SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY

01-07-2015 дата публикации
Номер:
KR1020150073588A
Принадлежит:
Контакты:
Номер заявки: 01-13-102061467
Дата заявки: 23-12-2013

[1]

The technique a semiconductor light emitting device array, in particular semiconductor light emitting diode array relates to (semiconductor light emitting diode array).

[2]

Light emitting diode (Light Emitting Diode)-operates with an electric energy by direct light energy constitution: on a substrate, in particular blue LED and yellow phosphor through a combination of a white LED, existing incandescent, fluorescent lamp light source is high in comparison with the thermal conversion efficiency or freshness-retaining agent, antibacterial.: next-generation.

[3]

While, contrast input current efficiency for light emitting diode device is determined by the water properties of the photonic conversion, to each seed key excellent photoelectric efficiency and exhibiting the gallium nitride (GaN) based single crystal element is.

[4]

However, generally GaN single crystal device using the light emitting diodes include a polarization device according to the present in quantum well structure for quantum confinement of stark effect (QCSE, Quantum Confined Stark Effect) by layer is prevented from releasing with symmetrical force which, in addition, absence of substrate units suck up circulating air from the single crystal element based GaN an ordinary heterogeneous substrate deficiency determined since a torque is generated, this threading dislocation understanding (threading dislocation) a non-light emitting coupled is prevented from releasing with symmetrical force layer phenomenon.. Purified from 118a poles and nothing polarization technology and exclusively on the basis of for using characteristics, uibrating characteristics analyzing method using high efficiency by beam pyramid-type hexagonal to provide a light-emitting element technology has been developed.

[5]

On the other hand, existing of white light emitting surface a combination of at least one light emitting diode is yellow phosphor video signal line, a faecal the quality of for light includes at least two kinds (CRI, Color Rendering Index). repetition of is. Therefore, (CRI) includes at least two kinds of white light emitting diode generally in order to increase the various phosphor which uses a combination which via, the photoelectric efficiency and process have the disadvantage that highly adverse side. In this regard, by uibrating characteristics analyzing in patent document 1 by forming a plurality of protrusions techniques for implementing multicolor light emission is formed integrally with the screw and for disclosure, multi-color luminescent applying a vibration to the one parameter came with the presence of limit terminals of the plurality of capacitors.

[6]

Korean Public Patent Notification number 10-2005-0129790 call

[7]

One aspect of the present invention, as well as contains a photoelectric efficiency, without separately using the phosphor a semiconductor light emitting face the first substrate by a rope. device array comprising the edge-emitting.

[8]

Said to achieve is used as a signal mark, one aspect of the present invention, number 1 conductivity type base semiconductor layer; said base semiconductor layers, plurality of a mask having an aperture layer; and a exposed through the aperture each said base semiconductor layer number 1 conductivity type is formed, at least 2 species crystalline scene (facet) if structure and having conductivity type number 1, said number 1 to the surface of the structure if conductivity type and formed in the active layer in the projection including conductive type semiconductor layer are number 2 ; includes, said plurality of openings strip, won, elliptic, triangle or more of polygonal, ring at least 2 to at least one shape provides epitaxial wafer characterized by.

[9]

Addition, for of solving means is said, all with the characteristic of the present invention listed the not. According to various characteristics and advantages of the present invention and effects of the specific embodiment to form more specifically by referring to 2000 can be understood.

[10]

According to the present invention, if having if nothing polarization and/or coil; a plurality of pole planes 118a for the production of a structure by, semiconductor of the light-emitting device array. photoelectric efficiency.

[11]

Furthermore, each semiconductor light-emitting device having light source emits light of different since, without separately using the phosphor a high (CRI) includes at least two kinds can be face the first substrate.

[12]

Figure 1 shows a, according to some exemplary embodiments of the present invention also a semiconductor light emitting element array is cross-sectional shown is roughly. polar 118a and if nothing polarization Figure 2 having one example of structure if concerns a.. Also Figure 3 shows a polymer light emitting device of the present invention invention e.g. of 1 to 3 according to SEM Image is semi. Figure 4 of the present invention invention e.g. spectral power according to spectroscopic analysis CL of 1.. Each crystalline of a scene, the depth buffer 1 Figure 5 of the present invention invention e.g. CL. spectral power according to spectroscopic analysis.

[13]

Hereinafter, reference to drawing with an a described S406 the present invention. Drawing the same references which refers to the same components, thickness of each component described is volatile for intelligibility of may be proposed. Hereinafter "on" or "on" in the term mechanical layer is directly on as well as when a relative position of the, intermediate elements are disposed therebetween may include a a.

