comprises exposing the backing plate to an Al vapor.26. The method of claim 18 , wherein the backing plate comprises multiple layers of grains claim 18 , at least some of which are swollen to inhibit diffusion therebetween.27. The method of claim 18 , wherein the backing plate consists essentially of a polycrystalline material.28. The method of claim 18 , wherein the backing plate is ...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface. 1. A light emitting device configured as a laser device , comprising:a semipolar III-nitride film including a light emitting device structure, wherein:the light emitting device structure includes a semipolar III-nitride active region grown on or above a surface of a nitride substrate, the surface oriented at a crystal angle θ from a c-plane of the nitride substrate, wherein 75°≦θ<90°; andan edge configured on the light emitting device structure for emission of light.2. The device of claim 1 , wherein the semipolar III-nitride film comprises a gallium and nitrogen material.3. The device of claim 1 , wherein the semipolar III-nitride active region is grown on or above a semipolar surface of the substrate comprising a free-standing gallium nitride (GaN) substrate claim 1 , the semipolar surface having a {20-21} orientation or offcut thereof.4. The device of claim 1 , wherein the light emitting device structure comprises a green light emitting semipolar diode.5. The device of claim 1 , wherein:a material property of the semipolar III-nitride active region is such that the device emits light in response to a drive current density of 278 Amps per centimeter square, andthe drive current density is direct current density.6. The device of ...

Self-aligned tunable metamaterials

A self-aligned tunable metamaterial is formed as a wire mesh. Self-aligned channel grids are formed in layers in a silicon substrate using deep trench formation and a high-temperature anneal. Vertical wells at the channels may also be etched. This may result in a three-dimensional mesh grid of metal and other material. In another embodiment, metallic beads are deposited at each intersection of the mesh grid, the grid is encased in a rigid medium, and the mesh grid is removed to form an artificial nanocrystal.

Defect reduction in seeded aluminum nitride crystal growth

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm −2 . Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRDIUM MATERIAL AND SUBSTRATE FOR EPITAXICALLY GROWING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL

A process for producing a monocrystalline layer of diamond or iridium material comprises transferring a monocrystalline seed layer of SrTiOmaterial onto a carrier substrate of silicon material, followed by epitaxial growth of the monocrystalline layer of diamond or iridium material. 1. A process for producing a monocrystalline layer of diamond material , comprising transferring a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of diamond material.2. The process of claim 1 , wherein the monocrystalline seed layer has a thickness of less than 10 μm claim 1 , preferably less than 2 μm claim 1 , and more preferably less than 0.2 μm.3. The process of claim 1 , wherein the transfer of the monocrystalline seed layer of SrTiOmaterial to the carrier substrate of silicon material comprises joining a monocrystalline substrate of SrTiOmaterial to the carrier substrate followed by thinning the monocrystalline substrate of SrTiOmaterial.4. The process of claim 3 , wherein the thinning step comprises forming a weakened zone delimiting a portion of the monocrystalline substrate of SrTiOmaterial to be transferred to the carrier substrate of silicon material.5. The process of claim 4 , wherein forming the weakened zone comprises implanting atomic and/or ionic species into the monocrystalline substrate of SrTiOmaterial.6. The process of claim 1 , wherein thinning the monocrystalline substrate of SrTiOmaterial comprises detaching at the weakened zone so as to transfer the portion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate of silicon material.7. The process of claim 3 , wherein joining the monocrystalline substrate of SrTiOmaterial to the carrier substrate comprises molecular adhesion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate.8. The process of claim 1 , wherein the monocrystalline seed layer of SrTiOmaterial is in the form of a ...

SiC WAFER AND MANUFACTURING METHOD OF SiC WAFER

In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density. 1. A SiC wafer , whereina difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.2. The SiC wafer according to claim 1 ,wherein the numbers of the threading dislocations of the first surface and the second surface are substantially the same.3. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein a density of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface is 1.5 threading dislocations/mmor less.'}4. The SiC wafer according to claim 1 ,{'sup': '2', 'wherein the difference between the threading dislocation density exposed on the first surface and the threading dislocation density exposed on the second surface is 0.02 threading dislocations/mmor less.'}5. A manufacturing method of a SiC wafer claim 1 , comprising:{'sup': '2', 'a preparation step of producing a seed crystal ...

MONOLITHIC INTEGRATED LATTICE MISMATCHED CRYSTAL TEMPLATE AND PREPARATION METHOD THEREOF

The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality. 1. A monolithic integrated lattice mismatched crystal template by using low-viscosity material , characterized in that , includes:a first crystal layer having a first lattice constant;a buffer layer located on the first crystal layer, the buffer layer melting and converting to an amorphous state above its melting point;a template layer located on the buffer layer and having a second lattice constant, which differs from the first lattice constant of the first crystal layer; the lattice of the template layer being fully relaxed in the growth at a temperature above the glass transition temperature of the buffer layer.2. The crystal template according to claim 1 , characterized in that claim 1 , further includes:a second crystal layer located ...

DOPED RARE EARTH NITRIDE MATERIALS AND DEVICES COMPRISING SAME

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices. 1. A magnesium-doped rare earth nitride material , wherein the rare earth nitride is selected from the group consisting of lanthanum nitride (LaN) , praseodymium nitride (PrN) , neodymium nitride (NdN) , samarium nitride (SmN) , europium nitride (EuN) , gadolinium nitride (GdN) , terbium nitride (TbN) , dysprosium nitride (DyN) , holmium nitride (HoN) , erbium nitride (ErN) , thulium nitride (TmN) , ytterbium nitride (YbN) , and lutetium nitride (LuN) , and alloys of any two or more thereof.2. (canceled)3. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has a resistivity of at least about 25 Ω.cm.4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. A magnesium-doped rare earth nitride material as claimed in claim 1 , comprising about 10-10atoms/cmof magnesium.17. A magnesium-doped rare earth nitride material as claimed in claim 1 , further comprising one or more additional dopant(s).18. (canceled)19. (canceled)20. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is ferromagnetic below about 70 K.21. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material has substantially the same XRD measurements as the undoped rare earth nitride.22. A magnesium-doped rare earth nitride material as claimed in claim 1 , wherein the magnesium-doped rare earth nitride material is a thin film.23. (canceled)24. (canceled)25. (canceled)26. ...

METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. 1. A metal oxide film comprising In , M (M is Al , Ga , Y , or Sn) , and Zn , wherein:the metal oxide film comprises a first crystal part and a second crystal part;the first crystal part has c-axis alignment; andthe second crystal part has no c-axis alignment.2. A metal oxide film comprising In , M (M is Al , Ga , Y , or Sn) , and Zn , wherein:the metal oxide film comprises a first crystal part and a second crystal part;the first crystal part has c-axis alignment;the second crystal part has no c-axis alignment; andan existing proportion of the second crystal part is higher than an existing proportion of the first crystal part.3. A metal oxide film comprising In , M (M is Al , Ga , Y , or Sn) , and Zn , wherein:the metal oxide film comprises a first crystal part and a second crystal part;the first crystal part has c-axis alignment;the second crystal part has no c-axis alignment;in the case where an electron diffraction pattern of the metal oxide film is observed by performing electron diffraction measurement on a cross section, a first region comprising a diffraction spot derived from the first crystal part; and', 'a second region comprising a diffraction spot derived from the second crystal part; and, 'the electron diffraction pattern comprisesan integrated intensity of luminance in the first region is higher than an integrated intensity of luminance in the second region.4. The metal oxide film according to claim 3 ,wherein the integrated intensity of luminance in the first region is more than one time and less than or equal to 40 times the integrated intensity of luminance in the second region.5. The metal oxide film according to claim 3 ,the ...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME

Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. 1. A silicon carbide single crystal substrate cut from a bulk silicon carbide single crystal grown by a physical vapor transport method , wherein an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is one-half of the substrate is not more than 80% of an average value of screw dislocation densities observed at a plurality of measurement points in one semicircular region which is the other one-half of the substrate.2. The silicon carbide single crystal substrate according to claim 1 , wherein the substrate has a main surface having an angle θof more than 0° and not more than 12° claim 1 , the angle θbeing formed by the normal penetrating center point O of the substrate and the [0001] direction; when two semicircular regions bounded by a diameter Rof the substrate are defined claim 1 , the diameter Rbeing perpendicular to ...

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 5 cm −2 . Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate. 1. A method for manufacturing SiC crystal to a grown volume , comprising:i. introducing a mixture comprising silicon chips into a reaction cell, the reaction cell being made of graphite and having cylindrical interior of internal volume in the range of from six to twelve times the grown volume of the SiC crystal;ii. placing a silicon carbide seed crystal inside the reaction cell adjacent to a lid of the reaction cell;iii. sealing the cylindrical reaction cell using the lid;iv. surrounding the reaction cell with graphite insulation;v. introducing the cylindrical reaction cell into a vacuum furnace;vi. evacuating the vacuum furnace;vii. filling the vacuum furnace with a gas mixture comprising inert gas to a pressure near atmospheric pressure;viii. heating the cylindrical reaction cell in the vacuum furnace to a temperature in the range from 1975° C. to 2500° C.;ix. reducing the pressure in the vacuum furnace to from 0.05 torr to less than 50 torr;{'sup': 2', '2, 'x. introducing source of carbon gas into the vacuum furnace and flowing nitrogen gas configured to introduce nitrogen donor concentration larger than 3E18/cm, and up to 6E18/cm; and,'}xi. allowing for sublimation of silicon and carbon species ...

METHOD FOR PRODUCING SINGLE CRYSTAL

A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal. 1. A method for producing a single crystal , comprising:a step of placing a source material powder and a seed crystal within a crucible; anda step of growing a single crystal on the seed crystal, a peripheral wall part being hollow and having openings at both ends,', 'a bottom part connected to the peripheral wall part to close one of the openings of the peripheral wall part, and', 'a lid part connected to the peripheral wall part to close the other one of the openings of the peripheral wall part and having a holder that holds the seed crystal,, 'wherein the crucible includes'}the bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal,in the step of placing the source material powder and the seed crystal within the crucible, the source material ...

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES

A single-crystalline LnBMOor LnBMOcompound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 0≦δ≦1. Methods of making and using the compound, and devices and compositions including same are also provided. 1. A single-crystalline LnBMOor LnBMOcompound , comprising an ordered oxygen vacancy structure; whereinLn is a lanthanide,B is an alkali earth metal,M is a transition metal,O is oxygen, and0≦δ≦1.2. The compound of claim 1 , wherein Ln is La claim 1 , Pr claim 1 , Nd claim 1 , Sm claim 1 , or Gd.3. The compound of claim 1 , wherein B is Ba claim 1 , Sr claim 1 , or Ca.4. The compound of claim 1 , wherein M is Co claim 1 , Mn claim 1 , Fe claim 1 , or Ni.5. The compound of claim 1 , wherein the compound has a double perovskite structure.6. A composition claim 1 , comprising the compound of in epitaxial contact with a single-crystalline substrate.7. The composition of claim 6 , wherein the substrate comprises Nb-doped SrTiO.8. A single-crystalline LnBMOor LnBMOcompound claim 6 , δ being ≧0 and ≦1 claim 6 , produced by a process comprising:forming, on a single-crystalline substrate, a thin film comprising Ln, B, M, and O, wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, and O is oxygen;annealing said thin film in an oxygen-containing gas, to form an oxygen-annealed film and cooling9. The compound of claim 8 , wherein forming said thin film comprises pulsed laser desorption of a target compound comprising Ln claim 8 , B claim 8 , M claim 8 , and O.10. The compound of claim 8 , wherein annealing said thin film in an oxygen-containing gas comprises beating said thin film at 800° C. in 400 Torr oxygen for 15 minutes.11. The compound of claim 8 , wherein annealing said oxygen-annealed film comprises heating said oxygen-annealed film at 800° C. at a pressure lower than 1*10Torr for 15 minutes.12. The compound of claim 8 , wherein ...

Electron Beam Heating and Atomic Surface Restructuring of Sapphire Surface

Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature. 1. A method for heating a wafer to support epitaxy film growth on the wafer , comprising:providing the wafer;heating the wafer with a radiative heating element;applying irradiation to the wafer with an electron beam until a surface of the wafer reaches a selected surface temperature for a selected duration; andgrowing the epitaxy film on the wafer after applying the irradiation.2. The method of claim 1 , wherein applying the irradiation comprises uniformly applying the irradiation.3. The method of claim 2 , wherein the selected surface temperature is from about 400° C. to about 500° C.4. The method of claim 3 , wherein the selected duration is from about 1 minute to about 2 minutes.5. The method of claim 4 , wherein the selected surface temperature is about 500° C. and the selected duration is about 2 minutes.6. The method of claim 3 , wherein the wafer comprises sapphire.7. The method of claim 6 , wherein the epitaxy film comprises SiGe claim 6 , CdTe claim 6 , or GaN.8. The method of claim 2 , further comprising rotating the wafer while applying the irradiation.9. A vacuum deposition system claim 2 , comprising:a growth chamber configured to support a wafer therein;a radiative heating element configured to heat the wafer; andan electron beam gun configured to irradiate a surface of the wafer with an electron beam until the surface reaches a selected surface temperature for a selected duration; anda ...

METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON

A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline AlO, is deposited on ordinary (soda-lime) glass via a textured MgO template. 1. A method of producing sapphire on glass , comprising:depositing an MgO film on glass; and{'sub': 2', '3, 'depositing AlOon said MgO film.'}2. The method of claim 1 , wherein said MgO film is crystalline.3. The method of claim 1 , wherein said AlOfilm is crystalline sapphire.4. The method of claim 1 , wherein said MgO film is deposited below about 600° C.5. The method of claim 1 , wherein the AlOfilm is single crystalline sapphire.6. The method of claim 1 , wherein said AlOis deposited below about 600° C.7. The method of claim 1 , wherein said glass is soda-lime.8. The method of claim 1 , wherein said glass is borosilicate.9. A method of depositing single crystalline semiconductors on sapphire glass below the softening temperature of ordinary glass.10. The method of claim 8 , wherein the semiconductor comprises Si claim 8 , Ge claim 8 , Ga claim 8 , or GaAs.11. The method of claim 8 , wherein said sapphire glass is a single crystalline sapphire substrate.12. The method of claim 8 , wherein said semiconductors are large grained.13. The method of where said sapphire glass is crystalline AlOnot single crystalline. U.S. Pat. No. 4,717,688 January 1987 Jaentsch . . . 148/171U.S. Pat. No. 5,326,719 July 1994 Green et al. . . . 427/74U.S. Pat. No. 5,544,616 August 1996 Ciszek et al. . . . 117/60U.S. Pat. No. 6,429,035 B2 August 2002 Nakagawa et al. . . . 438/57U.S. Pat. No. 6,784,139 B1 August 2004 Sankar et al. . . . 505/230Kass et al, Liquid Phase Epitaxy of Silicon: Potentialialities and Prospects“, Physica B, Vol 129, 161 (1985)Massalski et al, “Binary Alloy Phase Diagrams”, 2edition, (1990), ASM InternationalFindikoglu et al, “Well-oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates”, Adv. Materials, Vol 17, 1527, (2005)Teplin et al ...

MBE SYSTEM WITH DIRECT EVAPORATION PUMP TO COLD PANEL

An MBE system is disclosed for eliminating the excess flux in an MBE growth chamber before growth, during growth or growth interruption, and/or after growth by evaporating getter material from an effusion evaporator to the cold panel. The cold panel can be the cryopanel of the MBE growth chamber or a cold panel in an attached chamber. Said MBE system includes the cyropanel in the MBE growth chamber or a cold panel in the chamber attached to the MBE growth chamber. With a proper process such as cooling the cold panel, loading a substrate for the MBE process, providing necessary flux for the MBE growth, heating the effusion evaporator and opening the shutter for the evaporator to get the getter material flux onto the said panel, the excess flux will be eliminated. The cross contamination of the grown layer is then avoided. 1. A molecular beam epitaxy system , comprising:a growth chamber,a sample manipulator mounted inside the growth chamber for holding a sample for epitaxial growth onto the sample, anda source for supplying a flux of a growth material to the sample, wherein the molecular beam epitaxy system further comprises:a cold panel, andan effusion evaporator for supplying a flux of a getter material to the cold panel.2. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is mounted inside the growth chamber or an auxiliary chamber that is connected to the growth chamber.3. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is made of stainless steel.4. The molecular beam epitaxy system according to claim 1 , wherein the cold panel is a cryopanel of the molecular beam epitaxy system.5. The molecular beam epitaxy system according to claim 1 , wherein the effusion evaporator comprises a filament for heating and a crucible for a plurality of getter materials.6. The molecular beam epitaxy system according to claim 1 , wherein the effusion evaporator is arranged to supply the getter material at a beam equivalent ...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

A silicon carbide wafer is provided, wherein within a range area of 5 mm from an edge of the silicon carbide wafer, there are no low angle grain boundaries formed by clustering of basal plane dislocation defects, and the silicon carbide wafer has a bowing of less than 15 μm. 1. A silicon carbide wafer , wherein within a range area of 5 mm from an edge of the silicon carbide wafer , there are no low angle grain boundaries formed by clustering of basal plane dislocation defects , and the silicon carbide wafer has a bowing of less than 15 μm.2. The silicon carbide wafer as claimed in claim 1 , wherein the silicon carbide wafer has a warping of less than 30 μm.3. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 10 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 7% of the range area.4. The silicon carbide wafer as claimed in claim 3 , wherein within the range area of 10 mm from the edge of the silicon carbide wafer claim 3 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.5. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 15 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 10% of the range area.6. The silicon carbide wafer as claimed in claim 5 , wherein within the range area of 15 mm from the edge of the silicon carbide wafer claim 5 , there are no low angle grain boundaries formed by the clustering of the basal plane dislocation defects.7. The silicon carbide wafer as claimed in claim 1 , wherein within a range area of 20 mm from the edge of the silicon carbide wafer claim 1 , the low angle grain boundaries formed by the clustering of the basal plane dislocation defects are less than 30% of the range area.8. The silicon ...

LUMINESCENT HYPERBOLIC METASURFACES

Techniques, systems, and devices are disclosed for implementing light-emitting hyperbolic metasurfaces. In one exemplary aspect, a light-emitting device includes a surface; a plurality of quantum heterostructures positioned on the surface, each of the plurality of quantum heterostructures including multiple quantum wells distributed along an axis perpendicular to the surface and separated by multiple quantum barriers, wherein each two adjacent quantum heterostructures of the plurality quantum heterostructures form a gap; and a monocrystalline material at least partially filling gaps between the plurality quantum heterostructures. 1. A semiconductor device , comprising:a substrate; and a plurality of quantum heterostructures, each of the plurality of quantum heterostructures including multiple quantum wells that are separated by multiple quantum barriers, wherein each of the plurality of quantum heterostructures is separated from another quantum heterostructure by a gap; and', 'a monocrystalline material at least partially filling the gap between each of the plurality quantum heterostructures., 'luminescent hyperbolic metasurfaces (LuHMS) including2. The device of claim 1 , wherein the substrate includes indium phosphide.3. The device of claim 1 , wherein the multiple quantum barriers include indium gallium arsenide phosphide.4. The device of claim 1 , wherein the multiple quantum wells include indium gallium arsenide phosphide.5. The device of claim 1 , wherein the monocrystalline material includes silver.6. The device of claim 1 , wherein each of the plurality of quantum heterostructures has a shape of a pillar.7. The device of claim 1 , wherein each of the plurality of quantum heterostructures has a height between 100 to 300 nm and a width between 40 to 80 nm.8. The device of claim 1 , wherein the gap has a width between 10 to 40 nm.9. The device of claim 1 , wherein the plurality of quantum heterostructures and the monocrystalline material form a periodic ...

