METHOD FOR HYDROGENATING SILANE COMPOUND

Hereinafter, embodiment of the present invention to illustrate the time as large as that of the root control part. Just, is to presented as an exemplary, the present invention refers to the present invention do not is limited the after alcoholic beverage it will do claims. and the user makes a defined by category.

Of the present invention in one embodiment, hydrogen supplied to the device a low temperature plasma reactor, hydrogen ion, electronic, and hydrogen atom radical generating a low-temperature plasma in step including; said low temperature plasma reactor device including silane compound to step of supplying source material; and said a silane compound said hydrogen ion, electronic and said hydrogen with the atomic radicals hydrogenation being conducted in a hydrogenation reactor the method including silane compound provides corrosion resistance and corrosion resistance after coating.

A plasma neutral particles, ions and electrons as a plasma not balance of high temperature thermal each other, electronic approximately thousands to can or same the whole city on the temperature of, and almost no particles neutral or ion has a temperature levels of room temperature.

Reaction of plasma said device but number for a barrier, thousands, of the whole city can having a temperature higher by collisions of electrons that have dissociated and ionization (ionization) can be response against (dissociation).

Said low temperature plasma reactor is provided with a low-temperature plasma generator device, driven by electric power supply from the presence of such voltage plasma generate.

Said method comprising a low-temperature plasma generation of hydrogen on board a single to when used directly as the gas, hydrogen ion, hydrogen radical, neutral particles, including electronic or the like low temperature hydrogen plasma can be. In this case, gas comprising a low-temperature plasma generation hydrogen forms the plasma as, organosilane compound and a hydrogenation reaction is used as a starting material. He or Ar the use of an inert gas such as a high temperature plasma antenna in low noise, and, for generating plasma is used as single hydrogen hydrogen by detaching process separate between and inert gas achieved due to the omission continuous device and. circulation process.

Said generating a plasma at low temperatures, a hydrogen to said ion reaction and/or dissociated and causing a reaction, as a result hydrogen jig of rail-drilling machine for quantity of hydrogen ion, electronic, and hydrogen atom radical is generated..

Ion at which the produced hydrogen from said, electronic, and hydrogen atom radical, or the like, that has said vapor silane compound raw material by reacting, said is carried out is the hydrogenation of silane compound. I.e., raw material is hydrogenated said silane compound.

The event of the use of a high temperature plasma, plasma electromagnetic fields within the interrogation a single energy is a plurality of regions and/or distribution required for, such collisions of electrons that have energy distribution is different from the line width of different reaction according to is displayed not during the cross-sectional area, the desired ion, radical other than result in unwanted ion, radical and the like additionally generated. These desired heavy ion, radical such as. cause numerous reaches the lowered. Due to side reactions such as well as target product high-molecular-chain of various lengths (for example, silane poly [...] , perchlorinated polysilanes) is may be formed, this loss in of the reaction material lowers the of connected. To create high temperature plasma in the reaction process in addition supplied Ar or He inert gas such as a process for separating the target product in latter to a mold release process, or the like is additionally requires a layer is formed on the resonance inverter, is higher in is.

, By using a time hopping code, since low temperature said method using plasma hydrogen ion desired, electronic, and hydrogen atom radical the generation of high levels of the unwanted ion, minimizing the production of radical has the size sufficient, the lowered, as it is hereby possible to minimize, eventually silane compound, while minimizing the loss of raw material utilization; a process for efficiently producing the 2000 benefits advantageously applied.

Said method is generally removed by the amplifier and the a hydrogenation being conducted in a hydrogenation reactor obtained using a catalyst that efficiently using low temperature plasma hydrogenation being conducted in a hydrogenation reactor are connected to the switching circuit equipment anti-charging material, and carbonblack process. is provided the first light of the first light. Furthermore, said method is minimizing the side reactions.

Furthermore, the raw materials silane compound said alkoxysilane, chlorinated silane or magnesium fluoride, can be organosilane. Said silane compound used as the raw material carbon atoms alkoxy alkoxysilanes 1 to 5 may be alkoxy having..

