METAL OXIDE SLURRY FOR CMP AND MANUFACTURING METHOD THEREOF

Hereinafter reference to drawing with an. as further described are of the present invention in the embodiment. Describes in the present invention, associated with the configured function or publicly known a description is the present subject matter of invention for preventing needless blur when a mobile station is determined to wall of the rectangular rotating the will omit. Furthermore, the present specification the terms used in a preferred embodiment of the present invention properly thereby, the cold air flows (terminology) is used to express as terms, user, or's intended operating practices of the present invention is can be changed according to. Therefore, present the present definitions for terms throughout the specification based on recorded contents of. to be lowered. Each drawing to be presented to the same references exhibits and the same member.

In an entire specification, certain on any configuration element when advisable to "includes", is especially opposite the substrate to which it is-free other features element is supported by the upper case and, excepting the other further include components to. meaning that it may be set.

Hereinafter, manufacturing method thereof of the present invention CMP slurry and control apparatus for drawing and in the embodiment to reference to outputs a relay driving signal. specifically,. However, in the embodiment the present invention folded in such a manner that the drawing and not limited to.

Aspect of the present invention number 1, metal oxide polishing particle; dispersion number; pH modulators; and water; control apparatus for provides for including CMP slurry.

Control apparatus for a metal oxide abrasive particles of the present invention CMP slurry surge during metal oxide polishing particle as macrospheres number of slurry solids content metal oxide polishing particle according to size of slurry is a lever is combined to a body. Control apparatus for said slurry of the present invention CMP slurry solids content decreasing macrocyclic is reduces the number of metal oxide abrasive particles, said slurry solids content reduction of width, a reduced number of metal oxide polishing particle macrocyclic according to the case of a small grain size compensated by the particle size by said reduced-width-increased to 100,000. properties. In particular on the first solids content according to macrocyclic abruptly increases in width, a reduced number of abrasive particles to 100,000. aspects. I.e., solid content when the transient current decreases 1/2, a reduced number of abrasive particles macrocyclic at least 1/2 width. In addition such compensated by the particle diameter of a large-scale tendency high noticeable, particle diameter of the opposite when the amount of light concentrated on relatively change number of-expanding the particles with less.

2.0 wt % based on solids content, particle diameter of 1.99 micro m or more number particles when the accumulation metal oxide polishing particle said 2.0E*10³ in the approximate range of open/ml hereinafter, particle diameter of 1.00 micro m or more number particles when the accumulation metal oxide polishing particle said 3.0E*10⁵ in the approximate range of open/ml hereinafter, particle diameter of 0.70 micro m or more number particles when the accumulation metal oxide polishing particle said 3.0E*10⁸ open/ml hereinafter can be within a range from.

Through centrifugal separation processes is digested in the present invention as well as scratch and by remove microparticles decreases the deficiency.

Said metal oxide the abrasive particles, silica, ceria, zirconia, alumina, titania, barium titania, germania, magnesia and lawsonia manganate selected from the group consisting of including a least one. may be.

The abrasive particles metal oxide said 0.1 to 10 weight % said slurry can be is. Said metal oxide abrasive particles have polishing rates when less than 0.1% weight is lowered, when the greater than 10 weight %, to the superabrasive particle is generation deficiency by.

Dispersants said said metal oxide abrasive particles coated on a metal oxide polishing in a sterilant fluid dispersion for improving dispersion of particles and serves to direct. Said dispersants ammonium salt, amine salt and alcohol salt selected from the group consisting of including least one. may be.

Said dispersants 0.1 to 10 weight % said slurry can be is. Said a dispersing agent less than 0.1 weight % when slurry side effect adsorption polishing surface is used for performing the filtering process polishing rate small, when higher than 10 weight % dispersion of excess dispersion stability due to input number when aggregation is performed by reduced micro thereby occurs and the deficiency is which has the same number as the and scratch.

Said pH the pH of slurry said tuning agent generation of abrasive particles serves to control various parameters such as.. Acid or base to the web without restriction said pH tuning agent may be used in, for example, ammonia, AMP (ammonium methyl propanol), TMAH (tetra methyl ammonium hydroxide), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, metal, such as sodium bicarbonate, sodium carbonate, triethanolamin, tromethamine in, age it knows the id , nitric, sulfate, phosphoric acid, hydrochloric acid, acetic acid, citric acid, glutaric, writing base call it buys , formic acid, lactic acid, malic, malonic acid, maleic acid, oxalic acid, phthalic, succinic acid and tartaric acid selected from the group consisting of including least one. may be.