METHOD FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide , comprising: a crucible having an upper region, a lower region, and one or more vent holes,', 'a crucible cover sealing the crucible,', 'a substantially solid silicon carbide precursor contained within a source module that is positioned in the lower region of the crucible, wherein the source module is removable from the crucible,', 'a stand-alone seed module, removable from the crucible, that, when suspended in the upper region of the crucible, forms a space between the crucible cover and an entire top surface of an upper section of a seed holder of the seed module, the seed module having a plurality of vapor release openings and a silicon carbide seed disposed within the seed holder, wherein the plurality of vapor release openings are formed in the seed holder below a bottom surface of the silicon carbide seed as a plurality of holes around a center axis that is perpendicular to the bottom surface of the silicon carbide seed, and', 'a vapor release ring having one or more holes, wherein at least one of the one or more holes of the vapor release ring is aligned with at least one of the one or more vent holes of the crucible;, 'providing a sublimation furnace comprising a furnace shell, at least one heating element positioned ...

Method for producing a single-crystal film of aln material and substrate for the epitaxial growth of a single-crystal film of aln material

A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC- 6 H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.

Synthesis and processing of novel phase of carbon (q-carbon)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Synthesis and processing of q-carbon, graphene, and diamond

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

SYNTHESIS AND PROCESSING OF NOVEL PHASE OF BORON NITRIDE (Q-BN)

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite. 1. Q-BN.2. A method comprising:melting boron nitride into an undercooled state by a laser pulse in an environment at ambient temperature and pressure; andquenching the undercooled boron nitride from the undercooled state to create Q-BN.3. The method of claim 2 , wherein the boron nitride is hexagonal boron nitride.4. The method of claim 2 , wherein the melting comprises nanosecond pulsed laser melting at ambient temperatures and atmospheric pressure in air.5. The method of claim 2 , further comprising:melting the Q-BN; andquenching the melted Q-BN to create cubic boron nitride.6. The method of claim 4 , further comprising:depositing diamond on the cubic boron nitride by pulsed laser deposition of carbon to create a cubic boron nitride and diamond heterostructure, the cubic boron nitride acting as a template for epitaxial diamond growth.7. The method of claim 2 , wherein the quenching the melted Q-BN includes quenching the melted Q-BN to create phase-pure cubic boron nitride.8. The method of claim 2 , further comprising:before the melting, depositing the boron nitride as a film on a substrate at room temperature.9. The method of claim 8 , wherein the substrate is tungsten carbide claim 8 , silicon claim 8 , sapphire claim 8 , glass claim 8 , or a polymer.10. The method of claim 2 , wherein the created cubic boron nitride is a nanodot claim 2 , microcrystal claim 2 , nanoneedle claim 2 , microneedle or large area single crystal film.11. The method of claim 9 , including using the substrate ...

DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF APPLICATIONS

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite. 1. A process comprising:melting hexagonal boron nitride into an undercooled state by a laser pulse in an environment at ambient temperature and pressure; andquenching the undercooled hexagonal boron nitride to create cubic boron nitride.2. The process of claim 1 , wherein the quenching includes quenching the undercooled hexagonal boron nitride to phase-pure cubic boron nitride.3. The process of claim 1 , further comprising:depositing a film of the hexagonal boron nitride on a substrate and using the substrate as a template for epitaxial growth.4. The process of claim 1 , wherein the created cubic boron nitride is a nanodot claim 1 , microcrystal claim 1 , nanoneedle claim 1 , microneedle claim 1 , or large area single crystal film.5. The process of claim 3 , wherein the substrate is tungsten carbide claim 3 , silicon claim 3 , copper claim 3 , sapphire claim 3 , glass claim 3 , or a polymer.6. The process of claim 1 , the melting comprising melting the hexagonal boron nitride in an undercooled state by a laser pulse in an environment at ambient temperature and pressure.7. A process comprising:depositing a film of hexagonal boron nitride on a substrate by laser pulse deposition;melting a first portion of the hexagonal boron nitride film into an undercooled state by a first laser pulse in an environment at ambient temperature and pressure;quenching the melted first portion of the hexagonal boron nitride film from the undercooled state to create a first cubic boron nitride portion;moving the ...

METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS

A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components. 1. An apparatus for forming a stressor layer on a substrate , comprising:a rotatable substrate support disposed in an enclosure;a plurality of gas inlets formed in a first wall of the enclosure;at least one gas outlet formed in a second wall of the enclosure;a reactive precursor source coupled to a gas inlet by a first conduit;a non-reactive precursor source coupled to a gas inlet by a second conduit; andan exhaust system comprising a condensation trap.2. The apparatus of claim 1 , wherein at least one gas inlet of the plurality of gas inlets is formed in the first wall of the enclosure near the rotatable substrate support.3. The apparatus of claim 1 , wherein the exhaust system further comprises jacketed piping and valves.4. The apparatus of claim 3 , wherein the exhaust system further comprises a vacuum pump and the jacketed piping ends at an inlet of the vacuum pump.5. The apparatus of claim 3 , wherein the exhaust system further comprises an adhesion reducing coating.6. The apparatus of claim 1 , wherein the reactive precursor source is coupled to a metal halide source.7. The apparatus of claim 1 , wherein the non-reactive precursor source is a germanium hydride source.8. The apparatus of claim 1 , further comprising a metal precursor contact chamber coupled with the first conduit claim 1 , wherein the contact chamber contains a bed of solid metal or metal halide crystals.9. The apparatus of ...

Conversion of boron nitride into n-type and p-type doped cubic boron nitride and structures

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE

In accordance with an embodiment, a method for manufacturing a semiconductor component includes providing a semiconductor material having a surface, forming an epitaxial layer of carbon doped semiconductor material on the semiconductor substrate, the epitaxial layer having a surface, forming a nucleation layer on the epitaxial layer; and forming a layer of III-nitride material on the nucleation layer. In accordance with another embodiment, the semiconductor component includes a silicon semiconductor substrate of a first conductivity type; a carbon doped epitaxial layer on the silicon semiconductor substrate; a buffer layer over the carbon doped buffer layer; and a channel layer on the buffer layer. 1. A method for manufacturing a semiconductor component , comprising:providing a semiconductor material having a surface;forming an epitaxial layer of carbon doped semiconductor material on the semiconductor substrate, the epitaxial layer having a surface;forming a nucleation layer on the epitaxial layer; andforming a layer of III-nitride material on the nucleation layer.2. The method of claim 1 , wherein forming the epitaxial layer comprises epitaxially growing carbon doped silicon as the epitaxial layer claim 1 , wherein the epitaxially grown carbon doped silicon comprises substitutional carbon.3. The method of claim 2 , wherein forming the epitaxial layer comprises epitaxially growing carbon doped silicon having a 100% substitutional carbon concentration.4. The method of claim 1 , wherein forming the epitaxial layer comprises epitaxially growing carbon doped silicon having a carbon concentration ranging from 0.01% to 49.99%.5. The method of claim 1 , wherein forming the epitaxial layer of carbon doped semiconductor material on the semiconductor substrate includes doping with epitaxial layer with carbon having a graded concentration profile.6. The method of claim 5 , wherein the graded concentration profile of the carbon extends a first distance into the epitaxial layer ...

DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth by physical vapor transport. High rates of diameter expansion during growth may be enabled by the use of internal thermal shields and directed plasma-modification of the growth environment to augment radial thermal gradients and increase radial growth rates. 1. A method of forming single-crystal aluminum nitride (AlN) , the method comprising:providing within a growth chamber a seed crystal having a growth face comprising AlN;establishing a radial thermal gradient and an axial thermal gradient within the growth chamber;condensing vapor comprising aluminum and nitrogen within the growth chamber, thereby forming on the growth face of the seed crystal an AlN single crystal that (a) increases in length along a growth direction in response to the axial thermal gradient and (b) expands in diameter along a radial direction substantially perpendicular to the growth direction in response to the radial thermal gradient; andthereduring, increasing a lateral growth rate of the AlN single crystal to increase a rate of the diameter expansion of the AlN single crystal.2. The method of claim 1 , wherein establishing the radial thermal gradient and the axial thermal gradient within the growth chamber comprises claim 1 , at least in part claim 1 , (i) heating the growth chamber and (ii) configuring a plurality of thermal shields outside of the growth chamber.3. The method of claim 1 , wherein increasing the lateral growth rate of the AlN single crystal comprises enhancing the vapor with atomic nitrogen proximate an edge portion of the AlN single crystal.4. The method of claim 3 , wherein enhancing the vapor with atomic nitrogen comprises (i) introducing nitrogen gas proximate the edge portion of the AlN single crystal and (ii) generating a plasma proximate the edge portion of the AlN single crystal with the nitrogen gas.5. The method of claim 1 , wherein increasing the lateral growth ...

FABRICATION OF A TRANSISTOR WITH A CHANNEL STRUCTURE AND SEMIMETAL SOURCE AND DRAIN REGIONS

A vertical channel transistor comprising: a structure made of a given bismuth-based material which passes through a gate block where the structure comprises a channel region which extends through the gate block and source and drain regions on either side of the channel region and of the gate block, where the source and drain regions have a cross-section which is greater than the cross-section of the channel region (). 1. A method comprising:formation of a stack comprising a first transistor source or drain contact zone and a first layer on this first contact zone,formation on this stack of a gate block and of a second layer on this gate block,formation of at least one hole passing through the second layer, the gate block and the first layer so as to reveal the first contact zone, the hole being made so as to have a first portion and a second portion in the first layer and the second layer respectively, each having a larger cross-section than that of a third portion of the hole located in the gate block, the formation of the first portion and of the second portion of larger cross-section than the third portion being achieved by selective etching of the first layer and of the second layer in relation to the gate block,filling the hole using a given semimetal based material such as bismuth, so as to form a source or drain region in the first portion, a channel region in the third portion, a drain or source region in the second portion, where the channel region has a cross-section which is smaller than that of the source and drain regions.2. The method according claim 1 , moreover comprising after the formation of the hole and before filling the hole using the given material: the formation of a gate dielectric in the hole and on the gate block by at least one oxidation of the gate block.3. The method according to claim 2 , where the first contact zone is based on a material which is insensitive to oxidation of the gate block claim 2 , in particular a noble metal such as ...

Semiconductor Material Having a Compositionally-Graded Transition Layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. 115-. (canceled)16. A semiconductor material , comprising:a compositionally-graded transition layer having a back surface and a top surface, the compositionally-graded transition layer comprising a gallium nitride alloy, wherein a gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface;an intermediate layer formed under the compositionally-graded transition layer; and{'sup': '2', 'a gallium nitride material layer formed over the compositionally-graded transition layer, the gallium nitride material layer having a crack level of less than 0.005 μm/μm.'}17. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded continuously across the thickness of the transition layer.18. The semiconductor material of claim 16 , wherein the composition of the compositionally-graded transition layer is graded discontinuously across the thickness of the transition layer.19. The semiconductor material of claim 16 , wherein the compositionally-graded transition layer comprises an alloy of gallium nitride selected from ...

SYNTHESIS AND USE OF MATERIALS FOR ULTRAVIOLET FIELD-EMISSION LAMPS

Processes for synthesizing the hexagonal polymorph of boron nitride (h-BN) produce h-BN of a grade that is highly suitable for ultraviolet (UV) field-emission lights and other UV applications. 1. An article of manufacture comprising hexagonal boron nitride (h-BN) , wherein the h-BN is manufactured by a process comprising:{'sup': '−6', 'claim-text': generating particles comprising boron from a source comprising boron, wherein the source is inside the high-vacuum chamber;', 'receiving the particles generated from the source at a substrate that is inside the high-vacuum chamber; and', 'forming the h-BN on the substrate, the h-BN comprising the particles received from the source; and, 'inside a high-vacuum chamber that is at a pressure of less than 10Torrwherein the h-BN manufactured by the process has an emission spectrum comprising a first luminescence peak at a wavelength less than 230 nanometers (nm) and a second luminescence peak at a wavelength greater than 230 nm, and wherein the first luminescence peak is greater than the second luminescence peak by a ratio of at least 30-to-one.2. The article of manufacture of claim 1 , wherein the process comprises controlling the pressure inside the high-vacuum chamber in a range between 10Torr and 10Torr.3. The article of manufacture of claim 1 , wherein the process further comprises heating the substrate to a temperature greater than 700 degrees-Celsius (° C.) and not greater than 1500° C.4. The article of manufacture of claim 1 , wherein the boron in the source is ultra-high purity greater than 99.9 percent.5. The article of manufacture of claim 1 , wherein the process further comprises receiving claim 1 , at the substrate claim 1 , nitrogen from a nitrogen plasma source.6. The article of manufacture of claim 1 , wherein the process further comprises introducing claim 1 , into the high-vacuum chamber claim 1 , a mixture of gases comprising nitrogen.7. The article of manufacture of claim 1 , wherein the process further ...

METAL STRIP OR SHEET HAVING A CHROMIUM-NITRIDE COATING, BIPOLAR PLATE AND ASSOCIATED MANUFACTURING METHOD

The present invention relates to a metal strip or sheet comprising a substrate made from stainless steel covered with at least one layer of a chromium-nitride coating. The chromium-nitride coating layer is textured. 1. A metal strip or sheet comprising a substrate made from stainless steel covered with at least one layer of a chromium-nitride based coating wherein the chromium-nitride based coating layer is textured.2. The strip or sheet according to claim 1 , wherein the coating layer has an epitaxial relationship with the substrate.3. The strip or sheet according to claim 1 , wherein the chromium-nitride based coating layer is obtained using a physical vapor deposition method.4. The strip or sheet according claim 1 , wherein the chromium-nitride based coating layer is formed directly on the stainless steel substrate without interposition of a passive layer.5. The strip or sheet according to claim 1 , wherein the substrate has a thickness comprised between 75 micrometers and 200 micrometers.6. The strip or sheet according to claim 1 , wherein the grains of the substrate have a size strictly smaller than 50 micrometers.7. The strip or sheet according to claim 1 , wherein the coating layer has a columnar structure.8. The strip or sheet according to claim 1 , wherein the coating layer optionally comprises oxygen claim 1 , said coating layer being obtained by physical vapor deposition (PVD) claim 1 , characterized in that the coating layer has claim 1 , on its surface claim 1 , a surface zone comprising an atomic oxygen content strictly lower than its atomic nitrogen content.9. The metal strip or sheet according to claim 8 , wherein the surface zone has a height smaller than or equal to 15% of the total thickness of the coating layer.101. The metal strip (′) or sheet according to one of claims 8 , wherein the coating layer comprises claims 8 , at the interface with the substrate claims 8 , an interface zone comprising an atomic oxygen content strictly lower than its ...