In one embodiment, raw material introduced into a tetraalkoxysilane by said method the hydrogenating may yield an afterward.

In another embodiment, raw material silane tetrachloride by said method the divided into four zones three ammonium threads column hydrogenating material is obtained.

Said inorganic filler is silica, a trialkoxysilane or, monosilane growth process is performed by the thread column three ammoniums it will ask redistribution (redistribution) can convert, the silanes a mononucleotide that has inorganic filler is silica, is various commercial-derived can be used.

In particular, tree conversion to monosilane through redistribution reaction the cock which will know it will be sour, column a compound which is highly rate to the typical, said method the tetraalkoxysilane trialkoxysilane convert very important for the virtue of the traits are used to identify the the meanings.

the method also shown mimetic to 1 low temperature plasma reactor can be performed by device.

Low temperature plasma reactor of Figure 1 device (100) has a silane compound vaporizer (110), gas supply device (120a, 120b), low temperature plasma generator (130), low temperature plasma reactor (150), gas collector (160) and gas circulation device (170) consists of is connected.

Said silane compound vaporizer (110) has when a liquid state raw material is a silane compound, vapor plasma hydrogenation, the reaction can be carried out to weather conditions to silane compound to of charging a raw material, for quantifying of vaporizing a liquid silane compound as device, supply of hydrogen gas as the carry gas may comprise an device. Said supply device argon, helium, said off together with hydrogen a moisturizing inert gas such as low temperature plasma reactor can be immersed in device.

As such, in said method, when a liquid state raw material is silane compound, silane compound raw material vaporizer silane compound of vaporizing a quantitative in gaseous form may further include any step. Therefore, said method for evaporation of the liquid phase with a silane compound to be raw silane compound gas state is as the steps of providing a may further include any.

Said gas supply device (120a, 120b) a low temperature for gas and silane compound raw material gas each low temperature plasma generator (130) and a low temperature plasma reactor (150) at a substantially constant flow rate. to supply the. In Figure 1 gas supply device (120a) a low temperature hydrogen plasma generator (130) is supplied to the, gas supply device (120b) has hydrogen and silane compound low temperature plasma reactor (150) supplied to. Supplied from an input gas line, filter for anti-reflux silane compound and valve and silane compound for use as anti gas line of a thermal annealing process can be is provided device.

Said gas supply device (120a, 120b) comprising a low-temperature plasma generation supplied by a gas for hydrogen alone or hydrogen mixed gas including argon inert gas such as such as can be provided in the form. I.e., as a gas for comprising a low-temperature plasma generation, hydrogen is alone for RSSI measurement may be used, together with hydrogen argon inert gas such as may be is used together. Also be inserted into the raw material silane compound may be alone, or argon or hydrogen with inert gas such as. supply plants.

I.e., said silane compound raw material and hydrogen are each independently from or of mixed temperatures the low temperature plasma reactor can be on the device.

In said method, a low temperature plasma reactor said low temperature plasma generator device (130) and said low temperature plasma reactor (150) can be constructed to.

Said low temperature plasma reactor (150) the low temperature plasma generator (130) greater than may have reaction spaces, specifically, said low temperature plasma reactor (150) the low temperature plasma generator (130) in the space enclosed by about 30 times to about 50 times large can take the reaction space. As such, said low temperature plasma reactor (150) the low temperature plasma generator (130) by having reaction spaces greater than, electronic a plate of the separator layer and prevents decomposition gas is fully silane compound other ends of the resistors 11 be possible that the frequency of the, selectively including magnetic field filter device (140) via the incoming, including anion-monoatomic hydrogen ions and radicals and a lowered thereby accelerating hydrogenation reaction with minimum housing and the motor may be proposed.

Said low temperature plasma reactor can be low pressure conditions, while a device. For example, said low temperature plasma reactor about device 90 mTorr to about 30 mTorr pressure. and can be readily adjusted to.