[14]

Figure 1 shows a, according to some exemplary embodiments of the present invention also a semiconductor light emitting element array is cross-sectional shown is roughly.

[15]

Also with a 1, the bottom surface of the present invention semiconductor of the light-emitting device array number 1 conductivity type base semiconductor layer (10) is formed. Said number 1 conductivity type base semiconductor layer (10) the number 1-type impurity, e.g. n-type impurity doped semiconductor can be.. Number 1 conductivity type base semiconductor layer (10) the III-V group nitride semiconductor material may be formed from, for example, can be n-GaN. Said n-type impurity Si include can be is used.

[16]

On the other hand, also a low cost not shown the 1, said number 1 according to an exemplary embodiment of the present invention conductive base semiconductor layer (10) may be formed on a substrate, sapphire substrate, nitride semiconductor substrate, silicon (Si) substrates, and the like, use can be made of,. When the substrate is sapphire substrate, said surface of the sapphire substrate at said number 1 conductivity type base semiconductor layer C surface, R one of crystalline scene can be is formed on, when the nitride semiconductor substrate substrate is said, said number 1 conductivity type base semiconductor layer C surface of said nitride semiconductor substrate, M surface, R surface and A one of crystalline scene can be is formed on, the silicon (Si) substrate when the substrate, said base semiconductor layer said number 1 conductivity type silicon (Si) substrate (111) surface and (100) one of crystalline scene can be is formed on. Scene especially crystalline of substrate such as and said number 1 on the potential of the output terminal by base semiconductor conductivity type, if structure of a can change the aspect. Furthermore, crystal plane pole 118a/ nothing polarization ratio for forming adjuster controls the.

[17]

Said number 1 conductivity type base semiconductor layer (10) having multiple apertural areas (W) on the mask layer (11) is formed.

[18]

According to an exemplary embodiment of the present invention, said mask layer (11) the SiO2, SiOx, SiN, SiNx, Al2 O3 GaO and molds do not soften at elevated temperatures such as at least one insulator may include a 1.

[19]

Said plurality of openings (W) a strip, won, elliptic, triangle or more of polygonal, ring at least 2 can take the shape of at least one. Opening (W) according to the type of scene crystalline structure if (facet) is differently revealed which has, growth each decision as the after alcoholic beverage it will do different WIPO since the light source emits light of, by combining the without the phosphor is used for separate high includes at least two kinds (CRI) is enables the implementation of " white light.

[20]

If, number 1 conductive base semiconductor layer direction <0001>Is, when the strip shape opening said, opening direction <1-100>, <11-20>and <21-30>Having the second, is m micro 1-5 width, can be m micro 3-50 length.

[21]

Furthermore, when said opening shape caused, which may be m micro 1-10 diameter opening, said opening when the ring shape, 5 micro m in inscribed circular diameter of the primary drying chamber, at least, can be m micro 1-10 width.

[22]

Said mask layer (11) opening (W) number 1 a are exposed through a base conductive layer (10) if conductivity type number 1 on the structure (12) is selectively grown is. Conductive base semiconductor layer as well as said number 1, number 1 also structure if said number 1 conductivity type by growing in-situ doped semiconductor as, e.g. n-type impurity doped semiconductor can be. Number 1 group III-V conductive base semiconductor layer may be formed from nitride semiconductor material, for example, can be n-GaN. Said n-type impurity Si include can be is used.

[23]

If said number 1 conductivity type structure (12) at least 2 has (facet) scene crystalline species, also refers to surface 2, if said number 1 conductivity type polar 118a and/or if nothing polarization structure may include. In this case growth direction when, based on the nitrogen (N) and a gallium (Ga) (facet) the same within crystalline scene number required for growth the course internal field is the LCD panel displays orystal. this does not. Therefore, conventional c plane gallium nitride piezoelectric polarization of energy and a cutting unit distortion, active layer and a problem is improved second material efficiency is enabled.

[24]

In this regard, according to an exemplary embodiment of the present invention, if said number 1 conductivity type structure (12) has polarization than the mold layer C surface, A surface and if nothing polarization is M surface, 118a it is a polar {1-10n} surface including a {1-101}, {11-22} {21-33} {11-2n} surface and including a including a surface among the crystalline or more 2 {21-3n} may include a scene.

[25]

Said growth conditions structure if such as form opening and is adjusted as necessary the preliminary silicon oxide layer to form, said growth conditions reactor temperature, pressure, V/III ratio, precursor, as to the aromatic hydrocarbon ammonia flow.

[26]

If said number 1 conductivity type structure (12) the surface of active layer (14) and number 2 conductive-type semiconductor layer (16) is sequentially formed. Said number 1 base semiconductor layer (10) is formed at one side of the on, if conductivity type number 1 structure (12), active layer (14) and number 2 conductive-type semiconductor layer (16) projections (20) and form a.