SILICON WAFER AND MANUFACTURING METHOD THEREOF

A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process. 1. A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature ranges from 1050° C. to the melting point of silicon and of which the temperature rising and falling rate ranges from 150° C./sec to 10000° C./sec , the method comprising:{'sup': 17', '17', '3, 'an epitaxial process of causing an epitaxial layer to grow on the surface of a substrate, which is doped with boron so as to have resistivity of 0.02 Ωcm to 1 kΩcm and of which the initial oxygen concentration Oi is in the range of 14.0×10to 22×10atoms/cm(Old-ASTM; ASTM F 121, 1970-1979 published by American Society for Testing and Materials International); and'}an oxygen precipitation nuclei dissolution process of treating a wafer in the treatment temperature range of 1150° C. to 1300° C., the retention time range of 5 sec to 1 min, and the temperature-falling rate range of 10° C./sec to 0.1° C./sec,wherein the oxygen precipitation nuclei dissolution process is performed before or after the epitaxial process,the thermal treatment process is applied to only an outermost surface layer of the silicon epitaxial wafer, and{'sup': 4', '2, 'the oxygen precipitates density is equal to or less than 5×10pcs/cmin the silicon epitaxial wafer.'}2. A method of manufacturing a silicon epitaxial wafer which is provided to a semiconductor device manufacturing process having a thermal treatment process of which the highest temperature ranges from 1050° C. to the melting point of silicon and of which the temperature ...

DEPOSITION FILM FORMING APPARATUS INCLUDING ROTARY MEMBER

Disclosed is a deposition film forming apparatus including a plurality of rotary members. The deposition film forming apparatus includes a plurality of rotary members arranged on each substrate support in which the plurality of rotary members are configured to rotate a plurality of substrates, respectively. Each of the rotary members is rotated on the substrate support by a gas-foil method, and a cover is provided on a portion on the substrate support, other than portions where the plurality of rotary members are positioned. A gap is formed between the substrate supports and the cover to allow a predetermined gas used in the gas foil method to be discharged therethrough. 1. A deposition film forming apparatus , the apparatus comprising:a plurality of substrate supports,wherein a plurality of rotary members are arranged on each of the substrate supports, the plurality of rotary members being configured to rotate a plurality of substrates, respectively,each of the rotary members is rotated on the substrate support by means of a gas-foil method,a cover is provided on a portion on the substrate support, except where the plurality of rotary members are positioned, anda gap is formed between the substrate supports and the cover to allow a predetermined gas used in the gas-foil method to be discharged therethrough.2. The apparatus of claim 1 , wherein each of the plurality of substrate supports is configured to be rotatable.3. The apparatus of claim 1 , wherein top surfaces of the plurality of rotary members have the same height as top surface of the cover.4. The apparatus of claim 1 , wherein a plurality of gap formation members are disposed on the substrate supports to form a gap between the substrate supports and the cover.5. The apparatus of claim 1 , wherein a protrusion is formed in each of a plurality of portions on the substrate support where the plurality of rotary members are positioned claim 1 , andeach of the plurality of rotary members are configured to rotate ...

SILICON CARBIDE CRYSTAL

A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer. 1. A silicon carbide crystal , comprising a seed layer , a bulk layer , and a stress buffering structure formed between the seed layer and the bulk layer , wherein the seed layer , the bulk layer , and the stress buffering structure are each formed with a dopant , and the dopant of the stress buffering structure cycles between high and low dopant concentrations;characterized in that the stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers, wherein the buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.2. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a thickness that is greater than 0 μm and less than 0.1 μm.3. The silicon carbide crystal of claim 2 , wherein the stress buffering structure has a thickness that is less than 0.1 mm.4. The silicon carbide crystal of claim 1 , wherein each of the buffer layers has a dopant concentration gradient in its thickness direction.5. The silicon carbide crystal of claim 4 , wherein the dopant of the seed layer has a reference concentration claim 4 , and the ...

METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF GAAS MATERIAL AND SUBSTRATE FOR EPITAXIAL GROWTH OF A MONOCRYSTALLINE LAYER OF GAAS MATERIAL

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material. 1. A process for producing a monocrystalline layer of GaAs material , comprising: transferring a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material , followed by epitaxial growth of the monocrystalline layer of GaAs material.2. The process of claim 1 , wherein the monocrystalline seed layer has a thickness of less than 10 μm.3. The process of claim 2 , wherein the transfer of the monocrystalline seed layer of SrTiOmaterial to the carrier substrate of silicon material comprises joining a monocrystalline substrate of SrTiOmaterial to the carrier substrate claim 2 , followed thinning the monocrystalline substrate of SrTiOmaterial.4. The process of claim 3 , wherein the thinning of the monocrystalline substrate of SrTiOmaterial comprises forming a weakened zone delimiting a portion of the monocrystalline substrate of SrTiOmaterial to be transferred to the carrier substrate of silicon material.5. The process of claim 4 , wherein the formation of the weakened zone comprises implanting atomic and/or ionic species into the monocrystalline substrate of SrTiOmaterial.6. The process of claim 4 , wherein the thinning of the monocrystalline substrate of SrTiOmaterial comprises detaching at the weakened zone so as to transfer the portion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate of silicon material.7. The process of claim 3 , wherein the joining of the monocrystalline substrate of SrTiOmaterial to the carrier substrate comprises molecular adhesion of the monocrystalline substrate of SrTiOmaterial to the carrier substrate.8. The process of claim 1 , wherein the monocrystalline seed layer of SrTiOmaterial is in a form of a plurality of tiles each transferred to the ...