Gas supply device (120b) plasma reactor at low temperature (150) which is connected by gas injection device (121) raw material is silane compound through the low temperature plasma generator (130) and plasma reactor (150) can be are divided into four zones.

In one embodiment, silane compound raw material and method for automatically adjusting focus device (121) the in Figure 3 may be embodied in such as a. Also refers to surface 3, an external gas line (122) or more signal selectors coupled to the cyclic structure turning gas hole of inwardly gas a silane compound (123) uniform via plasma reactor at low temperatures (150) able to supply to.

Silane compound raw material gas supply device (120b) through low temperature plasma reactor (150) supply, low temperature plasma reactor (150) positioned gas injection device (121) the position of low temperature plasma generator (130) so as to change the distance relative to the low temperature gas silane compound can be for adjusting the position plasma reactor.

Said low temperature plasma generator (130) of a plaque has low temperature with a gas for generating plasma low temperature plasma-generated a hydrogen ion, electronic, and hydrogen atom of generating radicals upon as a device, plasma source and power supply device (131) includes.

Low temperature plasma generator (130) the system for generating the plasma torch, microwave plasma, electron cyclotron resonance (ECR) plasma, system for liquid crystal filament, radio frequency (RF) plasma, audio video auto select can be at respective, is usable in both, not limited to.

Said device (100) comprising a low-temperature plasma generation, as required magnetic field generating device, impedance matching device, waveguide and at least one of the combinations thereof may further include any.

In Figure 1, for example, low temperature plasma generator (130) may be the audio video auto select, plasma of providing power to a RF antenna (132), power supply device (131) and an antenna and power supply device of the impedance matching RF matching device (133), helicon wave heating required for magnetic field generating device (134), and for the passage electric field RF RF window of quartz or the like material (135) consists of to. A audio video auto select RF heating in addition helicon wave density plasma by heating down.

Magnetic field generating device (134) the electromagnet and the permanent magnet both available, heat the power loss during power on forearm, and passes through the forearm includes a cooling device.

A low-temperature plasma generator of Figure 1 audio video auto select (130) to one exemplary of, the not limited range of the present invention.

Said low temperature plasma reactor (150) a low temperature plasma produced by hydrogen ion, electronic, and hydrogen atom radicals silane compound is a spatial reaction raw material gas and.

Low temperature plasma reactor (150) a low temperature plasma generator (130) sets a space larger than a plate of electrons so that productivity silane compound prevent described, hydrogen ion, electronic, and hydrogen atom radical thereby accelerating hydrogenation reaction with minimum the lowered.

Silane compound of the hydrogenation kinetics manner by means of a cold plasma on binding properties, hydrogen radical cation and. high reaction anion more hydrogen than the first inorganic protection. Low temperature plasma reactor (150) is a large space of hydrogen molecule of the upper surface (dissociative attachment) adherence-dissociative for increasing availability of negative ion production space by can be.

Said gas collector (160) of a silane compound has hydrogenation kinetics manner by means of a cold plasma target produced by device as drinking water, a tank to accommodate gas product, cooling tank (161) and a collection tank (162) may comprise an. Said target product gas, establishing an optical fiber at a side, for example, trialkoxysilane, three ammonium threads column. combination of the conductor.

Low temperature plasma reactor (150) a target generated from cooling tank gas product (161) by of gas cold containing encapsulated water liquid at surface collector, collection tank (162) are stored in. Cooling tank (161) the configuration of the target product gas determined by the temperature for liquefying a, liquefied nitrogen, including ice in acetone solution, or the like, that may be selected.

As such, when a target product gas said method, for liquefying a gas is further a gas collector collecting the be.

Said gas circulation device (170) a gas collector (160) passing a unreacted silane compound gas for reuse as the gas supply device (120a, 120b) and circulates at the device and filter pumped out with the device may comprise an. Gas circulation device (170) (recycle) reuse of silane compound unreacted through continuous process for performed on the, can be of height.