Metal oxide polishing particle content of said pH modulators, dispersion number, other of different composition as within such a range that causes no can inhibit the, said slurry can be 0.01 to 1 weight %. Less than 0.01 weight % said pH adjusting agent electrical energization of abrasive particles when the repelling force are independent away as in storage stability by reduced by aggregation after polishing occur in the stream is digested, deficiency such as fine scratch and capable of generating, said pH adjusting agent STI converter converts a current % weight 1 in chemical mechanical polishing process for process, or the like, surface of a wafer is nitride is charged is negative the polishing rate is decrease in. so there is a threat that the.

For chemical mechanical polishing the present invention according to said CMP slurry of control apparatus for the additive and water as the include, preferably, use can be made of, pure water of ultra-pure water.

Aspect of the present invention number 2, metal oxide polishing particle, dispersion number, pH modulators and water mixing step preparation of a solution of mixing; mixing said metal oxide polishing particle in solution for comminuting a milling process; said grinding metal oxide abrasive particles is digested during process a centrifugal separator for removal; and said metal oxide polishing a centrifuged filtering the solution and mixing-particles are dispersed a filtration process; for including CMP provides control apparatus for manufacturing method of slurry.

Also one of the present invention: an embodiment Figure 1 shows a control apparatus for manufacturing method of CMP slurry indicative of order.

First, metal oxide polishing particle, dispersion number, pH modulators and water preparation of a solution of mixing performs mixing step (110).

Said metal oxide the abrasive particles, silica, ceria, zirconia, alumina, titania, barium titania, germania, magnesia and lawsonia manganate selected from the group consisting of including a least one. may be.

Said dispersants ammonium salt, amine salt and alcohol salt selected from the group consisting of including least one. may be.

Said pH tuning agent, ammonia, AMP (ammonium methyl propanol), TMAH (tetra methyl ammonium hydroxide), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, metal, such as sodium bicarbonate, sodium carbonate, triethanolamin, tromethamine in, age it knows the id , nitric, sulfate, phosphoric acid, hydrochloric acid, acetic acid, citric acid, glutaric, writing base call it buys , formic acid, lactic acid, malic, malonic acid, maleic acid, oxalic acid, phthalic, succinic acid and tartaric acid selected from the group consisting of including least one. may be.

Said sensor adheres to the battery to confirm, preferably, use can be made of, pure water of ultra-pure water.

Furthermore, mixing said metal oxide polishing particle in solution for comminuting performs a milling process (120).

A assembly process milling said relatively weakly (agglomerate) state of phenolic resins of the kind metal oxide layer comprising a desired identifier issue and harmonize common investment with 2 and ground into particle diameter metal oxide abrasive particles have dispersed in this phase to process a uniformly distributed, particle size, uniformity and dispersion stability to the titanium dioxide particle for controlling an amount of is processing a key. Said ultrasonic process or milling (bead) bead vehicles and the vehicle carried out milling (ultrasonic) may also be used but, jet (jet) is preferably carried out in a vehicles and the vehicle can be. A polishing particle dispersion in a sterilant fluid jet vehicles and the vehicle opposite of abrasive particles breaking titanium nitride layer is as a way, slurry which is reduced in the source of contamination, injected in a depressed groove formed on one end of the table amount of impact is homogeneous in the g-expanding the particles with size, which has excellent productivity and in that unit is off.

Said grinding process (Nanomizer) low microresonator nano, micro [...] (Microfluidizer), (Ultimizer) variety of jet mill grinding the mote E which will freeze the writing controller can be.

Said milling process, said pressure is collision opposite of the mixed solution of 500 to 3,000 kgf/cm² can be is. Or, 700 to 3000 kgf/cm², or, 1000 to 3000 kgf/cm² can be. Collision pressure is 500 kgf/cm² back port to suppress the biogas method and plant of living waste, 3000 kgf/cm² exceeds a grinding of particles which are size is too small and, . disadvantageous with respect to economical.

Beads are filling [...] which said milling equipment is installed, energy of bombardment by the impact by the bead, friction energy of, shear stress and particle and particles by collision be at 500 is continuously dispersion and grinding process.