[27]

Said active layer (14) in which recombination of electron-hole the light-emitting diodes for emitting light by by a layer, of the present invention according to an exemplary embodiment, said quantization with well layer quantization a pair of active layer consisting of the second conductive, at least at least one multiple quantum well layer may be proposed stacked on one (multi quantum well layer). Each multiple quantum well layer , for example, quantization InGaN/GaN plane compressive strain by quantization with well layer , InGaN/InGaN, InGaN/InAlGaN or InGaN/AlGaN pair of. which can be.

[28]

On the other hand, if said number 1 conductivity type each (facet) scene crystalline individual structure (In) indium said composition and well layer has a thickness of a semiconductor layer is formed on differently, each crystalline scene (facet) processings for different of different wavelengths it seals whereby they, thereby a high white light includes at least two kinds (CRI) is enables the implementation of ".

[29]

Said number 2 conductive-type semiconductor layer (16) the number 2-type impurity, e.g. p. can be doped semiconductor-type impurity. Number 2-conductivity-type semiconductor layer group III-V may be formed from nitride semiconductor material, for example, can be p-GaN. Include-type impurity mg said p, Ca, Zn, Cd, Hg can be is used.

[30]

On the other hand, of the present invention according to an exemplary embodiment, mask layer of a partial area which is exposed due to a first, second and third contact windows number 1 number 1 to one region of the light emitting cells base semiconductor conductivity type electrode (32) is connected is, number 2 conductive-type semiconductor layer on transparent conductive thin film (30) is formed, said transparent conductive thin film partial area on the number 2 electrode (34) are connected to. Such electrode array structure in a pixel area is changed to an enlarging mode can be change in the form, also said 1 limited by or limited not.

[31]

Hereinafter, embodiment a described S406 to the present invention. Just, the present invention embodiment relate to S406 CDK exemplary account for, of, or limit the scope not rights of the present invention.

[32]

(In the embodiment 1)

[33]

Surface of the sapphire substrate at C surface has a non organic chemical vapor deposition (MOCVD, Metal-Organic chemical vapor deposition) pattern by using an electrochemical plating conductive base semiconductor layer number 1 are formed at the n type GaN layer. In said n type GaN layer forming conditions, temperature 1100 °C, pressure unit 400mbar put therebetween, for n-type doping and SiH4 the first voice portion out of an gas.

[34]

Ear, on said n type GaN layer, PECVD (Plasma-Enhanced Chemical Vapor Deposition) pattern by using an electrochemical plating SiO2 50 nm is deposited on the mask layer, wet etch using BOE (Buffered Oxide Etchant) the front/rear sides of the opening. While, each in the embodiment each opening into its original emit rays with different colors, the 1 invention e.g. <1-100>Direction, width 3 micro m, length of strip shape in m micro 20 has been formed with an opening, a second, the 2 invention e.g. <11-20>Direction, width 3 micro m, length of strip shape in m micro 20 to synchronize the formed with an opening, a second, 3 diameter 3 e.g. invention won-shaped formed with an opening, a second the micro m in.

[35]

Ear, on opening said, metal organic chemical vapor deposition (MOCVD) pattern by using an electrochemical plating number 1 conductivity type is selectively grown if structure was 10 minutes. Conditions growth of structure if said number 1 conductivity type, temperature 1100 °C, 50mbar pressure, the ratio V/III 100, lateral growth speed constant 0.2 micro m/min put therebetween, for n-type doping and SiH4 the first voice portion out of an gas.

[36]

Ear, if conductivity type to the front surface of the substrate structure said number 1, number 2-conductivity-type semiconductor layer an active layer and has been, GaInN quantum well and said active layer consists of main 5 GaN quantum barrier multiple with quantum well structure form a substantial. 723 °C temperature growth of quantum well, 753 °C temperature growth of quantum barrier unit to the rear side of the main.

[37]

Thus produced showed to 3 having a a semiconductor light emitting element. Also 3 (a) 1 the invention e.g. for semiconductor emitting device produced by SEM Image is, also 3 (b) 2 the invention e.g. for semiconductor emitting device produced by SEM Image and, also 3 (c) 3 the invention e.g. for semiconductor emitting device produced by SEM Image is.

[38]

In the case of 1 e.g. invention, C surface, {1-101}, {11-22} crystal plane of been is formed, in the case of invention e.g. C surface and 2 and 3 to form a crystal plane of {1-101}. While, in the case of invention e.g. 2 and 3, the conveyer, shortening the such as but formed, face of the base material to be and shape of the structure haivng different colter area ratios been formed.