By means of a cold plasma and the method at which the produced hydrogen ion, electronic, and hydrogen atom radical charged particle each flux by a magnetic field a step of controlling may further include any.

I.e., by means of a cold plasma and at which the produced hydrogen ion, electronic, and hydrogen atom radical, such charged particles and charged particle interface in a shared ram and to prevent passage therethrough, charged particle of water passes only through the low speed, one of and serves to direct energy filter.

Figure 2 shows a of Figure 1 by means of a cold plasma and to low temperature plasma reactor device at which the produced hydrogen ion, electronic, and hydrogen atom radical charged particle flux controlled by magnetic field to perform the functions of for production of a magnetic field for filter device (140) is further included in device exhibits and plasma reactor at low temperatures.

Said magnetic field filter device (140) a low temperature plasma generator (130) and a low temperature plasma reactor (150) and may be positioned between the, magnetic field generating device as charged filler containing the hydrogen ion, electronic, and hydrogen atom radical flux can be means of individually adjusting.

I.e., the method, said magnetic field filter device (140) through the magnetic field using a hydrogen ion, electronic, and hydrogen atom radical flux control scaling to the size of the target side reactions and charged particle controlling capable of modulating can be perform the functions of.

As such, the method said magnetic field filter device (140) a stack to a minimum side reactions using process control devices that contact point is turned off.

Said magnetic field filter device (140) a grid (151) plasma reactor (150) and a separated from one another.

Figure 4 shows a of Figure 2 magnetic field filter device (140) on the internal paths are formed in the. represents mimetic field direction which is substantially.

In Figure 4, the direction of the magnetic field low temperature plasma reactor (150) is transversely to the, electromagnet or permanent magnet (141) both available.

Magnetic field filter device (140) the longitudinal to direction field gradient (▽ B) copolymer and a, hydrogen ion, electronic, and hydrogen atom radical such as charged particles without to allow passage therethrough of granules of charged interface in a shared ram, of water passes only through the low speed charged particle licensee notification, one of and serves to direct energy filter. Magnetic field filter device (140) for controlling the manner by means of a cold plasma of silane compound to hydrogenation kinetics low temperature plasma generator (130) at low temperature plasma reactor (150) a hydrogen ion, electronic, and hydrogen atom radical of can be and adjusting energy, hydrogen ion contrast hydrogen atom radical ratio can be of.

In other words by, magnetic field filter device (140) a low temperature plasma reactor (150) the vessel immediately above hydrogen ion produced by plasma, electronic, and hydrogen atom radical generation rate to change.

Magnetic field filter device (140) a magnetic field of ion hydrogen by the plasma intensity, electronic, and hydrogen atom radical amount of a plasma modulators as one of, the power supplied to plasma, reactor pressure, such as or in vivo for preventing or treating gas mixing ratio can be independently adjusted.

Low temperature plasma generator (130) larger than space plasma reactor at low temperatures is set (150) together with a magnetic field filter device (140) comprises an electronic temperature of gas is fully silane compound by lowering the brightness of the lamps of the separator layer and prevents decomposition and, magnetic field filter device (140) via the incoming hydrogen-monoatomic ion, electronic and radical lowered thereby accelerating hydrogenation reaction with minimum penetration hole while moving up and down.

Establishing an optical fiber at a side, by means of a cold plasma and of silane compound binding characteristics on the hydrogenation kinetics, hydrogen radical cation and. high reaction anion more hydrogen than the first inorganic protection. Therefore, low temperature plasma reactor (150) by forming wide space of, hydrogen molecule of the (dissociative attachment) adherence-dissociative in a reaction space with can be for increasing availability of negative ion production to.

Figure 5 shows a low temperature plasma reactor device according to said of Figure 2 also carried out in the method is for controlling the digital camera and the timing block diagram.

In the embodiment hereinafter in. supported by the specific of the present invention. Just, described hereinafter, exemplified by a in the embodiment specifically for the present invention are or account for which purpose: to avoid a, . is not but the present invention the component is no longer required is limited.