Furthermore, said grinding metal oxide abrasive particles is digested during order to remove the coating in a centrifugal process performs (130).

Metal oxide polishing the various shape and size particles having an, vehicles and the vehicle even after chemical mechanical polishing of unevenness is and polishing flatness and then melted.. Won in core crisis can be a classifier. Said centrifugal process using an isolation mask, a vehicles and the vehicle ground into metal oxide abrasive particles in large particle, agglomerated particles, by means of the particles having high density, and an, abnormal larger at its normal removed to issue and harmonize common investment with identifier 1 grown particles only capable of classifying a powder in a process which, unevenness is and polishing flatness is process for manufacturing. Won core crisis suspension suspended in a dense solid components such as gravity, when externally-applied force from thrusting the, differ as to mass are thereof it does water by the principle of reverse, as size mass of solid component is a process classification. The centrifuging centrifuge can be is subjected to stripping for stripping. 5 minutes to 20 minutes using a photolithography process using an isolation centrifugal said rotation time. may be centrifugation. Furthermore, process using an isolation mask, a centrifugal said, rN²/894 = 10,000 to 150,000 (r= rotating body radius, N= rotation) of by centrifugal force centrifugation. may be. relative circle poles to each other (relative centrifugal force: RCF) the size of less than 10,000 small when excessive which capable of classifying a powder in a free of abrasive particles is provided a vortex size is reduced while the and against, for the suppression of costly yield when higher than 150,000 and outputs signals corresponding to a predetermined.

Said centrifugal separator before metal oxide polishing particle of 2 difference having a particle size of 1 to 80 to 330 nm and, centrifugal after isolation of the metal oxide abrasive particles of 2 difference having a particle size of 1 to 50 to 280 nm can be is. Having a particle size of 1 to particular distribution mixture by the addition of an initiator exhibits and average particle size. After core crisis 2 difference won relatively reduced particle size of larger particles by centrifuging to produce a size for an average grain size distribution of due to is is reduced. Thus centrifugal segmentation of 2 increases, resulting in a lower limit particle size difference in a centrifugal high in a 50 80 after isolation of the large particle and flocculation processes particles size for an average grain size distribution of due to the recording operation. installed rotatably on the base panel.

Furthermore, a centrifuged said metal oxide polishing filtering the solution and mixing-particles are dispersed a filtration process performs (140).

Said said filter in the filtration processes a centrifuged is digested is a process for removing. The filtration processes said, membrane filter (membrane filter), (depth filter) in a depth filter, and selected from the group consisting of (pleated filter) filter [...] a least one using a filter including can be. The filtration processes said, 0.1 to 1.2 micro m of excited may. Still even after filtration processes including metal oxide abrasive particles is the mixed solution of slurry state.

Said filtration processes effectivity and strength alloy, a corrosion-resistant 1 or more times, when considered in the can be performing the complex division and the dual.

Aspect of the present invention number 3 of the sides of said of the present invention number 1 control apparatus for CMP substrate is abraded to polish the substrate with the slurry provides method for polishing a substrate by. Said substrate may including oxide film.

Control apparatus for slurry and the manufacturing method thereof of the present invention CMP, semiconductor CMP applied to particles and aggregation is digested in a greater proportion of the decrease in yield due to which are recognized one of factor is while simultaneously for reducing particles and residual a scratch and high grinding efficiency.. Furthermore, VLSI semiconductor process as requested by the real-time in various patterns easily fabricates a desired model and application for a polishing rate, polishing selectivity, indicative of an unevenness is plane non-uniformity (WIWNU), micro-scratch minimum of the mask pattern is exposed group. can be achieved.

Hereinafter, the present invention embodiment to further rapidly and to reduce a memory to one, of the following embodiment relate is described only for the purpose of, of, or limit the scope of the present invention. without intending to be.

[In the embodiment 1]

Purity ceria 10 weight %, polyacrylic acid ammonium salt 3 weight % and pure water of ultra-pure water in a mixer 30 minute or more when blended with an, mixed 10 weight % slurry of the primary particles in the particle diameter of 300 nm is 2 a first planarizing process is. breakup. Furthermore, centrifugal separator 10,000 centrifugal force using centrifuge process which, was 5LPM being capable of classifying a powder in the flow rate. Furthermore, 0.1 micro m manufactured by blowing air bubble of excited solids the optical 5 weight % of ceria slurry class 300 nm have been prepared.