Epitaxial Growth Using Atmospheric Plasma Preparation Steps

After CMP and before an epitaxial growth step, the substrate is prepared by an atmospheric plasma which includes not only a reducing chemistry, but also metastable states of a chemically inert carrier gas. This removes residues, oxides, and/or contaminants. Optionally, nitrogen passivation is also performed under atmospheric conditions, to passivate the substrate surface for later epitaxial growth. 1. A process for epitaxial growth of a crystalline thin film on a crystalline substrate , comprising the steps of:a) forming an atomically ordered crystalline surface on the crystalline substrate;b) flowing an activated gas mixture, which contains activated metastable states of a noble gas as well as one or more unstable reactive chemical species, through a glow discharge and downstream onto the surface of the crystalline substrate under atmospheric pressure, to thereby remove residues and/or oxidation from the ordered crystalline surface without disturbing the atomic order of the crystalline surface;c) enclosing the crystalline substrate in a reaction vessel which is not open to the atmosphere, and depositing a layer of a crystalline material onto the ordered crystalline surface, as a crystalline extension of the substrate crystallinity.2. The method of claim 1 , further comprising performing said forming step by CMP.3. The method of claim 1 , further comprising performing said flowing step at approximately room temperature.4. The method of claim 1 , further comprising passivating the ordered crystalline surface between said flowing step and said enclosing step.5. A system which automatically performs step b) of .6. A process for epitaxial growth of a crystalline thin film on a crystalline substrate claim 1 , comprising the steps of:a) forming an atomically ordered crystalline surface on the crystalline substrate;b) flowing an activated gas mixture, which contains activated metastable states of a noble gas as well as one or more unstable reducing chemical species, ...

SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENT

A method for manufacturing a SiC fluorescent material, which includes growing the SiC fluorescent material in a hydrogen-containing atmosphere by a sublimation method in the manufacture of the SiC fluorescent material, the SiC fluorescent material including a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein, wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure. 1. A method for manufacturing a SiC fluorescent material , which comprises growing the SiC fluorescent material in a hydrogen-containing atmosphere by a sublimation method in the manufacture of the SiC fluorescent material , the SiC fluorescent material comprising a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site , and a donor impurity and an acceptor impurity added therein ,wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure.2. A light emitting element comprising:a SiC substrate including a SiC fluorescent material, the SiC fluorescent material comprising a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein,wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure; anda nitride semiconductor layer formed on the SiC substrate. The present application is a Divisional Application of U.S. patent application ...

DEVICE FOR GROWING MONOCRYSTALLINE CRYSTAL

A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material. 1. A device for growing monocrystalline crystals , comprising:a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region;a thermally insulating material disposed outside the crucible and below a heat dissipation component; anda plurality of heating components disposed outside the thermally insulating material to provide heat sources,wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.2. The device of claim 1 , wherein the crucible is a graphite crucible.3. The device of claim 1 , wherein the heat dissipation inner diameter equals one of 10˜250 mm and 1%-85% of an outer diameter of an upper portion of the crucible.4. The device of claim 1 , wherein the heat dissipation height equals 5˜200 mm.5. The device of claim 1 , wherein the heat dissipation component is made of one of a porous claim 1 , thermally insulating carbon material claim 1 , a graphite claim 1 , and a graphite felt.6. The device of claim 1 , wherein the thermally insulating material is a graphite felt.7. The device of claim 1 , wherein the material source region contains the material source.8. The device of claim 1 , wherein the material source is ...

Fe-Co-Si ALLOY MAGNETIC THIN FILM

An Fe—Co—Si alloy magnetic thin film contains, in terms of atomic ratio, 20% to 25% Co and greater than 0% to 20% Si. The Fe—Co—Si alloy magnetic thin film primarily has a body-centered cubic crystal structure. Among three <100> directions of the crystal structure, one of the three <100> directions is perpendicular to a substrate surface and the other two <100> directions are parallel to the substrate surface. The Fe—Co—Si alloy magnetic thin film deposited onto MgO (100) has suitable magnetic properties, that is, a high magnetization of 1100 to 1725 emu/cc, a coercive force of less than 95 Oe, and an effective damping parameter of less than 0.001. 1. An Fe—Co—Si alloy magnetic thin film comprising , in terms of atomic ratio:20% to 25% Co; andgreater than 0% to 20% Si,the Fe—Co—Si alloy magnetic thin film comprises a body-centered cubic crystal structure,wherein, among three <100> directions of the crystal structure, one of the three <100> directions is perpendicular to a substrate surface and the other two <100> directions are parallel to the substrate surface.2. The Fe—Co—Si alloy magnetic thin film of claim 1 , wherein the Fe—Co—Si alloy magnetic thin film consists essentially of a body-centered cubic crystal structure.3. The Fe—Co—Si alloy magnetic thin film of claim 1 , wherein the Fe—Co—Si alloy thin film is grown on a MgO single crystal substrate with (100) surface.4. The Fe—Co—Si alloy magnetic thin film of claim 2 , wherein the Fe—Co—Si alloy thin film is grown on a MgO single crystal substrate with (100) surface. The present disclosure relates to a soft magnetic material used in a high-frequency range that covers the gigahertz range and specifically to an iron (Fe)-cobalt (Co)-silicon (Si)-based magnetic thin film having a large magnetization, a low effective damping parameter, and a small coercive force.With increases in capacity and speed provided by communication technologies, magnetic materials used for producing electronic components, such as ...

Directional solidification method and system

The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR ELEMENT PRODUCTION METHOD

A nitride semiconductor light-emitting element contains an AlN layer having a crystalline quality within a predetermined range and an n-type AlGaN formed atop the AlN layer and having a predetermined Al composition ratio formed atop the AlN layer In addition, as the crystalline quality falling within the predetermined range, the AlN layer has a crystalline quality corresponding to an X-ray rocking curve half-width of 350 to 520 (arcsec vis-à-vis a (10-12) surface. As the predetermined Al composition ratio, the n-type AlGaN has an Al composition ratio of 40% to 70%. 1. A nitride semiconductor element , comprising:an AlN layer having a crystalline quality within a predetermined range; andan n-type AlGaN formed above the AlN layer and having a predetermined Al composition ratio,wherein an n-AlGaN mix value that is a full width at half maximum of an X-ray rocking curve for a (10-12) plane of the n-type AlGaN is not more than a specified value, andwherein the AlN layer is formed such that an AlN mix value that is a full width at half maximum of an X-ray rocking curve for a (10-12) plane of the AlN layer is more than a specified value based on relation between the AlN mix value and the n-AlGaN mix value.2. The nitride semiconductor element according to claim 1 , wherein the crystalline quality of the AlN layer is a crystalline quality corresponding to the AlN mix value of 350 to 520 (arcsec) claim 1 , and the predetermined Al composition ratio in the n-type AlGaN is an Al composition ratio of 40% to 70%.3. The nitride semiconductor element according to claim 2 , wherein the crystalline quality of the AlN layer is a crystalline quality corresponding to the AlN mix value of 380 to 520 (arcsec) claim 2 , and the predetermined Al composition ratio in the n-type AlGaN is an Al composition ratio of 40% to 60%.4. The nitride semiconductor element according to claim 3 , wherein the crystalline quality of the AlN layer is a crystalline quality corresponding to AlN mix value of 410 ...