(In the embodiment)

In the embodiment 1

Also 1 and 2 shown in device plasma reactor at low temperatures using good hardness and transparency to (TEOS, tetraethoxysilane, Si (OC₂ H₅)₄) experiment is performed for all the plasma hydrogenation being conducted in a hydrogenation reactor. Using non thermal plasma hydrogen, wherein reaction rate and selectivity are target products are triethoxysilane (TES, triethoxysilane, SiH (OC₂ H₅)₃) power is fed, according to presence/absence of magnetic field filter device TES contrast ruthenium on silica carrier together performed for all the generating input volume of analysis.

Hydrogen gas for generating plasma, TEOS with a reactive gas mixed gases, mixed with an hydrogen gas to be removed over the entire surface using vacuum pump pressure the paradigm was developed and is adapted to hold a 110 mTorr. TEOS liquefied surface of the gas line in order to prevent the rice was filtered.

A device comprising a low-temperature plasma generation quartz tube type audio video auto select power of 13.56 MHz window 1000 W applied section.

Filter device the time of using a magnetic field, magnetic field in Figure 2 such as a device (140) filter device permanent magnets as exchanger forms to upper and lower, upper permanent magnetic field of the magnet about 400G, was about 200G lower permanent magnetic field of the magnet.

0.40 mmol/min a TEOS into a plasma to the n bit parallel data inputted supply by vaporizing the, 30 sccm hydrogen as carrier gas to supply of corresponding advertisement based on the shown list, plasma generating hydrogen for a at the rate of at a the flow rate 90 sccm.

5 after hydrogenation being conducted in a hydrogenation reactor plasma time, collection tank compound and alcohol-based gas chromatography Agilent GC 7890A the an analyte using a device.

Lower magnetic field filter device and when using both upper and lower magnetic field filter device, without using a device filter magnetic field than that for the step at which the selectivity of TES into its original of increasing to 97.4% 17.9% in, 82.1% 2.6% in the selectivity of polymer by the decomposer side reactions made significantly reduced. Through the experiments, invention to be a connecting structure of door stopper and the hydrogenation of silane compound obtained product target of the n bit parallel data inputted confirm that the user, also a stack to a minimum lowered by control.

1 table a plasma TEOS to've got the hydrogenation reaction.

In the embodiment 2

In the embodiment 1 silane tetrachloride otherwise identical conditions and (STC, Silicon tetrachloride, SiCl₄) experiment is performed for all the plasma hydrogenation being conducted in a hydrogenation reactor. Target products are three ammonium threads column (TCS, trichlorosilane, SiHCl₃) power is fed, according to presence/absence of device filter magnetic field generating input volume of TCS contrast ruthenium on silica carrier together performed for all the analysis.

0.50 mmol/min a STC into a plasma to the n bit parallel data inputted supply by vaporizing the, 30 sccm hydrogen as carrier gas to supply of corresponding advertisement based on the shown list, plasma generating hydrogen for a at the rate of at a the flow rate 90 sccm.

5 after hydrogenation being conducted in a hydrogenation reactor plasma time, collection tank compound and alcohol-based gas chromatography Agilent GC 7890A the an analyte using a device.

Lower magnetic field filter device and when using both upper and lower magnetic field filter device, without using a device filter magnetic field than that for the step at which the selectivity of TCS in into its original of increasing to 82.7% 97.3%, 2.7% 17.3% in the selectivity of polymer by the decomposer side reactions made significantly reduced. Through the experiments, invention to be a connecting structure of door stopper and the hydrogenation of silane compound obtained product target of the n bit parallel data inputted confirm that the user, also a stack to a minimum lowered by control.

2 table a STC to've got the plasma hydrogenation reaction.

At least one fatty acid of the present invention preferred embodiment of the present invention to rapidly and to reduce a memory but the range rights and then not limited to a defined in if using a variety of one skilled in the art of the present invention basic general outline form and improved modified. disc spin speed value within a range rights in addition of the present invention.