[In the embodiment 2]

Won in 15,000 core centrifuge centrifugal force is the same in the embodiment 1 except that the method in the embodiment.

[In the embodiment 3]

In 20,000 won core centrifuge centrifugal force is the same in the embodiment 1 except that the method in the embodiment.

[In the embodiment 4]

Won in 25,000 core centrifuge centrifugal force is the same in the embodiment 1 except that the method in the embodiment.

[In the embodiment 5]

Won in 30,000 core centrifuge centrifugal force is the same in the embodiment 1 except that the method in the embodiment.

[Compared e.g. 1]

Won core crisis process is performed on the particle size and 280 nm in size in the embodiment 1 except that the same method in the embodiment.

[Compared e.g. 2]

Won core crisis process is performed on the particle size and 260 nm in size in the embodiment 1 except that the same method in the embodiment.

Said using ceria slurry shaped structure thus produced, in particular a grinding condition polished substrate, LPC improved rate, was a longitude can and scratch reduction deficiency.

[Grinding condition]

In the embodiment 1 to in the embodiment 5, compared e.g. with the slurry, ceria 2 and 1 a grinding condition was polishing a.

1. Grinder: UNIPLA 231 (Doosan Mechatech [...])

2. Pad: IC-1000 (Rohm & Hass [...])

3. Polishing time: 60 s (blanket wafer (blanket wafer)), 30 s (pattern wafer)

4. Platen RPM (Platen RPM): 24

5. Head RPM (Head RPM): 90

6. Flow (Flow rate): 200 ml/min

7. Wafer used:

-8 inch SiO₂ (PE-TEOS) blanket wafer

-8 inch wafer pattern STI 5000 Å (HDP) portion

8. Pressure: 4.0 psi

In the embodiment 1 to 5 the 1 table a, compared e.g. 1 and 2 2 300 nm of ceria slurry of class size particle size difference, LPC improved rate, deficiency reduction and scratch is metric that is representative of the number of graph. Wherein LPC improved (Large particle Count) measuring equipment as the large particle can Accusizer FX780 equipment point, viscosity index, oxidation stability, slurry for aesthetic separation circle new revealed a numerical compared.

Macrocyclic use chip selection signal is enabled in a controlled number abrasive particles in the embodiment 5 to in the embodiment 1 of a ceria slurry class 300 nm LPC deficiency and improved a rate that is excellent can be viewed. Furthermore, very little may scratch showed good performance.

[In the embodiment 6]

Won in 80,000 core centrifuge centrifugal force is the same in the embodiment 1 except that the method in embodiment and, ceria slurry class 115 nm have been prepared.

[In the embodiment 7]

In 100,000 won core centrifuge centrifugal force is the same in the embodiment 6 except that the method in the embodiment.

[In the embodiment 8]

Won in 120,000 core centrifuge centrifugal force is the same in the embodiment 6 except that the method in the embodiment.

[In the embodiment 9]

Won in 150,000 core centrifuge centrifugal force is the same in the embodiment 6 except that the method in the embodiment.

[Compared e.g. 3]

Won core crisis process is performed on the particle size and 107 nm in size in the embodiment 6 except that the same method in the embodiment.

[Compared e.g. 4]

Won core crisis process is performed on the particle size and size in the embodiment 6 except that the 90 nm in the same method in the embodiment.

In the embodiment 6 to in the embodiment 9, compared e.g. 3 and 4, ceria by using a polishing the of grinding condition was equal to.

In the embodiment 6 to 9 the 2 table a, compared e.g. 2 of 3 and 4 of ceria slurry class 100 nm size particle size difference, LPC improved rate, deficiency reduction and scratch is metric that is representative of the number of graph.

Macrocyclic use chip selection signal is enabled in a controlled number abrasive particles of ceria slurry class 100 nm in the embodiment 9 to in the embodiment 6 also ceria slurry class 300 nm LPC deficiency and improved as well as a rate that is excellent can be viewed. Furthermore, less may scratch can be viewed.

Defined although the present invention refers to the resulting structured materials, examples of the embodiment is described by drawing but, embodiment of the present invention refers to said are not limited aspect, the present invention is typically encountered in having knowledge of various from said substrate grow. and deformation that a modified. Therefore, the described range limited aspect of the present invention embodiment is not an the previously set mode, refers to claim, as well as apply these claim by equivalent should through the current source circuit is determined.