METHOD FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; and', 'd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor,, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor, andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the substantially solid silicon carbide precursor is contained within a source module and wherein the source module is positioned in the lower region of the crucible.3. The method of claim 2 , wherein the source module comprises a precursor chamber and wherein the ...

METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE USING A SILICON CARBIDE SEED

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a silicon carbide precursor positioned in the lower region of the crucible; and', 'd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor mixture,, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the silicon carbide precursor; andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the seed module comprises a seed holder having at least one vapor release opening claim 1 , and the silicon carbide seed is positioned within the seed holder.3. The method of claim 2 , wherein the seed holder comprises a plurality of vapor release openings.4. The method of claim 3 , wherein the seed ...

METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE FROM A SILICON CARBIDE PRECURSOR

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A method of forming silicon carbide comprising the steps of a) a crucible having an upper region and a lower region;', 'b) a crucible cover sealing the crucible;', 'c) a substantially solid silicon carbide precursor mixture comprising silicon carbide positioned in the lower region of the crucible, wherein the substantially solid silicon carbide precursor mixture is prepared by heating a particulate mixture comprising silicon particles and carbon particles; and', 'd) a silicon carbide seed positioned in the upper region of the crucible, the silicon carbide seed having a top surface and a bottom surface, the bottom surface facing the substantially solid silicon carbide precursor mixture;, 'i) providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation, the hot zone comprising'}ii) heating the hot zone with the heating element to sublimate the substantially solid silicon carbide precursor mixture; andiii) forming silicon carbide on the bottom surface of the silicon carbide seed.2. The method of claim 1 , wherein the substantially solid silicon carbide precursor mixture is contained within a source module and wherein the source ...

APPARATUS FOR PRODUCING BULK SILICON CARBIDE

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. 1. A sublimation furnace for forming silicon carbide comprising a furnace shell , at least one heating element positioned outside the furnace shell , and a hot zone positioned inside the furnace shell surrounded by insulation , the hot zone comprisinga) a crucible having an upper region and a lower region;b) a crucible cover sealing the crucible;c) a substantially solid silicon carbide precursor positioned in the lower region of the crucible; andd) a seed module positioned in the upper region of the crucible, the seed module comprising a silicon carbide seed having a top surface and a bottom surface exposed to the upper region of the crucible, the bottom surface facing the substantially solid silicon carbide precursor.2. The sublimation furnace of claim 1 , wherein the substantially solid silicon carbide precursor is contained within a source module and wherein the source module is positioned in the lower region of the crucible.3. The sublimation furnace of claim 2 , wherein the source module comprises a precursor chamber and wherein the substantially solid silicon carbide precursor is contained within the precursor chamber.4. The sublimation furnace of claim 1 , wherein the substantially solid silicon carbide precursor is porous.5. The sublimation furnace of claim 4 ...

Fabrication Method for Multi-junction Solar Cells

A fabrication method for high-efficiency multi junction solar cells, including: providing a Ge substrate for semiconductor epitaxial growth; growing an emitter region over the Ge substrate (as the base) to form a first subcell with a first band gap; forming a second subcell with a second band gap larger than the first band gap and lattice matched with the first subcell over the first subcell via MBE; forming a third subcell with a third band gap larger than the second band gap and lattice matched with the first and second subcells over the second subcell via MOCVD; and forming a fourth subcell with a fourth band gap larger than the third band gap and lattice matched with the first, second and third subcells over the third subcell via MOCVD.

Epitaxial Growth Using Atmospheric Plasma Preparation Steps

After CMP and before an epitaxial growth step, the substrate is prepared by an atmospheric plasma which includes not only a reducing chemistry, but also metastable states of a chemically inert carrier gas. This removes residues, oxides, and/or contaminants. Optionally, nitrogen passivation is also performed under atmospheric conditions, to passivate the substrate surface for later epitaxial growth. 1. A process for epitaxial growth of a crystalline thin film on a crystalline substrate , comprising the steps of:a) forming an atomically ordered crystalline surface on the crystalline substrate;b) flowing an activated gas mixture, which contains activated metastable states of a noble gas as well as one or more unstable reactive chemical species, through a glow discharge and downstream onto the surface of the crystalline substrate under atmospheric pressure, to thereby remove residues and/or oxidation from the ordered crystalline surface without disturbing the atomic order of the crystalline surface;c) enclosing the crystalline substrate in a reaction vessel which is not open to the atmosphere, and depositing a layer of a crystalline material onto the ordered crystalline surface, as a crystalline extension of the substrate crystallinity.2. The method of claim 1 , further comprising performing said forming step by CMP.3. The method of claim 1 , further comprising performing said flowing step at approximately room temperature.4. The method of claim 1 , further comprising passivating the ordered crystalline surface between said flowing step and said enclosing step.5. A system which automatically performs step b) of .6. A process for epitaxial growth of a crystalline thin film on a crystalline substrate claim 1 , comprising the steps of:a) forming an atomically ordered crystalline surface on the crystalline substrate;b) flowing an activated gas mixture, which contains activated metastable states of a noble gas as well as one or more unstable reducing chemical species, ...

METHOD FOR PRODUCING A VANADIUM-DOPED SILICON CARBIDE VOLUME MONOCRYSTAL, AND VANADIUM-DOPED SILICON CARBIDE SUBSTRATE

A silicon-carbide volume monocrystal is produced with a specific electrical resistance of at least 10Ωcm. An SiC growth gas phase is generated in a crystal growing area of a crucible. The SiC volume monocrystal grows by deposition from the SiC growth gas phase. The growth material is transported from a supply area inside the growth crucible to a growth boundary surface of the growing monocrystal. Vanadium is added to the crystal growing area as a doping agent. A temperature at the growth boundary surface is set to at least 2250° C. and the SiC volume monocrystal grows doped with a vanadium doping agent concentration of more than 5·10cm. The transport of material from the SiC supply area to the growth boundary surface is additionally influenced. The growing temperature at the growth boundary surface and the material transport to the growth boundary surface are influenced largely independently of one another. 1. A method for the production of at least one SiC volume monocrystal with a specific electrical resistance of at least 10Ωcm , the method comprising:a) producing an SiC growth gas phase in at least one crystal growing area of a growth crucible and growing the SiC volume monocrystal by deposition from the SiC growth gas phase;b) supplying the SiC growth gas phase from an SiC source material that is located in an SiC supply area inside the growth crucible, wherein material is transported from the SiC supply area to a growth boundary surface of the growing SiC volume monocrystal;c) supplying vanadium as a doping agent of the growing SiC volume monocrystal to the crystal growing area;{'sup': 17', '−3, 'd) setting a growing temperature of at least 2250° C. at the growth boundary surface of the growing SiC volume monocrystal, to grow the SiC volume monocrystal doped with a vanadium doping agent concentration of more than 5·10cm; and'}{'b': 18', '25', '28', '31', '41, 'e) setting the transport of material from the SiC supply area to the growth boundary surface in ...