[39]

Reference 3 also provided, even to which an otherwise identical conditions, in accordance with opening having different no crystalline scene possible to obtain a semiconductor light-emitting device can be viewed.

[40]

(In the embodiment 2)

[41]

Said invention 1 e.g. by a semiconductor light emitting element to electrode, cathodoluminescence said invention said invention e.g. device (Cathodoluminescence) by 1 per se and each crystalline scene (facet) 1 e.g. CL to the spectrometric analysis.

[42]

Figure 4 invention e.g. spectral power according to spectroscopic analysis CL of 1.. Also reference to 5, two of semiconductor light emitting elements 1 e.g. invention (444 nm and 555 nm) as well as indicate a peak wavelength of, 444 nm peak wavelength of refractive nitrides with conventional (half-width) formed on the c appears can be of confirming the.

[43]

The invention of Figure 5 (a) 1 e.g. CL each crystalline of a scene, the depth buffer is spectral power according to spectroscopic analysis, of Figure 5 (b) has a crystalline scene 3 of according to spectroscopic analysis CL shown corresponding to spectrum and, 444 nm and 470 nm of Figure 5 (c) and (d) each of the Image is. Also 5 provided refers to, one protrusion according to scene crystalline each even wavelength. the support bar, and a penetration different.

[44]

10: number 1 conductivity type base semiconductor layer 11: mask layer If structure 12: number 1 conductivity type 14: active layer 16: number 2 conductive-type semiconductor layer 20: projection 30: transparent conductive thin film Electrode 32: number 1 34: number 2 electrode W: opening



[1]

Disclosed is a semiconductor light emitting device array. The semiconductor light emitting device array according to one aspect of the present invention includes a first conductive type base semiconductor layer, a mask layer which is formed on the base semiconductor layer and has a plurality of opening parts, and a protrusion part which is formed on the first conductive type base semiconductor layer exposed through each opening part and includes a first conductive type polyhedral structure which includes at least two kinds of crystal growth facets, and an active layer and a second conductive semiconductor layer which are formed on the surface of the first conductive type polyhedral structure. The opening parts have at least two shapes of a strip, a circle, an ellipse, a polygon of a triangle or more, and a ring.

[2]

COPYRIGHT KIPO 2015

[3]



Number 1 conductivity type base semiconductor layer; said base semiconductor layers, plurality of a mask having an aperture layer; and a exposed through the aperture each said base semiconductor layer number 1 conductivity type is formed, at least 2 species crystalline scene (facet) if structure and having conductivity type number 1, said number 1 to the surface of the structure if conductivity type and formed in the active layer in the projection including conductive type semiconductor layer are number 2 ; includes, said plurality of openings strip, won, elliptic, triangle or more of polygonal, ring at least 2 to shape at least one characterized by epitaxial wafer.

According to Claim 1, said mask layer SiO2, SiOx, SiN, SiNx, Al2 O3 and GaO from the group comprising at least one 1 including epitaxial wafer.

According to Claim 1, the direction of the opening strip shape said <1-100>, <11-20>and <21-30>Having the second, is m micro 1-5 width, length m micro 3-50 in epitaxial wafer.

According to Claim 1, diameter of the opening shape said won 1-10 micro m in epitaxial wafer.

According to Claim 1, said ring-shaped tube molding unit in inscribed circular diameter of the primary drying chamber, at least m micro 5, micro 1-10 width m in epitaxial wafer.

According to Claim 1, said number 1 surface C structure if conductivity type, A surface, M surface, including a surface {1-101} {1-10n}, {11-22} {11-2n} surface and including a including a surface among the {21-33} {21-3n} 2 or more determined to including scene-characterized by epitaxial wafer.

According to Claim 1, said semiconductor light-emitting device comprises a sapphire substrate further includes, said surface of the sapphire substrate at said number 1 conductivity type base semiconductor layer C surface, R one of crystalline scene being formed on the characterized by epitaxial wafer.

According to Claim 1, nitride semiconductor substrate, a semiconductor light-emitting device comprises said further includes, said number 1 conductivity type base semiconductor layer C surface of said nitride semiconductor substrate, M surface, A crystallinity of one of R surface and being formed on the scene characterized by epitaxial wafer.

According to Claim 1, said semiconductor light-emitting device comprises a silicon (Si) substrate further includes, said base semiconductor layer said number 1 conductivity type silicon (Si) substrate (111) surface and (100) one of crystalline scene being formed on the characterized by epitaxial wafer.

According to Claim 1, said base semiconductor layer to contact the electrode number 1 a including epitaxial wafer.

According to Claim 1, connected conductive semiconductor layer said number 2 number 2 electrode including epitaxial wafer.